Showing 1–8 of 8 results for author: Gillet, P

Silicon formation in bulk silica through femtosecond laser engraving

Authors: Charles M. Pépin, Erica Block, Richard Gaal, Julien Nillon, Clemens Hoenninger, Philippe Gillet, Yves Bellouard

Abstract: Non-linear absorption phenomena induced by controlled irradiation with a femtosecond laser beam can be used to tailor materials properties within the bulk of substrates. One of the most successful applications of this technique is the ability to fabricate three-dimensional micro-devices integrating optical, mechanical or fluid handling functions in a single substrate. In this context, amorphous Si… ▽ More Non-linear absorption phenomena induced by controlled irradiation with a femtosecond laser beam can be used to tailor materials properties within the bulk of substrates. One of the most successful applications of this technique is the ability to fabricate three-dimensional micro-devices integrating optical, mechanical or fluid handling functions in a single substrate. In this context, amorphous SiO2 is the most widely studied material. Here we show that short (50-fs) femtosecond pulses induce the separation of Si and O ions in SiO2 substrates, leading to the formation of micro-crystallites that we identify as pure crystalline phase of Si. Interestingly, this polymorphic phase transformation occurs in the absence of laser-induced confined microexplosion and with moderate numerical aperture. These findings not only unravel a key mechanism related to the transformation of the material and its subsequent properties, but also pave the road for the development of three-dimensional Si-rich structures embedded in a pure silica phase, eventually leading to novel disruptive approaches for fabricating three- dimensional micro-devices. For instance, one could imagine a silica-host substrate, in which arbitrary three-dimensional silicon-based components are direct-write using a femtosecond laser, rather than through assembly of components coming out of different substrates or using multiple processing steps. △ Less

Submitted 28 June, 2018; originally announced June 2018.

Comments: 9 pages, 4 figures

Highly-Oriented Atomically Thin Ambipolar MoSe$_2$ Grown by Molecular Beam Epitaxy

Authors: Ming-Wei Chen, Dmitry Ovchinnikov, Sorin Lazar, Michele Pizzochero, Michael Brian Whitwick, Alessandro Surrente, Michał Baranowski, Oriol Lopez Sanchez, Philippe Gillet, Paulina Plochocka, Oleg V. Yazyev, Andras Kis

Abstract: Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin Mo… ▽ More Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin MoSe$_2$ on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe$_2$. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Large-area Epitaxial Monolayer MoS2

Authors: Dumitru Dumcenco, Dmitry Ovchinnikov, Kolyo Marinov, Oriol Lopez-Sanchez, Daria Krasnozhon, Ming-Wei Chen, Philippe Gillet, Anna Fontcuberta i Morral, Aleksandra Radenovic, Andras Kis

Abstract: Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics and energy harvesting. Large-area growth methods are needed to open the way to the applications. While significant progress to this goal was made, control over lattice orientation during growth still remains a challenge. This is needed in order to min… ▽ More Two-dimensional semiconductors such as MoS2 are an emerging material family with wide-ranging potential applications in electronics, optoelectronics and energy harvesting. Large-area growth methods are needed to open the way to the applications. While significant progress to this goal was made, control over lattice orientation during growth still remains a challenge. This is needed in order to minimize or even avoid the formation of grain boundaries which can be detrimental to electrical, optical and mechanical properties of MoS2 and other 2D semiconductors. Here, we report on the uniform growth of high-quality centimeter-scale continuous monolayer MoS2 with control over lattice orientation. Using transmission electron microscopy we show that the monolayer film is composed of coalescing single islands that share a predominant lattice orientation due to an epitaxial growth mechanism. Raman and photoluminescence spectra confirm the high quality of the grown material. Optical absorbance spectra acquired over large areas show new features in the high-energy part of the spectrum, indicating that MoS2 could also be interesting for harvesting this region of the solar spectrum and fabrication of UV-sensitive photodetectors. Even though the interaction between the growth substrate and MoS2 is strong enough to induce lattice alignment, we can easily transfer the grown material and fabricate field-effect transistors on SiO2 substrates showing mobility superior to the exfoliated material. △ Less

Submitted 1 May, 2014; originally announced May 2014.

A combined XAS and XRD Study of the High-Pressure Behaviour of GaAsO4 Berlinite

Authors: James Badro, Philippe Gillet, Paul F. McMillan, Alain Polian, Jean-Paul Itié

Abstract: Combined X-ray absorption spectroscopy (XAS) and X-ray diffraction (XRD) experiments have been carried out on GaAsO4 (berlinite structure) at high pressure and room temperature. XAS measurements indicate four-fold to six-fold coordination changes for both cations. The two local coordination transformations occur at different rates but appear to be coupled. A reversible transition to a high press… ▽ More Combined X-ray absorption spectroscopy (XAS) and X-ray diffraction (XRD) experiments have been carried out on GaAsO4 (berlinite structure) at high pressure and room temperature. XAS measurements indicate four-fold to six-fold coordination changes for both cations. The two local coordination transformations occur at different rates but appear to be coupled. A reversible transition to a high pressure crystalline form occurs around 8 GPa. At a pressure of about 12 GPa, the system mainly consists of octahedral gallium atoms and a mixture of arsenic in four-fold and six-fold coordinations. A second transition to a highly disordered material with both cations in six-fold coordination occurs at higher pressures and is irreversible. △ Less

Submitted 17 July, 1997; originally announced July 1997.

