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Strong atomic reconstruction in twisted bilayers of highly flexible InSe: Machine-Learned Interatomic Potential and continuum model approaches
Authors:
Samuel J. Magorrian,
Anas Siddiqui,
Nicholas D. M. Hine
Abstract:
The relaxation of atomic positions to their optimal structural arrangement is crucial for understanding the emergence of new physical behavior in long scale superstructures in twisted bilayers of two-dimensional materials. The amount of deviation from a rigid moiré structure will depend on the elastic properties of the constituent monolayers which for the twisted bilayer - the more flexible the mo…
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The relaxation of atomic positions to their optimal structural arrangement is crucial for understanding the emergence of new physical behavior in long scale superstructures in twisted bilayers of two-dimensional materials. The amount of deviation from a rigid moiré structure will depend on the elastic properties of the constituent monolayers which for the twisted bilayer - the more flexible the monolayers are, the lower the energy required to deform the layers to maximize the areas with an energetically optimal interlayer arrangement of atoms. We investigate this atomic reconstruction for twisted bilayers of highly flexible InSe. Results using two methods are demonstrated - first we train a machine-learned interatomic potential (MLIP) to enable fully atomistic relaxations of small-twist-angle large-length-scale moiré supercells while retaining density functional theory (DFT) level accuracy. We find substantial out-of-plane corrugation and in-plane domain formation for a wide range of twist angles and moiré length scales. We then adapt an existing continuum approach and show that it can reproduce some, but not all, features of the fully atomistic calculations.
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Submitted 27 June, 2024;
originally announced June 2024.
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Strain-dependent one-dimensional confinement channels in twisted bilayer 1T$'$-WTe$_2$
Authors:
Samuel J. Magorrian,
Nicholas D. M. Hine
Abstract:
The low symmetry and anistropic lattice of 1T$'$ WTe$_2$ is responsible for the existence of parallel one-dimensional channels in the moiré patterns of twisted bilayers. This gives the opportunity to explore moiré physics of a different nature to that widely observed in twisted bilayers of materials with hexagonal symmetries. Here, we combine plane-wave and linear-scaling density functional theory…
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The low symmetry and anistropic lattice of 1T$'$ WTe$_2$ is responsible for the existence of parallel one-dimensional channels in the moiré patterns of twisted bilayers. This gives the opportunity to explore moiré physics of a different nature to that widely observed in twisted bilayers of materials with hexagonal symmetries. Here, we combine plane-wave and linear-scaling density functional theory calculations to describe the electronic properties of twisted bilayer 1T$'$ WTe$_2$. For a small change in the lattice parameters of the constituent 1T$'$ WTe$_2$ monolayers, we find a substantial moiré-induced striped electrostatic potential landscape in the twisted bilayer, with a peak-to-trough magnitude $>$200~meV.
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Submitted 16 April, 2024;
originally announced April 2024.
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Band alignment and interlayer hybridisation in transition metal dichalcogenide/hexagonal boron nitride heterostructures
Authors:
S. J. Magorrian,
A. J. Graham,
N. Yeung,
F. Ferreira,
P. V. Nguyen,
A. Barinov,
V. I. Fal'ko,
N. R. Wilson,
N. D. M. Hine
Abstract:
In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN), an ubiquitous combination given the role of hBN as an encapsulating material. By c…
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In van der Waals heterostructures, the relative alignment of bands between layers, and the resulting band hybridisation, are key factors in determining a range of electronic properties. This work examines these effects for heterostructures of transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN), an ubiquitous combination given the role of hBN as an encapsulating material. By comparing results of density functional calculations with experimental angle-resolved photoemission spectroscopy (ARPES) results, we explore the hybridisation between the valence states of the TMD and hBN layers, and show that it introduces avoided crossings between the TMD and hBN bands, with umklapp processes opening `ghost' avoided crossings in individual bands. Comparison between DFT and ARPES spectra for the MoSe$_2$/hBN heterostructure shows that the valence bands of MoSe$_2$ and hBN are significantly further separated in energy in experiment as compared to DFT. We then show that a novel scissor operator can be applied to the hBN valence states in the DFT calculations, to correct the band alignment and enable quantitative comparison to ARPES, explaining avoided crossings and other features of band visibility in the ARPES spectra.
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Submitted 5 October, 2022; v1 submitted 19 July, 2022;
originally announced July 2022.
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Ab initio study on the atomic and electronic structures of twisted InSe bilayer
Authors:
Siow Mean Loh,
Nicholas D. M. Hine
Abstract:
The electronic properties of the twisted InSe bilayer are studied by large-scale density functional theory. Spectral Function Unfolding reveals that the electronic structure of the twisted system can be described in terms of a combination of features of the bandstructures of the aligned InSe bilayer with different stacking configurations, enabling predictions of the band gap and the effective mass…
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The electronic properties of the twisted InSe bilayer are studied by large-scale density functional theory. Spectral Function Unfolding reveals that the electronic structure of the twisted system can be described in terms of a combination of features of the bandstructures of the aligned InSe bilayer with different stacking configurations, enabling predictions of the band gap and the effective mass for holes. The effective mass for holes in the twisted InSe bilayer is shown to be influenced primarily by the interlayer distance. The intralayer and interlayer exciton binding energies are thus calculated based on a model recently developed by Ruiz-Tijerina et al. We apply similar analysis to the trilayer heterostructure InSe/hBN/InSe: its electronic structure is shown to be well-described by the superposition of band structures of two InSe monolayers with a small coupling through the hBN layer.
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Submitted 25 February, 2022;
originally announced February 2022.
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Strong In-plane Anisotropy in the Electronic Properties of Doped Transition Metal Dichalcogenides exhibited in W1-xNbxS2
Authors:
Siow Mean Loh,
Xue Xia,
Neil R. Wilson,
Nicholas D. M. Hine
Abstract:
In this work, we study the electronic properties of monolayer transition metal dichalcogenide materials subjected to aliovalent doping, using Nb-doped WS2 as an exemplar. Scanning transmission electron microscopy imaging of the as-grown samples reveals an anisotropic Nb dopant distribution, prompting our investigation of anisotropy in electronic properties. Through electronic structure calculation…
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In this work, we study the electronic properties of monolayer transition metal dichalcogenide materials subjected to aliovalent doping, using Nb-doped WS2 as an exemplar. Scanning transmission electron microscopy imaging of the as-grown samples reveals an anisotropic Nb dopant distribution, prompting our investigation of anisotropy in electronic properties. Through electronic structure calculations on supercells representative of observed structures, we confirm that local Nb-atom distributions are consistent with energetic considerations, although kinetic processes occurring during sample growth must be invoked to explain the overall symmetry-breaking. We perform effective bandstructure and conductivity calculations on realistic models of the material that demonstrate that a high level of anisotropy can be expected in electronic properties including conductivity and mobility.
