Showing 1–47 of 47 results for author: Bockrath, M

Dominant 1/3-filling Correlated Insulator States and Orbital Geometric Frustration in Twisted Bilayer Graphene

Authors: Haidong Tian, Emilio Codecido, Dan Mao, Kevin Zhang, Shi Che, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Eun-Ah Kim, Marc Bockrath, Chun Ning Lau

Abstract: Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins;… ▽ More Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins; much less explored is orbital geometric frustration. For electrons in twisted bilayer graphene (tBLG) at denominator 3 fractional filling, Coulomb interactions and the Wannier orbital shapes are predicted to strongly constrain spatial charge ordering, leading to geometrically frustrated ground states that produce a new class of correlated insulators (CIs). Here we report the observation of dominant denominator 3 fractional filling insulating states in large angle tBLG; these states persist in magnetic fields and display magnetic ordering signatures and tripled unit cell reconstruction. These results are in agreement with a strong-coupling theory of symmetry-breaking of geometrically frustrated fractional states. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Tuning Spin Transport in a Graphene Antiferromagnetic Insulator

Authors: Petr Stepanov, Dmitry L. Shcherbakov, Shi Che, Marc W. Bockrath, Yafis Barlas, Dmitry Smirnov, Kenji Watanabe, Takashi Taniguchi, Roger K. Lake, Chun Ning Lau

Abstract: Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an… ▽ More Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an all-graphene electrical circuit, for the first time we demonstrate a selective tuning of ambipolar spin transport through graphene $νにゅー$=0 AFMIs. By modulating polarities of the excitation bias, magnetic fields, and charge carriers that host opposite chiralities, we show that the difference between spin chemical potentials of adjacent edge channels in the spin-injector region is crucial in tuning spin-transport observed across graphene AFMI. We demonstrate that non-local response vanishes upon reversing directions of the co-propagating edge channels when the spin-filters in our devices are no longer selective for a particular spin-polarization. Our results establish a versatile set of methods to tune pure spin transport via an anti-ferromagnetic media and open a pathway to explore their applications for a broad field of antiferromagnetic spintronics research. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Journal ref: Phys. Rev. Applied 18, 014031, 2022

Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2

Authors: Guanzhong Wu1, Dongying Wang, Nishchhal Verma, Rahul Rao, Yang Cheng, Side Guo, Guixin Cao, Kenji Watanabe, Takashi Taniguchi, Chun Ning Lau, Fengyuan Yang, Mohit Randeria, Marc Bockrath, P. Chris Hammel

Abstract: Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry,… ▽ More Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry, high spin orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2 covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to single quadruple-layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications. △ Less

Submitted 6 February, 2022; originally announced February 2022.

Comments: Nano Letters, in press

Evidence for Flat Band Dirac Superconductor Originating from Quantum Geometry

Authors: Haidong Tian, Shi Che, Tianyi Xu, Patrick Cheung, Kenji Watanabe, Takashi Taniguchi, Mohit Randeria, Fan Zhang, Chun Ning Lau, Marc W. Bockrath

Abstract: In a flat band superconductor, the charge carriers' group velocity vF is extremely slow, quenching their kinetic energy. The emergence of superconductivity thus appears paradoxical, as conventional BCS theory implies a vanishing coherence length, superfluid stiffness, and critical current. Here, using twisted bilayer graphene (tBLG), we explore the profound effect of vanishingly small vF in a Dira… ▽ More In a flat band superconductor, the charge carriers' group velocity vF is extremely slow, quenching their kinetic energy. The emergence of superconductivity thus appears paradoxical, as conventional BCS theory implies a vanishing coherence length, superfluid stiffness, and critical current. Here, using twisted bilayer graphene (tBLG), we explore the profound effect of vanishingly small vF in a Dirac superconducting flat band system Using Schwinger-limited non-linear transport studies, we demonstrate an extremely slow vF ~ 1000 m/s for filling fraction nu between -1/2 and -3/4 of the moire superlattice. In the superconducting state, the same velocity limit constitutes a new limiting mechanism for the critical current, analogous to a relativistic superfluid. Importantly, our measurement of superfluid stiffness, which controls the superconductor's electrodynamic response, shows that it is not dominated by the kinetic energy, but instead by the interaction-driven superconducting gap, consistent with recent theories on a quantum geometric contribution. We find evidence for small pairs, characteristic of the BCS to Bose-Einstein condensation (BEC) crossover, with an unprecedented ratio of the superconducting transition temperature to the Fermi temperature exceeding unity, and discuss how this arises for very strong coupling superconductivity in ultra-flat Dirac bands. △ Less

Submitted 26 December, 2021; originally announced December 2021.

Comments: 4 figures

Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor

Authors: D. Shcherbakov, P. Stepanov, S. Memaran, Y. Wang, Y. Xin, J. Yang, K. Wei, R. Baumbach, W. Zheng, K. Watanabe, T. Taniguchi, M. Bockrath, D. Smirnov, T. Siegrist, W. Windl, L. Balicas, C. N. Lau

Abstract: Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate… ▽ More Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter αあるふぁis thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, αあるふぁcould be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Equilibration and Filtering of Quantum Hall Edge States in Few-Layer Black Phosphorus

Authors: J. Yang, K. Wang, S. Che, Z. J. Tuchfeld, K. Watanabe, T. Taniguchi, D. Shcherbakov, S. Moon, D. Smirnov, R. Chen, M. Bockrath, C. N. Lau

Abstract: We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both full equilibration, where all edge channels equilibrate and are equally partitioned at the interfaces, and partial equilibration, where only equilibrati… ▽ More We realize p-p'-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both full equilibration, where all edge channels equilibrate and are equally partitioned at the interfaces, and partial equilibration, where only equilibration only takes place among modes of the same spin polarization. Furthermore, the inner p'-region with low-doping level in the junction can function as a filter for highly doped p-regions which demonstrates gate-tunable transmission of edge channels. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Helical superconducting edge modes from pseudo-Landau levels in graphene

Authors: Daniel Sabsovich, Marc W. Bockrath, Kirill Shtengel, Eran Sela

Abstract: We explore Andreev states at the interface of graphene and a superconductor for a uniform pseudo-magnetic field. Near the zeroth-pseudo Landau level, we find a topological transition as a function of applied Zeeman field, at which a gapless helical mode appears. This 1D mode is protected from backscattering as long as intervalley- and spin-flip scattering are suppressed. We discuss a possible expe… ▽ More We explore Andreev states at the interface of graphene and a superconductor for a uniform pseudo-magnetic field. Near the zeroth-pseudo Landau level, we find a topological transition as a function of applied Zeeman field, at which a gapless helical mode appears. This 1D mode is protected from backscattering as long as intervalley- and spin-flip scattering are suppressed. We discuss a possible experimental platform to detect this gapless mode based on strained suspended membranes on a superconductor, in which dynamical strain causes charge pumping △ Less

Submitted 29 March, 2021; v1 submitted 19 November, 2020; originally announced November 2020.

