Showing 1–49 of 49 results for author: Kriegner, D

Detecting slow magnetization relaxation via magnetotransport measurements based on the current-reversal method

Authors: Sebastian Beckert, Richard Schlitz, Gregor Skobjin, Antonin Badura, Miina Leiviskä, Dominik Kriegner, Daniel Scheffler, Giacomo Sala, Kamil Olejník, Lisa Michez, Vincent Baltz, Andy Thomas, Helena Reichlová, Sebastian T. B. Goennenwein

Abstract: Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model sy… ▽ More Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in τたう -MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particulary sensitive to relaxation processes with relaxation time scales on the order of seconds, comparable to the current-reversal measurement time scales. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Altermagnetism imaged and controlled down to the nanoscale

Authors: O. J. Amin, A. Dal Din, E. Golias, Y. Niu, A. Zakharov, S. C. Fromage, C. J. B. Fields, S. L. Heywood, R. B. Cousins, J. Krempasky, J. H. Dil, D. Kriegner, B. Kiraly, R. P. Campion, A. W. Rushforth, K. W. Edmonds, S. S. Dhesi, L. Šmejkal, T. Jungwirth, P. Wadley

Abstract: Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominen… ▽ More Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominent phases ranging from superconductors to topological insulators, as well as on spintronic device scalability. Recently, altermagnetism has been proposed as a solution to this restriction, since it shares the enabling $\cal{T}$-symmetry breaking characteristic of ferromagnetism, combined with the antiferromagnetic-like vanishing net-magnetization. To date, altermagnetic ordering has been inferred from spatially averaged probes. Here, we demonstrate nanoscale imaging and control of altermagnetic ordering ranging from nanoscale vortices to domain walls to microscale single-domain states in MnTe. We combine the $\cal{T}$-symmetry breaking sensitivity of X-ray magnetic circular dichroism with magnetic linear dichroism and photoemission electron microscopy, to achieve detailed imaging of the local altermagnetic ordering vector. A rich variety of spin configurations can be imposed using microstructure patterning or thermal cycling in magnetic fields. The demonstrated detection and control of altermagnetism paves the way for future research ranging from ultra-scalable digital and neuromorphic spintronic devices, to the interplay of altermagnetism with non-dissipative superconducting or topological phases. △ Less

Submitted 3 May, 2024; originally announced May 2024.

Comments: 17 pages, 3 figures

Anisotropic magnetoresistance in altermagnetic MnTe

Authors: Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf, Philipp Ritzinger, Barbora Růžičková, Tommy Kotte, Jakub Železný, Kamil Olejník, Gunther Springholz, Bernd Büchner, Andy Thomas, Karel Výborný, Tomas Jungwirth, Helena Reichlová, Dominik Kriegner

Abstract: Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical res… ▽ More Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

Authors: Antonin Badura, Warlley H. Campos, Venkata K. Bharadwaj, Ismaïla Kounta, Lisa Michez, Matthieu Petit, Javier Rial, Miina Leiviskä, Vincent Baltz, Filip Krizek, Dominik Kriegner, Jan Zemen, Sjoerd Telkamp, Sebastian Sailler, Michaela Lammel, Rodrigo Jaeschke Ubiergo, Anna Birk Hellenes, Rafael González-Hernández, Jairo Sinova, Tomáš Jungwirth, Sebastian T. B. Goennenwein, Libor Šmejkal, Helena Reichlova

Abstract: The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the… ▽ More The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations. △ Less

Submitted 19 March, 2024; originally announced March 2024.

The effect of niobium thin film structure on losses in superconducting circuits

Authors: Maxwell Drimmer, Sjoerd Telkamp, Felix L. Fischer, Ines C. Rodrigues, Clemens Todt, Filip Krizek, Dominik Kriegner, Christoph Müller, Werner Wegscheider, Yiwen Chu

Abstract: The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the… ▽ More The performance of superconducting microwave circuits is strongly influenced by the material properties of the superconducting film and substrate. While progress has been made in understanding the importance of surface preparation and the effect of surface oxides, the complex effect of superconductor film structure on microwave losses is not yet fully understood. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over one million at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasiparticle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Our results stress the connection between the crystal structure of superconducting films and the loss mechanisms suffered by the resonators and demonstrate that even a moderate change in temperature during thin film deposition can significantly affect the resulting quality factors. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition

Authors: M. Hajlaoui, S. W. D'Souza, L. Šmejkal, D. Kriegner, G. Krizman, T. Zakusylo, N. Olszowska, O. Caha, J. Michalička, A. Marmodoro, K. Výborný, A. Ernst, M. Cinchetti, J. Minar, T. Jungwirth, G. Springholz

Abstract: Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a nov… ▽ More Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting have been documented within the framework of the non-relativistic spin group symmetry, there has been limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, alpha-MnTe. Employing temperature-dependent angle-resolved photoelectron spectroscopy across the AM phase transition, we elucidate the emergence of a relativistic valence band splitting concurrent with the establishment of magnetic order. This discovery is validated through disordered local moment calculations, modeling the influence of magnetic order on the electronic structure and confirming the magnetic origin of the observed splitting. The temperature-dependent splitting is ascribed to the advent of relativistic spin-splitting resulting from the strengthening of AM order in alpha-MnTe as the temperature decreases. This sheds light on a previously unexplored facet of this intriguing material. △ Less

Submitted 14 June, 2024; v1 submitted 17 January, 2024; originally announced January 2024.

Anisotropy of the anomalous Hall effect in the altermagnet candidate Mn$_5$Si$_3$ films

Authors: Miina Leiviskä, Javier Rial, Antonín Badura, Rafael Lopes Seeger, Ismaïla Kounta, Sebastian Beckert, Dominik Kriegner, Isabelle Joumard, Eva Schmoranzerová, Jairo Sinova, Olena Gomonay, Andy Thomas, Sebastian T. B. Goennenwein, Helena Reichlová, Libor Šmejkal, Lisa Michez, Tomáš Jungwirth, Vincent Baltz

Abstract: Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rota… ▽ More Altermagnets are compensated magnets belonging to spin symmetry groups that allow alternating spin polarizations both in the coordinate space of the crystal and in the momentum space of the electronic structure. In these materials the anisotropic local crystal environment of the different sublattices lowers the symmetry of the system so that the opposite-spin sublattices are connected only by rotations, which results in an unconventional spin-polarized band structure in the momentum space. This low symmetry of the crystal structure is expected to be reflected in the anisotropy of the anomalous Hall effect. In this work, we study the anisotropy of the anomalous Hall effect in epitaxial thin films of Mn$_5$Si$_3$, an altermagnetic candidate material. We first demonstrate a change in the relative Néel vector orientation when rotating the external field orientation through systematic changes in both the anomalous Hall effect and the anisotropic longitudinal magnetoresistance. We then show that the anomalous Hall effect in this material is anisotropic with the Néel vector orientation relative to the crystal structure and that this anisotropy requires high crystal quality and unlikely correlates with the magnetocrystalline anisotropy. Our results provide further systematic support to the case for considering epitaxial thin films of Mn$_5$Si$_3$ as an altermagnetic candidate material. △ Less

Submitted 4 January, 2024; originally announced January 2024.