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Submitted 20 April, 2021; v1 submitted 27 January, 2021;
originally announced January 2021.
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Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys
Authors:
Xue Xia,
Siow Mean Loh,
Jacob Viner,
Natalie C. Teutsch,
Abigail J. Graham,
Viktor Kandyba,
Alexei Barinov,
Ana M. Sanchez,
David C. Smith,
Nicholas D. M. Hine,
Neil R. Wilson
Abstract:
Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (MX2 where M= Mo or W and X=S or Se) can be grown as high-quality materials with low defect concentrations. Here we investigate the atomic and electronic structure…
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Alloying enables engineering of the electronic structure of semiconductors for optoelectronic applications. Due to their similar lattice parameters, the two-dimensional semiconducting transition metal dichalcogenides of the MoWSeS group (MX2 where M= Mo or W and X=S or Se) can be grown as high-quality materials with low defect concentrations. Here we investigate the atomic and electronic structure of Mo(1-x)WxS2 alloys using a combination of high-resolution experimental techniques and simulations. Analysis of the Mo and W atomic positions in these alloys, grown by chemical vapour transport, shows that they are randomly distributed, consistent with Monte Carlo simulations that use interaction energies determined from first-principles calculations. Electronic structure parameters are directly determined from angle resolved photoemission spectroscopy measurements. These show that the spin-orbit splitting at the valence band edge increases linearly with W content from MoS2 to WS2, in agreement with linear-scaling density functional theory (LS-DFT) predictions. The spin-orbit splitting at the conduction band edge is predicted to reduce to zero at intermediate compositions. Despite this, polarisation-resolved photoluminescence spectra on monolayer Mo0.5W0.5S2 show significant circular dichroism, indicating that spin-valley locking is retained. These results demonstrate that alloying is an important tool for controlling the electronic structure of MX2 for spintronic and valleytronic applications.
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Submitted 10 September, 2020;
originally announced September 2020.
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Ghost anti-crossings caused by interlayer umklapp hybridization of bands in 2D heterostructures
Authors:
Abigail J. Graham,
Johanna Zultak,
Matthew J. Hamer,
Viktor Zolyomi,
Samuel Magorrian,
Alexei Barinov,
Viktor Kandyba,
Alessio Giampietri,
Andrea Locatelli,
Francesca Genuzio,
Natalie C. Teutsch,
Temok Salazar,
Nicholas D. M. Hine,
Vladimir I. Fal'ko,
Roman V. Gorbachev,
Neil R. Wilson
Abstract:
In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattic…
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In two-dimensional heterostructures, crystalline atomic layers with differing lattice parameters can stack directly one on another. The resultant close proximity of atomic lattices with differing periodicity can lead to new phenomena. For umklapp processes, this opens the possibility for interlayer umklapp scattering, where interactions are mediated by the transfer of momenta to or from the lattice in the neighbouring layer. Using angle-resolved photoemission spectroscopy to study a graphene on InSe heterostructure, we present evidence that interlayer umklapp processes can cause hybridization between bands from neighbouring layers in regions of the Brillouin zone where bands from only one layer are expected, despite no evidence for moir/'e-induced replica bands. This phenomenon manifests itself as 'ghost' anti-crossings in the InSe electronic dispersion. Applied to a range of suitable 2DM pairs, this phenomenon of interlayer umklapp hybridization can be used to create strong mixing of their electronic states, giving a new tool for twist-controlled band structure engineering.
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Submitted 8 January, 2021; v1 submitted 27 August, 2020;
originally announced August 2020.
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ONETEP + TOSCAM: uniting dynamical mean field theory and linear-scaling density functional theory
Authors:
Edward B. Linscott,
Daniel J. Cole,
Nicholas D. M. Hine,
Michael C. Payne,
Cédric Weber
Abstract:
We introduce the unification of dynamical mean field theory (DMFT) and linear-scaling density functional theory (DFT), as recently implemented in ONETEP, a linear-scaling DFT package, and TOSCAM, a DMFT toolbox. This code can account for strongly correlated electronic behavior while simultaneously including the effects of the environment, making it ideally suited for studying complex and heterogen…
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We introduce the unification of dynamical mean field theory (DMFT) and linear-scaling density functional theory (DFT), as recently implemented in ONETEP, a linear-scaling DFT package, and TOSCAM, a DMFT toolbox. This code can account for strongly correlated electronic behavior while simultaneously including the effects of the environment, making it ideally suited for studying complex and heterogeneous systems containing transition metals and lanthanides, such as metalloproteins. We systematically introduce the necessary formalism, which must account for the non-orthogonal basis set used by ONETEP. In order to demonstrate the capabilities of this code, we apply it to carbon monoxide-ligated iron porphyrin and explore the distinctly quantum-mechanical character of the iron $3d$ electrons during the process of photodissociation.
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Submitted 1 May, 2020; v1 submitted 18 November, 2019;
originally announced November 2019.
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Visualizing electrostatic gating effects in two-dimensional heterostructures
Authors:
Paul V. Nguyen,
Natalie C. Teutsch,
Nathan P. Wilson,
Joshua Kahn,
Xue Xia,
Viktor Kandyba,
Alexei Barinov,
Gabriel Constantinescu,
Nicholas D. M. Hine,
Xiaodong Xu,
David H. Cobden,
Neil R. Wilson
Abstract:
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body sp…
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The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices, we observe a shift of the chemical potential by 0.6 eV across the Dirac point as a gate voltage is applied. In several 2D semiconductors we see the conduction band edge appear as electrons accumulate, establishing its energy and momentum, and observe significant band-gap renormalization at low densities. We also show that micro-ARPES and optical spectroscopy can be applied to a single device, allowing rigorous study of the relationship between gate-controlled electronic and excitonic properties.
