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Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond
Authors:
Eric I. Rosenthal,
Souvik Biswas,
Giovanni Scuri,
Hope Lee,
Abigail J. Stein,
Hannah C. Kleidermacher,
Jakob Grzesik,
Alison E. Rugar,
Shahriar Aghaeimeibodi,
Daniel Riedel,
Michael Titze,
Edward S. Bielejec,
Joonhee Choi,
Christopher P. Anderson,
Jelena Vuckovic
Abstract:
The negatively charged tin-vacancy center in diamond (SnV$^-$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV$^-$'s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 Kelvin. Here, we demonstrate measurement of a single SnV$^-$ e…
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The negatively charged tin-vacancy center in diamond (SnV$^-$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV$^-$'s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 Kelvin. Here, we demonstrate measurement of a single SnV$^-$ electronic spin with a single-shot readout fidelity of $87.4\%$, which can be further improved to $98.5\%$ by conditioning on multiple readouts. We show this performance is compatible with rapid microwave spin control, demonstrating that the trade-off between optical readout and spin control inherent to group-IV centers in diamond can be overcome for the SnV$^-$. Finally, we use weak quantum measurement to study measurement induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and makes use of the qubit's spin coherence as a metrological tool. Taken together, these results overcome an important hurdle in the development of the SnV$^-$ based quantum technologies, and in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters.
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Submitted 19 March, 2024;
originally announced March 2024.
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Contributions to the optical linewidth of shallow donor-bound excitonic transition in ZnO
Authors:
Vasileios Niaouris,
Samuel H. D'Ambrosia,
Christian Zimmermann,
Xingyi Wang,
Ethan R. Hansen,
Michael Titze,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which impact the spin-photon interface include radiative lifetime, optical inhomogeneous and homogeneous linewidth and optical depth. We study the donor-bound excito…
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Neutral shallow donors in zinc oxide (ZnO) are spin qubits with optical access via the donor-bound exciton. This spin-photon interface enables applications in quantum networking, memories and transduction. Essential optical parameters which impact the spin-photon interface include radiative lifetime, optical inhomogeneous and homogeneous linewidth and optical depth. We study the donor-bound exciton optical linewidth properties of Al, Ga, and In donors in single-crystal ZnO. The ensemble photoluminescence linewidth ranges from 4-11 GHz, less than two orders of magnitude larger than the expected lifetime-limited linewidth. The ensemble linewidth remains narrow in absorption through samples with an estimated optical depth up to several hundred. The primary thermal relaxation mechanism is identified and found to have a negligible contribution to the total linewidth at 2 K. We find that inhomogeneous broadening due to the disordered isotopic environment in natural ZnO is significant, contributing 2 GHz. Two-laser spectral hole burning measurements, indicate the dominant mechanism, however, is homogeneous. Despite this broadening, the high homogeneity, large optical depth and potential for isotope purification indicate that the optical properties of the ZnO donor-bound exciton are promising for a wide range of quantum technologies and motivate a need to improve the isotope and chemical purity of ZnO for quantum technologies.
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Submitted 17 January, 2024; v1 submitted 24 July, 2023;
originally announced July 2023.
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Hyperfine Spectroscopy of Isotopically Engineered Group-IV Color Centers in Diamond
Authors:
Isaac B. W. Harris,
Cathryn P. Michaels,
Kevin C. Chen,
Ryan A. Parker,
Michael Titze,
Jesus Arjona Martinez,
Madison Sutula,
Ian R. Christen,
Alexander M. Stramma,
William Roth,
Carola M. Purser,
Martin Hayhurst Appel,
Chao Li,
Matthew E. Trusheim,
Nicola L. Palmer,
Matthew L. Markham,
Edward S. Bielejec,
Mete Atature,
Dirk Englund
Abstract:
A quantum register coupled to a spin-photon interface is a key component in quantum communication and information processing. Group-IV color centers in diamond (SiV, GeV, and SnV) are promising candidates for this application, comprising an electronic spin with optical transitions coupled to a nuclear spin as the quantum register. However, the creation of a quantum register for these color centers…
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A quantum register coupled to a spin-photon interface is a key component in quantum communication and information processing. Group-IV color centers in diamond (SiV, GeV, and SnV) are promising candidates for this application, comprising an electronic spin with optical transitions coupled to a nuclear spin as the quantum register. However, the creation of a quantum register for these color centers with deterministic and strong coupling to the spin-photon interface remains challenging. Here, we make first-principles predictions of the hyperfine parameters of the group-IV color centers, which we verify experimentally with a comprehensive comparison between the spectra of spin active and spin neutral intrinsic dopant nuclei in single GeV and SnV emitters. In line with the theoretical predictions, detailed spectroscopy on large sample sizes reveals that hyperfine coupling causes a splitting of the optical transition of SnV an order of magnitude larger than the optical linewidth and provides a magnetic-field insensitive transition. This strong coupling provides access to a new regime for quantum registers in diamond color centers, opening avenues for novel spin-photon entanglement and quantum sensing schemes for these well-studied emitters.
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Submitted 6 June, 2023; v1 submitted 31 May, 2023;
originally announced June 2023.
