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Graphene magnetoresistance control by photoferroelectric substrate
Authors:
K. Maity,
J. -F. Dayen,
B. Doudin,
R. Gumeniuk,
B. Kundys
Abstract:
Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response…
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Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by the bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to new a magnetic dimension and advance wireless operation for sensors and field-effect transistors.
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Submitted 6 May, 2024;
originally announced May 2024.
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Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor
Authors:
K. Maity,
J. -F. Dayen,
B. Doudin,
R. Gumeniuk,
B. Kundys
Abstract:
As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optica…
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As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than two orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.
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Submitted 3 January, 2024;
originally announced January 2024.
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On the photovoltaic effect asymmetry in ferroelectrics
Authors:
S. Semak,
V. Kapustianyk,
Yu. Eliyashevskyy,
O. Bovgyra,
M. Kovalenko,
U. Mostovoi,
B. Doudin,
B. Kundys
Abstract:
Despite symmetrical polarization, the magnitude of a light-induced voltage is known to be asymmetric with respect to poling sign in many photovoltaic (PV) ferroelectrics (FEs). This asymmetry remains unclear and is often attributed to extrinsic effects. We show here for the first time that such an asymmetry can be intrinsic, steaming from the superposition of asymmetries of internal FE bias and el…
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Despite symmetrical polarization, the magnitude of a light-induced voltage is known to be asymmetric with respect to poling sign in many photovoltaic (PV) ferroelectrics (FEs). This asymmetry remains unclear and is often attributed to extrinsic effects. We show here for the first time that such an asymmetry can be intrinsic, steaming from the superposition of asymmetries of internal FE bias and electro-piezo-strictive deformation. This hypothesis is confirmed by the observed decrease of PV asymmetry for smaller FE bias. Moreover, the both PV effect and remanent polarization are found to increase under vacuum-induced expansion and to decrease for gas-induced compression, with tens percents tunability. The change in cations positions under pressure is analysed through the first-principle density functional theory calculations. The reported properties provide key insight for FE-based solar elements optimization.
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Submitted 31 May, 2023;
originally announced May 2023.
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A strain-controlled magnetostrictive pseudo spin valve
Authors:
Vadym Iurchuk,
Julien Bran,
Manuel Acosta,
Bohdan Kundys
Abstract:
Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral electric-field driven strain-mediated modulation of magnetic properties in Co$/$Cu$/$Py pseudo spin valve grown on ferroelectric PMN-PT substrate. We show a decrease…
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Electric-field control of magnetism via inverse magnetostrictive effect is an efficient path towards improving energy-efficient storage and sensing devices based on giant magnetoresistance effect. In this letter, we report on lateral electric-field driven strain-mediated modulation of magnetic properties in Co$/$Cu$/$Py pseudo spin valve grown on ferroelectric PMN-PT substrate. We show a decrease of the giant magnetoresistance ratio of the pseudo spin valve with increasing electric field, which is attributed to the deviation of the Co layer magnetization from the initial direction due to strain-induced magnetoelastic anisotropy contribution. Additionally, we demonstrate that strain-induced magnetic anisotropy effectively shifts the switching field of the magnetostrictive Co layer, while keeping the switching field of the nearly zero-magnetostrictive Py layer unaffected due to its negligible magnetostriction constant. We argue that magnetostrictively optimized magnetic films in properly engineered multilayered structures can offer a path to enhancing the selective magnetic switching in spintronic devices.
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Submitted 15 February, 2023;
originally announced February 2023.
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Photovoltaic-ferroelectric materials for the realization of all-optical devices
Authors:
A. Makhort,
R. Gumeniuk,
J. -F. Dayen,
P. Dunne,
U. Burkhardt,
M. Viret,
B. Doudin,
B. Kundys
Abstract:
Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a fer…
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Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.
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Submitted 12 March, 2022;
originally announced March 2022.
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Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents
Authors:
Peter Dunne,
Ciaran Fowley,
Gregor Hlawacek,
Jinu Kurian,
Gwenaël Atcheson,
Silviu Colis,
Niclas Teichert,
Bohdan Kundys,
M. Venkatesan,
Jürgen Lindner,
Alina Maria Deac,
Thomas M. Hermans,
J. M. D. Coey,
Bernard Doudin
Abstract:
Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation c…
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Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in-situ characterisation using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, and using this, multi-level switching is demonstrated. The result is that spin-switching current densities, down to 800 kA cm$^{-2}$, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements, but also neuromorphic and probabilistic computing.
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Submitted 14 September, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure
Authors:
D. Kundys,
A. Cascales,
A. S. Makhort,
H. Majjad,
F. Chevrier,
B. Doudin,
A. Fedrizzi,
B. Kundys
Abstract:
Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical flue…
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Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical fluence. The competition between light-induced charge generation in ferroelectric-photovoltaic substrate with subsequent relaxation processes provides the selective photocarrier trapping control affecting the doping of 2D overlayer. These findings open the road to photonic control of 2D devices for all -optical modulators and a variety of all-optical logic circuits, memories and field-effect transistors.
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Submitted 12 March, 2021; v1 submitted 18 March, 2020;
originally announced March 2020.