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Submitted 15 April, 2019;
originally announced April 2019.
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Catalog of New K2 Exoplanet Candidates from Citizen Scientists
Authors:
Jon K. Zink,
Kevin K. Hardegree-Ullman,
Jessie L. Christiansen,
Ian J. M. Crossfield,
Erik A. Petigura,
Chris J. Lintott,
John H. Livingston,
David R. Ciardi,
Geert Barentsen,
Courtney D. Dressing,
Alexander Ye,
Joshua E. Schlieder,
Kevin Acres,
Peter Ansorge,
Dario Arienti,
Elisabeth Baeten,
Victoriano Canales Cerd,
Itayi Chitsiga,
Maxwell Daly,
James Damboiu,
Martin Ende,
Adnan Erdag,
Stiliyan Evstatiev,
Joseph Henderson,
David Hine
, et al. (12 additional authors not shown)
Abstract:
We provide 28 new planet candidates that have been vetted by citizen scientists and expert astronomers. This catalog contains 9 likely rocky candidates ($R_{pl} < 2.0R_\oplus$) and 19 gaseous candidates ($R_{pl} > 2.0R_\oplus$). Within this list we find one multi-planet system (EPIC 246042088). These two sub-Neptune ($2.99 \pm 0.02R_\oplus$ and $3.44 \pm 0.02R_\oplus$) planets exist in a near 3:2…
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We provide 28 new planet candidates that have been vetted by citizen scientists and expert astronomers. This catalog contains 9 likely rocky candidates ($R_{pl} < 2.0R_\oplus$) and 19 gaseous candidates ($R_{pl} > 2.0R_\oplus$). Within this list we find one multi-planet system (EPIC 246042088). These two sub-Neptune ($2.99 \pm 0.02R_\oplus$ and $3.44 \pm 0.02R_\oplus$) planets exist in a near 3:2 orbital resonance. The discovery of this multi-planet system is important in its addition to the list of known multi-planet systems within the K2 catalog, and more broadly in understanding the multiplicity distribution of the exoplanet population (Zink et al. 2019). The candidates on this list are anticipated to generate RV amplitudes of 0.2-18 m/s, many within the range accessible to current facilities.
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Submitted 5 March, 2019; v1 submitted 1 March, 2019;
originally announced March 2019.
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Multifractality of ab initio wave functions in doped semiconductors
Authors:
Edoardo G. Carnio,
Nicholas D. M. Hine,
Rudolf A. Römer
Abstract:
In Refs. [1,2] we have shown how a combination of modern linear-scaling DFT, together with a subsequent use of large, effective tight-binding Hamiltonians, allows to compute multifractal wave functions yielding the critical properties of the Anderson metal-insulator transition (MIT) in doped semiconductors. This combination allowed us to construct large and atomistically realistic samples of sulfu…
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In Refs. [1,2] we have shown how a combination of modern linear-scaling DFT, together with a subsequent use of large, effective tight-binding Hamiltonians, allows to compute multifractal wave functions yielding the critical properties of the Anderson metal-insulator transition (MIT) in doped semiconductors. This combination allowed us to construct large and atomistically realistic samples of sulfur-doped silicon (Si:S). The critical properties of such systems and the existence of the MIT are well known, but experimentally determined values of the critical exponent $ν$ close to the transition have remained different from those obtained by the standard tight-binding Anderson model. In Ref. [1], we found that this ``exponent puzzle'' can be resolved when using our novel \emph{ab initio} approach based on scaling of multifractal exponents in the realistic impurity band for Si:S. Here, after a short review of multifractality, we give details of the multifractal analysis as used in [1] and show the obtained \emph{critical} multifractal spectrum at the MIT for Si:S.
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Submitted 25 February, 2019;
originally announced February 2019.
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Resolution of the exponent puzzle for the Anderson transition in doped semiconductors
Authors:
Edoardo G. Carnio,
Nicholas D. M. Hine,
Rudolf A. Römer
Abstract:
The Anderson metal-insulator transition (MIT) is central to our understanding of the quantum mechanical nature of disordered materials. Despite extensive efforts by theory and experiment, there is still no agreement on the value of the critical exponent $ν$ describing the universality of the transition --- the so-called "exponent puzzle". In this work, going beyond the standard Anderson model, we…
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The Anderson metal-insulator transition (MIT) is central to our understanding of the quantum mechanical nature of disordered materials. Despite extensive efforts by theory and experiment, there is still no agreement on the value of the critical exponent $ν$ describing the universality of the transition --- the so-called "exponent puzzle". In this work, going beyond the standard Anderson model, we employ ab initio methods to study the MIT in a realistic model of a doped semiconductor. We use linear-scaling DFT to simulate prototypes of sulfur-doped silicon (Si:S). From these we build larger tight-binding models close to the critical concentration of the MIT. When the dopant concentration is increased, an impurity band forms and eventually delocalizes. We characterize the MIT via multifractal finite-size scaling, obtaining the phase diagram and estimates of $ν$. Our results suggest an explanation of the long-standing exponent puzzle, which we link to the hybridization of conduction and impurity bands.
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Submitted 4 December, 2018; v1 submitted 4 October, 2017;
originally announced October 2017.
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Multi-dimensional Tensor Network Simulation of Open Quantum Dynamics in Singlet Fission
Authors:
Florian A. Y. N. Schröder,
David H. P. Turban,
Andrew J. Musser,
Nicholas D. M. Hine,
Alex W. Chin
Abstract:
We develop a powerful tree tensor network states method that is capable of simulating exciton-phonon quantum dynamics of larger molecular complexes and open quantum systems with multiple bosonic environments. We interface this method with ab initio density functional theory to study singlet exciton fission (SF) in a pentacene dimer. With access to the full vibronic many-body wave function, we trac…
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We develop a powerful tree tensor network states method that is capable of simulating exciton-phonon quantum dynamics of larger molecular complexes and open quantum systems with multiple bosonic environments. We interface this method with ab initio density functional theory to study singlet exciton fission (SF) in a pentacene dimer. With access to the full vibronic many-body wave function, we track and assign the contributions of different symmetry classes of vibrations to SF and derive energy surfaces, enabling us to dissect, understand, and describe the strongly coupled electronic and vibrational dynamics, relaxation, and reduced state cooling. This directly exposes the rich possibilities of exploiting the functional interplay of molecular symmetry, electronic structure and vibrational dynamics in SF material design. The described method can be similarly applied to other complex (bio-) molecular systems, characterised by a rich manifold of electronic states and vibronic coupling driving non-adiabatic dynamics.
