Showing 1–50 of 60 results for author: Kis, A

Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

Authors: Gabriele Pasquale, Zhe Sun, Kenji Watanabe, Takashi Taniguchi, Andras Kis

Abstract: The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semic… ▽ More The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here, we demonstrate a large and electrically tunable Nernst effect by combining graphene's electrical properties with indium selenide's semiconducting nature in a field-effect geometry. Our results establish a novel platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 10^3. Moreover, photocurrent measurements reveal a stronger photo-Nernst signal in the Gr/InSe heterostructure compared to individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μみゅーV K^(-1) T^(-1) at ultra-low temperatures and low magnetic fields, paving the way toward applications in quantum information and low-temperature emergent phenomena. △ Less

Submitted 23 June, 2024; originally announced June 2024.

Ultra-thin transistors and circuits for conformable electronics

Authors: Federico Parenti, Riccardo Sargeni, Elisabetta Dimaggio, Francesco Pieri, Filippo Fabbri, Tommaso Losi, Fabrizio Antonio Viola, Arindam Bala, Zhenyu Wang, Andras Kis, Mario Caironi, Gianluca Fiori

Abstract: Adapting electronics to perfectly conform to non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic and scientific interest ranging from health to robotics, wearable electronics, human machine interface and Internet of Things. The key to success lies in defining a technology that can lead to the fabr… ▽ More Adapting electronics to perfectly conform to non-planar and rough surfaces, such as human skin, is a very challenging task which, if solved, could open up new applications in fields of high economic and scientific interest ranging from health to robotics, wearable electronics, human machine interface and Internet of Things. The key to success lies in defining a technology that can lead to the fabrication of ultra-thin devices while exploiting materials that are ultimately thin, with high mechanical flexibility and excellent electrical properties. Here, we report a hybrid approach for the definition of high-performance, ultra-thin and conformable electronic devices and circuits, based on the integration of ultimately thin semiconducting transition metal dichalcogenides (TMDC), i.e., MoS2, with organic gate dielectric material, i.e., polyvinyl formal (PVF) combined with the ink-jet printing of conductive PEDOT:PSS ink for electrodes definition. Through this cost-effective, fully bottom-up and solution-based approach, transistors and simple digital and analogue circuits are fabricated by a sequential stacking of ultrathin (nanometer) layers on a few micron thick polyimide substrate, which guarantees the high flexibility mandatory for the targeted applications. △ Less

Submitted 24 June, 2024; v1 submitted 4 June, 2024; originally announced June 2024.

A high-$κかっぱ$ wide-gap layered dielectric for two-dimensional van der Waals heterostructures

Authors: A. Söll, E. Lopriore, A. K. Ottesen, J. Luxa, G. Pasquale, J. Sturala, F. Hájek, V. Jarý, D. Sedmidubský, K. Mosina, A. Kis, Z. Sofer

Abstract: Van der Waals heterostructures of two-dimensional materials have opened up new frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap high-$κかっぱ$ layered dielectrics for devices based on van der Waals structures has been relatively limited. In this work, we demonstrate an easily reproducible synt… ▽ More Van der Waals heterostructures of two-dimensional materials have opened up new frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic device applications. However, the investigation of wide-gap high-$κかっぱ$ layered dielectrics for devices based on van der Waals structures has been relatively limited. In this work, we demonstrate an easily reproducible synthesis method for the rare earth oxyhalide LaOBr, and we exfoliate it as a 2D layered material with a measured static dielectric constant of $εいぷしろん_{0, \perp} \simeq 9$ and a wide bandgap of 5.3 eV. Furthermore, our research demonstrates that LaOBr can be used as a high-$κかっぱ$ dielectric in van der Waals field-effect transistors with high performance and low interface defect concentrations. Additionally, it proves to be an attractive choice for electrical gating in excitonic devices based on 2D materials. Our work demonstrates the versatile realization and functionality of 2D systems with wide-gap and high-$κかっぱ$ van der Waals dielectric environments. △ Less

Submitted 25 July, 2023; originally announced July 2023.

Electrical detection of the flat band dispersion in van der Waals field-effect structures

Authors: Gabriele Pasquale, Edoardo Lopriore, Zhe Sun, Kristiāns Čerņevičs, Fedele Tagarelli, Kenji Watanabe, Takashi Taniguchi, Oleg V. Yazyev, Andras Kis

Abstract: Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat band position in field-effect structures are slowing down the investigation of their properties. In this work, we employ Indium Selenide (InSe)… ▽ More Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove singularities. However, the difficulties in electrically detecting the flat band position in field-effect structures are slowing down the investigation of their properties. In this work, we employ Indium Selenide (InSe) as a flat-band system due to a van Hove singularity at the valence band edge in a few-layer form of the material without the requirement of a twist angle. We investigate tunneling photocurrents in gated few-layer InSe structures and relate them to ambipolar transport and photoluminescence measurements. We observe an appearance of a sharp change in tunneling mechanisms due to the presence of the van Hove singularity at the flat band. We further corroborate our findings by studying tunneling currents as a reliable probe for the flat-band position up to room temperature. Our results create an alternative approach to studying flat-band systems in heterostructures of 2D materials. △ Less

Submitted 19 July, 2023; originally announced July 2023.

Journal ref: Nature Nanotechnology 18, 1416 (2023)

Nanofluidic logic with mechano-ionic memristive switches

Authors: Theo Emmerich, Yunfei Teng, Nathan Ronceray, Edoardo Lopriore, Riccardo Chiesa, Andrey Chernev, Vasily Artemov, Massimiliano Di Ventra, Andras Kis, Aleksandra Radenovic

Abstract: While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic computers mimicking the brain down to its basic principles of operation. Here, we present a nanofluidic device designed for circuit scale in-memory processing that… ▽ More While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic computers mimicking the brain down to its basic principles of operation. Here, we present a nanofluidic device designed for circuit scale in-memory processing that combines single-digit nanometric confinement and large entrance asymmetry. Our fabrication process is scalable while the device operates at the second timescale with a conductance ratio in the range 10-60. In-operando optical microscopy unveils the origin of memory, arising from the reversible formation of liquid blisters modulating the device conductance. The combination of features of these mechano-ionic memristive switches permits assembling logic circuits composed of two interactive devices and an ohmic resistor. These results open the way to design multi-component ionic machinery, such as nanofluidic neural networks, and implementing brain-inspired ionic computations. △ Less

Submitted 22 November, 2023; v1 submitted 13 June, 2023; originally announced June 2023.

Comparing 1-year GUMICS-4 simulations of the Terrestrial Magnetosphere with Cluster Measurements

Authors: Gabor Facsko, David Sibeck, Ilja Honkonen, Jozsef Bor, German Farinas Perez, Aniko Timar, Yuri Shprits, Pyry Peitso, Laura Degener, Eija Tanskanen, Chandrasekhar Reddy Anekallu, Sandor Szalai, Arpad Kis, Viktor Wesztergom, Akos Madar, Nikolett Biro, Gergely Koban, Andras Illyes, Peter Kovacs, Zsuzsanna Dalya, Munkhjargal Lkhagvadorj

Abstract: We compare the predictions of the GUMICS$-$4 global magnetohydrodynamic model for the interaction of the solar wind with the Earth's magnetosphere with Cluster~SC3 measurements for over one year, from January 29, 2002, to February 2, 2003. In particular, we compare model predictions with the north/south component of the magnetic field ($B_{z}$) seen by the magnetometer, the component of the veloci… ▽ More We compare the predictions of the GUMICS$-$4 global magnetohydrodynamic model for the interaction of the solar wind with the Earth's magnetosphere with Cluster~SC3 measurements for over one year, from January 29, 2002, to February 2, 2003. In particular, we compare model predictions with the north/south component of the magnetic field ($B_{z}$) seen by the magnetometer, the component of the velocity along the Sun-Earth line ($V_{x}$), and the plasma density as determined from a top hat plasma spectrometer and the spacecraft's potential from the electric field instrument. We select intervals in the solar wind, the magnetosheath, and the magnetosphere where these instruments provided good-quality data, and the model correctly predicted the region in which the spacecraft is located. We determine the location of the bow shock, the magnetopause, and the neutral sheet from the spacecraft measurements and compare these locations to those predicted by the simulation. The GUMICS$-$4 model agrees well with the measurements in the solar wind however its accuracy is worse in the magnetosheath. The simulation results are not realistic in the magnetosphere. The bow shock location is predicted well, however, the magnetopause location is less accurate. The neutral sheet positions are located quite accurately thanks to the special solar wind conditions when the $B_{y}$ component of the interplanetary magnetic field is small. △ Less

Submitted 5 May, 2023; originally announced May 2023.

