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Rare Isotope-Containing Diamond Color Centers for Fundamental Symmetry Tests
Authors:
Ian M. Morris,
Kai Klink,
Jaideep T. Singh,
Jose L. Mendoza-Cortes,
Shannon S. Nicley,
Jonas N. Becker
Abstract:
Detecting a non-zero electric dipole moment (EDM) in a particle would unambiguously signify physics beyond the Standard Model. A potential pathway towards this is the detection of a nuclear Schiff moment, the magnitude of which is enhanced by the presence of nuclear octupole deformation. However, due to the low production rate of isotopes featuring such "pear-shaped" nuclei, capturing, detecting,…
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Detecting a non-zero electric dipole moment (EDM) in a particle would unambiguously signify physics beyond the Standard Model. A potential pathway towards this is the detection of a nuclear Schiff moment, the magnitude of which is enhanced by the presence of nuclear octupole deformation. However, due to the low production rate of isotopes featuring such "pear-shaped" nuclei, capturing, detecting, and manipulating them efficiently is a crucial prerequisite. Incorporating them into synthetic diamond optical crystals can produce defects with defined, molecule-like structures and isolated electronic states within the diamond band gap, increasing capture efficiency, enabling repeated probing of even a single atom, and producing narrow optical linewidths. In this study, we used density functional theory (DFT) to investigate the formation, structure, and electronic properties of crystal defects in diamond containing $^{229}$Pa, a rare isotope that is predicted to have an exceptionally strong nuclear octupole deformation. In addition, we identified and studied stable lanthanide-containing defects with similar electronic structures as non-radioactive proxies to aid in experimental methods. Our findings hold promise for the existence of such defects and can contribute to the development of a quantum information processing-inspired toolbox of techniques for studying rare isotopes.
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Submitted 9 May, 2023;
originally announced May 2023.
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Transition metal ion ensembles in crystals as solid-state coherent spin-photon interfaces: The case of nickel in magnesium oxide
Authors:
E. Poem,
S. Gupta,
I. Morris,
K. Klink,
L. Singh,
T. Zhong,
J. N. Becker,
O. Firstenberg
Abstract:
We present general guidelines for finding solid-state systems that could serve as coherent electron spin-photon interfaces even at relatively high temperatures, where phonons are abundant but cooling is easier, and show that transition metal ions in various crystals could comply with these guidelines. As an illustrative example, we focus on divalent nickel ions in magnesium oxide. We perform elect…
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We present general guidelines for finding solid-state systems that could serve as coherent electron spin-photon interfaces even at relatively high temperatures, where phonons are abundant but cooling is easier, and show that transition metal ions in various crystals could comply with these guidelines. As an illustrative example, we focus on divalent nickel ions in magnesium oxide. We perform electron spin resonance spectroscopy and polarization-sensitive magneto-optical fluorescence spectroscopy of a dense ensemble of these ions and find that (i) the ground-state electron spin stays coherent at liquid-helium temperatures for several microseconds, and (ii) there exists energetically well-isolated excited states which can couple to two ground state spin sub-levels via optical transitions of orthogonal polarizations. The latter implies that fast, coherent optical control over the electron spin is possible. We then propose schemes for optical initialization and control of the ground-state electron spin using polarized optical pulses, as well as two schemes for implementing a noise-free, broadband quantum-optical memory at near-telecom wavelengths in this material system.
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Submitted 22 August, 2023; v1 submitted 30 December, 2022;
originally announced December 2022.