Even-in-magnetic-field part of transverse resistivity as a probe of magnetic order

Authors: Antonin Badura, Dominik Kriegner, Eva Schmoranzerová, Karel Výborný, Miina Leiviskä, Rafael Lopes Seeger, Vincent Baltz, Daniel Scheffler, Sebastian Beckert, Ismaila Kounta, Lisa Michez, Libor Šmejkal, Jairo Sinova, Sebastian T. B. Goennenwein, Jakub Železný, Helena Reichlová

Abstract: The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρろー_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effec… ▽ More The detection of a voltage transverse to both an applied current and a magnetic field is one of the most common characterization techniques in solid-state physics. The corresponding component of the resistivity tensor $ρろー_{ij}$ can be separated into odd and even parts with respect to the applied magnetic field. The former contains information, for example, about the ordinary or anomalous Hall effect. The latter is typically ascribed to experimental artefacts and ignored. We here show that upon suppressing these artefacts in carefully controlled experiments, useful information remains. We first investigate the well-explored ferromagnet CoFeB, where the even part of $ρろー_{yx}$ contains a contribution from the anisotropic magnetoresistance, which we confirm by Stoner-Wohlfarth modelling. We then apply our approach to magnetotransport measurements in $\rm Mn_5Si_3$ thin films with a complex compensated magnetic order. In this material, the even part of the transverse signal is sizable only in the low-spin-symmetry phase below $\approx 80$ K and thus offers a simple and readily available probe of the magnetic order. △ Less

Submitted 24 November, 2023; originally announced November 2023.

Comments: 18 pages, 5 figures

Anomalous Hall effect and magnetoresistance in micro-ribbons of the magnetic Weyl semimetal candidate PrRhC2

Authors: Mickey Martini, Helena Reichlova, Laura T. Corredor, Dominik Kriegner, Yejin Lee, Luca Tomarchio, Kornelius Nielsch, Ali G. Moghaddam, Jeroen van den Brink, Bernd Büchner, Sabine Wurmehl, Vitaliy Romaka, Andy Thomas

Abstract: PrRhC2 belongs to the rare-earth carbides family whose properties are of special interest among topological semimetals due to the simultaneous breaking of both inversion and time-reversal symmetry. The concomitant absence of both symmetries grants the possibility to tune the Weyl nodes chirality and to enhance topological effects like the chiral anomaly. In this work, we report on the synthesis an… ▽ More PrRhC2 belongs to the rare-earth carbides family whose properties are of special interest among topological semimetals due to the simultaneous breaking of both inversion and time-reversal symmetry. The concomitant absence of both symmetries grants the possibility to tune the Weyl nodes chirality and to enhance topological effects like the chiral anomaly. In this work, we report on the synthesis and compare the magnetotransport measurements of a poly- and single crystalline PrRhC2 sample. Using a remarkable and sophisticated technique, the PrRhC2 single crystal is prepared via focused ion beam cutting from the polycrystalline material. Our magnetometric and specific heat analyses reveal a non-collinear antiferromagnetic state below 20K, as well as short-range magnetic correlations and/or magnetic fluctuations well above the onset of the magnetic transition. The transport measurements on the PrRhC2 single crystal display an electrical resistivity peak at 3K and an anomalous Hall effect below 6K indicative of a net magnetization component in the ordered state. Furthermore, we study the angular variation of magnetoresistivities as a function of the angle between the in-plane magnetic field and the injected electrical current. We find that both the transverse and the longitudinal resistivities exhibit fourfold angular dependencies due to higher-order terms in the resistivity tensor, consistent with the orthorhombic crystal symmetry of PrRhC2. Our experimental results may be interpreted as features of topological Weyl semimetallic behavior in the magnetotransport properties. △ Less

Submitted 13 September, 2023; originally announced September 2023.

Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2

Authors: Teresa Tschirner, Philipp Keßler, Ruben Dario Gonzalez Betancourt, Tommy Kotte, Dominik Kriegner, Bernd Buechner, Joseph Dufouleur, Martin Kamp, Vedran Jovic, Libor Smejkal, Jairo Sinova, Ralph Claessen, Tomas Jungwirth, Simon Moser, Helena Reichlova, Louis Veyrat

Abstract: Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in Ru… ▽ More Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO$_2$ is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO$_2$ thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field $H_{\rm c} \simeq$ 55 T that was inaccessible in earlier studies, but is consistent with the expected Néel-vector reorientation field. △ Less

Submitted 1 September, 2023; originally announced September 2023.

Comments: 4 figures

Journal ref: APL Mater. 11, 101103 (2023)

Altermagnetic lifting of Kramers spin degeneracy

Authors: J. Krempaský, L. Šmejkal, S. W. D'Souza, M. Hajlaoui, G. Springholz, K. Uhlířová, F. Alarab, P. C. Constantinou, V. Strokov, D. Usanov, W. R. Pudelko, R. González-Hernández, A. Birk Hellenes, Z. Jansa, H. Reichlová, Z. Šobáň, R. D. Gonzalez Betancourt, P. Wadley, J. Sinova, D. Kriegner, J. Minár, J. H. Dil, T. Jungwirth

Abstract: Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal… ▽ More Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets. △ Less

Submitted 21 August, 2023; originally announced August 2023.

X-ray Magnetic Circular Dichroism in Altermagnetic $αあるふぁ$-MnTe

Authors: A. Hariki, A. Dal Din, O. J. Amin, T. Yamaguchi, A. Badura, D. Kriegner, K. W. Edmonds, R. P. Campion, P. Wadley, D. Backes, L. S. I. Veiga, S. S. Dhesi, G. Springholz, L. Šmejkal, K. Výborný, T. Jungwirth, J. Kuneš

Abstract: Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dich… ▽ More Altermagnetism is a recently identified magnetic symmetry class combining characteristics of conventional collinear ferromagnets and antiferromagnets, that were regarded as mutually exclusive, and enabling phenomena and functionalities unparalleled in either of the two traditional elementary magnetic classes. In this work we use symmetry and ab initio theory to explore X-ray magnetic circular dichroism (XMCD) in the altermagnetic class. Our results highlight the distinct phenomenology in altermagnets of this time-reversal symmetry breaking response, and its potential utility for element-specific spectroscopy and microscopy in altermagnets. As a representative material for our XMCD study we choose $αあるふぁ$-MnTe with the compensated antiparallel magnetic order in which an anomalous Hall effect has been already demonstrated both in theory and experiment. The predicted magnitude of XMCD lies well within the resolution of existing experimental techniques. △ Less

Submitted 1 February, 2024; v1 submitted 5 May, 2023; originally announced May 2023.

Comments: Experimental data added

Journal ref: Phys. Rev. Lett. 132, 176701 (2024)

Magnetic domain engineering in antiferromagnetic CuMnAs and Mn$_2$Au devices

Authors: Sonka Reimers, Olena Gomonay, Oliver J. Amin, Filip Krizek, Luke X. Barton Yaryna Lytvynenko, Stuart Poole, Richard P. Campion, Vit Novák, Francesco Maccherozzi, Dina Carbone, Alexander Björling, Yuran Niu, Evangelos Golias, Dominik Kriegner, Jairo Sinova, Mathias Kläui, Martin Jourdan, Sarnjeet S. Dhesi, Kevin W. Edmonds, Peter Wadley

Abstract: Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here,… ▽ More Antiferromagnetic materials hold potential for use in spintronic devices with fast operation frequencies and field robustness. Despite the rapid progress in proof-of-principle functionality in recent years, there has been a notable lack of understanding of antiferromagnetic domain formation and manipulation, which translates to either incomplete or non-scalable control of the magnetic order. Here, we demonstrate simple and functional ways of influencing the domain structure in CuMnAs and Mn2Au, two key materials of antiferromagnetic spintronics research, using device patterning and strain engineering. Comparing x-ray microscopy data from two different materials, we reveal the key parameters dictating domain formation in antiferromagnetic devices and show how the non-trivial interaction of magnetostriction, substrate clamping and edge anisotropy leads to specific equilibrium domain configurations. More specifically, we observe that patterned edges have a significant impact on the magnetic anisotropy and domain structure over long distances, and we propose a theoretical model that relates short-range edge anisotropy and long-range magnetoelastic interactions. The principles invoked are of general applicability to the domain formation and engineering in antiferromagnetic thin films at large, which will pave the way towards realizing truly functional antiferromagnetic devices. △ Less

Submitted 17 April, 2023; v1 submitted 19 February, 2023; originally announced February 2023.

