This 9.7-mW LNA features a 13.3-dB power gain at 5.5 GHz with a noise figure of 2.9 dB , while maintaining an input return loss of -14 dB .
Abstract—A fully integrated 5-GHz low-power ESD-protected low-noise amplifier (LNA), designed and fabricated in a 90-nm. RF CMOS technology, is presented.
2024/10/22 · A fully integrated 5-GHz low-power ESD-protected low-noise amplifier (LNA), designed and fabricated in a 90-nm RF CMOS technology, ...
In this paper, the design and verification of a 5 GHz CMOS LNA with ESD protection in a 90 nm RF CMOS technology is presented for the first time. This LNA is ...
A fully integrated 5 GHz low-power electrostatic discharge (ESD)-protected low-noise amplifier (LNA) in 90 nm CMOS is presented. This 9 mW LNA, with a 1.2 ...
A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS · D. LintenS. Thijs ; An integrated 5 GHz low-noise amplifier with 5.5 kV HBM ESD ...
Jeamsaksiri et al., A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS, IEEE Journal of Solid-State Circuits, vol.40, issue.7, pp ...
What is a low noise amplifier in RF system?
What is low noise RF amplifier stage?
A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS ... Low-power 5 GHz LNA and VCO in 90 nm RF CMOS. D Linten, L Aspemyr, W ...
Design and implementation of ESD protection for a 5.5 GHz low noise amplifier (LNA) fabricated in a 90 nm RF CMOS technology is presented.
This paper presents a variable gain low-noise amplifier (VG-LNA) for 5 GHz applications. The effect of the input parasitic capacitance on the inductively ...