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[2404.01144] Electrical-controllable antiferromagnet-based tunnel junction
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Physics > Applied Physics

arXiv:2404.01144 (physics)
[Submitted on 1 Apr 2024]

Title:Electrical-controllable antiferromagnet-based tunnel junction

Authors:Lei Han, Xuming Luo, Yingqian Xu, Hua Bai, Wenxuan Zhu, Yuxiang Zhu, Guoqiang Yu, Cheng Song, Feng Pan
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Abstract:Electrical-controllable antiferromagnet tunnel junction is a key goal in spintronics, holding immense promise for ultra-dense and ultra-stable antiferromagnetic memory with high processing speed for modern information technology. Here, we have advanced towards this goal by achieving an electrical-controllable antiferromagnet-based tunnel junction of Pt/Co/Pt/Co/IrMn/MgO/Pt. The exchange coupling between antiferromagnetic IrMn and Co/Pt perpendicular magnetic multilayers results in the formation of interfacial exchange bias and exchange spring in IrMn. Encoding information states 0 and 1 is realized through the exchange spring in IrMn, which can be electrically written by spin-orbit torque switching with high cyclability and electrically read by antiferromagnetic tunneling anisotropic magnetoresistance. Combining spin-orbit torque switching of both exchange spring andexchange bias, 16 Boolean logic operation is successfully demonstrated. With both memory and logic functionalities integrated into our electrical-controllable antiferromagnetic-based tunnel junction, we chart the course toward high-performance antiferromagnetic logic-in-memory.
Comments: 20 pages, 4 figures
Subjects: Applied Physics (physics.app-ph); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2404.01144 [physics.app-ph]
  (or arXiv:2404.01144v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.2404.01144
Related DOI: https://doi.org/10.1021/acs.nanolett.4c00084

Submission history

From: Cheng Song [view email]
[v1] Mon, 1 Apr 2024 14:45:14 UTC (1,979 KB)
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