Showing 1–21 of 21 results for author: Kapadia, R

Minimal Evidence Group Identification for Claim Verification

Authors: Xiangci Li, Sihao Chen, Rajvi Kapadia, Jessica Ouyang, Fan Zhang

Abstract: Claim verification in real-world settings (e.g. against a large collection of candidate evidences retrieved from the web) typically requires identifying and aggregating a complete set of evidence pieces that collectively provide full support to the claim. The problem becomes particularly challenging when there exists distinct sets of evidence that could be used to verify the claim from different p… ▽ More Claim verification in real-world settings (e.g. against a large collection of candidate evidences retrieved from the web) typically requires identifying and aggregating a complete set of evidence pieces that collectively provide full support to the claim. The problem becomes particularly challenging when there exists distinct sets of evidence that could be used to verify the claim from different perspectives. In this paper, we formally define and study the problem of identifying such minimal evidence groups (MEGs) for claim verification. We show that MEG identification can be reduced from Set Cover problem, based on entailment inference of whether a given evidence group provides full/partial support to a claim. Our proposed approach achieves 18.4% and 34.8% absolute improvements on the WiCE and SciFact datasets over LLM prompting. Finally, we demonstrate the benefits of MEGs in downstream applications such as claim generation. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Gecko: Versatile Text Embeddings Distilled from Large Language Models

Authors: Jinhyuk Lee, Zhuyun Dai, Xiaoqi Ren, Blair Chen, Daniel Cer, Jeremy R. Cole, Kai Hui, Michael Boratko, Rajvi Kapadia, Wen Ding, Yi Luan, Sai Meher Karthik Duddu, Gustavo Hernandez Abrego, Weiqiang Shi, Nithi Gupta, Aditya Kusupati, Prateek Jain, Siddhartha Reddy Jonnalagadda, Ming-Wei Chang, Iftekhar Naim

Abstract: We present Gecko, a compact and versatile text embedding model. Gecko achieves strong retrieval performance by leveraging a key idea: distilling knowledge from large language models (LLMs) into a retriever. Our two-step distillation process begins with generating diverse, synthetic paired data using an LLM. Next, we further refine the data quality by retrieving a set of candidate passages for each… ▽ More We present Gecko, a compact and versatile text embedding model. Gecko achieves strong retrieval performance by leveraging a key idea: distilling knowledge from large language models (LLMs) into a retriever. Our two-step distillation process begins with generating diverse, synthetic paired data using an LLM. Next, we further refine the data quality by retrieving a set of candidate passages for each query, and relabeling the positive and hard negative passages using the same LLM. The effectiveness of our approach is demonstrated by the compactness of the Gecko. On the Massive Text Embedding Benchmark (MTEB), Gecko with 256 embedding dimensions outperforms all existing entries with 768 embedding size. Gecko with 768 embedding dimensions achieves an average score of 66.31, competing with 7x larger models and 5x higher dimensional embeddings. △ Less

Submitted 29 March, 2024; originally announced March 2024.

Comments: 18 pages

Photoconductive Effects in Single Crystals of BaZrS$_3$

Authors: Boyang Zhao, Huandong Chen, Ragib Ahsan, Fei Hou, Eric R Hoglund, Shantanu Singh, Huan Zhao, Han Htoon, Andrey Krayev, Maruda Shanmugasundaram, Patrick E Hopkins, Jan Seidel, Rehan Kapadia, Jayakanth Ravichandran

Abstract: Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZr… ▽ More Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$. △ Less

Submitted 4 October, 2023; originally announced October 2023.

Carbon nanotube substrates enhance SARS-CoV-2 spike protein ion yields in matrix assisted laser desorption-ionization mass spectrometry

Authors: T. Schenkel, A. M. Snijders, K. Nakamura, P. A. Seidl, B. Mak, L. Obst-Huebl, H. Knobel, I. Pong, A. Persaud, J. van Tilborg, T. Ostermayr, S. Steinke, E. A. Blakely, Q. Ji, A. Javey, R. Kapadia, C. G. R. Geddes, E. Esarey