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Reconfigurable single photon sources based on functional materials
Authors:
Dmytro Kundys,
Francesco Graffitti,
Richard A. McCracken,
Alessandro Fedrizzi,
Bohdan Kundys
Abstract:
The future of quantum photonic technology depends on the realization of efficient sources of single photons, the ideal carriers of quantum information. Parametric downconversion (PDC) is a promising route to create highly coherent, spectrally pure single photons for quantum photonics using versatile group-velocity matching (GVM) and tailored nonlinearities. However, the functionality to actively c…
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The future of quantum photonic technology depends on the realization of efficient sources of single photons, the ideal carriers of quantum information. Parametric downconversion (PDC) is a promising route to create highly coherent, spectrally pure single photons for quantum photonics using versatile group-velocity matching (GVM) and tailored nonlinearities. However, the functionality to actively control the poling period of nonlinear crystals used in PDC is currently missing, yet would enable to dynamically modify the wavelength of single photons produced in the PDC process. Here a detailed GVM study is presented for functional PMN-0.38PT material which can be dynamically repolled at ambient conditions with fields as low as 0.4 kV/mm. Our study reveals phase-matching conditions for spectrally pure single photon creation at 5-6 microns. Further, a practical approach is proposed for on-flight wavelength switching of the created single photons. The reported reconfigurable functionality benefits a wide range of emerging quantum-enhanced applications in the mid-IR spectral region where the choice of single photon sources is currently limited.
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Submitted 10 January, 2020; v1 submitted 3 October, 2019;
originally announced October 2019.
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Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling
Authors:
A. Quattropani,
A. S. Makhort,
M. V. Rastei,
G. Versini,
G. Schmerber,
S. Barre,
A. Dinia,
A. Slaoui,
J. -L. Rehspringer,
T. Fix,
S. Colis,
B. Kundys
Abstract:
Ferroelectric materials are interesting candidates for future photovoltaic applications due to their potential to overcome the fundamental limits of conventional single bandgap semiconductor-based solar cells. Although a more efficient charge separation and above bandgap photovoltages are advantageous in these materials, tailoring their photovoltaic response using ferroelectric functionalities rem…
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Ferroelectric materials are interesting candidates for future photovoltaic applications due to their potential to overcome the fundamental limits of conventional single bandgap semiconductor-based solar cells. Although a more efficient charge separation and above bandgap photovoltages are advantageous in these materials, tailoring their photovoltaic response using ferroelectric functionalities remains puzzling. Here we address this issue by reporting a clear hysteretic character of the photovoltaic effect as a function of electric field and its dependence on the poling history. Furthermore, we obtain insight into light induced nonequilibrium charge carrier dynamics in Bi2FeCrO6 films involving not only charge generation, but also recombination processes. At the ferroelectric remanence, light is able to electrically depolarize the films with remanent and transient effects as evidenced by electrical and piezoresponse force microscopy (PFM) measurements. The hysteretic nature of the photovoltaic response and its nonlinear character at larger light intensities can be used to optimize the photovoltaic performance of future ferro-electric-based solar cells.
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Submitted 17 August, 2018;
originally announced August 2018.
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Larger photovoltaic effect and hysteretic photocarrier dynamics in Pb[(Mg1/3Nb2/3)0.70Ti0.30]O3 crystal
Authors:
A. S. Makhort,
G. Schmerber,
B. Kundys
Abstract:
Following the recent discovery of a bulk photovoltaic effect in the Pb[(Mg1/3Nb2/3)0.68Ti0.32]O3 crystal, we report here more than one order of magnitude improvement of photovoltaicity as well as its poling dependence in the related composition of lead magnesium niobate-lead titanate noted Pb[(Mg1/3Nb2/3)0.7Ti0.30]O3. Photocurrent measurements versus light intensity reveal a fascinating hysteretic…
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Following the recent discovery of a bulk photovoltaic effect in the Pb[(Mg1/3Nb2/3)0.68Ti0.32]O3 crystal, we report here more than one order of magnitude improvement of photovoltaicity as well as its poling dependence in the related composition of lead magnesium niobate-lead titanate noted Pb[(Mg1/3Nb2/3)0.7Ti0.30]O3. Photocurrent measurements versus light intensity reveal a fascinating hysteretic charge carriers dynamics clearly demonstrating charge generation, trapping and release processes.
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Submitted 13 June, 2019; v1 submitted 23 January, 2018;
originally announced January 2018.
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Photovoltaic effect and photopolarization in Pb[(Mg1/3Nb2/3)0.68Ti0.32]O3 crystal
Authors:
A. S. Makhort,
F. Chevrier,
D. Kundys,
B. Doudin,
B. Kundys
Abstract:
Ferroelectric photovoltaic materials are an alternative to semiconductor-based photovoltaics and offer the advantage of above bandgap photovoltage generation. However, there are few known compounds, and photovoltaic efficiencies remain low. Here, we report the discovery of a photovoltaic effect in undoped lead magnesium niobate-lead titanate crystal and a significant improvement in the photovoltai…
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Ferroelectric photovoltaic materials are an alternative to semiconductor-based photovoltaics and offer the advantage of above bandgap photovoltage generation. However, there are few known compounds, and photovoltaic efficiencies remain low. Here, we report the discovery of a photovoltaic effect in undoped lead magnesium niobate-lead titanate crystal and a significant improvement in the photovoltaic response under suitable electric fields and temperatures. The photovoltaic effect is maximum near the electric-field-driven ferroelectric dipole reorientation, and increases threefold near the Curie temperature. Moreover, at ferroelectric saturation, the photovoltaic response exhibits clear remanent and transient effects. The transient-remanent combinations together with electric and thermal tuning possibilities indicate photoferroelectric crystals as emerging elements for photovoltaics and optoelectronics, relevant to all-optical information storage and beyond.