Comments: 8 pages, 5 figures, LaTeX2e

XAS Study of the High Pressure Behaviour of Quartzlike Compounds

Authors: James Badro, Jean-Paul Itié, Alain Polian, Philippe Gillet

Abstract: EXAFS spectroscopy experiments have been carried out on quartz-like GaAsO4 and AlAsO4 at high pressure and room temperature. It has been shown that these materials exhibit two structural phase transitions; the first transition to a high pressure crystalline form occurs at 9 GPa and is reversible upon decompression, whereas the second transition occurs at higher pressures and is irreversible. In… ▽ More EXAFS spectroscopy experiments have been carried out on quartz-like GaAsO4 and AlAsO4 at high pressure and room temperature. It has been shown that these materials exhibit two structural phase transitions; the first transition to a high pressure crystalline form occurs at 9 GPa and is reversible upon decompression, whereas the second transition occurs at higher pressures and is irreversible. In GaAsO4, EXAFS measurements agree with the predicted transition from four- to six-fold coordination of oxygen atoms around the cations, but the two local coordination transformations are not dissociated; in fact, both As and Ga atoms exhibit a coordination change at the onset of the first phase transition, the rate of transformation being significantly higher for Ga atoms. In both cases, the average bond length increases very rapidly with pressure thus yielding the first compression stage after the transition. In the second stage, the average bond lengths increase slowly, ultimately reaching six-fold coordination above 28 GPa and 24 GPa for As and Ga respectively. The behaviour of the As K-edge EXAFS is the same for both compounds, and enables us to link the behaviour of Ga and Al atoms. The local transformations are well described and a direct link with phosphate berlinites seems timely. △ Less

Submitted 17 July, 1997; originally announced July 1997.

Comments: 5 pages, 3 figures, LaTeX2e, J. de Physique (in press)

Melting and Pressure-Induced Amorphization of Quartz

Authors: James Badro, Philippe Gillet, Jean-Louis Barrat

Abstract: It has recently been shown that amorphization and melting of ice were intimately linked. In this letter, we infer from molecular dynamics simulations on the SiO2 system that the extension of the quartz melting line in the metastable pressure-temperature domain is the pressure-induced amorphization line. It seems therefore likely that melting is the physical phenomenon responsible for pressure in… ▽ More It has recently been shown that amorphization and melting of ice were intimately linked. In this letter, we infer from molecular dynamics simulations on the SiO2 system that the extension of the quartz melting line in the metastable pressure-temperature domain is the pressure-induced amorphization line. It seems therefore likely that melting is the physical phenomenon responsible for pressure induced amorphization. Moreover, we show that the structure of a "pressure glass" is similar to that of a very rapidly (1e+13 to 1e+14 kelvins per second) quenched thermal glass. △ Less

Submitted 23 April, 1998; v1 submitted 16 July, 1997; originally announced July 1997.

Comments: 9 pages, 4 figures, LaTeX2e

Strong to fragile transition in a model of liquid silica

Authors: Jean-Louis Barrat, James Badro, Philippe Gillet

Abstract: The transport properties of an ionic model for liquid silica at high temperatures and pressure are investigated using molecular dynamics simulations. With increasing pressure, a clear change from "strong" to "fragile" behaviour (according to Angell's classification of glass-forming liquids) is observed, albeit only on the small viscosity range that can be explored in MD simulations.. This change… ▽ More The transport properties of an ionic model for liquid silica at high temperatures and pressure are investigated using molecular dynamics simulations. With increasing pressure, a clear change from "strong" to "fragile" behaviour (according to Angell's classification of glass-forming liquids) is observed, albeit only on the small viscosity range that can be explored in MD simulations.. This change is related to structural changes, from an almost perfect four-fold coordination to an imperfect five or six-fold coordination. (submitted to "Molecular Simulation") △ Less

Submitted 17 December, 1996; originally announced December 1996.

Comments: 5 pages, latex, 6 postscript figures

Numerical simulation of alpha-quartz under non-hydrostatic compression. Memory glass and five-coordinated crystalline phases

Authors: James Badro, Jean-Louis Barrat, Philippe Gillet

Abstract: The behavior of $αあるふぁ$-quartz under hydrostatic and non-hydrostatic high-pressure conditions has been investigated in Molecular Dynamics simulations of silica in order to clarify the role of non-hydrostatic stresses in the amorphization process. It is shown that the amorphization threshold is not modified if the stress along the {\bf c} direction is lowered, so that the mean amorphization pressure… ▽ More The behavior of $αあるふぁ$-quartz under hydrostatic and non-hydrostatic high-pressure conditions has been investigated in Molecular Dynamics simulations of silica in order to clarify the role of non-hydrostatic stresses in the amorphization process. It is shown that the amorphization threshold is not modified if the stress along the {\bf c} direction is lowered, so that the mean amorphization pressure can effectively be lowered under non-hydrostatic conditions. On the other hand, the application of a positive uniaxial stress along the {\bf c} axis, results in the appearance of a new crystalline phase, where all silicon atoms are in five-fold coordination. △ Less

Submitted 23 January, 1996; originally announced January 1996.

Comments: Physical Review Letters, in press. 9 pages, uuencoded compressed postscript file