(Translated by https://www.hiragana.jp/)
[cond-mat/0306356] Optimization of the extraordinary magnetoresistance in semiconductor-metal hybrid structures for magnetic-field sensor applications
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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:cond-mat/0306356 (cond-mat)
[Submitted on 13 Jun 2003]

Title:Optimization of the extraordinary magnetoresistance in semiconductor-metal hybrid structures for magnetic-field sensor applications

Authors:M. Holz, O. Kronenwerth, D. Grundler
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Abstract: Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with experimental data. In particular, we investigate the important effect of the contact resistance $\rho_c$ between the semiconductor and the metal on the EMR effect. Introducing a realistic $\rho_c=3.5\times 10^{-7} \Omega{\rm cm}^2$ in our model we find that at room temperature this reduces the EMR by 30% if compared to an analysis where $\rho_c$ is not considered.
Comments: 4 pages; manuscript for MSS11 conference 2003, Nara, Japan
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:cond-mat/0306356 [cond-mat.mes-hall]
  (or arXiv:cond-mat/0306356v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.cond-mat/0306356
Related DOI: https://doi.org/10.1016/j.physe.2003.11.146

Submission history

From: Matthias Holz [view email]
[v1] Fri, 13 Jun 2003 09:27:57 UTC (264 KB)
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