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Industrial graphene coating of low-voltage copper wires for power distribution
Authors:
Neeraj Mishra,
Ylea Vlamidis,
Leonardo Martini,
Arianna Lanza,
Alex Jouvray,
Marco La Sala,
Mauro Gemmi,
Vaidotas Mišeikis,
Matthew Perry,
Kenneth B. K. Teo,
Stiven Forti,
Camilla Coletti
Abstract:
Copper (Cu) is the electrical conductor of choice in many categories of electrical wiring, with household and building installations being the major market of this metal. This work demonstrates the coating of Cu wires - with diameters relevant for low voltage (LV) applications - with graphene. The chemical vapor deposition (CVD) coating process is rapid, safe, scalable and industrially compatible.…
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Copper (Cu) is the electrical conductor of choice in many categories of electrical wiring, with household and building installations being the major market of this metal. This work demonstrates the coating of Cu wires - with diameters relevant for low voltage (LV) applications - with graphene. The chemical vapor deposition (CVD) coating process is rapid, safe, scalable and industrially compatible. Graphene-coated Cu wires display oxidation resistance and increased electrical conductivity (up to 1% immediately after coating and up to 3% after 24 months), allowing for wire diameter reduction and thus significant savings in wire production costs. Combined spectroscopic and diffraction analysis indicate that the conductivity increase is due to a change in Cu crystallinity, induced by the coating process conditions, while electrical testing of aged wires shows that graphene plays a major role in maintaining improved electrical performances over long periods of time. Finally, graphene coating of Cu wires using an ambient pressure roll-to-roll (R2R) CVD reactor is demonstrated. This enables the in-line production of graphene-coated metallic wires as required for industrial scale-up.
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Submitted 5 September, 2022;
originally announced October 2022.
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Covalent Organic Functionalization of Graphene Nanosheets and Reduced Graphene Oxide via 1,3-Dipolar Cycloaddition of Azomethine Ylide
Authors:
Luca Basta,
Aldo Moscardini,
Filippo Fabbri,
Luca Bellucci,
Valentina Tozzini,
Silvia Rubini,
Andrea Griesi,
Mauro Gemmi,
Stefan Heun,
Stefano Veronesi
Abstract:
Organic functionalization of graphene is successfully performed via 1,3-dipolar cycloaddition of azomethine ylide in the liquid phase. The comparison between 1-methyl-2-pyrrolidinone and N,N-dimethylformamide as dispersant solvents, and between sonication and homogenization as dispersion techniques, proves N,N-dimethylformamide and homogenization as the most effective choice. The functionalization…
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Organic functionalization of graphene is successfully performed via 1,3-dipolar cycloaddition of azomethine ylide in the liquid phase. The comparison between 1-methyl-2-pyrrolidinone and N,N-dimethylformamide as dispersant solvents, and between sonication and homogenization as dispersion techniques, proves N,N-dimethylformamide and homogenization as the most effective choice. The functionalization of graphene nanosheets and reduced graphene oxide is confirmed using different techniques. Among them, energy-dispersive X-ray spectroscopy allows to map the pyrrolidine ring of the azomethine ylide on the surface of functionalized graphene, while micro-Raman spectroscopy detects new features arising from the functionalization, which are described in agreement with the power spectrum obtained from ab initio molecular dynamics simulation. Moreover, X-ray photoemission spectroscopy of functionalized graphene allows the quantitative elemental analysis and the estimation of the surface coverage, showing a higher degree of functionalization for reduced graphene oxide. This more reactive behavior originates from the localization of partial charges on its surface due to the presence of oxygen defects, as shown by the simulation of the electrostatic features. Functionalization of graphene using 1,3-dipolar cycloaddition is shown to be a significant step towards the controlled synthesis of graphene-based complex structures and devices at the nanoscale.
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Submitted 23 December, 2021;
originally announced December 2021.
