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High-entropy magnetism of murunskite
Authors:
D. Tolj,
P. Reddy,
I. Živković,
L. Akšamović,
J. R. Soh,
K. Komȩdera,
I. Biało,
C. M. N. Kumar,
T. Ivšić,
M. Novak,
O. Zaharko,
C. Ritter,
T. La Grange,
W. Tabiś,
I. Batistić,
L. Forró,
H. M. Rønnow,
D. K. Sunko,
N. Barišić
Abstract:
Murunskite (K$_2$FeCu$_3$S$_4$) is a bridging compound between the only two known families of high-temperature superconductors. It is a semiconductor like the parent compounds of cuprates, yet isostructural to metallic iron-pnictides. Moreover, like both families, it has an antiferromagnetic (AF)-like response with an ordered phase occurring below $\approx$ 100 K. Through comprehensive neutron, Mö…
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Murunskite (K$_2$FeCu$_3$S$_4$) is a bridging compound between the only two known families of high-temperature superconductors. It is a semiconductor like the parent compounds of cuprates, yet isostructural to metallic iron-pnictides. Moreover, like both families, it has an antiferromagnetic (AF)-like response with an ordered phase occurring below $\approx$ 100 K. Through comprehensive neutron, Mössbauer, and XPS measurements on single crystals, we unveil AF with a nearly commensurate quarter-zone wave vector. Intriguingly, the only identifiable magnetic atoms, iron, are randomly distributed over one-quarter of available crystallographic sites in 2D planes, while the remaining sites are occupied by closed-shell copper. Notably, any interpretation in terms of a spin-density wave is challenging, in contrast to the metallic iron-pnictides where Fermi-surface nesting can occur. Our findings align with a disordered-alloy picture featuring magnetic interactions up to second neighbors. Moreover, in the paramagnetic state, iron ions are either in Fe$^{3+}$ or Fe$^{2+}$ oxidation states, associated with two distinct paramagnetic sites identified by Mössbauer spectroscopy. Upon decreasing the temperature below the appearance of magnetic interactions, these two signals merge completely into a third, implying an orbital transition. It completes the cascade of (local) transitions that transform iron atoms from fully orbitally and magnetically disordered to homogeneously ordered in inverse space, but still randomly distributed in real space.
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Submitted 24 June, 2024;
originally announced June 2024.
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Semiconductor-based electron flying qubits: Review on recent progress accelerated by numerical modelling
Authors:
Hermann Edlbauer,
Junliang Wang,
Thierry Crozes,
Pierre Perrier,
Seddik Ouacel,
Clément Geffroy,
Giorgos Georgiou,
Eleni Chatzikyriakou,
Antonio Lacerda-Santos,
Xavier Waintal,
D. Christian Glattli,
Preden Roulleau,
Jayshankar Nath,
Masaya Kataoka,
Janine Splettstoesser,
Matteo Acciai,
Maria Cecilia da Silva Figueira,
Kemal Öztas,
Alex Trellakis,
Thomas Grange,
Oleg M. Yevtushenko,
Stefan Birner,
Christopher Bäuerle
Abstract:
The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological…
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The progress of charge manipulation in semiconductor-based nanoscale devices opened up a novel route to realise a flying qubit with a single electron. In the present review, we introduce the concept of these electron flying qubits, discuss their most promising realisations and show how numerical simulations are applicable to accelerate experimental development cycles. Addressing the technological challenges of flying qubits that are currently faced by academia and quantum enterprises, we underline the relevance of interdisciplinary cooperation to move emerging quantum industry forward. The review consists of two main sections:
Pathways towards the electron flying qubit: We address three routes of single-electron transport in GaAs-based devices focusing on surface acoustic waves, hot-electron emission from quantum dot pumps and Levitons. For each approach, we discuss latest experimental results and point out how numerical simulations facilitate engineering the electron flying qubit.
Numerical modelling of quantum devices: We review the full stack of numerical simulations needed for fabrication of the flying qubits. Choosing appropriate models, examples of basic quantum mechanical simulations are explained in detail. We discuss applications of open-source (KWANT) and the commercial (nextnano) platforms for modelling the flying qubits. The discussion points out the large relevance of software tools to design quantum devices tailored for efficient operation.