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Submitted 15 January, 2018;
originally announced January 2018.
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Tuning a sign of magnetoelectric coupling in paramagnetic NH2(CH3)2Al1-xCrx(SO4)*6H2O crystals by metal ion substitution
Authors:
V. Kapustianyk,
Yu. Eliyashevskyy,
Z. Czapla,
V. Rudyk,
R. Serkiz,
N. Ostapenko,
I. Hirnyk,
J. -F. Dayen,
M. Bobnar,
R. Gumeniuk,
B. Kundys
Abstract:
Hybrid organometallic systems offer a wide range of functionalities, including magnetoelectric interactions. However, the ability to design on-demand ME coupling remains challenging despite a variety of host-guest configurations and ME phases coexistence possibilities. Here, we report the effect of metal-ion substitution on the magnetic and electric properties in the paramagnetic ferroelectric DMA…
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Hybrid organometallic systems offer a wide range of functionalities, including magnetoelectric interactions. However, the ability to design on-demand ME coupling remains challenging despite a variety of host-guest configurations and ME phases coexistence possibilities. Here, we report the effect of metal-ion substitution on the magnetic and electric properties in the paramagnetic ferroelectric DMAAS crystals. Doing so we are able to induce and even tune a sign of the ME interactions in the paramagnetic ferroelectric state. Both studied samples with 6.5% and 20% of Cr become paramagnetic, contrary to the initial diamagnetic compound. Due to the isomorphous substitution with Cr the ferroelectric phase transition temperature increases nonlinearly, with the shift being larger for the sample with Cr content of 6.5%. A magnetic field applied along the polar c axis increases ferroelectricity for this sample and shifts Tc to higher values, while inverse effects are observed for sample containing 20% of Cr. The ME coupling coefficient of 1.7ns/m found for a crystal with 20% of Cr is among the highest reported up to now. The observed sign change of ME coupling coefficient with a small change in Cr content paves the way for ME coupling engineering.
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Submitted 29 December, 2017;
originally announced December 2017.
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Optical Writing of Magnetic Properties by Remanent Photostriction
Authors:
V. Iurchuk,
D. Schick,
J. Bran,
D. Colson,
A. Forget,
D. Halley,
A. Koc,
M. Reinhardt,
C. Kwamen,
N. A. Morley,
M. Bargheer,
M. Viret,
R. Gumeniuk,
G. Schmerber,
B. Doudin,
B. Kundys
Abstract:
We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the stra…
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We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.
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Submitted 5 September, 2016;
originally announced September 2016.
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Room temperature polarization in the ferrimagnetic Ga2-xFexO3 ceramics
Authors:
B. Kundys,
F. Roulland,
C. Lefevre,
C. Meny,
A. Thomasson,
N. Viart
Abstract:
The effect of the Fe-Ga ratio on the magnetic and electric properties of the multiferroic Ga2-xFexO3 compound has been studied in order to determine the composition range exhibiting magnetic and electric orders coexistence and their critical temperatures. A magnetoelectric phase diagram, showing the evolution of both the Neel magnetic ordering temperature and the electric ordering temperature, ver…
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The effect of the Fe-Ga ratio on the magnetic and electric properties of the multiferroic Ga2-xFexO3 compound has been studied in order to determine the composition range exhibiting magnetic and electric orders coexistence and their critical temperatures. A magnetoelectric phase diagram, showing the evolution of both the Neel magnetic ordering temperature and the electric ordering temperature, versus the iron content has been established for x values between 0.9 and 1.4. While the ferrimagnetic Neel temperature increases with the iron content, the electric ordering temperature shows an opposite trend. The electric polarization has been found to exist far above room temperature for the x value of 1.1 composition which shows the highest observed electric ordering temperature of approx. 580K. The compounds with x values of 1.3 and 1.4 are ferrimagnetic-electric relaxors with both properties coexisting at room temperature.
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Submitted 14 July, 2016;
originally announced July 2016.
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Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$
Authors:
V. Iurchuk,
B. Doudin,
J. Bran,
B. Kundys
Abstract:
Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of electric field induced deformation of piezoelectric elements is a promising low-energy approach for magnetization control. We investigate the system of piezoelect…
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Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of electric field induced deformation of piezoelectric elements is a promising low-energy approach for magnetization control. We investigate the system of piezoelectric substrate Pb[Zr$_x$Ti$_{1-x}$]O$_3$ with CoFe overlayers, extending the known reversible bistable electro-magnetic coupling to surface and multistate operations, adding the initial state reset possibility. Increasing the CoFe thickness improves the magnetoresistive sensitivity, but at the expenses of decreasing the strain-mediated coupling, with optimum magnetic thin film thickness of the order of 100 nm. The simplest resistance strain gauge structure is realized and discussed as a multistate memory cell demonstrating both resistive memory (RRAM) and magnetoresistive memory (MRAM) functionalities in a single structure.
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Submitted 17 March, 2016;
originally announced March 2016.
