Showing 1–50 of 53 results for author: Kamiya, T

Entangling Schrödinger's cat states by seeding a Bell state or swapping the cats

Authors: Daisuke Hoshi, Toshiaki Nagase, Sangil Kwon, Daisuke Iyama, Takahiko Kamiya, Shiori Fujii, Hiroto Mukai, Shahnawaz Ahmed, Anton Frisk Kockum, Shohei Watabe, Fumiki Yoshihara, Jaw-Shen Tsai

Abstract: In quantum information processing, two primary research directions have emerged: one based on discrete variables (DV) and the other on the structure of quantum states in a continuous-variable (CV) space. It is increasingly recognized that integrating these two approaches could unlock new potentials, overcoming the inherent limitations of each. Here, we show that such a DV-CV hybrid approach, appli… ▽ More In quantum information processing, two primary research directions have emerged: one based on discrete variables (DV) and the other on the structure of quantum states in a continuous-variable (CV) space. It is increasingly recognized that integrating these two approaches could unlock new potentials, overcoming the inherent limitations of each. Here, we show that such a DV-CV hybrid approach, applied to superconducting Kerr parametric oscillators (KPOs), enables us to entangle a pair of Schrödinger's cat states by two straightforward methods. The first method involves the entanglement-preserving and deterministic conversion between Bell states in the Fock-state basis (DV encoding) and those in the cat-state basis (CV encoding). This method would allow us to construct quantum networks in the cat-state basis using conventional schemes originally developed for the Fock-state basis. In the second method, the $\sqrt{\textrm{iSWAP}}$ gate operation is implemented between two cat states following the procedure used for Fock-state encoding. This DV-like gate operation on CV encoding not only completes the demonstration of a universal quantum gate set in a KPO system but also enables faster and simpler gate operations compared to previous SWAP gate implementations on bosonic modes. Our work offers a simple yet powerful application of DV-CV hybridization while also highlighting the scalability of this planar KPO system. △ Less

Submitted 25 June, 2024; originally announced June 2024.

A RAG Method for Source Code Inquiry Tailored to Long-Context LLMs

Authors: Toshihiro Kamiya

Abstract: Although the context length limitation of large language models (LLMs) has been mitigated, it still hinders their application to software development tasks. This study proposes a method incorporating execution traces into RAG for inquiries about source code. Small-scale experiments confirm a tendency for the method to contribute to improving LLM response quality. Although the context length limitation of large language models (LLMs) has been mitigated, it still hinders their application to software development tasks. This study proposes a method incorporating execution traces into RAG for inquiries about source code. Small-scale experiments confirm a tendency for the method to contribute to improving LLM response quality. △ Less

Submitted 9 April, 2024; originally announced April 2024.

Comments: 6 pages, 2 columns, English translation of the manuscript originally presented in Japanese at a domestic workshop

MSC Class: 68-04 ACM Class: D.2.3; D.2.5

Discovery of self-assembled Ru/Si heterostructures with unique periodic nanostripe patterns boosting hydrogen evolution

Authors: Weizheng Cai, Xinyi He, Tian-Nan Ye, Xinmeng Hu, Chuanlong Liu, Masato Sasase, Masaaki Kitano, Toshio Kamiya, Hideo Hosono, Jiazhen Wu

Abstract: Two-dimensional (2D) heterostructuring is a versatile methodology for designing nanoarchitecture catalytic systems that allow for reconstruction and modulation of interfaces and electronic structures. However, catalysts with such structures are extremely scarce due to limited synthetic strategies. Here, we report a highly ordered 2D Ru/Si nano-heterostructures (RSHS) by acid etching of the LaRuSi… ▽ More Two-dimensional (2D) heterostructuring is a versatile methodology for designing nanoarchitecture catalytic systems that allow for reconstruction and modulation of interfaces and electronic structures. However, catalysts with such structures are extremely scarce due to limited synthetic strategies. Here, we report a highly ordered 2D Ru/Si nano-heterostructures (RSHS) by acid etching of the LaRuSi electride. RSHS shows a superior electrocatalytic activity for hydrogen evolution with an overpotential of 14 mV at 10 mA/cm2 in alkaline media. Both experimental analysis and first-principles calculations demonstrate that the electronic states of Ru can be tuned by strong interactions of the interfacial Ru-Si, leading to an optimized hydrogen adsorption energy. Moreover, due to the synergistic effect of Ru and Si, the energy barrier of water dissociation is significantly reduced. The unique nanostripe structure with abundant interfaces in RSHS will provide a paradigm for construction of efficient catalysts with tunable electronic states and dual active sites. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Comments: 20 pages, 5 figures

Observation and manipulation of quantum interference in a superconducting Kerr parametric oscillator

Authors: Daisuke Iyama, Takahiko Kamiya, Shiori Fujii, Hiroto Mukai, Yu Zhou, Toshiaki Nagase, Akiyoshi Tomonaga, Rui Wang, Jiao-Jiao Xue, Shohei Watabe, Sangil Kwon, Jaw-Shen Tsai

Abstract: Quantum tunneling is the phenomenon that makes superconducting circuits "quantum". Recently, there has been a renewed interest in using quantum tunneling in phase space of a Kerr parametric oscillator as a resource for quantum information processing. Here, we report a direct observation of quantum interference induced by such tunneling in a planar superconducting circuit through Wigner tomography.… ▽ More Quantum tunneling is the phenomenon that makes superconducting circuits "quantum". Recently, there has been a renewed interest in using quantum tunneling in phase space of a Kerr parametric oscillator as a resource for quantum information processing. Here, we report a direct observation of quantum interference induced by such tunneling in a planar superconducting circuit through Wigner tomography. We experimentally elucidate all essential properties of this quantum interference, such as mapping from Fock states to cat states, a temporal oscillation due to the pump detuning, as well as its characteristic Rabi oscillations and Ramsey fringes. Finally, we perform gate operations as manipulations of the observed quantum interference. Our findings lay the groundwork for further studies on quantum properties of superconducting Kerr parametric oscillators and their use in quantum information technologies. △ Less

Submitted 5 January, 2024; v1 submitted 21 June, 2023; originally announced June 2023.

Journal ref: Nat. Commun. 15, 86 (2024)

Local electronic structure of dilute hydrogen in $βべーた$-Ga$_2$O$_3$ probed by muons

Authors: M. Hiraishi, H. Okabe, A. Koda, R. Kadono, T. Ohsawa, N. Ohashi, K. Ide, T. Kamiya, H. Hosono

Abstract: The local electronic structure of muons (Mu) as dilute pseudo-hydrogen in single-crystalline $βべーた$-Ga$_2$O$_3$ has been studied by the muon spin rotation/relaxation ($μみゅー$SR). High-precision measurements over a long time range of $\sim$25 $μみゅー$s have clearly identified two distinct Mu states: a quasi-static Mu (Mu$_1$) and fast-moving Mu (Mu$_2$). By comparing this result with predictions from the recen… ▽ More The local electronic structure of muons (Mu) as dilute pseudo-hydrogen in single-crystalline $βべーた$-Ga$_2$O$_3$ has been studied by the muon spin rotation/relaxation ($μみゅー$SR). High-precision measurements over a long time range of $\sim$25 $μみゅー$s have clearly identified two distinct Mu states: a quasi-static Mu (Mu$_1$) and fast-moving Mu (Mu$_2$). By comparing this result with predictions from the recently established ambipolarity model, these two states are respectively attributed to the relaxed-excited states associated with the donor ($E^{+/0}$) and acceptor ($E^{-/0}$) levels predicted by density functional theory (DFT) calculations for the interstitial H. Furthermore, the local electronic structure of Mu$_1$ is found to be an OMu-bonded state with three-coordinated oxygen. The structure is almost identical with the thermal equilibrium state of H, and it is found to function as an electron donor. The other Mu$_2$ is considered to be in the hydride state (Mu$^-$) from the ambipolarity model, suggesting that it is in fast diffusion motion through the short-lived neutral state due to the charge exchange reaction with conduction electrons (Mu$^0+e^-\rightleftarrows$Mu$^-$). △ Less

Submitted 4 January, 2023; originally announced January 2023.

