Showing 1–50 of 51 results for author: Agraït, N

Microheater actuators as a versatile platform for strain engineering in 2D materials

Authors: Yu Kyoung Ryu, Felix Carrascoso, Rubén López-Nebreda, Nicolás Agraït, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This contro… ▽ More We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64 % and they can be modulated at frequencies up to 8 Hzへるつ. The compact geometry of these actuators results in a negligible spatial drift of 0.03 um/deg, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 5 main text figures + 5 supp. info. figures

Fast Yet Quantum-Efficient Few-Layer Vertical MoS2 Photodetectors

Authors: David Maeso, Andres Castellanos-Gomez, Nicolas Agraït, Gabino Rubio-Bollinger

Abstract: Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit excellent electrical and optical properties. Highly efficient photocurrent (PC) generation is reported in vertical few layer MoS2 devices contacted with semitransparent… ▽ More Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit excellent electrical and optical properties. Highly efficient photocurrent (PC) generation is reported in vertical few layer MoS2 devices contacted with semitransparent metallic electrodes. The light absorption of the device can be improved by fabricating vertical photodevices using few layer flakes, achieving a photoresponse of up to 0.11 A/W and an external quantum efficiency (EQE) of up to 30%. Because of the vertical design, the distance between electrodes can be kept in the range of a few nanometers, thus substantially reducing the collection time of photogenerated carriers and increasing the efficiency of the devices. The wavelength dependent PC, photoresponsivity, and EQE are measured over a photon energy range from 1.24 to 2.58 eV. Compared to previous in plane and vertical devices, these vertical few layer MoS2 photodevices exhibit very short response time, 60 ns, and a cutoff frequency of 5.5 MHz, while maintaining high photoresponsivity. △ Less

Submitted 23 May, 2019; originally announced May 2019.

Comments: Main text: 9 pages, 4 figures. Supp. Info: 8 pages, 5 figures

Journal ref: Advanced Electronic Materials, 2019, 1900141

Strong Modulation of Optical Properties in Rippled 2D GaSe via Strain Engineering

Authors: David Maeso, Sahar Pakdel, Hernan Santos, Nicolas Agrait, Juan Jose Palacios, Elsa Prada, Gabino Rubio-Bollinger

Abstract: Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remar… ▽ More Few-layer GaSe is one of the latest additions to the family of 2D semiconducting crystals whose properties under strain are still relatively unexplored. Here, we study rippled nanosheets that exhibit a periodic compressive and tensile strain of up to 5%. The strain profile modifies the local optoelectronic properties of the alternating compressive and tensile regions, which translates into a remarkable shift of the optical absorption band-edge of up to 1.2 eV between crests and valleys. Our experimental observations are supported by theoretical results from density functional theory calculations performed for monolayers and multilayers (up to 7 layers) under tensile and compressive strain. This large band gap tunability can be explained through a combined analysis of the elastic response of Ga atoms to strain and the symmetry of the wave functions. △ Less

Submitted 6 March, 2019; originally announced March 2019.

Comments: Main text: 10 pages, 3 figures. Supp. Info: 10 pages, 7 figures

The Role of Oligomeric Gold-Thiolate Units in Single Molecule Junc-tions of Thiol-Anchored Molecules

Authors: Edmund Leary, Linda A. Zotti, Delia Miguel, Irene R. Márquez, Lucía Palomino-Ruiz, Juan Manuel Cuerva, Gabino Rubio-Bollinger, M. Teresa González, Nicolás Agrait

Abstract: Using the break junction (BJ) technique we show that Au(RS)2 units play a significant role in thiol-terminated molecular junctions formed on gold. We have studied a range of thiol-terminated compounds, either with the sulfur atoms in direct conjugation with a phenyl core, or bonded to saturated methylene groups. For all molecules we observe at least two distinct groups of conductance plateaus. By… ▽ More Using the break junction (BJ) technique we show that Au(RS)2 units play a significant role in thiol-terminated molecular junctions formed on gold. We have studied a range of thiol-terminated compounds, either with the sulfur atoms in direct conjugation with a phenyl core, or bonded to saturated methylene groups. For all molecules we observe at least two distinct groups of conductance plateaus. By a careful analysis of the length behavior of these plateaus, comparing the behavior across the different cores and with methyl sulfide anchor groups, we demonstrate that the lower conductance groups correspond to the incorporation of Au(RS)2 oligomeric units at the contacts. These structural motifs are found on the surface of gold nanoparticles but they have not before been shown to exist in molecular-break junctions. The results, while exemplifying the complex nature of thiol chemistry on gold, moreover clarify the conductance of 1,4-benzenedithiol on gold. We show that true Au-S-Ph-S-Au junctions have a relatively narrow conductance distribution. △ Less

Submitted 20 March, 2018; originally announced March 2018.

Comments: 9 pages, 7 figures

Journal ref: J. Phys. Chem. C, 2018, 122 (6), 3211

Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures

Authors: Yue Niu, Riccardo Frisenda, Simon A. Svatek, Gloria Orfila, Fernando Gallego, Patricia Gant, Nicolás Agraït, Carlos León, Alberto Rivera-Calzada, David Perez De Lara, Jacobo Santamaría, Andres Castellanos-Gomez

Abstract: The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential num… ▽ More The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential number of combinations almost infinite. Among all these possible combinations, mixing 2D materials with transition metal oxides can result especially useful because of the large amount of interesting physical phenomena displayed separately by these two material families. We present a hybrid device based on the stacking of a single layer MoS2 onto a lanthanum strontium manganite (La0.7Sr0.3MnO3) thin film, creating an atomically thin device. It shows a rectifying electrical transport with a ratio of 103, and a photovoltaic effect with Voc up to 0.4 V. The photodiode behaviour arises as a consequence of the different doping character of these two materials. This result paves the way towards combining the efforts of these two large materials science communities. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Comments: 1 table, 4 figures (+9 supp. info. figures)

Lithography-free electrical transport measurements on 2D materials by direct microprobing

Authors: Patricia Gant, Yue Niu, Simon A. Svatek, Nicolás Agraït, Carmen Munuera, Mar García- Hernández, Riccardo Frisenda, David Perez de Lara, Andres Castellanos-Gomez

Abstract: We present a method to carry out electrical and opto-electronic measurements on 2D materials using carbon fiber microprobes to directly make electrical contacts to the 2D materials without damaging them. The working principle of this microprobing method is illustrated by measuring transport in MoS2 flakes in vertical (transport in the out-of-plane direction) and lateral (transport within the cryst… ▽ More We present a method to carry out electrical and opto-electronic measurements on 2D materials using carbon fiber microprobes to directly make electrical contacts to the 2D materials without damaging them. The working principle of this microprobing method is illustrated by measuring transport in MoS2 flakes in vertical (transport in the out-of-plane direction) and lateral (transport within the crystal plane) configurations, finding performances comparable to those reported for MoS2 devices fabricated by conventional lithographic process. We also show that this method can be used with other 2D materials. △ Less

Submitted 20 May, 2017; originally announced May 2017.

Comments: 7 main text figures + 11 Supp. Info. figures. Total 25 pages

High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors

Authors: Aday J. Molina-Mendoza, Joshua O. Island, Wendel S. Paz, Jose Manuel Clamagirand, Jose Ramón Ares, Eduardo Flores, Fabrice Leardini, Carlos Sánchez, Nicolás Agraït, Gabino Rubio-Bollinger, Herre S. J. van der Zant, Isabel J. Ferrer, J. J. Palacios, Andres Castellanos-Gomez

Abstract: The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titani… ▽ More The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the electrical breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices. △ Less

Submitted 18 April, 2017; originally announced April 2017.

