Showing 1–41 of 41 results for author: Island, J

A back-to-back diode model applied to MoS2 van der Waals Schottky diodes

Authors: Jeffrey A. Cloninger, Raine Harris, Kristine L. Haley, Randy M. Sterbentz, Takashi Taniguchi, Kenji Watanabe, Joshua O. Island

Abstract: The use of metal van der Waals contacts and the implicit reduction in Fermi-level pinning in contacted semiconductors has led to remarkable device optimizations. For example, using graphene as an electrical contact allows for tunable Schottky barriers in transistors and barristors. In this study, we present a double Schottky barrier model and apply it to barrier tunable all van der Waals transisto… ▽ More The use of metal van der Waals contacts and the implicit reduction in Fermi-level pinning in contacted semiconductors has led to remarkable device optimizations. For example, using graphene as an electrical contact allows for tunable Schottky barriers in transistors and barristors. In this study, we present a double Schottky barrier model and apply it to barrier tunable all van der Waals transistors. In a molybdenum disulfide (MoS$_2$) transistor with graphene and few-layer graphene contacts, we find that the model can be applied to extract Schottky barrier heights that agree with the Schottky-Mott rule from simple two-terminal current-voltage measurements at room temperature. Furthermore, we show tunability of the Schottky barrier \textit{in-situ} using a regional contact gate. Our results show that a basic back-to-back diode model, applied to two terminal measurements, can capture the diode properties of all-van-der-Waals transistors relatively well. △ Less

Submitted 5 February, 2024; originally announced February 2024.

Comments: 6 pages, 3 figures

Quantum logic control and precision measurements of molecular ions in a ring trap -- a new approach for testing fundamental symmetries

Authors: Yan Zhou, Joshua O. Island, Matt Grau

Abstract: We present a new platform facilitating quantum logic control of polar molecular ions in a segmented ring ion trap, paving the way for precision measurements. This approach focuses on achieving near-unity state preparation and detection, as well as long spin coherence. A distinctive aspect lies in separating state preparation and detection conducted in a static frame, from parity-selective spin-pre… ▽ More We present a new platform facilitating quantum logic control of polar molecular ions in a segmented ring ion trap, paving the way for precision measurements. This approach focuses on achieving near-unity state preparation and detection, as well as long spin coherence. A distinctive aspect lies in separating state preparation and detection conducted in a static frame, from parity-selective spin-precession in a rotating frame. This method can be applied to a wide range of ion species and will be used to search for the electron's electric dipole moment and the nuclear magnetic quadrupole moment. △ Less

Submitted 25 July, 2023; v1 submitted 20 October, 2022; originally announced October 2022.

Comments: 16 pages, 11 figures, 2 table

An automated system for strain engineering and straintronics of 2D materials

Authors: Onur Çakıroğlu, Joshua O. Island, Yong Xie, Riccardo Frisenda, Andres Castellanos-Gomez

Abstract: This work presents an automated three-point bending apparatus that can be used to study strain engineering and straintronics in two-dimensional materials. We benchmark the system by reporting reproducible strain tuned micro-reflectance, Raman, and photoluminescence spectra for monolayer molybdenum disulfide (MoS2). These results are in good agreement with reported literature using conventional ben… ▽ More This work presents an automated three-point bending apparatus that can be used to study strain engineering and straintronics in two-dimensional materials. We benchmark the system by reporting reproducible strain tuned micro-reflectance, Raman, and photoluminescence spectra for monolayer molybdenum disulfide (MoS2). These results are in good agreement with reported literature using conventional bending apparatus. We further utilize the system to automate strain investigations of straintronic devices by measuring the piezoresistive effect and the strain effect on photoresponse in an MoS2 electrical device. The details of the construction of the straightforward system are given and we anticipate it can be easily implemented for study of strain engineering and straintronics in a wide variety of 2D material systems. △ Less

Submitted 17 October, 2022; originally announced October 2022.

Universal image segmentation for optical identification of 2D materials

Authors: Randy M. Sterbentz, Kristine L. Haley, Joshua O. Island

Abstract: Machine learning methods are changing the way data is analyzed. One of the most powerful and widespread applications of these techniques is in image segmentation wherein disparate objects of a digital image are partitioned and classified. Here we present an image segmentation program incorporating a series of unsupervised clustering algorithms for the automatic thickness identification of two-dime… ▽ More Machine learning methods are changing the way data is analyzed. One of the most powerful and widespread applications of these techniques is in image segmentation wherein disparate objects of a digital image are partitioned and classified. Here we present an image segmentation program incorporating a series of unsupervised clustering algorithms for the automatic thickness identification of two-dimensional materials from digital optical microscopy images. The program identifies mono- and few-layer flakes of a variety of materials on both opaque and transparent substrates with a pixel accuracy of roughly 95%. Contrasting with previous attempts, application generality is achieved through preservation and analysis of all three digital color channels and Gaussian mixture model fits to arbitrarily shaped data clusters. Our results provide a facile implementation of data clustering for the universal, automatic identification of two-dimensional materials exfoliated onto any substrate. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Comments: 11 pages, 5 figures

Journal ref: Scientific Reports 11, 5808 (2021)

Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3 Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions

Authors: K. K. Mishra, T. R. Ravindran, Joshua O. Island, Eduardo Flores, Jose Ramon Ares, Carlos Sanchez, Isabel J. Ferrer, Herre S. J. van der Zant, Amit Pawbake, R. Kanawade, Andres Castellanos-Gomez, Dattatray J. Late

Abstract: Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the pressure dependence of out-of plane Ag Raman modes in high quality few-layers titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method… ▽ More Two-dimensional layered trichalcogenide materials have recently attracted the attention of the scientific community because of its robust mechanical, thermal properties and applications in opto and nanoelectronics devices. We report the pressure dependence of out-of plane Ag Raman modes in high quality few-layers titanium trisulfide (TiS3) nanoribbons grown using a direct solid-gas reaction method and infer their cross-plane thermal expansion coefficient.Both mechanical stability and thermal properties of the TiS3 nanoribbons are elucidated using phonon-spectrum analyses. Raman spectroscopic studies at high pressure (up to 34 GPa) using a diamond anvil cell identify four prominent Ag Raman bands; a band at 557 cm-1 softens under compression, and others at 175, 300, and 370 cm-1 show normal hardening. Anomalies in phonon mode frequencies and excessive broadening in line-width of the soft phonon about ~ 13 GPa are attributed to the possible onset of a reversible structural transition. A complete structural phase transition at 43 GPa is inferred from Ag soft mode frequency (557 cm-1) versus pressure extrapolation curve, consistent with recent reported theoretical predictions. Using the experimental mode Grüneisen parameters i of Raman modes, the cross-plane thermal expansion coefficient Cv of the TiS3 nanoribbons at ambient phase is estimated to be1.32110-6K-1. The observed results are expected to be useful in calibration and performance of next generation nano-electronics and optical devices under extreme stress conditions. △ Less

Submitted 25 November, 2020; originally announced November 2020.

