Showing 1–50 of 100 results for author: Lemme, M

Piezoresistive PtSe$_2$ pressure sensors with reliable high sensitivity and their integration into CMOS ASIC substrates

Authors: Sebastian Lukas, Nico Rademacher, Sofía Cruces, Michael Gross, Eva Desgué, Stefan Heiserer, Nikolas Dominik, Maximilian Prechtl, Oliver Hartwig, Cormac Ó Coileáin, Tanja Stimpel-Lindner, Pierre Legagneux, Arto Rantala, Juha-Matti Saari, Miika Soikkeli, Georg S. Duesberg, Max C. Lemme

Abstract: Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The present work demonstrates pressure sensors employing large-scale-synthesized 2D platinum diselenide (PtSe${_2}$) films as piezoresistive membranes sup… ▽ More Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The present work demonstrates pressure sensors employing large-scale-synthesized 2D platinum diselenide (PtSe${_2}$) films as piezoresistive membranes supported only by a thin polymer layer. We investigate three different synthesis methods with contrasting growth parameters and establish a reliable high yield fabrication process for suspended PtSe${_2}$/PMMA membranes across sealed cavities. The pressure sensors reproducibly display sensitivities above 6 x 10${^4}$ kPa${^{-1}}$. We show that the sensitivity clearly depends on the membrane diameter and the piezoresistive gauge factor of the PtSe${_2}$ film. Reducing the total device size by decreasing the number of membranes within a device leads to a significant increase in the area-normalized sensitivity. This allows the manufacturing of pressure sensors with high sensitivity but a much smaller device footprint than the current state-of-the-art MEMS technology. We further integrate PtSe${_2}$ pressure sensors with CMOS technology, improving the technological readiness of PtSe${_2}$-based MEMS and NEMS devices. △ Less

Submitted 6 September, 2024; v1 submitted 4 September, 2024; originally announced September 2024.

Comments: 42 pages

High-yield large-scale suspended graphene membranes over closed cavities for sensor applications

Authors: Sebastian Lukas, Ardeshir Esteki, Nico Rademacher, Vikas Jangra, Michael Gross, Zhenxing Wang, Ha Duong Ngo, Manuel Bäuscher, Piotr Mackowiak, Katrin Höppner, Dominique Wehenkel, Richard van Rijn, Max C. Lemme

Abstract: Suspended membranes of monoatomic graphene exhibit great potential for applications in electronic and nanoelectromechanical devices. In this work, a "hot and dry" transfer process is demonstrated to address the fabrication and patterning challenges of large-area graphene membranes on top of closed, sealed cavities. Here, "hot" refers to the use of high temperature during transfer, promoting the ad… ▽ More Suspended membranes of monoatomic graphene exhibit great potential for applications in electronic and nanoelectromechanical devices. In this work, a "hot and dry" transfer process is demonstrated to address the fabrication and patterning challenges of large-area graphene membranes on top of closed, sealed cavities. Here, "hot" refers to the use of high temperature during transfer, promoting the adhesion. Additionally, "dry" refers to the absence of liquids when graphene and target substrate are brought into contact. The method leads to higher yields of intact suspended monolayer CVD graphene and artificially stacked double-layer CVD graphene membranes than previously reported. The yield evaluation is performed using neural-network-based object detection in SEM images, ascertaining high yields of intact membranes with large statistical accuracy. The suspended membranes are examined by Raman tomography and AFM. The method is verified by applying the suspended graphene devices as piezoresistive pressure sensors. Our technology advances the application of suspended graphene membranes and can be extended to other two-dimensional (2D) materials. △ Less

Submitted 29 August, 2024; originally announced August 2024.

Comments: 30 pages of manuscript plus 17 pages of Supporting Information

Sputtered Aluminum Nitride Waveguides for the Telecommunication Spectrum with less than 0.16 dBでしべる/cm Loss

Authors: Radhakant Singh, Mohit Raghuwanshi, Balasubramanian Sundarapandian, Rijil Thomas, Lutz Kirste, Stephan Suckow, Max Lemme

Abstract: We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $μみゅー$m buried silicon oxide layer using reactive DC magnetron sputtering at a temperature of 700°C. The resulting uncladded polycrystalline waveguides exhibit propagation losses of 0.137 $\pm$ 0.005 dBでしべる/cm at wavelengths of 1310 nm… ▽ More We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $μみゅー$m buried silicon oxide layer using reactive DC magnetron sputtering at a temperature of 700°C. The resulting uncladded polycrystalline waveguides exhibit propagation losses of 0.137 $\pm$ 0.005 dBでしべる/cm at wavelengths of 1310 nm and 0.154 $\pm$ 0.008 dBでしべる/cm at a wavelength of 1550 nm in the TE polarization. These results are the best reported for sputtered AlN waveguides in the C-band and the first report in the O-band. These performances are comparable to those of the best-reported AlN waveguides, which are epitaxially grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. Our findings highlight the potential of sputtered AlN for photonic platforms working in the telecom spectrum. △ Less

Submitted 19 August, 2024; originally announced August 2024.

