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Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles
Authors:
Jingxuan Kang,
Rose-Mary Jose,
Miriam Oliva,
Thomas Auzelle,
Mikel Gómez Ruiz,
Abbes Tahraoui,
Jonas Lähnemann,
Oliver Brandt,
Lutz Geelhaar
Abstract:
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon annealing proceeds in good agreement with the void growth model. With increasing annealing duration, the size and shape uniformity of the nanoislands improves. This im…
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The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon annealing proceeds in good agreement with the void growth model. With increasing annealing duration, the size and shape uniformity of the nanoislands improves. This improvement speeds up for higher annealing temperature. After an optimum annealing duration, the size uniformity deteriorates due to the coalescence of neighboring islands. By changing the Pt film thickness, the nanoisland diameter and density can be quantitatively controlled in a way predicted by a simple thermodynamic model. We demonstrate the uniformity of the nanoisland ensembles for an area larger than 1 cm$^2$. GaN nanowires are fabricated by a sequence of dry and wet etching steps, and these nanowires inherit the diameters and density of the Pt nanoisland ensemble used as a mask. Our study achieves advancements in size uniformity and range of obtainable diameters compared to previous works. This simple, economical, and scalable approach to the top-down fabrication of nanowires is useful for applications requiring large and uniform nanowire ensembles with controllable dimensions.
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Submitted 22 February, 2024;
originally announced February 2024.
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AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
Authors:
N. Buatip,
T. Auzelle,
P. John,
S. Rauwerdink,
M. Sohdi,
M. Saluan,
B. Fernandez,
E. Monroy,
D. Mornex,
C. R. Bowen,
R. Songmuang
Abstract:
In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of invest…
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In this study, detailed analysis of the direct piezo-response of AlN nanowire-based vertically integrated nanogenerators (VINGs) is undertaken as a function of mechanical excitation frequency. We show that the piezo-charge, piezo-voltage, and impedance measured at the same position of the devices can be directly correlated through an equivalent circuit model, in the whole frequency range of investigation. Our presented results are utilized to determine the performance figures of merit (FoM) of nanowire-based VINGs, namely the piezoelectric voltage constant (g) for sensing, and the product d g for energy harvesting, where d is the piezoelectric charge constant. By comparison of these metrics with those of freestanding single crystal GaN and quartz substrates, as well as sputtered AlN thin films, we suggest that the nanowires can outperform their rigid counterparts in terms of mechanical sensing and energy generation. This work provides experimental guidelines for understanding the direct piezo-characteristics of VINGs and facilitates a quantitative comparison between nanostructured piezoelectric devices fabricated using different materials or architectures.
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Submitted 1 June, 2024; v1 submitted 15 February, 2024;
originally announced February 2024.
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ScN/GaN($1\bar{1}00$): a new platform for the epitaxy of twin-free metal-semiconductor heterostructures
Authors:
Philipp John,
Achim Trampert,
Duc Van Dinh,
Domenik Spallek,
Jonas Lähnemann,
Vladimir Kaganer,
Lutz Geelhaar,
Oliver Brandt,
Thomas Auzelle
Abstract:
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congrue…
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We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both substrates, ScN crystallizes twin-free thanks to a specific epitaxial relationship, namely ScN(110)[001]$||$GaN($1\bar{1}00$)[0001], providing a congruent, low-symmetry GaN/ScN interface. The 13.1 % uniaxial lattice mismatch occurring in this orientation mostly relaxes within the first few monolayers of growth by forming a coincidence site lattice, where 7 GaN planes coincide with 8 ScN planes, leaving the ScN surface nearly free of extended defects. Overgrowth of the ScN with GaN leads to a kinetic stabilization of the zinc blende phase, that rapidly develops wurtzite inclusions nucleating on {111} nanofacets, commonly observed during zinc blende GaN growth. Our ScN/GaN($1\bar{1}00$) platform opens a new route for the epitaxy of twin-free metal-semiconductor heterostructures made of closely lattice-matched GaN, ScN, HfN and ZrN compounds.
