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Efficient Green Emission from Edge States in Graphene Perforated by Nitrogen Plasma Treatment
Authors:
N N Kovaleva,
D Chvostova,
Z Potůček,
H D Cho,
Xiao Fu,
L Fekete,
J Pokorny,
Z Bryknar,
K I Kugel,
A Dejneka,
T W Kang,
Gennady N Panin,
F V Kusmartsev
Abstract:
Plasma functionalization of graphene is one of the facile ways to tune its doping level without the need for wet chemicals making graphene photoluminescent. Microscopic corrugations in the two-dimensional structure of bilayer CVD graphene having a quasi-free-suspended top layer, such as graphene ripples, nanodomes, and bubbles, may significantly enhance local reactivity leading to etching effects…
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Plasma functionalization of graphene is one of the facile ways to tune its doping level without the need for wet chemicals making graphene photoluminescent. Microscopic corrugations in the two-dimensional structure of bilayer CVD graphene having a quasi-free-suspended top layer, such as graphene ripples, nanodomes, and bubbles, may significantly enhance local reactivity leading to etching effects on exposure to plasma. Here, we discovered that bilayer CVD graphene treated with nitrogen plasma exhibits efficient UV-green-red emission, where the excitation at 250 nm leads to photoluminescence with the peaks at 390, 470, and 620 nm, respectively. By using Raman scattering and spectroscopic ellipsometry, we investigated doping effects induced by oxygen or nitrogen plasma on the optical properties of single- and bilayer CVD graphene. The surface morphology of the samples was studied by atomic force microscopy. It is revealed that the top sheet of bilayer graphene becomes perforated after the treatment by nitrogen plasma. Our comprehensive study indicates that the dominant green emission is associated with the edge defect structure of perforated graphene filled with nitrogen. The discovered efficient emission appearing in nitrogen plasma treated perforated graphene may have a significant potential for the development of advanced optoelectronic materials.
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Submitted 19 November, 2019;
originally announced November 2019.
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Crossover critical behavior of Ga1-xMnxAs
Authors:
Sh. U. Yuldashev,
Kh. T. Igamberdiev,
Y. H. Kwon,
Sanghoon Lee,
X. Liu,
J. K. Furdyna,
A. G. Shashkov,
T. W. Kang
Abstract:
The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, the critical exponent α for the samples investigated has been determined. With approaching close to the critical temperature, th…
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The critical behavior of Ga1-xMnxAs in a close vicinity of the Curie temperature was experimentally studied by using the thermal diffusivity measurements. Taking into account that the inverse of the thermal diffusivity has the same critical behavior as the specific heat, the critical exponent α for the samples investigated has been determined. With approaching close to the critical temperature, the crossover from the mean-field-like to the Ising-like critical behavior has been observed. From the crossover behavior the values of the Ginzburg number and the exchange interaction length in Ga1-xMnxAs with different concentrations of Mn were determined.
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Submitted 4 August, 2011;
originally announced August 2011.
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Specific heat study of Ga1-xMnxAs
Authors:
Sh. U. Yuldashev,
Kh. T. Igamberdiev,
Sejoon Lee,
Y. H. Kwon,
T. W. Kang,
Yongmin Kim,
Hyunsik Im,
A. G. Shashkov
Abstract:
Specific heat measurements were used to study the magnetic phase transition in Ga1-xMnxAs. Two different types of Ga1-xMnxAs samples have been investigated. The sample with a Mn concentration of 1.6% shows insulating behavior, and the sample with a Mn concentration of 2.6% is metallic. The temperature dependence of the specific heat for both samples reveals a pronounced lambda-shaped peak near the…
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Specific heat measurements were used to study the magnetic phase transition in Ga1-xMnxAs. Two different types of Ga1-xMnxAs samples have been investigated. The sample with a Mn concentration of 1.6% shows insulating behavior, and the sample with a Mn concentration of 2.6% is metallic. The temperature dependence of the specific heat for both samples reveals a pronounced lambda-shaped peak near the Curie temperature, which indicates a second-order phase transition in these samples. The critical behavior of the specific heat for Ga1-xMnxAs samples is consistent with the mean-field behavior with Gaussian fluctuations of the magnetization in the close vicinity of TC.
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Submitted 5 June, 2010;
originally announced June 2010.
