Showing 1–9 of 9 results for author: Catlow, C R A

Roadmap on Data-Centric Materials Science

Authors: Stefan Bauer, Peter Benner, Tristan Bereau, Volker Blum, Mario Boley, Christian Carbogno, C. Richard A. Catlow, Gerhard Dehm, Sebastian Eibl, Ralph Ernstorfer, Ádám Fekete, Lucas Foppa, Peter Fratzl, Christoph Freysoldt, Baptiste Gault, Luca M. Ghiringhelli, Sajal K. Giri, Anton Gladyshev, Pawan Goyal, Jason Hattrick-Simpers, Lara Kabalan, Petr Karpov, Mohammad S. Khorrami, Christoph Koch, Sebastian Kokott , et al. (36 additional authors not shown)

Abstract: Science is and always has been based on data, but the terms "data-centric" and the "4th paradigm of" materials research indicate a radical change in how information is retrieved, handled and research is performed. It signifies a transformative shift towards managing vast data collections, digital repositories, and innovative data analytics methods. The integration of Artificial Intelligence (AI) a… ▽ More Science is and always has been based on data, but the terms "data-centric" and the "4th paradigm of" materials research indicate a radical change in how information is retrieved, handled and research is performed. It signifies a transformative shift towards managing vast data collections, digital repositories, and innovative data analytics methods. The integration of Artificial Intelligence (AI) and its subset Machine Learning (ML), has become pivotal in addressing all these challenges. This Roadmap on Data-Centric Materials Science explores fundamental concepts and methodologies, illustrating diverse applications in electronic-structure theory, soft matter theory, microstructure research, and experimental techniques like photoemission, atom probe tomography, and electron microscopy. While the roadmap delves into specific areas within the broad interdisciplinary field of materials science, the provided examples elucidate key concepts applicable to a wider range of topics. The discussed instances offer insights into addressing the multifaceted challenges encountered in contemporary materials research. △ Less

Submitted 1 May, 2024; v1 submitted 1 February, 2024; originally announced February 2024.

Comments: Review, outlook, roadmap, perspective

Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb

Authors: J. Buckeridge, T. D. Veal, C. R. A. Catlow, D. O. Scanlon

Abstract: The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report hybrid density functional theory based calculations of the properties of intrinsic point defects in the two systems, including spin orbit coupling effects, which influence strongly their band structures. With the hybrid… ▽ More The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report hybrid density functional theory based calculations of the properties of intrinsic point defects in the two systems, including spin orbit coupling effects, which influence strongly their band structures. With the hybrid DFT approach we adopt, we obtain excellent agreement between our calculated band dispersions, structural, elastic and vibrational properties and available measurements. We compute point defect formation energies in both systems, finding that antisite disorder tends to dominate, apart from in GaSb under certain conditions, where cation vacancies can form in significant concentrations. Calculated self-consistent Fermi energies and equilibrium carrier and defect concentrations confirm the intrinsic $n$- and $p$-type behaviour of both materials under anion-rich and anion-poor conditions. Moreover, by computing the compensating defect concentrations due to the presence of ionised donors and acceptors, we explain the observed dopability of GaSb and InSb. △ Less

Submitted 30 July, 2019; originally announced July 2019.

Journal ref: Phys. Rev. B 100, 035207 (2019)

Donor and Acceptor Characteristics of Native Point Defects in GaN

Authors: Zijuan Xie, Yu Sui, John Buckeridge, C. Richard A. Catlow, Thomas W. Keal, Paul Sherwood, Aron Walsh, Matthew R. Farrow, David O. Scanlon, Scott M. Woodley, Alexey A. Sokol

Abstract: The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a comp… ▽ More The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals... △ Less

Submitted 3 May, 2019; v1 submitted 16 March, 2018; originally announced March 2018.