Comments: 7 pages, 4 figures, plus Supplemental Material (3 pages, 6 figures)

MSCCD: Grammar Pluggable Clone Detection Based on ANTLR Parser Generation

Authors: Wenqing Zhu, Norihiro Yoshida, Toshihiro Kamiya, Eunjong Choi, Hiroaki Takada

Abstract: For various reasons, programming languages continue to multiply and evolve. It has become necessary to have a multilingual clone detection tool that can easily expand supported programming languages and detect various code clones is needed. However, research on multilingual code clone detection has not received sufficient attention. In this study, we propose MSCCD (Multilingual Syntactic Code Clon… ▽ More For various reasons, programming languages continue to multiply and evolve. It has become necessary to have a multilingual clone detection tool that can easily expand supported programming languages and detect various code clones is needed. However, research on multilingual code clone detection has not received sufficient attention. In this study, we propose MSCCD (Multilingual Syntactic Code Clone Detector), a grammar pluggable code clone detection tool that uses a parser generator to generate a code block extractor for the target language. The extractor then extracts the semantic code blocks from a parse tree. MSCCD can detect Type-3 clones at various granularities. We evaluated MSCCD's language extensibility by applying MSCCD to 20 modern languages. Sixteen languages were perfectly supported, and the remaining four were provided with the same detection capabilities at the expense of execution time. We evaluated MSCCD's recall by using BigCloneEval and conducted a manual experiment to evaluate precision. MSCCD achieved equivalent detection performance equivalent to state-of-the-art tools. △ Less

Submitted 6 April, 2022; v1 submitted 3 April, 2022; originally announced April 2022.

Comments: ICPC2022

Towards Informative Tagging of Code Fragments to Support the Investigation of Code Clones

Authors: Daisuke Nishioka, Toshihiro Kamiya

Abstract: Investigating the code fragments of code clones detected by code clone detection tools is a time-consuming task, especially when a large number of reference source files are available. This paper proposes (i) a method for clustering a clone class, which is detected by code clone detection tools using syntactic similarity, based on topic similarity by considering its code fragments as sequences of… ▽ More Investigating the code fragments of code clones detected by code clone detection tools is a time-consuming task, especially when a large number of reference source files are available. This paper proposes (i) a method for clustering a clone class, which is detected by code clone detection tools using syntactic similarity, based on topic similarity by considering its code fragments as sequences of words and (ii) a method for assigning short tags to clusters of the clustering result. We also report an experiment of applying the proposed method to packages of an open source operating system. △ Less

Submitted 3 October, 2021; originally announced October 2021.

Comments: 7 pages, 15th International Workshop on Software Clones

Photoinduced Transient States of Antiferromagnetic Orderings in La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ and SrFeO${}_{3}$ Thin Films Observed through Time-resolved Resonant Soft X-ray Scattering

Authors: Kohei Yamamoto, Tomoyuki Tsuyama, Suguru Ito, Kou Takubo, Iwao Matsuda, Niko Pontius, Christian Schüßler-Langeheine, Makoto Minohara, Hiroshi Kumigashira, Yuichi Yamasaki, Hironori Nakao, Youichi Murakami, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati

Abstract: The relationship between the magnetic interaction and photoinduced dynamics in antiferromagnetic perovskites is investigated in this study. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ thin films, commensurate spin ordering is accompanied by charge disproportionation, whereas SrFeO${}_{3}$ thin films show incommensurate helical antiferromagnetic spin ordering due to increased ferromagnetic coupling comp… ▽ More The relationship between the magnetic interaction and photoinduced dynamics in antiferromagnetic perovskites is investigated in this study. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ thin films, commensurate spin ordering is accompanied by charge disproportionation, whereas SrFeO${}_{3}$ thin films show incommensurate helical antiferromagnetic spin ordering due to increased ferromagnetic coupling compared to La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$. To understand the photoinduced spin dynamics in these materials, we investigate the spin ordering through time-resolved resonant soft X-ray scattering. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$, ultrafast quenching of the magnetic ordering within 130 fs through a nonthermal process is observed, triggered by charge transfer between the Fe atoms. We compare this to the photoinduced dynamics of the helical magnetic ordering of SrFeO${}_{3}$. We find that the change in the magnetic coupling through optically induced charge transfer can offer an even more efficient channel for spin-order manipulation. △ Less

Submitted 29 March, 2021; originally announced March 2021.

Comments: 7 pages, 5 figures

Hard x-ray photoemission study on strain effect in LaNiO$_3$ thin films

Authors: K. Yamagami, K. Ikeda, A. Hariki, Y. Zhang, A. Yasui, Y. Takagi, Y. Hotta, T. Katase, T. Kamiya, H. Wadati

Abstract: The strain effect from a substrate is an important experimental route to control electronic and magnetic properties in transition-metal oxide (TMO) thin films. Using hard x-ray photoemission spectroscopy, we investigate the strain dependence of the valence states in LaNiO$_{3}$ thin films, strongly correlated perovskite TMO, grown on four substrates: LaAlO$_{3}$, (LaAlO$_{3}$)$_{0.3}$(SrAl… ▽ More The strain effect from a substrate is an important experimental route to control electronic and magnetic properties in transition-metal oxide (TMO) thin films. Using hard x-ray photoemission spectroscopy, we investigate the strain dependence of the valence states in LaNiO$_{3}$ thin films, strongly correlated perovskite TMO, grown on four substrates: LaAlO$_{3}$, (LaAlO$_{3}$)$_{0.3}$(SrAl$_{0.5}$Ta$_{0.5}$O$_{3}$)$_{0.7}$, SrTiO$_{3}$, and DyScO$_{3}$. A Madelung potential analysis of core-level spectra suggests that the point-charge description is valid for the La ions while it breaks down for Ni and O ions due to a strong covalent bonding between the two. A clear x-ray photon-energy dependence of the valence spectra is analyzed by the density functional theory, which points to a presence of the La 5$p$ state near the Fermi level. △ Less

Submitted 16 March, 2021; originally announced March 2021.

Comments: 6 pages, 4 figures, and 2 tables

Journal ref: Appl. Phys. Lett. 118, 161601 (2021)

Crystal structure built from a GeO$_6$-GeO$_5$ polyhedra network with high thermal stability: $βべーた$-SrGe$_2$O$_5$

Authors: Christian A. Niedermeier, Jun-ichi Yamaura, Jiazhen Wu, Xinyi He, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

Abstract: By tackling the challenge of extending transparent oxide semiconductors to Ge based oxides, we have found a not-yet-reported crystal structure, named $βべーた$-SrGe$_2$O$_5$, which is composed of edge-sharing GeO$_6$ octahedra interconnected by GeO$_5$ bipyramids. Single crystals were successfully grown by the high-pressure flux method. $βべーた$-SrGe$_2$O$_5$ has a band gap of 5.2 eV and a dispersive conduct… ▽ More By tackling the challenge of extending transparent oxide semiconductors to Ge based oxides, we have found a not-yet-reported crystal structure, named $βべーた$-SrGe$_2$O$_5$, which is composed of edge-sharing GeO$_6$ octahedra interconnected by GeO$_5$ bipyramids. Single crystals were successfully grown by the high-pressure flux method. $βべーた$-SrGe$_2$O$_5$ has a band gap of 5.2 eV and a dispersive conduction band with an effective mass as small as 0.34 times the electron rest mass, which originates from the edge-sharing GeO$_6$ octahedra network. Although known compounds with octahedral GeO$_6$ coordination are commonly unstable at atmospheric pressure and elevated temperatures, $βべーた$-SrGe$_2$O$_5$ exhibits thermal stability up to 700 $^\circ$C. △ Less

Submitted 18 November, 2020; originally announced November 2020.

