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[1506.00353] Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band
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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1506.00353 (cond-mat)
[Submitted on 1 Jun 2015 (v1), last revised 16 Oct 2015 (this version, v2)]

Title:Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band

Authors:C. B. Lim, A. Ajay, C. Bougerol, B. Haas, J. Schörmann, M. Beeler, J. Lähnemann, M. Eickhoff, E. Monroy
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Abstract:This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN substrates. The quantum wells were designed to contain two confined electronic levels, decoupled from the neighboring wells. Structural analysis reveals flat and regular quantum wells in the two perpendicular inplane directions, with high-resolution images showing inhomogeneities of the Al composition in the barriers along the growth axis. We do not observe extended structural defects introduced by the epitaxial process. Low-temperature intersubband absorption from 1.5 to 9 THz is demonstrated, covering part of the 7 to 10 THz band forbidden to GaAs-based technologies.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:1506.00353 [cond-mat.mes-hall]
  (or arXiv:1506.00353v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1506.00353
Journal reference: Nanotechnology 26, 435201 (2015)
Related DOI: https://doi.org/10.1088/0957-4484/26/17/175201

Submission history

From: Eva Monroy [view email]
[v1] Mon, 1 Jun 2015 05:35:26 UTC (888 KB)
[v2] Fri, 16 Oct 2015 12:42:26 UTC (6,534 KB)
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