Comments: submitted to the AGU Space Weather, 51 pages, 19 figures, 8 tables

Electrically tunable dipolar interactions between layer-hybridized excitons

Authors: Daniel Erkensten, Samuel Brem, Raul Perea-Causin, Joakim Hagel, Fedele Tagarelli, Edoardo Lopriore, Andras Kis, Ermin Malic

Abstract: Transition-metal dichalcogenide bilayers exhibit a rich exciton landscape including layer-hybridized excitons, i.e. excitons which are of partly intra- and interlayer nature. In this work, we study hybrid exciton-exciton interactions in naturally stacked WSe$_2$ homobilayers. In these materials, the exciton landscape is electrically tunable such that the low-energy states can be rendered more or l… ▽ More Transition-metal dichalcogenide bilayers exhibit a rich exciton landscape including layer-hybridized excitons, i.e. excitons which are of partly intra- and interlayer nature. In this work, we study hybrid exciton-exciton interactions in naturally stacked WSe$_2$ homobilayers. In these materials, the exciton landscape is electrically tunable such that the low-energy states can be rendered more or less interlayer-like depending on the strength of the external electric field. Based on a microscopic and material-specific many-particle theory, we reveal two intriguing interaction regimes: a low-dipole regime at small electric fields and a high-dipole regime at larger fields, involving interactions between hybrid excitons with a substantially different intra- and interlayer composition in the two regimes. While the low-dipole regime is characterized by weak inter-excitonic interactions between intralayer-like excitons, the high-dipole regime involves mostly interlayer-like excitons which display a strong dipole-dipole repulsion and give rise to large spectral blue-shifts and a highly anomalous diffusion. Overall, our microscopic study sheds light on the remarkable electrical tunability of hybrid exciton-exciton interactions in atomically thin semiconductors and can guide future experimental studies in this growing field of research. △ Less

Submitted 2 May, 2023; originally announced May 2023.

Comments: 8+8 pages, 4+2 figures

Journal ref: Nanoscale, 2023

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

Authors: Daniel S. Schneider, Leonardo Lucchesi, Eros Reato, Zhenyu Wang, Agata Piacentini, Jens Bolten, Damiano Marian, Enrique G. Marin, Aleksandra Radenovic, Zhenxing Wang, Gianluca Fiori, Andras Kis, Giuseppe Iannaccone, Daniel Neumaier, Max C. Lemme

Abstract: Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metal… ▽ More Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$Ωおめが$$μみゅー$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits. △ Less

Submitted 5 April, 2024; v1 submitted 3 April, 2023; originally announced April 2023.

Comments: 39 pages

Journal ref: npj 2D Materials and Applications, 8, 35, 2024

Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS2

Authors: Guilherme Migliato Marega, Hyun Goo Ji, Zhenyu Wang, Mukesh Tripathi, Aleksandra Radenovic, Andras Kis

Abstract: Led by the rise of the internet of things, the world is experiencing exponential growth of generated data. Data-driven algorithms such as signal processing and artificial neural networks are required to process and extract meaningful information from it. They are, however, seriously limited by the traditional von-Neuman architecture with physical separation between processing and memory, motivatin… ▽ More Led by the rise of the internet of things, the world is experiencing exponential growth of generated data. Data-driven algorithms such as signal processing and artificial neural networks are required to process and extract meaningful information from it. They are, however, seriously limited by the traditional von-Neuman architecture with physical separation between processing and memory, motivating the development of in-memory computing. This emerging architecture is gaining attention by promising more energy-efficient computing on edge devices. In the past few years, two-dimensional materials have entered the field as a material platform suitable for realizing efficient memory elements for in-memory architectures. Here, we report a large-scale integrated 32x32 vector-matrix multiplier with 1024 floating-gate field-effect transistors (FGFET) that use monolayer MoS2 as the channel material. In our wafer-scale fabrication process, we achieve a high yield and low device-to-device variability, which are prerequisites for practical applications. A statistical analysis shows the potential for multilevel and analog storage with a single programming pulse, allowing our accelerator to be programmed using an efficient open-loop programming scheme. Next, we demonstrate reliable, discrete signal processing in a highly parallel manner. Our findings set the grounds for creating the next generation of in-memory processors and neural network accelerators that can take advantage of the full benefits of semiconducting van der Waals materials for non-von Neuman computing. △ Less

Submitted 13 March, 2023; originally announced March 2023.

Journal ref: Nature Electronics volume 6, pages 991-998 (2023)

Electrical control of hybrid exciton transport in a van der Waals heterostructure

Authors: Fedele Tagarelli, Edoardo Lopriore, Daniel Erkensten, Raül Perea-Causín, Samuel Brem, Joakim Hagel, Zhe Sun, Gabriele Pasquale, Kenji Watanabe, Takashi Taniguchi, Ermin Malic, Andras Kis

Abstract: Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack of direct control over collective dipolar properties has hitherto limited the degrees of tunability and the microscopic understanding of exciton transport. In this work, we modulate the layer hybridization and interplay between many-body interactions of excitons in a van der Waals het… ▽ More Interactions between out-of-plane dipoles in bosonic gases enable the long-range propagation of excitons. The lack of direct control over collective dipolar properties has hitherto limited the degrees of tunability and the microscopic understanding of exciton transport. In this work, we modulate the layer hybridization and interplay between many-body interactions of excitons in a van der Waals heterostructure with an applied vertical electric field. By performing spatiotemporally resolved measurements supported by microscopic theory, we uncover the dipole-dependent properties and transport of excitons with different degrees of hybridization. Moreover, we find constant emission quantum yields of the transporting species as a function of excitation power with dominating radiative decay mechanisms over nonradiative ones, a fundamental requirement for efficient excitonic devices. Our findings provide a complete picture of the many-body effects in the transport of dilute exciton gases and have crucial implications for the study of emerging states of matter, such as Bose-Einstein condensation, as well as for optoelectronic applications based on exciton propagation. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Journal ref: Nature Photonics 17, 615 (2023)

Flat-band-induced many-body interactions and exciton complexes in a layered semiconductor

Authors: Gabriele Pasquale, Zhe Sun, Kristians Cernevics, Raul Perea-Causin, Fedele Tagarelli, Kenji Watanabe, Takashi Taniguchi, Ermin Malic, Oleg V. Yazyev, Andras Kis

Abstract: Interactions among a collection of particles generate many-body effects in solids resulting in striking modifications of material properties. The heavy carrier mass that yields strong interactions and gate control of carrier density over a wide range, make two-dimensional semiconductors an exciting playground to explore many-body physics. The family of III-VI metal monochalcogenides emerges as a n… ▽ More Interactions among a collection of particles generate many-body effects in solids resulting in striking modifications of material properties. The heavy carrier mass that yields strong interactions and gate control of carrier density over a wide range, make two-dimensional semiconductors an exciting playground to explore many-body physics. The family of III-VI metal monochalcogenides emerges as a new platform for this purpose due to its excellent optical properties and the flat valence band dispersion with a Mexican-hat-like inversion. In this work, we present a complete study of charge-tunable excitons in few-layer InSe by photoluminescence spectroscopy. From the optical spectra, we establish that free excitons in InSe are more likely to be captured by ionized donors due to the large exciton Bohr radius, leading to the formation of bound exciton complexes. Surprisingly, a pronounced redshift of the exciton energy accompanied by a decrease of the exciton binding energy upon hole-doping reveals a significant band gap renormalization and dynamical screening induced by the presence of the Fermi reservoir. Our findings establish InSe as a reproducible and potentially manufacturable platform to explore electron correlation phenomena without the need for twist-angle engineering. △ Less

Submitted 27 July, 2022; originally announced July 2022.

High-throughput nanopore fabrication and classification using FIB irradiation and automated pore edge analysis

Authors: Michal Macha, Sanjin Marion, Mukesh Tripathi, Mukeshchand Thakur, Martina Lihter, Andras Kis, Alex Smolyanitsky, Aleksandra Radenovic

Abstract: Large-area nanopore drilling is a major bottleneck in state-of-the-art nanoporous 2D membrane fabrication protocols. In addition, high-quality structural and statistical descriptions of as-fabricated porous membranes are key to predicting the corresponding membrane-wide permeation properties. In this work, we investigate Xe-ion focused ion beam as a tool for scalable, large-area nanopore fabricati… ▽ More Large-area nanopore drilling is a major bottleneck in state-of-the-art nanoporous 2D membrane fabrication protocols. In addition, high-quality structural and statistical descriptions of as-fabricated porous membranes are key to predicting the corresponding membrane-wide permeation properties. In this work, we investigate Xe-ion focused ion beam as a tool for scalable, large-area nanopore fabrication on atomically thin, free-standing molybdenum disulphide. The presented irradiation protocol enables designing ultrathin membranes with tunable porosity and pore dimension, along with spatial uniformity across large-area substrates. Fabricated nanoporous membranes were characterized using scanning transmission electron microscopy imaging and the observed nanopore geometries were analyzed through a pore-edge detection script. We further demonstrated that the obtained structural and statistical data can be readily passed on to computational and analytical tools to predict the permeation properties at both individual pore and membrane-wide scales. As an example, membranes featuring angstrom-scale pores were investigated in terms of their emerging water and ion flow properties through extensive all-atom molecular dynamics simulations. We believe that the combination of experimental and analytical approaches presented here should yield accurate physics-based property estimates and thus potentially enable a true function-by-design approach to fabrication for applications such as osmotic power generation, desalination/filtration, as well as their strain-tunable versions. △ Less

Submitted 26 May, 2022; originally announced May 2022.

