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The emergence of interface states in graphene/transition metal dichalcogenides heterostructure with lateral interface
Authors:
Zahra Khatibi,
Stephen R. Power
Abstract:
The relative strength of different proximity spin-orbit couplings in graphene on transition metal dichalcogenides (TMDC) can be tuned via the metal composition in the TMDC layer. While Gr/MoSe$_2$, has a normal gap, proximity to WSe$_2$ instead leads to valley-Zeeman-driven inverted bands. Although the $\mathbb{Z}_2$ index vanishes, these systems enable a concentration-dependent topological crosso…
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The relative strength of different proximity spin-orbit couplings in graphene on transition metal dichalcogenides (TMDC) can be tuned via the metal composition in the TMDC layer. While Gr/MoSe$_2$, has a normal gap, proximity to WSe$_2$ instead leads to valley-Zeeman-driven inverted bands. Although the $\mathbb{Z}_2$ index vanishes, these systems enable a concentration-dependent topological crossover with band gap closure when graphene is stacked on a composite or alloyed TMDC layer. This is due to a nonzero Berry curvature at the individual valleys and a change of the valley Chern index at a critical composition ratio. Therefore, inherently, we also expect that stacked heterostructures of graphene on composite TMDC layers should host localised boundary modes due to the presence of Gr/WSe$_2$- and Gr/MoSe$_2$-like domains with opposite valley Chern indices. In this study, we show that a Gr/(Mo-W)Se$_2$ heterostructure with a lateral interface in the TMDC layer can indeed host topologically protected in-gap propagating modes, similar to those at the border of commensurate AB and BA domains in biased minimally-twisted bilayer graphene. However, the stability of these modes depends crucially on the system size. We demonstrate that the electronic behaviour of Gr/(Mo-W)Se$_2$ heterostructures evolves from a homogeneous effective medium to a superposition of domain-localised bands and zero-energy branch crossings as the domain size in the alloyed TMDC layer is increased.
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Submitted 12 April, 2023;
originally announced April 2023.
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Proximity spin-orbit coupling in graphene on alloyed transition metal dichalcogenides
Authors:
Zahra Khatibi,
Stephen R. Power
Abstract:
The negligible intrinsic spin-orbit coupling (SOC) in graphene can be enhanced by proximity effects in stacked heterostructures of graphene and transition metal dichalcogenides (TMDCs). The composition of the TMDC layer plays a key role in determining the nature and strength of the resultant SOC induced in the graphene layer. Here, we study the evolution of the proximity-induced SOC as the TMDC la…
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The negligible intrinsic spin-orbit coupling (SOC) in graphene can be enhanced by proximity effects in stacked heterostructures of graphene and transition metal dichalcogenides (TMDCs). The composition of the TMDC layer plays a key role in determining the nature and strength of the resultant SOC induced in the graphene layer. Here, we study the evolution of the proximity-induced SOC as the TMDC layer is deliberately defected. Alloyed ${\rm G/W_χMo_{1-χ}Se_2}$ heterostructures with diverse compositions ($χ$) and defect distributions are simulated using density functional theory. Comparison with continuum and tight-binding models allows both local and global signatures of the metal-atom alloying to be clarified. Our findings show that, despite some dramatic perturbation of local parameters for individual defects, the low-energy spin and electronic behaviour follow a simple effective medium model which depends only on the composition ratio of the metallic species in the TMDC layer. Furthermore, we demonstrate that the topological state of such alloyed systems can be feasibly tuned by controlling this ratio.
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Submitted 30 June, 2022;
originally announced June 2022.