On-chip terahertz modulation and emission with integrated graphene junctions

Authors: Joshua O. Island, Peter Kissin, Jacob Schalch, Xiaomeng Cui, Sheikh Rubaiat Ul Haque, Alex Potts, Takashi Taniguchi, Kenji Watanabe, Richard D. Averitt, Andrea F. Young

Abstract: The efficient modulation and control of ultrafast signals on-chip is of central importance in terahertz (THz) communications and a promising route toward sub-diffraction limit THz spectroscopy. Two-dimensional (2D) materials may provide a platform for these endeavors. We explore this potential, integrating high-quality graphene p-n junctions within two types of planar transmission line circuits to… ▽ More The efficient modulation and control of ultrafast signals on-chip is of central importance in terahertz (THz) communications and a promising route toward sub-diffraction limit THz spectroscopy. Two-dimensional (2D) materials may provide a platform for these endeavors. We explore this potential, integrating high-quality graphene p-n junctions within two types of planar transmission line circuits to modulate and emit picosecond pulses. In a coplanar stripline geometry, we demonstrate electrical modulation of THz signal transmission by 95%. In a Goubau waveguide geometry, we achieve complete gate-tunable control over THz emission from a photoexcited graphene junction. These studies inform the development of on-chip signal manipulation and highlight prospects for 2D materials in THz applications. △ Less

Submitted 4 April, 2020; originally announced April 2020.

Comments: 11 pages, 9 figures, including supplementary materials

Journal ref: Appl. Phys. Lett. 116, 161104 (2020)

Linear magneto-electric phase in ultrathin MnPS$_{3}$ probed by optical second harmonic generation

Authors: H. Chu, C. J. Roh, J. O. Island, C. Li, S. Lee, J. Chen, J. G. Park, A. F. Young, J. S. Lee, D. Hsieh

Abstract: The transition metal thiophosphates $M$PS$_3$ ($M$ = Mn, Fe, Ni) are a class of van der Waals stacked insulating antiferromagnets that can be exfoliated down to the ultrathin limit. MnPS$_3$ is particularly interesting because its N$\acute{\textrm{e}}$el ordered state breaks both spatial-inversion and time-reversal symmetries, allowing for a linear magneto-electric phase that is rare among van der… ▽ More The transition metal thiophosphates $M$PS$_3$ ($M$ = Mn, Fe, Ni) are a class of van der Waals stacked insulating antiferromagnets that can be exfoliated down to the ultrathin limit. MnPS$_3$ is particularly interesting because its N$\acute{\textrm{e}}$el ordered state breaks both spatial-inversion and time-reversal symmetries, allowing for a linear magneto-electric phase that is rare among van der Waals materials. However, it is unknown whether this unique magnetic structure of bulk MnPS$_3$ remains stable in the ultrathin limit. Using optical second harmonic generation rotational anisotropy, we show that long-range linear magneto-electric type N$\acute{\textrm{e}}$el order in MnPS$_3$ persists down to at least 5.3 nm thickness. However an unusual mirror symmetry breaking develops in ultrathin samples on SiO$_2$ substrates that is absent in bulk materials, which is likely related to substrate induced strain. △ Less

Submitted 20 January, 2020; originally announced January 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 124, 027601 (2020)

Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect

Authors: J. O. Island, X. Cui, C. Lewandowski, J. Y. Khoo, E. M. Spanton, H. Zhou, D. Rhodes, J. C. Hone, T. Taniguchi, K. Watanabe, L. S. Levitov, M. P. Zaletel, A. F. Young

Abstract: Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter. Famously, SOC was predicted by Kane and Mele to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene has precluded experimental observation. Here, we exploit a layer-selective proximity effect---achieved via van der Waals contact to a semiconducting tran… ▽ More Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter. Famously, SOC was predicted by Kane and Mele to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer graphene has precluded experimental observation. Here, we exploit a layer-selective proximity effect---achieved via van der Waals contact to a semiconducting transition metal dichalcogenide--to engineer Kane-Mele SOC in ultra-clean \textit{bilayer} graphene. Using high-resolution capacitance measurements to probe the bulk electronic compressibility, we find that SOC leads to the formation of a distinct incompressible, gapped phase at charge neutrality. The experimental data agrees quantitatively with a simple theoretical model in which the new phase results from SOC-driven band inversion. In contrast to Kane-Mele SOC in monolayer graphene, the inverted phase is not expected to be a time reversal invariant topological insulator, despite being separated from conventional band insulators by electric field tuned phase transitions where crystal symmetry mandates that the bulk gap must close. Electrical transport measurements, conspicuously, reveal that the inverted phase has a conductivity $\sim e^2/h$, which is suppressed by exceptionally small in-plane magnetic fields. The high conductivity and anomalous magnetoresistance are consistent with theoretical models that predict helical edge states within the inversted phase, that are protected from backscattering by an emergent spin symmetry that remains robust even for large Rashba SOC. Our results pave the way for proximity engineering of strong topological insulators as well as correlated quantum phases in the strong spin-orbit regime in graphene heterostructures. △ Less

Submitted 8 January, 2019; v1 submitted 4 January, 2019; originally announced January 2019.

Comments: 7 pages of main text + 13 pages supplementary material and figures. More information available at http://www.afylab.com/publications/

Investigating laser induced phase engineering in MoS2 transistors

Authors: Nikos Papadopoulos, Joshua O. Island, Herre S. J. van der Zant, Gary A. Steele

Abstract: Phase engineering of MoS2 transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2 flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2 transistors by simple light exposure. Nevertheless, the fabrication and demonstration o… ▽ More Phase engineering of MoS2 transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2 flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2 transistors by simple light exposure. Nevertheless, the fabrication and demonstration of laser patterned MoS2 devices starting from the metallic polymorph has not been demonstrated yet. Here, we study the effects of laser radiation on 1T/1T'-MoS2 transistors with the prospect of driving an in-situ phase transition to the 2H-polymorph through light exposure. We find that although the Raman peaks of 2H-MoS2 become more prominent and the ones from the 1T/1T' phase fade after the laser exposure, the semiconducting properties of the laser patterned devices are not fully restored and the laser treatment ultimately leads to degradation of the transport channel. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Journal ref: IEEE Transactions on Electron Devices, pp. 1-6, 2018