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Properties of donor qubits in ZnO formed by indium ion implantation
Authors:
Xingyi Wang,
Christian Zimmermann,
Michael Titze,
Vasileios Niaouris,
Ethan R. Hansen,
Samuel H. D'Ambrosia,
Lasse Vines,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, c…
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Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.
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Submitted 14 June, 2023; v1 submitted 10 December, 2022;
originally announced December 2022.
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Large-scale optical characterization of solid-state quantum emitters
Authors:
Madison Sutula,
Ian Christen,
Eric Bersin,
Michael P. Walsh,
Kevin C. Chen,
Justin Mallek,
Alexander Melville,
Michael Titze,
Edward S. Bielejec,
Scott Hamilton,
Danielle Braje,
P. Benjamin Dixon,
Dirk R. Englund
Abstract:
Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color center…
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Solid-state quantum emitters have emerged as a leading quantum memory for quantum networking applications. However, standard optical characterization techniques are neither efficient nor repeatable at scale. In this work, we introduce and demonstrate spectroscopic techniques that enable large-scale, automated characterization of color centers. We first demonstrate the ability to track color centers by registering them to a fabricated machine-readable global coordinate system, enabling systematic comparison of the same color center sites over many experiments. We then implement resonant photoluminescence excitation in a widefield cryogenic microscope to parallelize resonant spectroscopy, achieving two orders of magnitude speed-up over confocal microscopy. Finally, we demonstrate automated chip-scale characterization of color centers and devices at room temperature, imaging thousands of microscope fields of view. These tools will enable accelerated identification of useful quantum emitters at chip-scale, enabling advances in scaling up color center platforms for quantum information applications, materials science, and device design and characterization.
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Submitted 24 October, 2022;
originally announced October 2022.
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Directional Detection of Dark Matter Using Solid-State Quantum Sensing
Authors:
Reza Ebadi,
Mason C. Marshall,
David F. Phillips,
Johannes Cremer,
Tao Zhou,
Michael Titze,
Pauli Kehayias,
Maziar Saleh Ziabari,
Nazar Delegan,
Surjeet Rajendran,
Alexander O. Sushkov,
F. Joseph Heremans,
Edward S. Bielejec,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high…
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Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high-density target material. A detector of this type operates in a hybrid mode. The WIMP or neutrino-induced nuclear recoil is detected using real-time charge, phonon, or photon collection. The directional signal, however, is imprinted as a durable sub-micron damage track in the lattice structure. This directional signal can be read out by a variety of atomic physics techniques, from point defect quantum sensing to x-ray microscopy. In this white paper, we present the detector principle and review the status of the experimental techniques required for directional readout of nuclear recoil tracks. Specifically, we focus on diamond as a target material; it is both a leading platform for emerging quantum technologies and a promising component of next-generation semiconductor electronics. Based on the development and demonstration of directional readout in diamond over the next decade, a future WIMP detector will leverage or motivate advances in multiple disciplines towards precision dark matter and neutrino physics.
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Submitted 14 June, 2023; v1 submitted 11 March, 2022;
originally announced March 2022.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
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Large-scale integration of near-indistinguishable artificial atoms in hybrid photonic circuits
Authors:
Noel H. Wan,
Tsung-Ju Lu,
Kevin C. Chen,
Michael P. Walsh,
Matthew E. Trusheim,
Lorenzo De Santis,
Eric A. Bersin,
Isaac B. Harris,
Sara L. Mouradian,
Ian R. Christen,
Edward S. Bielejec,
Dirk Englund
Abstract:
A central challenge in developing quantum computers and long-range quantum networks lies in the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state 'artificial atom' qubits, enabling on-demand remote entanglement, coherent control of over 10 ancillae qubits with minute-long coherence times, and memory-enhanced qua…
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A central challenge in developing quantum computers and long-range quantum networks lies in the distribution of entanglement across many individually controllable qubits. Colour centres in diamond have emerged as leading solid-state 'artificial atom' qubits, enabling on-demand remote entanglement, coherent control of over 10 ancillae qubits with minute-long coherence times, and memory-enhanced quantum communication. A critical next step is to integrate large numbers of artificial atoms with photonic architectures to enable large-scale quantum information processing systems. To date, these efforts have been stymied by qubit inhomogeneities, low device yield, and complex device requirements. Here, we introduce a process for the high-yield heterogeneous integration of 'quantum micro-chiplets' (QMCs) -- diamond waveguide arrays containing highly coherent colour centres -- with an aluminium nitride (AlN) photonic integrated circuit (PIC). Our process enables the development of a 72-channel defect-free array of germanium-vacancy (GeV) and silicon-vacancy (SiV) colour centres in a PIC. Photoluminescence spectroscopy reveals long-term stable and narrow average optical linewidths of 54 MHz (146 MHz) for GeV (SiV) emitters, close to the lifetime-limited linewidth of 32 MHz (93 MHz). Additionally, inhomogeneities in the individual qubits can be compensated in situ with integrated tuning of the optical frequencies over 100 GHz. The ability to assemble large numbers of nearly indistinguishable artificial atoms into phase-stable PICs provides an architecture toward multiplexed quantum repeaters and general-purpose quantum computers.