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Submitted 4 July, 2022;
originally announced July 2022.
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Ultrafast Transverse Modulation of Free Electrons by Interaction with Shaped Optical Fields
Authors:
I. Madan,
V. Leccese,
A. Mazur,
F. Barantani,
T. La Grange,
A. Sapozhnik,
S. Gargiulo,
E. Rotunno,
J. -C. Olaya,
I. Kaminer,
V. Grillo,
F. J. García de Abajo,
F. Carbone,
G. M. Vanacore
Abstract:
Spatio-temporal shaping of electron beams is a bold frontier in electron microscopy, enabling new routes toward spatial-resolution enhancement, selective probing, low-dose imaging and faster data acquisition. Over the last decade, shaping methods evolved from passive phase plates to low-speed electrostatic and magnetostatic displays. Recently, higher shaping speed and flexibility have become feasi…
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Spatio-temporal shaping of electron beams is a bold frontier in electron microscopy, enabling new routes toward spatial-resolution enhancement, selective probing, low-dose imaging and faster data acquisition. Over the last decade, shaping methods evolved from passive phase plates to low-speed electrostatic and magnetostatic displays. Recently, higher shaping speed and flexibility have become feasible by the advent of ultrafast electron microscopy, embodying a swift change of paradigm that relies on using light to control free electrons. Here, we experimentally demonstrate that arbitrary transverse modulation of electron beams is possible without the need for designing and fabricating complicated electron-optics elements or material nanostructures, but rather resorting to shaping light beams reflected from a planar thin film. We demonstrate arbitrary transverse modulation of electron wavepackets via inelastic interaction with a shaped ultrafast light field controlled by an external spatial light modulator (SLM). We illustrate this method by generating Hermite-Gaussian (HG) electron beams with HG10 and HG01 symmetry and discuss their possible use in enhancing the imaging contrast of microscopic features. Relative to current schemes, our approach adopting an external SLM dramatically widens the range of patterns that can be imprinted on the electron wave function and makes electron shaping a much easier task to perform.
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Submitted 5 June, 2022;
originally announced June 2022.
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Unveiling the charge distribution of a GaAs-based nanoelectronic device: A large experimental data-set approach
Authors:
Eleni Chatzikyriakou,
Junliang Wang,
Lucas Mazzella,
Antonio Lacerda-Santos,
Maria Cecilia da Silva Figueira,
Alex Trellakis,
Stefan Birner,
Thomas Grange,
Christopher Bäuerle,
Xavier Waintal
Abstract:
In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work, we assess the predictive power of these simulations by comparing the results of a single model with a large experimental data set of 110 devices with 48 differe…
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In quantum nanoelectronics, numerical simulations have become an ubiquitous tool. Yet the comparison with experiments is often done at a qualitative level or restricted to a single device with a handful of fitting parameters. In this work, we assess the predictive power of these simulations by comparing the results of a single model with a large experimental data set of 110 devices with 48 different geometries. The devices are quantum point contacts of various shapes and sizes made with electrostatic gates deposited on top of a high mobility GaAs/GaAlAs two dimensional electron gas. We study the pinch-off voltages applied on the gates to deplete the two-dimensional electron gas in various spatial positions. We argue that the pinch-off voltages are a very robust signature of the charge distribution in the device. The large experimental data set allows us to critically review the modeling and arrive at a robust one-parameter model that can be calibrated in situ, a crucial step for making predictive simulations.
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Submitted 13 November, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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Log Fano blowups of mixed products of projective spaces and their effective cones
Authors:
Tim Grange,
Elisa Postinghel,
Artie Prendergast-Smith
Abstract:
We compute the cones of effective divisors on blowups of $\mathbb{P}^1 \times \mathbb{P}^2$ and $\mathbb{P}^1 \times \mathbb{P}^3$ in up to 6 points. We also show that all these varieties are log Fano, giving a conceptual explanation for the fact that all the cones we compute are rational polyhedral.
We compute the cones of effective divisors on blowups of $\mathbb{P}^1 \times \mathbb{P}^2$ and $\mathbb{P}^1 \times \mathbb{P}^3$ in up to 6 points. We also show that all these varieties are log Fano, giving a conceptual explanation for the fact that all the cones we compute are rational polyhedral.
