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[2302.13735] Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$
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Condensed Matter > Strongly Correlated Electrons

arXiv:2302.13735 (cond-mat)
[Submitted on 27 Feb 2023]

Title:Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$

Authors:Chen Ran, Xinrun Mi, Junying Shen, Honghui Wang, Kunya Yang, Yan Liu, Guiwen Wang, Guoyu Wang, Youguo Shi, Aifeng Wang, Yisheng Chai, Xiaolong Yang, Mingquan He, Xin Tong, Xiaoyuan Zhou
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Abstract:In the ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$, colossal magnetoresistance (CMR) arises below $T_\mathrm{c}=78$ K due to the interplay of magnetism and topological nodal-line fermiology. The Berry curvature associated with the topological nodal-line is expected to produce an anomalous Nernst effect. Here, we present sizable anomalous Nernst signal in Mn$_3$Si$_2$Te$_6$ below $T_\mathrm{c}$. In the low-magnetic-field region where CMR is most apparent, the scaling ratio between the Nernst signal and magnetization is significantly enhanced compared to that in conventional magnetic materials. The enhanced Nernst effect and CMR likely share the same mechanisms, which are closely linked to the nodal-line topology.
Comments: 6 pages, 4 figures
Subjects: Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:2302.13735 [cond-mat.str-el]
  (or arXiv:2302.13735v1 [cond-mat.str-el] for this version)
  https://doi.org/10.48550/arXiv.2302.13735
Journal reference: Phys. Rev. B 108, 125103 (2023)
Related DOI: https://doi.org/10.1103/PhysRevB.108.125103

Submission history

From: Mingquan He [view email]
[v1] Mon, 27 Feb 2023 13:00:51 UTC (472 KB)
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