Interaction-driven giant orbital magnetic moments in carbon nanotubes

Authors: Joshua O. Island, Marvin Ostermann, Lee Aspitarte, Ethan D. Minot, Daniele Varsano, Elisa Molinari, Massimo Rontani, Gary A. Steele

Abstract: Carbon nanotubes continue to be model systems for studies of confinement and interactions. This is particularly true in the case of so-called "ultra-clean" carbon nanotube devices offering the study of quantum dots with extremely low disorder. The quality of such systems, however, has increasingly revealed glaring discrepancies between experiment and theory. Here we address the outstanding anomaly… ▽ More Carbon nanotubes continue to be model systems for studies of confinement and interactions. This is particularly true in the case of so-called "ultra-clean" carbon nanotube devices offering the study of quantum dots with extremely low disorder. The quality of such systems, however, has increasingly revealed glaring discrepancies between experiment and theory. Here we address the outstanding anomaly of exceptionally large orbital magnetic moments in carbon nanotube quantum dots. We perform low temperature magneto-transport measurements of the orbital magnetic moment and find it is up to seven times larger than expected from the conventional semiclassical model. Moreover, the magnitude of the magnetic moment monotonically drops with the addition of each electron to the quantum dot directly contradicting the widely accepted shell filling picture of single-particle levels. We carry out quasiparticle calculations, both from first principles and within the effective-mass approximation, and find the giant magnetic moments can only be captured by considering a self-energy correction to the electronic band structure due to electron-electron interactions. △ Less

Submitted 21 September, 2018; originally announced September 2018.

Comments: 15 pages and 10 figures including supplemental materials

Journal ref: Phys. Rev. Lett. 121, 127704 (2018)

Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing

Authors: Riccardo Frisenda, Joshua O. Island, Jose L. Lado, Emerson Giovanelli, Patricia Gant, Philipp Nagler, Sebastian Bange, John M. Lupton, Christian Schüller, Aday Molina-Mendoza, Lucia Aballe, Michael Foerster, Tobias Korn, Miguel Angel Niño, David Perez de Lara, Emilio M. Pérez, Joaquín Fernandéz-Rossier, Andres Castellanos-Gomez

Abstract: Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum,… ▽ More Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonstrate an easy way to synthesize ultrathin, highly crystalline flakes of PbI2 by precipitation from a solution in water. We thoroughly characterize the produced thin flakes with different techniques ranging from optical and Raman spectros-copy to temperature-dependent photoluminescence and electron microscopy. We compare the results to ab initio calculations of the band structure of the material. Finally, we fabricate photodetectors based on PbI2 and study their optoelectronic properties. △ Less

Submitted 10 October, 2017; originally announced October 2017.

Comments: main text 20 pages + 10 figures, supporting information 16 pages + 17 figures

High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors

Authors: Aday J. Molina-Mendoza, Joshua O. Island, Wendel S. Paz, Jose Manuel Clamagirand, Jose Ramón Ares, Eduardo Flores, Fabrice Leardini, Carlos Sánchez, Nicolás Agraït, Gabino Rubio-Bollinger, Herre S. J. van der Zant, Isabel J. Ferrer, J. J. Palacios, Andres Castellanos-Gomez

Abstract: The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titani… ▽ More The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the electrical breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices. △ Less

Submitted 18 April, 2017; originally announced April 2017.

Comments: 24 pages, 9 figures main text, 4 figures supporting information

Journal ref: Adv. Funct. Mater. (2017), 27(13), 1605647

On the origin of critical temperature enhancement in atomically-thin superconductors

Authors: Evgeny Talantsev, Wayne Crump, Joshua Island, Ying Xing, Yi Sun, Jian Wang, Jeffery Tallon

Abstract: Recent experiments showed that thinning gallium, iron selenide and 2H tantalum disulfide to single/several monoatomic layer(s) enhances their superconducting critical temperatures. Here, we characterize these superconductors by extracting the absolute values of the London penetration depth, the superconducting energy gap, and the relative jump in specific heat at the transition temperature from th… ▽ More Recent experiments showed that thinning gallium, iron selenide and 2H tantalum disulfide to single/several monoatomic layer(s) enhances their superconducting critical temperatures. Here, we characterize these superconductors by extracting the absolute values of the London penetration depth, the superconducting energy gap, and the relative jump in specific heat at the transition temperature from their self-field critical currents. Our central finding is that the enhancement in transition temperature for these materials arises from the opening of an additional superconducting gap, while retaining a largely unchanged bulk superconducting gap. Literature data reveals that ultrathin niobium films similarly develop a second superconducting gap. Based on the available data, it seems that, for type-II superconductors, a new superconducting band appears when the film thickness becomes smaller than the out-of-plane coherence length. The same mechanism may also be the cause of enhanced interface superconductivity. △ Less

Submitted 28 March, 2017; originally announced March 2017.

Comments: 43 pages, 12 figures

Journal ref: 2D Materials, 2017

Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides

Authors: Joshua O. Island, Aday J. Molina-Mendoza, Mariam Barawi, Robert Biele, Eduardo Flores, Jose M. Clamagirand, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we r… ▽ More The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV- 2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3). △ Less

Submitted 30 April, 2017; v1 submitted 6 February, 2017; originally announced February 2017.

Comments: Topical review of the properties and applications of the transition metal trichalcogenides (TMTCs)

Journal ref: 2D Materials, 4 0220033 (2017)

Giant modulation of the electronic band gap of carbon nanotubes by dielectric screening

Authors: Lee Aspitarte, Daniel R. McCulley, Andrea Bertoni, Joshua O. Island, Marvin Ostermann, Massimo Rontani, Gary A. Steele, Ethan D. Minot

Abstract: Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be strongly driven by electron-electron (e-e) interactions and correlations, even at room temperature. Here, we use dielectric liquids to screen e-e interactions in indiv… ▽ More Carbon nanotubes (CNTs) are a promising material for high-performance electronics beyond silicon. But unlike silicon, the nature of the transport band gap in CNTs is not fully understood. The transport gap in CNTs is predicted to be strongly driven by electron-electron (e-e) interactions and correlations, even at room temperature. Here, we use dielectric liquids to screen e-e interactions in individual suspended ultra-clean CNTs. Using multiple techniques, the transport gap is measured as dielectric screening is increased. Changing the dielectric environment from air to isopropanol, we observe a 25% reduction in the transport gap of semiconducting CNTs, and a 32% reduction in the band gap of narrow-gap CNTs. Additional measurements are reported in dielectric oils. Our results elucidate the nature of the transport gap in CNTs, and show that dielectric environment offers a mechanism for significant control over the transport band gap. △ Less

Submitted 3 May, 2017; v1 submitted 27 October, 2016; originally announced October 2016.

