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Quantum Hall effect in InAsSb quantum wells at elevated temperatures
Authors:
M. E. Bal,
E. Cheah,
Z. Lei,
R. Schott,
C. A. Lehner,
H. Engelkamp,
W. Wegscheider,
U. Zeitler
Abstract:
We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of $m^{\ast} \approx$ 0.022$m_{e}$, which is lower than in the investigated InSb…
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We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent Shubnikov-de Haas experiments as well as FIR transmission we find an effective mass of $m^{\ast} \approx$ 0.022$m_{e}$, which is lower than in the investigated InSb quantum well, but due to a rather strong confinement still higher than in the corresponding bulk compound. The effective $g$-factor was determined to be $g^{\ast} \approx$ 21.9. These results are also corroborated by $k \cdot p$ band structure calculations. When spin polarizing the electrons in a tilted magnetic field, the $g$-factor is significantly enhanced by electron-electron interactions, reaching a value as large as $g^{\ast}$ = 60 at a spin polarization P = 0.75. Finally, we show that due to the low effective mass the quantum Hall effect in our particular sample can be observed up to a temperature of 60 K and we propose scenarios how to increase this temperature even further.
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Submitted 15 December, 2023;
originally announced December 2023.
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Disentangling electrical switching of antiferromagnetic NiO using high magnetic fields
Authors:
Casper Floris Schippers,
Michał J. Grzybowski,
Km Rubi,
Maurice E. Bal,
Thomas J. Kools,
Rembert A. Duine,
Uli Zeitler,
Henk J. M. Swagten
Abstract:
Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by non-magnetic effects that are very difficult to distinguish from the actual magnetic ones. Here, we study the electrical switching of thin (5 nm) NiO films in Pt/NiO devices using magnetic fields up to 15 T to quantitat…
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Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by non-magnetic effects that are very difficult to distinguish from the actual magnetic ones. Here, we study the electrical switching of thin (5 nm) NiO films in Pt/NiO devices using magnetic fields up to 15 T to quantitatively disentangle these magnetic and non-magnetic effects. We demonstrate that these fields suppress the magnetic components of the electrical switching of NiO, but leave the non-magnetic components intact. Using a monodomainization model the contributions are separated, showing how they behave as a function of the current density. These results show that combining electrical methods and strong magnetic fields can be an invaluable tool for AF spintronics, allowing for implementing and studying electrical switching of AFs in more complex systems.
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Submitted 27 October, 2022; v1 submitted 12 April, 2022;
originally announced April 2022.
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High-quality Two-Dimensional Electron Gas in Undoped InSb Quantum Wells
Authors:
Zijin Lei,
Erik Cheah,
Km Rubi,
Maurice E. Bal,
Christoph Adam,
Rüdiger Schott,
Uli Zeitler,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit intera…
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We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly increased mobility of 260,000 cm$^2$/Vs at a rather low density of $2.4\times10^{11}$ cm$^{-2}$. Using magneto-transport experiments, we characterize spin-orbit interactions by measuring weak antilocalization. Furthermore, by measuring Shubnikov-de Haas oscillations in tilted magnetic fields, we find that the g-factor agrees with $k \cdot p$ theory calculations at low magnetic fields but grows with spin polarization and carrier density at high magnetic fields. Additionally, signatures of Ising quantum Hall ferromagnetism are found at filling factor $ν$ = 2 for tilt angles where the Landau level energy equals the Zeeman energy. Despite the high mobility, the undoped InSb quantum wells exhibit no fractional quantum Hall effect up to magnetic fields of 25 T.
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Submitted 21 October, 2021;
originally announced October 2021.
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Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature
Authors:
M. J. Grzybowski,
C. F. Schippers,
M. E. Bal,
K. Rubi,
U. Zeitler,
M. Foltyn,
B. Koopmans,
H. J. M. Swagten
Abstract:
One of the most important challenges in antiferromagnetic spintronics is the read-out of the Néel vector state. High current densities up to 10$^8$ Acm$^{-2}$ used in the electrical switching experiments cause notorious difficulty in distinguishing between magnetic and thermal origins of the electrical signals. To overcome this problem, we present a temperature dependence study of the transverse r…
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One of the most important challenges in antiferromagnetic spintronics is the read-out of the Néel vector state. High current densities up to 10$^8$ Acm$^{-2}$ used in the electrical switching experiments cause notorious difficulty in distinguishing between magnetic and thermal origins of the electrical signals. To overcome this problem, we present a temperature dependence study of the transverse resistance changes in the switching experiment with CoO|Pt devices. We demonstrate the possibility to extract a pattern of spin Hall magnetoresistance for current pulses density of $5 \times 10^7$ Acm$^{-2}$ that is present only below the Néel temperature and does not follow a trend expected for thermal effects. This is the compelling evidence for the magnetic origin of the signal, which is observed using purely electrical techniques. We confirm these findings by complementary experiments in an external magnetic field. Such an approach can allow determining the optimal conditions for switching antiferromagnets and be very valuable when no imaging techniques can be applied to verify the origin of the electrical signal.
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Submitted 4 March, 2022; v1 submitted 1 September, 2021;
originally announced September 2021.
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Antiferromagnetic Hysteresis above the Spin Flop Field
Authors:
M. J. Grzybowski,
C. F. Schippers,
O. Gomonay,
K. Rubi,
M. E. Bal,
U. Zeitler,
A. Kozioł-Rachwał,
M. Szpytma,
W. Janus,
B. Kurowska,
S. Kret,
M. Gryglas-Borysiewicz,
B. Koopmans,
H. J. M. Swagten
Abstract:
Magnetocrystalline anisotropy is essential in the physics of antiferromagnets and commonly treated as a constant, not depending on an external magnetic field. However, we demonstrate that in CoO the anisotropy should necessarily depend on the magnetic field, which is shown by the spin Hall magnetoresistance of the CoO $|$ Pt device. Below the Néel temperature CoO reveals a spin-flop transition at…
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Magnetocrystalline anisotropy is essential in the physics of antiferromagnets and commonly treated as a constant, not depending on an external magnetic field. However, we demonstrate that in CoO the anisotropy should necessarily depend on the magnetic field, which is shown by the spin Hall magnetoresistance of the CoO $|$ Pt device. Below the Néel temperature CoO reveals a spin-flop transition at 240 K at 7.0 T, above which a hysteresis in the angular dependence of magnetoresistance unexpectedly persists up to 30 T. This behavior is shown to agree with the presence of the unquenched orbital momentum, which can play an important role in antiferromagnetic spintronics.
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Submitted 21 November, 2022; v1 submitted 31 August, 2021;
originally announced September 2021.