Zero Bias Power Detector Circuits based on MoS$_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates

Authors: Eros Reato, Paula Palacios, Burkay Uzlu, Mohamed Saeed, Annika Grundmann, Zhenyu Wang, Daniel S. Schneider, Zhenxing Wang, Michael Heuken, Holger Kalisch, Andrei Vescan, Alexandra Radenovic, Andras Kis, Daniel Neumaier, Renato Negra, Max C. Lemme

Abstract: We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μみゅー$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing dif… ▽ More We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μみゅー$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS$_2$, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dBでしべる outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes. △ Less

Submitted 9 April, 2022; v1 submitted 9 February, 2022; originally announced February 2022.

Comments: 28 pages

Journal ref: Advanced Materials, 202108469, 2022

Excitonic transport driven by repulsive dipolar interaction in a van der Waals heterostructure

Authors: Zhe Sun, Alberto Ciarrocchi, Fedele Tagarelli, Juan Francisco Gonzalez Marin, Kenji Watanabe, Takashi Taniguchi, Andras Kis

Abstract: Dipolar bosonic gases are currently the focus of intensive research due to their interesting many-body physics in the quantum regime. Their experimental embodiments range from Rydberg atoms to GaAs double quantum wells and van der Waals heterostructures built from transition metal dichalcogenides. Although quantum gases are very dilute, mutual interactions between particles could lead to exotic ma… ▽ More Dipolar bosonic gases are currently the focus of intensive research due to their interesting many-body physics in the quantum regime. Their experimental embodiments range from Rydberg atoms to GaAs double quantum wells and van der Waals heterostructures built from transition metal dichalcogenides. Although quantum gases are very dilute, mutual interactions between particles could lead to exotic many-body phenomena such as Bose-Einstein condensation and high-temperature superfluidity. Here, we report the effect of repulsive dipolar interactions on the dynamics of interlayer excitons in the dilute regime. By using spatial and time-resolved photoluminescence imaging, we observe the dynamics of exciton transport, enabling a direct estimation of the exciton mobility. The presence of interactions significantly modifies the diffusive transport of excitons, effectively acting as a source of drift force and enhancing the diffusion coefficient by one order of magnitude. The repulsive dipolar interactions combined with the electrical control of interlayer excitons opens up appealing new perspectives for excitonic devices. △ Less

Submitted 15 October, 2021; originally announced October 2021.

Journal ref: Nature Photonics 16, 79 (2022)

Magnetic Reconnection within the Boundary Layer of a Magnetic Cloud in the Solar Wind

Authors: Zoltán Vörös, Ali Varsani, Emiliya Yordanova, Yury L. Sasunov, Owen W. Roberts, Arpád Kis, Rumi Nakamura, Yasuhito Narita

Abstract: The twisted local magnetic field at the front or rear regions of the magnetic clouds (MCs) associated with interplanetary coronal mass ejections (ICMEs) is often nearly opposite to the direction of the ambient interplanetary magnetic field (IMF). There is also observational evidence for magnetic reconnection (MR) outflows occurring within the boundary layers of MCs. In this paper a MR event locate… ▽ More The twisted local magnetic field at the front or rear regions of the magnetic clouds (MCs) associated with interplanetary coronal mass ejections (ICMEs) is often nearly opposite to the direction of the ambient interplanetary magnetic field (IMF). There is also observational evidence for magnetic reconnection (MR) outflows occurring within the boundary layers of MCs. In this paper a MR event located at the western flank of the MC occurring on 2000-10-03 is studied in detail. Both the large-scale geometry of the helical MC and the MR outflow structure are scrutinized in a detailed multi-point study. The ICME sheath is of hybrid propagation-expansion type. Here the freshly reconnected open field lines are expected to slip slowly over the MC resulting in plasma mixing at the same time. As for MR, the current sheet geometry and the vertical motion of the outflow channel between ACE-Geotail-WIND spacecraft was carefully studied and tested. The main findings on MR include: (1) First-time observation of non-Petschek-type slow-shock-like discontinuities in the inflow regions; (2) Observation of turbulent Hall magnetic field associated with a Lorentz force deflected electron jet; (3) Acceleration of protons by reconnection electric field and their back-scatter from the slow shock-like discontinuity; (4) Observation of relativistic electron near the MC inflow boundary/separatrix; these electron populations can presumably appear as a result of non-adiabatic acceleration, gradient B drift and via acceleration in the electrostatic potential well associated with the Hall current system; (5) Observation of Doppler shifted ion-acoustic and Langmuir waves in the MC inflow region. △ Less

Submitted 25 August, 2021; v1 submitted 20 August, 2021; originally announced August 2021.

Comments: 43 pages, 10 figures, accepted in J. Geophys. Res. - Space Phys

Engineering optically active defects in hexagonal boron nitride using focused ion beam and water

Authors: Evgenii Glushkov, Michal Macha, Esther Rath, Vytautas Navikas, Nathan Ronceray, Cheol Yeon Cheon, Ahmed Aqeel, Ahmet Avsar, Kenji Watanabe, Takashi Taniguchi, Ivan Shorubalko, Andras Kis, Georg Fantner, Aleksandra Radenovic

Abstract: Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and ap… ▽ More Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and applications in hybrid devices. Recently, focused ion beam (FIB) systems proved to be useful to engineer several types of spatially-defined emitters with various structural and photophysical properties. Here we systematically explore the physical processes leading to the creation of optically-active defects in hBN using FIB, and find that beam-substrate interaction plays a key role in the formation of defects. These findings are confirmed using transmission electron microscopy that reveals local mechanical deterioration of the hBN layers and local amorphization of ion beam irradiated hBN. Additionally, we show that upon exposure to water, amorphized hBN undergoes a structural and optical transition between two defect types with distinctive emission properties. Moreover, using super-resolution optical microscopy combined with atomic force microscopy, we pinpoint the exact location of emitters within the defect sites, confirming the role of defected edges as primary sources of fluorescent emission. This lays the foundation for FIB-assisted engineering of optically-active defects in hBN with high spatial and spectral control for applications ranging from integrated photonics, to quantum sensing to nanofluidics. △ Less

Submitted 5 July, 2021; originally announced July 2021.

Comments: 11 pages, 5 figures

Super-resolved optical mapping of reactive sulfur-vacancy in 2D transition metal dichalcogenides

Authors: Miao Zhang, Martina Lihter, Michal Macha, Karla Banjac, Yanfei Zhao, Zhenyu Wang, Jing Zhang, Jean Comtet, Magalí Lingenfelder, Andras Kis, Aleksandra Radenovic

Abstract: Transition metal dichalcogenides (TMDs) represent an entire new class of semiconducting 2D materials with exciting properties. Defects in 2D TMDs can crucially affect their physical and chemical properties. However, characterization of the presence and spatial distribution of defects is limited either in throughput or in resolution. Here, we demonstrate large area mapping of reactive sulfur-defici… ▽ More Transition metal dichalcogenides (TMDs) represent an entire new class of semiconducting 2D materials with exciting properties. Defects in 2D TMDs can crucially affect their physical and chemical properties. However, characterization of the presence and spatial distribution of defects is limited either in throughput or in resolution. Here, we demonstrate large area mapping of reactive sulfur-deficient defects in 2D-TMDs coupling single-molecule localization microscopy with fluorescence labeling using thiol chemistry. Our method, reminiscent of PAINT strategies, relies on the specific binding by reversible physisorption of fluorescent probes to sulfur-vacancies via a thiol group and their intermittent emission to apply localization of the labeled defects with a precision down to 15 nm. Tuning the distance between the fluorophore and the docking thiol site allows us to control Föster Resonance Energy Transfer (FRET) process and reveal large structural defects such as grain boundaries and line defects, due to the local irregular lattice structure. Our methodology provides a simple and fast alternative for large-scale mapping of non-radiative defects in 2D materials and paves the way for in-situ and spatially resolved monitoring of the interaction between chemical agent and the defects in 2D materials that has general implications for defect engineering in aqueous condition. △ Less

Submitted 22 June, 2020; originally announced June 2020.