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Submitted 26 April, 2022; v1 submitted 8 September, 2021;
originally announced September 2021.
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THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
Authors:
David Stark,
Muhammad Mirza,
Luca Persichetti,
Michele Montanari,
Sergej Markmann,
Mattias Beck,
Thomas Grange,
Stefan Birner,
Michele Virgilio,
Chiara Ciano,
Michele Ortolani,
Cedric Corley,
Giovanni Capellini,
Luciana Di Gaspare,
Monica De Seta,
Douglas J. Paul,
Jérôme Faist,
Giacomo Scalari
Abstract:
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active regio…
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We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
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Submitted 14 January, 2021;
originally announced January 2021.
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Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
Authors:
T. Grange,
S. Mukherjee,
G. Capellini,
M. Montanari,
L. Persichetti,
L. Di Gaspare,
S. Birner,
A. Attiaoui,
O. Moutanabbir,
M. Virgilio,
M. De Seta
Abstract:
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant…
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We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploiting our experimental insights into the three-dimensional atomic landscape obtained on Ge/GeSi heterointerfaces obtained by atom probe tomography, we have been able to define the full set of interface parameters relevant to the scattering potential, including both the in-plane and axial correlation inside real diffuse interfaces. Our experimental findings indicate a partial coherence of the interface roughness along the growth direction within the interfaces. We show that it is necessary to include this feature, previously neglected by theoretical models, when heterointerfaces characterized by finite interface widths are taken into consideration.
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Submitted 24 April, 2020; v1 submitted 3 February, 2020;
originally announced February 2020.
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Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
Authors:
T. Grange,
D. Stark,
G. Scalari,
J. Faist,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
M. Ortolani,
D. J. Paul,
G. Capellini,
S. Birner,
M. Virgilio
Abstract:
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with…
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n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights.
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Submitted 30 November, 2018;
originally announced November 2018.
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Giant non-linear interaction between two optical beams via a quantum dot embeddedin a photonic wire
Authors:
H. A Nguyen,
T. Grange,
B Reznychenko,
I. Yeo,
P. -L De Assis,
D Tumanov,
F Fratini,
N Malik,
E Dupuy,
N Gregersen,
A Auffèves,
J. -M Gérard,
J Claudon,
J. -Ph Poizat
Abstract:
Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a…
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Optical non-linearities usually appear for large intensities, but discrete transitions allow for giant non-linearities operating at the single photon level. This has been demonstrated in the last decade for a single optical mode with cold atomic gases, or single two-level systems coupled to light via a tailored photonic environment. Here we demonstrate a two-modes giant non-linearity by using a three-level structure in a single semiconductor quantum dot (QD) embedded in a photonic wire antenna. The large coupling efficiency and the broad operation bandwidth of the photonic wire enable us to have two different laser beams interacting with the QD in order to control the reflectivity of a laser beam with the other one using as few as 10 photons per QD lifetime. We discuss the possibilities offered by this easily integrable system for ultra-low power logical gates and optical quantum gates.
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Submitted 9 March, 2018; v1 submitted 11 May, 2017;
originally announced May 2017.
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Reducing phonon-induced decoherence in solid-state single-photon sources with cavity quantum electrodynamics
Authors:
Thomas Grange,
Niccolo Somaschi,
Carlos Antón,
Lorenzo De Santis,
Guillaume Coppola,
Valérian Giesz,
Aristide Lemaître,
Isabelle Sagnes,
Alexia Auffèves,
Pascale Senellart
Abstract:
Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zero-phonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of t…
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Solid-state emitters are excellent candidates for developing integrated sources of single photons. Yet, phonons degrade the photon indistinguishability both through pure dephasing of the zero-phonon line and through phonon-assisted emission. Here, we study theoretically and experimentally the indistinguishability of photons emitted by a semiconductor quantum dot in a microcavity as a function of temperature. We show that a large coupling to a high quality factor cavity can simultaneously reduce the effect of both phonon-induced sources of decoherence. It first limits the effect of pure dephasing on the zero phonon line with indistinguishabilities above $97\%$ up to $18$ K. Moreover, it efficiently redirects the phonon sidebands into the zero-phonon line and brings the indistinguishability of the full emission spectrum from $87\%$ (resp. $24\%$) without cavity effect to more than $99\%$ (resp. $76\%$) at $0$ K (resp. $20$ K). We provide guidelines for optimal cavity designs that further minimize the phonon-induced decoherence.