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Excitonic insulator phase and dynamics of condensate in a topological one-dimensional model
Authors:
Zahra Khatibi,
Roya Ahemeh,
Mehdi Kargarian
Abstract:
We employ mean-field approximation to investigate the interplay between the nontrivial band topology and the formation of excitonic insulator (EI) in a one-dimensional chain of atomic $s-p$ orbitals in the presence of repulsive inter-orbital Coulomb interaction. We find that our model, in a non-interacting regime, admits topological and trivial insulator phases, whereas, in strong Coulomb interact…
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We employ mean-field approximation to investigate the interplay between the nontrivial band topology and the formation of excitonic insulator (EI) in a one-dimensional chain of atomic $s-p$ orbitals in the presence of repulsive inter-orbital Coulomb interaction. We find that our model, in a non-interacting regime, admits topological and trivial insulator phases, whereas, in strong Coulomb interaction limit, the chiral symmetry is broken and the system undergoes a topological-excitonic insulator phase transition. The latter phase transition stems from an orbital pseudomagnetization and band inversion around $k=0$. Our findings show that contrary to the topological insulator phase, electron-hole bound states do not form exciton condensate in the trivial band insulator phase due to lack of band inversion. Interestingly, the EI phase in low $s-p$ hybridization limit hosts a Bardeen-Cooper-Schrieffer (BCS)/Bose-Einstein condensation (BEC) crossover. Irradiated by a pump pulse, our findings reveal that the oscillations of exciton states strongly depend on the frequency of the laser pulse. We further explore the signatures of dynamics of the exciton condensate in optical measurements.
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Submitted 5 November, 2020; v1 submitted 3 July, 2020;
originally announced July 2020.
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Strain impacts on commensurate bilayer graphene superlattices: distorted trigonal warping, emergence of bandgap and direct-indirect bandgap transition
Authors:
Zahra Khatibi,
Afshin Namiranian,
Fariborz Parhizgar
Abstract:
Due to low dimensionality, the controlled stacking of the graphene films and their electronic properties are susceptible to environmental changes including strain. The strain-induced modification of the electronic properties such as the emergence and modulation of bandgaps crucially depends on the stacking of the graphene films. However, to date, only the impact of strain on electronic properties…
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Due to low dimensionality, the controlled stacking of the graphene films and their electronic properties are susceptible to environmental changes including strain. The strain-induced modification of the electronic properties such as the emergence and modulation of bandgaps crucially depends on the stacking of the graphene films. However, to date, only the impact of strain on electronic properties of Bernal and AA-stacked bilayer graphene has been extensively investigated in theoretical studies. Exploiting density functional theory and tight-binding calculation, we investigate the impacts of in-plane strain on two different class of commensurate twisted bilayer graphene (TBG) which are even/odd under sublattice exchange (SE) parity. We find that the SE odd TBG remains gapless whereas the bandgap increases for the SE even TBG when applying equibiaxial tensile strain. Moreover, we observe that for extremely large mixed strains both investigated TBG superstructures demonstrate direct-indirect bandgap transition.
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Submitted 23 September, 2018;
originally announced September 2018.
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Impacts of in-plane strain on commensurate graphene/hexagonal boron nitride superlattices
Authors:
Zahra Khatibi,
Afshin Namiranian,
S. F. K. S. Panahi
Abstract:
Due to atomically thin structure, graphene/hexagonal boron nitride (G/hBN) heterostructures are intensively sensitive to the external mechanical forces and deformations being applied to their lattice structure. In particular, strain can lead to the modification of the electronic properties of G/hBN. Furthermore, moiré structures driven by misalignment of graphene and hBN layers introduce new featu…
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Due to atomically thin structure, graphene/hexagonal boron nitride (G/hBN) heterostructures are intensively sensitive to the external mechanical forces and deformations being applied to their lattice structure. In particular, strain can lead to the modification of the electronic properties of G/hBN. Furthermore, moiré structures driven by misalignment of graphene and hBN layers introduce new features to the electronic behavior of G/hBN. Utilizing {\it ab initio} calculation, we study the strain-induced modification of the electronic properties of diverse stacking faults of G/hBN when applying in-plane strain on both layers, simultaneously. We observe that the interplay of few percent magnitude in-plane strain and moiré pattern in the experimentally applicable systems leads to considerable valley drifts, band gap modulation and enhancement of the substrate-induced Fermi velocity renormalization. Furthermore, we find that regardless of the strain alignment, the zigzag direction becomes more efficient for electronic transport, when applying in-plane non-equibiaxial strains.
