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Optically Active Quantum Dots in Monolayer WSe$_2$
Authors:
Ajit Srivastava,
Meinrad Sidler,
Adrien V. Allain,
Dominik S. Lembke,
Andras Kis,
Atac Imamoglu
Abstract:
Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meanwhile, transition metal dichalcogenide (TMD) monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large band ga…
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Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spin qubits and propagating single photons. In the meanwhile, transition metal dichalcogenide (TMD) monolayers have moved to the forefront of solid-state research due to their unique band structure featuring a large band gap with degenerate valleys and non-zero Berry curvature. Here we report the observation of quantum dots in monolayer tungsten-diselenide with an energy that is 20 to 100 meV lower than that of two dimensional excitons. Photon antibunching in second-order photon correlations unequivocally demonstrates the zero-dimensional anharmonic nature of these quantum emitters. The strong anisotropic magnetic response of the spatially localized emission peaks strongly indicates that radiative recombination stems from localized excitons that inherit their electronic properties from the host TMD. The large $\sim$ 1 meV zero-field splitting shows that the quantum dots have singlet ground states and an anisotropic confinement most likely induced by impurities or defects in the host TMD. Electrical control in van der Waals heterostructures and robust spin-valley degree of freedom render TMD quantum dots promising for quantum information processing.
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Submitted 31 October, 2014;
originally announced November 2014.
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MoS2 Transistors Operating at Gigahertz Frequencies
Authors:
Daria Krasnozhon,
Dominik Lembke,
Clemens Nyffeler,
Yusuf Leblebici,
Andras Kis
Abstract:
The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, logic circuits and optoelectronic devices have been demonstrated using u…
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The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulphide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, logic circuits and optoelectronic devices have been demonstrated using ultrathin MoS2, very little is known about their performance at high frequencies where commercial devices are expected to function. Here, we report on top-gated MoS2 transistors operating in the gigahertz range of frequencies. Our devices show cutoff frequencies reaching 6 GHz. The presence of a band gap also gives rise to current saturation, allowing power and voltage gain, all in the gigahertz range. This shows that MoS2 could be an interesting material for realizing high-speed amplifiers and logic circuits with device scaling expected to result in further improvement of performance. Our work represents the first step in the realization of high-frequency analog and digital circuits based on two-dimensional semiconductors.
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Submitted 23 September, 2014;
originally announced September 2014.
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Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
Authors:
Ajit Srivastava,
Meinrad Sidler,
Adrien V. Allain,
Dominik S. Lembke,
Andras Kis,
Atac Imamoglu
Abstract:
A monolayer of a transition metal dichalcogenide (TMD) such as WSe$_2$ is a two-dimensional (2D) direct band-gap valley-semiconductor having an effective Honeycomb lattice structure with broken inversion symmetry. The inequivalent valleys in the Brillouin zone could be selectively addressed using circularly-polarized light fields, suggesting the possibility for magneto-optical measurement and mani…
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A monolayer of a transition metal dichalcogenide (TMD) such as WSe$_2$ is a two-dimensional (2D) direct band-gap valley-semiconductor having an effective Honeycomb lattice structure with broken inversion symmetry. The inequivalent valleys in the Brillouin zone could be selectively addressed using circularly-polarized light fields, suggesting the possibility for magneto-optical measurement and manipulation of the valley pseudospin degree of freedom. Here we report such experiments that demonstrate the valley Zeeman effect -- strongly anisotropic lifting of the degeneracy of the valley pseudospin degree of freedom using an external magnetic field. While the valley-splitting measured using the exciton transition is consistent with the difference of the conduction and valence band orbital magnetic moments, the trion transition exhibits an unexpectedly large valley Zeeman effect which cannot be understood using an independent electron-hole picture. Instead, we find an explanation using the recently predicted large Berry curvature and the associated magnetic moment for the electron-hole exchange interaction modified trion dispersion. Our results raise the possibility of observing optical excitation induced valley Hall effect in monolayer TMDs or topological states of photons strongly coupled to trion excitations in a microcavity.
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Submitted 9 July, 2014;
originally announced July 2014.