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Submitted 3 October, 2017;
originally announced October 2017.
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Supercell convergence of charge-transfer energies in pentacene molecular crystals from constrained DFT
Authors:
David H. P. Turban,
Gilberto Teobaldi,
David D. O'Regan,
Nicholas D. M. Hine
Abstract:
Singlet fission (SF) is a multi-exciton generation process that could be harnessed to improve the efficiency of photovoltaic devices. Experimentally, systems derived from the pentacene molecule have been shown to exhibit ultrafast SF with high yields. Charge-transfer (CT) configurations are likely to play an important role as intermediates in the SF process in these systems. In molecular crystals,…
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Singlet fission (SF) is a multi-exciton generation process that could be harnessed to improve the efficiency of photovoltaic devices. Experimentally, systems derived from the pentacene molecule have been shown to exhibit ultrafast SF with high yields. Charge-transfer (CT) configurations are likely to play an important role as intermediates in the SF process in these systems. In molecular crystals, electrostatic screening effects and band formation can be significant in lowering the energy of CT states, enhancing their potential to effectively participate in SF. In order to simulate these, it desirable to adopt a computational approach which is acceptably accurate, relatively inexpensive, which and scales well to larger systems, thus enabling the study of screening effects. We propose a novel, electrostatically-corrected constrained Density Functional Theory (cDFT) approach as a low-cost solution to the calculation of CT energies in molecular crystals such as pentacene. Here we consider an implementation in the context of the ONETEP linear-scaling DFT code, but our electrostatic correction method is in principle applicable in combination with any constrained DFT implementation, also outside the linear-scaling framework. Our newly developed method allows us to estimate CT energies in the infinite crystal limit, and with these to validate the accuracy of the cluster approximation.
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Submitted 22 March, 2016; v1 submitted 7 March, 2016;
originally announced March 2016.
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Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy
Authors:
Neil R. Wilson,
Paul V. Nguyen,
Kyle L. Seyler,
Pasqual Rivera,
Alexander J. Marsden,
Zachary P. L. Laker,
Gabriel C. Constantinescu,
Viktor Kandyba,
Alexei Barinov,
Nicholas D. M. Hine,
Xiaodong Xu,
David H. Cobden
Abstract:
Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of an…
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Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of angle-resolved photoemission spectroscopy with submicron spatial resolution (μ-ARPES) offers the capability to measure small samples, but the energy resolution obtained for such exfoliated samples to date (~0.5 eV) has been inadequate. Here, we show that by suitable heterostructure sample design the full potential of μ-ARPES can be realized. We focus on MoSe2/WSe2 van der Waals heterostructures, which are 2D analogs of 3D semiconductor heterostructures. We find that in a MoSe2/WSe2 heterobilayer the bands in the K valleys are weakly hybridized, with the conduction and valence band edges originating in the MoSe2 and WSe2 respectively. There is stronger hybridization at the Γ point, but the valence band edge remains at the K points. This is consistent with the recent observation of interlayer excitons where the electron and hole are valley polarized but in opposite layers. We determine the valence band offset to be 300 meV, which combined with photoluminescence measurements implies that the binding energy of interlayer excitons is at least 200 meV, comparable with that of intralayer excitons.
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Submitted 21 January, 2016;
originally announced January 2016.
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Linear-scaling time-dependent density-functional theory (TDDFT) beyond the Tamm-Dancoff approximation: obtaining efficiency and accuracy with in situ optimised local orbitals
Authors:
Tim J. Zuehlsdorff,
Nicholas D. M. Hine,
Mike C. Payne,
Peter D. Haynes
Abstract:
We present a solution of the full TDDFT eigenvalue equation in the linear response formalism exhibiting a linear-scaling computational complexity with system size, without relying on the simplifying Tamm-Dancoff approximation (TDA). The implementation relies on representing the occupied and unoccupied subspace with two different sets of in situ optimised localised functions, yielding a very compac…
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We present a solution of the full TDDFT eigenvalue equation in the linear response formalism exhibiting a linear-scaling computational complexity with system size, without relying on the simplifying Tamm-Dancoff approximation (TDA). The implementation relies on representing the occupied and unoccupied subspace with two different sets of in situ optimised localised functions, yielding a very compact and efficient representation of the transition density matrix of the excitation with the accuracy associated with a systematic basis set. The TDDFT eigenvalue equation is solved using a preconditioned conjugate-gradients algorithm that is very memory-efficient. The algorithm is validated on a test molecule and a good agreement with results obtained from standard quantum chemistry packages is found, with the preconditioner yielding a significant improvement in convergence rates. The method developed in this work is then used to reproduce experimental results of the absorption spectrum of bacteriochlorophyll (BChl) in an organic solvent, where it is demonstrated that the TDA fails to reproduce the main features of the low energy spectrum, while the full TDDFT equation yields results in good qualitative agreement with experimental data. Furthermore, the need for explicitly including parts of the solvent into the TDDFT calculations is highlighted, making the treatment of large system sizes necessary that are well within reach of the capabilities of the algorithm introduced here. Finally, the linear-scaling properties of the algorithm are demonstrated by computing the lowest excitation energy of BChl in solution. The largest systems considered in this work are of the same order of magnitude as a variety of pigment-protein complexes, opening up the possibility of studying their properties without having to resort to any semiclassical approximations to parts of the protein environment.
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Submitted 30 November, 2015; v1 submitted 29 July, 2015;
originally announced July 2015.