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Submitted 30 November, 2018; v1 submitted 8 July, 2018;
originally announced July 2018.
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Dark-exciton based strain sensing in transition metal dichalcogenides
Authors:
Maja Feierabend,
Zahra Khatibi,
Gunnar Berghäuser,
Ermin Malic
Abstract:
The trend towards ever smaller high-performance devices in modern technology requires novel materials with new functionalities. The recent emergence of atomically thin two-dimensional (2D) materials has opened up possibilities for the design of ultra-thin and flexible nanoelectronic devices. As truly 2D materials, they exhibit an optimal surface-to-volume ratio, which results in an extremely high…
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The trend towards ever smaller high-performance devices in modern technology requires novel materials with new functionalities. The recent emergence of atomically thin two-dimensional (2D) materials has opened up possibilities for the design of ultra-thin and flexible nanoelectronic devices. As truly 2D materials, they exhibit an optimal surface-to-volume ratio, which results in an extremely high sensitivity to external changes. This makes these materials optimal candidates for sensing applications. Here, we exploit the remarkably diverse exciton landscape in monolayer transition metal dichalcogenides to propose a novel dark-exciton-based concept for ultra sensitive strain sensors. We demonstrate that the dark-bright-exciton separation can be controlled by strain, which has a crucial impact on the activation of dark excitonic states. This results in a pronounced intensity change of dark excitons in photoluminescence spectra, when only 0.05 $\%$ strain is applied. The predicted extremely high optical gauge factors of up to 8000 are promising for the design of optical strain sensors.
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Submitted 19 June, 2018;
originally announced June 2018.
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Impact of strain on the excitonic linewidth in transition metal dichalcogenides
Authors:
Zahra Khatibi,
Maja Feierabend,
Malte Selig,
Samuel Brem,
Christopher Linderälv,
Paul Erhart,
Ermin Malic
Abstract:
Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by…
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Monolayer transition metal dichalcogenides (TMDs) are known to be highly sensitive to externally applied tensile or compressive strain. In particular, strain can be exploited as a tool to control the optical response of TMDs. However, the role of excitonic effects under strain has not been fully understood yet. Utilizing the strain-induced modification of electron and phonon dispersion obtained by first principle calculations, we present in this work microscopic insights into the strain-dependent optical response of various TMD materials. In particular, we explain recent experiments on the change of excitonic linewidths in strained TMDs and predict their behavior for tensile and compressive strain at low temperatures.
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Submitted 19 June, 2018;
originally announced June 2018.
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Valley polarized transport in strained graphene based Corbino disc
Authors:
Zahra Khatibi,
Habib Rostami,
Reza Asgari
Abstract:
We study analytically and numerically the magnetotransport of strained graphene in a Corbino geometry gating in the presence of an external perpendicular magnetic field. The conductance of the Corbino disc of deformed graphene with a uniaxial and an inhomogeneous strain is calculated by using the Landauer-Büttiker method. We show that the oscillation period of the conductance as a function of the…
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We study analytically and numerically the magnetotransport of strained graphene in a Corbino geometry gating in the presence of an external perpendicular magnetic field. The conductance of the Corbino disc of deformed graphene with a uniaxial and an inhomogeneous strain is calculated by using the Landauer-Büttiker method. We show that the oscillation period of the conductance as a function of the magnetic flux depends on uniaxial strain and the conductance sharply drops along the direction of graphene stretching. The conductance amplitude, on the other hand, can be manipulated by induced pseudomagnetic flux. A valley polarized regime, caused by the inhomogeneous strain, is obtained and in addition we find a wide energy interval in which the system is fully valley polarized.
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Submitted 25 November, 2013; v1 submitted 2 September, 2013;
originally announced September 2013.