Comments: 12 pages

Volatile MoS${_2}$ Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Authors: Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee, Lukas Völkel, Dennis Braun, Annika Grundmann, Ke Ran, Enrique G. Marín, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Andrés Godoy, Alwin Daus, Max C. Lemme

Abstract: Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS${_2}$)-based volatile RS devices with silver (Ag) ion migration have bee… ▽ More Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS${_2}$)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS${_2}$ flakes requiring a forming step to enable RS. Here, we present volatile RS with multilayer MoS${_2}$ grown by metal-organic chemical vapor deposition (MOCVD) with repeatable forming-free operation. The devices show highly reproducible volatile RS with low operating voltages of approximately 2 V and fast switching times down to 130 ns considering their micrometer scale dimensions. We investigate the switching mechanism based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, we develop a physics-based compact model and explore the implementation of our volatile memristors as artificial neurons in neuromorphic systems. △ Less

Submitted 19 August, 2024; originally announced August 2024.

Comments: 43 pages

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Authors: Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini, Harm Knoops, Bart Macco, Martin Otto, Gordon Rinke, Zhenxing Wang, Ke Ran, Joachim Mayer, Annika Grundmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Alwin Daus, Max C. Lemme

Abstract: Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on 2DMs and the tuning of the 2DM doping levels. Here, we report a scalable plasma-enhanced atomic layer deposition (PEALD) process for direct deposition of a non… ▽ More Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on 2DMs and the tuning of the 2DM doping levels. Here, we report a scalable plasma-enhanced atomic layer deposition (PEALD) process for direct deposition of a nonstoichiometric aluminum oxide (AlOX) dielectric, overcoming the damage issues associated with conventional methods. Furthermore, we control the thickness of the dielectric layer to systematically tune the doping level of 2DMs. The experimental results demonstrate successful deposition without detectable damage, as confirmed by Raman spectroscopy and electrical measurements. Our method enables tuning of the Dirac and threshold voltages of back-gated graphene and MoS${_2}$ field-effect transistors (FETs), respectively, while also increasing the charge carrier mobility in both device types. We further demonstrate the method in top-gated MoS${_2}$ FETs with double-stack dielectric layers (AlOX+Al${_2}$O${_3}$), achieving critical breakdown field strengths of 7 MV/cm and improved mobility compared with the back gate configuration. In summary, we present a PEALD process that offers a scalable and low-damage solution for dielectric deposition on 2DMs, opening new possibilities for precise tuning of device characteristics in heterogeneous electronic circuits. △ Less

Submitted 13 August, 2024; originally announced August 2024.

Comments: 28 pages

Ultra-steep slope cryogenic FETs based on bilayer graphene

Authors: E. Icking, D. Emmerich, K. Watanabe, T. Taniguchi, B. Beschoten, M. C. Lemme, J. Knoch, C. Stampfer

Abstract: Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-… ▽ More Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-steep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 $μみゅー$V/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature. △ Less

Submitted 2 August, 2024; originally announced August 2024.

Comments: 22 pages, 18 figures

Measuring the Adhesion of Graphene Flake Networks via Button Shear Tests

Authors: Jorge Eduardo Adatti Estévez, Josef Schätz, Jasper Ruhkopf, Annika Weber, David Tumpold, Alexander Zöpfl, Ulrich Krumbein, Max Christian Lemme

