Self-Hybridized Exciton-Polariton Photovoltaics
Authors:
Adam D. Alfieri,
Tobia Ruth,
Cheryl Lim,
Jason Lynch,
Deep Jariwala
Abstract:
Excitonic semiconductors are attractive for next-generation photovoltaics (PVs) with lower cost, lighter weight, and lower material consumption than conventional technologies. Among them, transition metal dichalcogenide materials like WS2 are especially interesting due to exceptionally strong light-matter interaction. Photocurrent generation in excitonic PVs relies on exciton diffusion to heteroin…
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Excitonic semiconductors are attractive for next-generation photovoltaics (PVs) with lower cost, lighter weight, and lower material consumption than conventional technologies. Among them, transition metal dichalcogenide materials like WS2 are especially interesting due to exceptionally strong light-matter interaction. Photocurrent generation in excitonic PVs relies on exciton diffusion to heterointerfaces. However, efficiencies of excitonic PVs are often limited by short exciton diffusion lengths. Here we report that the strong coupling of excitons to cavity photons in a WS2 absorber layer can enhance the external quantum efficiency by a factor of >10, internal quantum efficiency by a factor of ~3, and power conversion efficiency of excitonic PVs by an order of magnitude. The resulting hybrid states, exciton-polaritons, enhance the resonant absorption and exciton transport while the use of the WS2 layer as its own optical cavity enables broadband absorption. Thickness dependent device characterization reveals anomalous internal quantum efficiency and fill factor behavior that are attributed to novel exciton-polariton transport. Exciton-polariton enhanced transport occurs for both resonant and off-resonant excitation, emphasizing the value and practicality of the self-hybridized device structure. Our work presents a route towards excitonic PVs with broadband absorption and improved exciton transport without strict requirements of donor/acceptor structure of other excitonic PVs.
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Submitted 18 June, 2024;
originally announced June 2024.
Ultrathin Broadband Metasurface Superabsorbers from a van der Waals Semimetal
Authors:
Adam D. Alfieri,
Michael J. Motala,
Michael Snure,
Jason Lynch,
Pawan Kumar,
Huiqin Zhang,
Susanna Post,
Christopher Muratore,
Joshua R. Hendrickson,
Nicholas R. Glavin,
Deep Jariwala
Abstract:
Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broa…
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Metamaterials and metasurfaces operating in the visible and near-infrared (NIR) offer a promising route towards next-generation photodetectors and devices for solar energy harvesting. While numerous metamaterials and metasurfaces using metals and semiconductors have been demonstrated, semimetals-based metasurfaces in the vis-NIR range are notably missing. Here, we experimentally demonstrate a broadband metasurface superabsorber based on large area, semimetallic, van der Waals PtSe2 thin films in agreement with electromagnetic simulations. Our results show that PtSe2 is an ultrathin and scalable semimetal that concurrently possesses high index and high extinction across the vis-NIR range. Consequently, the thin-film PtSe2 on a reflector separated by a dielectric spacer can absorb > 85 % for the unpatterned case and ~97 % for the optimized 2D metasurface in the 400-900 nm range making it one of the strongest and thinnest broadband perfect absorbers to date. Our results present a scalable approach to photodetection and solar energy harvesting, demonstrating the practical utility of high index, high extinction semimetals for nanoscale optics.
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Submitted 28 August, 2022;
originally announced August 2022.