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Submitted 12 November, 2019;
originally announced November 2019.
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Coherent control and high-fidelity readout of chromium ions in commercial silicon carbide
Authors:
Berk Diler,
Samuel J. Whiteley,
Christopher P. Anderson,
Gary Wolfowicz,
Marie E. Wesson,
Edward S. Bielejec,
F. Joseph Heremans,
David Awschalom
Abstract:
Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commer…
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Transition metal ions provide a rich set of optically active defect spins in wide bandgap semiconductors. Chromium (Cr4+) in silicon-carbide (SiC) produces a spin-1 ground state with a narrow, spectrally isolated, spin-selective, near-telecom optical interface. However, previous studies were hindered by material quality resulting in limited coherent control. In this work, we implant Cr into commercial 4H-SiC and show optimal defect activation after annealing above 1600 C. We measure an ensemble optical hole linewidth of 31 MHz, an order of magnitude improvement compared to as-grown samples. An in-depth exploration of optical and spin dynamics reveals efficient spin polarization, coherent control, and readout with high fidelity (79%). We report T1 times greater than 1 second at cryogenic temperatures (15 K) with a T2* = 317 nanoseconds and a T2 = 81 microseconds, where spin dephasing times are currently limited by spin-spin interactions within the defect ensemble. Our results demonstrate the potential of Cr4+ in SiC as an extrinsic, optically active spin qubit.
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Submitted 18 September, 2019;
originally announced September 2019.
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Controlling light emission by engineering atomic geometries in silicon photonics
Authors:
Arindam Nandi,
Xiaodong Jiang,
Dongmin Pak,
Daniel Perry,
Kyunghun Han,
Edward S Bielejec,
Yi Xuan,
Mahdi Hosseini
Abstract:
By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of…
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By engineering atomic geometries composed of nearly 1000 atomic segments embedded in micro-resonators we observe Bragg resonances induced by the atomic lattice at the telecommunication wavelength. The geometrical arrangement of erbium atoms into a lattice inside a silicon nitride microring resonator reduces the scattering loss at a wavelength commensurate with the lattice. We confirm dependency of light emission to the atomic positions and lattice spacing and also observe Fano interference between resonant modes in the system.
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Submitted 12 March, 2020; v1 submitted 24 February, 2019;
originally announced February 2019.
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A bright nanowire single photon source based on SiV centers in diamond
Authors:
L. Marseglia,
K. Saha,
A. Ajoy,
T. Schröder,
D. Englund,
F. Jelezko,
R. Walsworth,
J. L. Pacheco,
D. L. Perry,
E. S. Bielejec,
P. Cappellaro
Abstract:
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon…
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The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a possible candidate for such a single photon source. However, due to the high refraction index mismatch to air, color centers in diamond typically exhibit low photon out-coupling. An additional shortcoming is due to the random localization of native defects in the diamond sample. Here we demonstrate deterministic implantation of Si ions with high conversion efficiency to single SiV- centers, targeted to fabricated nanowires. The co-localization of single SiV- centers with the nanostructures yields a ten times higher light coupling efficiency than for single SiV- centers in bulk diamond. This enhanced photon out-coupling, together with the intrinsic scalability of the SiV- creation method, enables a new class of devices for integrated photonics and quantum science.
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Submitted 18 August, 2017;
originally announced August 2017.
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Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures
Authors:
Tim Schröder,
Matthew E. Trusheim,
Michael Walsh,
Luozhou Li,
Jiabao Zheng,
Marco Schukraft,
Jose L. Pacheco,
Ryan M. Camacho,
Edward S. Bielejec,
Alp Sipahigil,
Ruffin E. Evans,
Denis D. Sukachev,
Christian T. Nguyen,
Mikhail D. Lukin,
Dirk Englund
Abstract:
The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm…
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The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices.
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Submitted 29 October, 2016;
originally announced October 2016.
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Triangulating tunneling resonances in a point contact
Authors:
Nathaniel C. Bishop,
Ralph W. Young,
Gregory A. Ten Eyck,
Joel R. Wend,
Edward S. Bielejec,
Kevin Eng,
Lisa A. Tracy,
Michael P. Lilly,
Malcolm S. Carroll,
Carlos Borrás Pinilla,
Harold L. Stalford
Abstract:
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances f…
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We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device structure. We identify which resonances are likely candidates for transport through the antimony donor as opposed to unintentional disorder induced potentials using capacitance triangulation. We determine the capacitances from the resonant feature to each of the conducting gates and the source/drain two dimensional electron gas regions. In our device geometry, these capacitances provide information about the resonance location in three dimensions. Semi-classical electrostatic simulations of capacitance, already used to map quantum dot size and position, identify a combination of location and confinement potential size that satisfy our experimental observations. The sensitivity of simulation to position and size allow us to triangulate possible locations of the resonant level with nanometer resolution. We discuss our results and how they may apply to resonant tunneling through a single donor.
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Submitted 25 July, 2011;
originally announced July 2011.