Comments: 31 pages, 7 figures

Probing magnetic properties at the nanoscale: In-situ Hall measurements in a TEM

Authors: Darius Pohl, Yejin Lee, Dominik Kriegner, Sebastian Beckert, Sebastian Schneider, Bernd Rellinghaus, Andy Thomas

Abstract: We report on advanced in-situ magneto-transport measurements in a transmission electron microscope. The approach allows for concurrent magnetic imaging and high resolution structural and chemical characterization of the same sample. Proof-of-principle in-situ Hall measurements on presumably undemanding nickel thin films supported by micromagnetic simulations reveal that in samples with non-trivial… ▽ More We report on advanced in-situ magneto-transport measurements in a transmission electron microscope. The approach allows for concurrent magnetic imaging and high resolution structural and chemical characterization of the same sample. Proof-of-principle in-situ Hall measurements on presumably undemanding nickel thin films supported by micromagnetic simulations reveal that in samples with non-trivial structures and/or compositions, detailed knowledge of the latter is indispensable for a thorough understanding and reliable interpretation of the magneto-transport data. The proposed in-situ approach is thus expected to contribute to a better understanding of the Hall signatures in more complex magnetic textures. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Collective topological spin dynamics in a correlated spin glass

Authors: Juraj Krempaský, Gunther Springholz, Sunil Wilfred D'Souza, Ondřej Caha, Martin Gmitra, Andreas Ney, Carlos Antonio Fernandez Vaz, Cinthia Piamonteze, Mauro Fanciulli, Dominik Kriegner, Jonas A. Krieger, Thomas Prokscha, Zaher Salman, Jan Minár, J. Hugo Dil

Abstract: The interplay between spin-orbit interaction (SOI) and magnetic order is currently one of the most active research fields in condensed matter physics and leading the search for materials with novel and tunable magnetic and spin properties. Here we report on a variety of unexpected and unique observations in thin multiferroic \Ge$_{1-x}$Mn$_x$Te films. The ferrimagnetic order in this ferroelectric… ▽ More The interplay between spin-orbit interaction (SOI) and magnetic order is currently one of the most active research fields in condensed matter physics and leading the search for materials with novel and tunable magnetic and spin properties. Here we report on a variety of unexpected and unique observations in thin multiferroic \Ge$_{1-x}$Mn$_x$Te films. The ferrimagnetic order in this ferroelectric semiconductor is found to reverse with current pulses six orders of magnitude lower as for typical spin-orbit torque systems. Upon a switching event, the magnetic order spreads coherently and collectively over macroscopic distances through a correlated spin-glass state. Lastly, we present a novel methodology to controllably harness this stochastic magnetization dynamics, allowing us to detect spatiotemporal nucleation of topological spin textures we term ``skyrmiverres''. △ Less

Submitted 23 December, 2022; originally announced December 2022.

Comments: 26 pages, 10 figures, 2 tables

Journal ref: Nature Communications 14, 6127 (2023)

Anomalous Nernst effect in Mn$_3$NiN thin films

Authors: Sebastian Beckert, João Godinho, Freya Johnson, Jozef Kimák, Eva Schmoranzerová, Jan Zemen, Zbyněk Šobáň, Kamil Olejník, Jakub Železný, Joerg Wunderlich, Petr Němec, Dominik Kriegner, Andy Thomas, Sebastian T. B. Goennenwein, Lesley F Cohen, Helena Reichlová

Abstract: The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect… ▽ More The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor

Authors: R. D. Gonzalez Betancourt, J. Zubáč, R. J. Gonzalez-Hernandez, K. Geishendorf, Z. Šobáň, G. Springholz, K. Olejník, L. Šmejkal, J. Sinova, T. Jungwirth, S. T. B. Goennenwein, A. Thomas, H. Reichlová, J. Železný, D. Kriegner

Abstract: The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a colli… ▽ More The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect. △ Less

Submitted 23 January, 2023; v1 submitted 13 December, 2021; originally announced December 2021.

Comments: 34 pages, 14 figures

Journal ref: Phys. Rev. Lett. 130, 036702 (2023)

Thermally induced all-optical ferromagnetic resonance in thin YIG films

Authors: E. Schmoranzerová, J. Kimák, R. Schlitz, S. T. B. Goennenwein, D. Kriegner, H. Reichlová, Z. Šobáň, G. Jakob, E. -J. Guo, M. Kläui, M. Münzenberg, P. Němec, T. Ostatnický

Abstract: All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert damping or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic capping layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heatin… ▽ More All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert damping or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic capping layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heating of the metallic layer with femtosecond laser pulses. The heating modifies the magneto-crystalline anisotropy of the YIG film and shifts the quasi-equilibrium orientation of magnetization, which results in precessional magnetization dynamics. The laser-induced magnetization precession corresponds to a uniform (Kittel) magnon mode, with the precession frequency determined by the magnetic anisotropy of the material as well as the external magnetic field, and the damping time set by a Gilbert damping parameter. The AO-FMR method thus enables measuring local magnetic properties, with spatial resolution given only by the laser spot size. △ Less

Submitted 31 October, 2021; originally announced November 2021.

Giant quadratic magneto-optical response of thin YIG films for sensitive magnetometric experiments

Authors: E. Schmoranzerová, T. Ostatnický, J. Kimák, D. Kriegner, H. Reichlová, R. Schlitz, A. Baďura, Z. Šobáň, M. Münzenberg, G. Jakob, E. -J. Guo, M. Kläui, P. Němec

Abstract: We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response,… ▽ More We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response, reaching values of 450 urad that are comparable with Heusler alloys or ferromagnetic semiconductors. Furthermore, we demonstrate that a proper choice of experimental conditions, particularly with respect to the wavelength, is crucial for optimization of the quadratic magneto-optical effect for magnetometry measurement. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Defect-driven antiferromagnetic domain walls in CuMnAs films

Authors: Sonka Reimers, Dominik Kriegner, Olena Gomonay, Dina Carbone, Filip Krizek, Vit Novak, Richard P. Campion, Francesco Maccherozzi, Alexander Bjorling, Oliver J. Amin, Luke X. Barton, Stuart F. Poole, Khalid A. Omari, Jan Michalicka, Ondrej Man, Jairo Sinova, Tomas Jungwirth, Peter Wadley, Sarnjeet S. Dhesi, Kevin W. Edmonds

Abstract: Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microsco… ▽ More Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance. △ Less

Submitted 7 October, 2021; originally announced October 2021.