Comments: 23 pages, 8 figures

Shallow Valence Band of Rutile GeO$_2$ and P-type Doping

Authors: Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

Abstract: GeO$_2$ has an $αあるふぁ$-quartz-type crystal structure with a very wide fundamental band gap of 6.6 eV and is a good insulator. Here we find that the stable rutile-GeO$_2$ polymorph with a 4.6 eV band gap has a surprisingly low $\sim$6.8 eV ionization potential, as predicted from the band alignment using first-principles calculations. Because of the short O$-$O distances in the rutile structure containi… ▽ More GeO$_2$ has an $αあるふぁ$-quartz-type crystal structure with a very wide fundamental band gap of 6.6 eV and is a good insulator. Here we find that the stable rutile-GeO$_2$ polymorph with a 4.6 eV band gap has a surprisingly low $\sim$6.8 eV ionization potential, as predicted from the band alignment using first-principles calculations. Because of the short O$-$O distances in the rutile structure containing cations of small effective ionic radii such as Ge$^{4+}$, the antibonding interaction between O 2p orbitals raises the valence band maximum energy level to an extent that hole doping appears feasible. Experimentally, we report the flux growth of $1.5 \times 1.0 \times 0.8$ mm$^3$ large rutile GeO$_2$ single crystals and confirm the thermal stability for temperatures up to $1021 \pm 10~^\circ$C. X-ray fluorescence spectroscopy shows the inclusion of unintentional Mo impurities from the Li$_2$O$-$MoO$_3$ flux, as well as the solubility of Ga in the r-GeO$_2$ lattice as a prospective acceptor dopant. The resistance of the Ga- and Mo-codoped r-GeO$_2$ single crystals is very high at room temperature, but it decreases by 2-3 orders of magnitude upon heating to 300 $^\circ$C, which is attributed to thermally-activated p-type conduction. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon

Authors: K. M. Kojima, M. Hiraishi, H. Okabe, A. Koda, 2 R. Kadono, K. Ide, S. Matsuishi, H. Kumomi, T. Kamiya, H. Hosono

Abstract: We report on the local electronic structure of interstitial muon (Mu) as pseudo-hydrogen in In-Ga-Zn oxide (IGZO) semiconductor studied by muon spin rotation/relaxation ($μみゅー$SR) experiment. In polycrystalline (c-) IGZO, it is inferred that Mu is in a diamagnetic state, where the $μみゅー$SR time spectra under zero external field is perfectly described by the Gaussian Kubo-Toyabe relaxation function with… ▽ More We report on the local electronic structure of interstitial muon (Mu) as pseudo-hydrogen in In-Ga-Zn oxide (IGZO) semiconductor studied by muon spin rotation/relaxation ($μみゅー$SR) experiment. In polycrystalline (c-) IGZO, it is inferred that Mu is in a diamagnetic state, where the $μみゅー$SR time spectra under zero external field is perfectly described by the Gaussian Kubo-Toyabe relaxation function with the linewidth $Δでるた$ serving as a sensitive measure for the random local fields from In/Ga nuclear magnetic moments. The magnitude of $Δでるた$ combined with the density functional theory calculations for H (to mimic Mu) suggests that Mu occupies Zn-O bond-center site (Mu$_{\rm BC}$) similar to the case in crystalline ZnO. This implies that the diamagnetic state in c-IGZO corresponds to Mu$_{\rm BC}^+$, thus serving as an electron donor. In amorphous (a-) IGZO, the local Mu structure in as-deposited films is nearly identical with that in c-IGZO, suggesting Mu$_{\rm BC}^+$ for the electronic state. In contrast, the diamagnetic signal in heavily hydrogenated a-IGZO films exhibits the Lorentzian Kubo-Toyabe relaxation, implying that Mu accompanies more inhomogeneous distribution of the neighboring nuclear spins that may involve Mu$^-$H$^-$-complex state in an oxygen vacancy. △ Less

Submitted 1 September, 2019; originally announced September 2019.

Comments: 5 pages (in double column), 3 figures

Journal ref: Appl. Phys. Lett. 115, 122104 (2019)

Particulate Generation on Surface of Iron Selenide Films by Air Exposure

Authors: Hidenori Hiramatsu, Kota Hanzawa, Toshio Kamiya, Hideo Hosono

Abstract: Nanometer-sized particular structures are generated on the surfaces of FeSe epitaxial films directly after exposure to air; this phenomenon was studied in the current work because these structures are an obstacle to field-induced superconductivity in electric double-layer transistors using FeSe channel layers. Chemical analyses using field-effect scanning Auger electron spectroscopy revealed no cl… ▽ More Nanometer-sized particular structures are generated on the surfaces of FeSe epitaxial films directly after exposure to air; this phenomenon was studied in the current work because these structures are an obstacle to field-induced superconductivity in electric double-layer transistors using FeSe channel layers. Chemical analyses using field-effect scanning Auger electron spectroscopy revealed no clear difference in the chemical composition between the particular structures and the other flat surface region. This observation limits the possible origins of the particulate formation to light elements in air such as O, C, H, and N. △ Less

Submitted 31 January, 2019; v1 submitted 15 January, 2019; originally announced January 2019.

Comments: Accepted for publication in J. Supercond. Nov. Magn

Journal ref: J. Supercond. Nov. Magn., 32, 3047-3055 (2019)

Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy

Authors: Kota Hanzawa, Yuta Yamaguchi, Yukiko Obata, Satoru Matsuishi, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: This paper reports that ~10-nm-thick FeSe thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe has a metallic electronic structure that has been confirmed by photoemission spectroscopy and first-principles calculations. This apparent contradiction is explained by potential barriers formed in the conduction band. Ver… ▽ More This paper reports that ~10-nm-thick FeSe thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe has a metallic electronic structure that has been confirmed by photoemission spectroscopy and first-principles calculations. This apparent contradiction is explained by potential barriers formed in the conduction band. Very thin FeSe epitaxial films with various [Fe]/[Se] were fabricated by molecular beam epitaxy and classified into two groups with respect to lattice strain and electrical properties. Lattice parameter a increased and lattice parameter c decreased with increasing [Fe]/[Se] up to 1.1 and then a levelled off and c began to decrease at higher [Fe]/[Se]. Consequently, the FeSe films had the most strained lattice when [Fe]/[Se] was 1.1, but these films had the best quality with respect to crystallinity and surface flatness. All the FeSe films with [Fe]/[Se] of 0.8-1.9 exhibited insulator-like behavior, but the temperature dependences of their electrical resistivities exhibited different activation energies Ea between the Se-rich and Fe-rich regions; i.e., Ea were small (a few meV) up to [Fe]/[Se]=1.1 but jumped up to ~25 meV at higher [Fe]/[Se]. The film with [Fe]/[Se]=1.1 had the smallest Ea of 1.1 meV and exhibited an insulator-superconducting transition at 35 K with zero resistance under gate bias. The large Ea of the Fe-rich films was attributed to the unusual lattice strain with tensile in-plane and relaxed out-of-plane strains. The large Ea of films with [Fe]/[Se]>1.1 resulted in low mobility with a high potential barrier of ~50 meV in the conduction band for percolation carrier conduction compared with that of the [Fe]/[Se]=1.1 film (~17 meV). Therefore, the Fe-rich films exhibited remarkable insulator-like behavior similar to a semiconductor despite their metallic electronic structure. △ Less

Submitted 25 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. B 99, 035148 (2019)

Laboratory demonstration of a cryogenic deformable mirror for wavefront correction of space-borne infrared telescopes

Authors: Aoi Takahashi, Keigo Enya, Kanae Haze, Hirokazu Kataza, Takayuki Kotani, Hideo Matsuhara, Tomohiro Kamiya, Tomoyasu Yamamuro, Paul Bierden, Steven Cornelissen, Charlie Lam, Michael Feinberg

Abstract: This paper demonstrates a cryogenic deformable mirror (DM) with 1,020 actuators based on micro-electrical mechanical systems (MEMS) technology. Cryogenic space-borne infrared telescopes can experience a wavefront error due to a figure error of their mirror surface, which makes the imaging performance worse. For on-orbit wavefront correction as one solution, we developed a MEMS-processed electro-st… ▽ More This paper demonstrates a cryogenic deformable mirror (DM) with 1,020 actuators based on micro-electrical mechanical systems (MEMS) technology. Cryogenic space-borne infrared telescopes can experience a wavefront error due to a figure error of their mirror surface, which makes the imaging performance worse. For on-orbit wavefront correction as one solution, we developed a MEMS-processed electro-static DM with a special surrounding structure for use under the cryogenic temperature. We conducted a laboratory demonstration of its operation in three cooling cycles between 5 K and 295 K. Using a laser interferometer, we detected the deformation corresponding to the applied voltages under the cryogenic temperature for the first time. The relationship between voltages and displacements was qualitatively expressed by the quadratic function, which is assumed based on the principle of electro-static DMs. We also found that it had a high operating repeatability of a few nm RMS and no significant hysteresis. Using the measured values of repeatability, we simulated the improvement of PSF by wavefront correction with our DM. These results show that our developed DM is effective in improving imaging performance and PSF contrast of space-borne infrared telescopes. △ Less

Submitted 29 September, 2017; originally announced October 2017.

