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Large language models converge toward human-like concept organization
Authors:
Mathias Lykke Gammelgaard,
Jonathan Gabel Christiansen,
Anders Søgaard
Abstract:
Large language models show human-like performance in knowledge extraction, reasoning and dialogue, but it remains controversial whether this performance is best explained by memorization and pattern matching, or whether it reflects human-like inferential semantics and world knowledge. Knowledge bases such as WikiData provide large-scale, high-quality representations of inferential semantics and wo…
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Large language models show human-like performance in knowledge extraction, reasoning and dialogue, but it remains controversial whether this performance is best explained by memorization and pattern matching, or whether it reflects human-like inferential semantics and world knowledge. Knowledge bases such as WikiData provide large-scale, high-quality representations of inferential semantics and world knowledge. We show that large language models learn to organize concepts in ways that are strikingly similar to how concepts are organized in such knowledge bases. Knowledge bases model collective, institutional knowledge, and large language models seem to induce such knowledge from raw text. We show that bigger and better models exhibit more human-like concept organization, across four families of language models and three knowledge graph embeddings.
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Submitted 29 August, 2023;
originally announced August 2023.
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Nanoscale view of engineered massive Dirac quasiparticles in lithographic superstructures
Authors:
Alfred J. H. Jones,
Lene Gammelgaard,
Mikkel O. Sauer,
Deepnarayan Biswas,
Roland J. Koch,
Chris Jozwiak,
Eli Rotenberg,
Aaron Bostwick,
Kenji Watanabe,
Takashi Taniguchi,
Cory R. Dean,
Antti-Pekka Jauho,
Peter Bøggild,
Thomas G. Pedersen,
Bjarke S. Jessen,
Søren Ulstrup
Abstract:
Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale hole…
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Massive Dirac fermions are low-energy electronic excitations characterized by a hyperbolic band dispersion. They play a central role in several emerging physical phenomena such as topological phase transitions, anomalous Hall effects and superconductivity. This work demonstrates that massive Dirac fermions can be controllably induced by lithographically patterning superstructures of nanoscale holes in a graphene device. Their band dispersion is systematically visualized using angle-resolved photoemission spectroscopy with nanoscale spatial resolution. A linear scaling of effective mass with feature sizes is discovered, underlining the Dirac nature of the superstructures. In situ electrostatic doping dramatically enhances the effective hole mass and leads to the direct observation of an electronic band gap that results in a peak-to-peak band separation of (0.64 $\pm$ 0.03) eV, which is shown via first-principles calculations to be strongly renormalized by carrier-induced screening. The presented methodology outlines a new approach for band structure engineering guided by directly viewing structurally- and electrically-tunable massive Dirac quasiparticles in lithographic superstructures at the nanoscale.
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Submitted 17 December, 2022;
originally announced December 2022.
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Super-Resolution Nanolithography of Two-Dimensional Materials by Anisotropic Etching
Authors:
Dorte R. Danielsen,
Anton Lyksborg-Andersen,
Kirstine E. S. Nielsen,
Bjarke S. Jessen,
Timothy J. Booth,
Manh-Ha Doan,
Yingqiu Zhou,
Peter Bøggild,
Lene Gammelgaard
Abstract:
Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness and resolution variability issues, which especially affects the performance of 2D materials. Here we study how dry anisotropic etching of multilayer 2D materials…
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Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness and resolution variability issues, which especially affects the performance of 2D materials. Here we study how dry anisotropic etching of multilayer 2D materials with sulfur hexafluoride (SF6) may overcome some of these issues, showing results for hexagonal boron nitride (hBN), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2). Scanning and transmission electron microscopy reveal that etching leads to anisotropic hexagonal features in the studied transition metal dichalcogenides, with the relative degree of anisotropy ranked as: WS2 > WSe2 > MoTe2 / MoS2. Etched holes are terminated by zigzag edges while etched dots (protrusions) are terminated by armchair edges. This can be explained by Wulff constructions, taking the relative stabilities of the edges and the AA stacking order into account. Patterns in WS2 are transferred to an underlying graphite layer, demonstrating a possible use for creating sub-10 nm features. In contrast, multilayer hBN exhibits no lateral anisotropy, but shows consistent vertical etch angles, independent of crystal orientation. This is used to create super-resolution lithographic patterns with ultra-sharp corners at the base of the hBN crystal, which are transferred into an underlying graphite crystal. We find that the anisotropic SF6 reactive ion etching process makes it possible to downsize nanostructures to obtain smooth edges, sharp corners, and feature sizes significantly below the resolution limit of electron beam lithography. The nanostructured 2D materials can be used themselves or as etch-masks to pattern other nanomaterials.