Comments: 12 pages, 13 figures

Journal ref: Phys. Rev. B 103, 094513 (2021)

Strange metal behavior of the Hall angle in twisted bilayer graphene

Authors: Rui Lyu, Zachary Tuchfeld, Nishchhal Verma, Haidong Tian, Kenji Watanabe, Takashi Taniguchi, Chun Ning Lau, Mohit Randeria, Marc Bockrath

Abstract: Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $\approx 1.08^{\circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resistivities in close to magic-angle TBG. While the observed longitudinal resistivit… ▽ More Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $\approx 1.08^{\circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resistivities in close to magic-angle TBG. While the observed longitudinal resistivity follows linear temperature $T$ dependence consistent with previous reports, the Hall resistance shows an anomalous $T$ dependence with the cotangent of the Hall angle cot $Θしーた{_H} \propto T^2$. Boltzmann theory for quasiparticle transport predicts that both the resistivity and cot $Θしーた{_H}$ should have the same $T$ dependence, contradicting the observed behavior. This failure of quasiparticle-based theories is reminiscent of other correlated strange metals such as cuprates. △ Less

Submitted 16 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. B 103, 245424 (2021)

Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene

Authors: Yongjin Lee, Shi Che, Jairo Velasco Jr., David Tran, Jacopo Baima, Francesco Mauri, Matteo Calandra, Marc Bockrath, Chun Ning Lau

Abstract: Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the strong exchange interaction among the magnetic moments of d- or f-shell electrons. Magnetism, however, can also emerge in perfect lattices from non-magnetic elemen… ▽ More Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the strong exchange interaction among the magnetic moments of d- or f-shell electrons. Magnetism, however, can also emerge in perfect lattices from non-magnetic elements. For instance, flat band systems with high density of states (DOS) may develop spontaneous magnetic ordering, as exemplified by the Stoner criterion. Here we report tunable magnetism in rhombohedral-stacked few-layer graphene (r-FLG). At small but finite doping (n~10^11 cm-2), we observe prominent conductance hysteresis and giant magnetoconductance that exceeds 1000% as a function of magnetic fields. Both phenomena are tunable by density and temperature, and disappears for n>10^12 cm-2 or T>5K. These results are confirmed by first principles calculations, which indicate the formation of a half-metallic state in doped r-FLG, in which the magnetization is tunable by electric field. Our combined experimental and theoretical work demonstrate that magnetism and spin polarization, arising from the strong electronic interactions in flat bands, emerge in a system composed entirely of carbon atoms. The electric field tunability of magnetism provides promise for spintronics and low energy device engineering. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Quantum Hall Effect Measurement of Spin-Orbit Coupling Strengths in Ultraclean Bilayer Graphene/WSe2 Heterostructures

Authors: Dongying Wang, Shi Che, Guixin Cao, Rui Lyu, Kenji Watanabe, Takashi Taniguchi, Chun Ning Lau, Marc Bockrath

Abstract: We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultra-clean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC. A dis… ▽ More We study proximity-induced spin-orbit coupling (SOC) in bilayer graphene/few-layer WSe2 heterostructure devices. Contact mode atomic force microscopy (AFM) cleaning yields ultra-clean interfaces and high-mobility devices. In a perpendicular magnetic field, we measure the quantum Hall effect to determine the Landau level structure in the presence of out-of-plane Ising and in-plane Rashba SOC. A distinct Landau level crossing pattern emerges when tuning the charge density and displacement field independently with dual gates, originating from a layer-selective SOC proximity effect. Analyzing the Landau level crossings and measured inter-Landau level energy gaps yields the proximity induced SOC energy scale. The Ising SOC is ~ 2.2 meV, 100 times higher than the intrinsic SOC in graphene, while its sign is consistent with theories predicting a dependence of SOC on interlayer twist angle. The Rashba SOC is ~15 meV. Finally, we infer the magnetic field dependence of the inter-Landau level Coulomb interactions. These ultraclean bilayer graphene/WSe2 heterostructures provide a high mobility system with the potential to realize novel topological electronic states and manipulate spins in nanostructures. △ Less

Submitted 24 September, 2019; originally announced September 2019.

Comments: Nano Letters, in press

Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices

Authors: A. Geremew, S. Rumyantsev, F. Kargar, B. Debnath, A. Nosek, M. Bloodgood, M. Bockrath, T. Salguero, R. K. Lake, A. A. Balandin

Abstract: We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectrosco… ▽ More We report on switching among three charge-density-wave phases - commensurate, nearly commensurate, incommensurate - and the high-temperature normal metallic phase in thin-film 1T-TaS2 devices induced by application of an in-plane electric field. The electric switching among all phases has been achieved over a wide temperature range, from 77 K to 400 K. The low-frequency electronic noise spectroscopy has been used as an effective tool for monitoring the transitions, particularly the switching from the incommensurate charge-density-wave phase to the normal metal phase. The noise spectral density exhibits sharp increases at the phase transition points, which correspond to the step-like changes in resistivity. Assignment of the phases is consistent with low-field resistivity measurements over the temperature range from 77 K to 600 K. Analysis of the experimental data and calculations of heat dissipation suggest that Joule heating plays a dominant role in the electric-field induced transitions in the tested 1T-TaS2 devices on Si/SiO2 substrates. The possibility of electrical switching among four different phases of 1T-TaS2 is a promising step toward nanoscale device applications. The results also demonstrate the potential of noise spectroscopy for investigating and identifying phase transitions in materials. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Comments: 32 pages, 7 figures

Journal ref: ACS Nano, 13, 7231 (2019)

Correlated Insulating and Superconducting States in Twisted Bilayer Graphene Below the Magic Angle

Authors: Emilio Codecido, Qiyue Wang, Ryan Koester, Shi Che, Haidong Tian, Rui Lv, Son Tran, Kenji Watanabe, Takashi Taniguchi, Fan Zhang, Marc Bockrath, Chun Ning Lau

Abstract: The emergence of flat bands and correlated behaviors in 'magic angle' twisted bilayer graphene (tBLG) has sparked tremendous interest, though many aspects of the system are under intense debate. Here we report observation of both superconductivity and the Mott-like insulating state in a tBLG device with a twist angle of approximately 0.93, which is smaller than the magic angle by 15%. At an electr… ▽ More The emergence of flat bands and correlated behaviors in 'magic angle' twisted bilayer graphene (tBLG) has sparked tremendous interest, though many aspects of the system are under intense debate. Here we report observation of both superconductivity and the Mott-like insulating state in a tBLG device with a twist angle of approximately 0.93, which is smaller than the magic angle by 15%. At an electron concentration of +/-5 electrons per moire unit cell, we observe a narrow resistance peak with an activation energy gap of approximately 0.1 meV, indicating the existence of an additional correlated insulating state. This is consistent with theory predicting the presence of a high-energy band with an energetically flat dispersion. At a doping of +/-12 electrons per moire unit cell we observe a resistance peak due to the presence of Dirac points in the spectrum. Our results reveal that the magic range of tBLG is in fact larger than what is previously expected, and provide a wealth of new information to help decipher the strongly correlated phenomena observed in tBLG. △ Less

Submitted 13 February, 2019; originally announced February 2019.