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Submitted 19 May, 2017; v1 submitted 9 December, 2016;
originally announced December 2016.
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Influence of phonons on solid-state cavity-QED investigated using nonequilibrium Green's functions
Authors:
Gaston Hornecker,
Alexia Auffèves,
Thomas Grange
Abstract:
The influence of electron--phonon interactions on the dynamics of a quantum dot coupled to a photonic cavity mode is investigated using a nonequilibrium Green's function approach. Within a polaron frame, the self-consistent-Born approximation is used to treat the phonon-assisted scattering processes between the quantum dot polaron and the cavity. Two-time correlators of the quantum dot-cavity syst…
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The influence of electron--phonon interactions on the dynamics of a quantum dot coupled to a photonic cavity mode is investigated using a nonequilibrium Green's function approach. Within a polaron frame, the self-consistent-Born approximation is used to treat the phonon-assisted scattering processes between the quantum dot polaron and the cavity. Two-time correlators of the quantum dot-cavity system are calculated by solving the Kadanoff-Baym equations, giving access to photon spectra and photon indistinguishability. The non-Markovian nature of the interaction with the phonon bath is shown to be very accurately described by our method in various regime of cavity-quantum electrodynamics (cavity-QED). The indistinguishability of the emitted photons emitted at zero temperature are found to be in very good agreement with a previously reported exact diagonalization approach [Phys.~Rev.~B~87,~081308~(2013)]. Besides, our method enables the calculations of photon indistinguishability at finite temperatures and for strong electron-phonon interactions. More generally, our method opens new avenues in the study of open quantum system dynamics coupled to non-Markovian environments.
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Submitted 30 September, 2016;
originally announced September 2016.
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Scalable performance in solid-state single-photon sources
Authors:
J. C. Loredo,
N. A. Zakaria,
N. Somaschi,
C. Anton,
L. De Santis,
V. Giesz,
T. Grange,
M. A. Broome,
O. Gazzano,
G. Coppola,
I. Sagnes,
A. Lemaitre,
A. Auffeves,
P. Senellart,
M. P. Almeida,
A. G. White
Abstract:
The desiderata for an ideal photon source are high brightness, high single-photon purity, and high indistinguishability. Defining brightness at the first collection lens, these properties have been simultaneously demonstrated with solid-state sources, however absolute source efficiencies remain close to the 1% level, and indistinguishability only demonstrated for photons emitted consecutively on t…
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The desiderata for an ideal photon source are high brightness, high single-photon purity, and high indistinguishability. Defining brightness at the first collection lens, these properties have been simultaneously demonstrated with solid-state sources, however absolute source efficiencies remain close to the 1% level, and indistinguishability only demonstrated for photons emitted consecutively on the few nanosecond scale. Here we employ deterministic quantum dot-micropillar devices to demonstrate solid-state single-photon sources with scalable performance. In one device, an absolute brightness at the output of a single-mode fibre of 14% and purities of 97.1-99.0% are demonstrated. When non-resontantly excited, it emits a long stream of photons that exhibit indistinguishability up to 70%---above the classical limit of 50%---even after 33 consecutively emitted photons, a 400 ns separation between them. Resonant excitation in other devices results in near-optimal indistinguishability values: 96% at short timescales, remaining at 88% in timescales as large as 463 ns, after 39 emitted photons. The performance attained by our devices brings solid-state sources into a regime suitable for scalable implementations.
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Submitted 14 April, 2016; v1 submitted 4 January, 2016;
originally announced January 2016.
