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Hierarchies of Hofstadter butterflies in 2D covalent-organic frameworks
Authors:
David Bodesheim,
Robert Biele,
Gianaurelio Cuniberti
Abstract:
The Hofstadter butterfly is one of the first and most fascinating examples of the fractal and self-similar quantum nature of free electrons in a lattice pierced by a perpendicular magnetic field. However, the direct experimental verification of this effect on single-layer materials is still missing as very strong and inaccessible magnetic fields are necessary. For this reason, its indirect experim…
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The Hofstadter butterfly is one of the first and most fascinating examples of the fractal and self-similar quantum nature of free electrons in a lattice pierced by a perpendicular magnetic field. However, the direct experimental verification of this effect on single-layer materials is still missing as very strong and inaccessible magnetic fields are necessary. For this reason, its indirect experimental verification has only been realized in artificial periodic 2D systems, like moiré lattices. The only recently synthesized 2D covalent-organic frameworks might circumvent this limitation: Due to their large pore structures, magnetic fields needed to detect most features of the Hofstadter butterfly are indeed accessible with today's technology. This work opens the door to making this exotic and theoretical issue from the 70s measurable and might solve the quest for the experimental verification of the Hofstadter butterfly in single-layer materials. Moreover, the intrinsic hierarchy of different pore sizes in a 2D covalent-organic framework adds additional complexity and beauty to the original butterflies and leads to a directly accessible playground for new physical observations.
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Submitted 6 November, 2022;
originally announced November 2022.
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Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$
Authors:
Foad Ghasemi,
Riccardo Frisenda,
Eduardo Flores,
Nikos Papadopoulos,
Robert Biele,
David Perez de Lara,
Herre S. J. van der Zant,
Kenji Watanabe,
Takashi Taniguchi,
Roberto D'Agosta,
Jose R. Ares,
Carlos Sánchez,
Isabel J. Ferrer,
Andres Castellanos-Gomez
Abstract:
In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semi…
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In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur.
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Submitted 11 June, 2020;
originally announced June 2020.
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Switchable Josephson current in junctions with spin-orbit coupling
Authors:
B. Bujnowski,
R. Biele,
F. S. Bergeret
Abstract:
We study the Josephson current in two types of lateral junctions with spin-orbit coupling and an exchange field. The first system (type 1 junction) consists of superconductors with heavy metal interlayers linked by a ferromagnetic bridge, such that the spin-orbit coupling is finite only at the superconductor/heavy metal interface. In the second type (type 2) of system we assume that the spin orbit…
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We study the Josephson current in two types of lateral junctions with spin-orbit coupling and an exchange field. The first system (type 1 junction) consists of superconductors with heavy metal interlayers linked by a ferromagnetic bridge, such that the spin-orbit coupling is finite only at the superconductor/heavy metal interface. In the second type (type 2) of system we assume that the spin orbit coupling is finite in the bridge region. The length of both junctions is larger than the magnetic decay length such that the Josephson current is carried uniquely by the long-range triplet component of the condensate. The latter is generated by the spin-orbit coupling via two mechanisms, spin precession and inhomogeneous spin-relaxation. We show that the current can be controlled by rotating the magnetization of the bridge or by tuning the strength of the spin-orbit coupling in type 2 junctions., and also discuss how the ground-state of the junction can be tuned from a $0$ to a $π$ phase difference between the superconducting electrodes. In leading order in the spin-orbit coupling, the spin precession dominates the behavior of the triplet component and both
junctions behave similarly. However, when spin relaxation effects are included junction of type 2 offers a wider parameter range in which $0$-$π$ transitions take place.
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Submitted 1 September, 2019;
originally announced September 2019.
