Spatially Resolved Thermoelectric Effects in Operando Semiconductor-Metal Nanowire Heterostructures
Authors:
Nadine Gächter,
Fabian Könemann,
Masiar Sistani,
Maximilian G. Bartmann,
Marilyne Sousa,
Philipp Staudinger,
Alois Lugstein,
Bernd Gotsmann
Abstract:
The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al$_2$O$_3$ shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical cu…
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The thermoelectric properties of a nanoscale germanium segment connected by aluminium nanowires are studied using scanning thermal microscopy. The germanium segment of 168\,nm length features atomically sharp interfaces to the aluminium wires and is surrounded by an Al$_2$O$_3$ shell. The temperature distribution along the self-heated nanowire is measured as a function of the applied electrical current, for both Joule and Peltier effects. An analysis is developed that is able to extract the thermal and thermoelectric properties including thermal conductivity, the thermal boundary resistance to the substrate and the Peltier coefficient from a single measurement. Our investigations demonstrate the potential of quantitative measurements of temperature around self-heated devices and structures down to the scattering length of heat carriers.
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Submitted 28 June, 2020;
originally announced June 2020.
Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions
Authors:
Masiar Sistani,
Maximilian G. Bartmann,
Nicholas A. Güsken,
Rupert F. Oulton,
Hamid Keshmiri,
Minh Anh Luong,
Zahra Sadre-Momtaz,
Martien I. den Hertog,
Alois Lugstein
Abstract:
Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultra-scaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photo-catalysis and photo-detection. However, a detailed understanding of plasmonic hot carrier generation and particularl…
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Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultra-scaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photo-catalysis and photo-detection. However, a detailed understanding of plasmonic hot carrier generation and particularly the transfer at metal-semiconductor interfaces is still elusive. In this paper, we introduce a monolithic metal-semiconductor (Al-Ge) heterostructure device, providing a platform to examine surface plasmon decay and hot electron transfer at an atomically sharp Schottky nanojunction. The gated metal-semiconductor heterojunction device features electrostatic control of the Schottky barrier height at the Al-Ge interface, enabling hot electron filtering. The ability of momentum matching and to control the energy distribution of plasmon-driven hot electron injection is demonstrated by controlling the interband electron transfer in Ge leading to negative differential resistance.
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Submitted 15 June, 2020;
originally announced June 2020.
