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Thermalization and Criticality on an Analog-Digital Quantum Simulator
Authors:
Trond I. Andersen,
Nikita Astrakhantsev,
Amir H. Karamlou,
Julia Berndtsson,
Johannes Motruk,
Aaron Szasz,
Jonathan A. Gross,
Alexander Schuckert,
Tom Westerhout,
Yaxing Zhang,
Ebrahim Forati,
Dario Rossi,
Bryce Kobrin,
Agustin Di Paolo,
Andrey R. Klots,
Ilya Drozdov,
Vladislav D. Kurilovich,
Andre Petukhov,
Lev B. Ioffe,
Andreas Elben,
Aniket Rath,
Vittorio Vitale,
Benoit Vermersch,
Rajeev Acharya,
Laleh Aghababaie Beni
, et al. (202 additional authors not shown)
Abstract:
Understanding how interacting particles approach thermal equilibrium is a major challenge of quantum simulators. Unlocking the full potential of such systems toward this goal requires flexible initial state preparation, precise time evolution, and extensive probes for final state characterization. We present a quantum simulator comprising 69 superconducting qubits which supports both universal qua…
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Understanding how interacting particles approach thermal equilibrium is a major challenge of quantum simulators. Unlocking the full potential of such systems toward this goal requires flexible initial state preparation, precise time evolution, and extensive probes for final state characterization. We present a quantum simulator comprising 69 superconducting qubits which supports both universal quantum gates and high-fidelity analog evolution, with performance beyond the reach of classical simulation in cross-entropy benchmarking experiments. Emulating a two-dimensional (2D) XY quantum magnet, we leverage a wide range of measurement techniques to study quantum states after ramps from an antiferromagnetic initial state. We observe signatures of the classical Kosterlitz-Thouless phase transition, as well as strong deviations from Kibble-Zurek scaling predictions attributed to the interplay between quantum and classical coarsening of the correlated domains. This interpretation is corroborated by injecting variable energy density into the initial state, which enables studying the effects of the eigenstate thermalization hypothesis (ETH) in targeted parts of the eigenspectrum. Finally, we digitally prepare the system in pairwise-entangled dimer states and image the transport of energy and vorticity during thermalization. These results establish the efficacy of superconducting analog-digital quantum processors for preparing states across many-body spectra and unveiling their thermalization dynamics.
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Submitted 8 July, 2024; v1 submitted 27 May, 2024;
originally announced May 2024.
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Demonstration of the Two-Fluxonium Cross-Resonance Gate
Authors:
Ebru Dogan,
Dario Rosenstock,
Loïck Le Guevel,
Haonan Xiong,
Raymond A. Mencia,
Aaron Somoroff,
Konstantin N. Nesterov,
Maxim G. Vavilov,
Vladimir E. Manucharyan,
Chen Wang
Abstract:
The superconducting fluxonium qubit has a great potential for high-fidelity quantum gates with its long coherence times and strong anharmonicity at the half flux quantum sweet spot. However, current implementations of two-qubit gates compromise fluxonium's coherence properties by requiring either a temporary population of the non-computational states or tuning the magnetic flux off the sweet spot.…
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The superconducting fluxonium qubit has a great potential for high-fidelity quantum gates with its long coherence times and strong anharmonicity at the half flux quantum sweet spot. However, current implementations of two-qubit gates compromise fluxonium's coherence properties by requiring either a temporary population of the non-computational states or tuning the magnetic flux off the sweet spot. Here we realize a fast all-microwave cross-resonance gate between two capacitively-coupled fluxoniums with the qubit dynamics well confined to the computational space. We demonstrate a direct CNOT gate in 70 ns with fidelity up to $\mathcal{F}=0.9949(6)$ despite the limitations of a sub-optimal measurement setup and device coherence. Our results project a possible pathway towards reducing the two-qubit error rate below $10^{-4}$ with present-day technologies.
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Submitted 25 April, 2022;
originally announced April 2022.
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Compact gate-based read-out of multiplexed quantum devices with a cryogenic CMOS active inductor
Authors:
L. Le Guevel,
G. Billiot,
S. De Franceschi,
A. Morel,
X. Jehl,
A. G. M. Jansen,
G. Pillonnet
Abstract:
In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of…
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In the strive for scalable quantum processors, significant effort is being devoted to the development of cryogenic classical hardware for the control and readout of a growing number of qubits. Here we report on a cryogenic circuit incorporating a CMOS-based active inductor enabling fast impedance measurements with a sensitivity of 10 aF and an input-referred noise of 3.7 aF/sqrt(Hz). This type of circuit is especially conceived for the readout of semiconductor spin qubits. As opposed to commonly used schemes based on dispersive rf reflectometry, which require mm-scale passive inductors, it allows for a markedly reduced footprint (50$μ$m $\times$ 60$μ$m), facilitating its integration in a scalable quantum-classical architecture. In addition, its active inductor results in a resonant circuit with tunable frequency and quality factor, enabling the optimization of readout sensitivity.
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Submitted 9 February, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
Authors:
H. Bohuslavskyi,
S. Barraud,
V. Barral,
M. Cassé,
L. Le Guevel,
L. Hutin,
B. Bertrand,
A. Crippa,
X. Jehl,
G. Pillonnet,
A. G. M. Jansen,
F. Arnaud,
P. Galy,
R. Maurand,
S. De Franceschi,
M. Sanquer,
M. Vinet
Abstract:
Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low te…
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Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low temperature. Then, the same analysis is performed by compensating $V_{TH}$ to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages ($V_{DD}$) in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product ($EDP$) can be significantly reduced at low temperature by applying a forward body bias voltage ($V_{FBB}$). We demonstrate that outstanding performance of RO in terms of speed ($τ_P$=37ps) and static power (7nA/stage) can be achieved at 4.3K with $V_{DD}$ reduced down to 0.325V.
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Submitted 14 March, 2019;
originally announced March 2019.
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Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs described with Band Broadening
Authors:
H. Bohuslavskyi,
A. G. M. Jansen,
S. Barraud,
V. Barral,
M. Cassé,
L. Le Guevel,
X. Jehl,
L. Hutin,
B. Bertrand,
G. Billiot,
G. Pillonnet,
F. Arnaud,
P. Galy,
S. De Franceschi,
M. Vinet,
M. Sanquer
Abstract:
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at leas…
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In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by $SS(T) = \ln10~k_BT/e$. However, recent low-temperature studies of different advanced CMOS technologies have reported $SS$(4K or lower) values that are at least an order of magnitude larger. Here, we present and analyze the saturation of $SS(T)$ in 28nm fully-depleted silicon-on-insulator (FD-SOI) devices for both n- and p-type MOSFETs of different gate oxide thicknesses and gate lengths down to 4K. Until now, the increase of interface-trap density close to the band edge as temperature decreases has been put forward to understand the saturation. Here, an original explanation of the phenomenon is presented by considering a disorder-induced tail in the density of states at the conduction (valence) band edge for the calculation of the MOS channel transport by applying Fermi-Dirac statistics. This results in a subthreshold $I_{D}\sim e^{eV_{GS}/k_BT_0}$ for $T_0=35$K with saturation value $SS(T<T_0) = \ln 10~k_BT_0/e$. The proposed model adequately describes the experimental data of $SS(T)$ from 300 down to 4K using $k_BT_0 \simeq 3$meV for the width of the exponential tail and can also accurately describe $SS(I_{D})$ within the whole subthreshold region. Our analysis allows a direct determination of the technology-dependent band-tail extension forming a crucial element in future compact modeling and design of cryogenic circuits.
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Submitted 13 March, 2019;
originally announced March 2019.
