Demonstration of an erbium-doped microdisk laser on a silicon chip
Physical Review A—Atomic, Molecular, and Optical Physics, 2006•APS
An erbium-doped microlaser is demonstrated utilizing Si O 2 microdisk resonators on a
silicon chip. Passive microdisk resonators exhibit whispering-gallery-type modes (WGM's)
with intrinsic optical quality factors of up to 6× 10 7 and were doped with trivalent erbium
ions (peak concentration∼ 3.8× 10 20 cm− 3) using MeV ion implantation. Coupling to the
fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber.
Upon pumping of the I 15∕ 2 4→ I 13∕ 2 4 erbium transition at 1450 nm, a gradual …
silicon chip. Passive microdisk resonators exhibit whispering-gallery-type modes (WGM's)
with intrinsic optical quality factors of up to 6× 10 7 and were doped with trivalent erbium
ions (peak concentration∼ 3.8× 10 20 cm− 3) using MeV ion implantation. Coupling to the
fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber.
Upon pumping of the I 15∕ 2 4→ I 13∕ 2 4 erbium transition at 1450 nm, a gradual …
An erbium-doped microlaser is demonstrated utilizing microdisk resonators on a silicon chip. Passive microdisk resonators exhibit whispering-gallery-type modes (WGM’s) with intrinsic optical quality factors of up to and were doped with trivalent erbium ions (peak concentration ) using MeV ion implantation. Coupling to the fundamental WGM of the microdisk resonator was achieved by using a tapered optical fiber. Upon pumping of the erbium transition at , a gradual transition from spontaneous to stimulated emission was observed in the band. Analysis of the pump-output power relation yielded a pump threshold of and allowed measuring the spontaneous emission coupling factor: .
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