Comments: 24 pages, 9 figures main text, 4 figures supporting information

Journal ref: Adv. Funct. Mater. (2017), 27(13), 1605647

Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures

Authors: Simon A. Svatek, Elisa Antolin, Der-Yuh Lin, Riccardo Frisenda, Christoph Reuter, Aday J. Molina-Mendoza, Manuel Muñoz, Nicolás Agraït, Tsung-Shine Ko, David Perez de Lara, Andres Castellanos-Gomez

Abstract: P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, s… ▽ More P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional doping of MoS2 into n- and p-type has been demonstrated. MoS2 is an interesting material to use for optoelectronic applications due to the potential of low-cost production in large quantities, strong light-matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7 %, a maximum open circuit voltage of 0.51 V, they are stable in air and their rectification characteristics and photovoltaic response are in excellent agreement to the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics. △ Less

Submitted 10 January, 2017; originally announced February 2017.

Comments: 6 main text figures + 5 Supp. Info. figures

Strain engineering of Schottky barriers in single- and few-layer MoS2 vertical devices

Authors: Jorge Quereda, Juan José Palacios, Nicolás Agräit, Andres Castellanos-Gomez, Gabino Rubio-Bollinger

Abstract: We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer MoS2 crystals deposited onto a conductive indium tin oxide (ITO) substrate while measuring simultaneously the I-V characteristics of the vertical tip/MoS2/ITO str… ▽ More We study the effect of local strain in the electronic transport properties of vertical metal-atomically thin MoS2-metal structures. We use a conductive atomic force microscope tip to apply different load forces to monolayer and few-layer MoS2 crystals deposited onto a conductive indium tin oxide (ITO) substrate while measuring simultaneously the I-V characteristics of the vertical tip/MoS2/ITO structures. The structures show rectifying I-V characteristics, with rectification ratios strongly dependent on the applied load. To understand these results, we compare the experimental I-Vs with a double Schottky barrier model, which is in good agreement with our experimental results and allows us to extract quantitative information about the electronic properties of the tip/MoS2/ITO structures and their dependence on the applied load. Finally, we test the stability of the studied structures using them as mechanically tunable current rectifiers. △ Less

Submitted 24 January, 2017; originally announced January 2017.

Comments: Main text: 14 pages, 4 figures. Supp. Info.: 11 pages, 5 figures. We include a Matlab script to numerically solve the back-to-back diode circuit

Highly responsive UV-photodetectors based on single electrospun TiO2 nanofibres

Authors: Aday J. Molina-Mendoza, Alicia Moya, Riccardo Frisenda, Simon A. Svatek, Patricia Gant, Sergio Gonzalez-Abad, Elisa Antolin, Nicolás Agraït, Gabino Rubio-Bollinger, David Perez de Lara, Juan J. Vilatela, Andres Castellanos-Gomez

Abstract: In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (respo… ▽ More In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (responsivity of 90 A/W for 375 nm wavelength) and a response time to illumination of ~ 5 s, which is superior to state-of-the-art TiO2-based UV photodetectors. Both responsivity and response speed are higher in air than in vacuum, due to oxygen adsorbed on the TiO2 surface which traps photoexcited free electrons in the conduction band, thus reducing the recombination processes. The photodetectors are sensitive to light polarization, with an anisotropy ratio of 12%. These results highlight the interesting combination of large surface area and low 1D transport resistance in electrospun TiO2 fibres. The simplicity of the sol-gel/electrospinning synthesis method, combined with a fast response and high responsivity makes them attractive candidates for UV-photodetection in ambient conditions. We anticipate their high (photo) conductance is also relevant for photocatalysis and dye-sensitized solar cells. △ Less

Submitted 3 November, 2016; originally announced November 2016.

Comments: 29 pages, 5 figures in the main text, 9 figures in the Supporting Information. in J. Mater. Chem. C, 2016

Strong quantum confinement effect in the optical properties of ultrathin αあるふぁ-In2Se3

Authors: Jorge Quereda, Robert Biele, Gabino Rubio-Bollinger, Nicolás Agraït, Roberto D'Agosta, Andres Castellanos-Gomez

Abstract: The effect of quantum confinement in the optical absorption spectra of atomically thin αあるふぁ-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated αあるふぁ-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors. The effect of quantum confinement in the optical absorption spectra of atomically thin αあるふぁ-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated αあるふぁ-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors. △ Less

Submitted 18 October, 2016; originally announced October 2016.

Comments: 3 Figures + 6 Supp. Info. figures

Franckeite: a naturally occurring van der Waals heterostructure

Authors: Aday J. Molina-Mendoza, Emerson Giovanelli, Wendel S. Paz, Miguel Angel Niño, Joshua O. Island, Charalambos Evangeli, Lucía Aballe, Michael Foerster, Herre S. J. van der Zant, Gabino Rubio-Bollinger, Nicolás Agraït, J. J. Palacios, Emilio M. Pérez, Andres Castellanos-Gomez

Abstract: The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from… ▽ More The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from poor control over the lattice orientations and the presence of unwanted adsorbates between the stacked layers. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors (exploiting its narrow bandgap) and for p-n junctions based on the stacking of MoS2 (n-doped) and franckeite (p-doped) △ Less

Submitted 21 June, 2016; originally announced June 2016.

Comments: 5 Figures (main text) + 19 Supp. Info. Figures

Enhanced superconductivity in atomically thin TaS2

Authors: Efrén Navarro-Moratalla, Joshua O. Island, Samuel Mañas-Valero, Elena Pinilla-Cienfuegos, Andres Castellanos-Gomez, Jorge Quereda, Gabino Rubio-Bollinger, Luca Chirolli, Jose Angel Silva-Guillén, Nicolás Agraït, Gary A. Steele, Francisco Guinea, Herre S. J. van der Zant, Eugenio Coronado

Abstract: The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of diff… ▽ More The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far. △ Less

Submitted 20 April, 2016; v1 submitted 19 April, 2016; originally announced April 2016.

Comments: 54 pages

Journal ref: Nature Communications, 7, 11043 (2016)

Molecular design and control of fullerene-based bi-thermoelectric materials

Authors: Laura Rincón-García, Ali K. Ismael, Charalambos Evangeli, Iain Grace, Gabino Rubio-Bollinger, Kyriakos Porfyrakis, Nicolás Agraït, Colin J. Lambert

Abstract: Molecular junctions are a versatile test bed for investigating thermoelectricity on the nanoscale1-10 and contribute to the design of new cost-effective environmentally-friendly organic thermoelectric materials11. It has been suggested that transport resonances associated with the discrete molecular levels would play a key role in the thermoelectric performance12,13, but no direct experimental evi… ▽ More Molecular junctions are a versatile test bed for investigating thermoelectricity on the nanoscale1-10 and contribute to the design of new cost-effective environmentally-friendly organic thermoelectric materials11. It has been suggested that transport resonances associated with the discrete molecular levels would play a key role in the thermoelectric performance12,13, but no direct experimental evidence has been reported. Here we study single-molecule junctions of the endohedral fullerene Sc3N@C80 connected to gold electrodes using a scanning tunnelling microscope (STM). We find that the magnitude and sign of the thermopower depend strongly on the orientation of the molecule and on applied pressure. Our theoretical calculations show that the Sc3N inside the fullerene cage creates a sharp resonance near the Fermi level, whose energetic location and hence the thermopower can be tuned by applying pressure. These results reveal that Sc3N@C80 is a bi-thermoelectric material, exhibiting both positive and negative thermopower, and provide an unambiguous demonstration of the importance of transport resonances in molecular junctions. △ Less

Submitted 2 January, 2016; originally announced January 2016.