Comments: 29 pages, 23 figures

Journal ref: Applied Optics, Vol.56, Issue 23, pp. 6694-6708 (2017)

BaFe2(As1-xPx)2 (x = 0.22-0.42) thin films grown on practical metal-tape substrates and their critical current densities

Authors: Hidenori Hiramatsu, Hikaru Sato, Toshio Kamiya, Hideo Hosono

Abstract: We optimized the substrate temperature (Ts) and phosphorus concentration (x) of BaFe2(As1-xPx)2 films on practical metal-tape substrates for pulsed laser deposition from the viewpoints of crystallinity, superconductor critical temperature (Tc), and critical current density (Jc). It was found that the optimum Ts and x values are 1050 degree C and x = 0.28, respectively. The optimized film exhibits… ▽ More We optimized the substrate temperature (Ts) and phosphorus concentration (x) of BaFe2(As1-xPx)2 films on practical metal-tape substrates for pulsed laser deposition from the viewpoints of crystallinity, superconductor critical temperature (Tc), and critical current density (Jc). It was found that the optimum Ts and x values are 1050 degree C and x = 0.28, respectively. The optimized film exhibits Tc_onset = 26.6 and Tc_zero = 22.4 K along with a high self-field Jc at 4 K (~1 MA/cm2) and relatively isotropic Jc under magnetic fields up to 9 T. Unexpectedly, we found that lower crystallinity samples, which were grown at a higher Ts of 1250 degree C than the optimized Ts = 1050 degree C, exhibit higher Jc along the ab plane under high magnetic fields than the optimized samples. The presence of horizontal defects that act as strong vortex pinning centers, such as stacking faults, are a possible origin of the high Jc values in the poor crystallinity samples. △ Less

Submitted 19 March, 2017; originally announced March 2017.

Journal ref: Supercond. Sci. Technol. 30 (2017) 044003

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$

Authors: Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya

Abstract: Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflect… ▽ More Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflectance and Raman-scattering analysis to evaluate the electron transport governed by optical phonon scattering. A calculated room-temperature mobility on the order of $3.9 \times 10^2$ cm$^2$V$^{-1}$s$^{-1}$ is obtained, identifying cubic SrGeO$_3$ as one of the most promising TCOs. Employing classical phonon theory and a combined experimental-theoretical approach, a comprehensive analysis of the intrinsic electron mobility in the cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$, and SrTiO$_3$ is provided based on the magnitude of polarization and eigenfrequency of optically active phonons. △ Less

Submitted 24 March, 2020; v1 submitted 5 December, 2016; originally announced December 2016.

Comments: 28 pages, 9 figures

Journal ref: Phys. Rev. B 101, 125206 (2020)

Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO$_3$

Authors: Christian A. Niedermeier, Sneha Rhode, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Michelle A. Moram

Abstract: The high room temperature mobility and the electron effective mass in BaSnO$_3$ are investigated in depth by evaluation of the free carrier absorption observed in infrared spectra for epitaxial films with free electron concentrations from $8.3 \times 10^{18}$ to $7.3 \times 10^{20}$~cm$^{-3}$. Both the optical band gap widening by conduction band filling and the carrier scattering mechanisms in th… ▽ More The high room temperature mobility and the electron effective mass in BaSnO$_3$ are investigated in depth by evaluation of the free carrier absorption observed in infrared spectra for epitaxial films with free electron concentrations from $8.3 \times 10^{18}$ to $7.3 \times 10^{20}$~cm$^{-3}$. Both the optical band gap widening by conduction band filling and the carrier scattering mechanisms in the low and high doping regimes are consistently described employing parameters solely based on the intrinsic physical properties of BaSnO$_3$. The results explain the current mobility limits in epitaxial films and demonstrate the potential of BaSnO$_3$ to outperform established wide band gap semiconductors also in the moderate doping regime. △ Less

Submitted 6 December, 2016; v1 submitted 18 September, 2016; originally announced September 2016.

Comments: 26 pages, 9 figures

Journal ref: Phys. Rev. B 95, 161202 (2017)

Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries

Authors: Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: Thin films of the iron-based superconductor BaFe2(As1-xPx)2 (Ba122:P) were fabricated on polycrystalline metal-tape substrates with two kinds of in-plane grain boundary alignments (well aligned (4 deg.) and poorly aligned (8 deg.)) by pulsed laser deposition. The poorly aligned substrate is not applicable to cuprate-coated conductors because the in-plane alignment >4 deg. results in exponential de… ▽ More Thin films of the iron-based superconductor BaFe2(As1-xPx)2 (Ba122:P) were fabricated on polycrystalline metal-tape substrates with two kinds of in-plane grain boundary alignments (well aligned (4 deg.) and poorly aligned (8 deg.)) by pulsed laser deposition. The poorly aligned substrate is not applicable to cuprate-coated conductors because the in-plane alignment >4 deg. results in exponential decay of the critical current density (Jc). The Ba122:P film exhibited higher Jc at 4 K when grown on the poorly aligned substrate than on the well-aligned substrate even though the crystallinity was poorer. It was revealed that the misorientation angles of the poorly aligned samples were less than 6 deg., which are less than the critical angle of an iron-based superconductor, cobalt-doped BaFe2As2 (~9 deg.), and the observed strong pinning in the Ba122:P is attributed to the high-density grain boundaries with the misorientation angles smaller than the critical angle. This result reveals a distinct advantage over cuprate-coated conductors because well-aligned metal-tape substrates are not necessary for practical applications of the iron-based superconductors. △ Less

Submitted 13 November, 2016; v1 submitted 5 June, 2016; originally announced June 2016.

Journal ref: Sci. Rep. 6, 36828 (2016)

Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2

Authors: Taisuke Hatakeyama, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: We propose a novel solid-phase epitaxy technique applicable to high annealing temperatures up to 1000 C without re-vaporization of alkali metal elements with high vapor pressures. This technique is demonstrated through the successful growth of high-quality KFe2As2 epitaxial films. The key factors are employing a custom-designed alumina vessel/cover and sealing it in a stainless tube with a large a… ▽ More We propose a novel solid-phase epitaxy technique applicable to high annealing temperatures up to 1000 C without re-vaporization of alkali metal elements with high vapor pressures. This technique is demonstrated through the successful growth of high-quality KFe2As2 epitaxial films. The key factors are employing a custom-designed alumina vessel/cover and sealing it in a stainless tube with a large amount of atmospheric KFe2As2 powder in tightly closed sample spaces. This technique can also be effective for other materials composed of elements with very high vapor pressures, such as alkali metals, and can lead to the realization of spintronics devices in the future using KFe2As2. △ Less

Submitted 9 April, 2016; originally announced April 2016.

