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[1910.00489] Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene
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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:1910.00489 (cond-mat)
[Submitted on 1 Oct 2019 (v1), last revised 25 Jan 2021 (this version, v2)]

Title:Valley Hall Effect and Non-Local Resistance in Locally Gapped Graphene

Authors:Thomas Aktor, Jose H. Garcia, Stephan Roche, Antti-Pekka Jauho, Stephen R. Power
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Abstract:We report on the emergence of bulk, valley-polarized currents in graphene-based devices, driven by spatially varying regions of broken sublattice symmetry, and revealed by non-local resistance ($R_\mathrm{NL}$) fingerprints. By using a combination of quantum transport formalisms, giving access to bulk properties as well as multi-terminal device responses, the presence of a non-uniform local bandgap is shown to give rise to valley-dependent scattering and a finite Fermi surface contribution to the valley Hall conductivity, related to characteristics of $R_\mathrm{NL}$. These features are robust against disorder and provide a plausible interpretation of controversial experiments in graphene/hBN superlattices. Our findings suggest both an alternative mechanism for the generation of valley Hall effect in graphene, and a route towards valley-dependent electron optics, by materials and device engineering.
Comments: 6 pages, 4 figures
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1910.00489 [cond-mat.mes-hall]
  (or arXiv:1910.00489v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.1910.00489
Journal reference: Phys. Rev. B 103, 115406 (2021)
Related DOI: https://doi.org/10.1103/PhysRevB.103.115406

Submission history

From: Stephen Power [view email]
[v1] Tue, 1 Oct 2019 15:40:53 UTC (2,293 KB)
[v2] Mon, 25 Jan 2021 12:53:58 UTC (4,578 KB)
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