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High-Performance Silicon Photonic Single-Sideband Modulators for Cold Atom Interferometry
Authors:
Ashok Kodigala,
Michael Gehl,
Gregory W. Hoth,
Jongmin Lee,
Christopher DeRose,
Andrew Pomerene,
Christina Dallo,
Douglas Trotter,
Andrew L. Starbuck,
Grant Biedermann,
Peter D. D. Schwindt,
Anthony L. Lentine
Abstract:
The most complicated and challenging system within a light-pulse atom interferometer (LPAI) is the laser system, which controls the frequencies and intensities of multiple laser beams over time to configure quantum gravity and inertial sensors. The main function of an LPAI laser system is to perform cold-atom generation and state-selective detection and to generate coherent two-photon process for…
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The most complicated and challenging system within a light-pulse atom interferometer (LPAI) is the laser system, which controls the frequencies and intensities of multiple laser beams over time to configure quantum gravity and inertial sensors. The main function of an LPAI laser system is to perform cold-atom generation and state-selective detection and to generate coherent two-photon process for the light-pulse sequence. Substantial miniaturization and ruggedization of the laser system can be achieved by bringing together most key functions of the laser and optical system onto a photonic integrated circuit (PIC). Here we demonstrate a high-performance silicon photonic carrier-suppressed single-sideband (CS-SSB) modulator PIC with dual-parallel Mach-Zehnder modulators (DP-MZMs) operating near 1560 nm, which can dynamically shift the frequency of the light for the desired function within the LPAI. Independent RF control of channels in SSB modulator enables the extensive study of imbalances in both the optical and RF phases and amplitudes to simultaneously reach 30 dB carrier suppression and unprecedented 47.8 dB sideband suppression with peak conversion efficiency of -6.846 dB (20.7 %). Using a silicon photonic SSB modulator with time-multiplexed frequency shifting in an LPAI laser system, we demonstrate cold-atom generation, state-selective detection, and the realization of atom interferometer fringes to estimate gravitational acceleration, $g \approx 9.77 \pm 0.01 \,\rm{m/s^2}$, in a Rubidium ($^{87}$Rb) atom system.
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Submitted 12 November, 2023; v1 submitted 26 April, 2022;
originally announced April 2022.
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Characterization of Suspended Membrane Waveguides towards a Photonic Atom Trap Integrated Platform
Authors:
Michael Gehl,
William Kindel,
Nicholas Karl,
Adrian Orozco,
Katherine Musick,
Douglas Trotter,
Christina Dallo,
Andrew Starbuck,
Andrew Leenheer,
Christopher DeRose,
Grant Biedermann,
Yuan-Yu Jau,
Jongmin Lee
Abstract:
We demonstrate an optical waveguide device, capable of supporting the high, in-vacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platforms, with suspended membrane waveguides, successfully manages optical powers of 6 mW (500 um span) to nearly 30 mW (125 um span) over an un-tethered waveguide span. This platform is co…
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We demonstrate an optical waveguide device, capable of supporting the high, in-vacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platforms, with suspended membrane waveguides, successfully manages optical powers of 6 mW (500 um span) to nearly 30 mW (125 um span) over an un-tethered waveguide span. This platform is compatible with laser cooling and magneto-optical traps (MOTs) in the vicinity of the suspended waveguide, called the membrane MOT and the needle MOT, a key ingredient for efficient trap loading. We evaluate two novel designs that explore critical thermal management features that enable this large power handling. This work represents a significant step toward an integrated platform for coupling neutral atom quantum systems to photonic and electronic integrated circuits on silicon.
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Submitted 18 March, 2021; v1 submitted 2 January, 2021;
originally announced January 2021.
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Integrated optical addressing of a trapped ytterbium ion
Authors:
M. Ivory,
W. J. Setzer,
N. Karl,
H. McGuinness,
C. DeRose,
M. Blain,
D. Stick,
M. Gehl,
L. P. Parazzoli
Abstract:
We report on the characterization of heating rates and photo-induced electric charging on a microfabricated surface ion trap with integrated waveguides. Microfabricated surface ion traps have received considerable attention as a quantum information platform due to their scalability and manufacturability. Here we characterize the delivery of 435 nm light through waveguides and diffractive couplers…
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We report on the characterization of heating rates and photo-induced electric charging on a microfabricated surface ion trap with integrated waveguides. Microfabricated surface ion traps have received considerable attention as a quantum information platform due to their scalability and manufacturability. Here we characterize the delivery of 435 nm light through waveguides and diffractive couplers to a single ytterbium ion in a compact trap. We measure an axial heating rate at room temperature of $0.78\pm0.05$ q/ms and see no increase due to the presence of the waveguide. Furthermore, the electric field due to charging of the exposed dielectric outcoupler settles under normal operation after an initial shift. The frequency instability after settling is measured to be 0.9 kHz.
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Submitted 27 April, 2021; v1 submitted 24 November, 2020;
originally announced November 2020.
