(Translated by https://www.hiragana.jp/)
[1410.2619] Model of single-electron performance of micropixel avalanche photodiodes
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Physics > Instrumentation and Detectors

arXiv:1410.2619 (physics)
[Submitted on 9 Oct 2014 (v1), last revised 5 May 2015 (this version, v3)]

Title:Model of single-electron performance of micropixel avalanche photodiodes

Authors:Z. Sadygov, Kh. Abdullaev, G. Akhmedov, F. Akhmedov, S. Khorev, R. Mukhtarov, A. Sadigov, A. Sidelev, A. Titov, F. Zerrouk, V. Zhezher
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Abstract:An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change of electric field within the depleted region caused by internal discharge and external recharge currents. Conclusions obtained as a result of modelling are compared with experimental data. Simulations show that typical durations of the front and rear edges of the discharge current have the same magnitude of less than 50 ps. The front of the external recharge current has the same duration, however duration of the rear edge depends on value of the quenching micro-resistor. It was found that effective capacitance of the pixel calculated as the slope of linear dependence of the pulse charge on bias voltage exceeds its real capacitance by a factor of two, while the total pixel voltage drop equals twice the value of bias overvoltage.
Comments: 15 pages, 10 figures; added comparison with existing models, new modelling results, experimental device details, new references
Subjects: Instrumentation and Detectors (physics.ins-det)
Cite as: arXiv:1410.2619 [physics.ins-det]
  (or arXiv:1410.2619v3 [physics.ins-det] for this version)
  https://doi.org/10.48550/arXiv.1410.2619

Submission history

From: Serge Khorev [view email]
[v1] Thu, 9 Oct 2014 20:42:43 UTC (1,043 KB)
[v2] Thu, 13 Nov 2014 22:38:15 UTC (1,233 KB)
[v3] Tue, 5 May 2015 21:41:07 UTC (1,853 KB)
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