Abstract: Nanostructured surfaces enhance ion yields in matrix assisted laser desorption-ionization mass spectrometry (MALDI-MS). The spike protein complex, S1, is one fingerprint signature of Sars-CoV-2 with a mass of 75 kDa. Here, we show that MALDI-MS yields of Sars-CoV-2 spike protein ions in the 100 kDa range are enhanced 50-fold when the matrix-analyte solution is placed on substrates that are coated… ▽ More Nanostructured surfaces enhance ion yields in matrix assisted laser desorption-ionization mass spectrometry (MALDI-MS). The spike protein complex, S1, is one fingerprint signature of Sars-CoV-2 with a mass of 75 kDa. Here, we show that MALDI-MS yields of Sars-CoV-2 spike protein ions in the 100 kDa range are enhanced 50-fold when the matrix-analyte solution is placed on substrates that are coated with a dense forest of multi-walled carbon nanotubes, compared to yields from uncoated substrates. Nanostructured substrates can support the development of mass spectrometry techniques for sensitive pathogen detection and environmental monitoring. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Multifunctional photoresponsive organic molecule for electric field sensing and modulation

Authors: Yingmu Zhang, Jinghan He, Patrick J. G. Saris, Hyun Uk Chae, Subrata Das, Rehan Kapadia, Andrea M. Armani

Abstract: Organic molecules with nonlinear optical behavior have advanced a wide range of fields spanning from integrated photonics to biological imaging. With advances in microscopy, an emerging application is multifunctional nonlinear organic imaging agents. Unlike conventional imaging probes which simply emit light through single or multi photon processes, multifunctional materials allow systems to be si… ▽ More Organic molecules with nonlinear optical behavior have advanced a wide range of fields spanning from integrated photonics to biological imaging. With advances in microscopy, an emerging application is multifunctional nonlinear organic imaging agents. Unlike conventional imaging probes which simply emit light through single or multi photon processes, multifunctional materials allow systems to be simultaneously imaged and controlled. In this work, we report a multifunctional molecular probe for modulating and reporting electric fields. The probe molecule consists of two distinct functional modules which are connected by a long alkyl chain. The electric field detector module relies on the two-photon (2p) imaging agent and photo-induced electron transfer (PeT) dye, TPE. Two-photon imaging agents have demonstrated less damage and larger penetration depths in cells and live tissue imaging. The electric field modulator module relies on the organic photoconductor, NAI. To reduce cross-talk and optimize absorption and emission wavelengths, the molecular structure is first studied using density functional theory modeling, and then the multi-functional molecular probe is synthesized. The photophysical, photoconductivity, and biotoxicity of the probe molecule are studied in a range of solvents and solid state, and the results agree with the theoretical predictions. Specifically, 2p excitation in a biocompatible solvent is demonstrated, the photoconductivity is rapid and reversible, and the material has low cytotoxicity. Additionally, the entire system is optically controlled, including signal read-out, and the two modules can be operated simultaneously or individually. This work sets the stage for modulation and detection of bioelectric fields in a range of cell and tissue types. △ Less

Submitted 7 December, 2021; v1 submitted 14 April, 2021; originally announced April 2021.

Comments: main text and SI, 29 pages

Densities of minor-closed graph classes are rational

Authors: Rohan Kapadia, Sergey Norin

Abstract: For a graph class $\mathcal{F}$, let $ex_{\mathcal{F}}(n)$ denote the maximum number of edges in a graph in $\mathcal{F}$ on $n$ vertices. We show that for every proper minor-closed graph class $\mathcal{F}$ the function $ex_{\mathcal{F}}(n) - Δでるたn$ is eventually periodic, where $Δでるた= \lim_{n \to \infty} ex_{\mathcal{F}}(n)/n$ is the limiting density of $\mathcal{F}$. This confirms a special case of a… ▽ More For a graph class $\mathcal{F}$, let $ex_{\mathcal{F}}(n)$ denote the maximum number of edges in a graph in $\mathcal{F}$ on $n$ vertices. We show that for every proper minor-closed graph class $\mathcal{F}$ the function $ex_{\mathcal{F}}(n) - Δでるたn$ is eventually periodic, where $Δでるた= \lim_{n \to \infty} ex_{\mathcal{F}}(n)/n$ is the limiting density of $\mathcal{F}$. This confirms a special case of a conjecture by Geelen, Gerards and Whittle. In particular, the limiting density of every proper minor-closed graph class is rational, which answers a question of Eppstein. As a major step in the proof we show that every proper minor-closed graph class contains a subclass of bounded pathwidth with the same limiting density, confirming a conjecture of the second author. Finally, we investigate the set of limiting densities of classes of graphs closed under taking topological minors. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Asymptotic Density of Graphs Excluding Disconnected Minors

