Physics > Applied Physics
[Submitted on 20 Jul 2020]
Title:Epitaxial Al/GaAs/Al tri-layers fabricated using a novel wafer-bonding technique
View PDFAbstract:Epitaxial Al/GaAs/Al structures having controlled thickness of high-quality GaAs and pristine interfaces have been fabricated using a wafer-bonding technique. III-V semiconductor/Al structures are grown by molecular beam epitaxy on III-V semiconductor substrates and bonded to silicon and sapphire. Selective etching is used to remove the III-V substrate followed by surface cleaning and superconductor regrowth, resulting in epitaxial Al/GaAs/Al tri-layers on sapphire or silicon substrates. Structures are characterized with reflection high energy electron diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, transmission electron microscopy, and X-ray diffraction. Applications of these structures to the field of quantum information processing is discussed.
Submission history
From: Anthony McFadden [view email][v1] Mon, 20 Jul 2020 21:25:41 UTC (1,247 KB)
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