Comments: Updates in this version: Additional comparison between theory and experiment, including band gap renormalization calculations for narrow gap CNTs compared to wide-gap CNTs

Journal ref: Scientific Reports 7, 8828 (2017)

Proximity-induced Shiba states in a molecular junction

Authors: Joshua O. Island, Rocco Gaudenzi, Joeri de Bruijckere, Enrique Burzuri, Carlos Franco, Marta Mas-Torrent, Concepcio Rovira, Jaume Veciana, Teun M. Klapwijk, Ramon Aguado, Herre S. J. van der Zant

Abstract: Superconductors containing magnetic impurities exhibit intriguing phenomena derived from the competition between Cooper pairing and Kondo screening. At the heart of this competition are the Yu-Shiba-Rusinov (Shiba) states which arise from the pair breaking effects a magnetic impurity has on a superconducting host. Hybrid superconductor-molecular junctions offer unique access to these states but th… ▽ More Superconductors containing magnetic impurities exhibit intriguing phenomena derived from the competition between Cooper pairing and Kondo screening. At the heart of this competition are the Yu-Shiba-Rusinov (Shiba) states which arise from the pair breaking effects a magnetic impurity has on a superconducting host. Hybrid superconductor-molecular junctions offer unique access to these states but the added complexity in fabricating such devices has kept their exploration to a minimum. Here, we report on the successful integration of a model spin 1/2 impurity, in the form of a neutral and stable all organic radical molecule, in proximity-induced superconducting break-junctions. Our measurements reveal excitations which are characteristic of a spin-induced Shiba state due to the radical's unpaired spin strongly coupled to a superconductor. By virtue of a variable molecule-electrode coupling, we access both the singlet and doublet ground states of the hybrid system which give rise to the doublet and singlet Shiba excited states, respectively. Our results show that Shiba states are a robust feature of the interaction between a paramagnetic impurity and a proximity-induced superconductor where the excited state is mediated by correlated electron-hole (Andreev) pairs instead of Cooper pairs. △ Less

Submitted 7 February, 2017; v1 submitted 27 September, 2016; originally announced September 2016.

Comments: 29 pages including supporting information

Journal ref: Phys. Rev. Lett. 118, 117001 (2017)

Franckeite: a naturally occurring van der Waals heterostructure

Authors: Aday J. Molina-Mendoza, Emerson Giovanelli, Wendel S. Paz, Miguel Angel Niño, Joshua O. Island, Charalambos Evangeli, Lucía Aballe, Michael Foerster, Herre S. J. van der Zant, Gabino Rubio-Bollinger, Nicolás Agraït, J. J. Palacios, Emilio M. Pérez, Andres Castellanos-Gomez

Abstract: The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from… ▽ More The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from poor control over the lattice orientations and the presence of unwanted adsorbates between the stacked layers. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors (exploiting its narrow bandgap) and for p-n junctions based on the stacking of MoS2 (n-doped) and franckeite (p-doped) △ Less

Submitted 21 June, 2016; originally announced June 2016.

Comments: 5 Figures (main text) + 19 Supp. Info. Figures

Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

Authors: Joshua O. Island, Gary A. Steele, Herre S. J. van der Zant, Andres Castellanos-Gomez

Abstract: We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2) - molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical current… ▽ More We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2) - molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 uA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe. We anticipate that this device architecture could be easily extended to other 2D materials. △ Less

Submitted 1 July, 2016; v1 submitted 23 April, 2016; originally announced April 2016.

Comments: 18 pages, 6 figures including Supporting Information

Journal ref: 2D Materials 3, 031002 (2016)

Enhanced superconductivity in atomically thin TaS2

Authors: Efrén Navarro-Moratalla, Joshua O. Island, Samuel Mañas-Valero, Elena Pinilla-Cienfuegos, Andres Castellanos-Gomez, Jorge Quereda, Gabino Rubio-Bollinger, Luca Chirolli, Jose Angel Silva-Guillén, Nicolás Agraït, Gary A. Steele, Francisco Guinea, Herre S. J. van der Zant, Eugenio Coronado

Abstract: The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of diff… ▽ More The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far. △ Less

Submitted 20 April, 2016; v1 submitted 19 April, 2016; originally announced April 2016.

Comments: 54 pages

Journal ref: Nature Communications, 7, 11043 (2016)

Spatial conductivity mapping of unprotected and capped black phosphorus using microwave microscopy

Authors: Pieter J. de Visser, Rebekah Chua, Joshua O. Island, Matvey Finkel, Allard J. Katan, Holger Thierschmann, Herre S. J. van der Zant, Teun M. Klapwijk

Abstract: Thin layers of black phosphorus present an ideal combination of a 2D material with a tunable direct bandgap and high carrier mobility. However the material suffers from degradation in ambient conditions due to an oxidation reaction which involves water, oxygen and light. We have measured the spatial profile of the conductivity on flakes of black phosphorus as a function of time using scanning micr… ▽ More Thin layers of black phosphorus present an ideal combination of a 2D material with a tunable direct bandgap and high carrier mobility. However the material suffers from degradation in ambient conditions due to an oxidation reaction which involves water, oxygen and light. We have measured the spatial profile of the conductivity on flakes of black phosphorus as a function of time using scanning microwave impedance microscopy. A microwave excitation (3 GHz) allows to image a conducting sample even when covered with a dielectric layer. We observe that on bare black phosphorus, the conductivity changes drastically over the whole surface within a day. We demonstrate that the degradation process is slowed down considerably by covering the material with a 10 nm layer of hafnium oxide. It is stable for more than a week, opening up a route towards stable black phosphorus devices in which the high dielectric constant of hafnium oxide can be exploited. Covering black phosphorus with a 15 nm boron nitride flake changes the degradation process qualitatively, it is dominated by the edges of the flake indicating a diffusive process and happens on the scale of days. △ Less

Submitted 8 March, 2016; originally announced March 2016.