Authors: Rohan Kapadia, Sergey Norin, Yingjie Qian

Abstract: For a graph $H$, let $$c_{\infty}(H)= \lim_{n \to \infty}\max\frac{|E(G)|}{n},$$ where the maximum is taken over all graphs $G$ on $n$ vertices not containing $H$ as a minor. Thus $c_{\infty}(H)$ is the asymptotic maximum density of graphs not containing $H$ as a minor. Employing a structural lemma due to Eppstein, we prove new upper bounds on $c_{\infty}(H)$ for disconnected graphs $H$. In partic… ▽ More For a graph $H$, let $$c_{\infty}(H)= \lim_{n \to \infty}\max\frac{|E(G)|}{n},$$ where the maximum is taken over all graphs $G$ on $n$ vertices not containing $H$ as a minor. Thus $c_{\infty}(H)$ is the asymptotic maximum density of graphs not containing $H$ as a minor. Employing a structural lemma due to Eppstein, we prove new upper bounds on $c_{\infty}(H)$ for disconnected graphs $H$. In particular, we determine $c_{\infty}(H)$ whenever $H$ is union of cycles. Finally, we investigate the behaviour of $c_\infty(sK_r)$ for fixed $r$, where $sK_r$ denotes the union of $s$ disjoint copies of the complete graph on $r$ vertices. Improving on a result of Thomason, we show that $$c_\infty(sK_r)=s(r-1)-1 \mathrm{\; for \;} s =Ωおめが\left(\frac{\log{r}}{\log\log{r}}\right),$$ and $$c_\infty(sK_r)>s(r-1)-1 \mathrm{\; for \;} s ={o}\left(\frac{\log{r}}{\log\log{r}}\right).$$ △ Less

Submitted 9 March, 2019; originally announced March 2019.

Ideal Bandgap in a 2D Ruddlesden-Popper Perovskite Chalcogenide for Single-junction Solar Cells

Authors: Shanyuan Niu, Debarghya Sarkar, Kristopher Williams, Yucheng Zhou, Yuwei Li, Elisabeth Bianco, Huaixun Huyan, Stephen B. Cronin, Michael E. McConney, Ralf Haiges, R. Jaramillo, David J. Singh, William A. Tisdale, Rehan Kapadia, Jayakanth Ravichandran

Abstract: Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical stu… ▽ More Transition metal perovskite chalcogenides (TMPCs) are explored as stable, environmentally friendly semiconductors for solar energy conversion. They can be viewed as the inorganic alternatives to hybrid halide perovskites, and chalcogenide counterparts of perovskite oxides with desirable optoelectronic properties in the visible and infrared part of the electromagnetic spectrum. Past theoretical studies have predicted large absorption coefficient, desirable defect characteristics, and bulk photovoltaic effect in TMPCs. Despite recent progresses in polycrystalline synthesis and measurements of their optical properties, it is necessary to grow these materials in high crystalline quality to develop a fundamental understanding of their optical properties and evaluate their suitability for photovoltaic application. Here, we report the growth of single crystals of a two-dimensional (2D) perovskite chalcogenide, Ba3Zr2S7, with a natural superlattice-like structure of alternating double-layer perovskite blocks and single-layer rock salt structure. The material demonstrated a bright photoluminescence peak at 1.28 eV with a large external luminescence efficiency of up to 0.15%. We performed time-resolved photoluminescence spectroscopy on these crystals and obtained an effective recombination time of ~65 ns. These results clearly show that 2D Ruddlesden-Popper phases of perovskite chalcogenides are promising materials to achieve single-junction solar cells. △ Less

Submitted 25 June, 2018; originally announced June 2018.

Comments: 4 Figures

Journal ref: Chem. Mater. 2018, 30, 15, 4882-4886

Band-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides

Authors: Shanyuan Niu, Huaixun Huyan, Yang Liu, Matthew Yeung, Kevin Ye, Louis Blankemeier, Thomas Orvis, Debarghya Sarkar, David J. Singh, Rehan Kapadia, Jayakanth Ravichandran

Abstract: Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which… ▽ More Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which are appropriate for optoelectronic applications, especially solar energy conversion. Despite several promising theoretical predictions, very little experimental studies on their physical properties are currently available, especially optical properties. We report a new synthetic route towards high quality bulk ceramic TMPCs and systematic study of three phases, SrZrS3 in two different room temperature stabilized phases and one of BaZrS3. All three materials were synthesized with a catalyzed solid-state reaction process in sealed ampoules. Structural and chemical characterizations establish high quality of the samples, which is confirmed by the intense room temperature photoluminescence (PL) spectra showing direct band gaps around 1.53eV, 2.13eV and 1.81eV respectively. The potential of these materials for solar energy conversion was evaluated by measurement of PL quantum efficiency and estimate of quasi Fermi level splitting. △ Less

Submitted 25 April, 2018; originally announced April 2018.