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Coherent control of a solid-state quantum bit with few-photon pulses
Authors:
V. Giesz,
N. Somaschi,
G. Hornecker,
T. Grange,
B. Reznychenko,
L. De Santis,
J. Demory,
C. Gomez,
I. Sagnes,
A. Lemaitre,
O. Krebs,
N. D. Lanzillotti-Kimura,
L. Lanco,
A. Auffeves,
P. Senellart
Abstract:
Single photons are the natural link between the nodes of a quantum network: they coherently propagate and interact with many types of quantum bits including natural and artificial atoms. Ideally, one atom should deterministically control the state of a photon and vice-versa. The interaction between free space photons and an atom is however intrinsically weak and many efforts have been dedicated to…
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Single photons are the natural link between the nodes of a quantum network: they coherently propagate and interact with many types of quantum bits including natural and artificial atoms. Ideally, one atom should deterministically control the state of a photon and vice-versa. The interaction between free space photons and an atom is however intrinsically weak and many efforts have been dedicated to develop an efficient interface. Recently, it was shown that the propagation of light can be controlled by an atomic resonance coupled to a cavity or a single mode waveguide. Here we demonstrate that the state of a single artificial atom in a cavity can be efficiently controlled by a few-photon pulse. We study a quantum dot optimally coupled to an electrically-controlled cavity device, acting as a near optimal one-dimensional atom. By monitoring the exciton population through resonant fluorescence, we demonstrate Rabi oscillations with a $π$-pulse of only 3.8 photons on average. The probability to flip the exciton quantum bit with a single photon Fock state is calculated to reach 55% in the same device.
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Submitted 15 December, 2015;
originally announced December 2015.
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Contrasting influence of charged impurities on transport and gain in terahertz quantum cascade lasers
Authors:
Thomas Grange
Abstract:
Transport and gain properties of a resonant-phonon terahertz quantum cascade laser are calculated using nonequilibrium Green's functions. Impurity scattering is shown to be responsible for contrasting nonlinear effects in the transport and the gain properties. For typical doping concentrations, the current density is found to be weakly sensitive to the impurity scattering strength. In contrast, th…
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Transport and gain properties of a resonant-phonon terahertz quantum cascade laser are calculated using nonequilibrium Green's functions. Impurity scattering is shown to be responsible for contrasting nonlinear effects in the transport and the gain properties. For typical doping concentrations, the current density is found to be weakly sensitive to the impurity scattering strength. In contrast, the calculated gain is found to be very sensitive to the impurity scattering strength. This difference is attributed to the strong momentum dependence of the long-range coupling to charged impurities. Small-momentum impurity scattering is shown to be responsible for an incoherent regime of resonant tunneling processes. These new insights into the crucial role of impurity scattering open a new route of improvement of terahertz quantum cascade lasers by engineering of the doping profile.
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Submitted 29 October, 2015;
originally announced October 2015.
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Near optimal single photon sources in the solid state
Authors:
N. Somaschi,
V. Giesz,
L. De Santis,
J. C. Loredo,
M. P. Almeida,
G. Hornecker,
S. L. Portalupi,
T. Grange,
C. Anton,
J. Demory,
C. Gomez,
I. Sagnes,
N. D. Lanzillotti Kimura,
A. Lemaitre,
A. Auffeves,
A. G. White,
L. Lanco,
P. Senellart
Abstract:
Single-photons are key elements of many future quantum technologies, be it for the realisation of large-scale quantum communication networks for quantum simulation of chemical and physical processes or for connecting quantum memories in a quantum computer. Scaling quantum technologies will thus require efficient, on-demand, sources of highly indistinguishable single-photons. Semiconductor quantum…
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Single-photons are key elements of many future quantum technologies, be it for the realisation of large-scale quantum communication networks for quantum simulation of chemical and physical processes or for connecting quantum memories in a quantum computer. Scaling quantum technologies will thus require efficient, on-demand, sources of highly indistinguishable single-photons. Semiconductor quantum dots inserted in photonic structures are ultrabright single photon sources, but the photon indistinguishability is limited by charge noise induced by nearby surfaces. The current state of the art for indistinguishability are parametric down conversion single-photon sources, but they intrinsically generate multiphoton events and hence must be operated at very low brightness to maintain high single photon purity. To date, no technology has proven to be capable of providing a source that simultaneously generates near-unity indistinguishability and pure single photons with high brightness. Here, we report on such devices made of quantum dots in electrically controlled cavity structures. We demonstrate on-demand, bright and ultra-pure single photon generation. Application of an electrical bias on deterministically fabricated devices is shown to fully cancel charge noise effects. Under resonant excitation, an indistinguishability of $0.9956\pm0.0045$ is evidenced with a $g^{2}(0)=0.0028\pm0.0012$. The photon extraction of $65%$ and measured brightness of $0.154\pm0.015$ make this source $20$ times brighter than any source of equal quality. This new generation of sources open the way to a new level of complexity and scalability in optical quantum manipulation.