Comments: 19 pages, 10 figures, 5 tables

Electron counting in solids: oxidation states, partial charges and ionicity

Authors: Aron Walsh, Alexey A. Sokol, John Buckeridge, David O. Scanlon, C. Richard A. Catlow

Abstract: In this short viewpoint, we discuss the assignment of ionic charges in solids. We argue that formal oxidation states serve a useful function, and that absolute values of partial charges should be interpreted and applied with caution; the charge assigned can never be definitive and depends on the type of property studied and the type of analysis performed. Careful analysis can be used to avoid unph… ▽ More In this short viewpoint, we discuss the assignment of ionic charges in solids. We argue that formal oxidation states serve a useful function, and that absolute values of partial charges should be interpreted and applied with caution; the charge assigned can never be definitive and depends on the type of property studied and the type of analysis performed. Careful analysis can be used to avoid unphysical conclusions such as a recent report on the Ti(III) nature of Ti in stoichiometric TiO$_2$. △ Less

Submitted 17 April, 2017; originally announced April 2017.

Journal ref: Journal of Physical Chemistry Letters 8, 2074 (2017)

Anharmonicity in the high-temperature Cmcm phase of SnSe: soft modes and three-phonon interactions

Authors: Jonathan M. Skelton, Lee A. Burton, Stephen C. Parker, Aron Walsh, Chang-Eun Kim, Aloysius Soon, John Buckeridge, Alexey A. Sokol, C. Richard A. Catlow, Atsushi Togo, Isao Tanaka

Abstract: The layered semiconductor SnSe is one of the highest-performing thermoelectric materials known. We demonstrate, through a first-principles lattice-dynamics study, that the high-temperature Cmcm phase is a dynamic average over lower-symmetry minima separated by very small energetic barriers. Compared to the low-temperature Pnma phase, the Cmcm phase displays a phonon softening and enhanced three-ph… ▽ More The layered semiconductor SnSe is one of the highest-performing thermoelectric materials known. We demonstrate, through a first-principles lattice-dynamics study, that the high-temperature Cmcm phase is a dynamic average over lower-symmetry minima separated by very small energetic barriers. Compared to the low-temperature Pnma phase, the Cmcm phase displays a phonon softening and enhanced three-phonon scattering, leading to an anharmonic damping of the low-frequency modes and hence the thermal transport. We develop a renormalisation scheme to quantify the effect of the soft modes on the calculated properties, and confirm that the anharmonicity is an inherent feature of the Cmcm phase. These results suggest a design concept for thermal insulators and thermoelectric materials, based on displacive instabilities, and highlight the power of lattice-dynamics calculations for materials characterization. △ Less

Submitted 30 July, 2016; v1 submitted 11 February, 2016; originally announced February 2016.

Comments: Merged article + supporting information

Journal ref: Phys. Rev. Lett. 117, 075502 (2016)

Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

Authors: J. Buckeridge, C. R. A. Catlow, D. O. Scanlon, T. W. Keal, P. Sherwood, M. Miskufova, A. Walsh, S. M. Woodley, A. A. Sokol

Abstract: We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes into consideration both the effect of hole localisation and dipolar polarisation of the host material, and includes a well-defined reference level. Defect formation and ionisation energies show that divalent dopants are c… ▽ More We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes into consideration both the effect of hole localisation and dipolar polarisation of the host material, and includes a well-defined reference level. Defect formation and ionisation energies show that divalent dopants are counterbalanced in GaN by nitrogen vacancies and not by holes, which explains both the difficulty in achieving p-type conductivity in GaN and the associated major spectroscopic features, including the ubiquitous 3.46 eV photoluminescence line, a characteristic of all lightly divalent metal-doped GaN materials that has also been shown to occur in pure GaN samples. Our results give a comprehensive explanation for the observed behaviour of GaN doped with low concentrations of divalent metals in good agreement with relevant experiment. △ Less

Submitted 3 December, 2014; originally announced December 2014.