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The elevated Curie temperature and half-metallicity in the ferromagnetic semiconductor La$_{x}$Eu$_{1-x}$O
Authors:
Pedro M. S. Monteiro,
Peter J. Baker,
Nicholas D. M. Hine,
Nina-J. Steinke,
Adrian Ionescu,
Joshaniel F. K. Cooper,
Crispin H. W. Barnes,
Christian J. Kinane,
Zaher Salman,
Andrew R. Wildes,
Thomas Prokscha,
Sean Langridge
Abstract:
Here we study the effect of La doping in EuO thin films using SQUID magnetometry, muon spin rotation ($μ$SR), polarized neutron reflectivity (PNR), and density functional theory (DFT). The $μ$SR data shows that the La$_{0.15}$Eu$_{0.85}$O is homogeneously magnetically ordered up to its elevated $T_{\rm C}$. It is concluded that bound magnetic polaron behavior does not explain the increase in…
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Here we study the effect of La doping in EuO thin films using SQUID magnetometry, muon spin rotation ($μ$SR), polarized neutron reflectivity (PNR), and density functional theory (DFT). The $μ$SR data shows that the La$_{0.15}$Eu$_{0.85}$O is homogeneously magnetically ordered up to its elevated $T_{\rm C}$. It is concluded that bound magnetic polaron behavior does not explain the increase in $T_{\rm C}$ and an RKKY-like interaction is consistent with the $μ$SR data. The estimation of the magnetic moment by DFT simulations concurs with the results obtained by PNR, showing a reduction of the magnetic moment per La$_{x}$Eu$_{1-x}$O for increasing lanthanum doping. This reduction of the magnetic moment is explained by the reduction of the number of Eu-4$f$ electrons present in all the magnetic interactions in EuO films. Finally, we show that an upwards shift of the Fermi energy with La or Gd doping gives rise to half-metallicity for doping levels as high as 3.2 %.
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Submitted 20 May, 2015;
originally announced May 2015.
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Tracing potential energy surfaces of electronic excitations via their transition origins: application to Oxirane
Authors:
Jian-Hao Li,
Tim J. Zuehlsdorff,
Mike C. Payne,
Nicholas D. M. Hine
Abstract:
We show that the transition origins of electronic excitations identified by quantified natural transition orbital (QNTO) analysis can be employed to connect potential energy surfaces (PESs) according to their character across a widerange of molecular geometries. This is achieved by locating the switching of transition origins of adiabatic potential surfaces as the geometry changes. The transition…
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We show that the transition origins of electronic excitations identified by quantified natural transition orbital (QNTO) analysis can be employed to connect potential energy surfaces (PESs) according to their character across a widerange of molecular geometries. This is achieved by locating the switching of transition origins of adiabatic potential surfaces as the geometry changes. The transition vectors for analysing transition origins are provided by linear response time-dependent density functional theory (TDDFT) calculations under the Tamm-Dancoff approximation. We study the photochemical CO ring opening of oxirane as an example and show that the results corroborate the traditional Gomer-Noyes mechanism derived experimentally. The knowledge of specific states for the reaction also agrees well with that given by previous theoretical work using TDDFT surface-hopping dynamics that was validated by high-quality quantum Monte Carlo calculations. We also show that QNTO can be useful for considerably larger and more complex systems: by projecting the excitations to those of a reference oxirane molecule, the approach is able to identify and analyse specific excitations of a trans-2,3-diphenyloxirane molecule.
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Submitted 16 April, 2015; v1 submitted 13 December, 2014;
originally announced December 2014.
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Simulations of Nanocrystals Under Pressure: Combining Electronic Enthalpy and Linear-Scaling Density-Functional Theory
Authors:
Niccolò R. C. Corsini,
Andrea Greco,
Nicholas D. M. Hine,
Carla Molteni,
Peter D. Haynes
Abstract:
We present an implementation in a linear-scaling density-functional theory code of an electronic enthalpy method, which has been found to be natural and efficient for the ab initio calculation of finite systems under hydrostatic pressure. Based on a definition of the system volume as that enclosed within an electronic density isosurface [Phys. Rev. Lett., 94, 145501 (2005)], it supports both geome…
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We present an implementation in a linear-scaling density-functional theory code of an electronic enthalpy method, which has been found to be natural and efficient for the ab initio calculation of finite systems under hydrostatic pressure. Based on a definition of the system volume as that enclosed within an electronic density isosurface [Phys. Rev. Lett., 94, 145501 (2005)], it supports both geometry optimizations and molecular dynamics simulations. We introduce an approach for calibrating the parameters defining the volume in the context of geometry optimizations and discuss their significance. Results in good agreement with simulations using explicit solvents are obtained, validating our approach. Size-dependent pressure-induced structural transformations and variations in the energy gap of hydrogenated silicon nanocrystals are investigated, including one comparable in size to recent experiments. A detailed analysis of the polyamorphic transformations reveals three types of amorphous structures and their persistence on depressurization is assessed.
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Submitted 31 July, 2013; v1 submitted 24 May, 2013;
originally announced May 2013.
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Anisotropic charge screening and supercell size convergence of defect formation energies
Authors:
Samuel T. Murphy,
Nicholas D. M. Hine
Abstract:
One of the main sources of error associated with the calculation of defect formation energies using plane-wave Density Functional Theory (DFT) is finite size error resulting from the use of relatively small simulation cells and periodic boundary conditions. Most widely-used methods for correcting this error, such as that of Makov and Payne, assume that the dielectric response of the material is is…
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One of the main sources of error associated with the calculation of defect formation energies using plane-wave Density Functional Theory (DFT) is finite size error resulting from the use of relatively small simulation cells and periodic boundary conditions. Most widely-used methods for correcting this error, such as that of Makov and Payne, assume that the dielectric response of the material is isotropic and can be described using a scalar dielectric constant $ε$. However, this is strictly only valid for cubic crystals, and cannot work in highly-anisotropic cases. Here we introduce a variation of the technique of extrapolation based on the Madelung potential, that allows the calculation of well converged dilute limit defect formation energies in non-cubic systems with highly anisotropic dielectric properties. As an example of the implementation of this technique we study a selection of defects in the ceramic oxide Li$_2$TiO$_3$ which is currently being considered as a lithium battery material and a breeder material for fusion reactors.
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Submitted 22 March, 2013; v1 submitted 21 March, 2013;
originally announced March 2013.