Macroscopic time reversal symmetry breaking by staggered spin-momentum interaction

Authors: Helena Reichlová, Rafael Lopes Seeger, Rafael González-Hernández, Ismaila Kounta, Richard Schlitz, Dominik Kriegner, Philipp Ritzinger, Michaela Lammel, Miina Leiviskä, Václav Petříček, Petr Doležal, Eva Schmoranzerová, Antonín Bad'ura, Andy Thomas, Vincent Baltz, Lisa Michez, Jairo Sinova, Sebastian T. B. Goennenwein, Tomáš Jungwirth, Libor Šmejkal

Abstract: Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Aniso… ▽ More Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Anisotropic electron interactions, on the other hand, have been a domain of correlated quantum phases, such as the T-invariant nematics or unconventional superconductors. Here we report discovery of a broken-T phase of itinerant Bloch electrons with an unconventional anisotropic spin-momentum interaction, whose staggered nature leads to the formation of two ferromagnetic-like valleys in the momentum space with opposite spin splittings. We describe qualitatively the effect by deriving a non-relativistic single-particle Hamiltonian model. Next, we identify the unconventional staggered spin-momentum interaction by first-principles electronic structure calculations in a four-sublattice antiferromagnet Mn5Si3 with a collinear checkerboard magnetic order. We show that the staggered spin-momentum interaction is set by nonrelativistic spin-symmetries which were previously omitted in relativistic physics classifications of spin interactions and topological quasiparticles. Our measurements of a spontaneous Hall effect in epilayers of antiferromagnetic Mn5Si3 with vanishing magnetization are consistent with our theory predictions. Bloch electrons with the unconventional staggered spin interaction, compatible with abundant low atomic-number materials, strong spin-coherence, and collinear antiferromagnetic order open unparalleled possibilities for realizing T-symmetry broken spin and topological quantum phases. △ Less

Submitted 20 March, 2021; v1 submitted 31 December, 2020; originally announced December 2020.

Comments: 26 pages, 4 figures

Anisotropic magneto-thermal transport in Co$_2$MnGa thin films

Authors: Philipp Ritzinger, Helena Reichlova, Dominik Kriegner, Anastasios Markou, Richard Schlitz, Michaela Lammel, Gyu Hyeon Park, Andy Thomas, Pavel Streda, Claudia Felser, Sebastian T. B. Goennenwein, Karel Vyborny

Abstract: Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by f… ▽ More Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented. △ Less

Submitted 28 December, 2020; originally announced December 2020.

Comments: 19 pages, 5 figures

Journal ref: Phys. Rev. B 104, 094406 (2021)

Role of magnetic exchange interactions in chiral-type Hall effects of epitaxial Mn$_{x}$PtSn films

Authors: Peter Swekis, Jacob Gayles, Dominik Kriegner, Gerhard H. Fecher, Yan Sun, Sebastian T. B. Goennenwein, Claudia Felser, Anastasios Markou

Abstract: Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputteri… ▽ More Tetragonal Mn-based Heusler compounds feature rich exchange interactions and exotic topological magnetic textures, such as antiskyrmions, complimented by the chiral-type Hall effects. This makes the material class interesting for device applications. We report the relation of the magnetic exchange interactions to the thickness and Mn concentration of Mn$_{x}$PtSn films, grown by magnetron sputtering. The competition of the magnetic exchange interactions determines the finite temperature magnetic texture and thereby the chiral-type Hall effects in external magnetic fields. We investigate the magnetic and transport properties as a function of magnetic field and temperature. We focus on the anomalous and chiral-type Hall effects and the behavior of the dc-magnetization, in relation to chiral spin textures. We further determine the stable crystal phase for a relative Mn concentration between 1.5 and 1.85 in the $I\overline{4}2d$ structure. We observe a spin-reorientation transition in all compounds studied, which is due to the competition of exchange interactions on different Mn sublattices. We discuss our results in terms of exchange interactions and compare them with theoretical atomistic spin calculations. △ Less

Submitted 27 July, 2020; originally announced July 2020.

Comments: 13 pages, 6 figures

Journal ref: ACS Appl. Electron. Mater. 3, 1323 (2021)

Investigation of Nanostructures with X-ray Scattering Techniques

Authors: Dominik Kriegner, Milan Dopita

Abstract: The structural investigations of nanomaterials motivated by their large variety and diverse set of applications have attracted considerable attention. In particular, the ever-improving machinery, both in laboratory and at large scale facilities, together with the methodical improvements available for studying nanostructures ranging from epitaxial nanomaterials, nanocrystalline thin films and coati… ▽ More The structural investigations of nanomaterials motivated by their large variety and diverse set of applications have attracted considerable attention. In particular, the ever-improving machinery, both in laboratory and at large scale facilities, together with the methodical improvements available for studying nanostructures ranging from epitaxial nanomaterials, nanocrystalline thin films and coatings, to nanoparticles and colloidal nanocrystals allows us to gain a more detailed understanding of their structural properties. As the structure essentially determines the physical properties of the materials, this advances the possibilities of structural studies and also enables a deeper understanding of the structure to property relationships. In this special issue entitled "Investigation of Nanostructures with X-ray Scattering Techniques" five contributions show the recent progress in various research fields. Contributions cover topics as diverse as neutron scattering on magnetic multilayer films, epitaxial orientation of organic thin films, nanoparticle ordering and chemical composition analysis, and the combination of nanofocused X-ray beams with electrical measurements. △ Less

Submitted 6 April, 2020; originally announced April 2020.

Comments: Editorial, 3 pages

Journal ref: Crystals 2019, 9(10), 500

Lattice distortion in TmCo$_2$: a poly- and single- crystal study

Authors: J. Šebesta, D. Kriegner, J. Prchal

Abstract: Within the RCo$_2$ family of compounds, a structural distortion linked with the onset of magnetic ordering around the critical temperature can be observed. One of the less explored RCo$_2$ compounds is TmCo$_2$ probably due to its low Curie temperature. Exceptionally this compound, given its position at the end of the ferrimagnetic series, shows discrepancies in the ordering of the Co sub-lattice… ▽ More Within the RCo$_2$ family of compounds, a structural distortion linked with the onset of magnetic ordering around the critical temperature can be observed. One of the less explored RCo$_2$ compounds is TmCo$_2$ probably due to its low Curie temperature. Exceptionally this compound, given its position at the end of the ferrimagnetic series, shows discrepancies in the ordering of the Co sub-lattice because of a weak Weiss molecular field. In this paper we focus on the structural distortion in TmCo$_2$, which appears together with the magnetic ordering around the critical temperature of $T_{C}\sim3.6$~K. Poly-crystals as well as single-crystals of TmCo$_2$ were used in our experiments. For both kinds of samples we observed the same type of the rhombohedral distortion along the [111] direction from the cubic Fd$\bar{3}$m to R$\bar{3}$m space group. The relation between observed magnetic and structural properties in this compound is discussed. △ Less

Submitted 4 April, 2020; originally announced April 2020.

Journal ref: Journal of Alloys and Compounds, 775, 969-974 (2019)

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Authors: M. Wang, C. Andrews, S. Reimers, O. J. Amin, P. Wadley, R. P. Campion, S. F. Poole, J. Felton, K. W. Edmonds, B. L. Gallagher, A. W. Rushforth, O. Makarovsky, K. Gas, M. Sawicki, D. Kriegner, J. Zubac, K. Olejnik, V. Novak, T. Jungwirth, M. Shahrokhvand, U. Zeitler, S. S. Dhesi, F. Maccherozzi

Abstract: Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b… ▽ More Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields. △ Less

Submitted 21 June, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Comments: 26 pages, 6 figures

Journal ref: Phys. Rev. B 101, 094429 (2020)

Molecular beam epitaxy of CuMnAs

Authors: Filip Krizek, Zdeněk Kašpar, Aliaksei Vetushka, Dominik Kriegner, Elisabetta M. Fiordaliso, Jan Michalicka, Ondřej Man, Jan Zubáč, Martin Brajer, Victoria A. Hills, Kevin W. Edmonds, Peter Wadley, Richard P. Campion, Kamil Olejník, Tomáš Jungwirth, Vít Novák

Abstract: We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si subs… ▽ More We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Comments: 10 pages, 8 figures and supplementary material

Journal ref: Phys. Rev. Materials 4, 014409 (2020)