Abstract: Graphene flake-based dispersions are attractive materials for various applications in microelectronics because of their ease of fabrication and the potential to deposit them on diverse substrates. The integration of these materials into conductive networks and microdevices requires thorough knowledge of their mechanical material properties, including adhesion. This paper presents quantitative adhe… ▽ More Graphene flake-based dispersions are attractive materials for various applications in microelectronics because of their ease of fabrication and the potential to deposit them on diverse substrates. The integration of these materials into conductive networks and microdevices requires thorough knowledge of their mechanical material properties, including adhesion. This paper presents quantitative adhesion measurements of graphene flake networks on silicon dioxide (SiO${_2}$) via button shear testing (BST). In this method, shear forces are applied to prefabricated micrometric buttons until they delaminate, providing information about the shear strength of the underlying graphene. We applied BST to graphene flake networks with different flake structures and defect densities. Flat flakes, a flat network structure, and a high flake defect density improve adhesion. We further demonstrate that graphene flake networks have stronger adhesion than chemical vapor deposited monolayer graphene grown on copper and transferred to SiO${_2}$. Hexamethyldisilazane (HMDS) increases the total adhesion force by improving flake network formation. Finally, we provide flake-type-specific delamination patterns by combining BST, optical microscopy, and Raman spectroscopy. We establish BST as a quantitative technique for measuring the adhesion of graphene dispersions and show the crucial role of interflake junctions in the overall adhesion of graphene flake networks. △ Less

Submitted 29 July, 2024; originally announced July 2024.

Comments: 34 pages

Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs

Authors: Eros Reato, Ardeshir Esteki, Benny Ku, Zhenxing Wang, Michael Heuken, Max C. Lemme, Olof Engström

Abstract: A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric conditions, the existence of electron traps in MoS${_2}$ and at the interface between the gate insulator and the thin-film MoS${_2}$ are revealed. Differential… ▽ More A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric conditions, the existence of electron traps in MoS${_2}$ and at the interface between the gate insulator and the thin-film MoS${_2}$ are revealed. Differential conductance and capacitance data of the transistor channels are plotted as 3D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model. △ Less

Submitted 10 July, 2024; originally announced July 2024.

Comments: 24 pages

Hardware Realization of Neuromorphic Computing with a 4-Port Photonic Reservoir for Modulation Format Identification

Authors: Enes Şeker, Rijil Thomas, Guillermo von Hünefeld, Stephan Suckow, Mahdi Kaveh, Gregor Ronniger, Pooyan Safari, Isaac Sackey, David Stahl, Colja Schubert, Johannes Karl Fischer, Ronald Freund, Max C. Lemme

Abstract: The fields of machine learning and artificial intelligence drive researchers to explore energy-efficient, brain-inspired new hardware. Reservoir computing encompasses recurrent neural networks for sequential data processing and matches the performance of other recurrent networks with less training and lower costs. However, traditional software-based neural networks suffer from high energy consumpt… ▽ More The fields of machine learning and artificial intelligence drive researchers to explore energy-efficient, brain-inspired new hardware. Reservoir computing encompasses recurrent neural networks for sequential data processing and matches the performance of other recurrent networks with less training and lower costs. However, traditional software-based neural networks suffer from high energy consumption due to computational demands and massive data transfer needs. Photonic reservoir computing overcomes this challenge with energy-efficient neuromorphic photonic integrated circuits or NeuroPICs. Here, we introduce a reservoir NeuroPIC used for modulation format identification in C-band telecommunication network monitoring. It is built on a silicon-on-insulator platform with a 4-port reservoir architecture consisting of a set of physical nodes connected via delay lines. We comprehensively describe the NeuroPIC design and fabrication, experimentally demonstrate its performance, and compare it with simulations. The NeuroPIC incorporates non-linearity through a simple digital readout and achieves close to 100% accuracy in identifying several configurations of quadrature amplitude modulation formats transmitted over 20 km of optical fiber at 32 GBaud symbol rate. The NeuroPIC performance is robust against fabrication imperfections like waveguide propagation loss, phase randomization, etc. and delay line length variations. Furthermore, the experimental results exceeded numerical simulations, which we attribute to enhanced signal interference in the experimental NeuroPIC output. Our energy-efficient photonic approach has the potential for high-speed temporal data processing in a variety of applications. △ Less

Submitted 19 June, 2024; originally announced June 2024.

Comments: 32 pages, including supporting information

Bimodal Plasmonic Refractive Index Sensors Based on SU-8 Waveguides

Authors: Omkar Bhalerao, Stephan Suckow, Horst Windgassen, Harry Biller, Konstantinos Fotiadis, Stelios Simos, Evangelia Chatzianagnostou, Dimosthenis Spasopoulos, Pratyusha Das, Laurent Markey, Jean-Claude Weeber, Nikos Pleros, Matthias Schirmer, Max C. Lemme

