Effect of inelastic ion collisions on low-gain avalanche detectors explained by an A_Si-Si_i-defect mode
Authors:
Kevin Lauer,
Stephanie Reiß,
Aaron Flötotto,
Katharina Peh,
Dominik Bratek,
Robin Müller,
Dirk Schulze,
Wichard Beenken,
Erik Hiller,
Thomas Ortlepp,
Stefan Krischok
Abstract:
The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of…
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The acceptor removal phenomenon (ARP), which hampers the functionality of low-gain avalanche detectors (LGAD), is discussed in frame of the A_Si-Si_i-defect model. The assumption of fast diffusion of interstitial silicon is shown to be superfluous for the explanation of the B_Si-Si_i-defect formation under irradiation, particular at very low temperatures. The experimentally observed properties of the ARP are explained by the donor properties of the B_Si-Si_i-defect in its ground state. Additionally, low temperature photoluminescence spectra are reported for quenched boron doped silicon showing so far unidentified PL lines, which change due to well-known light-induced degradation (LID) treatments.
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Submitted 13 November, 2023;
originally announced November 2023.