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Large birefringence and linear dichroism in TiS3 nanosheets
Authors:
Nikos Papadopoulos,
Riccardo Frisenda,
Robert Biele,
Eduardo Flores,
Jose R. Ares,
Carlos Sanchez,
Herre S. J. van der Zant,
Isabel J. Ferrer,
Roberto D'Agosta,
Andres Castellanos-Gomez
Abstract:
TiS3 nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS3 is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study the optical contrast of TiS3 nanosheets of variable thickness on SiO2/Si substr…
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TiS3 nanosheets have proven to be promising candidates for ultrathin optoelectronic devices due to their direct narrow band-gap and the strong light-matter interaction. In addition, the marked in-plane anisotropy of TiS3 is appealing for the fabrication of polarization sensitive optoelectronic devices. Herein, we study the optical contrast of TiS3 nanosheets of variable thickness on SiO2/Si substrates, from which we obtain the complex refractive index in the visible spectrum. We find that TiS3 exhibits very large birefringence, larger than that of well-known strong birefringent materials like TiO2 or calcite, and linear dichroism. These findings are in qualitative agreement with ab initio calculations that suggest an excitonic origin for the birefringence and linear dichroism of the material.
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Submitted 24 September, 2020; v1 submitted 1 October, 2018;
originally announced October 2018.
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Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides
Authors:
Joshua O. Island,
Aday J. Molina-Mendoza,
Mariam Barawi,
Robert Biele,
Eduardo Flores,
Jose M. Clamagirand,
Jose R. Ares,
Carlos Sanchez,
Herre S. J. van der Zant,
Roberto D'Agosta,
Isabel J. Ferrer,
Andres Castellanos-Gomez
Abstract:
The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we r…
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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV- 2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).
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Submitted 30 April, 2017; v1 submitted 6 February, 2017;
originally announced February 2017.
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Controlling heat and particle currents in nanodevices by quantum observation
Authors:
Robert Biele,
César A. Rodríguez-Rosario,
Thomas Frauenheim,
Angel Rubio
Abstract:
We demonstrate that in a standard thermo-electric nanodevice the current and heat flows are not only dictated by the temperature and potential gradient, but also by the external action of a local quantum observer that controls the coherence of the device. Depending on how and where the observation takes place, the direction of heat and particle currents can be independently controlled. In fact, we…
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We demonstrate that in a standard thermo-electric nanodevice the current and heat flows are not only dictated by the temperature and potential gradient, but also by the external action of a local quantum observer that controls the coherence of the device. Depending on how and where the observation takes place, the direction of heat and particle currents can be independently controlled. In fact, we show that the current and heat flow in a quantum material can go against the natural temperature and voltage gradients. Dynamical quantum observation offers new possibilities for the control of quantum transport far beyond classical thermal reservoirs. Through the concept of local projections, we illustrate how we can create and directionality control the injection of currents (electronic and heat) in nanodevices. This scheme provides novel strategies to construct quantum devices with application in thermoelectrics, spintronic injection, phononics, and sensing among others. In particular, highly efficient and selective spin injection might be achieved by local spin projection techniques.
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Submitted 4 February, 2019; v1 submitted 25 November, 2016;
originally announced November 2016.
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Strong quantum confinement effect in the optical properties of ultrathin α-In2Se3
Authors:
Jorge Quereda,
Robert Biele,
Gabino Rubio-Bollinger,
Nicolás Agraït,
Roberto D'Agosta,
Andres Castellanos-Gomez
Abstract:
The effect of quantum confinement in the optical absorption spectra of atomically thin α-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated α-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors.
The effect of quantum confinement in the optical absorption spectra of atomically thin α-In2Se3 crystals is studied, observing a huge thickness-dependent shift in the optical band gap of exfoliated α-In2Se3 flakes. The band gap variation reported here is among the largest found in semiconductor crystals and spans a region of the near-UV spectrum uncovered by other 2D semiconductors.
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Submitted 18 October, 2016;
originally announced October 2016.