Comments: 4 figures

Journal ref: Advanced Materials 2017, 29, 1604733

Computing girth and cogirth in perturbed graphic matroids

Authors: Jim Geelen, Rohan Kapadia

Abstract: We give polynomial-time randomized algorithms for computing the girth and the cogirth of binary matroids that are low-rank perturbations of graphic matroids. We give polynomial-time randomized algorithms for computing the girth and the cogirth of binary matroids that are low-rank perturbations of graphic matroids. △ Less

Submitted 13 October, 2015; v1 submitted 28 April, 2015; originally announced April 2015.

Comments: 24 pages, no figures

MSC Class: 05B35 (Primary); 94B05; 90C27 (Secondary)

The extremal functions of classes of matroids of bounded branch-width

Authors: Rohan Kapadia

Abstract: For a set of matroids $\mathcal{M}$, let $ex_\mathcal{M}(n)$ be the maximum size of a simple rank-$n$ matroid in $\mathcal{M}$. We prove that, for any finite field $\mathbb{F}$, if $\mathcal{M}$ is a minor-closed class of $\mathbb{F}$-representable matroids of bounded branch-width, then $\lim_{n \rightarrow \infty} ex_\mathcal{M}(n) / n$ exists and is a rational number, $Δでるた$. We also show that… ▽ More For a set of matroids $\mathcal{M}$, let $ex_\mathcal{M}(n)$ be the maximum size of a simple rank-$n$ matroid in $\mathcal{M}$. We prove that, for any finite field $\mathbb{F}$, if $\mathcal{M}$ is a minor-closed class of $\mathbb{F}$-representable matroids of bounded branch-width, then $\lim_{n \rightarrow \infty} ex_\mathcal{M}(n) / n$ exists and is a rational number, $Δでるた$. We also show that $ex_\mathcal{M}(n) - Δでるたn$ is periodic when $n$ is sufficiently large and that $ex_\mathcal{M}$ is achieved by a subclass of $\mathcal{M}$ of bounded path-width. △ Less

Submitted 24 January, 2016; v1 submitted 26 March, 2015; originally announced March 2015.

Comments: 25 pages, no figures

MSC Class: 05B35

Lines, betweenness and metric spaces

Authors: Pierre Aboulker, Xiaomin Chen, Guangda Huzhang, Rohan Kapadia, Cathryn Supko

Abstract: A classic theorem of Euclidean geometry asserts that any noncollinear set of $n$ points in the plane determines at least $n$ distinct lines. Chen and Chvátal conjectured that this holds for an arbitrary finite metric space, with a certain natural definition of lines in a metric space. We prove that in any metric space with $n$ points, either there is a line containing all the points or there are… ▽ More A classic theorem of Euclidean geometry asserts that any noncollinear set of $n$ points in the plane determines at least $n$ distinct lines. Chen and Chvátal conjectured that this holds for an arbitrary finite metric space, with a certain natural definition of lines in a metric space. We prove that in any metric space with $n$ points, either there is a line containing all the points or there are at least $Ωおめが(\sqrt{n})$ lines. This is the first polynomial lower bound on the number of lines in general finite metric spaces. In the more general setting of pseudometric betweenness, we prove a corresponding bound of $Ωおめが(n^{2/5})$ lines. When the metric space is induced by a connected graph, we prove that either there is a line containing all the points or there are $Ωおめが(n^{4/7})$ lines, improving the previous $Ωおめが(n^{2/7})$ bound. We also prove that the number of lines in an $n$-point metric space is at least $n / 5w$, where $w$ is the number of different distances in the space, and we give an $Ωおめが(n^{4/3})$ lower bound on the number of lines in metric spaces induced by graphs with constant diameter, as well as spaces where all the positive distances are from \{1, 2, 3\}. △ Less

Submitted 29 December, 2014; originally announced December 2014.