Strongly coupled coherent phonons in single-layer MoS$_2$

Authors: C. Trovatello, H. P. C. Miranda, A. Molina-Sánchez, R. Borrego Varillas, C. Manzoni, L. Moretti, L. Ganzer, M. Maiuri, J. Wang, D. Dumcenco, A. Kis, L. Wirtz, A. Marini, G. Soavi, A. C. Ferrari, G. Cerullo, D. Sangalli, S. Dal Conte

Abstract: We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), wher… ▽ More We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Journal ref: ACS Nano 14, 5700 (2020)

Light Enhanced Blue Energy Generation using MoS$_2$ Nanopores

Authors: Michael Graf, Martina Lihter, Dmitrii Unuchek, Aditya Sarathy, Jean-Pierre Leburton, Andras Kis, Aleksandra Radenovic

Abstract: Blue energy relies on the chemical potential difference generated between solutions of high and low ionic strength and would provide a sun-and-wind independent energy source at estuaries around the world. Converting this osmotic energy through reverse-electrodialysis relies on ion-selective membranes. A novel generation of these membranes is based on atomically thin MoS$_2$ membranes to decrease t… ▽ More Blue energy relies on the chemical potential difference generated between solutions of high and low ionic strength and would provide a sun-and-wind independent energy source at estuaries around the world. Converting this osmotic energy through reverse-electrodialysis relies on ion-selective membranes. A novel generation of these membranes is based on atomically thin MoS$_2$ membranes to decrease the resistance to current flow to increase power output. By modulating the surface charge by light we are able to raise the ion selectivity of the membrane by a factor of 5 while staying at a neutral pH. Furthermore, we find that the behavior of small nanopores is dominated by surface conductance. We introduce a formalism based on the Dukhin number to quantify these effects in the case of a concentration gradient system. As a consequence, the charges created by light illumination provoke two important changes. Increased surface charge at the pore rim enhances the ion selectivity and therefore larger osmotic voltage (dominating in small pores), while the increased surface charge of the overall membrane enhances the surface conductance and therefore the osmotic current (dominating in larger pores). The combination of these effects might be able to efficiently boost the energy generation with arrays of nanopores with varying pore sizes. △ Less

Submitted 1 February, 2019; originally announced February 2019.

Long term measurements from the Mátra Gravitational and Geophysical Laboratory

Authors: P. Ván, G. G. Barnaföldi, T. Bulik, T. Biró, S. Czellár, M. Cieślar, Cs. Czanik, E. Dávid, E. Debreceni, M. Denys, M. Dobróka, E. Fenyvesi, D. Gondek-Rosińska, Z. Gráczer, G. Hamar, G. Huba, B. Kacskovics, Á. Kis, I. Kovács, R. Kovács, I. Lemperger, P. Lévai, S. Lökös, J. Mlynarczyk, J. Molnár , et al. (15 additional authors not shown)

Abstract: Summary of the long term data taking, related to one of the proposed next generation ground-based gravitational detector's location is presented here. Results of seismic and infrasound noise, electromagnetic attenuation and cosmic muon radiation measurements are reported in the underground Matra Gravitational and Geophysical Laboratory near Gyöngyösoroszi, Hungary. The collected seismic data of mo… ▽ More Summary of the long term data taking, related to one of the proposed next generation ground-based gravitational detector's location is presented here. Results of seismic and infrasound noise, electromagnetic attenuation and cosmic muon radiation measurements are reported in the underground Matra Gravitational and Geophysical Laboratory near Gyöngyösoroszi, Hungary. The collected seismic data of more than two years is evaluated from the point of view of the Einstein Telescope, a proposed third generation underground gravitational wave observatory. Applying our results for the site selection will significantly improve the signal to nose ratio of the multi-messenger astrophysics era, especially at the low frequency regime. △ Less

Submitted 13 November, 2018; originally announced November 2018.

Comments: 47 pages, 37 figures

Journal ref: The European Physical Journal, Special Topics 228, 1693-1743 (2019)

Non equilibrium anisotropic excitons in atomically thin ReS$_2$

Authors: J. M. Urban, M. Baranowski, A. Kuc, L. Klopotowski, A. Surrente, Y. Ma, D. Wlodarczyk, A. Suchocki, D. Ovchinnikov, T. Heine, D. K. Maude, A. Kis, P. Plochocka

Abstract: We present a systematic investigation of the electronic properties of bulk and few layer ReS$_2$ van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by $\sim$ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Bo… ▽ More We present a systematic investigation of the electronic properties of bulk and few layer ReS$_2$ van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by $\sim$ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS$_2$ to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases. △ Less

Submitted 8 November, 2018; originally announced November 2018.

Journal ref: 2D Materials 6, 015012 (2019)

A global study of hot flow anomalies using Cluster multi-spacecraft measurements

Authors: Gabor Facsko, Zoltan Nemeth, Geza Erdos, Arpad Kis, Iannis Dandouras

Abstract: Hot flow anomalies (HFAs) are studied using observations of the magnetometer and the plasma instrument aboard the four Cluster spacecraft. We study several specific features of tangential discontinuities on the basis of Cluster measurements from the time periods of February-April 2003, December 2005-April 2006 and January-April 2007, when the separation distance of spacecraft was large. The previo… ▽ More Hot flow anomalies (HFAs) are studied using observations of the magnetometer and the plasma instrument aboard the four Cluster spacecraft. We study several specific features of tangential discontinuities on the basis of Cluster measurements from the time periods of February-April 2003, December 2005-April 2006 and January-April 2007, when the separation distance of spacecraft was large. The previously discovered condition (Facsko et al., 2008) for forming HFAs is confirmed, i.e. that the solar wind speed and fast magnetosonic Mach number values are higher than average. Furthermore, this constraint is independent of the Schwartz et al. (2000)s condition for HFA formation. The existence of this new condition is confirmed by simultaneous ACE magnetic field and solar wind plasma observations at the L1 point, at 1.4 million km distance from the Earth. The temperature, particle density and pressure parameters observed at the time of HFA formation are also studied and compared to average values of the solar wind plasma. The size of the region affected by the HFA was estimated by using two different methods. We found that the size is mainly influenced by the magnetic shear and the angle between the discontinuity normal and the Sun-Earth direction. The size grows with the shear and (up to a certain point) with the angle as well. After that point it starts decreasing. The results are compared with the outcome of recent hybrid simulations. △ Less

Submitted 19 July, 2018; originally announced July 2018.

Comments: 20 pages, 12 figure, published in 2009

Journal ref: Facsko, G., Nemeth, Z., Erdos, G., Kis, A., and Dandouras, I.: A global study of hot flow anomalies using Cluster multi-spacecraft measurements, Ann. Geophys., 27, 2057-2076, https://doi.org/10.5194/angeo-27-2057-2009, 2009

Intervalley Scattering of Interlayer Excitons in a MoS$_2$/MoSe$_2$/MoS$_2$ Heterostructure in High Magnetic Field

Authors: Alessandro Surrente, Lukasz Klopotowski, Nan Zhang, Michal Baranowski, Anatolie A. Mitioglu, Mariana V. Ballottin, Peter C. M. Christianen, Dumitru Dumcenco, Yen-Cheng Kung, Duncan K. Maude, Andras Kis, Paulina Plochocka

Abstract: Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals heterostructures based on transition metal dichalcogenides. Using magneto-photoluminescence spectroscopy, we achieve a deeper insight into the valley polarizati… ▽ More Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals heterostructures based on transition metal dichalcogenides. Using magneto-photoluminescence spectroscopy, we achieve a deeper insight into the valley polarization and depolarization mechanisms of interlayer excitons formed across a MoS$_2$/MoSe$_2$/MoS$_2$ heterostructure. We account for the non-trivial behavior of the valley polarization as a function of the magnetic field by considering the interplay between exchange interaction and phonon mediated intervalley scattering in a system consisting of Zeeman-split energy levels. Our results represent a crucial step towards the understanding of the properties of interlayer excitons, with strong implications for the implementation of atomically thin valleytronic devices. △ Less

Submitted 25 May, 2018; originally announced May 2018.

Comments: just accepted in Nano Letters, DOI: 10.1021/acs.nanolett.8b01484

Control of interlayer excitons in two-dimensional van der Waals heterostructures

Authors: Alberto Ciarrocchi, Dmitrii Unuchek, Ahmet Avsar, Kenji Watanabe, Takashi Taniguchi, Andras Kis

Abstract: Long-lived interlayer excitons with distinct spin-valley physics in van der Waals heterostructures based on transition metal dichalcogenides make them promising for information processing in next-generation devices. While the emission characteristics of interlayer excitons in different types of hetero stacks have been extensively studied, the manipulation of these excitons required to alter the va… ▽ More Long-lived interlayer excitons with distinct spin-valley physics in van der Waals heterostructures based on transition metal dichalcogenides make them promising for information processing in next-generation devices. While the emission characteristics of interlayer excitons in different types of hetero stacks have been extensively studied, the manipulation of these excitons required to alter the valley-state or tune the emission energy and intensity is still lacking. Here, we demonstrate such control over interlayer excitons in MoSe2/WSe2 heterostructures. The encapsulation of our stack with h-BN ensures ultraclean interfaces, allowing us to resolve four separate narrow interlayer emission peaks. We observe two main interlayer transitions with opposite helicities under circularly polarized excitation, either conserving or inverting the polarization of incoming light. We further demonstrate control over the wavelength, intensity, and polarization of exciton emission by electrical and magnetic fields. Such ability to manipulate the interlayer excitons and their polarization could pave the way for novel excitonic and valleytronic device applications. △ Less

Submitted 16 March, 2018; originally announced March 2018.