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Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties
Authors:
Joshua O. Island,
Robert Biele,
Mariam Barawi,
Jose M. Clamagirand,
Jose R. Ares,
Carlos Sanchez,
Herre S. J. van der Zant,
Isabel J. Ferrer,
Roberto D'Agosta,
Andres Castellanos-Gomez
Abstract:
We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we de…
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We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in good agreement with the observed experimental optical transmittance.
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Submitted 16 April, 2016; v1 submitted 23 October, 2015;
originally announced October 2015.
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Electronic bandgap and exciton binding energy of layered semiconductor TiS3
Authors:
Aday J. Molina-Mendoza,
Mariam Barawi,
Robert Biele,
Eduardo Flores,
José R. Ares,
Carlos Sánchez,
Gabino Rubio-Bollinger,
Nicolás Agraït,
Roberto D'Agosta,
Isabel J. Ferrer,
Andres Castellanos-Gomez
Abstract:
We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation…
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We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobility and inplane anisotropic properties, to determine its exciton binding energy. We combine scanning tunneling spectroscopy and photoelectrochemical measurements with random phase approximation and Bethe-Salpeter equation calculations to obtain the electronic and optical bandgaps and thus the exciton binding energy. We find experimental values for the electronic bandgap, optical bandgap and exciton binding energy of 1.2 eV, 1.07 eV and 130 meV, respectively, and 1.15 eV, 1.05 eV and 100 meV for the corresponding theoretical results. The exciton binding energy is orders of magnitude larger than that of common semiconductors and comparable to bulk transition metal dichalcogenides, making TiS3 ribbons a highly interesting material for optoelectronic applications and for studying excitonic phenomena even at room temperature.
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Submitted 21 September, 2015; v1 submitted 18 September, 2015;
originally announced September 2015.
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Strain induced bang-gap engineering in layered $\text{TiS}_3$
Authors:
Robert Biele,
Eduardo Flores,
Jose Ramon Ares,
Carlos Sanchez,
Isabel J. Ferrer,
Gabino Rubio-Bollinger,
Andres Castellanos-Gomez,
Roberto D'Agosta
Abstract:
By combining {\it ab initio} calculations and experiments we demonstrate how the band gap of the transition metal tri-chalcogenide TiS$_3$ can be modified by inducing tensile or compressive strain. We show by numerical calculations that the electronic band gap of layered TiS$_3$ can be modified for monolayer, bilayer and bulk material by inducing either hydrostatic pressure or strain. In addition,…
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By combining {\it ab initio} calculations and experiments we demonstrate how the band gap of the transition metal tri-chalcogenide TiS$_3$ can be modified by inducing tensile or compressive strain. We show by numerical calculations that the electronic band gap of layered TiS$_3$ can be modified for monolayer, bilayer and bulk material by inducing either hydrostatic pressure or strain. In addition, we find that the monolayer and bilayer exhibits a transition from a direct to indirect gap when the strain is increased in the direction of easy transport. The ability to control the band gap and its nature can have an impact in the use of TiS$_3$ for optical applications. We verify our prediction via optical absorption experiments that present a band gap increase of up to 10\% upon tensile stress application along the easy transport direction.
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Submitted 1 September, 2015;
originally announced September 2015.
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TiS3 transistors with tailored morphology and electrical properties
Authors:
Joshua O. Island,
Mariam Barawi,
Robert Biele,
Adrian Almazan,
Jose M. Clamagirand,
Jose R. Ares,
Carlos Sanchez,
Herre S. J. van der Zant,
Jose V. Alvarez,
Roberto D'Agosta,
Isabel J. Ferrer,
Andres Castellanos-Gomez
Abstract:
Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations,…
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Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping.
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Submitted 20 March, 2015;
originally announced March 2015.