Centimeter-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy

Authors: Aday J. Molina-Mendoza, Jose Luis Lado, Joshua Island, Miguel Angel Niño, Lucía Aballe, Michael Foerster, Flavio Y. Bruno, Alejandro López-Moreno, Luis Vaquero-Garzon, Herre S. J. van der Zant, Gabino Rubio-Bollinger, Nicolas Agraït, Emilio Perez, Joaquin Fernandez-Rossier, Andres Castellanos-Gomez

Abstract: We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbit… ▽ More We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional theory calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction and thus it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 micrometers by 110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for a laser power density of 13 mW/cm2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor. △ Less

Submitted 20 June, 2016; v1 submitted 14 December, 2015; originally announced December 2015.

Comments: Main text (11 figures) and supporting information (11 figures)

Journal ref: Chemistry of Materials, 2016, 28 (11), pp 4042

Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier

Authors: Gabino Rubio-Bollinger, Ruben Guerrero, David Perez de Lara, Jorge Quereda, Luis Vaquero-Garzon, Nicolas Agraït, Rudolf Bratschitsch, Andres Castellanos-Gomez

Abstract: We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si subst… ▽ More We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%-100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier. △ Less

Submitted 17 November, 2015; originally announced November 2015.

Comments: 4 figures + 3 supp.info. figures

Journal ref: Electronics 2015, 4(4), 847-856

Electronic bandgap and exciton binding energy of layered semiconductor TiS3

Authors: Aday J. Molina-Mendoza, Mariam Barawi, Robert Biele, Eduardo Flores, José R. Ares, Carlos Sánchez, Gabino Rubio-Bollinger, Nicolás Agraït, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation… ▽ More We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation calculations to obtain the electronic and optical bandgaps and thus the exciton binding energy. We find experimental values for the electronic bandgap, optical bandgap and exciton binding energy of 1.2 eV, 1.07 eV and 130 meV, respectively, and 1.15 eV, 1.05 eV and 100 meV for the corresponding theoretical results. The exciton binding energy is orders of magnitude larger than that of common semiconductors and comparable to bulk transition metal dichalcogenides, making TiS3 ribbons a highly interesting material for optoelectronic applications and for studying excitonic phenomena even at room temperature. △ Less

Submitted 21 September, 2015; v1 submitted 18 September, 2015; originally announced September 2015.

Comments: 24 pages, 10 figures

Journal ref: Advanced Electronic Materials vol. 1, issue 9, page 1500126 (2015)

Strong modulation of optical properties in black phosphorus through strain-engineered rippling

Authors: Jorge Quereda, Pablo San-José, Vincenzo Parente, Luis Vaquero-Garzon, Aday Molina-Mendoza, Nicolás Agraït, Gabino Rubio-Bollinger, Francisco Guinea, Rafael Roldán, Andres Castellanos-Gomez

Abstract: Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets sub… ▽ More Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented non-homogeneous deformations before rupture: one can literally bend them and fold them up almost like a piece of paper. Here, we study multi-layer black phosphorus sheets subjected to periodic stress to modulate their optoelectronic properties. We find a remarkable shift of the optical absorption band-edge of up to ~0.7 eV between the regions under tensile and compressive stress, greatly exceeding the strain tunability reported for transition metal dichalcogenides. This observation is supported by theoretical models which also predict that this periodic stress modulation can yield to quantum confinement of carriers at low temperatures. The possibility of generating large strain-induced variations in the local density of charge carriers opens the door for a variety of applications including photovoltaics, quantum optics and two-dimensional optoelectronic devices. △ Less

Submitted 21 April, 2016; v1 submitted 3 September, 2015; originally announced September 2015.

Comments: 16 pages main text + 13 pages SI

Spatially resolved optical absorption spectroscopy of single- and few-layer MoS2 by hyperspectral imaging

Authors: Andres Castellanos-Gomez, Jorge Quereda, Herko P. van der Meulen, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the doping level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-di… ▽ More The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the doping level or applying a mechanical deformation. Therefore, optical spectroscopy techniques with high spatial resolution are necessary to get a deeper insight into the properties of two-dimensional materials. Here we study the optical absorption of single- and few-layer molybdenum disulfide (MoS2) in the spectral range from 1.24 eV to 3.22 eV (385 nm to 1000 nm) by developing a hyperspectral imaging technique that allows one to probe the optical properties with diffraction limited spatial resolution. We find hyperspectral imaging very suited to study indirect bandgap semiconductors, unlike photoluminescence that only provides high luminescence yield for direct gap semiconductors. Moreover, this work opens the door to study the spatial variation of the optical properties of other two-dimensional systems, including non-semiconducting materials where scanning photoluminescence cannot be employed. △ Less

Submitted 3 July, 2015; originally announced July 2015.

Comments: Main text: 4 figures. Supporting information: 4 figures

Single-molecule conductance of a chemically modified, πぱい-extended tetrathiafulvalene and its charge-transfer complex with F4TCNQ

Authors: Raúl García, M. Ángeles Herranz, Edmund Leary, M. Teresa González, Gabino Rubio Bollinger, Marius Bürkle, Linda A. Zotti, Yoshihiro Asai, Fabian Pauly, Juan Carlos Cuevas, Nicolás Agraït, Nazario Martín

Abstract: We describe the synthesis and single molecule electrical transport properties of a molecular wire containing a $πぱい$-extended tetrathiafulvalene (exTTF) group and its charge-transfer complex with F4TCNQ. We form single molecule junctions using the in-situ break junction technique using a home-built scanning tunneling microscope with a range of conductance between 10 G$_{0}$ down to 10$^{-7}$ G… ▽ More We describe the synthesis and single molecule electrical transport properties of a molecular wire containing a $πぱい$-extended tetrathiafulvalene (exTTF) group and its charge-transfer complex with F4TCNQ. We form single molecule junctions using the in-situ break junction technique using a home-built scanning tunneling microscope with a range of conductance between 10 G$_{0}$ down to 10$^{-7}$ G$_{0}$. Within this range we do not observe a clear conductance signature of the neutral parent molecule, suggesting either that its conductance is too low or that it does not form stable junctions. Conversely, we do find a clear conductance signature in the experiments carried out on the charge-transfer complex. Due to the fact we expected this species to have a higher conductance than the neutral molecule, we believe this supports the idea that the conductance of the neutral molecule is very low, below our measurement sensitivity. This is further supported by our theoretical calculations. To the best of our knowledge, these are the first reported single molecule conductance measurements on a molecular charge-transfer species. △ Less

Submitted 25 June, 2015; originally announced June 2015.

Journal ref: Beilstein J.Org.Chem.2015,11,1068-1078

Current rectification in a single molecule diode: the role of electrode coupling

Authors: Siya Sherif, G Rubio-Bollinger, E. Pinilla-Cienfuegos, E. Coronado, J. C. Cuevas, Nicolas Agrait

Abstract: We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10^5 A/cm^2. By fo… ▽ More We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10^5 A/cm^2. By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes. △ Less

Submitted 24 June, 2015; v1 submitted 21 April, 2015; originally announced April 2015.

Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates

Authors: Jorge Quereda, Andres Castellanos-Gomez, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: We experimentally study the surface roughness and the lateral friction force in single-layer MoS2 crystals deposited on different substrates: SiO2, mica and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy (AFM). We find a strong dependence of the MoS2 roughness on the underlying substrate material, being h-BN the substrate which… ▽ More We experimentally study the surface roughness and the lateral friction force in single-layer MoS2 crystals deposited on different substrates: SiO2, mica and hexagonal boron nitride (h-BN). Roughness and sliding friction measurements are performed by atomic force microscopy (AFM). We find a strong dependence of the MoS2 roughness on the underlying substrate material, being h-BN the substrate which better preserves the flatness of the MoS2 crystal. The lateral friction also lowers as the roughness decreases, and attains its lowest value for MoS2 flakes on h-BN substrates. However, it is still higher than for the surface of a bulk MoS2 crystal, which we attribute to the deformation of the flake due to competing tip-to-flake and flake-to-substrate interactions. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Comments: 10 pages, 4 figures

Long-range Scanning Tunneling Microscope for the study of nanostructures on insulating substrates

Authors: Aday Molina-Mendoza, José Gabriel Rodrigo, Joshua Island, Enrique Burzuri, Gabino Rubio-Bollinger, Herre S. J. van der Zant, Nicolás Agraït

Abstract: The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecti… ▽ More The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies. △ Less

Submitted 23 October, 2013; v1 submitted 20 September, 2013; originally announced September 2013.

Comments: 3 pages, 7 figures

Periodic spatial variation of the electron-phonon interaction in epitaxial graphene on Ru(0001

Authors: Andres Castellanos-Gomez, Gabino Rubio-Bollinger, Sara Barja, Manuela Garnica, Amadeo L. Vázquez de Parga, Rodolfo Miranda, Nicolás Agraït

Abstract: We have performed low temperature scanning tunnelling spectroscopy (STS) measurements on graphene epitaxially grown on Ru(0001). An inelastic feature, related to the excitation of a vibrational breathing mode of the graphene lattice, was found at 360 meV. The change in the differential electrical conductance produced by this inelastic feature, which is associated with the electron-phonon interacti… ▽ More We have performed low temperature scanning tunnelling spectroscopy (STS) measurements on graphene epitaxially grown on Ru(0001). An inelastic feature, related to the excitation of a vibrational breathing mode of the graphene lattice, was found at 360 meV. The change in the differential electrical conductance produced by this inelastic feature, which is associated with the electron-phonon interaction strength, varies spatially from one position to other of the graphene supercell. This inhomogeneity in the electronic properties of graphene on Ru(0001) results from local variations of the carbon-ruthenium interaction due to the lattice mismatch between the graphene and the Ru(0001) lattices. △ Less

Submitted 22 February, 2013; originally announced February 2013.

Comments: 6 Pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 063114 (2013

Fast and reliable identification of atomically thin layers of TaSe2 crystals

Authors: Andres Castellanos-Gomez, Efrén Navarro-Moratalla, Guillermo Mokry, Jorge Quereda, Elena Pinilla-Cienfuegos, Nicolás Agraït, Herre S. J. van der Zant, Eugenio Coronado, Gary A. Steele, Gabino Rubio-Bollinger

Abstract: Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 b… ▽ More Deposition of clean and defect-free atomically thin two-dimensional crystalline flakes on surfaces by mechanical exfoliation of layered bulk materials has proven to be a powerful technique, but it requires a fast, reliable and non-destructive way to identify the atomically thin flakes among a crowd of thick flakes. In this work, we provide general guidelines to identify ultrathin flakes of TaSe2 by means of optical microscopy and Raman spectroscopy. Additionally, we determine the optimal substrates to facilitate the optical identification of atomically thin TaSe2 crystals. Experimental realization and isolation of ultrathin layers of TaSe2 enables future studies on the role of the dimensionality in interesting phenomena such as superconductivity and charge density waves. △ Less

Submitted 17 February, 2014; v1 submitted 12 February, 2013; originally announced February 2013.

Comments: It includes supporting information

Journal ref: Nano Research 6 (3) 191-199 (2013)

Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling

Authors: Andres Castellanos-Gomez, Emmanuele Cappelluti, Rafael Roldán, Nicolás Agraït, Francisco Guinea, Gabino Rubio-Bollinger

Abstract: The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experi… ▽ More The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hopping parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing out the important role of the interlayer coupling in the screening of MoS2. △ Less

Submitted 6 November, 2012; v1 submitted 2 November, 2012; originally announced November 2012.

Comments: 13 pages, 3 figures, include supporting information

Journal ref: Advanced Materials, Vol. 25, Iss. 6, pp 899-903 (2013)

Electronic inhomogeneities in graphene: the role of the substrate interaction and chemical doping

Authors: A. Castellanos-Gomez, Arramel, M. Wojtaszek, R. H. M. Smit, N. Tombros, N. Agraït, B. J. van Wees, G. Rubio-Bollinger

Abstract: We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density… ▽ More We probe the local inhomogeneities of the electronic properties of graphene at the nanoscale using scanning probe microscopy techniques. First, we focus on the study of the electronic inhomogeneities caused by the graphene-substrate interaction in graphene samples exfoliated on silicon oxide. We find that charged impurities, present in the graphene-substrate interface, perturb the carrier density significantly and alter the electronic properties of graphene. This finding helps to understand the observed device-to-device variation typically observed in graphene-based electronic devices. Second, we probe the effect of chemical modification in the electronic properties of graphene, grown by chemical vapour deposition on nickel. We find that both the chemisorption of hydrogen and the physisorption of porphyrin molecules strongly depress the conductance at low bias indicating the opening of a bandgap in graphene, paving the way towards the chemical engineering of the electronic properties of graphene. △ Less

Submitted 15 October, 2012; originally announced October 2012.

Comments: http://www.gecarbon.org/Boletines/Boletin/boletinGEC_025.pdf

Journal ref: Boletín del Grupo Español del Carbón, 25 pp.18-22 (2012)

Highly reproducible low temperature scanning tunnelling microscopy and spectroscopy with in situ prepared tips

Authors: Andres Castellanos-Gomez, Gabino Rubio-Bollinger, Manuela Garnica, Sara Barja, Amadeo L. Vázquez de Parga, Rodolfo Miranda, Nicolás Agraït

Abstract: An in situ tip preparation procedure compatible with ultra-low temperature and high magnetic field scanning tunneling microscopes is presented. This procedure does not require additional preparation techniques such as thermal annealing or ion milling. It relies on the local electric-field-induced deposition of material from the tip onto the studied surface. Subsequently, repeated indentations are… ▽ More An in situ tip preparation procedure compatible with ultra-low temperature and high magnetic field scanning tunneling microscopes is presented. This procedure does not require additional preparation techniques such as thermal annealing or ion milling. It relies on the local electric-field-induced deposition of material from the tip onto the studied surface. Subsequently, repeated indentations are performed onto the sputtered cluster to mechanically anneal the tip apex and thus to ensure the stability of the tip. The efficiency of this method is confirmed by comparing the topography and spectroscopy data acquired with either unprepared or in situ prepared tips on epitaxial graphene grown on Ru (0001). We demonstrate that the use of in situ prepared tips increases the stability of the scanning tunneling images and the reproducibility of the spectroscopic measurements. △ Less

Submitted 4 September, 2012; originally announced September 2012.