Journal ref: Appl. Phys. Express 9, 055505 (2016)

Electric field-induced superconducting transition of insulating FeSe thin film at 35 K

Authors: Kota Hanzawa, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc cuprates. To induce a superconductor transition in an insulating phase, injection of a high density of carriers is needed (e.g., by impurity doping). An electric double… ▽ More It is thought that strong electron correlation in an insulating parent phase would enhance a critical temperature (Tc) of superconductivity in a doped phase via enhancement of the binding energy of a Cooper pair as known in high-Tc cuprates. To induce a superconductor transition in an insulating phase, injection of a high density of carriers is needed (e.g., by impurity doping). An electric double-layer transistor (EDLT) with an ionic liquid gate insulator enables such a field-induced transition to be investigated and is expected to result in a high Tc because it is free from deterioration in structure and carrier transport that are in general caused by conventional carrier doping (e.g., chemical substitution). Here, for insulating epitaxial thin films (~10 nm thick) of FeSe, we report a high Tc of 35 K, which is four times higher than that of bulk FeSe, using an EDLT under application of a gate bias of +5.5 V. Hall effect measurements under the gate bias suggest that highly accumulated electron carrier in the channel, whose area density is estimated to be 1.4x10^15 cm-2 (the average volume density of 1.7x10^21 cm-3), is the origin of the high-Tc superconductivity. This result demonstrates that EDLTs are useful tools to explore the ultimate Tc for insulating parent materials. △ Less

Submitted 28 March, 2016; v1 submitted 31 August, 2015; originally announced August 2015.

Comments: PNAS Early Edition

Journal ref: Proc. Natl. Acad. Sci. USA 113, 3986 (2016)

Complete $(p,q)$-elliptic integrals with application to a family of means

Authors: Toshiki Kamiya, Shingo Takeuchi

Abstract: The complete elliptic integrals are generalized by using the generalized trigonometric functions with two parameters. It is shown that a particular relation holds for the generalized integrals. Moreover, as an application of the integrals, an alternative proof of a result for a family of means by Bhatia and Li, which involves the logarithmic mean and the arithmetic-geometric mean, is given. The complete elliptic integrals are generalized by using the generalized trigonometric functions with two parameters. It is shown that a particular relation holds for the generalized integrals. Moreover, as an application of the integrals, an alternative proof of a result for a family of means by Bhatia and Li, which involves the logarithmic mean and the arithmetic-geometric mean, is given. △ Less

Submitted 24 November, 2015; v1 submitted 6 July, 2015; originally announced July 2015.

Comments: 13 pages

Journal ref: Journal of Classical Analysis 10 (2017), no.1, 15-25

Ligand-Hole in SnI6 Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6

Authors: Zewen Xiao, Hechang Lei, Xiao Zhang, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya

Abstract: This paper has been published in Bulletin of the Chemical Society of Japan, which can be viewed at the following URL: http://doi.org/10.1246/bcsj.20150110 Cs2SnI6, a variant of perovskite CsSnI3, is expected for a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I-, and Sn4+ ions and that the band gap is primarily made of occupied I- 5p6 valen… ▽ More This paper has been published in Bulletin of the Chemical Society of Japan, which can be viewed at the following URL: http://doi.org/10.1246/bcsj.20150110 Cs2SnI6, a variant of perovskite CsSnI3, is expected for a photovoltaic material. Based on a simple ionic model, it is expected that Cs2SnI6 is composed of Cs+, I-, and Sn4+ ions and that the band gap is primarily made of occupied I- 5p6 valence band maximum (VBM) and unoccupied Sn4+ 5s conduction band minimum (CBM) similar to SnO2. In this work, we performed density functional theory (DFT) calculations and revealed that the real oxidation state of the Sn ion in Cs2SnI6 is +2 similar to CsSnI3. The +2 oxidation state of Sn originates from 2 ligand holes in the [SnI6]2- octahedron unit, where the ligand [I6] cluster has the apparent [I66-L+2]4- oxidation state, because the band gap is formed mainly by occupied I 5p VBM and unoccupied I 5p CBM. The +2 oxidation state of Sn and the band gap are originated from the intracluster hybridization and stabilized by the strong covalent interaction between Sn and I. △ Less

Submitted 4 June, 2015; v1 submitted 4 March, 2015; originally announced March 2015.

Intrinsic defects in photovoltaic perovskite variant Cs2SnI6

Authors: Zewen Xiao, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya

Abstract: Note: This paper has been published in Physical Chemistry Chemical Physics, which can be viewed at the following URL: http://doi.org/10.1039/C5CP03102H Cs2SnI6, a rarely studied perovskite variant material, is recently gaining a lot of interest in the field of photovoltaics owing to its nontoxity, air-stability and promissing photovoltaic properties. In this work, we report intrinsic defects in Cs… ▽ More Note: This paper has been published in Physical Chemistry Chemical Physics, which can be viewed at the following URL: http://doi.org/10.1039/C5CP03102H Cs2SnI6, a rarely studied perovskite variant material, is recently gaining a lot of interest in the field of photovoltaics owing to its nontoxity, air-stability and promissing photovoltaic properties. In this work, we report intrinsic defects in Cs2SnI6 using first-principles density functional theory calculations. It is revealed that iodine vacancy and tin interstitial are the dominant defects that are responsible for the intrinsic n-type conduction in Cs2SnI6. Tin vacancy has a very high formation energy (>3.6 eV) due to the strong covalency in the Sn-I bonds and is hardly generated for p-type doping. All the dominant defects in Cs2SnI6 have deep transition levels in the band gap. It is suggested that the formation of the deep defects can be suppressed significantly by employing an I-rich synthesis condition, which is inevitable for photovoltaic and other semiconductor applications. △ Less

Submitted 25 June, 2015; v1 submitted 22 February, 2015; originally announced February 2015.

n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route

Authors: Fan-Yong Ran, Zewen Xiao, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Abstract: Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb2+ for Sn2+ converted the majority carrier from hole… ▽ More Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb2+ for Sn2+ converted the majority carrier from hole to electron, and the free electron density ranged from 1012 to 1015 cm-3 with the largest electron mobility of 7.0 cm2/(Vs). The n-type conduction was confirmed further by the position of the Fermi level (EF) based on photoemission spectroscopy and electrical characteristics of pn heterojunctions. Density functional theory calculations reveal that the Pb substitution invokes a geometrical size effect that enlarges the interlayer distance and subsequently reduces the formation energies of Sn and Pb interstitials, which work as electron donors. △ Less

Submitted 12 February, 2015; originally announced February 2015.

Report number: 10428

Journal ref: Sci. Rep. 5, 10428 (2015)

Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins

Authors: Zewen Xiao, Hidenori Hiramatsu, Shigenori Ueda, Yoshitake Toda, Fan-Yong Ran, Jiangang Guo, Hechang Lei, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya

Abstract: Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is det… ▽ More Beta-BaZn2As2 is known to be a p-type semiconductor with the layered crystal structure similar to that of LaZnAsO, leading to the expectation that beta-BaZn2As2 and LaZnAsO have similar bandgaps; however, the bandgap of beta-BaZn2As2 (previously-reported value ~0.2 eV) is one order of magnitude smaller than that of LaZnAsO (1.5 eV). In this paper, the reliable bandgap value of beta-BaZn2As2 is determined to be 0.23 eV from the intrinsic region of the tem-perature dependence of electrical conductivity. The origins of this narrow bandgap are discussed based on the chemi-cal bonding nature probed by 6 keV hard X-ray photoemission spectroscopy, hybrid density functional calculations, and the ligand theory. One origin is the direct As-As hybridization between adjacent [ZnAs] layers, which leads to a secondary splitting of As 4p levels and raises the valence band maximum. The other is that the non-bonding Ba 5dx2-y2 orbitals form unexpectedly deep conduction band minimum (CBM) in beta-BaZn2As2 although the CBM of LaZnAsO is formed mainly of Zn 4s. These two origins provide a quantitative explanation for the bandgap difference between beta-BaZn2As2 and LaZnAsO. △ Less

Submitted 11 February, 2015; originally announced February 2015.

Journal ref: J. Am. Chem. Soc. 136, 14959-14965 (2014)

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition

Authors: Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

Abstract: We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal… ▽ More We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm2 irrespective of the laser wavelength. △ Less

Submitted 1 May, 2014; v1 submitted 21 April, 2014; originally announced April 2014.