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Hybrid Silicon Photonic-Lithium Niobate Electro-Optic Mach-Zehnder Modulator Beyond 100 GHz Bandwidth
Authors:
Peter O. Weigel,
Jie Zhao,
Kelvin Fang,
Hasan Al-Rubaye,
Douglas Trotter,
Dana Hood,
John Mudrick,
Christina Dallo,
Andrew T. Pomerene,
Andrew L. Starbuck,
Christopher T. DeRose,
Anthony L. Lentine,
Gabriel Rebeiz,
Shayan Mookherjea
Abstract:
Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be…
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Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping, data communications, ultrafast measurements, sampling, timing and ranging, and RF photonics. Although silicon (Si) photonic electro-optic modulators (EOMs) can be fabricated using wafer-scale technology compatible with the semiconductor industry, such devices do not exceed an electrical 3-dB bandwidth of about 50 GHz, whereas many applications require higher RF frequencies. Bulk Lithium Niobate (LN) and etched LN modulators can scale to higher bandwidths, but are not integrated with the Si photonics fabrication process adopted widely over the last decade. As an alternative, an ultra-high-bandwidth Mach-Zehnder EOM based on Si photonics is shown, made using conventional lithography and wafer-scale fabrication, bonded to an unpatterned LN thin film. This hybrid LN-Si MZM achieves beyond 100 GHz 3-dB electrical bandwidth. Our design integrates silicon photonics light input/output and optical components, including directional couplers, low-radius bends, and path-length difference segments, realized in a foundry Si photonics process. The use of a simple low-temperature (200C) back-end integration process to bond a postage-stamp-sized piece of LN where desired, and achieving light routing into and out of LN to harness its electro-optic property without any etching or patterning of the LN film, may be broadly-useful strategies for advanced integrated opto-electronic microchips.
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Submitted 23 May, 2018; v1 submitted 27 March, 2018;
originally announced March 2018.
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Metropolitan quantum key distribution with silicon photonics
Authors:
Darius Bunandar,
Anthony Lentine,
Catherine Lee,
Hong Cai,
Christopher M. Long,
Nicholas Boynton,
Nicholas Martinez,
Christopher DeRose,
Changchen Chen,
Matthew Grein,
Douglas Trotter,
Andrew Starbuck,
Andrew Pomerene,
Scott Hamilton,
Franco N. C. Wong,
Ryan Camacho,
Paul Davids,
Junji Urayama,
Dirk Englund
Abstract:
Photonic integrated circuits (PICs) provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) transmitter in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 950 kbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 106 kbps in an intercity…
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Photonic integrated circuits (PICs) provide a compact and stable platform for quantum photonics. Here we demonstrate a silicon photonics quantum key distribution (QKD) transmitter in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 950 kbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 106 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate PICs as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.
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Submitted 1 August, 2017;
originally announced August 2017.
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Silicon nanophotonics for scalable quantum coherent feedback networks
Authors:
Mohan Sarovar,
Daniel B. S. Soh,
Jonathan Cox,
Constantin Brif,
Christopher T. DeRose,
Ryan Camacho,
Paul Davids
Abstract:
The emergence of coherent quantum feedback control (CQFC) as a new paradigm for precise manipulation of dynamics of complex quantum systems has led to the development of efficient theoretical modeling and simulation tools and opened avenues for new practical implementations. This work explores the applicability of the integrated silicon photonics platform for implementing scalable CQFC networks. I…
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The emergence of coherent quantum feedback control (CQFC) as a new paradigm for precise manipulation of dynamics of complex quantum systems has led to the development of efficient theoretical modeling and simulation tools and opened avenues for new practical implementations. This work explores the applicability of the integrated silicon photonics platform for implementing scalable CQFC networks. If proven successful, on-chip implementations of these networks would provide scalable and efficient nanophotonic components for autonomous quantum information processing devices and ultra-low-power optical processing systems at telecommunications wavelengths. We analyze the strengths of the silicon photonics platform for CQFC applications and identify the key challenges to both the theoretical formalism and experimental implementations. In particular, we determine specific extensions to the theoretical CQFC framework (which was originally developed with bulk-optics implementations in mind), required to make it fully applicable to modeling of linear and nonlinear integrated optics networks. We also report the results of a preliminary experiment that studied the performance of an in situ controllable silicon nanophotonic network of two coupled cavities and analyze the properties of this device using the CQFC formalism.
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Submitted 8 November, 2016; v1 submitted 24 August, 2016;
originally announced August 2016.
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Hybrid Lithium Niobate and Silicon Photonic Waveguides
Authors:
Peter O. Weigel,
Marc Savanier,
Christopher DeRose,
Andrew T. Pomerene,
Andrew L. Starbuck,
Anthony L. Lentine,
Vincent Stenger,
Shayan Mookherjea
Abstract:
We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with ad…
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We describe a hybrid lithium niobate (LN) / silicon (Si) optical waveguiding platform at near infrared wavelengths. Various optical circuit elements, such as waveguides, bends, and couplers are demonstrated in two hybrid cross sections, A and B, with different LN confinement factors (32% and 90%, respectively) of the fundamental quasi TE mode. Such a large LN confinement factor is achieved with adiabatic tapers that preserve the symmetry of the fundamental quasi TE mode and prevent mode rotation. We find the average propagation loss in cross section B to be 4.3 dB/cm with a standard deviation of 2.1 dB/cm, comparable with a 3 um SiO2 clad (in place of LN) Si waveguide whose average propagation loss was 3.1 dB/cm with a standard deviation of 2.1 dB/cm.
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Submitted 6 October, 2015;
originally announced October 2015.