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Submitted 1 February, 2024;
originally announced February 2024.
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Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
Authors:
Philipp John,
Mikel Gómez Ruiz,
Len van Deurzen,
Jonas Lähnemann,
Achim Trampert,
Lutz Geelhaar,
Oliver Brandt,
Thomas Auzelle
Abstract:
We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modelling of…
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We study the molecular beam epitaxy of AlN nanowires between 950 and 1215 °C, well above the usual growth temperatures, to identify optimal growth conditions. The nanowires are grown by self-assembly on TiN(111) films sputtered onto Al$_2$O$_3$. Above 1100 °C, the TiN film is seen to undergo grain growth and its surface exhibits {111} facets where AlN nucleation preferentially occurs. Modelling of the nanowire elongation rate measured at different temperatures shows that the Al adatom diffusion length is maximised at 1150 °C, which appears to be the optimum growth temperature. However, analysis of the nanowire luminescence shows a steep increase in the deep-level signal already above 1050 °C, associated with O incorporation from the Al$_2$O$_3$ substrate. Comparison with AlN nanowires grown on Si, MgO and SiC substrates suggests that heavy doping of Si and O by interdiffusion from the TiN/substrate interface increases the nanowire internal quantum efficiency, presumably due to the formation of a SiN$_x$ or AlO$_x$ passivation shell. The outdiffusion of Si and O would also cause the formation of the inversion domains observed in the nanowires. It follows that for optoelectronic and piezoelectric applications, optimal AlN nanowire ensembles should be prepared at 1150 °C on TiN/SiC substrates and will require an ex situ surface passivation.
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Submitted 1 February, 2024; v1 submitted 15 June, 2023;
originally announced June 2023.
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Density control of GaN nanowires at the wafer scale using self-assembled SiN$_x$ patches on sputtered TiN(111)
Authors:
Thomas Auzelle,
Miriam Oliva,
Philipp John,
Manfred Ramsteiner,
Lutz Geelhaar,
Oliver Brandt
Abstract:
The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $μ$m$^{-2}$) or ultralow ($<1$ $μ$m$^{-2}$) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we e…
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The self-assembly of heteroepitaxial GaN nanowires using either molecular beam epitaxy (MBE) or metal-organic vapor phase epitaxy (MOVPE) mostly results in wafer-scale ensembles with ultrahigh ($>10$ $μ$m$^{-2}$) or ultralow ($<1$ $μ$m$^{-2}$) densities, respectively. A simple means to tune the density of well-developed nanowire ensembles between these two extremes is generally lacking. Here, we examine the self-assembly of SiN$_x$ patches on TiN(111) substrates which are eventually acting as seeds for the growth of GaN nanowires. We first found that if prepared by reactive sputtering, the TiN surface is characterized by \{100\} facets for which the GaN incubation time is extremely long. Fast GaN nucleation is only obtained after deposition of a sub-monolayer of SiN$_x$ atoms prior to the GaN growth. By varying the amount of pre-deposited SiN$_x$, the GaN nanowire density could be tuned by three orders of magnitude with excellent uniformity over the entire wafer, bridging the density regimes conventionally attainable by direct self-assembly with MBE or MOVPE. The analysis of the nanowire morphology agrees with a nucleation of the GaN nanowires on nanometric SiN$_x$ patches. The photoluminescence analysis of single freestanding GaN nanowires reveals a band edge luminescence dominated by excitonic transitions that are broad and blue shifted compared to bulk GaN, an effect that is related to the small nanowire diameter and to the presence of a thick native oxide. The approach developed here can be principally used for tuning the density of most III-V semiconductors nucleus grown on inert surfaces like 2D materials.
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Submitted 8 August, 2023; v1 submitted 11 November, 2022;
originally announced November 2022.