Comments: Accepted for publication in 2D Materials

Journal ref: 2D Materials 3, 021002 (2016)

Sequential electron transport and vibrational excitations in an organic molecule coupled to few-kayer graphene electrodes

Authors: E. Burzurí, J. O. Island, R. Diaz-Torres, A. Fursina, A. Gonzalez-Campo, O. Roubeau, S. J. Teat, N. Aliaga-Alcalde, E. Ruiz, H. S. J. van der Zant

Abstract: Graphene electrodes are promising candidates to improve reproducibility and stability in molecular electronics through new electrode-molecule anchoring strategies. Here we report sequential electron transport in few-layer graphene transistors containing individual curcuminoid-based molecules anchored to the electrodes via pi-pi orbital bonding. We show the coexistence of inelastic co-tunneling exc… ▽ More Graphene electrodes are promising candidates to improve reproducibility and stability in molecular electronics through new electrode-molecule anchoring strategies. Here we report sequential electron transport in few-layer graphene transistors containing individual curcuminoid-based molecules anchored to the electrodes via pi-pi orbital bonding. We show the coexistence of inelastic co-tunneling excitations with single-electron transport physics owing to an intermediate molecule-electrode coupling; we argue that an intermediate electron-phonon coupling is the origin of these vibrational-assisted excitations. These experimental observations are complemented with density functional theory calculations to model electron transport and the interaction between electrons and vibrational modes of the curcuminoid molecule. We find that the calculated vibrational modes of the molecule are in agreement with the experimentally observed excitations. △ Less

Submitted 4 February, 2016; originally announced February 2016.

Gate-tunable diode and photovoltaic effect in an organic-2D layered material p-n junction

Authors: Saül Vélez, David Ciudad, Joshua Island, Michele Buscema, Oihana Txoperena, Subir Parui, Gary A. Steele, Fèlix Casanova, Herre S. J. van der Zant, Andres Castellanos-Gomez, Luis E. Hueso

Abstract: The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, here we present an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both g… ▽ More The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for producing gate-tunable p-n junctions. In that context, here we present an organic (Cu-phthalocyanine)-2D layered material (MoS2) hybrid p-n junction with both gate-tunable diode characteristics and photovoltaic effect. Our proof-of-principle devices show multifunctional properties with diode rectifying factors of up to 10^4, while under light exposure they exhibit photoresponse with a measured external quantum efficiency of ~ 11 %. As for their photovoltaic properties, we found open circuit voltages of up to 0.6 V and optical-to-electrical power conversion efficiency of 0.7 %. The extended catalogue of known organic semiconductors and two-dimensional materials offer the prospect for tailoring the properties and the performance of the resulting devices, making organic-2D p-n junctions promising candidates for future technological applications. △ Less

Submitted 14 December, 2015; originally announced December 2015.

Comments: 32 pages

Journal ref: Nanoscale, 2015, 7, 15442-15449

Centimeter-scale synthesis of ultrathin layered MoO3 by van der Waals epitaxy

Authors: Aday J. Molina-Mendoza, Jose Luis Lado, Joshua Island, Miguel Angel Niño, Lucía Aballe, Michael Foerster, Flavio Y. Bruno, Alejandro López-Moreno, Luis Vaquero-Garzon, Herre S. J. van der Zant, Gabino Rubio-Bollinger, Nicolas Agraït, Emilio Perez, Joaquin Fernandez-Rossier, Andres Castellanos-Gomez

Abstract: We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbit… ▽ More We report on the large-scale synthesis of highly oriented ultrathin MoO3 layers using a simple and low-cost atmospheric pressure by van der Waals epitaxy growth on muscovite mica substrates. By this method we are able to synthetize high quality centimeter-scale MoO3 crystals with thicknesses ranging from 1.4 nm (two layers) up to a few nanometers. The crystals can be easily transferred to an arbitrary substrate (such as SiO2) by a deterministic transfer method and extensively characterized to demonstrate the high quality of the resulting crystal. We also study the electronic band structure of the material by density functional theory calculations. Interestingly, the calculations demonstrate that bulk MoO3 has a rather weak electronic interlayer interaction and thus it presents a monolayer-like band structure. Finally, we demonstrate the potential of this synthesis method for optoelectronic applications by fabricating large-area field-effect devices (10 micrometers by 110 micrometers in lateral dimensions), finding responsivities of 30 mA/W for a laser power density of 13 mW/cm2 in the UV region of the spectrum and also as an electron acceptor in a MoS2-based field-effect transistor. △ Less

Submitted 20 June, 2016; v1 submitted 14 December, 2015; originally announced December 2015.

Comments: Main text (11 figures) and supporting information (11 figures)

Journal ref: Chemistry of Materials, 2016, 28 (11), pp 4042

Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors

Authors: Joshua O. Island, Sofya I. Blanter, Michele Buscema, Herre S. J. van der Zant, Andres Castellanos-Gomez

Abstract: Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices often yield to slower, high gain processes which cannot be turned off. Here we report on photodetectors incorporating the layered material In2Se3, which allow co… ▽ More Photocurrent in photodetectors incorporating van der Waals materials is typically produced by a combination of photocurrent generation mechanisms that occur simultaneously during operation. Because of this, response times in these devices often yield to slower, high gain processes which cannot be turned off. Here we report on photodetectors incorporating the layered material In2Se3, which allow complete modulation of a high gain, photogating mechanism in the ON state in favor of fast photoconduction in the OFF state. While photoconduction is largely gate independent, photocurrent from the photogating effect is strongly modulated through application of a back gate voltage. By varying the back gate, we demonstrate control over the dominant mechanism responsible for photocurrent generation. Furthermore, due to the strong photogating effect, these direct-band gap, multi-layer phototransistors produce ultra-high gains of (9.8 +- 2.5) x 10^4 A/W and inferred detectivities of (3.3 +- 0.8) x 10^13 Jones, putting In2Se3 amongst the most sensitive 2D materials for photodetection studied to date. △ Less

Submitted 9 December, 2015; originally announced December 2015.

Comments: 23 pages, 11 figures, 1 table, including Supporting Information (8 pages, 7 figures)

Journal ref: Nano Letters, 2015, 15 (12), pp 7853 - 7858

Precise and reversible band gap tuning in single-layer MoSe2 by uniaxial strain

Authors: Joshua O. Island, Agnieszka Kuc, Erik H. Diependaal, Rudolf Bratschitsch, Herre S. J. van der Zant, Thomas Heine, Andres Castellanos-Gomez

Abstract: We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap of single layer MoSe2 can be reversibly tuned by -27… ▽ More We present photoluminescence (PL) spectroscopy measurements of single-layer MoSe2 as a function of uniform uniaxial strain. A simple clamping and bending method is described that allows for application of uniaxial strain to layered, 2D materials with strains up to 1.1% without slippage. Using this technique, we find that the electronic band gap of single layer MoSe2 can be reversibly tuned by -27 +- 2 meV per percent of strain. This is in agreement with our density-functional theory calculations, which estimate a modulation of -32 meV per percent of strain, taking into account the role of deformation of the underlying substrate upon bending. Finally, due to its narrow PL spectra as compared with that of MoS2, we show that MoSe2 provides a more precise determination of small changes in strain making it the ideal 2D material for strain applications. △ Less

Submitted 30 November, 2015; originally announced November 2015.