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Submitted 7 October, 2021;
originally announced October 2021.
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Gate electrostatics and quantum capacitance in ballistic graphene devices
Authors:
José M. Caridad,
Stephen R. Power,
Artsem A. Shylau,
Lene Gammelgaard,
Antti-Pekka Jauho,
Peter Bøggild
Abstract:
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene she…
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We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. In contrast, devices with lower edge disorder (< 1 nm roughness) are strongly influenced by the fringing electrostatic field at graphene boundaries, in quantitative agreement with theoretical calculations for pristine systems. Specifically, devices with low edge disorder present a large effective capacitance variation across the device channel with a nontrivial, inhomogeneous profile due not only to classical electrostatics but also to quantum mechanical effects. We show that such quantum capacitance contribution, occurring due to the low density of states (DOS) across the device in the presence of an external magnetic field, is considerably altered as a result of the gate electrostatics in the ballistic graphene device. Our conclusions can be extended to any two dimensional (2D) electronic system confined by a hard-wall potential and are important for understanding the electronic structure and device applications of conducting 2D materials.
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Submitted 1 May, 2019;
originally announced May 2019.
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Single-crystalline gold nanodisks on WS$_2$ mono- and multilayers: Strong coupling at room temperature
Authors:
Mathias Geisler,
Ximin Cui,
Jianfang Wang,
Tomas Rindzevicius,
Lene Gammelgaard,
Bjarke S. Jessen,
P. A. D. Gonçalves,
Francesco Todisco,
Peter Bøggild,
Anja Boisen,
Martijn Wubs,
N. Asger Mortensen,
Sanshui Xiao,
Nicolas Stenger
Abstract:
Engineering light-matter interactions up to the strong-coupling regime at room temperature is one of the cornerstones of modern nanophotonics. Achieving this goal will enable new platforms for potential applications such as quantum information processing, quantum light sources and even quantum metrology. Materials like transition metal dichalcogenides (TMDC) and in particular tungsten disulfide (W…
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Engineering light-matter interactions up to the strong-coupling regime at room temperature is one of the cornerstones of modern nanophotonics. Achieving this goal will enable new platforms for potential applications such as quantum information processing, quantum light sources and even quantum metrology. Materials like transition metal dichalcogenides (TMDC) and in particular tungsten disulfide (WS$_2$) possess large transition dipole moments comparable to semiconductor-based quantum dots, and strong exciton binding energies allowing the detailed exploration of light-matter interactions at room temperature. Additionally, recent works have shown that coupling TMDCs to plasmonic nanocavities with light tightly focused on the nanometer scale can reach the strong-coupling regime at ambient conditions. Here, we use ultra-thin single-crystalline gold nanodisks featuring large in-plane electromagnetic dipole moments aligned with the exciton transition-dipole moments located in monolayer WS$_2$. Through scattering and reflection spectroscopy we demonstrate strong coupling at room temperature with a Rabi splitting of $\sim$108 meV. In order to go further into the strong-coupling regime and inspired by recent experimental work by Stührenberg et al., we couple these nanodisks to multilayer WS$_2$. Due to an increase in the number of excitons coupled to our nanodisks, we achieve a Rabi splitting of $\sim$175 meV, a major increase of 62%. To our knowledge, this is the highest Rabi splitting reported for TMDCs coupled to open plasmonic cavities. Our results suggest that ultra-thin single-crystalline gold nanodisks coupled to WS$_2$ represent an exquisite platform to explore light-matter interactions.
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Submitted 22 December, 2018;
originally announced December 2018.