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Linear-scaling time-dependent density-functional theory in the linear response formalism
Authors:
Tim J. Zuehlsdorff,
Nicholas D. M. Hine,
James S. Spencer,
Nicholas M. Harrison,
D. Jason Riley,
Peter D. Haynes
Abstract:
We present an implementation of time-dependent density-functional theory (TDDFT) in the linear response formalism enabling the calculation of low energy optical absorption spectra for large molecules and nanostructures. The method avoids any explicit reference to canonical representations of either occupied or virtual Kohn-Sham states and thus achieves linear-scaling computational effort with syst…
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We present an implementation of time-dependent density-functional theory (TDDFT) in the linear response formalism enabling the calculation of low energy optical absorption spectra for large molecules and nanostructures. The method avoids any explicit reference to canonical representations of either occupied or virtual Kohn-Sham states and thus achieves linear-scaling computational effort with system size. In contrast to conventional localised orbital formulations, where a single set of localised functions is used to span the occupied and unoccupied state manifold, we make use of two sets of in situ optimised localised orbitals, one for the occupied and one for the unoccupied space. This double representation approach avoids known problems of spanning the space of unoccupied Kohn-Sham states with a minimal set of localised orbitals optimised for the occupied space, while the in situ optimisation procedure allows for efficient calculations with a minimal number of functions. The method is applied to a number of medium sized organic molecules and a good agreement with traditional TDDFT methods is observed. Furthermore, linear scaling of computational cost with system size is demonstrated on a system of carbon nanotubes.
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Submitted 15 July, 2013; v1 submitted 1 March, 2013;
originally announced March 2013.
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Electrostatic considerations affecting the calculated HOMO-LUMO gap in protein molecules
Authors:
Greg Lever,
Daniel J Cole,
Nicholas D M Hine,
Peter D Haynes,
Mike C Payne
Abstract:
A detailed study of energy differences between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO gaps) in protein systems and water clusters is presented. Recent work questioning the applicability of Kohn-Sham density-functional theory to proteins and large water clusters (E. Rudberg, J. Phys.: Condens. Mat. 2012, 24, 072202) has demonstrated vanishing HOMO-LUMO gaps for the…
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A detailed study of energy differences between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO gaps) in protein systems and water clusters is presented. Recent work questioning the applicability of Kohn-Sham density-functional theory to proteins and large water clusters (E. Rudberg, J. Phys.: Condens. Mat. 2012, 24, 072202) has demonstrated vanishing HOMO-LUMO gaps for these systems, which is generally attributed to the treatment of exchange in the functional used. The present work shows that the vanishing gap is, in fact, an electrostatic artefact of the method used to prepare the system. Practical solutions for ensuring the gap is maintained when the system size is increased are demonstrated. This work has important implications for the use of large-scale density-functional theory in biomolecular systems, particularly in the simulation of photoemission, optical absorption and electronic transport, all of which depend critically on differences between energies of molecular orbitals.
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Submitted 19 February, 2013;
originally announced February 2013.
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Bromophenyl functionalization of carbon nanotubes : an ab initio study
Authors:
Jason Beaudin,
Jonathan Laflamme Janssen,
Nicholas D. M. Hine,
Peter D. Haynes,
Michel Côté
Abstract:
We study the thermodynamics of bromophenyl functionalization of carbon nanotubes with respect to diameter and metallic/insulating character using density-functional theory (DFT). On one hand, we show that the activation energy for the grafting of a bromophenyl molecule onto a semiconducting zigzag nanotube ranges from 0.73 eV to 0.76 eV without any clear trend with respect to diameter within numer…
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We study the thermodynamics of bromophenyl functionalization of carbon nanotubes with respect to diameter and metallic/insulating character using density-functional theory (DFT). On one hand, we show that the activation energy for the grafting of a bromophenyl molecule onto a semiconducting zigzag nanotube ranges from 0.73 eV to 0.76 eV without any clear trend with respect to diameter within numerical accuracy. On the other hand, the binding energy of a single bromophenyl molecule shows a clear diameter dependence and ranges from 1.51 eV for a (8,0) zigzag nanotube to 0.83 eV for a (20,0) zigzag nanotube. This is in part explained by the transition from sp2 to sp3 bonding occurring to a carbon atom of a nanotube when a phenyl is grafted to it and the fact that smaller nanotubes are closer to a sp3 hybridization than larger ones due to increased curvature. Since a second bromophenyl unit can attach without energy barrier next to an isolated grafted unit, they are assumed to exist in pairs. The para configuration is found to be favored for the pairs and their binding energy decreases with increasing diameter, ranging from 4.34 eV for a (7,0) nanotube to 2.27 eV for a (29,0) nanotube. An analytic form for this radius dependence is derived using a tight binding hamiltonian and first order perturbation theory. The 1/R^2 dependance obtained (where R is the nanotube radius) is verified by our DFT results within numerical accuracy. Finally, metallic nanotubes are found to be more reactive than semiconducting nanotubes, a feature that can be explained by a non-zero density of states at the Fermi level for metallic nanotubes.
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Submitted 3 October, 2012;
originally announced October 2012.
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Calculating dispersion interactions using maximally-localized Wannier functions
Authors:
Lampros Andrinopoulos,
Nicholas D. M. Hine,
Arash A. Mostofi
Abstract:
We investigate a recently developed approach [P. L. Silvestrelli, Phys. Rev. Lett. 100, 053002 (2008); J. Phys. Chem. A 113, 5224 (2009)] that uses maximally localized Wannier functions to evaluate the van der Waals contribution to the total energy of a system calculated with density-functional theory. We test it on a set of atomic and molecular dimers of increasing complexity (argon, methane, eth…
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We investigate a recently developed approach [P. L. Silvestrelli, Phys. Rev. Lett. 100, 053002 (2008); J. Phys. Chem. A 113, 5224 (2009)] that uses maximally localized Wannier functions to evaluate the van der Waals contribution to the total energy of a system calculated with density-functional theory. We test it on a set of atomic and molecular dimers of increasing complexity (argon, methane, ethene, benzene, phthalocyanine, and copper phthalocyanine) and demonstrate that the method, as originally proposed, has a number of shortcomings that hamper its predictive power. In order to overcome these problems, we have developed and implemented a number of improvements to the method and show that these modifications give rise to calculated binding energies and equilibrium geometries that are in closer agreement to results of quantum-chemical coupled-cluster calculations.
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Submitted 11 June, 2012;
originally announced June 2012.