Comments: 14 pages, 6 figures including Supporting Information (2 pages, 3 figures)

Journal ref: Nanoscale 8, 2589-2593 (2016)

Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties

Authors: Joshua O. Island, Robert Biele, Mariam Barawi, Jose M. Clamagirand, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Isabel J. Ferrer, Roberto D'Agosta, Andres Castellanos-Gomez

Abstract: We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we de… ▽ More We present characterizations of few-layer titanium trisulfide (TiS3) flakes which, due to their reduced in-plane structural symmetry, display strong anisotropy in their electrical and optical properties. Exfoliated few-layer flakes show marked anisotropy of their in-plane mobilities reaching ratios as high as 7.6 at low temperatures. Based on the preferential growth axis of TiS3 nanoribbons, we develop a simple method to identify the in-plane crystalline axes of exfoliated few-layer flakes through angle resolved polarization Raman spectroscopy. Optical transmission measurements show that TiS3 flakes display strong linear dichroism with a magnitude (transmission ratios up to 30) much greater than that observed for other anisotropic two-dimensional (2D) materials. Finally, we calculate the absorption and transmittance spectra of TiS3 in the random-phase-approximation (RPA) and find that the calculations are in good agreement with the observed experimental optical transmittance. △ Less

Submitted 16 April, 2016; v1 submitted 23 October, 2015; originally announced October 2015.

Comments: 18 pages, 4 figures, including Supporting Information (6 pages, 6 figures)

Journal ref: Scientific Reports 6, 22214 (2016)

Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets

Authors: Amit S. Pawbake, Joshua O. Island, Eduardo Flores, Jose Ramon Ares, Carlos Sanchez, Isabel J. Ferrer, Sandesh R. Jadkar, Herre S. J. van der Zant, Andres Castellanos-Gomez, Dattatray J. Late

Abstract: Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobili… ▽ More Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted carrier mobility up to 10000 cm2V-1 s-1. However, a study of the vibrational properties of TiS3, relevant to understanding the electron-phonon interaction which can be the main mechanism limiting the charge carrier mobility, is still lacking. In this work, we take the first steps to study the vibrational properties of TiS3 through temperature dependent Raman spectroscopy measurements of TiS3 nanoribbons and nanosheets. Our investigation shows that all the Raman modes linearly soften (red shift) as the temperature increases from 88 K to 570 K, due to the anharmonic vibrations of the lattice which also includes contributions from the lattice thermal expansion. This softening with the temperature of the TiS3 modes is more pronounced than that observed in other 2D semiconductors such as MoS2, MoSe2, WSe2 or black phosphorus (BP). This marked temperature dependence of the Raman could be exploited to determine the temperature of TiS3 nanodevices by using Raman spectroscopy as a non-invasive and local thermal probe. Interestingly, the TiS3 nanosheets show a stronger temperature dependence of the Raman modes than the nanoribbons, which we attribute to a lower interlayer coupling in the nanosheets. △ Less

Submitted 19 October, 2015; originally announced October 2015.

Comments: 19 pages, 6 figures, 1 table

Superconducting molybdenum-rhenium electrodes for single-molecule transport studies

Authors: R. Gaudenzi, J. O. Island, J. de Bruijckere, E. Burzuri, T. M. Klapwijk, H. S. J. van der Zant

Abstract: We demonstrate that electronic transport through single molecules or molecular ensembles, commonly based on gold (Au) electrodes, can be extended to superconducting electrodes by combining gold with molybdenum-rhenium (MoRe). This combination induces proximity-effect superconductivity in the gold to temperatures of at least 4.6 Kelvin and magnetic fields of 6 Tesla, improving on previously reporte… ▽ More We demonstrate that electronic transport through single molecules or molecular ensembles, commonly based on gold (Au) electrodes, can be extended to superconducting electrodes by combining gold with molybdenum-rhenium (MoRe). This combination induces proximity-effect superconductivity in the gold to temperatures of at least 4.6 Kelvin and magnetic fields of 6 Tesla, improving on previously reported aluminum based superconducting nanojunctions. As a proof of concept, we show three-terminal superconductive transport measurements through an individual Fe$_4$ single-molecule magnet. △ Less

Submitted 22 July, 2015; originally announced July 2015.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 106, 222602 (2015)

Photocurrent generation with two-dimensional van der Waals semiconductors

Authors: Michele Buscema, Joshua O. Island, Dirk J. Groenendijk, Sofya I. Blanter, Gary A. Steele, Herre S. J. van der Zant, Andres Castellanos-Gomez

Abstract: Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D… ▽ More Two-dimensional (2D) materials have attracted a great deal of interest in recent years. This family of materials allows for the realization of versatile electronic devices and holds promise for next-generation (opto)electronics. Their electronic properties strongly depend on the number of layers, making them interesting from a fundamental standpoint. For electronic applications, semiconducting 2D materials benefit from sizable mobilities and large on/off ratios, due to the large modulation achievable via the gate field-effect. Moreover, being mechanically strong and flexible, these materials can withstand large strain (>10\%) before rupture, making them interesting for strain engineering and flexible devices. Even in their single layer form, semiconducting 2D materials have demonstrated efficient light absorption, enabling large responsivity in photodetectors. Therefore, semiconducting layered 2D materials are strong candidates for optoelectronic applications, especially for photodetection. Here, we review the state-of-the-art in photodetectors based on semiconducting 2D materials, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures. △ Less

Submitted 1 June, 2015; originally announced June 2015.

Comments: 16 Figures, 6 Tables

Journal ref: Chemical Society Reviews, 2015, 44, 3691 - 3718

TiS3 transistors with tailored morphology and electrical properties

Authors: Joshua O. Island, Mariam Barawi, Robert Biele, Adrian Almazan, Jose M. Clamagirand, Jose R. Ares, Carlos Sanchez, Herre S. J. van der Zant, Jose V. Alvarez, Roberto D'Agosta, Isabel J. Ferrer, Andres Castellanos-Gomez

Abstract: Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations,… ▽ More Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping. △ Less

Submitted 20 March, 2015; originally announced March 2015.