Journal ref: Nature Photonics 13, 131-136 (2019)

Midlatitude ionospheric F2-layer response to eruptive solar events-caused geomagnetic disturbances over Hungary during the maximum of the solar cycle 24: a case study

Authors: K. A. Berényi, V. Barta, Á. Kis

Abstract: In our study we analyze and compare the response and behavior of the ionospheric F2 and of the sporadic E-layer during three strong (i.e., Dst <-100nT) individual geomagnetic storms from years 2012, 2013 and 2015, winter time period. The data was provided by the state-of the art digital ionosonde of the Széchenyi István Geophysical Observatory located at midlatitude, Nagycenk, Hungary (IAGA code:… ▽ More In our study we analyze and compare the response and behavior of the ionospheric F2 and of the sporadic E-layer during three strong (i.e., Dst <-100nT) individual geomagnetic storms from years 2012, 2013 and 2015, winter time period. The data was provided by the state-of the art digital ionosonde of the Széchenyi István Geophysical Observatory located at midlatitude, Nagycenk, Hungary (IAGA code: NCK, geomagnetic lat.: 46,17° geomagnetic long.: 98,85°). The local time of the sudden commencement (SC) was used to characterize the type of the ionospheric storm (after Mendillo and Narvaez, 2010). This way two regular positive phase (RPP) ionospheric storms and one no-positive phase (NPP) storm have been analyzed. In all three cases a significant increase in electron density of the foF2 layer can be observed at dawn/early morning (around 6:00 UT, 07:00 LT). Also we can observe the fade-out of the ionospheric layers at night during the geomagnetically disturbed time periods. Our results suggest that the fade-out effect is not connected to the occurrence of the sporadic E-layers. △ Less

Submitted 5 March, 2018; originally announced March 2018.

Journal ref: Adv.Space.Res.61:1230-1243,2018

Probing the inter-layer exciton physics in a MoS$_2$/MoSe$_2$/MoS$_2$ van der Waals heterostructure

Authors: M. Baranowski, A. Surrente, L. Klopotowski, J. M. Urban, N. Zhang, D. K. Maude, K. Wiwatowski, S. Mackowski, Y. C. Kung, D. Dumcenco, A. Kis, P. Plochocka

Abstract: Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe… ▽ More Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe$_2$ heterostructures. Here we report on the observation of long lived inter-layer exciton emission in a MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructure. The inter-layer nature of the observed transition is confirmed by photoluminescence spectroscopy, as well as by analyzing the temporal, excitation power and temperature dependence of the inter-layer emission peak. The observed complex photoluminescence dynamics suggests the presence of quasi-degenerate momentum-direct and momentum-indirect bandgaps. We show that circularly polarized optical pumping results in long lived valley polarization of inter-layer exciton. Intriguingly, the inter-layer exciton photoluminescence has helicity opposite to the excitation. Our results show that through a careful choice of the TMDs forming the van der Waals heterostructure it is possible to control the circular polarization of the inter-layer exciton emission. △ Less

Submitted 13 September, 2017; originally announced September 2017.

Comments: 19 pages, 3 figures. Just accepted for publication in Nano Letters (http://pubs.acs.org/doi/10.1021/acs.nanolett.7b03184)

Searching for effects caused by thunderstorms in midlatitude sporadic E layers

Authors: Veronika Barta, Christos Haldoupis, Gabriella Sátori, Dalia Buresova, Jaroslav Chum, Mariusz Pozoga, Kitti A. Berényi, József Bór, Martin Popek, Árpád Kis, Pál Bencze

Abstract: Possible thunderstorm - sporadic E (Es) layer coupling effects are investigated during two measurement periods, one in 2013 and one in 2014. The analysis was based on ionospheric observations obtained from a Digisonde at Pruhonice, the Czech Republic, an ionosonde at Nagycenk, Hungary, and a 3.59 MHz five-point continuous HF Doppler system located in the western part of the Czech Republic. The lat… ▽ More Possible thunderstorm - sporadic E (Es) layer coupling effects are investigated during two measurement periods, one in 2013 and one in 2014. The analysis was based on ionospheric observations obtained from a Digisonde at Pruhonice, the Czech Republic, an ionosonde at Nagycenk, Hungary, and a 3.59 MHz five-point continuous HF Doppler system located in the western part of the Czech Republic. The latter is capable of detecting ionospheric wave-like variations caused by neutral atmospheric waves generated by thunderstorms. The present study searches for possible impacts on Es layers caused by the presence of two active thunderstorms: one passing across the Czech Republic on June 20, 2013 (19:00 - 01:00 LT), and one through Hungary on July 30, 2014 (11:00 - 01:00 LT). During these two time periods, presence and parameters of Es layer were inferred from ionograms, recorded every minute at Pruhonice and every two minutes at Nagycenk, whereas concurrent lightning activity was monitored by the LINET detection network. In addition, transient luminous events (TLEs) were also observed during both nights from Sopron, Hungary and from Nydek, the Czech Republic. A noticeable fact was the reduction and disappearance of the ongoing Es layer activity during part of the time in both of the traversing thunderstorms. The analysis indicated that the critical frequency foEs dropped below ionosonde detection levels in both cases, possibly because of thunderstorm activity effects. This option, however, needs more case studies in order to be further substantiated. △ Less

Submitted 1 August, 2017; originally announced August 2017.

Journal ref: Journal of Atmospheric and Solar-Terrestrial Physics, Volume 161, August 2017, Pages 150-159

Highly-Oriented Atomically Thin Ambipolar MoSe$_2$ Grown by Molecular Beam Epitaxy

Authors: Ming-Wei Chen, Dmitry Ovchinnikov, Sorin Lazar, Michele Pizzochero, Michael Brian Whitwick, Alessandro Surrente, Michał Baranowski, Oriol Lopez Sanchez, Philippe Gillet, Paulina Plochocka, Oleg V. Yazyev, Andras Kis

Abstract: Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin Mo… ▽ More Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin MoSe$_2$ on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe$_2$. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Optospintronics in graphene via proximity coupling

Authors: Ahmet Avsar, Dmitrii Unuchek, Jiawei Liu, Oriol Lopez Sanchez, Kenji Watanabe, Takashi Taniguchi, Barbaros Ozyilmaz, Andras Kis

Abstract: The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive dire… ▽ More The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the spin injection efficiencies and hence prevent the material from achieving its full potential. While this major issue could be eliminated by nondestructive direct optical spin injection schemes, graphenes intrinsically low spin orbit coupling strength and optical absorption place an obstacle in their realization. We overcome this challenge by creating sharp artificial interfaces between graphene and WSe2 monolayers. Application of a circularly polarized light activates the spin polarized charge carriers in the WSe2 layer due to its spin coupled valley selective absorption. These carriers diffuse into the superjacent graphene layer, transport over a 3.5 um distance, and are finally detected electrically using BN/Co contacts in a non local geometry. Polarization dependent measurements confirm the spin origin of the non local signal. △ Less

Submitted 29 May, 2017; originally announced May 2017.

Journal ref: ACS Nano, 2017

High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

Authors: Foad Ghasemi, Riccardo Frisenda, Dumitru Dumcenco, Andras Kis, David Perez de Lara, Andres Castellanos-Gomez

Abstract: The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate… ▽ More The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 μみゅーm2 and 60 μみゅーm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large area CVD grown samples. △ Less

Submitted 6 April, 2017; originally announced April 2017.

Comments: 10 pages, 5 figures

Journal ref: Electronics, 6, p.28 (2017)

Defect healing and charge transfer mediated valley polarization in MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructures

Authors: Alessandro Surrente, Dumitru Dumcenco, Zhuo Yang, Agnieszka Kuc, Yu Jing, Thomas Heine, Yen-Cheng Kung, Duncan K. Maude, Andras Kis, Paulina Plochocka

Abstract: Monolayer transition metal dichalcogenides (TMDC) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDC. In this work we show that the optical quality of CVD-grown MoSe$_2$ is completely recovered if the material is sandwiched in MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructures. We show by means of density-function… ▽ More Monolayer transition metal dichalcogenides (TMDC) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDC. In this work we show that the optical quality of CVD-grown MoSe$_2$ is completely recovered if the material is sandwiched in MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructures. We show by means of density-functional theory that this remarkable and unexpected result is due to defect healing: S atoms of the more reactive MoS$_2$ layers are donated to heal Se vacancy defects in the middle MoSe$_2$ layer. In addition, the trilayer structure exhibits a considerable charge-transfer mediated valley polarization of MoSe$_2$ without the need for resonant excitation. Our fabrication approach, relying solely on simple flake transfer technique, paves the way for the scalable production of large-area TMDC materials with excellent optical quality. △ Less

Submitted 14 June, 2017; v1 submitted 2 March, 2017; originally announced March 2017.