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Multi-state and non-volatile control of graphene conductivity with surface electric fields
Authors:
V. Iurchuk,
H. Majjad,
F. Chevrier,
D. Kundys,
B. Leconte,
B. Doudin,
B. Kundys
Abstract:
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is demonstrated under low sub-coercive electric fields, with a susceptibility exceeding by more than two orders of magnitude those reported in a vertical gating geometry.…
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Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is demonstrated under low sub-coercive electric fields, with a susceptibility exceeding by more than two orders of magnitude those reported in a vertical gating geometry. Our example of reversible and low-power lateral control over 11 memory states in the graphene conductivity illustrates the possibility of multimemory and multifunctional applications, as top and bottom inputs remain accessible.
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Submitted 14 November, 2015;
originally announced November 2015.
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Photostrictive materials
Authors:
B. Kundys
Abstract:
Light-matter interactions that lead to nonthermal changes in size of the sample constitute a photostrictive effect in many compounds. The photostriction phenomenon was observed in four main groups of materials, ferroelectrics, polar, and non-polar semiconductors, as well as in organic-based materials that are reviewed here. The key mechanisms of photostriction and its dependence on several paramet…
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Light-matter interactions that lead to nonthermal changes in size of the sample constitute a photostrictive effect in many compounds. The photostriction phenomenon was observed in four main groups of materials, ferroelectrics, polar, and non-polar semiconductors, as well as in organic-based materials that are reviewed here. The key mechanisms of photostriction and its dependence on several parameters and perturbations are assessed. The major literature of the photostriction is surveyed, and the review ends with a summary of the proposed technical applications.
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Submitted 5 March, 2015;
originally announced March 2015.
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Multistate nonvolatile straintronics controlled by a lateral electric field
Authors:
V. Iurchuk,
B. Doudin,
B. Kundys
Abstract:
We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory st…
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We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.
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Submitted 24 July, 2014; v1 submitted 14 July, 2014;
originally announced July 2014.
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Subcoercive and multilevel ferroelastic remnant states with resistive readout
Authors:
B. Kundys,
V. Iurchuk,
C. Meny,
H. Majjad,
B. Doudin
Abstract:
Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for applications. We propose here to take advantage of the multiferroic properties of ferroelectrics, using ferroelasticity to create a remnant strain, persisting after stressi…
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Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for applications. We propose here to take advantage of the multiferroic properties of ferroelectrics, using ferroelasticity to create a remnant strain, persisting after stressing the material by converse piezoelectricity means. While large electric fields are needed to switch the polarization, here writing occurs at subcoercive much lower field values, which can efficiently imprint multiple remnant strain states. A proof-of-principle device, with the simplest and non-optimized resistance strain detection design, is shown here to exhibit 13-memory states of high reproducibility and reliability. The related advantages in lower power consumption and limited device fatigue make our approach relevant for applications.
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Submitted 13 June, 2014;
originally announced June 2014.
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Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3
Authors:
B. Kundys,
C. Meny,
M. R. J. Gibbs,
V. Da Costa,
M. Viret,
M. Acosta,
D. Colson,
B. Doudin
Abstract:
We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance i…
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We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.
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Submitted 2 July, 2012;
originally announced July 2012.
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Photostriction in BiFeO3: wavelength dependence
Authors:
B. Kundys,
M. Viret,
C. Meny,
V. Da Costa,
D. Colson,
B. Doudin
Abstract:
In electrically polar solids optomechanical effects result from the combination of two main processes, electric field-induced strain and photon-induced voltages. Whereas the former depends on the electrostrictive ability of the sample to convert electric energy into mechanical energy, the latter is caused by the capacity of photons with appropriate energy to generate charges and, therefore, can de…
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In electrically polar solids optomechanical effects result from the combination of two main processes, electric field-induced strain and photon-induced voltages. Whereas the former depends on the electrostrictive ability of the sample to convert electric energy into mechanical energy, the latter is caused by the capacity of photons with appropriate energy to generate charges and, therefore, can depend on wavelength.We report here on mechanical deformation of BiFeO3 and its response time to discrete wavelengths of incident light ranging from 365 to 940 nm. The mechanical response of BiFeO3 is found to have two maxima in near-UV and green spectral wavelength regions.
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Submitted 28 March, 2012;
originally announced March 2012.
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Light-induced size changes in BiFeO3 crystals
Authors:
B. Kundys,
M. Viret,
D. Colson,
D. O. Kundys
Abstract:
Multifunctional oxides are promising materials because of their fundamental physical properties as well as their potential in applications1. Among these materials, multiferroics exhibiting ferroelectricity and magnetism are good candidates for spin electronic applications using the magnetoelectric effect, which couples magnetism and ferroelecticity. Furthermore, because ferroelectrics are insulato…
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Multifunctional oxides are promising materials because of their fundamental physical properties as well as their potential in applications1. Among these materials, multiferroics exhibiting ferroelectricity and magnetism are good candidates for spin electronic applications using the magnetoelectric effect, which couples magnetism and ferroelecticity. Furthermore, because ferroelectrics are insulators with a reasonable bandgap, photons can efficiently interact with electrons leading to photoconduction or photovoltaic effects. However, until now, coupling of light with mechanical degrees of freedom has been elusive, although ferroelasticity is a well-known property of these materials. Here, we report on the observation, for the first time, of a substantial visiblelight- induced change in the dimensions of BiFeO3 crystals at room temperature. The relative light-induced photostrictive effect is of the order of 10e-5 with response times below 0.1s. It depends on the polarization of incident light as well as applied magnetic fields. This opens the perspective of combining mechanical, magnetic, electric and optical functionalities in future generations of remote switchable devices.
