Showing 1–2 of 2 results for author: Gennaro, F

Design of a Modular GaN-based Three-Phase Three-Level ANPC Inverter

Authors: Angelo Di Cataldo, Hamed Eivazi, Giuseppe Aiello, Dario Patti, Giacomo Scelba, Mario Cacciato, Francesco Gennaro

Abstract: This paper presents the design of an 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors, to evaluate its feasibility in electric traction systems. The modular approach of the presented power converter design is detailed discussed and the different printed circuit boards composing the power… ▽ More This paper presents the design of an 800 V 11 kVA three-level three-phase active neutral point clamped inverter, utilizing 650 V gallium nitride enhancement-mode high-electron-mobility transistors, to evaluate its feasibility in electric traction systems. The modular approach of the presented power converter design is detailed discussed and the different printed circuit boards composing the power converter are presented, together with critical design issues. The paper includes the gate driver design, as well as the thermal analysis and parasitics extraction using ANSYS Q3D. Extractor. △ Less

Submitted 11 April, 2024; originally announced June 2024.

Comments: 6 pages, 9 figures, 15th International Conference ELEKTRO 2024. This work has been carried out in the framework of the ECSEL-JU Project GaN4AP (Gallium Nitride for Advanced Power Applications) - Grant Agreement No.101007310

Power Loss Modelling of GaN HEMT based 3L ANPC Three Phase Inverter for different PWM Techniques

Authors: M. Cacciato, G. Aiello, F. Gennaro, S. Mita, D. Patti, G. Scelba, A. Sujeeth

Abstract: The paper presents a straightforward modelling approach to compute the power loss distribution in GaN HEMT based three phase and three level (3L) active neutral point clamped (ANPC) inverters, for different pulse width modulated techniques. Conduction and switching losses averaged over each PWM switching period are analytically computed by starting from the operating conditions of the AC load and… ▽ More The paper presents a straightforward modelling approach to compute the power loss distribution in GaN HEMT based three phase and three level (3L) active neutral point clamped (ANPC) inverters, for different pulse width modulated techniques. Conduction and switching losses averaged over each PWM switching period are analytically computed by starting from the operating conditions of the AC load and data of GaN power devices. The accuracy of the proposed analytical approach is evaluated through a circuit based power electronics simulation tool, applied to different carrier-based PWM strategies. △ Less

Submitted 10 December, 2022; originally announced December 2022.

Comments: 10 pages, 13 figures, 24th European Conference on Power Electronics and Applications ( IEEE EPE 2022 ECCE Europe). This work has been carried out in the framework of the ECSEL-JU Project GaN4AP (Gallium Nitride for Advanced Power Applications) - Grant Agreement No.101007310

Journal ref: 24th European Conference on Power Electronics and Applications (IEEE EPE 2022 ECCE Europe), pp. P.1-P.10. ISBN 978-907581539-9