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Importance of many body effects in the kernel of hemoglobin for ligand binding
Authors:
Cedric Weber,
David D. O'Regan,
Nicholas D. M. Hine,
Peter B. Littlewood,
Gabriel Kotliar,
Mike C. Payne
Abstract:
We propose a mechanism for binding of diatomic ligands to heme based on a dynamical orbital selection process. This scenario may be described as bonding determined by local valence fluctuations. We support this model using linear-scaling first-principles calculations, in combination with dynamical mean-field theory, applied to heme, the kernel of the hemoglobin metalloprotein central to human resp…
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We propose a mechanism for binding of diatomic ligands to heme based on a dynamical orbital selection process. This scenario may be described as bonding determined by local valence fluctuations. We support this model using linear-scaling first-principles calculations, in combination with dynamical mean-field theory, applied to heme, the kernel of the hemoglobin metalloprotein central to human respiration. We find that variations in Hund's exchange coupling induce a reduction of the iron 3d density, with a concomitant increase of valence fluctuations. We discuss the comparison between our computed optical absorption spectra and experimental data, our picture accounting for the observation of optical transitions in the infrared regime, and how the Hund's coupling reduces, by a factor of five, the strong imbalance in the binding energies of heme with CO and O_2 ligands.
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Submitted 6 February, 2013; v1 submitted 2 June, 2012;
originally announced June 2012.
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Vanadium dioxide : A Peierls-Mott insulator stable against disorder
Authors:
Cedric Weber,
David D. O'Regan,
Nicholas D. M. Hine,
Mike C. Payne,
Gabriel Kotliar,
Peter B. Littlewood
Abstract:
Vanadium dioxide undergoes a first order metal-insulator transition at 340 K. In this work, we develop and carry out state of the art linear scaling DFT calculations refined with non-local dynamical mean-field theory. We identify a complex mechanism, a Peierls-assisted orbital selection Mott instability, which is responsible for the insulating M$_1$ phase, and furthermore survives a moderate degre…
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Vanadium dioxide undergoes a first order metal-insulator transition at 340 K. In this work, we develop and carry out state of the art linear scaling DFT calculations refined with non-local dynamical mean-field theory. We identify a complex mechanism, a Peierls-assisted orbital selection Mott instability, which is responsible for the insulating M$_1$ phase, and furthermore survives a moderate degree of disorder.
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Submitted 9 July, 2012; v1 submitted 7 February, 2012;
originally announced February 2012.
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Linear-scaling DFT+U with full local orbital optimization
Authors:
David D. O'Regan,
Nicholas D. M. Hine,
Mike C. Payne,
Arash A. Mostofi
Abstract:
We present an approach to the DFT+U method (Density Functional Theory + Hubbard model) within which the computational effort for calculation of ground state energies and forces scales linearly with system size. We employ a formulation of the Hubbard model using nonorthogonal projector functions to define the localized subspaces, and apply it to a local-orbital DFT method including in situ orbital…
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We present an approach to the DFT+U method (Density Functional Theory + Hubbard model) within which the computational effort for calculation of ground state energies and forces scales linearly with system size. We employ a formulation of the Hubbard model using nonorthogonal projector functions to define the localized subspaces, and apply it to a local-orbital DFT method including in situ orbital optimization. The resulting approach thus combines linear-scaling and systematic variational convergence. We demonstrate the scaling of the method by applying it to nickel oxide nano-clusters with sizes exceeding 7,000 atoms.
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Submitted 13 February, 2012; v1 submitted 25 November, 2011;
originally announced November 2011.
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Fermi level pinning can determine polarity in semiconductor nanorods
Authors:
Philip W. Avraam,
Nicholas D. M. Hine,
Paul Tangney,
Peter D. Haynes
Abstract:
First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are strongly influenced by Fermi level pinning. The Fermi level for an isolated nanorod is found to coincide with a significant density of electronic surface states at the end surfaces, which are either mid-gap states or band-edge states. These states pin the Fermi level, and therefore fix the potential…
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First-principles calculations of polar semiconductor nanorods reveal that their dipole moments are strongly influenced by Fermi level pinning. The Fermi level for an isolated nanorod is found to coincide with a significant density of electronic surface states at the end surfaces, which are either mid-gap states or band-edge states. These states pin the Fermi level, and therefore fix the potential difference across the rod. We provide evidence that this effect can have a determining influence on the polarity of nanorods, and has consequences for the way a rod responds to changes in its surface chemistry, the scaling of its dipole moment with its size, and the dependence of polarity on its composition.
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Submitted 23 February, 2012; v1 submitted 30 October, 2011;
originally announced October 2011.
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Calculating optical absorption spectra for large systems using linear-scaling density-functional theory
Authors:
Laura E. Ratcliff,
Nicholas D. M. Hine,
Peter D. Haynes
Abstract:
A new method for calculating optical absorption spectra within linear-scaling density-functional theory (LS-DFT) is presented, incorporating a scheme for optimizing a set of localized orbitals to accurately represent unoccupied Kohn-Sham states. Three different schemes are compared and the most promising of these, based on the use of a projection operator, has been implemented in a fully-functiona…
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A new method for calculating optical absorption spectra within linear-scaling density-functional theory (LS-DFT) is presented, incorporating a scheme for optimizing a set of localized orbitals to accurately represent unoccupied Kohn-Sham states. Three different schemes are compared and the most promising of these, based on the use of a projection operator, has been implemented in a fully-functional LS-DFT code. The method has been applied to the calculation of optical absorption spectra for the metal-free phthalocyanine molecule and the conjugated polymer poly(para-phenylene). Excellent agreement with results from a traditional DFT code is obtained.
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Submitted 11 October, 2011; v1 submitted 15 September, 2011;
originally announced September 2011.