Abstract: Plasmonic refractive index sensors are essential for detecting subtle variations in the ambient environment through surface plasmon interactions. Current efforts utilizing CMOS-compatible, plasmo-photonic Mach-Zehnder interferometers with active power balancing exhibit high sensitivities at the cost of fabrication and measurement complexity. Alternatively, passive bimodal plasmonic interferometers… ▽ More Plasmonic refractive index sensors are essential for detecting subtle variations in the ambient environment through surface plasmon interactions. Current efforts utilizing CMOS-compatible, plasmo-photonic Mach-Zehnder interferometers with active power balancing exhibit high sensitivities at the cost of fabrication and measurement complexity. Alternatively, passive bimodal plasmonic interferometers based on SU-8 waveguides present a cost-effective solution with a smaller device footprint, though they currently lack opto-mechanical isolation due to exposed photonic waveguides. In this work, we introduce innovative polymer-core and polymer-cladded bimodal plasmonic refractive index sensors with high refractive index contrast. Our sensors feature an aluminum stripe, a bilayer SU-8 photonic waveguide core, and the experimental optical cladding polymer SX AR LWL 2.0. They achieve a sensitivity of (6300 $\pm$ 460) nm/RIU (refractive index unit), surpassing both traditional and polymer-based plasmo-photonic sensors. This approach enables integrated, wafer-scale, CMOS-compatible, and low-cost sensors and facilitates plasmonic refractive index sensing platforms for various applications. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Comments: 30 pages

Integrated ultrafast all-optical polariton transistors

Authors: Pietro Tassan, Darius Urbonas, Bartos Chmielak, Jens Bolten, Thorsten Wahlbrink, Max C. Lemme, Michael Forster, Ullrich Scherf, Rainer F. Mahrt, Thilo Stöferle

Abstract: The clock speed of electronic circuits has been stagnant at a few gigahertz for almost two decades because of the breakdown of Dennard scaling, which states that by shrinking the size of transistors they can operate faster while maintaining the same power consumption. Optical computing could overcome this roadblock, but the lack of materials with suitably strong nonlinear interactions needed to re… ▽ More The clock speed of electronic circuits has been stagnant at a few gigahertz for almost two decades because of the breakdown of Dennard scaling, which states that by shrinking the size of transistors they can operate faster while maintaining the same power consumption. Optical computing could overcome this roadblock, but the lack of materials with suitably strong nonlinear interactions needed to realize all-optical switches has, so far, precluded the fabrication of scalable architectures. Recently, microcavities in the strong light-matter interaction regime enabled all-optical transistors which, when used with an embedded organic material, can operate even at room temperature with sub-picosecond switching times, down to the single-photon level. However, the vertical cavity geometry prevents complex circuits with on-chip coupled transistors. Here, by leveraging silicon photonics technology, we show exciton-polariton condensation at ambient conditions in micrometer-sized, fully integrated high-index contrast grating microcavities filled with an optically active polymer. By coupling two resonators and exploiting seeded polariton condensation, we demonstrate ultrafast all-optical transistor action and cascadability. Our experimental findings open the way for scalable, compact all-optical integrated logic circuits that could process optical signals two orders of magnitude faster than their electrical counterparts. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Reducing the metal-graphene contact resistance through laser-induced defects

Authors: Vikas Jangra, Satender Kataria, Max C. Lemme

Abstract: Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specific contact resistance (R{_C}), ranges from a few tens of Ωおめが μみゅーm up to a few kΩおめが μみゅーm. Manufacturable solutions for defining ohmic contacts to graphene remain a subject of research. Here, we report a scalable method based on la… ▽ More Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specific contact resistance (R{_C}), ranges from a few tens of Ωおめが μみゅーm up to a few kΩおめが μみゅーm. Manufacturable solutions for defining ohmic contacts to graphene remain a subject of research. Here, we report a scalable method based on laser irradiation of graphene to reduce the R{_C} in nickel-contacted devices. A laser with a wavelength of λらむだ = 532 nm is used to induce defects at the contact regions, which are monitored \textit{in-situ} using micro-Raman spectroscopy. Physical damage is observed using \textit{ex-situ} atomic force and scanning electron microscopy. The transfer line method (TLM) is used to extract R{_C} from back-gated graphene devices with and without laser treatment under ambient and vacuum conditions. A significant reduction in R{_C} is observed in devices where the contacts are laser irradiated, which scales with the laser power. The lowest R{_C} of about 250 Ωおーむ μみゅーm is obtained for the devices irradiated with a laser power of 20 mW, compared to 900 Ωおーむ μみゅーm for the untreated devices. The reduction is attributed to an increase in defect density, which leads to the formation of crystallite edges and in-plane dangling bonds that enhance the injection of charge carriers from the metal into the graphene. Our work suggests laser irradiation as a scalable technology for R{_C} reduction in graphene and potentially other two-dimensional materials. △ Less

Submitted 11 February, 2024; originally announced February 2024.