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Gigahertz-Bandwidth Optical Memory in Pr$^{3+}$:Y$_2$SiO$_5$
Authors:
M. Nicolle,
J. N. Becker,
C. Weinzetl,
I. A. Walmsley,
P. M. Ledingham
Abstract:
We experimentally study a broadband implementation of the atomic frequency comb (AFC) rephasing protocol with a cryogenically cooled Pr$^{3+}$:Y$_2$SiO$_5$ crystal. To allow for storage of broadband pulses, we explore a novel regime where the input photonic bandwidth closely matches the inhomogeneous broadening of the material $(\sim5\,\textrm{GHz})$, thereby significantly exceeding the hyperfine…
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We experimentally study a broadband implementation of the atomic frequency comb (AFC) rephasing protocol with a cryogenically cooled Pr$^{3+}$:Y$_2$SiO$_5$ crystal. To allow for storage of broadband pulses, we explore a novel regime where the input photonic bandwidth closely matches the inhomogeneous broadening of the material $(\sim5\,\textrm{GHz})$, thereby significantly exceeding the hyperfine ground and excited state splitting $(\sim10\,\textrm{MHz})$. Through an investigation of different AFC preparation parameters, we measure a maximum efficiency of $10\%$ after a rephasing time of $12.5\,$ns. With a suboptimal AFC, we witness up to 12 rephased temporal modes.
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Submitted 25 February, 2021;
originally announced February 2021.
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Transform-limited photons from a coherent tin-vacancy spin in diamond
Authors:
Matthew E. Trusheim,
Benjamin Pingault,
Noel H Wan,
Mustafa Gundogan,
Lorenzo De Santis,
Romain Debroux,
Dorian Gangloff,
Carola Purser,
Kevin C. Chen,
Michael Walsh,
Joshua J. Rose,
Jonas N. Becker,
Benjamin Lienhard,
Eric Bersin,
Ioannis Paradeisanos,
Gang Wang,
Dominika Lyzwa,
Alejandro R-P. Montblanch,
Girish Malladi,
Hassaram Bakhru,
Andrea C. Ferrari,
Ian Walmsley,
Mete Atature,
Dirk Englund
Abstract:
Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving an…
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Solid-state quantum emitters that couple coherent optical transitions to long-lived spin qubits are essential for quantum networks. Here we report on the spin and optical properties of individual tin-vacancy (SnV) centers in diamond nanostructures. Through cryogenic magneto-optical and spin spectroscopy, we verify the inversion-symmetric electronic structure of the SnV, identify spin-conserving and spin-flipping transitions, characterize transition linewidths, measure electron spin lifetimes and evaluate the spin dephasing time. We find that the optical transitions are consistent with the radiative lifetime limit even in nanofabricated structures. The spin lifetime is phononlimited with an exponential temperature scaling leading to $T_1$ $>$ 10 ms, and the coherence time, $T_2$ reaches the nuclear spin-bath limit upon cooling to 2.9 K. These spin properties exceed those of other inversion-symmetric color centers for which similar values require millikelvin temperatures. With a combination of coherent optical transitions and long spin coherence without dilution refrigeration, the SnV is a promising candidate for feasable and scalable quantum networking applications.
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Submitted 6 January, 2020; v1 submitted 19 November, 2018;
originally announced November 2018.
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Coherent control and wave mixing in an ensemble of silicon vacancy centers in diamond
Authors:
Christian Weinzetl,
Johannes Görlitz,
Jonas Nils Becker,
Ian Alexander Walmsley,
Eilon Poem,
Joshua Nunn,
Christoph Becher
Abstract:
Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of fabrication of components. Silicon vacancy centers (SiV) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. He…
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Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of fabrication of components. Silicon vacancy centers (SiV) in diamond feature especially narrow inhomogeneous spectral lines, which are rare in solid materials. Here, we demonstrate resonant coherent manipulation, stimulated Raman adiabatic passage, and strong light-matter interaction via four-wave mixing of a weak signal field in an ensemble of SiV centers.
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Submitted 30 May, 2018;
originally announced May 2018.
