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Cryogenic Memory Architecture Integrating Spin Hall Effect based Magnetic Memory and Superconductive Cryotron Devices
Authors:
Minh-Hai Nguyen,
Guilhem J. Ribeill,
Martin Gustafsson,
Shengjie Shi,
Sriharsha V. Aradhya,
Andrew P. Wagner,
Leonardo M. Ranzani,
Lijun Zhu,
Reza Baghdadi3 Brenden Butters,
Emily Toomey,
Marco Colangelo,
Patrick A. Truitt,
Amir Jafari-Salim,
David McAllister,
Daniel Yohannes,
Sean R. Cheng,
Rich Lazarus,
Oleg Mukhanov,
Karl K. Berggren,
Robert A. Buhrman,
Graham E. Rowlands,
Thomas A. Ohki
Abstract:
One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising cryogenic computing schemes utilizing Josephson junction superconducting logic, this obstacle is exacerbated by the cryogenic system requirements that expose the technology's lack of high-density, high-speed and power-e…
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One of the most challenging obstacles to realizing exascale computing is minimizing the energy consumption of L2 cache, main memory, and interconnects to that memory. For promising cryogenic computing schemes utilizing Josephson junction superconducting logic, this obstacle is exacerbated by the cryogenic system requirements that expose the technology's lack of high-density, high-speed and power-efficient memory. Here we demonstrate an array of cryogenic memory cells consisting of a non-volatile three-terminal magnetic tunnel junction element driven by the spin Hall effect, combined with a superconducting heater-cryotron bit-select element. The write energy of these memory elements is roughly 8 pJ with a bit-select element, designed to achieve a minimum overhead power consumption of about 30%. Individual magnetic memory cells measured at 4 K show reliable switching with write error rates below $10^{-6}$, and a 4x4 array can be fully addressed with bit select error rates of $10^{-6}$. This demonstration is a first step towards a full cryogenic memory architecture targeting energy and performance specifications appropriate for applications in superconducting high performance and quantum computing control systems, which require significant memory resources operating at 4 K.
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Submitted 1 July, 2019;
originally announced July 2019.
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Charge Coupled Device detectors with high quantum efficiency at UV wavelengths
Authors:
Erika T. Hamden,
April D. Jewell,
Charles A. Shapiro,
Samuel R. Cheng,
Tim M. Goodsall,
John Hennessy,
Michael Hoenk,
Todd Jones,
Sam Gordon,
Hwei Ru Ong,
David Schiminovich,
D. Christopher Martin,
Shouleh Nikzad
Abstract:
We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50% quantum efficiency (QE) in four bands from 130 to 300 nm. We now present multilayer coating designs that significantly outperform our previous work between 195 a…
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We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50% quantum efficiency (QE) in four bands from 130 to 300 nm. We now present multilayer coating designs that significantly outperform our previous work between 195 and 215 nm. Using up to 11 layers, we present several model designs to reach QE above 80%. We also demonstrate the successful performance of 5 and 11 layer ARCs on silicon and fused silica substrates. Finally, we present a five-layer coat- ing deposited onto a thinned, delta-doped CCD and demonstrate external QE greater than 60% between 202 and 208 nm, with a peak of 67.6% at 206 nm.
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Submitted 10 January, 2017;
originally announced January 2017.
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High Efficiency UV/Optical/NIR Detectors for Large Aperture Telescopes and UV Explorer Missions: Development of and Field Observations with Delta-doped Arrays
Authors:
Shouleh Nikzad,
April D. Jewell,
Michael E. Hoenk,
Todd Jones,
John Hennessy,
Tim Goodsall,
Alexander Carver,
Charles Shapiro,
Samuel R. Cheng,
Erika Hamden,
Gillian Kyne,
D. Christopher Martin,
David Schiminovich,
Paul Scowen,
Kevin France,
Stephan McCandliss,
Roxana E. Lupu
Abstract:
A number of exciting concepts are under development for Flagship, Probe class, Explorer class, and Suborbital class NASA missions in the ultraviolet/optical spectral ranges. These missions will depend on high performance silicon detector arrays being delivered affordably and in high numbers. In a focused effort we have advanced delta-doping technology to high throughput and high yield wafer-scale…
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A number of exciting concepts are under development for Flagship, Probe class, Explorer class, and Suborbital class NASA missions in the ultraviolet/optical spectral ranges. These missions will depend on high performance silicon detector arrays being delivered affordably and in high numbers. In a focused effort we have advanced delta-doping technology to high throughput and high yield wafer-scale processing, encompassing a multitude of state-of-the-art silicon-based detector formats and designs. As part of this technology advancement and in preparation for upcoming missions, we have embarked on a number of field observations, instrument integrations, and independent evaluations of delta-doped arrays. In this paper, we present recent data and innovations from the Advanced Detectors and Systems program at JPL, including two-dimensional doping technology; our end-to-end post-fabrication processing of high performance UV/Optical/NIR arrays; and advanced coatings for detectors and optical elements. Additionally, we present examples of past, in-progress, and planned observations and deployments of delta-doped arrays.
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Submitted 12 January, 2017; v1 submitted 14 December, 2016;
originally announced December 2016.