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A route for the top-down fabrication of ordered ultrathin GaN nanowires
Authors:
Miriam Oliva,
Vladimir Kaganer,
Maximilian Pudelski,
Sebastian Meister,
Abbes Tahraoui,
Lutz Geelhaar,
Oliver Brandt,
Thomas Auzelle
Abstract:
Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios exceeding $10$ and diameters below $20\,$nm. Highly uniform thin GaN NWs are first obtained by using electron beam lithography to pattern a Ni/SiN$_x$ hard mask, f…
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Ultrathin GaN nanowires (NWs) are attractive to maximize surface effects and as building block in high-frequency transistors. Here, we introduce a facile route for the top-down fabrication of ordered arrays of GaN NWs with aspect ratios exceeding $10$ and diameters below $20\,$nm. Highly uniform thin GaN NWs are first obtained by using electron beam lithography to pattern a Ni/SiN$_x$ hard mask, followed by dry etching and wet etching in hot KOH. The SiN$_x$ is found to work as an etch stop during wet etching in hot KOH. Arrays with NW diameters down to $(33 \pm5)\,$nm can be achieved with a yield exceeding $99.9\,\%$. Further reduction of the NW diameter down to $5\,$nm is obtained by applying digital etching which consists in plasma oxidation followed by wet etching in hot KOH. The NW radial etching depth is tuned by varying the RF power during plasma oxidation. NW breaking or bundling is observed for diameters below $\approx 20\,$nm, an effect that is associated to capillary forces acting on the NWs during sample drying in air. This effect can be principally mitigated using critical point dryers. Interestingly, this mechanical instability of the NWs is found to occur at much smaller aspect ratios than what is predicted for models dealing with macroscopic elastic rods. Explicit calculations of buckling states show an improved agreement when considering an inclined water surface, as can be expected if water assembles into droplets. The proposed fabrication route can be principally applied to any GaN/SiN$_{x}$ nanostructures and allows regrowth after removal of the SiN$_{x}$ mask.
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Submitted 6 November, 2022;
originally announced November 2022.
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Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy
Authors:
Thomas Auzelle,
Chiara Sinito,
Jonas Lähnemann,
Guanhui Gao,
Timur Flissikowski,
Achim Trampert,
Sergio Fernández-Garrido,
Oliver Brandt
Abstract:
We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and GaN$(000\bar{1})$ substrates. Samples of different polarity are found to be comparable in terms of their morphological and structural perfection and exhibit essentially ident…
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We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) on freestanding GaN$(0001)$ and GaN$(000\bar{1})$ substrates. Samples of different polarity are found to be comparable in terms of their morphological and structural perfection and exhibit essentially identical quantum well widths and Al content. Regardless of the crystal orientation, the exciton decay in the MQWs at 10 K is dominantly radiative and the photoluminescence (PL) energy follows the quantum confined Stark effect (QCSE) for different quantum well widths. A prominent free-to-bound transition involving interface shallow donors is, however, visible for the N-polar MQWs. At room-temperature, in contrast, the exciton decay in all samples is dominated by nonradiative recombination taking place at point defects, presumably Ca or V N located at the bottom QW interface. Remarkably, the N-polar MQWs exhibit a higher PL intensity and longer decay times than the Ga-polar MQWs at room-temperature. This improved internal quantum efficiency is attributed to the beneficial orientation of the internal electric field that effectively reduces the capture rate of minority carriers by interface trap states.
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Submitted 13 May, 2022; v1 submitted 25 November, 2021;
originally announced November 2021.