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A two-way photonic interface for linking Sr+ transition at 422 nm to the telecommunications C-band
Authors:
Thomas A. Wright,
Robert J. A. Francis-Jones,
Corin B. E. Gawith,
Jonas N. Becker,
Patrick M. Ledingham,
Peter G. R. Smith,
Joshua Nunn,
Peter J. Mosley,
Benjamin Brecht,
Ian A. Walmsley
Abstract:
We report a single-stage bi-directional interface capable of linking Sr+ trapped ion qubits in a long-distance quantum network. Our interface converts photons between the Sr+ emission wavelength at 422 nm and the telecoms C-band to enable low-loss transmission over optical fiber. We have achieved both up- and down-conversion at the single photon level with efficiencies of 9.4% and 1.1% respectivel…
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We report a single-stage bi-directional interface capable of linking Sr+ trapped ion qubits in a long-distance quantum network. Our interface converts photons between the Sr+ emission wavelength at 422 nm and the telecoms C-band to enable low-loss transmission over optical fiber. We have achieved both up- and down-conversion at the single photon level with efficiencies of 9.4% and 1.1% respectively. Furthermore we demonstrate noise levels that are low enough to allow for genuine quantum operation in the future.
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Submitted 15 October, 2018; v1 submitted 22 February, 2018;
originally announced February 2018.
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Experimental demonstration of quantum effects in the operation of microscopic heat engines
Authors:
James Klatzow,
Jonas N. Becker,
Patrick M. Ledingham,
Christian Weinzetl,
Krzysztof T. Kaczmarek,
Dylan J. Saunders,
Joshua Nunn,
Ian A. Walmsley,
Raam Uzdin,
Eilon Poem
Abstract:
The heat engine, a machine that extracts useful work from thermal sources, is one of the basic theoretical constructs and fundamental applications of classical thermodynamics. The classical description of a heat engine does not include coherence in its microscopic degrees of freedom. By contrast, a quantum heat engine might possess coherence between its internal states. Although the Carnot efficie…
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The heat engine, a machine that extracts useful work from thermal sources, is one of the basic theoretical constructs and fundamental applications of classical thermodynamics. The classical description of a heat engine does not include coherence in its microscopic degrees of freedom. By contrast, a quantum heat engine might possess coherence between its internal states. Although the Carnot efficiency cannot be surpassed, and coherence can be performance degrading in certain conditions, it was recently predicted that even when using only thermal resources, internal coherence can enable a quantum heat engine to produce more power than any classical heat engine using the same resources. Such a power boost therefore constitutes a quantum thermodynamic signature. It has also been shown that the presence of coherence results in the thermodynamic equivalence of different quantum heat engine types, an effect with no classical counterpart. Microscopic heat machines have been recently implemented with trapped ions, and proposals for heat machines using superconducting circuits and optomechanics have been made. When operated with standard thermal baths, however, the machines implemented so far have not demonstrated any inherently quantum feature in their thermodynamic quantities. Here we implement two types of quantum heat engines by use of an ensemble of nitrogen-vacancy centres in diamond, and experimentally demonstrate both the coherence power boost and the equivalence of different heat-engine types. This constitutes the first observation of quantum thermodynamic signatures in heat machines.
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Submitted 5 January, 2018; v1 submitted 24 October, 2017;
originally announced October 2017.
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Coherence properties and quantum control of silicon vacancy color centers in diamond
Authors:
Jonas Nils Becker,
Christoph Becher
Abstract:
Atomic-scale impurity spins, also called color centers, in an otherwise spin-free diamond host lattice have proven to be versatile tools for applications in solid-state-based quantum technologies ranging from quantum information processing (QIP) to quantum-enhanced sensing and metrology. Due to its wide band gap, diamond can host hundreds of different color centers. However, their suitability for…
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Atomic-scale impurity spins, also called color centers, in an otherwise spin-free diamond host lattice have proven to be versatile tools for applications in solid-state-based quantum technologies ranging from quantum information processing (QIP) to quantum-enhanced sensing and metrology. Due to its wide band gap, diamond can host hundreds of different color centers. However, their suitability for QIP or sensing applications has only been tested for a handful of these, with the nitrogen vacancy (NV) strongly dominating this field of research. Due to its limited optical properties, the success of the NV for QIP applications however strongly depends on the development of efficient photonic interfaces. In the past years the negatively charged silicon vacancy (SiV) center received significant attention due to its highly favourable spectral properties such as narrow zero phonon line transitions and weak phonon sidebands. We here review recent work investigating the SiV centre's orbital and electron spin coherence properties as well as techniques to coherently control its quantum state using microwave as well as optical fields and we outline potential future experimental directions to improve the SiV's coherence time scale and to develop it into a valuable tool for QIP applications.