Raman Spectroscopy, Photocatalytic Degradation and Stabilization of Atomically Thin Chromium Triiodide

Authors: Dmitry Shcherbakov, Petr Stepanov, Daniel Weber, Yaxian Wang, Jin Hu, Yanglin Zhu, Kenji Watanabe, Takashi Taniguchi, Zhiqiang Mao, Wolfgang Windl, Joshua Goldberger, Marc Bockrath, Chun Ning Lau

Abstract: As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium triiodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challenging, due to its extreme instability under ambient conditions. Here we present Raman characterization of CrI3, and demonstrate that the main degradat… ▽ More As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium triiodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challenging, due to its extreme instability under ambient conditions. Here we present Raman characterization of CrI3, and demonstrate that the main degradation pathway of CrI3 is the photocatalytic substitution of iodine by water. While simple encapsulation by Al2O3, PMMA and hexagonal BN (hBN) only leads to modest reduction in degradation rate, minimizing exposure of light markedly improves stability, and CrI3 sheets sandwiched between hBN layers are air-stable for >10 days. By monitoring the transfer characteristics of CrI3/graphene heterostructure over the course of degradation, we show that the aquachromium solution hole-dopes graphene. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 4 figures

Quantum Wires and Waveguides Formed in Graphene by Strain

Authors: Y. Wu, D. Zhai, C. Pan, B. Cheng, T. Taniguchi, K. Watanabe, N. Sandler, M. Bockrath

Abstract: Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up approaches are limited in size to a few nanometers. Fortunately, its mechanical flexibility raises the possibility of using strain to alter graphene's properties a… ▽ More Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up approaches are limited in size to a few nanometers. Fortunately, its mechanical flexibility raises the possibility of using strain to alter graphene's properties and create novel straintronic devices. Here, we report transport studies of nanowires created by linearly-shaped strained regions resulting from individual folds formed by layer transfer onto hexagonal boron nitride. Conductance measurements across the folds reveal Coulomb blockade signatures, indicating confined charges within these structures, which act as quantum dots. Along folds, we observe sharp features in traverse resistivity measurements, attributed to an amplification of the dot conductance modulations by a resistance bridge incorporating the device. Our data indicates ballistic transport up to ~1 um along the folds. Calculations using the Dirac model including strain are consistent with measured bound state energies and predict the existence of valley-polarized currents. Our results show that graphene folds can act as straintronic quantum wires. △ Less

Submitted 31 March, 2018; originally announced April 2018.

Journal ref: Nano Lett., 2018, 18, 64

Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures

Authors: Shi Che, Petr Stepanov, Supeng Ge, Yongjin Lee, Kevin Myhro, Yanmeng Shi, Ruoyu Chen, Ziqi Pi, Cheng Pan, Bin Cheng, Takashi Taniguchi, Kenji Watanabe, Marc Bockrath, Yafis Barlas, Roger Lake, Chun Ning Lau

Abstract: The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depend… ▽ More The use of relative twist angle between adjacent atomic layers in a van der Waals heterostructure, has emerged as a new degree of freedom to tune electronic and optoelectronic properties of devices based on 2D materials. Using ABA-stacked trilayer (TLG) graphene as the model system, we show that, contrary to conventional wisdom, the band structures of 2D materials are systematically tunable depending on their relative alignment angle between hexagonal BN (hBN), even at very large twist angles. Moreover, addition or removal of the hBN substrate results in an inversion of the K and K' valley in TLG's lowest Landau level (LL). Our work illustrates the critical role played by substrates in van der Waals heterostructures and opens the door towards band structure modification and valley control via substrate and twist angle engineering. △ Less

Submitted 9 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. Lett. 125, 246401 (2020)

Long-Distance Spin Transport Through a Graphene Quantum Hall Antiferromagnet

Authors: Petr Stepanov, Shi Che, Dmitry Shcherbakov, Jiawei Yang, Kevin Thilahar, Greyson Voigt, Marc W. Bockrath, Dmitry Smirnov, Kenji Watanabe, Takashi Taniguchi, Roger K. Lake, Yafis Barlas, Allan H. MacDonald, Chun Ning Lau

Abstract: Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical manipulation of antiferromagnetic order are much sought-after goals of spintronics research. Here, we report the first experimental evidence of robust lon… ▽ More Antiferromagnetic insulators (AFMI) are robust against stray fields, and their intrinsic dynamics could enable ultrafast magneto-optics and ultrascaled magnetic information processing. Low dissipation, long distance spin transport and electrical manipulation of antiferromagnetic order are much sought-after goals of spintronics research. Here, we report the first experimental evidence of robust long-distance spin transport through an AFMI, in our case the gate-controlled, canted antiferromagnetic (CAF) state that appears at the charge neutrality point of graphene in the presence of an external magnetic field. Utilizing gate-controlled quantum Hall (QH) edge states as spin-dependent injectors and detectors, we observe large, non-local electrical signals across a 5 micron-long, insulating channel only when it is biased into the nu=0 CAF state. Among possible transport mechanisms, spin superfluidity in an antiferromagnetic state gives the most consistent interpretation of the non-local signal's dependence on magnetic field, temperature and filling factors. This work also demonstrates that graphene in the QH regime is a powerful model system for fundamental studies of antiferromagnetic, and in the case of a large in-plane field, ferromagnetic spintronics. △ Less

Submitted 22 January, 2018; originally announced January 2018.

Journal ref: Nature Physics (2018)

Approaching quantum anomalous Hall effect in proximity-coupled YIG/graphene/h-BN sandwich structure

Authors: Chi Tang, Bin Cheng, Mohammed Aldosary, Zhiyong Wang, Zilong Jiang, K. Watanabe, T. Taniguchi, Marc Bockrath, Jing Shi

Abstract: Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions can be acquired by coupling graphene to a magnetic insulator (MI) as revealed by the anomalous Hall effect. Here, we show enhanced magnetic proximity coupling b… ▽ More Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions can be acquired by coupling graphene to a magnetic insulator (MI) as revealed by the anomalous Hall effect. Here, we show enhanced magnetic proximity coupling by sandwiching graphene between a ferrimagnetic insulator yttrium iron garnet (YIG) and hexagonal-boron nitride (h-BN) which also serves as a top gate dielectric. By sweeping the top-gate voltage, we observe Fermi level-dependent anomalous Hall conductance. As the Dirac point is approached from both electron and hole sides, the anomalous Hall conductance reaches 1/4 of the quantum anomalous Hall conductance 2e2/h. The exchange coupling strength is determined to be as high as 27 meV from the transition temperature of the induced magnetic phase. YIG/graphene/h-BN is an excellent heterostructure for demonstrating proximity-induced interactions in two-dimensional electron systems. △ Less

Submitted 11 October, 2017; originally announced October 2017.

Surface Transport and Quantum Hall Effect in Ambipolar Black Phosphorus Double Quantum Wells

Authors: Son Tran, Jiawei Yang, Nathaniel Gillgren, Timothy Espiritu, Yanmeng Shi, Kenji Watanabe, Takashi Taniguchi, Seongphill Moon, Hongwoo Baek, Dmitry Smirnov, Marc Bockrath, Ruoyu Chen, Chun Ning Lau

Abstract: Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and exciton condensation. Here we demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contra… ▽ More Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and exciton condensation. Here we demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to tradition QWs, each 2D layer is ambipolar, and can be tuned into n-doped, p-doped or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with enhanced Lande g-factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double or wide QWs with unusual properties such as high anisotropy. △ Less

Submitted 26 March, 2017; v1 submitted 14 March, 2017; originally announced March 2017.