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Submitted 26 October, 2015; v1 submitted 22 October, 2015;
originally announced October 2015.
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Tunable cavity coupling of the zero phonon line of a nitrogen-vacancy defect in diamond
Authors:
S. Johnson,
P. R. Dolan,
T. Grange,
A. A. P. Trichet,
G. Hornecker,
Y. C. Chen,
L. Weng,
G. M. Hughes,
A. Auffèves,
J. M. Smith
Abstract:
We demonstrate the tunable enhancement of the zero phonon line of a single nitrogen-vacancy color center in diamond at cryogenic temperature. An open cavity fabricated using focused ion beam milling provides mode volumes as small as 1.24 $μ$m$^3$. In-situ tuning of the cavity resonance is achieved with piezoelectric actuators. At optimal coupling of the full open cavity the signal from individual…
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We demonstrate the tunable enhancement of the zero phonon line of a single nitrogen-vacancy color center in diamond at cryogenic temperature. An open cavity fabricated using focused ion beam milling provides mode volumes as small as 1.24 $μ$m$^3$. In-situ tuning of the cavity resonance is achieved with piezoelectric actuators. At optimal coupling of the full open cavity the signal from individual zero phonon line transitions is enhanced by about a factor of 10 and the overall emission rate of the NV$^-$ center is increased by 40% compared with that measured from the same center in the absence of cavity field confinement. This result is important for the realization of efficient spin-photon interfaces and scalable quantum computing using optically addressable solid state spin qubits.
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Submitted 18 June, 2015; v1 submitted 16 June, 2015;
originally announced June 2015.
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Cavity-Enhanced Two-Photon Interference using Remote Quantum Dot Sources
Authors:
V. Giesz,
S. L. Portalupi,
T. Grange,
C. Antón,
L. De Santis,
J. Demory,
N. Somaschi,
I. Sagnes,
A. Lemaître,
L. Lanco,
A. Auffeves,
P. Senellart
Abstract:
Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two bright quantum dot sources, a critical step for photon based quantum computation, has never been investigated. Here we report on such a measurement, taking advantage of a deterministic fabrication of the devices. We show that cavity quantum electrodynamic…
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Quantum dots in cavities have been shown to be very bright sources of indistinguishable single photons. Yet the quantum interference between two bright quantum dot sources, a critical step for photon based quantum computation, has never been investigated. Here we report on such a measurement, taking advantage of a deterministic fabrication of the devices. We show that cavity quantum electrodynamics can efficiently improve the quantum interference between remote quantum dot sources: poorly indistinguishable photons can still interfere with good contrast with high quality photons emitted by a source in the strong Purcell regime. Our measurements and calculations show that cavity quantum electrodynamics is a powerful tool for interconnecting several devices.
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Submitted 21 July, 2015; v1 submitted 27 May, 2015;
originally announced May 2015.
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Cavity-funneled generation of indistinguishable single photons from strongly dissipative quantum emitters
Authors:
Thomas Grange,
Gaston Hornecker,
David Hunger,
Jean-Philippe Poizat,
Jean-Michel Gerard,
Pascale Senellart,
Alexia Auffeves
Abstract:
We investigate theoretically the generation of indistinguishable single photons from a strongly dissipative quantum system placed inside an optical cavity. The degree of indistinguishability of photons emitted by the cavity is calculated as a function of the emitter-cavity coupling strength and the cavity linewidth. For a quantum emitter subject to strong pure dephasing, our calculations reveal th…
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We investigate theoretically the generation of indistinguishable single photons from a strongly dissipative quantum system placed inside an optical cavity. The degree of indistinguishability of photons emitted by the cavity is calculated as a function of the emitter-cavity coupling strength and the cavity linewidth. For a quantum emitter subject to strong pure dephasing, our calculations reveal that an unconventional regime of high indistinguishability can be reached for moderate emittercavity coupling strengths and high quality factor cavities. In this regime, the broad spectrum of a dissipative quantum system is funneled into the narrow lineshape of a cavity. The associated efficiency is found to greatly surpass spectral filtering effects. Our findings open the path towards on-chip scalable indistinguishable-photon emitting devices operating at room temperature.