Comments: Just accepted for publication in Nano Letters (http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b00904)

Dark excitons and the elusive valley polarization in transition metal dichalcogenides

Authors: M. Baranowski, A. Surrente, D. K. Maude, M Ballottin, A. A. Mitioglu, P. C. M. Christianen, Y. C. Kung, D. Dumcenco, A. Kis, P Plochocka

Abstract: A rate equation model for the dark and bright excitons kinetics is proposed which explains the wide variation in the observed degree of circular polarization of the PL emission in different TMDs monolayers. Our work suggests that the dark exciton states play an important, and previously unsuspected role in determining the degree of polarization of the PL emission. A dark exciton ground state provi… ▽ More A rate equation model for the dark and bright excitons kinetics is proposed which explains the wide variation in the observed degree of circular polarization of the PL emission in different TMDs monolayers. Our work suggests that the dark exciton states play an important, and previously unsuspected role in determining the degree of polarization of the PL emission. A dark exciton ground state provides a robust reservoir for valley polarization, which tries to maintain a Boltzmann distribution of the bright exciton states in the same valley via the intra valley bright dark exciton scattering mechanism. The dependence of the degree of circular polarization on the detuning energy of the excitation in MoSe$_2$ suggests that the electron-hole exchange interaction dominates over two LA phonon emission mechanism for inter valley scattering in TMDs. △ Less

Submitted 17 January, 2017; v1 submitted 11 January, 2017; originally announced January 2017.

Comments: text without changes, the misspelling of one of the names corrected

Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials

Authors: Riccardo Frisenda, Yue Niu, Patricia Gant, Aday J. Molina-Mendoza, Robert Schmidt, Rudolf Bratschitsch, Jinxin Liu, Lei Fu, Dumitru Dumcenco, Andras Kis, David Perez De Lara, Andres Castellanos-Gomez

Abstract: Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D… ▽ More Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D materials with a lateral resolution of ~1 micron in the visible and near-infrared part of the spectrum. We demonstrate the potential of the presented setup to determine the number of layers of 2D materials and to characterize their fundamental optical properties such as excitonic resonances. We illustrate its performance by studying mechanically exfoliated and chemical vapor-deposited transition metal dichalcogenide samples. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Comments: 5 main text figures + 1 table with all the part numbers to replicate the experimental setup + 4 supp. info. figures

First report of long term measurements of the {MGGL} laboratory in the {M}átra mountain range

Authors: G. G. Barnaföldi, T. Bulik, M. Cieslar, E. Dávid, M. Dobróka, E. Fenyvesi, D. Gondek-Rosinska, Z. Gráczer, G. Hamar, G. Huba, Á. Kis, R. Kovács, I. Lemperger, P. Lévai, J. Molnár, D. Nagy, A. Novák, L. Oláh, P. Pázmándi, D. Piri, L. Somlai, T. Starecki, M. Suchenek, G. Surányi, S. Szalai , et al. (6 additional authors not shown)

Abstract: Matra Gravitational and Geophysical Laboratory (MGGL) has been established near Gyöngyösoroszi, Hungary in 2015, in the cavern system of an unused ore mine. The Laboratory is located at 88~m below the surface, with the aim to measure and analyse the advantages of the underground installation of third generation gravitational wave detectors. Specialized instruments have been installed to measure se… ▽ More Matra Gravitational and Geophysical Laboratory (MGGL) has been established near Gyöngyösoroszi, Hungary in 2015, in the cavern system of an unused ore mine. The Laboratory is located at 88~m below the surface, with the aim to measure and analyse the advantages of the underground installation of third generation gravitational wave detectors. Specialized instruments have been installed to measure seismic, infrasound, electromagnetic noise, and the variation of the cosmic muon flux. In the preliminary (RUN-0) test period, March-August 2016, data collection has been accomplished. In this paper we describe the research potential of the MGGL, list the installed equipments and summarize the experimental results of RUN-0. Here we report RUN-0 data, that prepares systematic and synchronized data collection of the next run period. △ Less

Submitted 3 May, 2017; v1 submitted 24 October, 2016; originally announced October 2016.

Comments: 24 pages, 16 figures, accepted version

Journal ref: Class. Quantum Grav. 2017, V34, 114001 (22pp)

Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction

Authors: Oriol Lopez Sanchez, Dmitry Ovchinnikov, Shikhar Misra, Adrien Allain, Andras Kis

Abstract: The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devices, it is necessary to control and manipulate the charge density in these valleys, resulting in valley polarization. While this has been demonst… ▽ More The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate relying on the valley degree of freedom. To realize such valleytronic devices, it is necessary to control and manipulate the charge density in these valleys, resulting in valley polarization. While this has been demonstrated using optical excitation, generation of valley polarization in electronic devices without optical excitation remains difficult. Here, we demonstrate spin injection from a ferromagnetic electrode into a heterojunction based on monolayers of WSe2 and MoS2 and lateral transport of spin-polarized holes within the WSe2 layer. The resulting valley polarization leads to circularly polarized light emission which can be tuned using an external magnetic field. This demonstration of spin injection and magnetoelectronic control over valley polarization provides a new opportunity for realizing combined spin and valleytronic devices based on spin-valley locking in semiconducting TMDCs. △ Less

Submitted 5 September, 2016; originally announced September 2016.

Comments: in Nano Letters (2016)

High-frequency, scaled MoS2 transistors

Authors: Daria Krasnozhon, Subhojit Dutta, Clemens Nyffeler, Yusuf Leblebici, Andras Kis

Abstract: The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for electronic circuits based on 2D semiconductors on flexible and rigid substrates. Here, we present a systematic study of top-gated trilayer MoS2 RF transistors… ▽ More The interest in MoS2 for radio-frequency (RF) application has recently increased. However, little is known on the scaling behavior of transistors made from MoS2 for RF applications, which is important for establishing performance limits for electronic circuits based on 2D semiconductors on flexible and rigid substrates. Here, we present a systematic study of top-gated trilayer MoS2 RF transistors with gate lengths scaled down to 70 and 40 nm. In addition, by introducing edge-contacted injection of electrons in trilayer MoS2 devices, we decrease the contact resistance and as a result obtain the highest cutoff frequency of 6 GHz before the de-embedding procedure and 25 GHz after the de-embedding procedure. △ Less

Submitted 2 September, 2016; originally announced September 2016.

Comments: in Electron Devices Meeting (IEDM), 2015 IEEE International

Disorder engineering and conductivity dome in ReS2 with electrolyte gating

Authors: Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Allain, Diego José Pasquier, Dumitru Dumcenco, Ching-Hwa Ho, Oleg V. Yazyev, Andras Kis

Abstract: Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family of materials characterized by weak interlayer coupling and a distorted 1T structure. Here, we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating. We find that the conductivity of monolayer ReS2 is completely suppressed at high carrier densiti… ▽ More Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family of materials characterized by weak interlayer coupling and a distorted 1T structure. Here, we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating. We find that the conductivity of monolayer ReS2 is completely suppressed at high carrier densities, an unusual feature unique to monolayers, making ReS2 the first example of such a material. While thicker flakes of ReS2 also exhibit a conductivity dome and an insulator-metal-insulator sequence, they do not show a complete conductivity suppression at high doping densities. Using dual-gated devices, we can distinguish the gate-induced doping from the electrostatic disorder induced by the polymer electrolyte itself. Theoretical calculations and a transport model indicate that the observed conductivity suppression can be explained by a combination of a narrow conduction band and Anderson localization due to electrolyte-induced disorder. △ Less

Submitted 31 August, 2016; originally announced August 2016.

Comments: Submitted version

Journal ref: Nature Communications, 7, 12391 (2016)

Electroabsorption in MoS$_2$

Authors: Daniele Vella, Dmitry Ovchinnikov, Nicola Martino, Victor Vega-Mayoral, Dumitru Dumcenco, Yen-Chen Kung, Maria-Rosa Antognazza, Andras Kis, Guglielmo Lanzani, Dragan Mihailovic, Christoph Gadermaier

Abstract: To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark effect (QCSE), the field-induced red-shift and broadening of the strong excitonic absorption resonances characteristic of low-dimensional semiconductor structures.… ▽ More To translate electrical into optical signals one uses the modulation of either the refractive index or the absorbance of a material by an electric field. Contemporary electroabsorption modulators (EAMs) employ the quantum confined Stark effect (QCSE), the field-induced red-shift and broadening of the strong excitonic absorption resonances characteristic of low-dimensional semiconductor structures. Here we show an unprecedentedly strong transverse electroabsorption (EA) signal in a monolayer of the two-dimensional semiconductor MoS2. The EA spectrum is dominated by an apparent linewidth broadening of around 15% at a modulated voltage of only Vpp = 0.5 V. Contrary to the conventional QCSE, the signal increases linearly with the applied field strength and arises from a linear variation of the distance between the strongly overlapping exciton and trion resonances. The achievable modulation depths exceeding 0.1 dBnm-1 bear the scope for extremely compact, ultrafast, energy-efficient EAMs for integrated photonics, including on-chip optical communication. △ Less

Submitted 2 July, 2016; originally announced July 2016.