Journal ref: Science Advances 3, e1603179 (2017)

Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS$_2$

Authors: Bowen Yang, Min-Feng Tu, Jeongwoo Kim, Yong Wu, Hui Wang, Jason Alicea, Ruqian Wu, Marc Bockrath, Jing Shi

Abstract: We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin-orbit coupling (SOC) in WS$_2$-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene flake, WAL in WS$_2$-covered graphene occurs over a wide range of carrier densities on both electron and hole sides. At high carrier densities, we estimate the R… ▽ More We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin-orbit coupling (SOC) in WS$_2$-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene flake, WAL in WS$_2$-covered graphene occurs over a wide range of carrier densities on both electron and hole sides. At high carrier densities, we estimate the Rashba SOC relaxation rate to be $\sim 0.2 \rm{ps}^{-1}$ and show that it can be tuned by transverse electric fields. In addition to the Rashba SOC, we also predict the existence of a `valley-Zeeman' SOC from first-principles calculations. The interplay between these two SOC's can open a non-topological but interesting gap in graphene; in particular, zigzag boundaries host four sub-gap edge states protected by time-reversal and crystalline symmetries. The graphene/WS$_2$ system provides a possible platform for these novel edge states. △ Less

Submitted 15 July, 2016; originally announced July 2016.

Comments: 5+4 pages, 4+5 figures

Journal ref: 2D Mater. 3, 031012 (2016)

Tunable plasmonic reflection by bound 1D electron states in a 2D Dirac metal

Authors: Bor-Yuan Jiang, Guangxin Ni, Cheng Pan, Zhe Fei, Bin Cheng, Chun Ning Lau, Marc Bockrath, Dimitri N. Basov, Michael M. Fogler

Abstract: We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical conductivity caused by optical transitions involving these bound states. We propose that the bound states can be systematically created, controlled, and liquidate… ▽ More We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical conductivity caused by optical transitions involving these bound states. We propose that the bound states can be systematically created, controlled, and liquidated by an ultranarrow electrostatic gate. Using infrared nanoimaging, we obtain experimental evidence for the locally enhanced conductivity of graphene induced by a carbon nanotube gate, which supports this theoretical concept. △ Less

Submitted 15 June, 2016; v1 submitted 9 February, 2016; originally announced February 2016.

Comments: 14 pages, 12 figures, submitted to PRL

Journal ref: Phys. Rev. Lett. 117, 086801 (2016)

Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures

Authors: Nathaniel Gillgren, Darshana Wickramaratne, Yanmeng Shi, Tim Espiritu, Jiawei Yang, Jin Hu, Jiang Wei, Xue Liu, Zhiqiang Mao, Kenji Watanabe, Takashi Taniguchi, Marc Bockrath, Yafis Barlas, Roger K. Lake, Chun Ning Lau

Abstract: As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >3… ▽ More As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >300 hours, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 $cm^2$/Vs. At low temperatures, we observe gate-tunable Shubnikov de Haas (SdH) magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor ~2. The cyclotron mass of few-layer phosphorene holes is determined to increase from 0.25 to 0.31 $m_e$ as the Fermi level moves towards the valence band edge. Our results underscore the potential of few-layer phosphorene (FLP) as both a platform for novel 2D physics and an electronic material for semiconductor applications. △ Less

Submitted 3 December, 2014; v1 submitted 1 December, 2014; originally announced December 2014.

Comments: minor correction of typos, equations and references

Journal ref: 2D Materials, 2, 011001 (2015)

Transport Measurement of Landau level Gaps in Bilayer Graphene

Authors: J. Velasco Jr., Y. Lee, Z. Zhao, Lei Jing, P. Kratz, Marc Bockrath, C. N. Lau

Abstract: Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with high mobilities in the quantum Hall regime. By using bias as a spectroscopic tool, we measure the gap Δでるた for the quantum Hall (QH) state at filling factor νにゅー={\pm… ▽ More Landau level gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with high mobilities in the quantum Hall regime. By using bias as a spectroscopic tool, we measure the gap Δでるた for the quantum Hall (QH) state at filling factor νにゅー={\pm}4 and -2. The single-particle gap for νにゅー=4 scales linearly with magnetic field B and is independent of the out-of-plane electric field E. For the symmetry-broken νにゅー=-2 state, the measured values of gap are 1.1 meV/T and 0.17 meV/T for singly-gated geometry and dual-gated geometry at E=0, respectively. The difference between the two values arises from the E-dependence of the gap, suggesting that the νにゅー=-2 state is layer polarized. Our studies provide the first measurements of the gaps of the broken symmetry QH states in BLG with well-controlled E, and establish a robust method that can be implemented for studying similar states in other layered materials. △ Less

Submitted 14 January, 2014; v1 submitted 14 March, 2013; originally announced March 2013.

Comments: revised figures and discussion

Journal ref: Nano Letters, 14, 1324 (2014)

Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

Authors: Hang Zhang, Wenzhong Bao, Zeng Zhao, Jhao-Wun Huang, Brian Standley, Gang Liu, Fenglin Wang, Philip Kratz, Lei Jing, Marc Bockrath, Chun Ning Lau

Abstract: Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of 2.5V~4.5V corresponding to an ON pulse and voltages ~8V corresponding to OFF pulses. Electron microscope imaging of the devices shows that the graphene sheets typica… ▽ More Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of 2.5V~4.5V corresponding to an ON pulse and voltages ~8V corresponding to OFF pulses. Electron microscope imaging of the devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large. The switching rate is strongly temperature dependent, which rules out a purely electromechanical switching mechanism. This observed switching in suspended graphene devices strongly suggests a switching mechanism via atomic movement and/or chemical rearrangement, and underscores the potential of all-carbon devices for integration with graphene electronics. △ Less

Submitted 1 May, 2012; originally announced May 2012.

Comments: in situ SEM videos are available on Nano letters website

Journal ref: Nano Lett., 2012, 12 (4), pp 1772-1775

Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene

Authors: Wenzhong Bao, Jairo Velasco Jr, Fan Zhang, Lei Jing, Brian Standley, Dmitry Smirnov, Marc Bockrath, Allan MacDonald, Chun Ning Lau

Abstract: Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a large number of singly- and doubly-gated bilayer graphene (BLG) devices, we show that an insulating state appears only in devices with high mobility and low extri… ▽ More Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a large number of singly- and doubly-gated bilayer graphene (BLG) devices, we show that an insulating state appears only in devices with high mobility and low extrinsic doping. This insulating state has an associated transition temperature Tc~5K and an energy gap of ~3 meV, thus strongly suggesting a gapped broken symmetry state that is destroyed by very weak disorder. The transition to the intrinsic broken symmetry state can be tuned by disorder, out-of-plane electric field, or carrier density. △ Less

Submitted 15 February, 2012; originally announced February 2012.