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Submitted 6 February, 2015; v1 submitted 5 January, 2015;
originally announced January 2015.
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Phonon-tuned bright single-photon source
Authors:
Simone Luca Portalupi,
Gaston Hornecker,
Valérian Giesz,
Thomas Grange,
Aristide Lemaître,
Justin Demory,
Isabelle Sagnes,
Norberto D. Lanzillotti-Kimura,
Loïc Lanco,
Alexia Auffèves,
Pascale Senellart
Abstract:
Pure and bright single photon sources have recently been obtained by inserting solid-state emitters in photonic nanowires or microcavities. The cavity approach presents the attractive possibility to greatly increase the source operation frequency. However, it is perceived as technologically demanding because the emitter resonance must match the cavity resonance. Here we show that the spectral matc…
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Pure and bright single photon sources have recently been obtained by inserting solid-state emitters in photonic nanowires or microcavities. The cavity approach presents the attractive possibility to greatly increase the source operation frequency. However, it is perceived as technologically demanding because the emitter resonance must match the cavity resonance. Here we show that the spectral matching requirement is actually strongly lifted by the intrinsic coupling of the emitter to its environment. A single photon source consisting of a single InGaAs quantum dot inserted in a micropillar cavity is studied. Phonon coupling results in a large Purcell effect even when the quantum dot is detuned from the cavity resonance. The phonon-assisted cavity enhanced emission is shown to be a good single-photon source, with a brightness exceeding $40$ \% for a detuning range covering 15 cavity linewidths.
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Submitted 18 December, 2014;
originally announced December 2014.
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Electron transport in quantum wire superlattices
Authors:
Thomas Grange
Abstract:
Electronic transport is theoretically investigated in laterally confined semiconductor superlattices using the formalism of non-equilibrium Green's functions. The transport properties are calculated for nanowire superlattices of varying diameters, from the quantum dot superlattice regime to the quantum well superlattice regime. Scattering processes due to electron-phonon couplings, phonon anharmon…
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Electronic transport is theoretically investigated in laterally confined semiconductor superlattices using the formalism of non-equilibrium Green's functions. The transport properties are calculated for nanowire superlattices of varying diameters, from the quantum dot superlattice regime to the quantum well superlattice regime. Scattering processes due to electron-phonon couplings, phonon anharmonicity, charged impurities, surface and interface roughness and alloy disorder are included on a microscopic basis. Elastic scattering mechanisms are treated in a partial coherent way beyond the self-consistent Born approximation. The nature of transport along the superlattice is shown to depend dramatically on the lateral dimensionality. In the quantum wire regime, the electron velocity-field characteristics are predicted to deviate strongly from the standard Esaki-Tsu form, with pronounced current peaks due to integer and fractional resonances with optical phonons.
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Submitted 24 April, 2014; v1 submitted 18 December, 2013;
originally announced December 2013.
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Nanowire terahertz quantum cascade lasers
Authors:
Thomas Grange
Abstract:
Quantum cascade lasers made of nanowire axial heterostructures are proposed. The dissipative quantum dynamics of their carriers is theoretically investigated using non-equilibrium Green functions. Their transport and gain properties are calculated for varying nanowire thickness, from the classical-wire regime to the quantum-wire regime. Our calculation shows that the lateral quantum confinement pr…
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Quantum cascade lasers made of nanowire axial heterostructures are proposed. The dissipative quantum dynamics of their carriers is theoretically investigated using non-equilibrium Green functions. Their transport and gain properties are calculated for varying nanowire thickness, from the classical-wire regime to the quantum-wire regime. Our calculation shows that the lateral quantum confinement provided by the nanowires allows an increase of the maximum operation temperature and a strong reduction of the current density threshold compared to conventional terahertz quantum cascade lasers.
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Submitted 7 October, 2014; v1 submitted 7 January, 2013;
originally announced January 2013.