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External control of GaN band bending using phosphonate self-assembled monolayers
Authors:
T. Auzelle,
F. Ullrich,
S. Hietzschold,
C. Sinito,
S. Brackmann,
W. Kowalsky,
E. Mankel,
O. Brandt,
R. Lovrincic,
S. Fernández-Garrido
Abstract:
We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN…
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We report on the optoelectronic properties of GaN$(0001)$ and $(1\bar{1}00)$ surfaces after their functionalization with phosphonic acid derivatives. To analyze the possible correlation between the acid's electronegativity and the GaN surface band bending, two types of phosphonic acids, n-octylphosphonic acid (OPA) and 1H,1H,2H,2H-perfluorooctanephosphonic acid (PFOPA), are grafted on oxidized GaN$(0001)$ and GaN$(1\bar{1}00)$ layers as well as on GaN nanowires. The resulting hybrid inorganic/organic heterostructures are investigated by X-ray photoemission and photoluminescence spectroscopy. The GaN work function is changed significantly by the grafting of phosphonic acids, evidencing the formation of dense self-assembled monolayers. Regardless of the GaN surface orientation, both types of phosphonic acids significantly impact the GaN surface band bending. A dependence on the acids' electronegativity is, however, only observed for the oxidized GaN$(1\bar{1}00)$ surface, indicating a relatively low density of surface states and a favorable band alignment between the surface oxide and acids' electronic states. Regarding the optical properties, the covalent bonding of PFOPA and OPA on oxidized GaN layers and nanowires significantly affect their external quantum efficiency, especially in the nanowire case due to the large surface-to-volume ratio. The variation in the external quantum efficiency is related to the modication of both the internal electric fields and surface states. These results demonstrate the potential of phosphonate chemistry for the surface functionalization of GaN, which could be exploited for selective sensing applications.
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Submitted 25 September, 2020;
originally announced September 2020.
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Enhanced radiative efficiency in GaN nanowires grown on sputtered TiN$_{\boldsymbol{x}}$: effects of surface electric fields
Authors:
T. Auzelle,
M. Azadmand,
T. Flissikowski,
M. Ramsteiner,
K. Morgenroth,
C. Stemmler,
S. Fernández-Garrido,
S. Sanguinetti,
H. T. Grahn,
L. Geelhaar,
O. Brandt
Abstract:
GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times a…
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GaN nanowires grown by molecular beam epitaxy generally suffer from dominant nonradiative recombination, which is believed to originate from point defects. To suppress the formation of these defects, we explore the synthesis of GaN nanowires at temperatures up to 915 $°C$ enabled by the use of thermally stable TiN$_x$/Al$_2$O$_3$ substrates. These samples exhibit indeed bound exciton decay times approaching those measured for state-of-the-art bulk GaN. However, the decay time is not correlated with the growth temperature, but rather with the nanowire diameter. The inverse dependence of the decay time on diameter suggests that the nonradiative process in GaN nanowires is not controlled by the defect density, but by the field ionization of excitons in the radial electric field caused by surface band bending. We propose a unified mechanism accounting for nonradiative recombination in GaN nanowires of arbitrary diameter.
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Submitted 4 February, 2021; v1 submitted 17 January, 2020;
originally announced January 2020.
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Self-assembly of well-separated AlN nanowires directly on sputtered metallic TiN films
Authors:
Mani Azadmand,
Tomas Auzelle,
Jonas Lähnemann,
Guanhui Gao,
Lars Nicolai,
Manfred Ramsteiner,
Achim Trampert,
Stefano Sanguinetti,
Oliver Brandt,
Lutz Geelhaar
Abstract:
We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the subst…
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We demonstrate the self-assembled formation of AlN nanowires by molecular beam epitaxy on sputtered TiN films on sapphire. This choice of substrate allows growth at an exceptionally high temperature of 1180 °C. In contrast to previous reports, the nanowires are well separated and do not suffer from pronounced coalescence. This achievement is explained by sufficient Al adatom diffusion on the substrate and the nanowire sidewalls. The high crystalline quality of the nanowires is evidenced by the observation of near band edge emission in the cathodoluminescence spectrum. The key factor for the low nanowire coalescence is the TiN film, which spectroscopic ellipsometry and Raman spectroscopy indicate to be stoichiometric. Its metallic nature will be beneficial for optoelectronic devices employing these nanowires as the basis for (Al,Ga)N/AlN heterostructures emitting in the deep ultraviolet spectral range.