Journal ref: Proc. Nat. Acad. Sci., 109, 10802 (2012)

Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene

Authors: J. Velasco Jr., L. Jing, W. Bao, Y. Lee, P. Kratz, V. Aji, M. Bockrath, C. N. Lau, C. Varma, R. Stillwell, D. Smirnov, Fan Zhang, J. Jung, A. H. MacDonald

Abstract: The flat bands in bilayer graphene(BLG) are sensitive to electric fields E\bot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron physics[1-5]. Theories[6-16] have suggested the possibility of a variety of interesting broken symmetry states, some characterized by spontaneous mass gaps, whe… ▽ More The flat bands in bilayer graphene(BLG) are sensitive to electric fields E\bot directed between the layers, and magnify the electron-electron interaction effects, thus making BLG an attractive platform for new two-dimensional (2D) electron physics[1-5]. Theories[6-16] have suggested the possibility of a variety of interesting broken symmetry states, some characterized by spontaneous mass gaps, when the electron-density is at the carrier neutrality point (CNP). The theoretically proposed gaps[6,7,10] in bilayer graphene are analogous[17,18] to the masses generated by broken symmetries in particle physics and give rise to large momentum-space Berry curvatures[8,19] accompanied by spontaneous quantum Hall effects[7-9]. Though recent experiments[20-23] have provided convincing evidence of strong electronic correlations near the CNP in BLG, the presence of gaps is difficult to establish because of the lack of direct spectroscopic measurements. Here we present transport measurements in ultra-clean double-gated BLG, using source-drain bias as a spectroscopic tool to resolve a gap of ~2 meV at the CNP. The gap can be closed by an electric field E\bot \sim13 mV/nm but increases monotonically with a magnetic field B, with an apparent particle-hole asymmetry above the gap, thus providing the first mapping of the ground states in BLG. △ Less

Submitted 8 August, 2011; originally announced August 2011.

Comments: 4 figures

Journal ref: Nature Nanotechnology, 7, 156 (2012)

Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene

Authors: W. Bao, L. Jing, Y. Lee, J. Velasco Jr., P. Kratz, D. Tran, B. Standley, M. Aykol, S. B. Cronin, D. Smirnov, M. Koshino, E. McCann, M. Bockrath, C. N. Lau

Abstract: In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with different stacking orders. At the Dirac point, ABA-stacked TLG remains metallic while the ABC counterpart becomes insulating. The latter exhibits a gap-like dI/dV cha… ▽ More In a multi-layer electronic system, stacking order provides a rarely-explored degree of freedom for tuning its electronic properties. Here we demonstrate the dramatically different transport properties in trilayer graphene (TLG) with different stacking orders. At the Dirac point, ABA-stacked TLG remains metallic while the ABC counterpart becomes insulating. The latter exhibits a gap-like dI/dV characteristics at low temperature and thermally activated conduction at higher temperatures, indicating an intrinsic gap ~6 meV. In magnetic fields, in addition to an insulating state at filling factor νにゅー=0, ABC TLG exhibits quantum Hall plateaus at νにゅー=-30, \pm 18, \pm 9, each of which splits into 3 branches at higher fields. Such splittings are signatures of the Lifshitz transition induced by trigonal warping, found only in ABC TLG, and in semi-quantitative agreement with theory. Our results underscore the rich interaction-induced phenomena in trilayer graphene with different stacking orders, and its potential towards electronic applications. △ Less

Submitted 20 January, 2012; v1 submitted 31 March, 2011; originally announced March 2011.

Comments: minor revision; published version

Journal ref: Nature Physics 7, 948--952 (2011)

Quantum Transport and Field Induced Insulating States in Bilayer Graphene pnp Junctions

Authors: Lei Jing, Jairo Velasco Jr., Philip Kratz, Gang Liu, Wenzhong Bao, Marc Bockrath, Chun Ning Lau

Abstract: We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to 20,000 at 260mK. Within the band gap, the conductance decreases exponentially by 3 orders of magnitude with increasing electric field, and can be accounted for by va… ▽ More We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to 20,000 at 260mK. Within the band gap, the conductance decreases exponentially by 3 orders of magnitude with increasing electric field, and can be accounted for by variable range hopping with a gate-tunable density of states, effective mass, and localization length. At large B, we observe quantum Hall conductance with fractional values, which arise from equilibration of edge states between differentially-doped regions, and the presence of an insulating state at filling factor νにゅー=0. Our work underscores the importance of bilayer graphene for both fundamental interest and technological applications. △ Less

Submitted 23 September, 2010; v1 submitted 23 September, 2010; originally announced September 2010.

Comments: 4 figures, to appear in Nano Lett. Minor typos corrected

Strain-induced pseudo-magnetic fields and charging effects on CVD-grown graphene

Authors: N. -C. Yeh, M. L. Teague, S. Yeom, B. L. Standley, D. A. Boyd, M. W. Bockrath

Abstract: Atomically resolved imaging and spectroscopic characteristics of graphene grown by chemical vapor deposition (CVD) on copper are investigated by means of scanning tunneling microscopy and spectroscopy (STM/STS). For CVD-grown graphene remaining on the copper substrate, the monolayer carbon structures exhibit ripples and appear strongly strained, with different regions exhibiting different lattice… ▽ More Atomically resolved imaging and spectroscopic characteristics of graphene grown by chemical vapor deposition (CVD) on copper are investigated by means of scanning tunneling microscopy and spectroscopy (STM/STS). For CVD-grown graphene remaining on the copper substrate, the monolayer carbon structures exhibit ripples and appear strongly strained, with different regions exhibiting different lattice structures and electronic density of states (DOS). In particular, ridges appear along the boundaries of different lattice structures, which exhibit excess charging effects. Additionally, the large and non-uniform strain induces pseudo-magnetic field up to ~ 50 Tesla, as manifested by the integer and fractional pseudo-magnetic field quantum Hall effect (IQHE and FQHE) in the DOS of graphene. In contrast, for graphene transferred from copper to SiO2 substrates after the CVD growth, the average strain on the whole is reduced, so are the corresponding charging effects and pseudo-magnetic fields except for sample areas near topographical ridges. These findings suggest feasible "strain engineering" of the electronic states of graphene by proper design of the substrates and growth conditions. △ Less

Submitted 26 March, 2011; v1 submitted 31 August, 2010; originally announced September 2010.

Comments: 10 pages, 9 figures. Accepted for publication in a special issue of Surface Science: "Graphene Surfaces and Interfaces". Contac author: Nai-Chang Yeh (ncyeh@caltech.edu)

Journal ref: Surface Science 605, 1649-1656 (2011)

Probing Charging and Localization in the Quantum Hall Regime by Graphene pnp Junctions

Authors: Jairo Velasco Jr., Gang Liu, Lei Jing, Philip Kratz, Wenzhong Bao, Marc Bockrath, Chun Ning Lau

Abstract: Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines that are parallel to those of the adjacent plateaus, with different temperature dependences for the conductance peaks and valleys. These fluctuations arise fr… ▽ More Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines that are parallel to those of the adjacent plateaus, with different temperature dependences for the conductance peaks and valleys. These fluctuations arise from Coulomb-induced charging of electron- or hole-doped localized states when the device bulk is delocalized, underscoring the importance of electronic interactions in graphene in the QH regime. △ Less

Submitted 16 December, 2009; originally announced December 2009.

