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Industrially Microfabricated Ion Trap with 1 eV Trap Depth
Authors:
S. Auchter,
C. Axline,
C. Decaroli,
M. Valentini,
L. Purwin,
R. Oswald,
R. Matt,
E. Aschauer,
Y. Colombe,
P. Holz,
T. Monz,
R. Blatt,
P. Schindler,
C. Rössler,
J. Home
Abstract:
Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric 3D structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on…
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Scaling trapped-ion quantum computing will require robust trapping of at least hundreds of ions over long periods, while increasing the complexity and functionality of the trap itself. Symmetric 3D structures enable high trap depth, but microfabrication techniques are generally better suited to planar structures that produce less ideal conditions for trapping. We present an ion trap fabricated on stacked 8-inch wafers in a large-scale MEMS microfabrication process that provides reproducible traps at a large volume. Electrodes are patterned on the surfaces of two opposing wafers bonded to a spacer, forming a 3D structure with 2.5 micrometer standard deviation in alignment across the stack. We implement a design achieving a trap depth of 1 eV for a calcium-40 ion held at 200 micrometers from either electrode plane. We characterize traps, achieving measurement agreement with simulations to within +/-5% for mode frequencies spanning 0.6--3.8 MHz, and evaluate stray electric field across multiple trapping sites. We measure motional heating rates over an extensive range of trap frequencies, and temperatures, observing 40 phonons/s at 1 MHz and 185 K. This fabrication method provides a highly scalable approach for producing a new generation of 3D ion traps.
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Submitted 1 March, 2022; v1 submitted 16 February, 2022;
originally announced February 2022.
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Understanding photoluminescence in semiconductor Bragg-reflection waveguides: Towards an integrated, GHz-rate telecom photon pair source
Authors:
Silke Auchter,
Alexander Schlager,
Hannah Thiel,
Kaisa Laiho,
Benedikt Pressl,
Holger Suchomel,
Martin Kamp,
Sven Höfling,
Christian Schneider,
Gregor Weihs
Abstract:
Compared to traditional nonlinear optical crystals, like BaB$_2$O$_4$, KTiOPO$_4$ or LiNbO$_3$, semiconductor integrated sources of photon pairs may operate at pump wavelengths much closer to the bandgap of the materials. This is also the case for Bragg-reflection waveguides (BRW) targeting parametric down-conversion (PDC) to the telecom C-band. The large nonlinear coefficient of the AlGaAs alloy…
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Compared to traditional nonlinear optical crystals, like BaB$_2$O$_4$, KTiOPO$_4$ or LiNbO$_3$, semiconductor integrated sources of photon pairs may operate at pump wavelengths much closer to the bandgap of the materials. This is also the case for Bragg-reflection waveguides (BRW) targeting parametric down-conversion (PDC) to the telecom C-band. The large nonlinear coefficient of the AlGaAs alloy and the strong confinement of the light enable extremely bright integrated photon pair sources. However, under certain circumstances, a significant amount of detrimental broadband photoluminescence has been observed in BRWs. We show that this is mainly a result of linear absorption near the core and subsequent radiative recombination of electron-hole pairs at deep impurity levels in the semiconductor. For PDC with BRWs, we conclude that devices operating near the long wavelength end of the S-band or the short C-band require temporal filtering shorter than 1 ns. We predict that shifting the operating wavelengths to the L-band and making small adjustments in the material composition will reduce the amount of photoluminescence to negligible values. Such measures enable us to increase the average pump power and/or the repetition rate, which makes integrated photon pair sources with on-chip multi-gigahertz pair rates feasible.
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Submitted 12 October, 2020;
originally announced October 2020.
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Two-dimensional linear trap array for quantum information processing
Authors:
Philip C. Holz,
Silke Auchter,
Gerald Stocker,
Marco Valentini,
Kirill Lakhmanskiy,
Clemens Rössler,
Paul Stampfer,
Sokratis Sgouridis,
Elmar Aschauer,
Yves Colombe,
Rainer Blatt
Abstract:
We present an ion-lattice quantum processor based on a two-dimensional arrangement of linear surface traps. Our design features a tunable coupling between ions in adjacent lattice sites and a configurable ion-lattice connectivity, allowing one, e.g., to realize rectangular and triangular lattices with the same trap chip. We present detailed trap simulations of a simplest-instance ion array with…
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We present an ion-lattice quantum processor based on a two-dimensional arrangement of linear surface traps. Our design features a tunable coupling between ions in adjacent lattice sites and a configurable ion-lattice connectivity, allowing one, e.g., to realize rectangular and triangular lattices with the same trap chip. We present detailed trap simulations of a simplest-instance ion array with $2\times9$ trapping sites and report on the fabrication of a prototype device in an industrial facility. The design and the employed fabrication processes are scalable to larger array sizes. We demonstrate trapping of ions in rectangular and triangular lattices and demonstrate transport of a $2\times2$ ion-lattice over one lattice period.
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Submitted 21 September, 2020; v1 submitted 18 March, 2020;
originally announced March 2020.
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High-concurrence time-bin entangled photon pairs from optimized Bragg-reflection waveguides
Authors:
Huan Chen,
Silke Auchter,
Maximilian Prilmüller,
Alexander Schlager,
Thomas Kauten,
Kaisa Laiho,
Benedikt Pressl,
Holger Suchomel,
Martin Kamp,
Sven Höfling,
Christian Schneider,
Gregor Weihs
Abstract:
Semiconductor Bragg-reflection waveguides are well-established sources of correlated photon pairs as well as promising candidates for building up integrated quantum optics devices. Here, we use such a source with optimized non-linearity for preparing time-bin entangled photons in the telecommunication wavelength range. By taking advantage of pulsed state preparation and efficient free-running sing…
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Semiconductor Bragg-reflection waveguides are well-established sources of correlated photon pairs as well as promising candidates for building up integrated quantum optics devices. Here, we use such a source with optimized non-linearity for preparing time-bin entangled photons in the telecommunication wavelength range. By taking advantage of pulsed state preparation and efficient free-running single-photon detection, we drive our source at low pump powers, which results in a strong photon-pair correlation. The tomographic reconstruction of the state's density matrix reveals that our source exhibits a high degree of entanglement. We extract a concurrence of $88.9\pm 1.8\%$ and a fidelity of $94.2 \pm 0.9\%$ with respect to a Bell state.
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Submitted 30 April, 2018;
originally announced April 2018.