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Submitted 16 October, 2019;
originally announced October 2019.
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Toward Quantitative Measurements of Piezoelectricity in III-N Semiconductors Nanowires
Authors:
L. Jaloustre,
S. Le-Denmat,
T. Auzelle,
M. Azadmand,
L. Geelhaar,
F. Dahlem,
R. Songmuang
Abstract:
Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics, demanding well-clarification of their piezoelectric behavior. Despite the feasibility of piezoresponse force microscopy (PFM) to resolve piezo-responses at the nanoscale, several difficulties arise when the measurement…
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Piezoelectric semiconductor III-Nitride nanostructures have received increasing interest as an alternative material for energy harvesters, sensors, and self-sustainable electronics, demanding well-clarification of their piezoelectric behavior. Despite the feasibility of piezoresponse force microscopy (PFM) to resolve piezo-responses at the nanoscale, several difficulties arise when the measurements are performed on low piezo-coefficient materials due to various artifacts. This work shows that semi-quantitative PFM on low piezo-coefficient III-Nitrides can be achieved in high-aspect-ratio nanostructures such as nanowires or nanorods. For conventional bulks and thin films, accurate determination of their piezoresponses is limited because of clamping and bending effects which can occur simultaneously during PFM measurements. While the clamping effect only reduces the piezoresponse amplitude, the bending motion either increases or decreases this amplitude and can also rotate the phase by 180°. Improved electric field distribution in nanowires minimizes both artifacts, allowing correct determinations of crystal polarities and piezo-coefficients. In contrast to the reports in the literature, we do not observe giant piezoelectricity in III-N nanowires with a diameter in the range of 30-80 nm. This work provides an access to fundamental parameters for developing III-N based piezoelectric nano-devices.
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Submitted 7 December, 2020; v1 submitted 2 October, 2019;
originally announced October 2019.
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Electronic properties of air-exposed GaN$(1\bar{1}00)$ and $(0001)$ surfaces after several device processing compatible cleaning steps
Authors:
Thomas Auzelle,
Florian Ullrich,
Sebastian Hietzschold,
Stefan Brackmann,
Sabina Hillebrandt,
Wolfgang Kowalsky,
Eric Mankel,
Robert Lovrincic,
Sergio Fernández-Garrido
Abstract:
We report on the electronic properties of GaN$(1\bar{1}00)$ and $(0001)$ surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, annealing at $400$ $^\circ$C in N$_2$ atmosphere, and O$_2$ plasma exposure. The surface electronic properties are quantified, in the dark and under ultraviolet illumination, using X-ray photoelectron spectroscopy and a Kel…
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We report on the electronic properties of GaN$(1\bar{1}00)$ and $(0001)$ surfaces after three different and subsequent device processing compatible cleaning steps: HCl etching, annealing at $400$ $^\circ$C in N$_2$ atmosphere, and O$_2$ plasma exposure. The surface electronic properties are quantified, in the dark and under ultraviolet illumination, using X-ray photoelectron spectroscopy and a Kelvin probe. We find that the cleaning steps largely affect the work function and the band bending of both GaN orientations. These modifications are attributed to the presence of different surface states as well as to the formation of adsorbates building up distinct surface dipoles. Besides these results, we detect that under ultraviolet illumination the work function of the surfaces exposed to HCl decreases by at least $0.2$ eV without screening of the band bending. We thus attribute the observed surface photovoltage to a photo-induced modification of the surface dipole. Overall, these results emphasize the strong dependence of the electronic properties of air-exposed GaN surfaces on adsorbates. As a result, we advocate the use of the common cleaning steps analyzed here to re-initialize at will GaN$(1\bar{1}00)$ and $(0001)$ surfaces into pre-defined states.