Giant enhancement of the skyrmion stability in a chemically strained helimagnet

Authors: A. S. Sukhanov, Praveen Vir, A. Heinemann, S. E. Nikitin, D. Kriegner, H. Borrmann, C. Shekhar, C. Felser, D. S. Inosov

Abstract: We employed small-angle neutron scattering to demonstrate that the magnetic skyrmion lattice can be realized in bulk chiral magnets as a thermodynamically stable state at temperatures much lower than the ordering temperature of the material. This is in the regime where temperature fluctuations become completely irrelevant to the formation of the topologically non-trivial magnetic texture. In this… ▽ More We employed small-angle neutron scattering to demonstrate that the magnetic skyrmion lattice can be realized in bulk chiral magnets as a thermodynamically stable state at temperatures much lower than the ordering temperature of the material. This is in the regime where temperature fluctuations become completely irrelevant to the formation of the topologically non-trivial magnetic texture. In this attempt we focused on the model helimagnet MnSi, in which the skyrmion lattice was previously well characterized and shown to exist only in a very narrow phase pocket close to the Curie temperature of 29.5~K. We revealed that large uniaxial distortions caused by the crystal-lattice strain in MnSi result in stabilization of the skyrmion lattice in magnetic fields applied perpendicular to the uniaxial strain at temperatures as low as 5~K. To study the bulk chiral magnet subjected to a large uniaxial stress, we have utilized $μみゅー$m-sized single-crystalline inclusions of MnSi naturally found inside single crystals of the nonmagnetic material Mn$_{11}$Si$_{19}$. The reciprocal-space imaging allowed us to unambiguously identify the stabilization of the skyrmion state over the competing conical spin spiral. △ Less

Submitted 28 October, 2019; originally announced October 2019.

Comments: 6 pages, 4 figures, accepted in PRB

Journal ref: Phys. Rev. B 100, 180403(R) (2019)

Twin Domain Structure in Magnetically Doped Topological Insulators

Authors: Jakub Šebesta, Karel Carva, Dominik Kriegner, Jan Honolka

Abstract: Twin domains are naturally present in the topological insulator \BiSe{} and affect strongly its properties. While studies of its behavior for ideal \BiSe{} structure exist, little is known about their possible interaction with other defects. Extra information are needed especially for the case of artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot… ▽ More Twin domains are naturally present in the topological insulator \BiSe{} and affect strongly its properties. While studies of its behavior for ideal \BiSe{} structure exist, little is known about their possible interaction with other defects. Extra information are needed especially for the case of artificial perturbation of topological insulator states by magnetic doping, which has attracted a lot of attention recently. Employing ab initio calculations based on layered Green's function formalism, we study the interaction between twin planes in \BiSe{}. We show the influence of various magnetic and non-magnetic chemical defects on the twin plane formation energy and discuss the related modification of their distribution. Furthermore, we examine the change of dopants' magnetic properties at sites in the vicinity of a twin plane, and the dopants' preference to occupy such sites. Our results suggest that twin planes repel each other at least over distance of $3-4$~nm. However, in the presence of magnetic Mn and Fe defects a close TP placement is preferred. Furthermore, calculated twin plane formation energies indicate that in this situation their formation becomes suppressed. Finally, we discuss the influence of twin planes on the surface band gap. △ Less

Submitted 22 October, 2020; v1 submitted 1 October, 2019; originally announced October 2019.

Comments: submitted version, extended data and discussion

Journal ref: Nanomaterials 2020, 10, 2059

Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl-semimetal Co2MnGa thin films

Authors: Gyu-Hyeon Park, Helena Reichlova, Richard Schlitz, Michaela Lammel, Anastasios Markou, Peter Swekis, Philipp Ritzinger, Dominik Kriegner, Jonathan Noky, Jacob Gayles, Yan Sun, Claudia Felser, Kornelius Nielsch, Sebastian T. B. Goennenwein, Andy Thomas

Abstract: We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistiv… ▽ More We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magneto-thermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magneto-thermoelectric transport in Weyl semimetal Co2MnGa as a function of film thickness. △ Less

Submitted 7 April, 2020; v1 submitted 23 September, 2019; originally announced September 2019.

Journal ref: Phys. Rev. B 101, 060406 (2020)

Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn$_{\text{3}}$Sn

Authors: Helena Reichlova, Tomas Janda, Joao Godinho, Anastasios Markou, Dominik Kriegner, Richard Schlitz, Jakub Zelezny, Zbynek Soban, Mauricio Bejarano, Helmut Schultheiss, Petr Nemec, Tomas Jungwirth, Claudia Felser, Joerg Wunderlich, Sebastian T. B. Goennenwein

Abstract: Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally obse… ▽ More Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a corresponding counterpart in materials with non-collinear spin structure. In addition, new phenomena such as the magnetic spin Hall effect were experimentally observed in non-collinear AFMs, and the presence of the equivalent to the ferromagnetic spin transfer torque via spin polarized currents was theoretically predicted. In spite of these developments, an interpretation of the rich physical phenomena observed in non-collinear antiferromagnets is challenging, since the microscopic spin arrangement, the magnetic domain distribution, and the domain orientations have proven notoriously difficult to access experimentally. This is all the more problematic, as imaging and writing magnetic domains is of central importance for applications. Successful imaging is a basic requirement to experimentally confirm the spin transfer torque acting on non-collinear domain walls and therefore of eminent interest. Here, we demonstrate that the local magnetic structure of the non-collinear AFM Mn3Sn films can be imaged by scanning thermal gradient microscopy (STGM). The technique is based on scanning a laser spot over the sample's surface, and recording the ensuing thermo-voltage. We image the magnetic structure at a series of different temperatures and show that at room temperature, the domain structure is not affected by the application of moderate magnetic fields. In addition to imaging, we establish a scheme for heat-assisted magnetic recording, using local laser heating in combination with magnetic fields to intentionally write domain patterns into the antiferromagnet. △ Less

Submitted 31 May, 2019; originally announced May 2019.

Comments: 4 figures

Thickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co$_2$MnGa

Authors: Anastasios Markou, Dominik Kriegner, Jacob Gayles, Liguo Zhang, Yi-Cheng Chen, Benedikt Ernst, Yu-Hong Lai, Walter Schnelle, Ying-Hao Chu, Yan Sun, Claudia Felser

Abstract: Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the rol… ▽ More Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the role on the topology. The magnetron sputtered Co$_2$MnGa films are $L$$2_{\mathrm {1}}$-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity was found to be maximum at a value of 1138 S/cm, with a corresponding anomalous Hall angle of 13 %, which is comparatively larger than topologically trivial metals. There is a good agreement between the theoretical calculations and the Hall conductivity observed for the 80 nm film, which suggest that the effect is intrinsic. Thus, the Co$_2$MnGa compound manifests as a promising material towards topologically-driven spintronic applications. △ Less

Submitted 7 August, 2019; v1 submitted 25 April, 2019; originally announced April 2019.