Comments: 28 pages, 4 figures, 1 table. Includes Supporting Information (9 figures, 2 tables)

Journal ref: Advanced Materials (2015)

Pick-up and drop transfer of diamond nanosheets

Authors: V. Seshan, J. O. Island, R. van Leeuwen, W. J. Venstra, B. H. Schneider, S. D. Janssens, K. Haenen, E. J. R. Sudhölter, L. C. P. M. de Smet, H. S. J. van der Zant, G. A. Steele, A. Castellanos-Gomez

Abstract: Nanocrystalline diamond (NCD) is a promising material for electronic and mechanical micro- and nanodevices. Here we introduce a versatile pick-up and drop technique that makes it possible to investigate the electrical, optical and mechanical properties of as-grown NCD films. Using this technique, NCD nanosheets, as thin as 55 nm, can be picked-up from a growth substrate and positioned on another s… ▽ More Nanocrystalline diamond (NCD) is a promising material for electronic and mechanical micro- and nanodevices. Here we introduce a versatile pick-up and drop technique that makes it possible to investigate the electrical, optical and mechanical properties of as-grown NCD films. Using this technique, NCD nanosheets, as thin as 55 nm, can be picked-up from a growth substrate and positioned on another substrate. As a proof of concept, electronic devices and mechanical resonators are fabricated and their properties are characterized. In addition, the versatility of the method is further explored by transferring NCD nanosheets onto an optical fibre, which allows measuring its optical absorption. Finally, we show that NCD nanosheets can also be transferred onto 2D crystals, such as MoS2, to fabricate heterostructures. Pick-up and drop transfer enables the fabrication of a variety of NCD-based devices without requiring lithography or wet processing. △ Less

Submitted 10 March, 2015; originally announced March 2015.

Comments: 15 pages, 6 figures

Journal ref: Nanotechnology 26 (2015) 125706

Tailoring 10 nm Scale Suspended Graphene Junctions and Quantum Dots

Authors: V. Tayari, A. C. McRae, S. Yigen, J. O. Island, J. M. Porter, A. R. Champagne

Abstract: The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging… ▽ More The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials. △ Less

Submitted 5 February, 2015; originally announced February 2015.

Journal ref: Nano Lett. 15, 114 (2015)

Fabrication of hybrid molecular devices using multi-layer graphene break junctions

Authors: Joshua O. Island, Anastasia Holovchenko, Max Koole, Paul F. A. Alkemade, Melita Menelaou, Nuria Aliaga-Alcalde, Enrique Burzuri, Herre S. J. van der Zant

Abstract: We report on the fabrication of hybrid molecular devices employing multilayer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope (HIM) or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted con… ▽ More We report on the fabrication of hybrid molecular devices employing multilayer graphene (MLG) flakes which are patterned with a constriction using a helium ion microscope (HIM) or an oxygen plasma etch. The patterning step allows for the localization of a few-nanometer gap, created by electroburning, that can host single molecules or molecular ensembles. By controlling the width of the sculpted constriction, we regulate the critical power at which the electroburning process begins. We estimate the flake temperature given the critical power and find that at low powers it is possible to electroburn MLG with superconducting contacts in close proximity. Finally, we demonstrate the fabrication of hybrid devices with superconducting contacts and anthracene-functionalized copper curcuminoid molecules. This method is extendable to spintronic devices with ferromagnetic contacts and a first step towards molecular integrated circuits. △ Less

Submitted 29 January, 2015; originally announced January 2015.

Comments: 17 pages, 5 figures

Journal ref: Journal of Physics: Condensed Matter 26, 474205 (2014)

Mechanical manipulation and exfoliation of boron nitride flakes by micro-plowing with an AFM tip

Authors: Joshua O. Island, Gary A. Steele, Herre S. J. can der Zant, Andres Castellanos-Gomez

Abstract: We demonstrate a simple method to manipulate and exfoliate thick hexagonal boron nitride (h-BN) flakes using an atomic force microscope (AFM) cantilever and tip mounted to a micromanipulator stage. Thick flakes of tens to hundreds of nanometers can be thinned down to large area, few-layer and monolayer flakes. We characterize the resulting thinned-down flakes using AFM and Raman spectroscopy. This… ▽ More We demonstrate a simple method to manipulate and exfoliate thick hexagonal boron nitride (h-BN) flakes using an atomic force microscope (AFM) cantilever and tip mounted to a micromanipulator stage. Thick flakes of tens to hundreds of nanometers can be thinned down to large area, few-layer and monolayer flakes. We characterize the resulting thinned-down flakes using AFM and Raman spectroscopy. This technique is extendable to other two dimensional, van der Waals materials. △ Less

Submitted 26 January, 2015; originally announced January 2015.

Comments: 4 figures + 3 supp. info. figures. A supp. info. video is available at https://www.youtube.com/watch?v=bUqlngsWiCY

Environmental instability of few-layer black phosphorus

Authors: Joshua O. Island, Gary A. Steele, Herre S. J. van der Zant, Andres Castellanos-Gomez

Abstract: We study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP). From continuous measurements of flake topography over several days, we observe an increase of over 200% in volume due to the condensation of moisture from air. We find that long term exposure to ambient conditions results in a layer-by-layer etching process of BP flakes. Interestingly, flakes can be… ▽ More We study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP). From continuous measurements of flake topography over several days, we observe an increase of over 200% in volume due to the condensation of moisture from air. We find that long term exposure to ambient conditions results in a layer-by-layer etching process of BP flakes. Interestingly, flakes can be etched down to single layer (phosphorene) thicknesses. BP's strong affinity for water greatly modifies the performance of fabricated field-effect transistors (FETs) measured in ambient conditions. Upon exposure to air, we differentiate between two timescales for doping of BP FET transfer characterisitcs: a short timescale (minutes) in which a shift in the threshold voltage occurs due to physisorbed oxygen and nitrogen, and a long timescale (hours) in which p-type doping occurs from water absorption. Continuous measurements of BP FETs in air reveal eventual degradation and break-down of the channel material after several days due to the layer-by-layer etching process. △ Less

Submitted 29 January, 2015; v1 submitted 9 October, 2014; originally announced October 2014.

Comments: 14 pages, 3 figures

Journal ref: 2D Materials 2, 011002 (2015)

Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

Authors: Joshua O. Island, Michele Buscema, Mariam Barawi, José M. Clamagirand, José R. Ares, Carlos Sánchez, Isabel J. Ferrer, Gary A. Steele, Herre S. J. van der Zant, Andres Castellanos-Gomez

Abstract: Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical characteristics and optoelectronic properties. The measured FET characteristics show mobilities up to 2.6 cm^2/Vs and ON/OFF ratios up to 10^4. Under illumination… ▽ More Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabricate field effect transistors and study their electrical characteristics and optoelectronic properties. The measured FET characteristics show mobilities up to 2.6 cm^2/Vs and ON/OFF ratios up to 10^4. Under illumination, the TiS3 NR-FETs present an ultrahigh photoresponse of 2910 A/W and fast rise/fall times of ~4 ms. In addition, we measure cutoff frequencies (f3dBでしべる) up to 1000 Hzへるつ. The strong combination of ultrahigh sensitivity all along the visible spectrum and fast time response of TiS3 nanoribbon transistors put them among the best nanoscale photodetectors to date. △ Less

Submitted 19 June, 2014; originally announced June 2014.