Journal ref: Applied Physics Letters 104, 172602 (2014)

High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers

Authors: Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: We report herein a high and isotropic critical-current density Jc for BaFe2(As,P)2 epitaxial films. The isotropy of Jc with respect to the magnetic-field direction was improved significantly by decreasing the film growth rate to 2.2 Å/s. The low growth rate served to preferentially align dislocations along the c-axis, which work well as c-axis vortex-pinning centers. Because of the intentional int… ▽ More We report herein a high and isotropic critical-current density Jc for BaFe2(As,P)2 epitaxial films. The isotropy of Jc with respect to the magnetic-field direction was improved significantly by decreasing the film growth rate to 2.2 Å/s. The low growth rate served to preferentially align dislocations along the c-axis, which work well as c-axis vortex-pinning centers. Because of the intentional introduction of effective pinning, the absolute Jc at 9 T was larger than that obtained for other iron-based superconductors and conventional alloy superconducting wires. △ Less

Submitted 17 May, 2014; v1 submitted 8 March, 2014; originally announced March 2014.

Journal ref: Applied Physics Letters 104, 182603 (2014)

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2

Authors: Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transi… ▽ More A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier doping into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 insulating epitaxial film with an atomically flat surface and examined its electrostatic carrier doping using an electric double-layer transistor (EDLT) structure with an ionic liquid gate. The positive gate voltage gave conductance modulation of three orders of magnitude at 25 K, and further induced and manipulated a phase transition; i.e., delocalized carrier generation by electrostatic doping is the origin of the phase transition. This is the first demonstration, to the authors' knowledge, of an EDLT using a Mott insulator iron-selenide channel and opens a way to explore high-Tc superconductivity in iron-based layered materials, where carrier doping by conventional chemical means is difficult. △ Less

Submitted 4 March, 2014; v1 submitted 12 February, 2014; originally announced February 2014.

Comments: PNAS Early Edition

Journal ref: Proc. Natl. Acad. Sci. USA vol. 111, pp. 3979-3983 (2014)

Epitaxial Growth and Electronic Structure of a Layered Zinc Pnictide Semiconductor, beta-BaZn2As2

Authors: Zewen Xiao, Fan-Yong Ran, Hidenori Hiramatsu, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya

Abstract: BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2 were grown on single-crystal MgO (001) substrates by a reactive solid-phase epitaxy technique. Out-of-plane and in-plane epitaxial relationships between the film a… ▽ More BaZn2As2 is expected for a good p-type semiconductor and has two crystalline phases of an orthorhombic alpha phase and a higher-symmetry tetragonal beta phase. Here, we report high-quality epitaxial films of the tetragonal beta-BaZn2As2 were grown on single-crystal MgO (001) substrates by a reactive solid-phase epitaxy technique. Out-of-plane and in-plane epitaxial relationships between the film and the substrate were BaZn2As2 (00l)//MgO (001) and BaZn2As2 [200]//MgO [200], respectively. The full-widths at half maximum were 0.082o for a 008 out-of-plane rocking curve and 0.342o for a 200 in-plane rocking curve. A step-and-terrace structure was observed by atomic force microscopy. The band gap of beta-BaZn2As2 was evaluated to be around 0.2 eV, which is much smaller than that of a family compound LaZnOAs (1.5 eV). Density functional theory calculation using the Heyd-Scuseria-Ernzerhof hybrid functionals supports the small band gap. △ Less

Submitted 29 November, 2013; v1 submitted 25 November, 2013; originally announced November 2013.

Comments: 6 pages, 8 figures, Thin Solid Films, in press

Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films

Authors: Takayoshi Katase, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: Applying an external pressure to indirectly electron-doped 122-type (Ba1-xLax)Fe2As2 epitaxial films enhances the superconducting critical temperature (Tc) up to 30.3 K. Different from the other family compounds, the Tc is enhanced not only in the under-doped region but also in the optimally doped and over-doped regions. Narrowing of the superconducting transition width and an increase in the carr… ▽ More Applying an external pressure to indirectly electron-doped 122-type (Ba1-xLax)Fe2As2 epitaxial films enhances the superconducting critical temperature (Tc) up to 30.3 K. Different from the other family compounds, the Tc is enhanced not only in the under-doped region but also in the optimally doped and over-doped regions. Narrowing of the superconducting transition width and an increase in the carrier density take place simultaneously in the whole doping region, except at the heavily over-doped limit. This characteristic is unique to and observed only in (Ba1-xLax)Fe2As2, in which the La doping is stabilized via non-equilibrium growth of the vapor phase epitaxy, among the 122-type iron-based superconductors, AFe2As2 (A = Ba, Sr, and Ca). △ Less

Submitted 11 October, 2013; v1 submitted 26 September, 2013; originally announced September 2013.

Comments: Accepted for publication as a Rapid Commun. in Phys. Rev. B

Journal ref: Phys. Rev. B 88, 140503(R) (2013)

Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films

Authors: Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: The effect of electron doping by trivalent charge state rare-earth ion (RE = La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 was examined using epitaxial films. Each of the RE substitutions suppressed the resistivity anomaly associated with the magnetic/structural phase transitions, leading to the resistivity drops and superconductivity transitions. Bulk superconductivity wa… ▽ More The effect of electron doping by trivalent charge state rare-earth ion (RE = La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 was examined using epitaxial films. Each of the RE substitutions suppressed the resistivity anomaly associated with the magnetic/structural phase transitions, leading to the resistivity drops and superconductivity transitions. Bulk superconductivity was observed at the maximum onset critical temperature (Tconset) of 22.4 K for La-doping and 13.4 K for Ce-doping, while only broad resistivity drops were observed at 6.2 K for Pr-doping and 5.8 K for Nd-doping but neither zero resistivity nor distinct Meissner effect were observed at least down to 2 K. The decrease in Tconset with increasing the number of RE 4f electrons cannot be explained in terms of the crystalline qualities or crystallographic structure parameters of the BaFe2As2 films. It was clarified, based on resistivity-temperature analyses, that magnetic scattering became increasingly significant in the above order of the RE dopants. The negative magnetoresistance was enhanced by the Ce- and Pr-doping, implying that the decrease in Tc originates from magnetic pair breaking by interaction of the localized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals. △ Less

Submitted 1 July, 2013; originally announced July 2013.

Comments: To be published in New Journal of Physics

Journal ref: New J. Phys., 15, 073019 (2013)

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm2

Authors: Hikaru Sato, Takayoshi Katase, Won Nam Kang, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρろーxy and the longitudinal resistivity ρろーxx follow power law scaling ρろーxy = Aρろーxxβべーた. In the temperature-sweep with a fixed field (T sweep), all of the βべーた values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the βべーた va… ▽ More The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρろーxy and the longitudinal resistivity ρろーxx follow power law scaling ρろーxy = Aρろーxxβべーた. In the temperature-sweep with a fixed field (T sweep), all of the βべーた values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the βべーた values in the magnetic-field sweep with a fixed temperature (H sweep) change from 1.8 to 2.0 as the temperature increases from 13 to 16 K even in the T/H region that overlaps with the T sweep measurements. These results indicate that the vortices introduced at low temperatures are trapped by strong pinning centers, but a portion of the vortices introduced at high temperatures are not strongly trapped by the pinning centers. The sign of ρろーxy is negative, and a sign reversal is not detected. These distinct scaling behaviors, which sharply contrast cuprates and MgB2, are explained by high-density c-axis pinning centers in the Ba(Fe1-xCox)2As2 epitaxial film and are consistent with a wider vortex liquid phase. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Journal ref: Phys. Rev. B 87, 064504 (2013)

Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition

Authors: Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

Abstract: A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much… ▽ More A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that the difference in the electron doping sites does not influence the superconducting properties of 122-type SrFe2As2. △ Less

Submitted 1 February, 2013; originally announced February 2013.