Journal ref: 2D Mater. 4 021005 (2017)

Magneto-excitons in large area CVD grown monolayer MoS$_{2}$ and MoSe$_{2}$ on sapphire

Authors: A. A. Mitioglu, K. Galkowski, A. Surrente, L. Klopotowski, D. Dumcenco, A. Kis, D. K. Maude, P. Plochocka

Abstract: Magneto transmission spectroscopy was employed to study the valley Zeeman effect in large-area monolayer MoS$_{2}$ and MoSe$_{2}$. The extracted values of the valley g-factors for both A- and B-exciton were found be similar with $g_v \simeq -4.5$. The samples are expected to be strained due to the CVD growth on sapphire at high temperature ($700^\circ$C). However, the estimated strain, which is ma… ▽ More Magneto transmission spectroscopy was employed to study the valley Zeeman effect in large-area monolayer MoS$_{2}$ and MoSe$_{2}$. The extracted values of the valley g-factors for both A- and B-exciton were found be similar with $g_v \simeq -4.5$. The samples are expected to be strained due to the CVD growth on sapphire at high temperature ($700^\circ$C). However, the estimated strain, which is maximum at low temperature, is only $\simeq 0.2\%$. Theoretical considerations suggest that the strain is too small to significantly influence the electronic properties. This is confirmed by the measured value of valley g-factor, and the measured temperature dependence of the band gap, which are almost identical for CVD and mechanically exfoliated MoS$_2$. △ Less

Submitted 12 April, 2016; v1 submitted 3 February, 2016; originally announced February 2016.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 93, 165412 (2016)

High Responsivity, Large-Area Graphene/MoS2 Flexible Photodetectors

Authors: D. De Fazio, I. Goykhman, M. Bruna, A. Eiden, S. Milana, D. Yoon, U. Sassi, M. Barbone, D. Dumcenco, K. Marinov, A. Kis, A. C. Ferrari

Abstract: We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5… ▽ More We present flexible photodetectors (PDs) for visible wavelengths fabricated by stacking centimetre-scale chemical vapour deposited (CVD) single layer graphene (SLG) and single layer CVD MoS2, both wet transferred onto a flexible polyethylene terephthalate substrate. The operation mechanism relies on injection of photoexcited electrons from MoS2 to the SLG channel. The external responsivity is 45.5A/W and the internal 570A/W at 642nm. This is at least two orders of magnitude higher than bulk-semiconductor flexible membranes and other flexible PDs based on graphene and layered materials. The photoconductive gain is up to 4x10^5. The photocurrent is in the 0.1-100 uA range. The devices are semi-transparent, with just 8% absorption at 642nm and work stably upon bending to a curvature of 6cm. These capabilities and the low voltage operation (<1V) make them attractive for wearable applications. △ Less

Submitted 27 December, 2015; originally announced December 2015.

Journal ref: ACS Nano, 10, 8252 (2016)

Electromechanical Oscillations in Bilayer Graphene

Authors: Muhammed Malik Benameur, Fernando Gargiulo, Sajedeh Manzeli, Gabriel Autes, Mahmut Tosun, Oleg V. Yazyev, Andras Kis

Abstract: Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this… ▽ More Nanoelectromechanical systems (NEMS) constitute a class of devices lying at the interface between fundamental research and technological applications. Integrating novel materials such as graphene into NEMS allows studying their mechanical and electromechanical characteristics at the nanoscale and addressing fundamental questions such as electron-phonon interaction and bandgap engineering. In this work, we integrate single and bilayer graphene into NEMS and probe the interplay between their mechanical and electrical properties. We show that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance. Surprisingly, we observe oscillations in the electromechanical response of bilayer graphene. The proposed theoretical model suggests that these oscillations arise from quantum mechanical interference taking place due to the lateral displacement of graphene layers with respect to each other. Our work shows that bilayer graphene conceals unexpectedly rich and novel physics with promising potential in NEMS-based applications. △ Less

Submitted 30 October, 2015; originally announced November 2015.

Comments: First three authors contributed equally

Journal ref: Nature Communications 6, 8582 (2015)

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Authors: Sajedeh Manzeli, Adrien Allain, Amirhossein Ghadimi, Andras Kis

Abstract: The bandgap of MoS2 is highly strain-tunable which results in the modulation of its electrical conductivity and manifests itself as the piezoresistive effect while a piezoelectric effect was also observed in odd-layered MoS2 with broken inversion symmetry. This coupling between electrical and mechanical properties makes MoS2 a very promising material for nanoelectromechanical systems (NEMS). Here… ▽ More The bandgap of MoS2 is highly strain-tunable which results in the modulation of its electrical conductivity and manifests itself as the piezoresistive effect while a piezoelectric effect was also observed in odd-layered MoS2 with broken inversion symmetry. This coupling between electrical and mechanical properties makes MoS2 a very promising material for nanoelectromechanical systems (NEMS). Here we incorporate monolayer, bilayer and trilayer MoS2 in a nanoelectromechanical membrane configuration. We detect strain-induced band gap tuning via electrical conductivity measurements and demonstrate the emergence of the piezoresistive effect in MoS2. Finite element method (FEM) simulations are used to quantify the band gap change and to obtain a comprehensive picture of the spatially varying bandgap profile on the membrane. The piezoresistive gauge factor is calculated to be -148 +/- 19, -224 +/- 19 and -43.5 +/- 11 for monolayer, bilayer and trilayer MoS2 respectively which is comparable to state-of-the-art silicon strain sensors and two orders of magnitude higher than in strain sensors based on suspended graphene. Controllable modulation of resistivity in 2D nanomaterials using strain-induced bandgap tuning offers a novel approach for implementing an important class of NEMS transducers, flexible and wearable electronics, tuneable photovoltaics and photodetection. △ Less

Submitted 21 July, 2015; originally announced July 2015.

Comments: 12 pages, 4 figures in Nano Letters (2015)

Identification of single nucleotides in MoS2 nanopores

Authors: Jiandong Feng, Ke Liu, Roman D. Bulushev, Sergey Khlybov, Dumitru Dumcenco, Andras Kis, Aleksandra Radenovic

Abstract: Ultrathin membranes have drawn much attention due to their unprecedented spatial resolution for DNA nanopore sequencing. However, the high translocation velocity (3000-50000 nt/ms) of DNA molecules moving across such membranes limits their usability. To this end, we have introduced a viscosity gradient system based on room-temperature ionic liquids (RTILs) to control the dynamics of DNA translocat… ▽ More Ultrathin membranes have drawn much attention due to their unprecedented spatial resolution for DNA nanopore sequencing. However, the high translocation velocity (3000-50000 nt/ms) of DNA molecules moving across such membranes limits their usability. To this end, we have introduced a viscosity gradient system based on room-temperature ionic liquids (RTILs) to control the dynamics of DNA translocation through a nanometer-size pore fabricated in an atomically thin MoS2 membrane. This allows us for the first time to statistically identify all four types of nucleotides with solid state nanopores. Nucleotides are identified according to the current signatures recorded during their transient residence in the narrow orifice of the atomically thin MoS2 nanopore. In this novel architecture that exploits high viscosity of RTIL, we demonstrate single-nucleotide translocation velocity that is an optimal speed (1-50 nt/ms) for DNA sequencing, while keeping the signal to noise ratio (SNR) higher than 10. Our findings pave the way for future low-cost and rapid DNA sequencing using solid-state nanopores. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: Manuscript 24 pages, 4 Figures Supporting Information 24 pages, 12 Figures, 2 Tables Manuscript in review Nature Nanotechnology since May 27th 2014

Electrochemical reaction in single layer MoS2: nanopores opened atom by atom

Authors: J. Feng, K. Liu, M. Graf, M. Lihter, R. D. Bulushev, D. Dumcenco, D. T. L. Alexander, D. Krasnozhon, T. Vuletic, A. Kis, A. Radenovic

Abstract: Ultrathin nanopore membranes based on 2D materials have demonstrated ultimate resolution toward DNA sequencing. Among them, molybdenum disulphide (MoS2) shows long-term stability as well as superior sensitivity enabling high throughput performance. The traditional method of fabricating nanopores with nanometer precision is based on the use of focused electron beams in transmission electron microsc… ▽ More Ultrathin nanopore membranes based on 2D materials have demonstrated ultimate resolution toward DNA sequencing. Among them, molybdenum disulphide (MoS2) shows long-term stability as well as superior sensitivity enabling high throughput performance. The traditional method of fabricating nanopores with nanometer precision is based on the use of focused electron beams in transmission electron microscope (TEM). This nanopore fabrication process is time-consuming, expensive, not scalable and hard to control below 1 nm. Here, we exploited the electrochemical activity of MoS2 and developed a convenient and scalable method to controllably make nanopores in single-layer MoS2 with sub-nanometer precision using electrochemical reaction (ECR). The electrochemical reaction on the surface of single-layer MoS2 is initiated at the location of defects or single atom vacancy, followed by the successive removals of individual atoms or unit cells from single-layer MoS2 lattice and finally formation of a nanopore. Step-like features in the ionic current through the growing nanopore provide direct feedback on the nanopore size inferred from a widely used conductance vs. pore size model. Furthermore, DNA translocations can be detected in-situ when as-fabricated MoS2 nanopores are used. The atomic resolution and accessibility of this approach paves the way for mass production of nanopores in 2D membranes for potential solid-state nanopore sequencing. △ Less

Submitted 20 April, 2015; originally announced April 2015.