Comments: 7 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 100, 054422 (2019)

Topological Hall effect in thin films of Mn$_{1.5}$PtSn

Authors: Peter Swekis, Anastasios Markou, Dominik Kriegner, Jacob Gayles, Richard Schlitz, Walter Schnelle, Sebastian T. B. Goennenwein, Claudia Felser

Abstract: Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $μみゅー_{0}H \approx 4~$T below the spin reorientati… ▽ More Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to $μみゅー_{0}H \approx 4~$T below the spin reorientation transition temperature, $T_{s}=185$~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries (x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum topological Hall resistivities between $0.76~μみゅーΩおめが$cm and $1.55~μみゅーΩおめが$cm at 150~K. △ Less

Submitted 18 October, 2018; originally announced October 2018.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Materials 3, 013001 (2019)

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

Authors: J. Godinho, H. Reichlova, D. Kriegner, V. Novak, K. Olejnik, Z. Kaspar, Z. Soban, P Wadley, R. P. Campion, R. M. Otxoa, P. E. Roy, J. Zelezny, T. Jungwirth, J. Wunderlich

Abstract: Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed f… ▽ More Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 5 pictures, supplementary informations

Giant magnetic response of a two-dimensional antiferromagnet

Authors: Lin Hao, D. Meyers, Hidemaro Suwa, Junyi Yang, Clayton Frederick, Tamene R. Dasa, Gilberto Fabbris, Lukas Horak, Dominik Kriegner, Yongseong Choi, Jong-Woo Kim, Daniel Haskel, Philip J. Ryan, Haixuan Xu, Cristian D. Batista, M. P. M. Dean, Jian Liu

Abstract: A fundamental difference between antiferromagnets and ferromagnets is the lack of linear coupling to a uniform magnetic field due to the staggered order parameter. Such coupling is possible via the Dzyaloshinskii-Moriya (DM) interaction but at the expense of reduced antiferromagnetic (AFM) susceptibility due to the canting-induced spin anisotropy. We solve this long-standing problem with a top-dow… ▽ More A fundamental difference between antiferromagnets and ferromagnets is the lack of linear coupling to a uniform magnetic field due to the staggered order parameter. Such coupling is possible via the Dzyaloshinskii-Moriya (DM) interaction but at the expense of reduced antiferromagnetic (AFM) susceptibility due to the canting-induced spin anisotropy. We solve this long-standing problem with a top-down approach that utilizes spin-orbit coupling in the presence of a hidden SU(2) symmetry. We demonstrate giant AFM responses to sub-Tesla external fields by exploiting the extremely strong two-dimensional critical fluctuations preserved under a symmetry-invariant exchange anisotropy, which is built into a square-lattice artificially synthesized as a superlattice of SrIrO3 and SrTiO3. The observed field-induced logarithmic increase of the ordering temperature enables highly efficient control of the AFM order. As antiferromagnets promise to afford switching speed and storage security far beyond ferromagnets, our symmetry-invariant approach unleashes the great potential of functional antiferromagnets. △ Less

Submitted 23 April, 2018; originally announced April 2018.

Comments: 3 figures

Journal ref: Nat. Phys. 14, 806-810 (2018)

Band structure of CuMnAs probed by optical and photoemission spectroscopy

Authors: M. Veis, J. Minar, G. Steciuk, L. Palatinus, C. Rinaldi, M. Cantoni, D. Kriegner, K. K. Tikuisis, J. Hamrle, M. Zahradnik, R. Antos, J. Zelezny, L. Smejkal, P. Wadley, R. P. Campion, C. Frontera, K. Uhlirova, T. Duchon, P. Kuzel, V. Novak, T. Jungwirth, K. Vyborny

Abstract: Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave… ▽ More Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical understanding of spintronic phenomena in this material, however, relies on the detailed knowledge of electronic structure (band structure and corresponding wave functions) which has so far been tested only to a limited extent. We show that AC permittivity (obtained from ellipsometry) and UV photoelectron spectra agree with density functional calculations. Together with the x-ray diffraction and precession electron diffraction tomography, our analysis confirms recent theoretical claim [Phys.Rev.B 96, 094406 (2017)] that copper atoms occupy lattice positions in the basal plane of the tetragonal unit cell. △ Less

Submitted 21 December, 2017; v1 submitted 4 December, 2017; originally announced December 2017.

Comments: 5 pages, 5 figures + Supplementary Information

Journal ref: Phys. Rev. B 97, 125109 (2018)

Magnetic anisotropy in antiferromagnetic hexagonal MnTe

Authors: D. Kriegner, H. Reichlova, J. Grenzer, W. Schmidt, E. Ressouche, J. Godinho, T. Wagner, S. Y. Martin, A. B. Shick, V. V. Volobuev, G. Springholz, V. Holý, J. Wunderlich, T. Jungwirth, K. Výborný

Abstract: Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic mome… ▽ More Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along $\left<1\bar100\right>$ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from $\sim2$~T to $\sim0.5$~T for films grown on InP and SrF$_2$ substrates, respectively. △ Less

Submitted 17 September, 2018; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 96, 214418 (2017)

Unusual ferroelectric and magnetic phases in multiferroic 2H-BaMnO$_3$ ceramics

Authors: Stanislav Kamba, Dmitry Nuzhnyy, Maxim Savinov, Pierre Toledano, Valentin Laguta, Petr Brazda, Lukas Palatinus. Filip Kadlec, Fedir Borodavka, Christelle Kadlec, Petr Bednyakov, Viktor Bovtun, Martin Kempa, Dominik Kriegner, Jan Drahokoupil, Jan Kroupa, Jan Prokleska, Kamal Chapagain, Bogdan Dabrowski, Veronica Goian

Abstract: The structural phase transition in hexagonal BaMnO$_3$ occurring at $T_c$=130 K was studied in ceramic samples using electron and X-ray diffraction, second harmonic generation as well as by dielectric and lattice dynamic spectroscopies. The low-temperature phase (space group $P6_{3}cm$) is ferroelectric with a triplicated unit cell. The phase transition is driven by an optical soft mode from the B… ▽ More The structural phase transition in hexagonal BaMnO$_3$ occurring at $T_c$=130 K was studied in ceramic samples using electron and X-ray diffraction, second harmonic generation as well as by dielectric and lattice dynamic spectroscopies. The low-temperature phase (space group $P6_{3}cm$) is ferroelectric with a triplicated unit cell. The phase transition is driven by an optical soft mode from the Brillouin-zone boundary [$q = (\frac{1}{3},\frac{1}{3},0)$]; this mode activates in infrared and Raman spectra below $T_c$ and it hardens according to the Cochran law. Upon cooling below $T_c$, the permittivity exhibits an unusual linear increase with temperature; below 60 K, in turn, a frequency-dependent decrease is observed, which can be explained by slowing-down of ferroelectric domain wall motions. Based on our data we could not distinguish whether the high-temperature phase is paraelectric or polar (space groups $P6_{3}/mmc$ or $P6_{3}mc$, respectively). Both variants of the phase transition to the ferroelectric phase are discussed based on the Landau theory. Electron paramagnetic resonance and magnetic susceptibility measurements reveal an onset of one-dimensional antiferromagnetic ordering below $\approx220\,\rm K$ which develops fully near 140 K and, below $T_{n} \approx 59\,\rm K$, it transforms into a three-dimensional antiferromagnetic order. △ Less

Submitted 5 May, 2017; originally announced May 2017.