Comments: 20 pages

MSC Class: 05B99

MoS2 P-type Transistors and Diodes Enabled by High Workfunction MoOx Contacts

Authors: Steven Chuang, Corsin Battaglia, Angelica Azcatl, Stephen McDonnell, Jeong Seuk Kang, Xingtian Yin, Mahmut Tosun, Rehan Kapadia, Hui Fang, Robert M. Wallace, Ali Javey

Abstract: The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of M… ▽ More The development of low-resistance source/drain contacts to transition metal dichalcogenides (TMDCs) is crucial for the realization of high-performance logic components. In particular, efficient hole contacts are required for the fabrication of p-type transistors with MoS2, a model TMDC. Previous studies have shown that the Fermi level of elemental metals is pinned close to the conduction band of MoS2, thus resulting in large Schottky barrier heights for holes with limited hole injection from the contacts. Here, we show that substoichiometric molybdenum trioxide (MoOx, x<3), a high workfunction material, acts as an efficient hole injection layer to MoS2 and WSe2. In particular, we demonstrate MoS2 p-type field-effect transistors and diodes by using MoOx contacts. We also show drastic on-current improvement for p-type WSe2 FETs with MoOx contacts over devices made with Pd contacts, which is the prototypical metal used for hole injection. The work presents an important advance in contact engineering of TMDCs and will enable future exploration of their performance limits and intrinsic transport properties. △ Less

Submitted 26 February, 2014; originally announced February 2014.

The Chen-Chvátal conjecture for metric spaces induced by distance-hereditary graphs

Authors: Pierre Aboulker, Rohan Kapadia

Abstract: A special case of a theorem of De Bruijn and Erdős asserts that any noncollinear set of $n$ points in the plane determines at least $n$ distinct lines. Chen and Chvátal conjectured a generalization of this result to arbitrary finite metric spaces, with a particular definition of lines in a metric space. We prove it for metric spaces induced by connected distance-hereditary graphs -- a graph $G$ is… ▽ More A special case of a theorem of De Bruijn and Erdős asserts that any noncollinear set of $n$ points in the plane determines at least $n$ distinct lines. Chen and Chvátal conjectured a generalization of this result to arbitrary finite metric spaces, with a particular definition of lines in a metric space. We prove it for metric spaces induced by connected distance-hereditary graphs -- a graph $G$ is called distance-hereditary if the distance between two vertices $u$ and $v$ in any connected induced subgraph $H$ of $G$ is equal to the distance between $u$ and $v$ in $G$. △ Less

Submitted 5 July, 2014; v1 submitted 9 December, 2013; originally announced December 2013.

Comments: 11 pages, 0 figures

MSC Class: 05C99; 05D99; 51G99

Journal ref: European J. Combin. 43 (2015), 1-7

Matroids with a modular 4-point line

Authors: Rohan Kapadia

Abstract: A result of Seymour implies that any 3-connected matroid with a modular 3-point line is binary. We prove a similar characterization for 3-connected matroids with modular 4-point lines. We show that such a matroid is either representable over GF(3) or GF(4) or has an $F_7$-minor and either an $(F_7^-)$- or $(F_7^-)^*$-minor. A result of Seymour implies that any 3-connected matroid with a modular 3-point line is binary. We prove a similar characterization for 3-connected matroids with modular 4-point lines. We show that such a matroid is either representable over GF(3) or GF(4) or has an $F_7$-minor and either an $(F_7^-)$- or $(F_7^-)^*$-minor. △ Less

Submitted 24 March, 2014; v1 submitted 20 September, 2013; originally announced September 2013.

Comments: 26 pages

MSC Class: 05B35

Journal ref: SIAM J. Discrete Math. 28 (2014), 862-877

Representability of matroids with a large projective geometry minor

Authors: Jim Geelen, Rohan Kapadia

Abstract: We prove that for each prime power $q$ there is an integer $n$ such that if $M$ is a $3$-connected, representable matroid with a PG$(n-1,q)$-minor and no $U_{2,q^2+1}$-minor, then $M$ is representable over GF$(q)$. We also show that for $\ell >= 2$, if $M$ is a $3$-connected, representable matroid of sufficiently high rank with no $U_{2,\ell+2}$-minor and $|E(M)| \geq (4\ell)^{r(M)/2}$, then $M$ i… ▽ More We prove that for each prime power $q$ there is an integer $n$ such that if $M$ is a $3$-connected, representable matroid with a PG$(n-1,q)$-minor and no $U_{2,q^2+1}$-minor, then $M$ is representable over GF$(q)$. We also show that for $\ell >= 2$, if $M$ is a $3$-connected, representable matroid of sufficiently high rank with no $U_{2,\ell+2}$-minor and $|E(M)| \geq (4\ell)^{r(M)/2}$, then $M$ is representable over a field of order at most $\ell$. △ Less

Submitted 29 March, 2015; v1 submitted 23 April, 2013; originally announced April 2013.