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Submitted 29 September, 2017;
originally announced September 2017.
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All-optical control of the silicon-vacancy spin in diamond at millikelvin temperatures
Authors:
Jonas Nils Becker,
Benjamin Pingault,
David Groß,
Mustafa Gündoğan,
Nadezhda Kukharchyk,
Matthew Markham,
Andrew Edmonds,
Mete Atatüre,
Pavel Bushev,
Christoph Becher
Abstract:
The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Here, we combine both to achieve all-optical coherent control of its spin states. We utilize this method to explore spin dephasing effects in an impurity-rich sample beyond the limit of phonon-induced decoherence: Employing Ra…
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The silicon-vacancy center in diamond offers attractive opportunities in quantum photonics due to its favorable optical properties and optically addressable electronic spin. Here, we combine both to achieve all-optical coherent control of its spin states. We utilize this method to explore spin dephasing effects in an impurity-rich sample beyond the limit of phonon-induced decoherence: Employing Ramsey and Hahn-echo techniques at 12mK base temperature we identify resonant coupling to a substitutional nitrogen spin bath as the limiting decoherence source for the electron spin.
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Submitted 28 August, 2017;
originally announced August 2017.
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Coherent control of the silicon-vacancy spin in diamond
Authors:
Benjamin Pingault,
David-Dominik Jarausch,
Christian Hepp,
Lina Klintberg,
Jonas N. Becker,
Matthew Markham,
Christoph Becher,
Mete Atatüre
Abstract:
Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essentia…
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Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essential. Here, we report the measurement of optically detected magnetic resonance and the demonstration of coherent control of a single silicon-vacancy centre spin with a microwave field. Using Ramsey interferometry, we directly measure a spin coherence time, T2*, of 115 +/- 9 ns at 3.6 K. The temperature dependence of coherence times indicates that dephasing and decay of the spin arise from single phonon-mediated excitation between orbital branches of the ground state. Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces.
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Submitted 24 January, 2017;
originally announced January 2017.
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Photoluminescence excitation and spectral hole burning spectroscopy of silicon vacancy centers in diamond
Authors:
Carsten Arend,
Jonas Nils Becker,
Hadwig Sternschulte,
Doris Steinmüller-Nethl,
Christoph Becher
Abstract:
Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to pertubations of the dielectric environment, i.e. they show very weak spectral diffusion. This property renders ensembles of SiV centers interesting for s…
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Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to pertubations of the dielectric environment, i.e. they show very weak spectral diffusion. This property renders ensembles of SiV centers interesting for sensing applications. We here report on photoluminescence excitation (PLE) spectroscopy on an SiV ensemble in a low strain, CVD-grown high quality diamond layer, where we measure the fine structure with high resolution and obtain the linewidths and splittings of the SiV centers. We investigate the temperature dependence of the width and position of the fine structure peaks. Our measurements reveal linewidths of about 10 GHz as compared to a lifetime limited width on the order of 0.1 GHz. This difference arises from the inhomogeneous broadening of the transitions caused by residual strain. To overcome inhomogeneous broadening we use spectral hole burning spectroscopy which enables us to measure a nearly lifetime limited homogeneous linewidth of 279 MHz. Furthermore, we demonstrate evidence of coherent interaction in the system by driving a $Λ$-scheme. Additional measurements on single emitters created by ion implantation confirm the homogeneous linewidths seen in the spectral hole burning experiments and relate the ground state splitting to the decoherence rate.