Comments: 4 Figures + 1 Table. It also includes Supp. Info. (5 Figures + 3 Tables)

Isolation and characterization of few-layer black phosphorus

Authors: Andres Castellanos-Gomez, Leonardo Vicarelli, Elsa Prada, Joshua O. Island, K. L. Narasimha-Acharya, Sofya I. Blanter, Dirk J. Groenendijk, Michele Buscema, Gary A. Steele, J. V. Alvarez, Henny W. Zandbergen, J. J. Palacios, Herre S. J. van der Zant

Abstract: Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin flakes than conventional mechanical exfoliation, has been developed. We present general guidelines to determine the number of layers using optical microscopy, Ra… ▽ More Isolation and characterization of mechanically exfoliated black phosphorus flakes with a thickness down to two single-layers is presented. A modification of the mechanical exfoliation method, which provides higher yield of atomically thin flakes than conventional mechanical exfoliation, has been developed. We present general guidelines to determine the number of layers using optical microscopy, Raman spectroscopy and transmission electron microscopy in a fast and reliable way. Moreover, we demonstrate that the exfoliated flakes are highly crystalline and that they are stable even in free-standing form through Raman spectroscopy and transmission electron microscopy measurements. A strong thickness dependence of the band structure is found by density functional theory calculations. The exciton binding energy, within an effective mass approximation, is also calculated for different number of layers. Our computational results for the optical gap are consistent with preliminary photoluminescence results on thin flakes. Finally, we study the environmental stability of black phosphorus flakes finding that the flakes are very hydrophilic and that long term exposure to air moisture etches black phosphorus away. Nonetheless, we demonstrate that the aging of the flakes is slow enough to allow fabrication of field-effect transistors with strong ambipolar behavior. Density functional theory calculations also give us insight into the water-induced changes of the structural and electronic properties of black phosphorus. △ Less

Submitted 11 July, 2014; v1 submitted 3 March, 2014; originally announced March 2014.

Comments: 11 main figures, 7 supporting figures

Journal ref: 2D Matererials, 2014, 1(2) 025001

Long-range Scanning Tunneling Microscope for the study of nanostructures on insulating substrates

Authors: Aday Molina-Mendoza, José Gabriel Rodrigo, Joshua Island, Enrique Burzuri, Gabino Rubio-Bollinger, Herre S. J. van der Zant, Nicolás Agraït

Abstract: The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecti… ▽ More The Scanning Tunneling Microscope is a powerful tool for studying the electronic properties at the atomic level, however it's relatively small scanning range and the fact that it can only operate on conducting samples prevents its application to study heterogeneous samples consisting on conducting and insulating regions. Here we present a long-range scanning tunneling microscope capable of detecting conducting micro and nanostructures on insulating substrates using a technique based on the capacitance between the tip and the sample and performing STM studies. △ Less

Submitted 23 October, 2013; v1 submitted 20 September, 2013; originally announced September 2013.

Comments: 3 pages, 7 figures

Electronic Thermal Conductivity Measurements in Intrinsic Graphene

Authors: S. Yiğen, V. Tayari, J. O. Island, J. M. Porter, A. R. Champagne

Abstract: The electronic thermal conductivity of graphene and 2D Dirac materials is of fundamental interest and can play an important role in the performance of nano-scale devices. We report the electronic thermal conductivity, $K_{e}$, in suspended graphene in the nearly intrinsic regime over a temperature range of 20 to 300 K. We present a method to extract $K_{e}$ using two-point DC electron transport at… ▽ More The electronic thermal conductivity of graphene and 2D Dirac materials is of fundamental interest and can play an important role in the performance of nano-scale devices. We report the electronic thermal conductivity, $K_{e}$, in suspended graphene in the nearly intrinsic regime over a temperature range of 20 to 300 K. We present a method to extract $K_{e}$ using two-point DC electron transport at low bias voltages, where the electron and lattice temperatures are decoupled. We find $K_e$ ranging from 0.5 to 11 W/m.K over the studied temperature range. The data are consistent with a model in which heat is carried by quasiparticles with the same mean free-path and velocity as graphene's charge carriers. △ Less

Submitted 27 June, 2013; v1 submitted 10 March, 2013; originally announced March 2013.

Comments: Supplemental Online Material available at: http://physics.concordia.ca/faculty/alex/Yigen_Champagne_SM.pdf

Journal ref: Physical Review B 87, 241411(R) (2013)

Few-hundred GHz Carbon Nanotube NEMS

Authors: J. O. Island, V. Tayari, A. C. McRae, A. R. Champagne

Abstract: We study 23 to 30 nm long suspended single-wall carbon nanotube quantum dots and observe both their stretching and bending vibrational modes. We use low-temperature DC electron transport to excite and measure the tubes' bending mode by making use of a positive feedback mechanism between their vibrations and the tunneling electrons. In these nano-electro-mechanical-systems (NEMS), we measure fundam… ▽ More We study 23 to 30 nm long suspended single-wall carbon nanotube quantum dots and observe both their stretching and bending vibrational modes. We use low-temperature DC electron transport to excite and measure the tubes' bending mode by making use of a positive feedback mechanism between their vibrations and the tunneling electrons. In these nano-electro-mechanical-systems (NEMS), we measure fundamental bending frequencies $f_{bend}\approx$ 75 - 280 GHz, and extract quality factors $Q \sim 10^{6}$. The NEMS' frequencies can be tuned by a factor of two with tension induced by mechanical breakjunctions actuated by an electrostatic force, or tension from bent suspended electrodes. △ Less

Submitted 13 August, 2012; originally announced August 2012.

Comments: Published in Nano Letters, 7 pages, 4 figures

Journal ref: Nano Letters 12, 4564-4569 (2012)

Ultra-short suspended single-wall carbon nanotube transistors

Authors: J. O. Island, V. Tayari, S. Yigen, A. C. McRae, A. R. Champagne

Abstract: We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of S… ▽ More We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospect of studying THz oscillators with strong electron-vibron coupling. △ Less

Submitted 15 December, 2011; originally announced December 2011.

Journal ref: Applied Physics Letters 99, 243106 (2011)