Comments: 9 Pages, 4 figures (including supp. material)

Journal ref: Ultramicroscopy 122 (2012) 1-5

Mechanical properties of freely suspended atomically thin dielectric layers of mica

Authors: Andres Castellanos-Gomez, Menno Poot, Albert Amor-Amorós, Gary A. Steele, Herre S. J. van der Zant, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: We have studied the elastic deformation of freely suspended atomically thin sheets of muscovite mica, a widely used electrical insulator in its bulk form. Using an atomic force microscope, we carried out bending test experiments to determine the Young's modulus and the initial pre-tension of mica nanosheets with thicknesses ranging from 14 layers down to just one bilayer. We found that their Young… ▽ More We have studied the elastic deformation of freely suspended atomically thin sheets of muscovite mica, a widely used electrical insulator in its bulk form. Using an atomic force microscope, we carried out bending test experiments to determine the Young's modulus and the initial pre-tension of mica nanosheets with thicknesses ranging from 14 layers down to just one bilayer. We found that their Young's modulus is high (190 GPa), in agreement with the bulk value, which indicates that the exfoliation procedure employed to fabricate these nanolayers does not introduce a noticeable amount of defects. Additionally, ultrathin mica shows low pre-strain and can withstand reversible deformations up to tens of nanometers without breaking. The low pre-tension and high Young's modulus and breaking force found in these ultrathin mica layers demonstrates their prospective use as a complement for graphene in applications requiring flexible insulating materials or as reinforcement in nanocomposites. △ Less

Submitted 30 August, 2012; originally announced August 2012.

Comments: 9 pages, 5 figures, selected as cover of Nano Research, Volume 5, Number 8 (2012)

Journal ref: Nano Research, Volume 5, Number 8 (2012), 550-557

Carbon-fiber tips for scanning probe microscopes and molecular electronics experiments

Authors: Gabino Rubio-Bollinger, Andres Castellanos-Gomez, Stefan Bilan, Linda A. Zotti, Carlos R. Arroyo, Nicolás Agraït, Juan Carlos Cuevas

Abstract: We fabricate and characterize carbon-fiber tips for their use in combined scanning tunneling and force microscopy based on piezoelectric quartz tuning fork force sensors. An electrochemical fabrication procedure to etch the tips is used to yield reproducible sub-100-nm apex. We also study electron transport through single-molecule junctions formed by a single octanethiol molecule bonded by the thi… ▽ More We fabricate and characterize carbon-fiber tips for their use in combined scanning tunneling and force microscopy based on piezoelectric quartz tuning fork force sensors. An electrochemical fabrication procedure to etch the tips is used to yield reproducible sub-100-nm apex. We also study electron transport through single-molecule junctions formed by a single octanethiol molecule bonded by the thiol anchoring group to a gold electrode and linked to a carbon tip by the methyl group. We observe the presence of conductance plateaus during the stretching of the molecular bridge, which is the signature of the formation of a molecular junction. △ Less

Submitted 24 May, 2012; originally announced May 2012.

Comments: Conference Proceeding (Trends in NanoTechnology 2011, Tenerife SPAIN); Nanoscale Research Letters, (2012) 7:254

Journal ref: Nanoscale Research Letters, (2012) 7:254

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

Authors: Andres Castellanos-Gomez, Menno Poot, Gary A. Steele, Herre S. J. van der Zant, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: We fabricate freely suspended nanosheets of MoS2 which are characterized by quantitative optical microscopy and high resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young's modulus and the initial pre-tension of the nanosheets are determined by performing a nanoscopic version of a bending test exper… ▽ More We fabricate freely suspended nanosheets of MoS2 which are characterized by quantitative optical microscopy and high resolution friction force microscopy. We study the elastic deformation of freely suspended nanosheets of MoS2 using an atomic force microscope. The Young's modulus and the initial pre-tension of the nanosheets are determined by performing a nanoscopic version of a bending test experiment. MoS2 sheets show high elasticity and an extremely high Young's modulus (0.30 TPa, 50% larger than steel). These results make them a potential alternative to graphene in applications requiring flexible semiconductor materials. △ Less

Submitted 16 May, 2012; originally announced May 2012.

Comments: Conference Proceeding (Trends in NanoTechnology 2011, Tenerife SPAIN); Nanoscale Research Letters, (2012) 7:233

Calibration of piezoelectric positioning actuators using a reference voltage-to-displacement transducer based on quartz tuning forks

Authors: Andres Castellanos-Gomez, Carlos R. Arroyo, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: We use a piezoelectric quartz tuning fork to calibrate the displacement of ceramic piezoelectric scanners which are widely employed in scanning probe microscopy. We measure the static piezoelectric response of a quartz tuning fork and find it to be highly linear, non-hysteretic and with negligible creep. These performance characteristics, close to those of an ideal transducer, make quartz transduc… ▽ More We use a piezoelectric quartz tuning fork to calibrate the displacement of ceramic piezoelectric scanners which are widely employed in scanning probe microscopy. We measure the static piezoelectric response of a quartz tuning fork and find it to be highly linear, non-hysteretic and with negligible creep. These performance characteristics, close to those of an ideal transducer, make quartz transducers superior to ceramic piezoelectric actuators. Furthermore, quartz actuators in the form of a tuning fork have the advantage of yielding static displacements comparable to those of local probe microscope scanners. We use the static displacement of a quartz tuning fork as a reference to calibrate the three axis displacement of a ceramic piezoelectric scanner. Although this calibration technique is a non-traceable method, it can be more versatile than using calibration grids because it enables to characterize the linear and non-linear response of a piezoelectric scanner in a broad range of displacements, spanning from a fraction of a nanometer to hundreds of nanometers. In addition, the creep and the speed dependent piezoelectric response of ceramic scanners can be studied in detail. △ Less

Submitted 26 March, 2012; originally announced March 2012.

Comments: 9 pages, 3 figures

Journal ref: Microscopy and Microanalysis. vol. 18 iss. 2, pp 353-358 (2012)

Elastic properties of freely suspended MoS2 nanosheets

Authors: Andres Castellanos-Gomez, Menno Poot, Gary A. Steele, Herre S. J. van der Zant, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: We study the elastic deformation of few layers (5 to 25) thick freely suspended MoS2 nanosheets by means of a nanoscopic version of a bending test experiment, carried out with the tip of an atomic force microscope. The Young's modulus of these nanosheets is extremely high (E = 0.33 TPa), comparable to that of graphene oxide, and the deflections are reversible up to tens of nanometers. We study the elastic deformation of few layers (5 to 25) thick freely suspended MoS2 nanosheets by means of a nanoscopic version of a bending test experiment, carried out with the tip of an atomic force microscope. The Young's modulus of these nanosheets is extremely high (E = 0.33 TPa), comparable to that of graphene oxide, and the deflections are reversible up to tens of nanometers. △ Less

Submitted 20 February, 2012; originally announced February 2012.