Comments: 10 pages

MSC Class: 05B35

Journal ref: J. Combin. Theory Ser. B 112 (2015), 154-161

Representation of matroids with a modular plane

Authors: Jim Geelen, Rohan Kapadia

Abstract: We prove that if M is a vertically 4-connected matroid with a modular flat X of rank at least three, then every representation of M | X over a finite field F extends to a unique F-representation of M. A corollary is that when F has order q, any vertically 4-connected matroid with a PG(2, F)-restriction is either F-representable or has a U_{2, q^2+1}-minor. We also show that no excluded minor for t… ▽ More We prove that if M is a vertically 4-connected matroid with a modular flat X of rank at least three, then every representation of M | X over a finite field F extends to a unique F-representation of M. A corollary is that when F has order q, any vertically 4-connected matroid with a PG(2, F)-restriction is either F-representable or has a U_{2, q^2+1}-minor. We also show that no excluded minor for the class of F-representable matroids has a PG(2, F)-restriction. △ Less

Submitted 23 April, 2013; originally announced April 2013.

Comments: 59 pages. Submitted

MSC Class: 05B35

Observation of degenerate one-dimensional sub-bands in cylindrical InAs nanowires

Authors: Alexandra C. Ford, S. Bala Kumar, Rehan Kapadia, Jing Guo, Ali Javey

Abstract: One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to struc… ▽ More One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The two-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors. △ Less

Submitted 3 February, 2012; originally announced February 2012.

Comments: 20 pages, 5 figures, supporting information included

Journal ref: Nano Letters 2012 ASAP

Highly Quantum-Confined InAs Nanoscale Membranes

Authors: Kuniharu Takei, Hui Fang, Bala Kumar, Rehan Kapadia, Qun Gao, Morten Madsen, Ha Sul Kim, Chin-Hung Liu, Elena Plis, Sanjay Krishna, Hans A. Bechtel, Jing Guo, Ali Javey

Abstract: Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the qu… ▽ More Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied thicknesses of 5-50 nm. First, optical absorption studies are performed by transferring InAs "quantum membranes" (QMs) onto transparent substrates, from which the quantized sub-bands are directly visualized. These sub-bands determine the contact resistance of the system with the experimental values consistent with the expected number of quantum transport modes available for a given thickness. Finally, the effective electron mobility of InAs QMs is shown to exhibit anomalous field- and thickness-dependences that are in distinct contrast to the conventional MOSFET models, arising from the strong quantum confinement of carriers. The results provide an important advance towards establishing the fundamental device physics of 2-D semiconductors. △ Less

Submitted 13 September, 2011; originally announced September 2011.

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Authors: Hyunhyub Ko, Kuniharu Takei, Rehan Kapadia, Steven Chuang, Hui Fang, Paul W. Leu, Kartik Ganapathi, Elena Plis, Ha Sul Kim, Szu-Ying Chen, Morten Madsen, Alexandra C. Ford, Yu-Lun Chueh, Sanjay Krishna, Sayeef Salahuddin, Ali Javey

Abstract: Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established… ▽ More Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/μみゅーm at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 μみゅーm. △ Less

Submitted 4 August, 2011; originally announced August 2011.

Journal ref: Nature, Vol. 468, p.286, 2010

Development of a Compact Neutron Source based on Field Ionization Processes

Authors: Arun Persaud, Ian Allen, Michael R. Dickinson, Rehan Kapadia, Kuniharu Takei, and Ali Javey, Thomas Schenkel

Abstract: The authors report on the use of carbon nanofiber nanoemitters to ionize deuterium atoms for the generation of neutrons in a deuterium-deuterium reaction in a preloaded target. Acceleration voltages in the range of 50-80 kV are used. Field emission of electrons is investigated to characterize the emitters. The experimental setup and sample preparation are described and first data of neutron produc… ▽ More The authors report on the use of carbon nanofiber nanoemitters to ionize deuterium atoms for the generation of neutrons in a deuterium-deuterium reaction in a preloaded target. Acceleration voltages in the range of 50-80 kV are used. Field emission of electrons is investigated to characterize the emitters. The experimental setup and sample preparation are described and first data of neutron production are presented. Ongoing experiments to increase neutron production yields by optimizing the field emitter geometry and surface conditions are discussed. △ Less

Submitted 20 January, 2011; v1 submitted 11 October, 2010; originally announced October 2010.

Comments: 4 pages, 5 figures; IVNC 2010

Journal ref: J.Vac.Sci.Technol.B Microelectron.Nanometer Struct.29:02B107,2011