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Decoherence in quantum dots due to real and virtual transitions: a non-perturbative calculation
Authors:
Thomas Grange
Abstract:
We investigate theoretically acoustic phonon induced decoherence in quantum dots. We calculate the dephasing of fundamental (interband or intraband) optical transitions due to real and virtual transitions with higher energy levels. Up to two acoustic phonon processes (absorption and/or emission) are taken into account simultaneously in a non-perturbative manner. An analytic expression of acousti…
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We investigate theoretically acoustic phonon induced decoherence in quantum dots. We calculate the dephasing of fundamental (interband or intraband) optical transitions due to real and virtual transitions with higher energy levels. Up to two acoustic phonon processes (absorption and/or emission) are taken into account simultaneously in a non-perturbative manner. An analytic expression of acoustic phonon induced broadening is given as a function of the electron-phonon matrix elements and is physically interpreted. The theory is applied to the dephasing of intersublevel transitions in self-assembled quantum dots.
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Submitted 2 July, 2009;
originally announced July 2009.
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Polaron relaxation in self-assembled quantum dots: Breakdown of the semi-classical model
Authors:
T. Grange,
R. Ferreira,
G. Bastard
Abstract:
We calculate the lifetime of conduction band excited states in self-assembled quantum dots by taking into account LO-phonon-electron interaction and various anharmonic phonon couplings. We show that polaron relaxation cannot be accurately described by a semi-classical model. The contributions of different anharmonic decay channels are shown to depend strongly on the polaron energy. We calculate…
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We calculate the lifetime of conduction band excited states in self-assembled quantum dots by taking into account LO-phonon-electron interaction and various anharmonic phonon couplings. We show that polaron relaxation cannot be accurately described by a semi-classical model. The contributions of different anharmonic decay channels are shown to depend strongly on the polaron energy. We calculate the energy dependence of polaron lifetime and compare our results to available experimental measurements of polaron decay time in InAs/GaAs quantum dots.
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Submitted 30 November, 2007;
originally announced November 2007.
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Intersublevel Polaron Dephasing in Self-Assembled Quantum Dots
Authors:
E. A. Zibik,
T. Grange,
B. A. Carpenter,
R. Ferreira,
G. Bastard,
N. Q. Vinh,
P. J. Phillips,
M. J. Steer,
M. Hopkinson,
J. W. Cockburn,
M. S. Skolnick,
L. R. Wilson
Abstract:
Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy conduction band transition due to coherent acoustic phonon generation. The subsequent single exponential decay yields long intraband dephasing times of…
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Polaron dephasing processes are investigated in InAs/GaAs dots using far-infrared transient four wave mixing (FWM) spectroscopy. We observe an oscillatory behaviour in the FWM signal shortly (< 5 ps) after resonant excitation of the lowest energy conduction band transition due to coherent acoustic phonon generation. The subsequent single exponential decay yields long intraband dephasing times of 90 ps. We find excellent agreement between our measured and calculated FWM dynamics, and show that both real and virtual acoustic phonon processes are necessary to explain the temperature dependence of the polarization decay.
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Submitted 26 October, 2007;
originally announced October 2007.
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Evidence for excitonic polarons in InAs/GaAs quantum dots
Authors:
Vanessa Preisler,
Thomas Grange,
Robson Ferreira,
Louis-Anne De Vaulchier,
Yves Guldner,
Fransisco José Teran,
Marek Potemski,
Aristide Lemaître
Abstract:
We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixe…
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We investigate the interband transitions in several ensembles of self-assembled InAs/GaAs quantum dots by using photoluminescence excitation spectroscopy under strong magnetic field. Well defined resonances are observed in the spectra. A strong anticrossing between two transitions is observed in all samples, which cannot be accounted for by a purely excitonic model. The coupling between the mixed exciton-LO phonon states is calculated using the Fröhlich Hamiltonian. The excitonic polaron energies as well as the oscillator strengths of the interband transitions are determined. An anticrossing is predicted when two exciton-LO phonon states have close enough energies with phonon occupations which differ by one. A good agreement is found between the calculations and the experimental data evidencing the existence of excitonic polarons.
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Submitted 20 September, 2006;
originally announced September 2006.