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Electrostatic Interactions in Finite Systems treated with Periodic Boundary Conditions: Application to Linear-Scaling Density Functional Theory
Authors:
N. D. M. Hine,
J. Dziedzic,
P. D. Haynes,
C. K. Skylaris
Abstract:
We present a comparison of methods for treating the electrostatic interactions of finite, isolated systems within periodic boundary conditions (PBCs), within Density Functional Theory (DFT), with particular emphasis on linear-scaling (LS) DFT. Often, PBCs are not physically realistic but are an unavoidable consequence of the choice of basis set and the efficacy of using Fourier transforms to compu…
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We present a comparison of methods for treating the electrostatic interactions of finite, isolated systems within periodic boundary conditions (PBCs), within Density Functional Theory (DFT), with particular emphasis on linear-scaling (LS) DFT. Often, PBCs are not physically realistic but are an unavoidable consequence of the choice of basis set and the efficacy of using Fourier transforms to compute the Hartree potential. In such cases the effects of PBCs on the calculations need to be avoided, so that the results obtained represent the open rather than the periodic boundary. The very large systems encountered in LS-DFT make the demands of the supercell approximation for isolated systems more difficult to manage, and we show cases where the open boundary (infinite cell) result cannot be obtained from extrapolation of calculations from periodic cells of increasing size. We discuss, implement and test three very different approaches for overcoming or circumventing the effects of PBCs: truncation of the Coulomb interaction combined with padding of the simulation cell, approaches based on the minimum image convention, and the explicit use of Open Boundary Conditions (OBCs). We have implemented these approaches in the ONETEP LS-DFT program and applied them to a range of systems, including a polar nanorod and a protein. We compare their accuracy, complexity, and rate of convergence with simulation cell size. We demonstrate that corrective approaches within PBCs can achieve the OBC result more efficiently and accurately than pure OBC approaches.
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Submitted 9 September, 2011;
originally announced September 2011.
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Factors influencing the distribution of charge in polar nanocrystals
Authors:
Philip W. Avraam,
Nicholas D. M. Hine,
Paul Tangney,
Peter D. Haynes
Abstract:
We perform first-principles calculations of wurtzite GaAs nanorods to explore the factors determining charge distributions in polar nanostructures. We show that both the direction and magnitude of the dipole moment $\mathbf{d}$ of a nanorod, and its electic field, depend sensitively on how its surfaces are terminated and do not depend strongly on the spontaneous polarization of the underlying latt…
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We perform first-principles calculations of wurtzite GaAs nanorods to explore the factors determining charge distributions in polar nanostructures. We show that both the direction and magnitude of the dipole moment $\mathbf{d}$ of a nanorod, and its electic field, depend sensitively on how its surfaces are terminated and do not depend strongly on the spontaneous polarization of the underlying lattice. We identify two physical mechanisms by which $\mathbf{d}$ is controlled by the surface termination, and we show that the excess charge on the nanorod ends is not strongly localized. We discuss the implications of these results for tuning nanocrystal properties, and for their growth and assembly.
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Submitted 12 May, 2011;
originally announced May 2011.
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Thickness-dependent magnetic properties of oxygen-deficient EuO
Authors:
M. Barbagallo,
T. Stollenwerk,
J. Kroha,
N. -J. Steinke,
N. D. M. Hine,
J. F. K. Cooper,
C. H. W. Barnes,
A. Ionescu,
P. M. D. S. Monteiro,
J. -Y. Kim,
K. R. A. Ziebeck,
C. J. Kinane,
R. M. Dalgliesh,
T. R. Charlton,
S. Langridge
Abstract:
We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that…
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We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that carry the spins associated with the 4f orbitals of Eu are all contributing factors in the surface-induced change of the magnetic properties of EuO$_{1-x}$.
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Submitted 21 April, 2011;
originally announced April 2011.
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Accurate ionic forces and geometry optimisation in linear scaling density-functional theory with local orbitals
Authors:
N. D. M. Hine,
M. Robinson,
P. D. Haynes,
C. -K. Skylaris,
M. C. Payne,
A. A. Mostofi
Abstract:
Linear scaling methods for density-functional theory (DFT) simulations are formulated in terms of localised orbitals in real-space, rather than the delocalised eigenstates of conventional approaches. In local-orbital methods, relative to conventional DFT, desirable properties can be lost to some extent, such as the translational invariance of the total energy of a system with respect to small disp…
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Linear scaling methods for density-functional theory (DFT) simulations are formulated in terms of localised orbitals in real-space, rather than the delocalised eigenstates of conventional approaches. In local-orbital methods, relative to conventional DFT, desirable properties can be lost to some extent, such as the translational invariance of the total energy of a system with respect to small displacements and the smoothness of the potential energy surface. This has repercussions for calculating accurate ionic forces and geometries. In this work we present results from \textsc{onetep}, our linear scaling method based on localised orbitals in real-space. The use of psinc functions for the underlying basis set and on-the-fly optimisation of the localised orbitals results in smooth potential energy surfaces that are consistent with ionic forces calculated using the Hellmann-Feynman theorem. This enables accurate geometry optimisation to be performed. Results for surface reconstructions in silicon are presented, along with three example systems demonstrating the performance of a quasi-Newton geometry optimisation algorithm: an organic zwitterion, a point defect in an ionic crystal, and a semiconductor nanostructure.
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Submitted 30 March, 2011;
originally announced March 2011.
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Projector self-consistent DFT+U using non-orthogonal generalized Wannier functions
Authors:
David D. O'Regan,
Nicholas D. M. Hine,
Mike C. Payne,
Arash A. Mostofi
Abstract:
We present a formulation of the density-functional theory + Hubbard model (DFT+U) method that is self-consistent over the choice of Hubbard projectors used to define the correlated subspaces. In order to overcome the arbitrariness in this choice, we propose the use of non-orthogonal generalized Wannier functions (NGWFs) as projectors for the DFT+U correction. We iteratively refine these NGWF proje…
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We present a formulation of the density-functional theory + Hubbard model (DFT+U) method that is self-consistent over the choice of Hubbard projectors used to define the correlated subspaces. In order to overcome the arbitrariness in this choice, we propose the use of non-orthogonal generalized Wannier functions (NGWFs) as projectors for the DFT+U correction. We iteratively refine these NGWF projectors and, hence, the DFT+U functional, such that the correlated subspaces are fully self-consistent with the DFT+U ground-state. We discuss the convergence characteristics of this algorithm and compare ground-state properties thus computed with those calculated using hydrogenic projectors. Our approach is implemented within, but not restricted to, a linear-scaling DFT framework, opening the path to DFT+U calculations on systems of unprecedented size.
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Submitted 27 July, 2010; v1 submitted 27 April, 2010;
originally announced April 2010.