Giant Raman Intensity Modulation in Pristine Carbon Nanotubes

Authors: Adam W. Bushmaker, Vikram V. Deshpande, Scott Hsieh, Marc W. Bockrath, Stephen B. Cronin

Abstract: Large variations of up to two orders of magnitude are observed in the Raman intensity of pristine, suspended quasi-metallic single-walled carbon nanotubes in response to applied gate potentials. No change in the resonance condition is observed, and all Raman bands exhibit the same changes in intensity, regardless of phonon energy or laser excitation energy. The effect is not observed in semicond… ▽ More Large variations of up to two orders of magnitude are observed in the Raman intensity of pristine, suspended quasi-metallic single-walled carbon nanotubes in response to applied gate potentials. No change in the resonance condition is observed, and all Raman bands exhibit the same changes in intensity, regardless of phonon energy or laser excitation energy. The effect is not observed in semiconducting nanotubes. The electronic energy gaps correlate with the drop in the Raman intensity, and the recently observed Mott insulating behavior is suggested as a possible explanation for this effect. △ Less

Submitted 5 May, 2009; originally announced May 2009.

Evidence for Strain-Induced Local Conductance Modulations in Single-Layer Graphene on SiO2

Authors: M. L. Teague, A. P. Lai, J. Velasco, C. R. Hughes, A. D. Beyer, M. W. Bockrath, C. N. Lau, N. -C. Yeh

Abstract: Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-laye… ▽ More Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-layer graphene on SiO2 substrates from scanning tunneling microscopic (STM) studies. We find that strained graphene exhibits parabolic, U-shaped conductance vs. bias voltage spectra rather than the V-shaped spectra expected for Dirac fermions, whereas V-shaped spectra are recovered in regions of relaxed graphene. Strain maps derived from the STM studies further reveal direct correlation with the local tunneling conductance. These results are attributed to a strain-induced frequency increase in the out-of-plane phonon mode that mediates the low-energy inelastic charge tunneling into graphene. △ Less

Submitted 13 March, 2009; originally announced March 2009.

Comments: 5 pages, 4 figures. Corresponding author: Nai-Chang Yeh (ncyeh@caltech.edu)

Journal ref: Nano Letters Vol. 9, No. 7, 2542 - 2546 (2009)

Spatially-Resolved Temperature Measurements of Electrically-Heated Carbon Nanotubes

Authors: Vikram V. Deshpande, Scott Hsieh, Adam W. Bushmaker, Marc Bockrath, Stephen B. Cronin

Abstract: Spatially-resolved Raman spectra of individual pristine suspended carbon nanotubes are observed under electrical heating. The Raman G+ and G- bands show unequal temperature profiles. The preferential heating is more pronounced in short nanotubes (2 um) than in long nanotubes (5 um). These results are understood in terms of the decay and thermalization of non-equilibrium phonons, revealing the me… ▽ More Spatially-resolved Raman spectra of individual pristine suspended carbon nanotubes are observed under electrical heating. The Raman G+ and G- bands show unequal temperature profiles. The preferential heating is more pronounced in short nanotubes (2 um) than in long nanotubes (5 um). These results are understood in terms of the decay and thermalization of non-equilibrium phonons, revealing the mechanism of thermal transport in these devices. The measurements also enable a direct estimate of thermal contact resistances and the spatial variation of thermal conductivity. △ Less

Submitted 19 February, 2009; originally announced February 2009.

Comments: To appear in Phys. Rev. Lett

Direct Observation of Born-Oppenheimer Approximation Breakdown in Carbon Nanotubes

Authors: Adam W. Bushmaker, Vikram V. Deshpande, Scott Hsieh, Marc W. Bockrath, Stephen B. Cronin

Abstract: Raman spectra and electrical conductance of individual, pristine, suspended, metallic single-walled carbon nanotubes are measured under applied gate potentials. The G- band is observed to downshift with small applied gate voltages, with the minima occurring at EF = +/- 1/2 Ephonon, contrary to adiabatic predictions. A subsequent upshift in the Raman frequency at higher gate voltages results in a… ▽ More Raman spectra and electrical conductance of individual, pristine, suspended, metallic single-walled carbon nanotubes are measured under applied gate potentials. The G- band is observed to downshift with small applied gate voltages, with the minima occurring at EF = +/- 1/2 Ephonon, contrary to adiabatic predictions. A subsequent upshift in the Raman frequency at higher gate voltages results in a 'W'-shaped Raman shift profile that agrees well with a non-adiabatic phonon renormalization model. This behavior constitutes the first experimental confirmation of the theoretically predicted breakdown of the Born-Oppenheimer approximation in individual single walled carbon nanotubes. △ Less

Submitted 19 January, 2009; originally announced January 2009.

Sagnac interference in Carbon nanotubes

Authors: Waheb Bishara, Gil Refael, Marc Bockrath

Abstract: The Sagnac interference mode arises when two interfering counterpropogating beams traverse a loop, but with their velocities detuned by a small amount $2u$, with $v_{R/L}=v_F\pm u$. In this paper we perform a perturbative non-equilibrium calculation of Sagnac interference in single channel wires as well as armchair nanotube loops. We study the dependence of the Sagnac conductance oscillations on… ▽ More The Sagnac interference mode arises when two interfering counterpropogating beams traverse a loop, but with their velocities detuned by a small amount $2u$, with $v_{R/L}=v_F\pm u$. In this paper we perform a perturbative non-equilibrium calculation of Sagnac interference in single channel wires as well as armchair nanotube loops. We study the dependence of the Sagnac conductance oscillations on temperature and interactions. We find that the Sagnac interference is not destroyed by strong interactions, but becomes weakly dependent on the velocity detuning $u$. In armchairs nanotubes with typical interaction strength, $0.25 \leq g \leq 0.5$, we find that the necessary temperature for observing the interference effect, $T_{SAG}$ is also only weakly dependent on the interaction, and is enhanced by a factor of 8 relative to the temperature necessary for observing Fabry-Perot interference in the same system, $T_{FP}$. △ Less

Submitted 16 June, 2008; originally announced June 2008.

Comments: 12 pages, 8 figures

The One-Dimensional Wigner Crystal in Carbon Nanotubes

Authors: Vikram V. Deshpande, Marc Bockrath

Abstract: Electron-electron interactions strongly affect the behavior of low-dimensional systems. In one dimension (1D), arbitrarily weak interactions qualitatively alter the ground state producing a Luttinger liquid (LL) which has now been observed in a number of experimental systems. Interactions are even more important at low carrier density, and in the limit when the long-ranged Coulomb potential is t… ▽ More Electron-electron interactions strongly affect the behavior of low-dimensional systems. In one dimension (1D), arbitrarily weak interactions qualitatively alter the ground state producing a Luttinger liquid (LL) which has now been observed in a number of experimental systems. Interactions are even more important at low carrier density, and in the limit when the long-ranged Coulomb potential is the dominant energy scale, the electron liquid is expected to become a periodically ordered solid known as the Wigner crystal. In 1D, the Wigner crystal has been predicted to exhibit novel spin and magnetic properties not present in an ordinary LL. However, despite recent progress in coupled quantum wires, unambiguous experimental demonstration of this state has not been possible due to the role of disorder. Here, we demonstrate using low-temperature single-electron transport spectroscopy that a hole gas in low-disorder carbon nanotubes with a band gap is a realization of the 1D Wigner crystal. Our observation can lead to unprecedented control over the behavior of the spatially separated system of carriers, and could be used to realize solid state quantum computing with long coherence times. △ Less

Submitted 2 October, 2007; originally announced October 2007.