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Submitted 15 November, 2010;
originally announced November 2010.
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Multiferroicity and hydrogen-bond ordering in (C2H5NH3)2CuCl4 featuring dominant ferromagnetic interactions
Authors:
B. Kundys,
A. Lappas,
M. Viret,
V. Kapustianyk,
V. Rudyk,
S. Semak,
Ch. Simon,
I. Bakaimi
Abstract:
We demonstrate that ethylammonium copper chloride, (C2H5NH3)2CuCl4, a member of the hybrid perovskite family is an electrically polar and magnetic compound with dielectric anomaly around the Curie point (247 K). We have found large spontaneous electric polarization below this point accompanied with a color change in the sample. The system is also ferroelectric, with large remnant polarization (3…
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We demonstrate that ethylammonium copper chloride, (C2H5NH3)2CuCl4, a member of the hybrid perovskite family is an electrically polar and magnetic compound with dielectric anomaly around the Curie point (247 K). We have found large spontaneous electric polarization below this point accompanied with a color change in the sample. The system is also ferroelectric, with large remnant polarization (37μC/cm2) that is comparable to classical ferroelectric compounds. The results are ascribed to hydrogen-bond ordering of the organic chains. The coexistence of ferroelectricity and dominant ferromagnetic interactions allows to relate the sample to a rare group of magnetic multiferroic compounds. In such hybrid perovskites the underlying hydrogen bonding of easily tunable organic building blocks in combination with the 3d transition-metal layers offers an emerging pathway to engineer multifuctional multiferroics.
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Submitted 1 July, 2010;
originally announced July 2010.
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Magnetoelectric coupling in polycrystalline FeVO4
Authors:
Bohdan Kundys,
Christine Martin,
Charles Simon
Abstract:
We report coupling between magnetic and electric orders for antiferromagnetic polycrystalline FeVO4 in which magnetism-induced polarization has been recently found in noncollinear antiferromagnetic state below the second antiferromagnetic phase transition at TN2=15.7K. In this low symmetry phase space group P-1, the magnetic field dependence of electric polarization evidences a clear magnetoelec…
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We report coupling between magnetic and electric orders for antiferromagnetic polycrystalline FeVO4 in which magnetism-induced polarization has been recently found in noncollinear antiferromagnetic state below the second antiferromagnetic phase transition at TN2=15.7K. In this low symmetry phase space group P-1, the magnetic field dependence of electric polarization evidences a clear magnetoelectric coupling in the noncollinear spin-configured antiferromagnetic phase. The discontinuity of magnetodielectric effect observed at the vicinity of the polar to nonpolar transition evidences competition between different magnetodielectric couplings in the two different antiferromagnetic states. The existence of thermal expansion anomaly near TN2 and magnetostriction effect support magnetoelastically mediated scenario of the observed magnetoelectric effect.
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Submitted 16 November, 2009;
originally announced November 2009.
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Three terminal capacitance technique for magnetostriction and thermal expansion measurements
Authors:
B. Kundys,
Yu. Bukhantsev,
S. Vasiliev,
D. Kundys,
M. Berkowski,
V. P. Dyakonov
Abstract:
An instrument has been constructed to measure a large range of magnetostriction and thermal expansion between room temperature and 4 K in a superconductive split-coil magnet, that allows investigation in magnetic fields up to 12 T. The very small bulk samples (up to 1 mm in size) as well as big ones (up to 13 mm) of the irregular form can be measured. The possibility of magnetostriction investig…
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An instrument has been constructed to measure a large range of magnetostriction and thermal expansion between room temperature and 4 K in a superconductive split-coil magnet, that allows investigation in magnetic fields up to 12 T. The very small bulk samples (up to 1 mm in size) as well as big ones (up to 13 mm) of the irregular form can be measured. The possibility of magnetostriction investigation in thin films is shown. A general account is given of both electrical and the mechanical aspects of the design of capacitance cell and their associated electronic circuitry. A simple lever device is proposed to increase the sensitivity twice. The resulting obtained sensitivity can be 0.5 Angstrom. The performance of the technique is illustrated by some preliminary measurements of the magnetostriction of superconducting MgB2, thermal expansion of (La0.8Ba0.2)0.93MnO3 single crystal and magnetoelastic behavior of the Ni/Si(111) and La0.7Sr0.3CoO3/SAT0.7CAT0.1LA0.2(001) cantilevers.
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Submitted 18 October, 2009;
originally announced October 2009.