Journal ref: IEEE Trans. Appl. Supercond. 23, 7300405 (2013)

Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1--xCox)2As2 (AE = alkaline earth)

Authors: Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet laser as an excitation source. The most critical parameter to produce the SrFe2As2:Co and BaFe2As2:Co phases is the substrate temperature (Ts). It is difficult… ▽ More This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet laser as an excitation source. The most critical parameter to produce the SrFe2As2:Co and BaFe2As2:Co phases is the substrate temperature (Ts). It is difficult to produce highly-pure CaFe2As2:Co phase thin film at any Ts. For BaFe2As2:Co epitaxial films, controlling Ts at 800-850 °C and growth rate to 2.8-3.3 Å/s produced high-quality films with good crystallinity, flat surfaces, and high critical current densities > 1 MA/cm2, which were obtained for film thicknesses from 100 to 500 nm. The doping concentration x was optimized for Ba(Fe1-xCox)2As2 epitaxial films, leading to the highest critical temperature of 25.5 K in the epitaxial films with the nominal x = 0.075. △ Less

Submitted 18 May, 2012; originally announced May 2012.

Comments: will be published in the special issue of Superconductor Science and Technology, `Iron12'

Journal ref: Supercond. Sci. Technol., 25 (2012) 084015

Identification of high energy ions using backscattered particles in laser-driven ion acceleration with cluster-gas targets

Authors: Y. Fukuda, H. Sakaki, M. Kanasaki, A. Yogo, S. Jinno, M. Tampo, A. Ya. Faenov, T. A. Pikuz, Y. Hayashi, M. Kando, A. S. Pirozhkov, T. Shimomura, H. Kiriyama, S. Kurashima, T. Kamiya, K. Oda, T. Yamauchi, K. Kondo, S. V. Bulanov

Abstract: A new diagnosis method for high energy ions utilizing a single CR-39 detector mounted on plastic plates is demonstrated to identify the presence of the high energy component beyond the CR-39's detection threshold limit. On irradiation of the CR-39 detector unit with a 25 MeV per nucleon He ion beam from conventional rf-accelerators, a large number of etch pits having elliptical opening shapes are… ▽ More A new diagnosis method for high energy ions utilizing a single CR-39 detector mounted on plastic plates is demonstrated to identify the presence of the high energy component beyond the CR-39's detection threshold limit. On irradiation of the CR-39 detector unit with a 25 MeV per nucleon He ion beam from conventional rf-accelerators, a large number of etch pits having elliptical opening shapes are observed on the rear surface of the CR-39. Detailed investigations reveal that these etch pits are created by heavy ions inelastically backscattered from the plastic plates. This ion detection method is applied to laser-driven ion acceleration experiments using cluster-gas targets, and ion signals with energies up to 50 MeV per nucleon are identified. △ Less

Submitted 21 December, 2011; originally announced December 2011.

Thin Film Growth and Device Fabrication of Iron-Based Superconductors

Authors: Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

Abstract: Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, d… ▽ More Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, device fabrication, and relevant bulk material properties. △ Less

Submitted 1 November, 2011; originally announced November 2011.

Comments: To appear in J. Phys. Soc. Jpn

Journal ref: J. Phys. Soc. Jpn. 81, 011011 (2012)

Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films

Authors: Takayoshi Katase, Soshi Iimura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film growth process. The substitution with La was substantiated by a systematic shrinkage of the c-axis lattice parameter due to the smaller ionic radius of La3+ than t… ▽ More Electron doping of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect doping), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film growth process. The substitution with La was substantiated by a systematic shrinkage of the c-axis lattice parameter due to the smaller ionic radius of La3+ than that of Ba2+. A negative Hall coefficient indicated that the majority carriers were electrons, as is consistent with this aliovalent ion doping. The La substitution suppressed an antiferromagnetic transition and induced bulk superconductivity at a maximum onset critical temperature (Tc) of 22.4 K. The electronic phase diagram for (Ba1-xLax)Fe2As2 was built, which revealed that the indirect electron doping at the Ba site with La [(Ba1-xLax)Fe2As2] exhibits almost the same Tc - doping level relation as that of the direct electron-doping at the Fe site with Co [Ba(Fe1-xCox)2As2]. This finding clarified that Tc in 122-type compounds is not affected by a crystallographic doping site, which is in sharp contrast to the 1111-type compounds, REFeAsO (RE = rare earth). It is tentatively attributed to the differences in their dimensionality of electronic structures and electron pairing symmetries. △ Less

Submitted 25 April, 2012; v1 submitted 30 September, 2011; originally announced October 2011.

Journal ref: Phys. Rev. B 85, 140516(R) (2012)

Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates

Authors: Takayoshi Katase, Hidenori Hiramatsu, Vladimir Matias, Chris Sheehan, Yoshihiro Ishimaru, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

Abstract: High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layer… ▽ More High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layers (delta fai MgO = 7.3o), and exhibited high self-field Jc up to 3.5 MA/cm2 at 2 K. These values are comparable to that on MgO single crystals and the highest Jc among iron pnictide superconducting tapes and wires ever reported. High in-field Jc suggests the existence of c-axis correlated vortex pinning centers. △ Less

Submitted 20 June, 2011; v1 submitted 29 March, 2011; originally announced March 2011.

Comments: Published in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 98 (2011) 242510

LaCo2B2: A Co-based layered superconductor with a ThCr2Si2-type structure

Authors: Hiroshi Mizoguchi, Toshiaki Kuroda, Toshio Kamiya, Hideo Hosono

Abstract: LaCo2B2 with a ThCr2Si2-type structure composed of alternately stacked La and CoB layers exhibits metallic electrical conductivity and Pauli paramagnetic behavior down to 2K. Bulk superconductivity with a Tc of ~4K emerges upon substitution with dopant elements; i.e., isovalent substitution to form (La1-xYx)Co2B2, or aliovalent substitution to form La(Co1-xFex)2B2. Highly covalent bonding between… ▽ More LaCo2B2 with a ThCr2Si2-type structure composed of alternately stacked La and CoB layers exhibits metallic electrical conductivity and Pauli paramagnetic behavior down to 2K. Bulk superconductivity with a Tc of ~4K emerges upon substitution with dopant elements; i.e., isovalent substitution to form (La1-xYx)Co2B2, or aliovalent substitution to form La(Co1-xFex)2B2. Highly covalent bonding between Co 3d and B 2p levels in the CoB layers, which is caused by the B 2p level being shallower than the Fermi level, removes magnetic ordering from Co 3d electrons even in the undoped samples. △ Less

Submitted 31 July, 2011; v1 submitted 2 March, 2011; originally announced March 2011.

Comments: 3 figures

Journal ref: Phys. Rev. Lett. 106 (2011) 237001

Advantageous grain boundaries in iron pnictide superconductors

Authors: Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

Abstract: High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High criti… ▽ More High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High critical temperature iron pnictide superconductors have advantages over cuprates with respect to these grain boundary issues. The transport properties through well-defined bicrystal grain boundary junctions with various misorientation angles (thetaGB) were systematically investigated for cobalt-doped BaFe2As2 (BaFe2As2:Co) epitaxial films fabricated on bicrystal substrates. The critical current density through bicrystal grain boundary (JcBGB) remained high (> 1 MA/cm2) and nearly constant up to a critical angle thetac of ~9o, which is substantially larger than the thetac of ~5o for YBCO. Even at thetaGB > thetac, the decay of JcBGB was much smaller than that of YBCO. △ Less

Submitted 11 July, 2011; v1 submitted 26 November, 2010; originally announced November 2010.

Comments: to appear in Nature Communications

Journal ref: Nature Communications 2 (2011) 409

High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers

Authors: Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

Abstract: High critical current densities Jc of 4 MA/cm2 at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high Jc. The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high cr… ▽ More High critical current densities Jc of 4 MA/cm2 at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high Jc. The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high crystallinity (crystallite tilt angle delta omega = 0.5 deg and twist angle delta fai = 0.5 deg) and a sharp superconducting transition with a width of 1.1 K. It is considered that these improvements resulted in the enhanced superconducting properties comparable to those of single crystals. △ Less

Submitted 12 May, 2010; originally announced May 2010.

Comments: to be published in Applied Physics Express

Journal ref: Applied Physics Express 3 (2010) 063101

DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films

Authors: Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

Abstract: DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with… ▽ More DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hzへるつ. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary. △ Less

Submitted 4 July, 2010; v1 submitted 12 May, 2010; originally announced May 2010.