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X-ray magnetic circular dichroism characterization of GaN/Ga1-xMnxN digital ferromagnetic heterostructure
Authors:
J. I. Hwang,
M. Kobayashi,
G. S. Song,
A. Fujimori,
A. Tanaka,
Z. S. Yang,
H. J. Lin,
D. J. Huang,
C. T. Chen,
H. C. Jeon,
T. W. Kang
Abstract:
We have investigated the magnetic properties of a GaN/Ga1-xMnxN (x = 0.1) digital ferromagnetic heterostructure (DFH) showing ferromagnetic behavior using soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). The Mn L2,3-edge XAS spectra were similar to those of Ga1-xMnxN random alloy thin films, indicating a substitutional doping of high concentration Mn into Ga…
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We have investigated the magnetic properties of a GaN/Ga1-xMnxN (x = 0.1) digital ferromagnetic heterostructure (DFH) showing ferromagnetic behavior using soft x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). The Mn L2,3-edge XAS spectra were similar to those of Ga1-xMnxN random alloy thin films, indicating a substitutional doping of high concentration Mn into GaN. From the XMCD measurements, it was revealed that paramagnetic and ferromagnetic Mn atoms coexisted in the Ga1-xMnxN digital layers. The ferromagnetic moment per Mn atom estimated from XMCD agreed well with that estimated from SQUID measurements. From these results, we conclude that the ferromagnetic behavior of the GaN/Ga1-xMnxN DFH sample arises only from substitutional Mn2+ ions in the Ga1-xMnxN digital layers and not from ferromagnetic precipitates. Subtle differences were also found from the XMCD spectra between the electronic states of the ferromagnetic and paramagnetic Mn2+ ions.
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Submitted 25 March, 2007; v1 submitted 19 March, 2007;
originally announced March 2007.
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Nova V4743 Sagittarii 2002: An Intermediate Polar Candidate
Authors:
Tae W. Kang,
Alon Retter,
Alex Liu,
Mercedes Richards
Abstract:
We present the results of 11 nights of CCD unfiltered photometry of V4743 Sgr (Nova Sgr 2002 # 3) from 2003 and 2005. We find two periods of 0.2799 d ~ 6.7 h and 0.01642 d ~ 24 min in the 2005 data. The long period is also present in the 2003 data, but only weak evidence of the shorter period is found in this year. The 24-min period is somewhat longer than the 22-min period, which was detected f…
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We present the results of 11 nights of CCD unfiltered photometry of V4743 Sgr (Nova Sgr 2002 # 3) from 2003 and 2005. We find two periods of 0.2799 d ~ 6.7 h and 0.01642 d ~ 24 min in the 2005 data. The long period is also present in the 2003 data, but only weak evidence of the shorter period is found in this year. The 24-min period is somewhat longer than the 22-min period, which was detected from X-ray observations. We suggest that the 6.7-h periodicity represents the orbital period of the underlying binary system and that the 24-min period is the beat periodicity between the orbital period and the X-ray period, which is presumably the spin period of the white dwarf. Thus, V4743 Sgr should be classified as an intermediate polar (DQ Her star). About six months after the nova outburst, the optical light curve of V4743 Sgr seemed to show quasi-periodic oscillations, which are typical of the transient phase in classical nova. Therefore, our results support the previous suggestion that the trans ition phase in novae may be related to intermediate polars.
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Submitted 20 April, 2006;
originally announced April 2006.
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Modulation of the Curie Temperature in Ferromagnetic/Ferroelectric Hybrid Double Quantum Wells
Authors:
N. Kim,
H. Kim,
J. W. Kim,
S. J. Lee,
T. W. Kang
Abstract:
We propose a ferromagnetic/ferroelectric hybrid double quantum well structure, and present an investigation of the Curie temperature (Tc) modulation in this quantum structure. The combined effects of applied electric fields and spontaneous electric polarization are considered for a system that consists of a Mn δ-doped well, a barrier, and a p-type ferroelectric well. We calculate the change in t…
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We propose a ferromagnetic/ferroelectric hybrid double quantum well structure, and present an investigation of the Curie temperature (Tc) modulation in this quantum structure. The combined effects of applied electric fields and spontaneous electric polarization are considered for a system that consists of a Mn δ-doped well, a barrier, and a p-type ferroelectric well. We calculate the change in the envelope functions of carriers at the lowest energy sub-band, resulting from applied electric fields and switching the dipole polarization. By reversing the depolarizing field, we can achieve two different ferromagnetic transition temperatures of the ferromagnetic quantum well in a fixed applied electric field. The Curie temperature strongly depends on the position of the Mn δ-doped layer and the polarization strength of the ferroelectric well.
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Submitted 16 January, 2006; v1 submitted 8 December, 2005;
originally announced December 2005.
