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Electron-phonon coupling in single-layer MoS2
Authors:
Sanjoy K. Mahatha,
Arlette S. Ngankeu,
Nicki Frank Hinsche,
Ingrid Mertig,
Kevin Guilloy,
Peter L. Matzen,
Marco Bianchi,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Daniel Lizzit,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Philip Hofmann
Abstract:
The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye mo…
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The electron-phonon coupling strength in the spin-split valence band maximum of single-layer MoS$_2$ is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron-phonon coupling parameter $λ$ are obtained by measuring the linewidth of the spin-split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of $λ$ for the upper and lower spin-split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS$_2$. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS$_2$ on Au(111). The fact that the absolute valence band maximum in single-layer MoS$_2$ at K is almost degenerate with the local valence band maximum at $Γ$ can potentially be used to tune the strength of the electron-phonon interaction in this material.
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Submitted 18 November, 2018;
originally announced November 2018.
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Secondary electron emission and yield spectra of metals from Monte Carlo simulations and experiments
Authors:
Martina Azzolini,
Marco Angelucci,
Roberto Cimino,
Rosanna Larciprete,
Nicola M. Pugno,
Simone Taioli,
Maurizio Dapor
Abstract:
In this work, we present a computational method, based on the Monte Carlo statistical approach, for calculating electron energy emission and yield spectra of metals, such as copper, silver and gold. The calculation of these observables proceeds via the Mott theory to deal with the elastic scattering processes, and by using the Ritchie dielectric approach to model the electron inelastic scattering…
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In this work, we present a computational method, based on the Monte Carlo statistical approach, for calculating electron energy emission and yield spectra of metals, such as copper, silver and gold. The calculation of these observables proceeds via the Mott theory to deal with the elastic scattering processes, and by using the Ritchie dielectric approach to model the electron inelastic scattering events. In the latter case, the dielectric function, which represents the starting point for the evaluation of the energy loss, is obtained from experimental reflection electron energy loss spectra. The generation of secondary electrons upon ionization of the samples is also implemented in the calculation. A remarkable agreement is obtained between both theoretical and experimental electron emission spectra and yield curves.
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Submitted 4 September, 2018;
originally announced September 2018.
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Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
Authors:
Luca Bignardi,
Daniel Lizzit,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Moritz Ewert,
Lars Buß,
Jens Falta,
Jan Ingo Flege,
Alessandro Baraldi,
Rosanna Larciprete,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, s…
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We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.
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Submitted 19 September, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Epitaxial Growth of Single-Orientation High-Quality MoS$_2$ Monolayers
Authors:
Harsh Bana,
Elisabetta Travaglia,
Luca Bignardi,
Paolo Lacovig,
Charlotte E. Sanders,
Maciej Dendzik,
Matteo Michiardi,
Marco Bianchi,
Daniel Lizzit,
Francesco Presel,
Dario De Angelis,
Nicoleta Apostol,
Pranab Kumar Das,
Jun Fujii,
Ivana Vobornik,
Rosanna Larciprete,
Alessandro Baraldi,
Philip Hofmann,
Silvano Lizzit
Abstract:
We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- a…
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We present a study on the growth and characterization of high-quality single-layer MoS$_2$ with a single orientation, i.e. without the presence of mirror domains. This single orientation of the MoS$_2$ layer is established by means of x-ray photoelectron diffraction. The high quality is evidenced by combining scanning tunneling microscopy with x-ray photoelectron spectroscopy measurements. Spin- and angle-resolved photoemission experiments performed on the sample revealed complete spin-polarization of the valence band states near the K and -K points of the Brillouin zone. These findings open up the possibility to exploit the spin and valley degrees of freedom for encoding and processing information in devices that are based on epitaxially grown materials.