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The hot pick-up technique for batch assembly of van der Waals heterostructures
Authors:
Filippo Pizzocchero,
Lene Gammelgaard,
Bjarke Sørensen Jessen,
José M. Caridad,
Lei Wang,
James Hone,
Peter Bøggild,
Timothy J. Booth
Abstract:
The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a…
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The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield. For the monolayer devices we found semiclassical mean free paths up to 0.9 micrometer, with the narrowest samples showing clear indications of the transport being affected by boundary scattering. The presented method readily lends itself to fabrication of van der Waals heterostructures in both ambient and controlled atmospheres, while the ability to assemble pre-patterned layers paves the way for complex three-dimensional architectures.
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Submitted 8 May, 2016;
originally announced May 2016.
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Vassiliev Invariants from Symmetric Spaces
Authors:
Indranil Biswas,
Niels Leth Gammelgaard
Abstract:
We construct a natural framed weight system on chord diagrams from the curvature tensor of any pseudo-Riemannian symmetric space. These weight systems are of Lie algebra type and realized by the action of the holonomy Lie algebra on a tangent space. Among the Lie algebra weight systems, they are exactly characterized by having the symmetries of the Riemann curvature tensor.
We construct a natural framed weight system on chord diagrams from the curvature tensor of any pseudo-Riemannian symmetric space. These weight systems are of Lie algebra type and realized by the action of the holonomy Lie algebra on a tangent space. Among the Lie algebra weight systems, they are exactly characterized by having the symmetries of the Riemann curvature tensor.
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Submitted 23 October, 2014;
originally announced October 2014.
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Bohr--Sommerfeld Lagrangians of moduli spaces of Higgs bundles
Authors:
Indranil Biswas,
Niels Leth Gammelgaard,
Marina Logares
Abstract:
Let $X$ be a compact connected Riemann surface of genus at least two. Let $M_H(r,d)$ denote the moduli space of semistable Higgs bundles on $X$ of rank $r$ and degree $d$. We prove that the compact complex Bohr-Sommerfeld Lagrangians of $M_H(r,d)$ are precisely the irreducible components of the nilpotent cone in $M_H(r,d)$. This generalizes to Higgs $G$-bundles and also to the parabolic Higgs bund…
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Let $X$ be a compact connected Riemann surface of genus at least two. Let $M_H(r,d)$ denote the moduli space of semistable Higgs bundles on $X$ of rank $r$ and degree $d$. We prove that the compact complex Bohr-Sommerfeld Lagrangians of $M_H(r,d)$ are precisely the irreducible components of the nilpotent cone in $M_H(r,d)$. This generalizes to Higgs $G$-bundles and also to the parabolic Higgs bundles.
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Submitted 3 April, 2015; v1 submitted 23 September, 2014;
originally announced September 2014.
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The Hitchin-Witten Connection and Complex Quantum Chern-Simons Theory
Authors:
Jørgen Ellegaard Andersen,
Niels Leth Gammelgaard
Abstract:
We give a direct calculation of the curvature of the Hitchin connection, in geometric quantization on a symplectic manifold, using only differential geometric techniques. In particular, we establish that the curvature acts as a first-order operator on the quantum spaces. Projective flatness follows if the Kähler structures do not admit holomorphic vector fields. Following Witten, we define a comp…
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We give a direct calculation of the curvature of the Hitchin connection, in geometric quantization on a symplectic manifold, using only differential geometric techniques. In particular, we establish that the curvature acts as a first-order operator on the quantum spaces. Projective flatness follows if the Kähler structures do not admit holomorphic vector fields. Following Witten, we define a complex variant of the Hitchin connection on the bundle of prequantum spaces. The curvature is essentially unchanged, so projective flatness holds in the same cases. Finally, the results are applied to quantum Chern-Simons theory, both for compact and complex gauge groups.
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Submitted 3 September, 2014;
originally announced September 2014.
