A strained silicon cold electron bolometer using Schottky contacts
We describe optical characterisation of a strained silicon cold electron bolometer (CEB),
operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The
silicon cold electron bolometer utilises Schottky contacts between a superconductor and an
n++ doped silicon island to detect changes in the temperature of the charge carriers in the
silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we
decrease the electron-phonon coupling in the device and increase the responsivity to …
operating on a 350 mK stage, designed for absorption of millimetre-wave radiation. The
silicon cold electron bolometer utilises Schottky contacts between a superconductor and an
n++ doped silicon island to detect changes in the temperature of the charge carriers in the
silicon, due to variations in absorbed radiation. By using strained silicon as the absorber, we
decrease the electron-phonon coupling in the device and increase the responsivity to …