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Submitted 14 March, 2016;
originally announced March 2016.
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Ultrafast, all-optical coherent control of single silicon vacancy colour centres in diamond
Authors:
Jonas Nils Becker,
Johannes Görlitz,
Carsten Arend,
Matthew Markham,
Christoph Becher
Abstract:
Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV offers an optically accessible Λ-type level structure with a large orbital level splitting even without the need of an external magnetic field and previous stu…
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Recently, the negatively charged silicon vacancy centre (SiV) in diamond has emerged as a novel promising system for quantum information processing (QIP) due to its superior spectral properties and advantageous electronic structure: The SiV offers an optically accessible Λ-type level structure with a large orbital level splitting even without the need of an external magnetic field and previous studies determined the ground state coherence time of the centre to be on the order of 35-45ns. While these studies already indicate the feasibility of an ultrafast all-optical coherent control of the SiV, no experimental realization has been presented so far. Here, we report on optical Rabi oscillations and Ramsey interference between the ground and the excited state of the SiV using 12 ps long, resonant rotation pulses. Moreover, utilizing a Λ-scheme, we demonstrate Raman-based coherent Rabi rotations and Ramsey interference within the ground state manifold using a single, 1ps long off-resonant pulse. These measurements prove the accessibility of the complete set of single-qubit operations relying solely on optical fields and pave the way for high-speed QIP applications using SiV centres.
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Submitted 2 March, 2016;
originally announced March 2016.
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Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers
Authors:
Carsten Arend,
Patrick Appel,
Jonas Nils Becker,
Marcel Schmidt,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Patrick Maletinsky,
Elke Neu
Abstract:
We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned ar…
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We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.
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Submitted 9 February, 2016; v1 submitted 11 November, 2015;
originally announced November 2015.
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All-optical formation of coherent dark states of silicon-vacancy spins in diamond
Authors:
Benjamin Pingault,
Jonas N. Becker,
Carsten H. H. Schulte,
Carsten Arend,
Christian Hepp,
Tillmann Godde,
Alexander I. Tartakovskii,
Matthew Markham,
Christoph Becher,
Mete Atature
Abstract:
Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum.…
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Spin impurities in diamond can be versatile tools for a wide range of solid-state-based quantum technologies, but finding spin impurities which offer sufficient quality in both photonic and spin properties remains a challenge for this pursuit. The silicon-vacancy center has recently attracted a lot of interest due to its spin-accessible optical transitions and the quality of its optical spectrum. Complementing these properties, spin coherence is essential for the suitability of this center as a spin-photon quantum interface. Here, we report all-optical generation of coherent superpositions of spin states in the ground state of a negatively charged silicon-vacancy center using coherent population trapping. Our measurements reveal a characteristic spin coherence time, T2*, exceeding 250 nanoseconds at 4 K. We further investigate the role of phonon-mediated coupling between orbital states as a source of irreversible decoherence. Our results indicate the feasibility of all-optical coherent control of silicon-vacancy spins using ultrafast laser pulses.
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Submitted 14 September, 2014;
originally announced September 2014.
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The electronic structure of the silicon vacancy color center in diamond
Authors:
Christian Hepp,
Tina Müller,
Victor Waselowski,
Jonas N. Becker,
Benjamin Pingault,
Hadwig Sternschulte,
Doris Steinmüller-Nethl,
Adam Gali,
Jeronimo R. Maze,
Mete Atatüre,
Christoph Becher
Abstract:
The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar response of si…
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The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar response of single centers and a SiV ensemble in a low strain reference sample proves our ability to fabricate almost perfect single SiVs, revealing the true nature of the defect's electronic properties. We model the electronic states using a group-theoretical approach yielding a good agreement with the experimental observations. Furthermore, the model correctly predicts polarization measurements on single SiV centers and explains recently discovered spin selective excitation of SiV defects.
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Submitted 11 October, 2013;
originally announced October 2013.