Comments: 14 pages, 10 figures, Phys. Rev. B, in press

Journal ref: Phys. Rev. B 95, 174103 (2017)

Two-dimensional ${J}_{\rm eff}$ = 1/2 antiferromagnetic insulator unraveled from interlayer exchange coupling in artificial perovskite iridate superlattices

Authors: L. Hao, D. Meyers, C. Frederick, G. Fabbris, J. Y. Yang, N. Traynor, L. Horak, D. Kriegner, Y. S. Choi, J. W. Kim, D. Haskel, P. J. Ryan, M. P. M. Dean, J. Liu

Abstract: We report an experimental investigation of the two-dimensional ${J}_{\rm eff}$ = 1/2 antiferromagnetic Mott insulator by varying the interlayer exchange coupling in [(SrIrO$_3$)$_1$, (SrTiO$_3$)$_m$] ($m$ = 1, 2 and 3) superlattices. Although all samples exhibited an insulating ground state with long-range magnetic order, temperature-dependent resistivity measurements showed a stronger insulating… ▽ More We report an experimental investigation of the two-dimensional ${J}_{\rm eff}$ = 1/2 antiferromagnetic Mott insulator by varying the interlayer exchange coupling in [(SrIrO$_3$)$_1$, (SrTiO$_3$)$_m$] ($m$ = 1, 2 and 3) superlattices. Although all samples exhibited an insulating ground state with long-range magnetic order, temperature-dependent resistivity measurements showed a stronger insulating behavior in the $m$ = 2 and $m$ = 3 samples than the $m$ = 1 sample which displayed a clear kink at the magnetic transition. This difference indicates that the blocking effect of the excessive SrTiO$_3$ layer enhances the effective electron-electron correlation and strengthens the Mott phase. The significant reduction of the Neel temperature from 150 K for $m$ = 1 to 40 K for $m$ = 2 demonstrates that the long-range order stability in the former is boosted by a substantial interlayer exchange coupling. Resonant x-ray magnetic scattering revealed that the interlayer exchange coupling has a switchable sign, depending on the SrTiO$_3$ layer number $m$, for maintaining canting-induced weak ferromagnetism. The nearly unaltered transition temperature between the $m$ = 2 and the $m$ = 3 demonstrated that we have realized a two-dimensional antiferromagnet at finite temperatures with diminishing interlayer exchange coupling. △ Less

Submitted 1 August, 2017; v1 submitted 14 March, 2017; originally announced March 2017.

Comments: 4 figures

Journal ref: Phys. Rev. Lett. 119, 027204 (2017)

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Authors: D. Kriegner, K. Vyborny, K. Olejnik, H. Reichlova, V. Novak, X. Marti, J. Gazquez, V. Saidl, P. Nemec, V. V. Volobuev, G. Springholz, V. Holy, T. Jungwirth

Abstract: A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a mul… ▽ More A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Journal ref: Nature Communications 7,11623 (2016)

Strain-induced nonsymmorphic symmetry breaking and removal of Dirac semimetallic nodal line in an orthoperovskite iridate

Authors: Jian Liu, D. Kriegner, L. Horak, D. Puggioni, C. Rayan Serrao, R. Chen, D. Yi, C. Frontera, V. Holy, A. Vishwanath, J. M. Rondinelli, X. Marti, R. Ramesh

Abstract: By using a combination of heteroepitaxial growth, structure refinement based on synchrotron x-ray diffraction and first-principles calculations, we show that the symmetry-protected Dirac line nodes in the topological semimetallic perovskite SrIrO3 can be lifted simply by applying epitaxial constraints. In particular, the Dirac gap opens without breaking the Pbnm mirror symmetry. In virtue of a sym… ▽ More By using a combination of heteroepitaxial growth, structure refinement based on synchrotron x-ray diffraction and first-principles calculations, we show that the symmetry-protected Dirac line nodes in the topological semimetallic perovskite SrIrO3 can be lifted simply by applying epitaxial constraints. In particular, the Dirac gap opens without breaking the Pbnm mirror symmetry. In virtue of a symmetry-breaking analysis, we demonstrate that the original symmetry protection is related to the n-glide operation, which can be selectively broken by different heteroepitaxial structures. This symmetry protection renders the nodal line a nonsymmorphic Dirac semimetallic state. The results highlight the vital role of crystal symmetry in spin-orbit-coupled correlated oxides and provide a foundation for experimental realization of topological insulators in iridate-based heterostructures. △ Less

Submitted 8 March, 2016; v1 submitted 11 June, 2015; originally announced June 2015.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 93, 085118 (2016)

Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric αあるふぁ-GeTe(111) semiconductor

Authors: J. Krempaský, H. Volfová, S. Muff, N. Pilet, G. Landolt, M. Radović, M. Shi, D. Kriegner, V. Holý, J. Braun, H. Ebert, F. Bisti, V. A. Rogalev, V. N. Strocov, G. Springholz, J. Minár, J. H. Dil

Abstract: In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large… ▽ More In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large spin-splitting, they lack an important property concerning functionalization, namely the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba-splitting coupled to ferroelectricity: the ferroelectric Rashba semiconductors (FERS). Using spin- and angle-resolved photoemission spectroscopy (SARPES) we show that GeTe(111) forms a prime member of this class, displaying a complex spin-texture for the Rashba-split surface and bulk bands arising from the intrinsic inversion symmetry breaking caused by the ferroelectric polarization of the bulk (FE). Apart from pure surface and bulk states we find surface-bulk resonant states (SBR) whose wavefunctions entangle the spinors from the bulk and surface contributions. At the Fermi level their hybridization results in unconventional spin topologies with cochiral helicities and concomitant gap opening. The GeTe(111) surface and SBR states make the semiconductor surface conducting. At the same time our SARPES data confirm that GeTe is a narrow-gap semiconductor, suggesting that GeTe(111) electronic states are endowed with spin properties that are theoretically challenging to anticipate. As the helicity of the spins in Rashba bands is connected to the direction of the FE polarization, this work paves the way to all-electric non-volatile control of spin-transport properties in semiconductors. △ Less

Submitted 17 March, 2015; originally announced March 2015.

Journal ref: Phys. Rev. B 94, 205111 (2016)

Current induced torques in structures with ultra-thin IrMn antiferromagnet

Authors: H. Reichlová, D. Kriegner, V. Holý, K. Olejník, V. Novák, M. Yamada, K. Miura, S. Ogawa, H. Takahashi, T. Jungwirth, J. Wunderlich

Abstract: Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to i… ▽ More Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to investigate the role of the antiferromagnetic order in the ultra-thin IrMn films in the observed torques. In a Ta/IrMn/CoFeB structure, IrMn in the high-temperature phase diminishes the torque in the CoFeB ferromagnet. At low temperatures, the antidamping torque in CoFeB flips sign as compared to the reference Ta/CoFeB structure, suggesting that IrMn in the antiferromagnetic phase governs the net torque acting on the ferromagnet. At low temperatures, current induced torque signatures are observed also in a Ta/IrMn structure comprising no ferromagnetic layer. △ Less

Submitted 20 July, 2015; v1 submitted 12 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 92, 165424 (2015)

Powder diffraction in Bragg-Brentano geometry with straight linear detectors

Authors: Dominik Kriegner, Zdenek Matej, Radomir Kuzel, Vaclav Holy

Abstract: A common way of speeding up powder diffraction measurements is the use of one or two dimensional detectors. This usually goes along with worse resolution and asymmetric peak profiles. In this work the influence of a straight linear detector on the resolution function in the Bragg-Brentano focusing geometry is discussed. Due to the straight nature of most modern detectors geometrical defocusing occ… ▽ More A common way of speeding up powder diffraction measurements is the use of one or two dimensional detectors. This usually goes along with worse resolution and asymmetric peak profiles. In this work the influence of a straight linear detector on the resolution function in the Bragg-Brentano focusing geometry is discussed. Due to the straight nature of most modern detectors geometrical defocusing occurs which heavily influences the line shape of diffraction lines at low angles. An easy approach to limit the resolution degrading effects is presented. The presented algorithm selects an adaptive range of channels of the linear detector at low angles, resulting in increased resolution. At higher angles still the whole linear detector is used and the data collection remains fast. Using this algorithm a well-behaved resolution function is obtained in the full angular range, whereas using the full linear detector the resolution function varies within one pattern which hinders line shape and Rietveld analysis. △ Less

Submitted 26 February, 2015; v1 submitted 20 January, 2015; originally announced January 2015.