Comments: 11 pages, 7 figures (including supplementary information)

Journal ref: Advanced Materials, vol. 24, iss. 6, pp 772-775 (2012)

Spatially resolved electronic inhomogeneities of graphene due to subsurface charges

Authors: Andres Castellanos-Gomez, Roel H. M. Smit, Nicolás Agraït, Gabino Rubio-Bollinger

Abstract: We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential difference measurements using electrostatic force microscopy permit us to obtain the average charge density but it does not provide enough resolution to identi… ▽ More We probe the local inhomogeneities in the electronic properties of exfoliated graphene due to the presence of charged impurities in the SiO2 substrate using a combined scanning tunneling and electrostatic force microscope. Contact potential difference measurements using electrostatic force microscopy permit us to obtain the average charge density but it does not provide enough resolution to identify individual charges. We find that the tunneling current decay constant, which is related to the local tunneling barrier height, enables one to probe the electronic properties of graphene distorted at the nanometer scale by individual charged impurities. We observe that such inhomogeneities do not show long range ordering and their surface density obtained by direct counting is consistent with the value obtained by macroscopic charge density measurements. These microscopic perturbations of the carrier density significantly alter the electronic properties of graphene, and their characterization is essential for improving the performance of graphene based devices. △ Less

Submitted 4 November, 2011; v1 submitted 3 November, 2011; originally announced November 2011.

Comments: 22 pages, 13 figures (including supporting information); Carbon (2011)

Journal ref: Carbon, 2012. 50(3): pp. 932-938

Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene

Authors: Andres Castellanos-Gomez, Magdalena Wojtaszek, Nikolaos Tombros, Nicolas Agrait, Bart J. van Wees, Gabino Rubio-Bollinger

Abstract: We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparatio… ▽ More We show that it is possible to deposit, by mechanical exfoliation on SiO2/Si wafers, atomically thin mica flakes down to a single monolayer thickness. The optical contrast of these mica flakes on top of a SiO2/Si substrate, which depends on their thickness, the illumination wavelength and the SiO2 substrate thickness, can be quantitatively accounted for by a Fresnel law based model. The preparation of atomically thin insulating crystalline sheets will enable the fabrication of ultrathin defect-free insulating substrates, dielectric barriers or planar electron tunneling junctions. Additionally, we show that few-layer graphene flakes can be deposited on top of a previously transferred mica flake. Our transfer method relies on viscoelastic stamps, as those used for soft lithography. A Raman spectroscopy study shows that such an all-dry deposition technique yields cleaner and higher quality flakes than conventional wet-transfer procedures based on lithographic resists. △ Less

Submitted 9 September, 2011; originally announced September 2011.

Comments: 11 pages, 5 figures, 1 graphical abstract

Journal ref: Small. Vol. 7, No. 17, 2491--2497 (2011)

Carbon tips as electrodes for single-molecule junctions

Authors: Andres Castellanos-Gomez, Stefan Bilan, Linda A. Zotti, Carlos R. Arroyo, Nicolas Agrait, Juan Carlos Cuevas, Gabino Rubio-Bollinger

Abstract: We study electron transport through single-molecule junctions formed by an octanethiol molecule bonded with the thiol anchoring group to a gold electrode and the opposing methyl endgroup to a carbon tip. Using the scanning tunneling microscope based break junction technique, we measure the electrical conductance of such molecular junctions. We observe the presence of well-defined conductance plate… ▽ More We study electron transport through single-molecule junctions formed by an octanethiol molecule bonded with the thiol anchoring group to a gold electrode and the opposing methyl endgroup to a carbon tip. Using the scanning tunneling microscope based break junction technique, we measure the electrical conductance of such molecular junctions. We observe the presence of well-defined conductance plateaus during the stretching of the molecular bridge, which is the signature of the formation of a molecular junction. △ Less

Submitted 3 November, 2011; v1 submitted 9 September, 2011; originally announced September 2011.

Comments: 10 pages, 5 figures (including supplementary information)

Journal ref: Appl. Phys. Lett. 99, 123105 (2011)

Force-gradient-induced mechanical dissipation of quartz tuning fork force sensors used in atomic force microscopy

Authors: Andres Castellanos-Gomez, Nicolas Agraït, Gabino Rubio-Bollinger

Abstract: We have studied the dynamics of quartz tuning fork resonators used in atomic force microscopy taking into account mechanical energy dissipation through the attachment of the tuning fork base. We find that the tuning fork resonator quality factor changes even for the case of a purely elastic sensor-sample interaction. This is due to the effective mechanical imbalance of the tuning fork prongs induc… ▽ More We have studied the dynamics of quartz tuning fork resonators used in atomic force microscopy taking into account mechanical energy dissipation through the attachment of the tuning fork base. We find that the tuning fork resonator quality factor changes even for the case of a purely elastic sensor-sample interaction. This is due to the effective mechanical imbalance of the tuning fork prongs induced by the sensor-sample force gradient which in turn has an impact on the dissipation through the attachment of the resonator base. This effect may yield a measured dissipation signal that can be different to the one exclusively related to the dissipation between the sensor and the sample. We also find that there is a second order term in addition to the linear relationship between the sensor-sample force gradient and the resonance frequency shift of the tuning fork that is significant even for force gradients usually present in atomic force microscopy which are in the range of tens of N/m. △ Less

Submitted 18 February, 2011; originally announced February 2011.

Comments: 9 pages, 3 figures and supplemental information

Journal ref: Ultramicroscopy 111 (3), 186-190 (2011)

Carbon fibre tips for scanning probe microscopy based on quartz tuning fork force sensors

Authors: Andres Castellanos-Gomez, Nicolas Agraït, Gabino Rubio-Bollinger

Abstract: We report the fabrication and the characterization of carbon fibre tips for their use in combined scanning tunnelling and force microscopy based on piezoelectric quartz tuning fork force sensors. We find that the use of carbon fibre tips results in a minimum impact on the dynamics of quartz tuning fork force sensors yielding a high quality factor and consequently a high force gradient sensitivity.… ▽ More We report the fabrication and the characterization of carbon fibre tips for their use in combined scanning tunnelling and force microscopy based on piezoelectric quartz tuning fork force sensors. We find that the use of carbon fibre tips results in a minimum impact on the dynamics of quartz tuning fork force sensors yielding a high quality factor and consequently a high force gradient sensitivity. This high force sensitivity in combination with high electrical conductivity and oxidation resistance of carbon fibre tips make them very convenient for combined and simultaneous scanning tunnelling microscopy and atomic force microscopy measurements. Interestingly, these tips are quite robust against occasionally occurring tip crashes. An electrochemical fabrication procedure to etch the tips is presented that produces a sub-100 nm apex radius in a reproducible way which can yield high resolution images. △ Less

Submitted 12 March, 2010; originally announced March 2010.

Comments: 14 pages, 10 figures

Journal ref: Nanotechnology 21, 145702 (2010)

Dynamics of quartz tuning fork force sensors used in scanning probe microscopy

Authors: Andres Castellanos-Gomez, Nicolas Agraït, Gabino Rubio-Bollinger

Abstract: We have performed an experimental characterization of the dynamics of oscillating quartz tuning forks which are being increasingly used in scanning probe microscopy as force sensors. We show that tuning forks can be described as a system of coupled oscillators. Nevertheless, this description requires the knowledge of the elastic coupling constant between the prongs of the tuning fork, which has no… ▽ More We have performed an experimental characterization of the dynamics of oscillating quartz tuning forks which are being increasingly used in scanning probe microscopy as force sensors. We show that tuning forks can be described as a system of coupled oscillators. Nevertheless, this description requires the knowledge of the elastic coupling constant between the prongs of the tuning fork, which has not yet been measured. Therefore tuning forks have been usually described within the single oscillator or the weakly coupled oscillators approximation that neglects the coupling between the prongs. We propose three different procedures to measure the elastic coupling constant: an opto-mechanical method, a variation of the Cleveland method and a thermal noise based method. We find that the coupling between the quartz tuning fork prongs has a strong influence on the dynamics and the measured motion is in remarkable agreement with a simple model of coupled harmonic oscillators. The precise determination of the elastic coupling between the prongs of a tuning fork allows to obtain a quantitative relation between the resonance frequency shift and the force gradient acting at the free end of a tuning fork prong. △ Less

Submitted 12 March, 2010; originally announced March 2010.