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Polar properties of Eu0.6Y0.4MnO3 ceramics and their magnetic field dependence
Authors:
J. Agostinho Moreira,
A. Almeida,
W. S. Ferreira,
M. R. Chaves,
B. Kundys,
R. Ranjith,
W. Prellier,
S. M. F. Vilela,
P. B. Tavares
Abstract:
Eu1-xYxMnO3 exhibits, unlike other magnetoelectric systems, very distinctive features. Its magnetoelectric properties is driven by the magnetic spin of the Mn3+ ion, but they can be drastically changed by varying the content of Y3+, which it does not carry any magnetic moment. Though the x = 0.40 composition has been studied extensively, some basic questions still remain to be thoroughly underst…
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Eu1-xYxMnO3 exhibits, unlike other magnetoelectric systems, very distinctive features. Its magnetoelectric properties is driven by the magnetic spin of the Mn3+ ion, but they can be drastically changed by varying the content of Y3+, which it does not carry any magnetic moment. Though the x = 0.40 composition has been studied extensively, some basic questions still remain to be thoroughly understood. Thus, this work is aimed at studying some of its polar properties and their magnetic field dependence as well. The experimental results here reported have shown that this material is very easily polarisable under external electric fields, and so, whenever the polarization is obtained from time integration of the displacement currents, an induced polarization is superposed to the spontaneous one, eventually masking the occurrence of ferroelectricity. We have found clear evidence for the influence of a magnetic field in the polar properties of Eu0.6Y0.4MnO3. The study of electric polarization of Eu0.6Y0.4MnO3 under an external magnetic field yields a value with the same order of magnitude of the remanent polarization determined from polarization reversal experiments. The comparison of the magnetic induced changes on the polarization obtained in polycrystalline samples and single crystals confirms the threshold magnetic field value for the polarization rotation from the a- to the c-direction, and evidencing the importance of the granular nature of the samples in the polar response to magnetic field.
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Submitted 24 September, 2009;
originally announced September 2009.
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Magnetoelectric interactions in polycrystalline multiferroic antiferromagnets CuFe(1-x)RhxO2 (x=0.00 and x=0.05)
Authors:
B. Kundys,
A. Maignan,
D. Pelloquin,
Ch. Simon
Abstract:
Magnetoelectric coupling in the polycrystalline antiferromagnets CuFe0.95Rh0.05O2 and CuFeO2 has been investigated. For both samples, electric polarization was observed in the absence of an applied external magnetic field demonstrating that for multiferroic research ceramics are worth to be studied. The observed magnetodielectric effect for CuFe0.95Rh0.05O2 in the electrically polar phase suppor…
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Magnetoelectric coupling in the polycrystalline antiferromagnets CuFe0.95Rh0.05O2 and CuFeO2 has been investigated. For both samples, electric polarization was observed in the absence of an applied external magnetic field demonstrating that for multiferroic research ceramics are worth to be studied. The observed magnetodielectric effect for CuFe0.95Rh0.05O2 in the electrically polar phase supports the existence of a noncollinear antiferromagnetic state. Interestingly, the electric polarization of this sample can be suppressed by a magnetic field. The temperature dependence of the relative magnitude of the magnetodielectric effect shows a discontinuity, clearly indicating different mechanisms of the magnetodielectric couplings in polar and paraelectric antiferromagnetic states.
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Submitted 27 May, 2009; v1 submitted 13 March, 2009;
originally announced March 2009.
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Multiferroicity with high-Tc in ceramics of the YBaCuFeO5 ordered perovskite
Authors:
B. Kundys,
A. Maignan,
Ch. Simon
Abstract:
A dielectric anomaly has been found near the incommensurate to commensurate antiferromagnetic phase transition (TN2=230 K) in YBaCuFeO5 ceramics, a compound which crystallizes in an ordered perovskite structure. The existence of electric polarization below TN2 suggests the magnetism induced charge polarization effect that is also confirmed by its strong magnetic field dependence below TN2. Accor…
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A dielectric anomaly has been found near the incommensurate to commensurate antiferromagnetic phase transition (TN2=230 K) in YBaCuFeO5 ceramics, a compound which crystallizes in an ordered perovskite structure. The existence of electric polarization below TN2 suggests the magnetism induced charge polarization effect that is also confirmed by its strong magnetic field dependence below TN2. Accordingly, the peak near TN2 of the magnetodielectric effect indicates a maximum of magnetodielectric susceptibility near the spin reorientation transition. Considering the abundance of magnetic compounds which structures derive from the perovskite, these results might open up the way toward the control of electric polarization near room temperature.
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Submitted 13 March, 2009; v1 submitted 10 March, 2009;
originally announced March 2009.
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Charge order, dielectric response and local structure of La5/3Sr1/3NiO4 system
Authors:
M Filippi,
B Kundys,
S Agrestini,
W Prellier,
H Oyanagi,
N L Saini
Abstract:
Charge ordering, dielectric permittivity and local structure of La5/3Sr1/3NiO4 system have been explored X-ray charge scattering, complex dielectric impedance spectroscopy, and extended X-ray absorption fine structure (EXAFS) measurements, made on the same single crystal sample. The local structure measured by the temperature dependent polarized Ni K-edge EXAFS shows significant distortions in t…
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Charge ordering, dielectric permittivity and local structure of La5/3Sr1/3NiO4 system have been explored X-ray charge scattering, complex dielectric impedance spectroscopy, and extended X-ray absorption fine structure (EXAFS) measurements, made on the same single crystal sample. The local structure measured by the temperature dependent polarized Ni K-edge EXAFS shows significant distortions in the NiO2 planes. These local distortions could be reasonable cause of high dielectric permittivity of the title system (e=100 at 5K) with the charge ordering in this system being a ferroelectric-like second order transition.
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Submitted 20 November, 2009; v1 submitted 22 January, 2009;
originally announced January 2009.
