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A reversible system based on hybrid toggle radius-4 cellular automata and its application as a block cipher
Authors:
Everton R. Lira,
Heverton B. de Macêdo,
Danielli A. Lima,
Leonardo Alt,
Gina M. B. Oliveira
Abstract:
The dynamical system described herein uses a hybrid cellular automata (CA) mechanism to attain reversibility, and this approach is adapted to create a novel block cipher algorithm called HCA. CA are widely used for modeling complex systems and employ an inherently parallel model. Therefore, applications derived from CA have a tendency to fit very well in the current computational paradigm where sc…
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The dynamical system described herein uses a hybrid cellular automata (CA) mechanism to attain reversibility, and this approach is adapted to create a novel block cipher algorithm called HCA. CA are widely used for modeling complex systems and employ an inherently parallel model. Therefore, applications derived from CA have a tendency to fit very well in the current computational paradigm where scalability and multi-threading potential are quite desirable characteristics. HCA model has recently received a patent by the Brazilian agency INPI. Several evaluations and analyses performed on the model are presented here, such as theoretical discussions related to its reversibility and an analysis based on graph theory, which reduces HCA security to the well-known Hamiltonian cycle problem that belongs to the NP-complete class. Finally, the cryptographic robustness of HCA is empirically evaluated through several tests, including avalanche property compliance and the NIST randomness suite.
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Submitted 8 June, 2021;
originally announced June 2021.
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The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
Authors:
Elcin Külah,
Christian Reichl,
Jan Scharnetzky,
Luca Alt,
Werner Dietsche,
Werner Wegscheider
Abstract:
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may drop to a few millions for the identical but inverted AlGaAs/GaAs interface, i.e. reversed layering. Here we report on a series of inverted heterostructures with va…
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Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may drop to a few millions for the identical but inverted AlGaAs/GaAs interface, i.e. reversed layering. Here we report on a series of inverted heterostructures with varying growth parameters including temperature, doping, and composition. Minimizing the segregation of both dopants and background impurities leads to mobilities of 13 million cm^2/Vs for inverted structures. The dependence of the mobility on electron density tunes by a gate or by illumination is found to be the identical if no doping layers exist between the 2DEG and the respective gate. Otherwise, it differs significantly compared to normal interface structures. Reducing the distance of the 2DEG to the surface down to 50nm requires an additional doping layer between 2DEG and surface in order to compensate for the surface-Schottky barrier. The suitability of such shallow inverted structures for future semiconductor-superconductor hybrid systems is discussed. Lastly, our understanding of the improved inverted interface enables us to produce optimized double-sided doped quantum wells exhibiting an electron mobility of 40 million cm^2/Vs at 1K.
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Submitted 24 June, 2021; v1 submitted 29 March, 2021;
originally announced March 2021.
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Electronic g-factor and Magneto-transport in InSb Quantum Wells
Authors:
Zijin Lei,
Christian A. Lehner,
Km Rubi,
Erik Cheah,
Matija Karalic,
Christopher Mittag,
Luca Alt,
Jan Scharnetzky,
Peter Märki,
Uli Zeitler,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of…
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High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast}\mid $ =35$\pm$4 and a value for the effective mass of $m^*\approx0.017 m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.
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Submitted 10 February, 2020;
originally announced February 2020.
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Quantum transport in high-quality shallow InSb quantum wells
Authors:
Zijin Lei,
Christian A. Lehner,
Erik Cheah,
Matija Karalic,
Christopher Mittag,
Luca Alt,
Jan Scharnetzky,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells clo…
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InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong coupling between superconductors and semiconductors. However, it is still challenging to obtain a high-quality InSb two-dimensional electron gas in quantum wells close to the surface. Here we report on a molecular beam epitaxy grown heterostructure of InSb quantum wells with substrate-side Si-doping and ultra-thin InAlSb (5 nm, 25 nm, and 50 nm) barriers to the surface. We demonstrate that the carrier densities in these quantum wells are gate-tunable and electron mobilities up to 350,000 $\rm{cm^2(Vs)^{-1}}$ are extracted from magneto-transport measurements. Furthermore, from temperature-dependent magneto-resistance measurements, we extract an effective mass of 0.02 $m_0$ and find a Zeeman splitting compatible with the expected g-factor.
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Submitted 25 June, 2019; v1 submitted 1 April, 2019;
originally announced April 2019.