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Transfer-free electrical insulation of epitaxial graphene from its metal substrate
Authors:
Silvano Lizzit,
Rosanna Larciprete,
Paolo Lacovig,
Matteo Dalmiglio,
Fabrizio Orlando,
Alessandro Baraldi,
Lauge Gammelgaard,
Lucas Barreto,
Marco Bianchi,
Edward Perkins,
Philip Hofmann
Abstract:
High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a step-wise intercalation of silicon and oxygen, and the eventual formation of a SiO$_2$ layer between the graphene and the metal. We follow the reaction steps…
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High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a step-wise intercalation of silicon and oxygen, and the eventual formation of a SiO$_2$ layer between the graphene and the metal. We follow the reaction steps by x-ray photoemission spectroscopy and demonstrate the electrical insulation using a nano-scale multipoint probe technique.
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Submitted 10 August, 2012;
originally announced August 2012.
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A Universal Formula for Deformation Quantization on Kähler Manifolds
Authors:
Niels Leth Gammelgaard
Abstract:
We give an explicit local formula for any formal deformation quantization, with separation of variables, on a Kähler manifold. The formula is given in terms of differential operators, parametrized by acyclic combinatorial graphs.
We give an explicit local formula for any formal deformation quantization, with separation of variables, on a Kähler manifold. The formula is given in terms of differential operators, parametrized by acyclic combinatorial graphs.
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Submitted 25 May, 2010; v1 submitted 12 May, 2010;
originally announced May 2010.
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Hitchin's Projectively Flat Connection, Toeplitz Operators and the Asymptotic Expansion of TQFT Curve Operators
Authors:
Jørgen Ellegaard Andersen,
Niels Leth Gammelgaard
Abstract:
In this paper, we will provide a review of the geometric construction, proposed by Witten, of the SU(n) quantum representations of the mapping class groups which are part of the Reshetikhin-Turaev TQFT for the quantum group U_q(sl(n, C)). In particular, we recall the differential geometric construction of Hitchin's projectively flat connection in the bundle over Teichmuller space obtained by pus…
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In this paper, we will provide a review of the geometric construction, proposed by Witten, of the SU(n) quantum representations of the mapping class groups which are part of the Reshetikhin-Turaev TQFT for the quantum group U_q(sl(n, C)). In particular, we recall the differential geometric construction of Hitchin's projectively flat connection in the bundle over Teichmuller space obtained by push-forward of the determinant line bundle over the moduli space of rank n, fixed determinant, semi-stable bundles fibering over Teichmuller space. We recall the relation between the Hitchin connection and Toeplitz operators which was first used by the first named author to prove the asymptotic faithfulness of the SU(n) quantum representations of the mapping class groups. We further review the construction of the formal Hitchin connection, and we discuss its relation to the full asymptotic expansion of the curve operators of Topological Quantum Field Theory. We then go on to identifying the first terms in the formal parallel transport of the Hitchin connection explicitly. This allows us to identify the first terms in the resulting star product on functions on the moduli space. This is seen to agree with the first term in the star product on holonomy functions on these moduli spaces defined by Andersen, Mattes and Reshetikhin.
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Submitted 24 March, 2009;
originally announced March 2009.
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Hitchin's Connection in Half-Form Quantization
Authors:
Jørgen Ellegaard Andersen,
Niels Leth Gammelgaard,
Magnus Roed Lauridsen
Abstract:
We give a differential geometric construction of a connection in the bundle of quantum Hilbert spaces arising from half-form corrected geometric quantization of a prequantizable, symplectic manifold, endowed with a rigid, family of Kähler structures, all of which give vanishing first Dolbeault cohomology groups. In [And1] Andersen gave an explicit construction of Hitchin's connection in the non-…
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We give a differential geometric construction of a connection in the bundle of quantum Hilbert spaces arising from half-form corrected geometric quantization of a prequantizable, symplectic manifold, endowed with a rigid, family of Kähler structures, all of which give vanishing first Dolbeault cohomology groups. In [And1] Andersen gave an explicit construction of Hitchin's connection in the non-corrected case using additional assumptions. Under the same assumptions we also give an explicit solution in terms of Ricci potentials. Morover we show that if these are carefully chosen the construction coincides with the construction of Andersen in the non-corrected case.
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Submitted 20 May, 2008; v1 submitted 26 November, 2007;
originally announced November 2007.
