Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic
materials has driven significant research activity, with the goal of realizing their …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

Since its inception more than 25 years ago, Piezoresponse Force Microscopy (PFM) has
become one of the mainstream techniques in the field of nanoferroic materials. This review …

Materials with a coexistence of magnetic and ferroelectric order—multiferroics—provide an
efficient route for the control of magnetism by electric fields. The study of multiferroics dates …

The flexoelectricity describes the contribution of the linear couplings between the electric
polarization and strain gradient and between polarization gradient and strain to the …

Ferroelectric materials, because of their robust spontaneous electrical polarization, are
widely used in various applications. Recent advances in modelling, synthesis and …

Ferroelectric domain wall memories have been proposed as a promising candidate for
nonvolatile memories, given their intriguing advantages including low energy consumption …

Ferroelectric domain walls are atomically sharp topological defects that separate regions of
uniform polarization. The discovery of electrical conductivity in specific types of walls gave …

Abstract Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile
memory and logic technologies in which domain walls, rather than domains, serve as an …