Comments: 16 pages, 6 figures, 2 Tables

Journal ref: Nanotechnology 20 215502 (2009)

Optical identification of atomically thin dichalcogenide crystals

Authors: Andres Castellanos-Gomez, Nicolas Agraït, Gabino Rubio-Bollinger

Abstract: We present a systematic study of the optical contrast of diselenide (NbSe2) and molybdenum disulphide (MoS2) flakes deposited onto Si wafers with a thermally grown SiO2 layer. We measure the optical contrast of flakes whose thickness ranges from 200 layers down to a monolayer using different illumination wavelengths in the visible spectrum. The refractive index of these thin crystals has been obta… ▽ More We present a systematic study of the optical contrast of diselenide (NbSe2) and molybdenum disulphide (MoS2) flakes deposited onto Si wafers with a thermally grown SiO2 layer. We measure the optical contrast of flakes whose thickness ranges from 200 layers down to a monolayer using different illumination wavelengths in the visible spectrum. The refractive index of these thin crystals has been obtained from the measured optical contrast dependence on the flake thickness by using a simple model based on the Fresnel law. With the refractive index of these NbSe2 and MoS2 crystallites, the optical microscopy data can be quantitatively analyzed to determine the thickness of the flakes in a fast and non-destructive way. △ Less

Submitted 22 June, 2010; v1 submitted 12 March, 2010; originally announced March 2010.

Comments: 8 pages, 3 figures and 3 supplemental figures

Journal ref: Applied Physics Letters 96 213116 (2010)

Characterization of single-molecule pentanedithiol junctions by inelastic electron tunneling spectroscopy and first-principles calculations

Authors: Carlos R. Arroyo, Thomas Frederiksen, Gabino Rubio-Bollinger, Marisela Velez, Andres Arnau, Daniel Sanchez-Portal, Nicolas Agrait

Abstract: We study pentanedithiol molecular junctions formed by means of the break-junction technique with a scanning tunneling microscope at low temperatures. Using inelastic electron tunneling spectroscopy and first-principles calculations, the response of the junction to elastic deformation is examined. We show that this procedure makes a detailed characterization of the molecular junction possible. In… ▽ More We study pentanedithiol molecular junctions formed by means of the break-junction technique with a scanning tunneling microscope at low temperatures. Using inelastic electron tunneling spectroscopy and first-principles calculations, the response of the junction to elastic deformation is examined. We show that this procedure makes a detailed characterization of the molecular junction possible. In particular, our results indicate that tunneling takes place through just a single molecule. △ Less

Submitted 14 January, 2010; originally announced January 2010.

Comments: 5 pages, 4 figures (accepted in Phys. Rev. B)

Journal ref: Phys. Rev. B 81, 075405 (2010)

Universal features of electron-phonon interactions in atomic wires

Authors: L. de la Vega, A. Martin-Rodero, N. Agrait, A. Levy Yeyati

Abstract: The effect of electron-phonon interactions in the conductance through metallic atomic wires is theoretically analyzed. The proposed model allows to consider an atomic size region electrically and mechanically coupled to bulk electrodes. We show that under rather general conditions the features due to electron-phonon coupling are described by universal functions of the system transmission coeffic… ▽ More The effect of electron-phonon interactions in the conductance through metallic atomic wires is theoretically analyzed. The proposed model allows to consider an atomic size region electrically and mechanically coupled to bulk electrodes. We show that under rather general conditions the features due to electron-phonon coupling are described by universal functions of the system transmission coefficients. It is predicted that the reduction of the conductance due to electron-phonon coupling which is observed close to perfect transmission should evolve into an enhancement at low transmission. This crossover can be understood in a transparent way as arising from the competition between elastic and inelastic processes. △ Less

Submitted 11 November, 2005; originally announced November 2005.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 73, 075428 (2006)

Distribution of conduction channels in nanoscale contacts: Evolution towards the diffusive limit

Authors: J. J. Riquelme, L. de la Vega, A. Levy Yeyati, N. Agrait, A. Martin-Rodero, G. Rubio-Bollinger

Abstract: We present an experimental determination of the conduction channel distribution in lead nanoscale contacts with total conductances ranging from 1 to 15 G0, where G0=2e2/h. It is found that even for contacts having a cross section much smaller than the mean free path the distribution tends to be remarkably close to the universal diffusive limit. With the help of theoretical calculations we show t… ▽ More We present an experimental determination of the conduction channel distribution in lead nanoscale contacts with total conductances ranging from 1 to 15 G0, where G0=2e2/h. It is found that even for contacts having a cross section much smaller than the mean free path the distribution tends to be remarkably close to the universal diffusive limit. With the help of theoretical calculations we show that this behavior can be associated with the specific band structure of lead which produces a significant contribution of partially open channels even in the absence of atomic disorder. Published in Europhysics Letters, http://www.edpsciences.org/articles/epl/abs/2005/11/epl8748/epl8748.html △ Less

Submitted 1 June, 2005; originally announced June 2005.

Journal ref: Europhys. Lett., 70 (5), pp. 663-669 (2005)

Single-channel transmission in gold one-atom contacts and chains

Authors: G. Rubio-Bollinger, C. de las Heras, E. Bascones, N. Agrait, F. Guinea, S. Vieira

Abstract: We induce superconductivity by proximity effect in thin layers of gold and study the number of conduction channels which contribute to the current in one-atom contacts and atomic wires. The atomic contacts and wires are fabricated with a Scanning Tunneling Microscope. The set of transmission probabilities of the conduction channels is obtained from the analysis of the $I(V)$ characteristic curve… ▽ More We induce superconductivity by proximity effect in thin layers of gold and study the number of conduction channels which contribute to the current in one-atom contacts and atomic wires. The atomic contacts and wires are fabricated with a Scanning Tunneling Microscope. The set of transmission probabilities of the conduction channels is obtained from the analysis of the $I(V)$ characteristic curve which is highly non-linear due to multiple Andreev reflections. In agreement with theoretical calculations we find that there is only one channel which is almost completely open. △ Less

Submitted 11 March, 2003; originally announced March 2003.

Comments: 4 pages, 2 figures. To be published in Phys. Rev. B, Rapid Communications (2003)

Quantum properties of atomic-sized conductors

Authors: Nicolas Agrait, Alfredo Levy Yeyati, Jan M. van Ruitenbeek

Abstract: Using remarkably simple experimental techniques it is possible to gently break a metallic contact and thus form conducting nanowires. During the last stages of the pulling a neck-shaped wire connects the two electrodes, the diameter of which is reduced to single atom upon further stretching. For some metals it is even possible to form a chain of individual atoms in this fashion. Although the ato… ▽ More Using remarkably simple experimental techniques it is possible to gently break a metallic contact and thus form conducting nanowires. During the last stages of the pulling a neck-shaped wire connects the two electrodes, the diameter of which is reduced to single atom upon further stretching. For some metals it is even possible to form a chain of individual atoms in this fashion. Although the atomic structure of contacts can be quite complicated, as soon as the weakest point is reduced to just a single atom the complexity is removed. The properties of the contact are then dominantly determined by the nature of this atom. This has allowed for quantitative comparison of theory and experiment for many properties, and atomic contacts have proven to form a rich test-bed for concepts from mesoscopic physics. Properties investigated include multiple Andreev reflection, shot noise, conductance quantization, conductance fluctuations, and dynamical Coulomb blockade. In addition, pronounced quantum effects show up in the mechanical properties of the contacts, as seen in the force and cohesion energy of the nanowires. We review this reseach, which has been performed mainly during the past decade, and we discuss the results in the context of related developments. △ Less

Submitted 24 December, 2002; v1 submitted 12 August, 2002; originally announced August 2002.