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Hybrid improper dipolar density wave in NaLaCoWO$_6$
Authors:
Andrea Griesi,
Enrico Mugnaioli,
Arianna E. Lanza,
Valentina Vit,
Lara Righi,
Mauro Gemmi,
Fabio Orlandi
Abstract:
Hybrid Improper Ferroelectricity (HIF) allows the generation of an electrical polarization in the AA'BB'O$_6$ double perovskite materials thanks to the combination of two non-polar octahedral distortions. Nevertheless, for selected combination of the A/A' cations a non-polar incommensurate phase is observed with average symmetry $C2/m$. Thanks to a detailed crystallographic description of the inco…
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Hybrid Improper Ferroelectricity (HIF) allows the generation of an electrical polarization in the AA'BB'O$_6$ double perovskite materials thanks to the combination of two non-polar octahedral distortions. Nevertheless, for selected combination of the A/A' cations a non-polar incommensurate phase is observed with average symmetry $C2/m$. Thanks to a detailed crystallographic description of the incommensurate phase, based on electron, neutron and x-ray diffraction data, we show that the incommensurate modulation is related to an abrupt change of the out-of-phase tilting along the a- and c-axis whereas the tilting along the b-axis remain constant across the structure. By using group theory and symmetry analysis we show that we observe an incommensurate analog of HIF which induces a hybrid improper dipolar density wave in NaLaCoWO$_6$. The dipolar ordering is due also in this case to a trilinear invariant involving the commensurate and incommensurate octahedra tilting's.
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Submitted 28 March, 2022; v1 submitted 28 October, 2021;
originally announced October 2021.
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Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction
Authors:
Antonio Rossi,
Holger Buech,
Carmine Di Rienzo,
Vaidotas Miseikis,
Domenica Convertino,
Ameer Al-Temimy,
Valerio Voliani,
Mauro Gemmi,
Vincenzo Piazza,
Camilla Coletti
Abstract:
By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagon…
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By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition (CVD) approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.
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Submitted 18 August, 2016;
originally announced August 2016.
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Rapid and catalyst-free CVD growth of graphene on hBN
Authors:
Neeraj Mishra,
Vaidotas Miseikis,
Domenica Convertino,
Mauro Gemmi,
Vincenzo Piazza,
Camilla Coletti
Abstract:
Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the…
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Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the catalyst-free approach, poor control over the shape and crystallinity of the graphene grains and low growth rates are typically reported. In this work we investigate the crystallinity of differently shaped grains and identify a path towards a real van der Waals epitaxy of graphene on h-BN by adopting a catalyst-free CVD process. We demonstrate the polycrystalline nature of circular-shaped pads and attribute the stemming of different oriented grains to airborne contamination of the h-BN flakes. We show that single-crystal grains with six-fold symmetry can be obtained by adopting high hydrogen partial pressures during growth. Notably, growth rates as high as 100 nm/min are obtained by optimizing growth temperature and pressure. The possibility of synthesizing single-crystal graphene on h-BN with appreciable growth rates by adopting a simple CVD approach is a step towards an increased accessibility of this promising van der Waals heterostructure.
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Submitted 28 July, 2016; v1 submitted 27 July, 2016;
originally announced July 2016.
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Mapping of Axial Strain in InAs/InSb Heterostructured Nanowires
Authors:
Atanu Patra,
Jaya Kumar Panda,
Anushree Roy,
Mauro Gemmi,
Jérémy David,
Daniele Ercolani,
Lucia Sorba
Abstract:
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then mo…
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The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the observed TO phonon shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.
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Submitted 1 June, 2015;
originally announced June 2015.
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Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires
Authors:
Jaya Kumar Panda,
Arup Chakraborty,
Indra Dasgupta,
Elena Hasanu,
Daniele Ercolani,
Mauro Gemmi,
Lucia Sorba,
Anushree Roy
Abstract:
We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin…
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We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths in resonance Raman measurements, we probe the electronic band alignment of these semiconductor nanowires near a high symmetry point of the Brillouin zone (E$_{1}$ gap). The strain in the crystal structure, as revealed from the shift of the phonon mode, explains the observed band alignment at the wurtzite-zincblende interface. Our experimental results are further supported by electronic structure calculations for such periodic heterostructured interface.
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Submitted 20 May, 2015;
originally announced May 2015.