Comments: 6 pages, 3 figures

Embedded-Cluster Calculations in a Numeric Atomic Orbital Density-Functional Theory Framework

Authors: Daniel Berger, Andrew J. Logsdail, Harald Oberhofer, Matthew R. Farrow, C. Richard A. Catlow, Paul Sherwood, Alexey A. Sokol, Volker Blum, Karsten Reuter

Abstract: We integrate the all-electron electronic structure code FHI-aims into the general ChemShell package for solid-state embedding (QM/MM) calculations. A major undertaking in this integration is the implementation of pseudopotential functionality into FHI-aims to describe cations at the QM/MM boundary through effective core potentials and therewith prevent spurious overpolarization of the electronic d… ▽ More We integrate the all-electron electronic structure code FHI-aims into the general ChemShell package for solid-state embedding (QM/MM) calculations. A major undertaking in this integration is the implementation of pseudopotential functionality into FHI-aims to describe cations at the QM/MM boundary through effective core potentials and therewith prevent spurious overpolarization of the electronic density. Based on numeric atomic orbital basis sets, FHI-aims offers particularly efficient access to exact exchange and second order perturbation theory, rendering the established QM/MM setup an ideal tool for hybrid and double-hybrid level DFT calculations of solid systems. We illustrate this capability by calculating the reduction potential of Fe in the Fe-substituted ZSM-5 zeolitic framework and the reaction energy profile for (photo-)catalytic water oxidation at TiO2(110). △ Less

Submitted 8 April, 2014; originally announced April 2014.

Comments: 12 pages, 4 figures

Controlling bulk conductivity in topological insulators: Key role of anti-site defects

Authors: D. O. Scanlon, P. D. C. King, R. P. Singh, A. de la Torre, S. McKeown Walker, G. Balakrishnan, F. Baumberger, C. R. A. Catlow

Abstract: The binary Bi-chalchogenides, Bi2Ch3, are widely regarded as model examples of a recently discovered new form of quantum matter, the three-dimensional topological insulator (TI) [1-4]. These compounds host a single spin-helical surface state which is guaranteed to be metallic due to time reversal symmetry, and should be ideal materials with which to realize spintronic and quantum computing applica… ▽ More The binary Bi-chalchogenides, Bi2Ch3, are widely regarded as model examples of a recently discovered new form of quantum matter, the three-dimensional topological insulator (TI) [1-4]. These compounds host a single spin-helical surface state which is guaranteed to be metallic due to time reversal symmetry, and should be ideal materials with which to realize spintronic and quantum computing applications of TIs [5]. However, the vast majority of such compounds synthesized to date are not insulators at all, but rather have detrimental metallic bulk conductivity [2, 3]. This is generally accepted to result from unintentional doping by defects, although the nature of the defects responsible across different compounds, as well as strategies to minimize their detrimental role, are surprisingly poorly understood. Here, we present a comprehensive survey of the defect landscape of Bi-chalchogenide TIs from first-principles calculations. We find that fundamental differences in the energetics of native defect formation in Te- and Se-containing TIs enables precise control of the conductivity across the ternary Bi-Te-Se alloy system. From a systematic angle-resolved photoemission (ARPES) investigation of such ternary alloys, combined with bulk transport measurements, we demonstrate that this method can be utilized to achieve true topological insulators, with only a single Dirac cone surface state intersecting the chemical potential. Our microscopic calculations reveal the key role of anti-site defects for achieving this, and predict optimal growth conditions to realize maximally-resistive ternary TIs. △ Less

Submitted 18 April, 2012; originally announced April 2012.

Comments: 6 pages, 4 figures, 1 table

Journal ref: Advanced Materials, vol. 24, iss. 16, pp 2154-2158 (2012)

Microscopic Origins of Electron and Hole Stability in ZnO

Authors: C. Richard A. Catlow, Alexey A. Sokol, Aron Walsh

Abstract: A novel and direct method is proposed to assess the doping limits of semiconducting materials. Applied to the case of ZnO, our first-principles calculations demonstrate that p-type ZnO is thermodynamically unstable. A novel and direct method is proposed to assess the doping limits of semiconducting materials. Applied to the case of ZnO, our first-principles calculations demonstrate that p-type ZnO is thermodynamically unstable. △ Less

Submitted 2 February, 2011; originally announced February 2011.

Comments: Accepted to Chemical Communications (2011)

Journal ref: Chemical Communications 47, 3386 (2011)