Comments: 20 pages, 5 figures

Journal ref: Journal of Applied Crystallography 48, 613-618 (2015)

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Authors: P. Wadley, V. Novák, R. P. Campion, C. Rinaldi, X. Martí, H. Reichlová, J. Zelezný, J. Gazquez, M. A. Roldan, M. Varela, D. Khalyavin, S. Langridge, D. Kriegner, F. Máca, J. Masek, R. Bertacco, V. Holy, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, C. T. Foxon, J. Wunderlich, T. Jungwirth

Abstract: Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and c… ▽ More Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neél temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics. △ Less

Submitted 14 February, 2014; originally announced February 2014.

Comments: 16 pages, 5 figures, Published in Nature Communications (2013)

Journal ref: Nat. Commun. 4:2322

Magnetic structure of NdMn$_{0.8}$Fe$_{0.2}$O$_{3+δでるた}$; neutron powder diffraction experiment

Authors: Matúš Mihalik, Marián Mihalik, Andreas Hoser, Daniel M. Pajerowski, Dominik Kriegner, Dominik Legut, Kristof M. Lebecki, Martin Vavra, Magdalena Fitta, Mark W. Meisel

Abstract: The magnetic structure of the mixed antiferromagnet NdMn$_{0.8}$Fe$_{0.2}$O$_3$ was resolved. Neutron powder diffraction data definitively resolve the Mn-sublattice with a magnetic propagation vector ${\bf k} = (000)$ and with the magnetic structure (A$_x$, F$_y$, G$_z$) for 1.6~K~$< T < T_N (\approx 59$~K). The Nd-sublattice has a (0, f$_y$, 0) contribution in the same temperature interval. The M… ▽ More The magnetic structure of the mixed antiferromagnet NdMn$_{0.8}$Fe$_{0.2}$O$_3$ was resolved. Neutron powder diffraction data definitively resolve the Mn-sublattice with a magnetic propagation vector ${\bf k} = (000)$ and with the magnetic structure (A$_x$, F$_y$, G$_z$) for 1.6~K~$< T < T_N (\approx 59$~K). The Nd-sublattice has a (0, f$_y$, 0) contribution in the same temperature interval. The Mn sublattice undergoes spin-reorientation transition at $T_1 \approx 13$~K while the Nd magnetic moment keep ordered abruptly increases at this temperature. Powder X-ray diffraction shows a strong magnetoelastic effect at $T_N$ but no additional structural phase transitions from 2~K to 300~K. Density functional theory calculations confirm the magnetic structure of the undoped NdMnO$_3$ as part of our analysis. Taken together, these results show the magnetic structure of Mn-sublattice in NdMn$_{0.8}$Fe$_{0.2}$O$_3$ is a combination of the Mn and Fe parent compounds, but the magnetic ordering of Nd sublattice spans over broader temperature interval than in case of NdMnO$_3$ and NdFeO$_3$. This result is a consequence of the fact that the Nd ions do not order independently, but via polarization from Mn/Fe sublattice. △ Less

Submitted 24 August, 2017; v1 submitted 14 October, 2013; originally announced October 2013.

Comments: regular article, 11 pages, 6 figures

Tuning the electronic properties of J_eff=1/2 correlated semimetal in epitaxial perovskite SrIrO3

Authors: Jian Liu, J. -H. Chu, C. Rayan Serrao, D. Yi, J. Koralek, C. Nelson, C. Frontera, D. Kriegner, L. Horak, E. Arenholz, J. Orenstein, A. Vishwanath, X. Marti, R. Ramesh

Abstract: We investigated the electronic properties of epitaxially stabilized perovskite SrIrO3 and demonstrated the effective strain-control on its electronic structure. Comprehensive transport measurements showed that the strong spin-orbit coupling renders a novel semimetallic phase for the J_eff=1/2 electrons rather than an ordinary correlated metal, elucidating the nontrivial mechanism underlying the di… ▽ More We investigated the electronic properties of epitaxially stabilized perovskite SrIrO3 and demonstrated the effective strain-control on its electronic structure. Comprehensive transport measurements showed that the strong spin-orbit coupling renders a novel semimetallic phase for the J_eff=1/2 electrons rather than an ordinary correlated metal, elucidating the nontrivial mechanism underlying the dimensionality-controlled metal-insulator transition in iridates. The electron-hole symmetry of this correlated semimetal was found to exhibit drastic variation when subject to bi-axial strain. Under compressive strain, substantial electron-hole asymmetry is observed in contrast to the tensile side, where the electron and hole effective masses are comparable, illustrating the susceptivity of the J_eff=1/2 to structural distortion. Tensile strain also shrinks the Fermi surface, indicative of an increasing degree of correlation which is consistent with optical measurements. These results pave a pathway to investigate and manipulate the electronic states in spin-orbit-coupled correlated oxides, and lay the foundation for constructing 5d transition metal heterostructures. △ Less

Submitted 8 May, 2013; originally announced May 2013.

Comments: 5 pages, 4 figures

xrayutilities: A versatile tool for reciprocal space conversion of scattering data recorded with linear and area detectors

Authors: Dominik Kriegner, Eugen Wintersberger, Julian Stangl

Abstract: We present general algorithms to convert scattering data of linear and area detectors recorded in various scattering geometries to reciprocal space coordinates. The presented algorithms work for any goniometer configuration including popular four-circle, six-circle and kappa goniometers. We avoid the use of commonly employed approximations and therefore provide algorithms which work also for large… ▽ More We present general algorithms to convert scattering data of linear and area detectors recorded in various scattering geometries to reciprocal space coordinates. The presented algorithms work for any goniometer configuration including popular four-circle, six-circle and kappa goniometers. We avoid the use of commonly employed approximations and therefore provide algorithms which work also for large detectors at small sample detector distances. A recipe for determining the necessary detector parameters including mostly ignored misalignments is given. The algorithms are implemented in a freely available open-source package. △ Less

Submitted 5 April, 2013; originally announced April 2013.

Comments: 28 pages, 5 figures, submitted to the Journal of Applied Crystallography

Journal ref: J. Appl. Cryst. (2013). 46, 1162-1170

Semiconductor quantum dots with light-hole exciton ground state: fabrication and fine structure

Authors: Y. H. Huo, B. J. Witek, S. Kumar, R. Singh, E. Zallo, R. Grifone, D. Kriegner, R. Trotta, N. Akopian, J. Stangl, V. Zwiller, G. Bester, A. Rastelli, O. G. Schmidt

Abstract: Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has dominant heavy-hole (HH) character. For this reason light-hole (LH) states have been largely neglected, despite the fact that may enable the realilza… ▽ More Quantum dots (QDs) can act as convenient hosts of two-level quantum szstems, such as single electron spins, hole spins or excitons (bound electron-hole pairs). Due to quantum confinement, the ground state of a single hole confined in a QD usually has dominant heavy-hole (HH) character. For this reason light-hole (LH) states have been largely neglected, despite the fact that may enable the realilzation of coherent photon-to-spin converters or allow for faster spin manipulation compared to HH states. In this work, we use tensile strains larger than 0.3% to switch the ground state of excitons confined in high quality GaAs/AlGaAs QDs from the conventional HH- to LH-type. The LH-exciton fine structure is characterized by two in-plane-polarized lines and, ~400 micro-eV above them, by an additional line with pronounced out-of-plane oscillator strength, consistent with theoretical predictions based on atomistic empirical pseudopotential calculations and a simple mesoscopic model. △ Less

Submitted 31 August, 2012; originally announced August 2012.

Comments: 16 pages, 4 figures

MSC Class: 81Sxx(General quantum mechanics and problems of quantization)