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Submitted 9 February, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Photoemission Investigation of Oxygen Intercalated Epitaxial Graphene on Ru(0001)
Authors:
Søren Ulstrup,
Paolo Lacovig,
Fabrizio Orlando,
Daniel Lizzit,
Luca Bignardi,
Matteo Dalmiglio,
Marco Bianchi,
Federico Mazzola,
Alessandro Baraldi,
Rosanna Larciprete,
Philip Hofmann,
Silvano Lizzit
Abstract:
We study the formation of epitaxial graphene on Ru(0001) using fast x-ray photoelectron spectroscopy during the growth process. The assignment of different C 1s and Ru 3d core level components and their evolution during the growth process gives a detailed insight into the graphene formation and the strongly varying graphene-Ru interaction strength within the large moire unit cell. Subsequent inter…
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We study the formation of epitaxial graphene on Ru(0001) using fast x-ray photoelectron spectroscopy during the growth process. The assignment of different C 1s and Ru 3d core level components and their evolution during the growth process gives a detailed insight into the graphene formation and the strongly varying graphene-Ru interaction strength within the large moire unit cell. Subsequent intercalation of oxygen can be achieved at elevated temperature and the core level spectra show a conversion of the strongly corrugated to quasi free-standing graphene, characterised by a single narrow C 1s component. This conversion and the accompanying flattening of the graphene layer is also confirmed by x-ray photoelectron diffraction. The effect of oxygen intercalation on the electronic structure is studied using angle-resolved photoemission of the valence band states. For graphene/Ru(0001), the strong graphene-substrate hybridisation disrupts the π-band dispersion but oxygen intercalation fully restores the π-band with a strong p-doping that shifts the Dirac point 785 meV above the Fermi level. The doping of the system is highly tunable, as the additional exposure to rubidium can convert the carrier filling to n-type with the Dirac point 970 meV below the Fermi level.
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Submitted 31 January, 2018;
originally announced February 2018.
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Electron-phonon coupling in the spin-split valence band of single layer WS$_2$
Authors:
Nicki Frank Hinsche,
Arlette S. Ngankeu,
Kevin Guilloy,
Sanjoy K. Mahatha,
Antonija Grubišić Čabo,
Marco Bianchi,
Maciej Dendzik,
Charlotte E. Sanders,
Jill A. Miwa,
Harsh Bana,
Elisabetta Travaglia,
Paolo Lacovig,
Luca Bignardi,
Rosanna Larciprete,
Alessandro Baraldi,
Silvano Lizzit,
Kristian Sommer Thygesen,
Philip Hofmann
Abstract:
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is stud…
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The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.
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Submitted 17 June, 2017;
originally announced June 2017.
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The Chemical Origin of SEY at Technical Surfaces
Authors:
R. Larciprete,
D. R. Grosso,
M. Commisso,
R. Flammini,
R. Cimino
Abstract:
The secondary emission yield (SEY) properties of colaminated Cu samples for LHC beam screens are correlated to the surface chemical composition determined by X-ray photoelectron spectroscopy. The surface of the "as received" samples is characterized by the presence of significant quantities of contaminating adsorbates and by the maximum of the SEY curve (dmax) being as high as 2.2. After extended…
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The secondary emission yield (SEY) properties of colaminated Cu samples for LHC beam screens are correlated to the surface chemical composition determined by X-ray photoelectron spectroscopy. The surface of the "as received" samples is characterized by the presence of significant quantities of contaminating adsorbates and by the maximum of the SEY curve (dmax) being as high as 2.2. After extended electron scrubbing at kinetic energy of 10 and 500 eV, the dmax value drops to the ultimate values of 1.35 and 1.1, respectively. In both cases the surface oxidized phases are significantly reduced, whereas only in the sample scrubbed at 500 eV the formation of a graphitic-like C layer is observed. We find that the electron scrubbing of technical Cu surfaces can be described as occurring in two steps, where the first step consists in the electron induced desorption of weakly bound contaminants that occurs indifferently at 10 and at 500 eV and corresponds to a partial decrease of dmax, and the second step, activated by more energetic electrons and becoming evident at high doses, which increases the number of graphitic-like C-C bonds via the dissociation of adsorbates already contaminating the "as received" surface or accumulating on this surface during irradiation. Our results demonstrate how the kinetic energy of impinging electrons is a crucial parameter when conditioning technical surfaces of Cu and other metals by means of electron induced chemical processing.
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Submitted 6 August, 2013;
originally announced August 2013.