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Multiferroicity and spiral magnetism in FeVO$_4$ with quenched Fe orbital moments
Authors:
A. Daoud-Aladine,
B. Kundys,
C. Martin,
P. G. Radaelli,
P. J. Brown,
C. Simon,
L. C. Chapon
Abstract:
FeVO$_4$ has been studied by heat capacity, magnetic susceptibility, electric polarization and single crystal neutron diffraction experiments. The triclinic crystal structure is made of \emph{S}-shaped clusters of six Fe$^{3+}$ ions, linked by VO$_4^{3-}$ groups. Two long-range magnetic ordering transitions occur at T$_{N1}$=22K and T$_{N2}$=15K. Both magnetic structures are incommensurate. That…
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FeVO$_4$ has been studied by heat capacity, magnetic susceptibility, electric polarization and single crystal neutron diffraction experiments. The triclinic crystal structure is made of \emph{S}-shaped clusters of six Fe$^{3+}$ ions, linked by VO$_4^{3-}$ groups. Two long-range magnetic ordering transitions occur at T$_{N1}$=22K and T$_{N2}$=15K. Both magnetic structures are incommensurate. That stable below T$_{N1}$ is collinear with amplitude modulated moments whereas below T$_{N2}$ the arrangement is non-collinear with a helicoidal modulation. Below T$_{N2}$, \fevo becomes weakly ferroelectric coincidentally with the loss of the collinearity of the magnetic structure. We conclude that \fevo provides another example of frustrated spiral magnet similar to the classical TbMnO$_3$ compound. However, \fevo has quenched orbital moments and a particular structure clarifying the respective role of anisotropy and magnetic frustration in this type of multiferroic materials.
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Submitted 23 December, 2008;
originally announced December 2008.
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A Multiferroic Ceramic with Perovskite Structure: La0.5Bi0.5Mn0.5Fe0.5O3.09
Authors:
Asish K. Kundu,
R. Ranjith,
V. Pralong,
N. Nguyen,
B. Kundys,
V. Caignaert,
W. Prellier,
B. Raveau
Abstract:
ABO3 perovskite multiferroic La0.5Bi0.5Mn0.5Fe0.5O3.09 where the B-site cations is responsible for the magnetic properties and the A-site cation with lone pair electron is responsible for the ferroelectric properties was synthesized at normal conditions. This oxide exhibits a ferromagnetic transition around 240 K with a well defined hysteresis loop, and a significant reversible remnant polarizat…
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ABO3 perovskite multiferroic La0.5Bi0.5Mn0.5Fe0.5O3.09 where the B-site cations is responsible for the magnetic properties and the A-site cation with lone pair electron is responsible for the ferroelectric properties was synthesized at normal conditions. This oxide exhibits a ferromagnetic transition around 240 K with a well defined hysteresis loop, and a significant reversible remnant polarization below 67K similar to ferroelectric behavior. The magnetic interaction is interpreted by the ferromagnetic Fe3+-O-Mn3+ and antiferromagnetic Fe3+(Mn3+)-O-Fe3+(Mn3+) interactions competed each other, whereas the ferroelectricity is predominantly due to the polar nature introduced by the 6s2 lone pair of Bi3+ cations
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Submitted 26 June, 2008;
originally announced June 2008.
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Effect of magnetic field and temperature on the ferroelectric loop in MnWO4
Authors:
Bohdan Kundys,
Charles Simon,
Christine Martin
Abstract:
The ferroelectric properties of MnWO4 single crystal have been investigated. Despite a relatively low remanent polarization, we show that the sample is ferroelectric. The shape of the ferroelectric loop of MnWO4 strongly depends on magnetic field and temperature. While its dependence does not directly correlate with the magnetocapacitance effect before the paraelectric transition, the effect of…
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The ferroelectric properties of MnWO4 single crystal have been investigated. Despite a relatively low remanent polarization, we show that the sample is ferroelectric. The shape of the ferroelectric loop of MnWO4 strongly depends on magnetic field and temperature. While its dependence does not directly correlate with the magnetocapacitance effect before the paraelectric transition, the effect of magnetic field on the ferroelectric polarization loop supports magnetoelectric coupling.
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Submitted 2 June, 2008;
originally announced June 2008.
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Interfacial contribution to the dielectric response in semiconducting LaBiMn4/3Co2/3O6
Authors:
M. Filippi,
B. Kundys,
R. Ranjith,
A. K. Kundu,
W. Prellier
Abstract:
Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization.…
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Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4/3Co2/3O6. Colossal dielectric permittivity often is measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution then can be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples.
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Submitted 28 April, 2008;
originally announced April 2008.
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Magnetic field induced ferroelectric loop in Bi0.75Sr0.25FeO3
Authors:
Bohdan Kundys,
Antoine Maignan,
Christine Martin,
Ninh Nguyen,
Charles Simon
Abstract:
Magnetic field induced ferroelectric hysteresis loop observed in Bi0.75Sr0.25FeO3-delta is of prime importance. The coexistence of antiferromagnetism and weak ferromagnetism is responsible for the original magnetoelastic and magnetoferroelectric properties. Upon external magnetic field application, the existence of a magnetostrictive effect supports a structural transition towards a homogeneous…
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Magnetic field induced ferroelectric hysteresis loop observed in Bi0.75Sr0.25FeO3-delta is of prime importance. The coexistence of antiferromagnetism and weak ferromagnetism is responsible for the original magnetoelastic and magnetoferroelectric properties. Upon external magnetic field application, the existence of a magnetostrictive effect supports a structural transition towards a homogeneous antiferromagnetic and ferroelectric phase. The magnetic field induced polarization is among the highest reported for BiFeO3 based systems in either thin film or bulk forms (Pr=96 microC/cm2 at 10T) while the ferroelectric coercive field is among the lowest reported (Hc=661(V/cm) at 10T). These properties make this material very attractive for technical applications.
