Finite-size corrections for defect-involving vertical transitions in supercell calculations
Authors:
Tomoya Gake,
Yu Kumagai,
Christoph Freysoldt,
Fumiyasu Oba
Abstract:
A correction method for vertical transition levels (VTLs) involving defect states calculated with a supercell technique is formulated and its effectiveness is systematically verified with ten defects in prototypical materials: cubic-BN, GaN, MgO, and 3C-SiC. Without any corrections, the absolute errors are around 1 eV with moderate size supercells in most cases. In contrast, when our correction me…
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A correction method for vertical transition levels (VTLs) involving defect states calculated with a supercell technique is formulated and its effectiveness is systematically verified with ten defects in prototypical materials: cubic-BN, GaN, MgO, and 3C-SiC. Without any corrections, the absolute errors are around 1 eV with moderate size supercells in most cases. In contrast, when our correction method is adopted, the absolute errors are reduced and become less than 0.12 eV in all the cases. Our correction scheme is general and will have the potential for wide application as it is adaptive for evaluating various quantities at fixed geometry, as represented by those relevant to the generalized Koopmans' theorem.
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Submitted 23 January, 2020; v1 submitted 4 July, 2019;
originally announced July 2019.
Energetics and electronic structure of native point defects in $α$-Ga2O3
Authors:
Takuma Kobayashi,
Tomoya Gake,
Yu Kumagai,
Fumiyasu Oba,
Yu-ichiro Matsushita
Abstract:
We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects (Ga and O vacancies, interstitials, and a Ga vacancy-O vacancy pair) in corundum structured $α$-Ga2O3. Either under a Ga- or O-rich growth condition, the negatively-charged Ga vacancy and the positively-charged Ga interstitial on a site surrounded by six O atoms are domi…
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We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects (Ga and O vacancies, interstitials, and a Ga vacancy-O vacancy pair) in corundum structured $α$-Ga2O3. Either under a Ga- or O-rich growth condition, the negatively-charged Ga vacancy and the positively-charged Ga interstitial on a site surrounded by six O atoms are dominant when the Fermi level approaches the conduction and valence band edges, respectively. These defects would compensate carrier electrons and holes, respectively. Ga-rich conditions relatively suppress the formation of the Ga vacancy and, therefore, are suited for extrinsic n-type doping of $α$-Ga2O3.
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Submitted 9 June, 2019;
originally announced June 2019.