Sagnac interference in Carbon nanotube loops

Authors: Gil Refael, Jinseong Heo, Marc Bockrath

Abstract: In this paper we study electron interference in nanotube loops. The conductance as a function of the applied voltage is shown to oscillate due to interference between electron beams traversing the loop in two opposite directions, with slightly different velocities. The period of these oscillations with respect to the gate voltage, as well as the temperatures required for the effect to appear, ar… ▽ More In this paper we study electron interference in nanotube loops. The conductance as a function of the applied voltage is shown to oscillate due to interference between electron beams traversing the loop in two opposite directions, with slightly different velocities. The period of these oscillations with respect to the gate voltage, as well as the temperatures required for the effect to appear, are shown to be much larger than those of the related Fabry-Perot interference. This effect is analogous to the Sagnac effect in light interferometers. We calculate the effect of interactions on the period of the oscillations, and show that even though interactions destroy much of the near-degeneracy of velocities in the symmetric spin channel, the slow interference effects survive. △ Less

Submitted 17 August, 2006; originally announced August 2006.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 98, 246803 (2007).

Elastomeric carbon nanotube circuits for local strain sensing

Authors: H. Maune, M. Bockrath

Abstract: We use elastomeric polydimethylsiloxane substrates to strain single-walled carbon nanotubes and modulate their electronic properties, with the aim of developing flexible materials that can sense local strain. We demonstrate micron-scale nanotube devices that can be cycled repeatedly through strains as high as 20% while providing reproducible local strain transduction by via the device resistance… ▽ More We use elastomeric polydimethylsiloxane substrates to strain single-walled carbon nanotubes and modulate their electronic properties, with the aim of developing flexible materials that can sense local strain. We demonstrate micron-scale nanotube devices that can be cycled repeatedly through strains as high as 20% while providing reproducible local strain transduction by via the device resistance. We also compress individual nanotubes, and find they undergo an undulatory distortion with a characteristic spatial period of 100-200 nm. The observed period can be understood by the mechanical properties of nanotubes and the substrate in conjunction with continuum elasticity theory. These could potentially be used to create superlattices within individual nanotubes, enabling novel devices and applications. △ Less

Submitted 16 June, 2006; originally announced June 2006.

Ballistic Phonon Thermal Transport in Multi-Walled Carbon Nanotubes

Authors: H. -Y. Chiu, V. V. Deshpande, H. W. Ch. Postma, C. N. Lau, C. Mikó, L. Forró, M. Bockrath

Abstract: We report electrical transport experiments using the phenomenon of electrical breakdown to perform thermometry that probe the thermal properties of individual multi-walled nanotubes. Our results show that nanotubes can readily conduct heat by ballistic phonon propagation, reaching a quantum-mechanical limit to thermal conductance. We determine the thermal conductance quantum, the ultimate limit… ▽ More We report electrical transport experiments using the phenomenon of electrical breakdown to perform thermometry that probe the thermal properties of individual multi-walled nanotubes. Our results show that nanotubes can readily conduct heat by ballistic phonon propagation, reaching a quantum-mechanical limit to thermal conductance. We determine the thermal conductance quantum, the ultimate limit to thermal conductance for a single phonon channel, and find good agreement with theoretical calculations. Moreover, our results suggest a breakdown mechanism of thermally activated C-C bond breaking coupled with the electrical stress of carrying ~10^12 A/m^2. We also demonstrate a current-driven self-heating technique to improve the conductance of nanotube devices dramatically. △ Less

Submitted 30 June, 2005; originally announced July 2005.

Plastic Deformations in Mechanically Strained Single-Walled Carbon Nanotubes

Authors: D. Bozovic, M. Bockrath, J. H. Hafner, C. M. Lieber, H. Park, M. Tinkham

Abstract: AFM manipulation was used to controllably stretch individual metallic single-walled carbon nanotubes (SWNTs). We have found that SWNTs can sustain elongations as great as 30% without breaking. Scanned gate microscopy and transport measurements were used to probe the effects of the mechanical strain on the SWNT electronic properties, which revealed a strain-induced increase in intra-tube electron… ▽ More AFM manipulation was used to controllably stretch individual metallic single-walled carbon nanotubes (SWNTs). We have found that SWNTs can sustain elongations as great as 30% without breaking. Scanned gate microscopy and transport measurements were used to probe the effects of the mechanical strain on the SWNT electronic properties, which revealed a strain-induced increase in intra-tube electronic scattering above a threshold strain of ~5-10%. These findings are consistent with theoretical calculations predicting the onset of plastic deformation and defect formation in carbon nanotubes. △ Less

Submitted 18 October, 2002; originally announced October 2002.

Quantum Phase Slips in Superconducting Nanowires

Authors: C. N. Lau, N. Markovic, M. Bockrath, A. Bezryadin, M. Tinkham

Abstract: We have measured the resistance vs. temperature of more than 20 superconducting nanowires with nominal widths ranging from 10 to 22 nm and lengths from 100 nm to 1050 nm. With decreasing cross-sectional areas, the wires display increasingly broad resistive transitions. The data are in very good agreement with a model that includes both thermally activated phase slips close to Tc and quantum phas… ▽ More We have measured the resistance vs. temperature of more than 20 superconducting nanowires with nominal widths ranging from 10 to 22 nm and lengths from 100 nm to 1050 nm. With decreasing cross-sectional areas, the wires display increasingly broad resistive transitions. The data are in very good agreement with a model that includes both thermally activated phase slips close to Tc and quantum phase slips (QPS) at low temperatures, but disagree with an earlier model based on a critical value of R_n/Rq. Our measurements provide strong evidence for QPS in thin superconducting wires. △ Less

Submitted 28 September, 2001; originally announced October 2001.

Comments: 9 pages, 3 figures

Luttinger liquid behavior in metallic carbon nanotubes

Authors: R. Egger, A. Bachtold, M. Fuhrer, M. Bockrath, D. Cobden, P. McEuen

Abstract: Coulomb interaction effects have pronounced consequences in carbon nanotubes due to their 1D nature. In particular, correlations imply the breakdown of Fermi liquid theory and typically lead to Luttinger liquid behavior characterized by pronounced power-law suppression of the transport current and the density of states, and spin-charge separation. This paper provides a review of the current unde… ▽ More Coulomb interaction effects have pronounced consequences in carbon nanotubes due to their 1D nature. In particular, correlations imply the breakdown of Fermi liquid theory and typically lead to Luttinger liquid behavior characterized by pronounced power-law suppression of the transport current and the density of states, and spin-charge separation. This paper provides a review of the current understanding of non-Fermi liquid effects in metallic single-wall nanotubes (SWNTs). We provide a self-contained theoretical discussion of electron-electron interaction effects and show that the tunneling density of states exhibits power-law behavior. The power-law exponent depends on the interaction strength parameter $g$ and on the geometry of the setup. We then show that these features are observed experimentally by measuring the tunneling conductance of SWNTs as a function of temperature and voltage. These tunneling experiments are obtained by contacting metallic SWNTs to two nanofabricated gold electrodes. Electrostatic force microscopy (EFM) measurements show that the measured resistance is due to the contact resistance from the transport barrier formed at the electrode/nanotube junction. These EFM measurements show also the ballistic nature of transport in these SWNTs. While charge transport can be nicely attributed to Luttinger liquid behavior, spin-charge separation has not been observed so far. We briefly describe a transport experiment that could provide direct evidence for spin-charge separation. △ Less

Submitted 1 August, 2000; originally announced August 2000.