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Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor
Authors:
Vaidotas Miseikis,
Domenica Convertino,
Neeraj Mishra,
Mauro Gemmi,
Torge Mashoff,
Stefan Heun,
Niloofar Haghighian,
Francesco Bisio,
Maurizio Canepa,
Vincenzo Piazza,
Camilla Coletti
Abstract:
In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: i) using ex-situ oxidised foils; ii) performing annealing in an inert atmosphere prior t…
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In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: i) using ex-situ oxidised foils; ii) performing annealing in an inert atmosphere prior to growth; iii) enclosing the foils to lower the precursor impingement flux during growth. Growth rates as high as 14.7 and 17.5 micrometers per minute are obtained on flat and folded foils, respectively. Thus, single-crystal grains with lateral size of about one millimetre can be obtained in just one hour. The samples are characterised by optical microscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy as well as selected area electron diffraction (SAED) and low-energy electron diffraction (LEED), which confirm the high quality and homogeneity of the films. The development of a process for the quick production of large grain graphene in a commonly used commercial CVD reactor is a significant step towards an increased accessibility to millimetre-sized graphene crystals.
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Submitted 26 January, 2015;
originally announced January 2015.
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A lithium-ion battery based on a graphene nanoflakes ink anode and a lithium iron phosphate cathode
Authors:
Jusef Hassoun,
Francesco Bonaccorso,
Marco Agostini,
Marco Angelucci,
Maria Grazia Betti,
Roberto Cingolani,
Mauro Gemmi,
Carlo Mariani,
Stefania Panero,
Vittorio Pellegrini,
Bruno Scrosati
Abstract:
Li-ion rechargeable batteries have enabled the wireless revolution transforming global communication. Future challenges, however, demands distributed energy supply at a level that is not feasible with the current energy-storage technology. New materials, capable of providing higher energy density are needed. Here we report a new class of lithium-ion batteries based on a graphene ink anode and a li…
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Li-ion rechargeable batteries have enabled the wireless revolution transforming global communication. Future challenges, however, demands distributed energy supply at a level that is not feasible with the current energy-storage technology. New materials, capable of providing higher energy density are needed. Here we report a new class of lithium-ion batteries based on a graphene ink anode and a lithium iron phosphate cathode. By carefully balancing the cell composition and suppressing the initial irreversible capacity of the anode, we demonstrate an optimal battery performance in terms of specific capacity, i.e. 165 mAhg-1, estimated energy density of about 190 Whkg-1 and life, with a stable operation for over 80 charge-discharge cycles. We link these unique properties to the graphene nanoflake anode displaying crystalline order and high uptake of lithium at the edges, as well as to its structural and morphological optimization in relation to the overall battery composition. Our approach, compatible with any printing technologies, is cheap and scalable and opens up new opportunities for the development of high-capacity Li-ion batteries.
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Submitted 10 March, 2014;
originally announced March 2014.
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Electronic Band Structure of Wurtzite GaP Nanowires via Resonance Raman Spectroscopy
Authors:
Jaya Kumar Panda,
Anushree Roy,
Mauro Gemmi,
Elena Husanu,
Ang Li,
Daniele Ercolani,
Lucia Sorba
Abstract:
Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) mode and at 2.67 eV of the A1(LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with Gamma_9hh and Gamma_7V (Gamma…
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Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) mode and at 2.67 eV of the A1(LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with Gamma_9hh and Gamma_7V (Gamma_7C) symmetries of the valence (conduction) band and allows to measure WZ phase GaP band energies at the Gamma point. In addition, we have investigated temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of Gamma point energies, along with the crystal field and spin-orbit splitting energies. Above results provide a feedback for refining available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure.
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Submitted 28 March, 2013;
originally announced March 2013.
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Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires
Authors:
Jaya Kumar Panda,
Anushree Roy,
Achintya Singha,
Mauro Gemmi,
Daniele Ercolani,
Vittorio Pellegrini,
Lucia Sorba
Abstract:
An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined…
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An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes.
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Submitted 22 May, 2012;
originally announced May 2012.
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Raman sensitivity to crystal structure in InAs nanowires
Authors:
Jaya Kumar Panda,
Anushree Roy,
Achintya Singha,
Mauro Gemmi,
Daniele Ercolani,
Vittorio Pellegrini,
Lucia Sorba
Abstract:
We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperatur…
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We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires.
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Submitted 24 December, 2011;
originally announced December 2011.