Journal ref: published in Supercond. Sci. Technol. 23 082001 (2010)

Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La, Sr)(Al, Ta)O3 bicrystal substrates

Authors: Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

Abstract: Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10m-wide microbridges spanning a 30-degrees-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current-voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges… ▽ More Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10m-wide microbridges spanning a 30-degrees-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current-voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges without a BGB did not show the RSJ-like behavior, and their critical current densities were 20 times larger than those of BGB bridges, confirming BGB bridges display a Josephson effect originating from weakly-linked BGB. △ Less

Submitted 11 April, 2010; v1 submitted 20 January, 2010; originally announced January 2010.

Journal ref: APPLIED PHYSICS LETTERS 96, 142507 (2010)

Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and $^{31}$P-NMR Measurements

Authors: Hitoshi Sugawara, Kenji Ishida, Yusuke Nakai, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

Abstract: We have performed magnetization and $^{31}$P-NMR measurements on the itinerant ferromagnet LaCoPO (Curie temperature $T_{\rm Curie}\sim 44$ K) with a layered structure in order to investigate spin dynamics in the paramagnetic state. The linear scaling between the Knight shift $K$ at the P site and the bulk susceptibility $χかい$ above $T_{\rm Curie}$ indicates that the P nucleus is suitable for inve… ▽ More We have performed magnetization and $^{31}$P-NMR measurements on the itinerant ferromagnet LaCoPO (Curie temperature $T_{\rm Curie}\sim 44$ K) with a layered structure in order to investigate spin dynamics in the paramagnetic state. The linear scaling between the Knight shift $K$ at the P site and the bulk susceptibility $χかい$ above $T_{\rm Curie}$ indicates that the P nucleus is suitable for investigating magnetic properties. The temperature and magnetic field dependences of the nuclear spin-lattice relaxation rate divided by the temperature $1/T_1T$ at the P site show characteristic features of itinerant ferromagnets, such as ZrZn$_2$ and Y(Co$_{1-x}$Al$_x$)$_2$. In addition, the relationship between $1/T_1T$ and $χかい$ above $T_{\rm Curie}$ suggests that ferromagnetic fluctuations possess a two-dimensional (2D) characteristic. The present data show that LaCoPO is a unique ferromagnet, where the 2D fluctuations anticipated from the crystal structure are predominant down to almost $T_{\rm Curie}$. △ Less

Submitted 30 September, 2009; originally announced September 2009.

Comments: 5 pages, 6 figures, to appear in J. Phys. Soc. Jpn, Vol.78, No.11

Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe$_2$As$_2$

Authors: Takayoshi Katase, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Abstract: Epitaxial growth of Fe-based superconductors such as Co-doped SrFe$_2$As$_2$ (SrFe$_2$As$_2$:Co) was reported recently, but has still insufficient properties for device application because they have rough surfaces and are decomposed by reactions with water vapor in an ambient atmosphere. This letter reports that epitaxial films of Co-doped BaFe$_2$As$_2$ grown at 700 oC show the onset supercondu… ▽ More Epitaxial growth of Fe-based superconductors such as Co-doped SrFe$_2$As$_2$ (SrFe$_2$As$_2$:Co) was reported recently, but has still insufficient properties for device application because they have rough surfaces and are decomposed by reactions with water vapor in an ambient atmosphere. This letter reports that epitaxial films of Co-doped BaFe$_2$As$_2$ grown at 700 oC show the onset superconducting transition tempearture of 20 K. The transition is sharper than those observed on the SrFe$_2$As$_2$:Co films, which would originate from their improved crystallinity. These films also have atomically-flat surfaces with steps-and-terraces structures and exhibit chemical stability against exposure to water vapor. △ Less

Submitted 3 July, 2009; originally announced July 2009.

Journal ref: Solid State Communications 149 (2009), pp. 2121-2124

Water-induced superconductivity in SrFe2As2

Authors: Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Abstract: It has been considered that FeAs-based high transition temperature (high-Tc) superconductors need electron or hole doping by aliovalent ion substitution or large off-stoichiometry in order to induce superconductivity. We report that exposure of undoped SrFe2As2 epitaxial thin films to water vapor induces a superconducting transition. These films exhibit a higher onset-Tc (25 K) and larger magnet… ▽ More It has been considered that FeAs-based high transition temperature (high-Tc) superconductors need electron or hole doping by aliovalent ion substitution or large off-stoichiometry in order to induce superconductivity. We report that exposure of undoped SrFe2As2 epitaxial thin films to water vapor induces a superconducting transition. These films exhibit a higher onset-Tc (25 K) and larger magnetic field anisotropy than those of cobalt-doped SrFe2As2 epitaxial films, suggesting that the mechanism for the observed superconducting transition differs from that of the aliovalent-ion doped SrFe2As2. The present finding provides a new approach to induce superconductivity with a higher Tc in FeAs-based superconductors. △ Less

Submitted 22 March, 2009; originally announced March 2009.

Journal ref: Phys. Rev. B 80, 052501 (2009)

Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2 with Bilayered FeAs Structures and their Magnetic Anisotropy

Authors: Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Abstract: Superconducting epitaxial films of Fe-based layered arsenide, Co-doped SrFe2As2, were grown at 700oC on mixed perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed-laser deposition. Both the epitaxial film and an (001)-oriented film grown at 600oC exhibited superconducting transitions at ~ 20 K. The zero-resistance states of the epitaxial film were sustained under a magnetic fi… ▽ More Superconducting epitaxial films of Fe-based layered arsenide, Co-doped SrFe2As2, were grown at 700oC on mixed perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed-laser deposition. Both the epitaxial film and an (001)-oriented film grown at 600oC exhibited superconducting transitions at ~ 20 K. The zero-resistance states of the epitaxial film were sustained under a magnetic field (H) of 9 T at 9 K when H was parallel to the c-axis, while they were sustained at higher temperatures up to 10 K for H parallel to the a-axis. This is the first demonstration of superconducting thin films of FeAs-based new superconductors. △ Less

Submitted 3 September, 2008; v1 submitted 14 August, 2008; originally announced August 2008.

Comments: Revised manuscript: Accepted for publication in Appl. Phys. Express

Journal ref: Appl. Phys. Express 1, 101702 (2008)

Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

Authors: Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Abstract: Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those o… ▽ More Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ~0.2 eV, which is explained by ab-initio calculations. △ Less

Submitted 19 September, 2008; v1 submitted 14 August, 2008; originally announced August 2008.

Comments: Submission: 31st July 2008, Accepted for publication in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 93, 162504 (2008)

Itinerant Ferromagnetism in layered crystals LaCoOX (X = P, As)

Authors: Hiroshi Yanagi, Ryuto Kawamura, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Tetsuya Nakamura, Hitoshi Osawa, Hideo Hosono

Abstract: The electronic and magnetic properties of cobalt-based layered oxypnictides, LaCoOX (X = P, As), are investigated. LaCoOP and LaCoOAs show metallic type conduction, and the Fermi edge is observed by hard x-ray photoelectron spectroscopy. Ferromagnetic transitions occur at 43 K for LaCoOP and 66 K for LaCoOAs. Above the transition temperatures, temperature dependence of the magnetic susceptibilit… ▽ More The electronic and magnetic properties of cobalt-based layered oxypnictides, LaCoOX (X = P, As), are investigated. LaCoOP and LaCoOAs show metallic type conduction, and the Fermi edge is observed by hard x-ray photoelectron spectroscopy. Ferromagnetic transitions occur at 43 K for LaCoOP and 66 K for LaCoOAs. Above the transition temperatures, temperature dependence of the magnetic susceptibility follows the Curie-Weiss law. X-ray magnetic circular dichroism (XMCD) is observed at the Co L2,3-edge, but not at the other edges. The calculated electronic structure shows a spin polarized ground state. These results indicate that LaCoOX are itinerant ferromagnets and suggest that their magnetic properties are governed by spin fluctuation. △ Less

Submitted 1 June, 2008; originally announced June 2008.

Comments: 16 pages, 9 figures, Physical Review B, in press. Received 17 February 2008. Accepted 29 May 2008

Journal ref: Phys. Rev. B 77, 224431 (2008)