All-dielectric high-Q dynamically tunable transmissive metasurfaces
Authors:
Ruzan Sokhoyan,
Claudio U. Hail,
Morgan Foley,
Meir Y. Grajower,
Harry A. Atwater
Abstract:
Active metasurfaces, which are arrays of actively tunable resonant elements, can dynamically control the wavefront of the scattered light at a subwavelength scale. To date, most active metasurfaces that enable dynamic wavefront shaping operate in reflection. On the other hand, active metasurfaces operating in transmission are of considerable interest as they can readily be integrated with chip-sca…
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Active metasurfaces, which are arrays of actively tunable resonant elements, can dynamically control the wavefront of the scattered light at a subwavelength scale. To date, most active metasurfaces that enable dynamic wavefront shaping operate in reflection. On the other hand, active metasurfaces operating in transmission are of considerable interest as they can readily be integrated with chip-scale light sources, yielding ultra-compact wavefront shaping devices. Here, we report designs for all-dielectric low-loss active metasurfaces which can dynamically manipulate the transmitted light wavefront in the near-infrared wavelength range. Our active metasurfaces feature an array of amorphous silicon (a-Si) pillars on a silica substate, which support resonances with quality factors (Q-factors) as high as 9800, as well as other lower-Q resonances. First, we demonstrate that high-Q resonance dips observed in transmission can be transformed into a transmission resonance peak by positioning a-Si pillar resonators at a prescribed distance from a crystalline Si substrate, defined by a silica spacer layer. Next, we report the design of metasurface geometry with realistic interconnect architectures that enable thermo-optic dynamic beam switching with switching times as low as 7.3 μs. Beam switching is observed for refractive index differences between neighboring metasurface elements as low as 0.0026. Finally, we demonstrate that metasurface structures with both high-Q and lower-Q modes and realistic interconnect architectures can be used for dynamic beam steering.
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Submitted 14 September, 2023;
originally announced September 2023.
Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus
Authors:
Souvik Biswas,
William S. Whitney,
Meir Y. Grajower,
Kenji Watanabe,
Takashi Taniguchi,
Hans A. Bechtel,
George R. Rossman,
Harry A. Atwater
Abstract:
Black phosphorus (BP) offers considerable promise for infrared and visible photonics. Efficient tuning of the bandgap and higher subbands in BP by modulation of the Fermi level or application of vertical electric fields has been previously demonstrated, allowing electrical control of its above bandgap optical properties. Here, we report modulation of the optical conductivity below the band-gap (5-…
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Black phosphorus (BP) offers considerable promise for infrared and visible photonics. Efficient tuning of the bandgap and higher subbands in BP by modulation of the Fermi level or application of vertical electric fields has been previously demonstrated, allowing electrical control of its above bandgap optical properties. Here, we report modulation of the optical conductivity below the band-gap (5-15 um) by tuning the charge density in a two-dimensional electron gas (2DEG) induced in BP, thereby modifying its free carrier dominated intraband response. With a moderate doping density of 7x10^12/cm2 we were able to observe a polarization dependent epsilon-near-zero behavior in the dielectric permittivity of BP. The intraband polarization sensitivity is intimately linked to the difference in effective fermionic masses along the two crystallographic directions, as confirmed by our measurements. Our results suggest the potential of multilayer BP to allow new optical functions for emerging photonics applications.
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Submitted 2 September, 2020;
originally announced September 2020.