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Submitted 9 August, 2019;
originally announced August 2019.
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Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation
Authors:
Sergio Fernández-Garrido,
Thomas Auzelle,
Jonas Lähnemann,
Kilian Wimmer,
Abbes Tahraoui,
Oliver Brandt
Abstract:
We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 $μ$m, respectively, are simultaneously produced under identical conditions. The sublimation process, carried out under h…
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We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation of pre-patterned GaN(0001) layers grown by hydride vapor phase epitaxy on Al$_{2}$O$_{3}$. Arrays with nanowire diameters and spacings ranging from 50 to 90 nm and 0.1 to 0.7 $μ$m, respectively, are simultaneously produced under identical conditions. The sublimation process, carried out under high vacuum conditions, is analyzed \emph{in situ} by reflection high-energy electron diffraction and line-of-sight quadrupole mass spectromety. During the sublimation process, the GaN(0001) surface vanishes, giving way to the formation of semi-polar $\lbrace1\bar{1}03\rbrace$ facets which decompose congruently following an Arrhenius temperature dependence with an activation energy of ($3.54 \pm 0.07$) eV and an exponential prefactor of $1.58\times10^{31}$ atoms cm$^{-2}$ s$^{-1}$. The analysis of the samples by low-temperature cathodoluminescence spectroscopy reveals that, in contrast to dry etching, the sublimation process does not introduce nonradiative recombination centers at the nanowire sidewalls. This technique is suitable for the top-down fabrication of a variety of ordered nanostructures, and could possibly be extended to other material systems with similar crystallographic properties such as ZnO.
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Submitted 13 May, 2019;
originally announced May 2019.
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Absence of quantum-confined Stark effect in GaN quantum disks embedded in (Al,Ga)N nanowires grown by molecular beam epitaxy
Authors:
C. Sinito,
P. Corfdir,
C. Pfüller,
G. Gao,
J. Bartolomé Vílchez,
S. Kölling,
A. Rodil Doblado,
U. Jahn,
J. Lähnemann,
T. Auzelle,
J. K. Zettler,
T. Flissikowski,
P. Koenraad,
H. T. Grahn,
L. Geelhaar,
S. Fernández-Garrido,
O. Brandt
Abstract:
Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN qua…
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Several of the key issues of planar (Al,Ga)N-based deep-ultraviolet light emitting diodes could potentially be overcome by utilizing nanowire heterostructures, exhibiting high structural perfection and improved light extraction. Here, we study the spontaneous emission of GaN/(Al,Ga)N nanowire ensembles grown on Si(111) by plasma-assisted molecular beam epitaxy. The nanowires contain single GaN quantum disks embedded in long (Al,Ga)N nanowire segments essential for efficient light extraction. These quantum disks are found to exhibit intense emission at unexpectedly high energies, namely, significantly above the GaN bandgap, and almost independent of the disk thickness. An in-depth investigation of the actual structure and composition of the nanowires reveals a spontaneously formed Al gradient both along and across the nanowire, resulting in a complex core/shell structure with an Al deficient core and an Al rich shell with continuously varying Al content along the entire length of the (Al,Ga)N segment. This compositional change along the nanowire growth axis induces a polarization doping of the shell that results in a degenerate electron gas in the disk, thus screening the built-in electric fields. The high carrier density not only results in the unexpectedly high transition energies, but also in radiative lifetimes depending only weakly on temperature, leading to a comparatively high internal quantum efficiency of the GaN quantum disks up to room temperature.
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Submitted 8 August, 2019; v1 submitted 10 May, 2019;
originally announced May 2019.
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Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires
Authors:
Gilles Nogues,
Thomas Auzelle,
Martien Den Hertog,
Bruno Gayral,
Bruno Daudin
Abstract:
We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking…
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We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.
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Submitted 16 March, 2014;
originally announced March 2014.