Comments: 13 pages, 4 figures

Hot flow anomaly remnant in the far geotail?

Authors: Gábor Facskó, Andrea Opitz, Benoit Lavraud, Janet G. Luhmann, Christopher T. Russell, Jean-Andre Sauvaud, Andrei Fedorov, Árpád Kis, Viktor Wesztergom

Abstract: A hot flow anomaly (HFA) like event was observed by the Solar TErrestrial RElations Observatory (STEREO) in the night side magnetosheath in the far tail in February-March 2007. The magnetic signature of the tangential discontinuity was visible, but the resolution of the plasma ion data is not sufficient for our analysis, so a method is given to identify HFAs without solar wind velocity measurement… ▽ More A hot flow anomaly (HFA) like event was observed by the Solar TErrestrial RElations Observatory (STEREO) in the night side magnetosheath in the far tail in February-March 2007. The magnetic signature of the tangential discontinuity was visible, but the resolution of the plasma ion data is not sufficient for our analysis, so a method is given to identify HFAs without solar wind velocity measurements. The event observed in the night side magnetosheath in the far tail might be the remnant of an HFA event, a not-so-active current sheet. This observation suggests that the lifetime of the HFAs might be several 10 minutes, much longer than the expected several minutes. △ Less

Submitted 4 February, 2015; originally announced February 2015.

Comments: accepted on January 23, 2015 to Journal of Atmospheric and Solar-Terrestrial Physics. 5 pages, 2 figures

Avalanche photodiodes based on MoS2/Si heterojunctions

Authors: Oriol Lopez-Sanchez, Dumitru Dumcenco, Edoardo Charbon, Andras Kis

Abstract: Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2, biological imaging3, and medical imaging4 where they offer speed and sensitivity superior to those of classical p-n junction-based photodetectors. The APD principle… ▽ More Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2, biological imaging3, and medical imaging4 where they offer speed and sensitivity superior to those of classical p-n junction-based photodetectors. The APD principle of operation is based on photocurrent multiplication through impact ionization in reverse-biased p-n junctions. APDs can either operate in proportional mode, where the bias voltage is below breakdown, or in Geiger mode, where the bias voltage is above breakdown. In proportional mode, the multiplication gain is finite, thus allowing for photon energy discrimination, while in Geiger mode of operation the multiplication gain is virtually infinite and a self-sustaining avalanche may be triggered, thus allowing detection of single photons5. Here, we demonstrate APDs based on vertically stacked monolayer MoS2 and p-Si, forming an abrupt p-n heterojunction. With this device, we demonstrate carrier multiplication exceeding 1000. Even though such multiplication factors in APDs are commonly accompanied by high noise, our devices show extremely low noise levels comparable with those in regular photodiodes. These heterostructures allow the realization of simple and inexpensive high-performance and low-noise photon counters based on transition metal dichalcogenides. △ Less

Submitted 12 November, 2014; originally announced November 2014.

Optically Active Quantum Dots in Monolayer WSe$_2$

Authors: Ajit Srivastava, Meinrad Sidler, Adrien V. Allain, Dominik S. Lembke, Andras Kis, Atac Imamoglu

Abstract: Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meanwhile, transition metal dichalcogenide (TMD) monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large band ga… ▽ More Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meanwhile, transition metal dichalcogenide (TMD) monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large band gap with degenerate valleys and non-zero Berry curvature. Here we report the observation of quantum dots in monolayer tungsten-diselenide with an energy that is 20 to 100 meV lower than that of two dimensional excitons. Photon antibunching in second-order photon correlations unequivocally demonstrates the zero-dimensional anharmonic nature of these quantum emitters. The strong anisotropic magnetic response of the spatially localized emission peaks strongly indicates that radiative recombination stems from localized excitons that inherit their electronic properties from the host TMD. The large $\sim$ 1 meV zero-field splitting shows that the quantum dots have singlet ground states and an anisotropic confinement most likely induced by impurities or defects in the host TMD. Electrical control in van der Waals heterostructures and robust spin-valley degree of freedom render TMD quantum dots promising for quantum information processing. △ Less

Submitted 31 October, 2014; originally announced November 2014.

MoS2 Transistors Operating at Gigahertz Frequencies

Authors: Daria Krasnozhon, Dominik Lembke, Clemens Nyffeler, Yusuf Leblebici, Andras Kis

Abstract: The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, logic circuits and optoelectronic devices have been demonstrated using u… ▽ More The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, logic circuits and optoelectronic devices have been demonstrated using ultrathin MoS2, very little is known about their performance at high frequencies where commercial devices are expected to function. Here, we report on top-gated MoS2 transistors operating in the gigahertz range of frequencies. Our devices show cutoff frequencies reaching 6 GHz. The presence of a band gap also gives rise to current saturation, allowing power and voltage gain, all in the gigahertz range. This shows that MoS2 could be an interesting material for realizing high-speed amplifiers and logic circuits with device scaling expected to result in further improvement of performance. Our work represents the first step in the realization of high-frequency analog and digital circuits based on two-dimensional semiconductors. △ Less

Submitted 23 September, 2014; originally announced September 2014.

Comments: Nano Letters (2014), Supplementary information available at http://dx.doi.org/10.1021/nl5028638

Electrical Transport Properties of Single-Layer WS2

Authors: Dmitry Ovchinnikov, Adrien Allain, Ying-Sheng Huang, Dumitru Dumcenco, Andras Kis

Abstract: We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment and that long in-situ annealing drastically improves the contact transparency allowing four-terminal measurements to be performed and the pristine prope… ▽ More We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We find that the doping level strongly depends on the device environment and that long in-situ annealing drastically improves the contact transparency allowing four-terminal measurements to be performed and the pristine properties of the material to be recovered. Our devices show n-type behavior with high room-temperature on/off current ratio of ~106. They show clear metallic behavior at high charge carrier densities and mobilities as high as ~140 cm2/Vs at low temperatures (above 300 cm2/Vs in the case of bi-layers). In the insulating regime, the devices exhibit variable-range hopping, with a localization length of about 2 nm that starts to increase as the Fermi level enters the conduction band. The promising electronic properties of WS2, comparable to those of single-layer MoS2 and WSe2, together with its strong spin-orbit coupling, make it interesting for future applications in electronic, optical and valleytronic devices. △ Less

Submitted 21 August, 2014; originally announced August 2014.

Journal ref: ACS Nano (2014) doi:10.1021/nn502362b

Electron and Hole Mobilities in Single-Layer WSe2

Authors: Adrien Allain, Andras Kis

Abstract: Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels it is intrinsic and shows ambipolar transport. This opens up the possibility to realize devices with the Fermi level located in valence band, where the spin/valley coupling is strong and leads to new and interesting phys… ▽ More Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels it is intrinsic and shows ambipolar transport. This opens up the possibility to realize devices with the Fermi level located in valence band, where the spin/valley coupling is strong and leads to new and interesting physics. As a consequence of its intrinsically low doping, large Schottky barriers form between WSe2 and metal contacts, which impede the injection of charges at low temperatures. Here, we report on the study of single-layer WSe2 transistors with a polymer electrolyte gate (PEO:LiClO4). Polymer electrolytes allow the charge carrier densities to be modulated to very high values, allowing the observation of both the electron- and the hole-doped regimes. Moreover, our ohmic contacts formed at low temperatures allow us to study the temperature dependence of electron and hole mobilities. At high electron densities, a re-entrant insulating regime is also observed, a feature which is absent at high hole densities. △ Less

Submitted 17 July, 2014; originally announced July 2014.

Comments: ACS Nano (2014)