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Detection of orbital and superhump periods in Nova V2574 Ophiuchi (2004)
Authors:
Tae W. Kang,
Alon Retter,
Alex Liu,
Mercedes Richards
Abstract:
We present the results of 37 nights of CCD unfiltered photometry of nova V2574 Oph (2004) from 2004 and 2005. We find two periods of 0.14164 d (~3.40 h) and 0.14773 d (~3.55 h) in the 2005 data. The 2004 data show variability on a similar timescale, but no coherent periodicity was found. We suggest that the longer periodicity is the orbital period of the underlying binary system and that the sho…
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We present the results of 37 nights of CCD unfiltered photometry of nova V2574 Oph (2004) from 2004 and 2005. We find two periods of 0.14164 d (~3.40 h) and 0.14773 d (~3.55 h) in the 2005 data. The 2004 data show variability on a similar timescale, but no coherent periodicity was found. We suggest that the longer periodicity is the orbital period of the underlying binary system and that the shorter period represents a negative superhump. The 3.40 h period is about 4% shorter than the orbital period and obeys the relation between superhump period deficit and binary period. The detection of superhumps in the light curve is evidence of the presence of a precessing accretion disk in this binary system shortly after the nova outburst. From the maximum magnitude - rate of decline relation, we estimate the decay rate t_2 = 17+/-4 d and a maximum absolute visual magnitude of M_Vmax = -7.7+/-1.7 mag.
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Submitted 22 December, 2005; v1 submitted 19 December, 2005;
originally announced December 2005.
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Equations for filling factor estimation in opal matrix
Authors:
S. M. Abrarov,
T. W. Kim,
T. W. Kang
Abstract:
We consider two equations for the filling factor estimation of infiltrated zinc oxide (ZnO) in silica (SiO_2) opal and gallium nitride in ZnO opal. The first equation is based on the effective medium approximation, while the second one - on Maxwell-Garnett approximation. The comparison between two filling factors shows that both equations can be equally used for the estimation of the quantity of…
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We consider two equations for the filling factor estimation of infiltrated zinc oxide (ZnO) in silica (SiO_2) opal and gallium nitride in ZnO opal. The first equation is based on the effective medium approximation, while the second one - on Maxwell-Garnett approximation. The comparison between two filling factors shows that both equations can be equally used for the estimation of the quantity of infiltrated nanocrystals inside opal matrix.
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Submitted 25 October, 2005; v1 submitted 25 October, 2005;
originally announced October 2005.
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Deep level emission of ZnO nanoparticles deposited inside UV opal
Authors:
S. M. Abrarov,
Sh. U. Yuldashev,
T. W. Kim,
Y. H. Kwon,
T. W. Kang
Abstract:
The temperature-dependent photoluminescence (PL) spectra of zinc oxide (ZnO) nanocrystals deposited inside the ultraviolet (UV) opal were studied. ZnO was grown in the voids between FCC packed silicon dioxide spheres using spray pyrolysis under ultrasonic vibration in the solution containing a zinc nitrate precursor. The ZnO nanoparticles inside opal matrix with UV photonic band-gap exhibit supp…
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The temperature-dependent photoluminescence (PL) spectra of zinc oxide (ZnO) nanocrystals deposited inside the ultraviolet (UV) opal were studied. ZnO was grown in the voids between FCC packed silicon dioxide spheres using spray pyrolysis under ultrasonic vibration in the solution containing a zinc nitrate precursor. The ZnO nanoparticles inside opal matrix with UV photonic band-gap exhibit suppression of the excitonic emission and enhancement of the deep level emission. Suppression of the excitonic lines is due to the inhibition of spontaneous emission, while enhancement and broadening of the DL emission in the green spectral region is due to Purcell effect. The infiltration of ZnO inside the photonic crystal may be a useful technique to increase its emission efficiency in the selected spectral region.
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Submitted 21 August, 2005;
originally announced August 2005.
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Metastability from Photoluminescence of n-type GaN
Authors:
C. S. Park,
T. W. Kang
Abstract:
We measured the temperature dependence of photoluminescence involved with the metastability of unintentionally doped GaN. Reaction energy U of donor atom is 0.1eV and shallow donor is more stable than deep center. The impurity transition was applied to unintentionally doped GaN at low temperature and reaction energy U was provided for shallow-deep transition. We propose that the origin of DX cen…
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We measured the temperature dependence of photoluminescence involved with the metastability of unintentionally doped GaN. Reaction energy U of donor atom is 0.1eV and shallow donor is more stable than deep center. The impurity transition was applied to unintentionally doped GaN at low temperature and reaction energy U was provided for shallow-deep transition. We propose that the origin of DX center in unintentionally doped wurtize GaN is considered to be an oxygen impurity instead of silicon.
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Submitted 20 July, 2005; v1 submitted 9 November, 2004;
originally announced November 2004.
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Anomalous Hall effect in insulating Ga1-xMnxAs
Authors:
Sh. U. Yuldashev,
H. C. Jeon,
H. S. Im,
T. W. Kang,
S. H. Lee,
J. K. Furdyna
Abstract:
We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x = 0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. W…
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We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x = 0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga1-xMnxAs eventually disappears, and paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in Ga1-xMnxAs (x = 0.085) has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma [Phys.Rev.Lett. 88, 247202 (2002)].
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Submitted 20 August, 2004;
originally announced August 2004.