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Transfer-free electrical insulation of epitaxial graphene from its metal substrate
Authors:
Silvano Lizzit,
Rosanna Larciprete,
Paolo Lacovig,
Matteo Dalmiglio,
Fabrizio Orlando,
Alessandro Baraldi,
Lauge Gammelgaard,
Lucas Barreto,
Marco Bianchi,
Edward Perkins,
Philip Hofmann
Abstract:
High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a step-wise intercalation of silicon and oxygen, and the eventual formation of a SiO$_2$ layer between the graphene and the metal. We follow the reaction steps…
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High-quality, large-area epitaxial graphene can be grown on metal surfaces but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a step-wise intercalation of silicon and oxygen, and the eventual formation of a SiO$_2$ layer between the graphene and the metal. We follow the reaction steps by x-ray photoemission spectroscopy and demonstrate the electrical insulation using a nano-scale multipoint probe technique.
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Submitted 10 August, 2012;
originally announced August 2012.
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Band dispersion in the deep 1s core level of graphene
Authors:
S. Lizzit,
G. Zampieri,
L. Petaccia,
R. Larciprete,
P. Lacovig,
E. D. L. Rienks,
A. Baraldi,
Ph. Hofmann
Abstract:
Chemical bonding in molecules and solids arises from the overlap of valence electron wave functions, forming extended molecular orbitals and dispersing Bloch states, respectively. Core electrons with high binding energies, on the other hand, are localized to their respective atoms and their wave functions do not overlap significantly. Here we report the observation of band formation and consider…
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Chemical bonding in molecules and solids arises from the overlap of valence electron wave functions, forming extended molecular orbitals and dispersing Bloch states, respectively. Core electrons with high binding energies, on the other hand, are localized to their respective atoms and their wave functions do not overlap significantly. Here we report the observation of band formation and considerable dispersion (up to 60 meV) in the $1s$ core level of the carbon atoms forming graphene, despite the high C $1s$ binding energy of $\approx$ 284 eV. Due to a Young's double slit-like interference effect, a situation arises in which only the bonding or only the anti-bonding states is observed for a given photoemission geometry.
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Submitted 27 January, 2010; v1 submitted 26 January, 2010;
originally announced January 2010.
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Electronic structure and molecular orientation of a Zn-tetra-phenyl porphyrin multilayer on Si(111)
Authors:
C. Castellarin Cudia,
P. Vilmercati,
R. Larciprete,
C. Cepek,
G. Zampieri,
L. Sangaletti,
S. Pagliara,
A. Verdini,
A. Cossaro,
L. Floreano,
A. Morgante,
L. Petaccia,
S. Lizzit,
C. Battocchio,
G. Polzonetti,
A. Goldoni
Abstract:
The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first time we have revealed and assigned the fine structures in the electronic spectra related to the HOMOs and LUMOs states. This is particularly important in order to understand the orbital interactions, the bond formation an…
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The electronic properties and the molecular orientation of Zn-tetraphenyl-porphyrin films deposited on Si(111) have been investigated using synchrotron radiation. For the first time we have revealed and assigned the fine structures in the electronic spectra related to the HOMOs and LUMOs states. This is particularly important in order to understand the orbital interactions, the bond formation and the evolution of the electronic properties with oxidation or reduction of the porphyrins in supramolecular donor-acceptor complexes used in photovoltaic devices.
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Submitted 7 September, 2005;
originally announced September 2005.
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Characterization of high-quality MgB2(0001) epitaxial films on Mg(0001)
Authors:
Luca Petaccia,
Cinzia Cepek,
Silvano Lizzit,
Rosanna Larciprete,
Roberto Macovez,
Massimo Sancrotti,
Andrea Goldoni
Abstract:
High-grade MgB2(0001) films were grown on Mg(0001) by means of ultra-high-vacuum molecular beam epitaxy. Low energy electron diffraction and x-ray diffraction data indicate that thick films are formed by epitaxially oriented grains with MgB2 bulk structure. The quality of the films allowed angle-resolved photoemission and polarization dependent x-ray absorption measurements. For the first time,…
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High-grade MgB2(0001) films were grown on Mg(0001) by means of ultra-high-vacuum molecular beam epitaxy. Low energy electron diffraction and x-ray diffraction data indicate that thick films are formed by epitaxially oriented grains with MgB2 bulk structure. The quality of the films allowed angle-resolved photoemission and polarization dependent x-ray absorption measurements. For the first time, we report the band mapping along the Gamma-A direction and the estimation of the electron-phonon coupling constant l ~ 0.55 for the surface state electrons.
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Submitted 7 September, 2005;
originally announced September 2005.