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Time-dependent thermal transport theory
Authors:
Robert Biele,
Roberto D'Agosta,
Angel Rubio
Abstract:
Understanding thermal transport in nanoscale systems presents important challenges to both theory and experiment. In particular, the concept of local temperature at the nanoscale appears difficult to justify. Here, we propose a novel theoretical approach where we replace the temperature gradient with controllable external black-body radiations. The theory recovers known physical results, for examp…
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Understanding thermal transport in nanoscale systems presents important challenges to both theory and experiment. In particular, the concept of local temperature at the nanoscale appears difficult to justify. Here, we propose a novel theoretical approach where we replace the temperature gradient with controllable external black-body radiations. The theory recovers known physical results, for example the linear relation between the thermal current and the temperatures difference of two black-bodies. Furthermore, our theory is not limited to the linear regime and goes beyond accounting for non linear effects and transient phenomena. In the strong coupling and large temperature gradients, we show that there is a maximum energy current that the system can sustain and we recover the Kramers' turnover. Since the present theory is general and can be adapted to describe both electron and phonon dynamics, it provides a first step towards a unified formalism for investigating thermal and electronic transport.
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Submitted 18 June, 2015; v1 submitted 18 December, 2014;
originally announced December 2014.
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Application of a time-convolutionless stochastic Schrödinger equation to energy transport and thermal relaxation
Authors:
Robert Biele,
Carsten Timm,
Roberto D'Agosta
Abstract:
Quantum stochastic methods based on effective wave functions form a framework for investigating the generally non-Markovian dynamics of a quantum-mechanical system coupled to a bath. They promise to be computationally superior to the master-equation approach, which is numerically expensive for large dimensions of the Hilbert space. Here, we numerically investigate the suitability of a known stocha…
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Quantum stochastic methods based on effective wave functions form a framework for investigating the generally non-Markovian dynamics of a quantum-mechanical system coupled to a bath. They promise to be computationally superior to the master-equation approach, which is numerically expensive for large dimensions of the Hilbert space. Here, we numerically investigate the suitability of a known stochastic Schrödinger equation that is local in time to give a description of thermal relaxation and energy transport. This stochastic Schrödinger equation can be solved with a moderate numerical cost, indeed comparable to that of a Markovian system, and reproduces the dynamics of a system evolving according to a general non-Markovian master equation. After verifying that it describes thermal relaxation correctly, we apply it for the first time to the energy transport in a spin chain. We also discuss a portable algorithm for the generation of the coloured noise associated with the numerical solution of the non-Markovian dynamics.
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Submitted 14 October, 2014; v1 submitted 16 March, 2012;
originally announced March 2012.
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A stochastic approach to open quantum systems
Authors:
Robert Biele,
Roberto D'Agosta
Abstract:
Stochastic methods are ubiquitous to a variety of fields, ranging from Physics to Economy and Mathematics. In many cases, in the investigation of natural processes, stochasticity arises every time one considers the dynamics of a system in contact with a somehow bigger system, an environment, that is considered in thermal equilibrium. Any small fluctuation of the environment has some random effect…
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Stochastic methods are ubiquitous to a variety of fields, ranging from Physics to Economy and Mathematics. In many cases, in the investigation of natural processes, stochasticity arises every time one considers the dynamics of a system in contact with a somehow bigger system, an environment, that is considered in thermal equilibrium. Any small fluctuation of the environment has some random effect on the system. In Physics, stochastic methods have been applied to the investigation of phase transitions, thermal and electrical noise, thermal relaxation, quantum information, Brownian motion etc.
In this review, we will focus on the so-called stochastic Schrödinger equation. This is useful as a starting point to investigate the dynamics of open quantum systems capable of exchanging energy and momentum with an external environment. We discuss in some details the general derivation of a stochastic Schrödinger equation and some of its recent applications to spin thermal transport, thermal relaxation, and Bose-Einstein condensation. We thoroughly discuss the advantages of this formalism with respect to the more common approach in terms of the reduced density matrix. The applications discussed here constitute only a few examples of a much wider range of applicability.
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Submitted 1 August, 2012; v1 submitted 12 December, 2011;
originally announced December 2011.