Comments: Review, 120 pages, 98 figures. In view of the file size figures have been compressed. A higher-resolution version can be found at: http://lions1.leidenuniv.nl/wwwhome/ruitenbe/review/QPASC-hr-ps-v2.zip (5.6MB zip PostScript)

Journal ref: Physics Reports, volume 377 (2003) 81-279.

Calibration of the length of a chain of single gold atoms

Authors: C. Untiedt, A. I. Yanson, R. Grande, G. Rubio-Bollinger, N. Agrait, S. Vieira, J. M. Van Ruitenbeek

Abstract: Using a scanning tunneling microscope or mechanically controllable break junctions it has been shown that it is possible to control the formation of a wire made of single gold atoms. In these experiments an interatomic distance between atoms in the chain of ~3.6 Angstrom was reported which is not consistent with recent theoretical calculations. Here, using precise calibration procedures for both… ▽ More Using a scanning tunneling microscope or mechanically controllable break junctions it has been shown that it is possible to control the formation of a wire made of single gold atoms. In these experiments an interatomic distance between atoms in the chain of ~3.6 Angstrom was reported which is not consistent with recent theoretical calculations. Here, using precise calibration procedures for both techniques, we measure length of the atomic chains. Based on the distance between the peaks observed in the chain length histogram we find the mean value of the inter-atomic distance before chain rupture to be 2.6 +/- 0.2 A . This value agrees with the theoretical calculations for the bond length. The discrepancy with the previous experimental measurements was due to the presence of He gas, that was used to promote the thermal contact, and which affects the value of the work function that is commonly used to calibrate distances in scanning tunnelling microscopy and mechanically controllable break junctions at low temperatures. △ Less

Submitted 19 August, 2002; v1 submitted 20 February, 2002; originally announced February 2002.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 66 (2002) 085418

Onset of dissipation in ballistic atomic wires

Authors: N. Agrait, C. Untiedt, G. Rubio-Bollinger, S. Vieira

Abstract: Electronic transport at finite voltages in free-standing gold atomic chains of up to 7 atoms in length is studied at low temperatures using a scanning tunneling microscope (STM). The conductance vs voltage curves show that transport in these single-mode ballistic atomic wires is non-dissipative up to a finite voltage threshold of the order of several mV. The onset of dissipation and resistance w… ▽ More Electronic transport at finite voltages in free-standing gold atomic chains of up to 7 atoms in length is studied at low temperatures using a scanning tunneling microscope (STM). The conductance vs voltage curves show that transport in these single-mode ballistic atomic wires is non-dissipative up to a finite voltage threshold of the order of several mV. The onset of dissipation and resistance within the wire corresponds to the excitation of the atomic vibrations by the electrons traversing the wire and is very sensitive to strain. △ Less

Submitted 29 October, 2001; originally announced October 2001.

Comments: Revtex4, 4 pages, 3 figs

Mechanical properties and formation mechanisms of a wire of single gold atoms

Authors: G. Rubio-Bollinger, S. R. Bahn, N. Agrait, K. W. Jacobsen, S. Vieira

Abstract: A scanning tunneling microscope (STM) supplemented with a force sensor is used to study the mechanical properties of a novel metallic nanostructure: a freely suspended chain of single gold atoms. We find that the bond strength of the nanowire is about twice that of a bulk metallic bond. We perform ab initio calculations of the force at chain fracture and compare quantitatively with experimental… ▽ More A scanning tunneling microscope (STM) supplemented with a force sensor is used to study the mechanical properties of a novel metallic nanostructure: a freely suspended chain of single gold atoms. We find that the bond strength of the nanowire is about twice that of a bulk metallic bond. We perform ab initio calculations of the force at chain fracture and compare quantitatively with experimental measurements. The observed mechanical failure and nanoelastic processes involved during atomic wire fabrication are investigated using molecular dynamics (MD) simulations, and we find that the total effective stiffness of the nanostructure is strongly affected by the detailed local atomic arrangement at the chain bases. △ Less

Submitted 14 May, 2001; originally announced May 2001.

Comments: To be published in Phys. Rev. Lett. 4 pages with 3 figures

Formation and manipulation of a metallic wire of single gold atoms

Authors: A. I. Yanson, G. Rubio Bollinger, H. E. van den Brom, N. Agrait, J. M. van Ruitenbeek

Abstract: The continuing miniaturization of microelectronics raises the prospect of nanometre-scale devices with mechanical and electrical properties that are qualitatively different from those at larger dimensions. The investigation of these properties, and particularly the increasing influence of quantum effects on electron transport, has therefore attracted much interest. Quantum properties of the cond… ▽ More The continuing miniaturization of microelectronics raises the prospect of nanometre-scale devices with mechanical and electrical properties that are qualitatively different from those at larger dimensions. The investigation of these properties, and particularly the increasing influence of quantum effects on electron transport, has therefore attracted much interest. Quantum properties of the conductance can be observed when `breaking' a metallic contact: as two metal electrodes in contact with each other are slowly retracted, the contact area undergoes structural rearrangements until it consists in its final stages of only a few bridging atoms. Just before the abrubt transition to tunneling occurs, the electrical conductance through a monovalent metal contact is always close to a value of 2e^2/h, where e is the charge on an electron and h is Plack's constant. This value corresponds to one quantum unit of conductance, thus indicating that the `neck' of the contact consists of a single atom. In contrast to previous observations of only single-atom necks, here we describe the breaking of atomic-scale gold contacts, which leads to the formation of gold chains one atom thick and at least four atoms long. Once we start to pull out a chain, the conductance never exceeds 2e^2/h, confirming that it acts as a one-dimensional quantized nanowire. Given their high stability and the ability to support ballistic electron transport, these structures seem well suited for the investigation of atomic-scale electronics. △ Less

Submitted 6 November, 1998; originally announced November 1998.

Comments: 5 pages, 3 figures

Journal ref: Nature Vol. 395 (1998) 783-785

Nanosized superconducting constrictions

Authors: M. Poza, E. Bascones, J. G. Rodrigo, N. Agrait, S. Vieira, F. Guinea

Abstract: Nanowires of lead between macroscopic electrodes are produced by means of an STM. Magnetic fields may destroy the superconductivity in the electrodes, while the wire remains in the superconducting state. The properties of the resulting microscopic Josephson junctions are investigated. Nanowires of lead between macroscopic electrodes are produced by means of an STM. Magnetic fields may destroy the superconductivity in the electrodes, while the wire remains in the superconducting state. The properties of the resulting microscopic Josephson junctions are investigated. △ Less

Submitted 3 April, 1998; originally announced April 1998.

Comments: 3 pages,3 eps figures included