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Submitted 20 February, 2008;
originally announced February 2008.
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Ferromagnetism and magneto-dielectric effect in insulating LaBiMn4/3Co2/3O6 thin films
Authors:
R. Ranjith,
Asish K. Kundu,
M. Filippi,
B. Kundys,
W. Prellier,
B. Raveau,
J. Laverdiere,
M. P. Singh,
S. Jandl
Abstract:
High quality epitaxial thin films of LaBiMn4/3Co2/3O6 perovskite were fabricated on (001)-oriented SrTiO3 and LaAlO3 substrates by the pulsed laser deposition technique. Magnetization measurements reveal a strong magnetic anisotropy and a ferromagnetic behavior that is in agreement with a super-exchange interaction between Mn4+ and Co2+ ions, which are randomly distributed in the B-site. A disti…
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High quality epitaxial thin films of LaBiMn4/3Co2/3O6 perovskite were fabricated on (001)-oriented SrTiO3 and LaAlO3 substrates by the pulsed laser deposition technique. Magnetization measurements reveal a strong magnetic anisotropy and a ferromagnetic behavior that is in agreement with a super-exchange interaction between Mn4+ and Co2+ ions, which are randomly distributed in the B-site. A distinct anomaly is observed in the dielectric measurements at 130K corresponding to the onset of the magnetic ordering, suggesting a coupling. Above this temperature, the extrinsic Maxwell-Wagner effect is dominating. Theses results are explained using the Raman spectroscopic studies indicating a weak spin-lattice interaction around this magnetic transition.
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Submitted 22 January, 2008;
originally announced January 2008.
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Periodicity-dependence of the ferroelectric properties in BiFeO3/SrTiO3 multiferroic superlattices
Authors:
R. Ranjith,
B. Kundys,
W. Prellier
Abstract:
Artificial superlattices of (BiFeO3)m(SrTiO3)m (m= 1 to 10 unit cells) consisting of multiferroic BiFeO3 and insulating SrTiO3 layers were fabricated on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The remnant polarization and leakage current behavior were studied varying the periodicity (8-80A) of the superlattice. The leakage current was reduced by few orders of magnitude on incr…
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Artificial superlattices of (BiFeO3)m(SrTiO3)m (m= 1 to 10 unit cells) consisting of multiferroic BiFeO3 and insulating SrTiO3 layers were fabricated on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The remnant polarization and leakage current behavior were studied varying the periodicity (8-80A) of the superlattice. The leakage current was reduced by few orders of magnitude on increase of periodicity compared to single layer BiFeO3 thin films. Reduced leakage and intrinsic polarization hysteresis was observed and was confirmed by PUND analysis for periodicities in the range 20-60A. The leakage current was observed to be dominated by space charge limited conduction
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Submitted 25 October, 2007;
originally announced October 2007.
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Dielectric catastrophe at the magnetic field induced insulator to metal transition in Pr1-xCaxMnO3 (x=0.30, 0.37) crystals
Authors:
B. Kundys,
N. Bellido,
C. Martin,
Ch. Simon
Abstract:
The dielectric permittivity and resistivity have been measured simultaneously as a function of magnetic field in Pr1-xCaxMnO3 crystals with different doping. A huge increase of dielectric permittivity was detected near percolation threshold. The dielectric and conductive properties are found to be mutually correlated throughout insulator to metal transition evidencing the dielectric catastrophe…
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The dielectric permittivity and resistivity have been measured simultaneously as a function of magnetic field in Pr1-xCaxMnO3 crystals with different doping. A huge increase of dielectric permittivity was detected near percolation threshold. The dielectric and conductive properties are found to be mutually correlated throughout insulator to metal transition evidencing the dielectric catastrophe phenomenon. Data are analyzed in a framework of Maxwell-Garnett theory and the Mott-Hubbard theory attributed to the role of strong Coulomb interactions.
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Submitted 11 July, 2006;
originally announced July 2006.
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Magnetic phase diagram copper metaborate CuB_2O_4 in magnetic field parallel c-axis: resonant, magnetic and magnetoelastic investigations
Authors:
A. Pankrats,
G. Petrakovskii,
V. Tugarinov,
K. Sablina,
L. Bezmaternykh,
L. Szymczak,
M. Baran,
B. Kundys,
A. Nabialek
Abstract:
The magnetic phase diagram in a single crystal of copper metaborate CuB_2O_4 in a magnetic field parallel to a tetragonal axis $c$ has been investigated.
From the resonant, magnetic and magnetostrictive data the phase diagram of CuB_2O_4 on a plane ``temperature - magnetic field'' is constructed. The magnetic incommensurate-commensurate phase transition is caused by the saturation of weak subs…
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The magnetic phase diagram in a single crystal of copper metaborate CuB_2O_4 in a magnetic field parallel to a tetragonal axis $c$ has been investigated.
From the resonant, magnetic and magnetostrictive data the phase diagram of CuB_2O_4 on a plane ``temperature - magnetic field'' is constructed. The magnetic incommensurate-commensurate phase transition is caused by the saturation of weak subsystem of copper ions in the strong magnetic field $H\|c$.
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Submitted 23 June, 2005;
originally announced June 2005.