Comments: Review, to appear in {\sl Interacting Electrons in Nanostructures}, edited by R. Haug and H. Schoeller (Springer); 22 pages, 7 figures; style files incl

Disorder, pseudospins, and backscattering in carbon nanotubes

Authors: Paul L. McEuen, Marc Bockrath, David H. Cobden, Young-Gui Yoon, Steven G. Louie

Abstract: We address the effects of disorder on the conducting properties of metal and semiconducting carbon nanotubes. Experimentally, the mean free path is found to be much larger in metallic tubes than in doped semiconducting tubes. We show that this result can be understood theoretically if the disorder potential is long-ranged. The effects of a pseudospin index that describes the internal sublattice… ▽ More We address the effects of disorder on the conducting properties of metal and semiconducting carbon nanotubes. Experimentally, the mean free path is found to be much larger in metallic tubes than in doped semiconducting tubes. We show that this result can be understood theoretically if the disorder potential is long-ranged. The effects of a pseudospin index that describes the internal sublattice structure of the states lead to a suppression of scattering in metallic tubes, but not in semiconducting tubes. This conclusion is supported by tight-binding calculations. △ Less

Submitted 3 June, 1999; originally announced June 1999.

Comments: four pages

One-dimensional transport in bundles of single-walled carbon nanotubes

Authors: David H. Cobden, Jesper Nygard, Marc Bockrath, Paul L. McEuen

Abstract: We report measurements of the temperature and gate voltage dependence for individual bundles (ropes) of single-walled nanotubes. When the conductance is less than about e^2/h at room temperature, it is found to decrease as an approximate power law of temperature down to the region where Coulomb blockade sets in. The power-law exponents are consistent with those expected for electron tunneling in… ▽ More We report measurements of the temperature and gate voltage dependence for individual bundles (ropes) of single-walled nanotubes. When the conductance is less than about e^2/h at room temperature, it is found to decrease as an approximate power law of temperature down to the region where Coulomb blockade sets in. The power-law exponents are consistent with those expected for electron tunneling into a Luttinger liquid. When the conductance is greater than e^2/h at room temperature, it changes much more slowly at high temperatures, but eventually develops very large fluctuations as a function of gate voltage when sufficiently cold. We discuss the interpretation of these results in terms of transport through a Luttinger liquid. △ Less

Submitted 13 April, 1999; originally announced April 1999.

Comments: 5 pages latex including 3 figures, for proceedings of IWEPNM 99 (Kirchberg)

Luttinger Liquid Behavior in Carbon Nanotubes

Authors: M. Bockrath, D. H. Cobden, J. Lu, A. G. Rinzler, R. E. Smalley, L. Balents, P. L. Mceuen

Abstract: An interacting one-dimensional (1D) electron system is predicted to behave very differently than its higher-dimensional counterparts. Coulomb interactions strongly modify the properties away from those of a Fermi liquid, resulting in a Luttinger liquid (LL) characterized by a power-law vanishing of the density of states at the Fermi level. Experiments on one-dimensional semiconductor wires and f… ▽ More An interacting one-dimensional (1D) electron system is predicted to behave very differently than its higher-dimensional counterparts. Coulomb interactions strongly modify the properties away from those of a Fermi liquid, resulting in a Luttinger liquid (LL) characterized by a power-law vanishing of the density of states at the Fermi level. Experiments on one-dimensional semiconductor wires and fractional quantum Hall conductors have been interpreted using this picture, but questions remain about the connection between theory and experiment. Recently, single-walled carbon nanotubes (SWNTs) have emerged as a new type of 1D conductor that may exhibit LL behavior. Here we present measurements of the conductance of individual ropes of such SWNTs as a function of temperature and voltage. Power law behavior as a function of temperature or bias voltage is observed: G~ T^a and dI/dV ~ V^a. Both the power-law functional forms and the inferred exponents are in good agreement with theoretical predictions for tunneling into a LL. △ Less

Submitted 14 December, 1998; originally announced December 1998.

Spin splitting and even-odd effects in carbon nanotubes

Authors: David H. Cobden, Marc Bockrath, Paul L. McEuen, Andrew G. Rinzler, Richard E. Smalley

Abstract: The level spectrum of a single-walled carbon nanotube rope, studied by transport spectroscopy, shows Zeeman splitting in a magnetic field parallel to the tube axis. The pattern of splittings implies that the spin of the ground state alternates by 1/2 as consecutive electrons are added. Other aspects of the Coulomb blockade characteristics, including the current-voltage traces and peak heights, a… ▽ More The level spectrum of a single-walled carbon nanotube rope, studied by transport spectroscopy, shows Zeeman splitting in a magnetic field parallel to the tube axis. The pattern of splittings implies that the spin of the ground state alternates by 1/2 as consecutive electrons are added. Other aspects of the Coulomb blockade characteristics, including the current-voltage traces and peak heights, also show corresponding even-odd effects. △ Less

Submitted 15 April, 1998; originally announced April 1998.

Comments: Preprint, pdf format only, 4 pages including figures

Transport Spectroscopy of Single-Walled Carbon Nanotubes

Authors: David H. Cobden, Marc Bockrath, Nasreen Chopra, Alex Zettl, Paul L. McEuen, Andrew Rinzler, Andreas Thess, Richard E. Smalley

Abstract: We have performed transport spectroscopy on individual ropes of single-walled carbon nanotubes. We find that the levels are Zeeman split in a magnetic field, with a g-factor of 2.04 +- 0.05. The observed pattern of peak splittings indicates the parity of the number of electrons on the dot. In one device there are also signs of the presence of a second dot. We observe features which resemble anti… ▽ More We have performed transport spectroscopy on individual ropes of single-walled carbon nanotubes. We find that the levels are Zeeman split in a magnetic field, with a g-factor of 2.04 +- 0.05. The observed pattern of peak splittings indicates the parity of the number of electrons on the dot. In one device there are also signs of the presence of a second dot. We observe features which resemble anticrossings between quantum levels in the two dots, which may be formed from separate conducting nanotubes within the rope. △ Less

Submitted 11 October, 1997; originally announced October 1997.

Comments: 3 pages of Latex, plus one postscript file containing 4 figures, to appear in Proceedings of EP2DS 12 (Tokyo 1997)

Single Electron Transport in Ropes of Carbon Nanotube

Authors: Marc Bockrath, David H. Cobden, Paul L. McEuen, Nasreen G. Chopra, A. Zettl, Andreas Thess, R. E. Smalley

Abstract: We have measured the electrical properties of individual bundles, or "ropes" of single-walled carbon nanotubes. Below ~10 K, the low bias conductance is suppressed for voltages below a few millivolts. In addition, dramatic peaks are observed in the conductance as a function of a gate voltage that modulates the number of electrons in the rope. We interpret these results in terms of single electro… ▽ More We have measured the electrical properties of individual bundles, or "ropes" of single-walled carbon nanotubes. Below ~10 K, the low bias conductance is suppressed for voltages below a few millivolts. In addition, dramatic peaks are observed in the conductance as a function of a gate voltage that modulates the number of electrons in the rope. We interpret these results in terms of single electron charging and resonant tunneling through the quantized energy levels of the nanotubes comprising the rope. △ Less

Submitted 17 December, 1996; originally announced December 1996.

Comments: 4 pages of text plus 3 eps figures; submitted to Science