Comments: 30 pages

Journal ref: ACS Appl. Electron. Mater. 6, 4883-4890, 2024

Reliable lift-off patterning of graphene dispersions for humidity sensors

Authors: Jorge Eduardo Adatti Estévez, Fabian Hecht, Sebastian Wittmann, Simon Sawallich, Annika Weber, Caterina Travan, Franz Hopperdietzl, Ulrich Krumbein, Max Christian Lemme

Abstract: Dispersion-based graphene materials are promising candidates for various sensing applications. They offer the advantage of relatively simple and fast deposition via spin-coating, Langmuir-Blodgett deposition, or inkjet printing. Film uniformity and reproducibility remain challenging in all of these deposition methods. Here, we demonstrate, characterize, and successfully apply a scalable structurin… ▽ More Dispersion-based graphene materials are promising candidates for various sensing applications. They offer the advantage of relatively simple and fast deposition via spin-coating, Langmuir-Blodgett deposition, or inkjet printing. Film uniformity and reproducibility remain challenging in all of these deposition methods. Here, we demonstrate, characterize, and successfully apply a scalable structuring method for graphene dispersions. The method is based on a standard lift-off process, is simple to implement, and increases the film uniformity of graphene devices. It is also compatible with standard semiconductor manufacturing methods. We investigate two different graphene dispersions via Raman spectroscopy and Atomic Force Microscopy and observe no degradation of the material properties by the structuring process. Furthermore, we achieve high uniformity of the structured patterns and homogeneous graphene flake distribution. Electrical characterizations show reproducible sheet resistance values correlating with material quantity and uniformity. Finally, repeatable humidity sensing is demonstrated with van der Pauw devices, with sensing limits of less than 1% relative humidity. △ Less

Submitted 27 November, 2023; v1 submitted 21 November, 2023; originally announced November 2023.

Comments: 35 pages

Journal ref: Adv. Mater. Interfaces, 11, 2301095, 2024

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors

Authors: Dennis Braun, Mohit D. Ganeriwala, Lukas Völkel, Ke Ran, Sebastian Lukas, Enrique G. Marín, Oliver Hartwig, Maximilian Prechtl, Thorsten Wahlbrink, Joachim Mayer, Georg S. Duesberg, Andrés Godoy, Alwin Daus, Max C. Lemme

Abstract: Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult… ▽ More Two-dimensional (2D) materials are popular candidates for emerging nanoscale devices, including memristors. Resistive switching (RS) in such 2D material memristors has been attributed to the formation and dissolution of conductive filaments created by the diffusion of metal ions between the electrodes. However, the area-scalable fabrication of patterned devices involves polymers that are difficult to remove from the 2D material interfaces without damage. Remaining polymer residues are often overlooked when interpreting the RS characteristics of 2D material memristors. Here, we demonstrate that the parasitic residues themselves can be the origin of RS. We emphasize the necessity to fabricate appropriate reference structures and employ atomic-scale material characterization techniques to properly evaluate the potential of 2D materials as the switching layer in vertical memristors. Our polymer-residue-based memristors exhibit RS typical for a filamentary mechanism with metal ion migration, and their performance parameters are strikingly similar to commonly reported 2D material memristors. This reveals that the exclusive consideration of electrical data without a thorough verification of material interfaces can easily lead to misinterpretations about the potential of 2D materials for memristor applications. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Comments: 30 pages

Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators

Authors: Yury Yu. Illarionov, Theresia Knobloch, Burkay Uzlu, Alexander G. Banshikov, Iliya A. Ivanov, Viktor Sverdlov, Mikhail I. Vexler, Michael Waltl, Zhenxing Wang, Bibhas Manna, Daniel Neumaier, Max C. Lemme, Nikolai S. Sokolov, Tibor Grasser

Abstract: Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stabi… ▽ More Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stability. Previously used amorphous oxides, such as SiO2 and Al2O3, however, typically suffer from oxide dangling bonds at the interface, high surface roughness and numerous border oxide traps. In order to address these challenges, here we use for the first time 2nm thick epitaxial CaF2 as a gate insulator in GFETs. By analyzing device-to-device variability for over 200 devices fabricated in two batches, we find that tens of them show similar gate transfer characteristics. Our statistical analysis of the hysteresis up to 175C has revealed that while an ambient-sensitive counterclockwise hysteresis can be present in some devices, the dominant mechanism is thermally activated charge trapping by border defects in CaF2 which results in the conventional clockwise hysteresis. We demonstrate that both the hysteresis and bias-temperature instabilities in our GFETs with CaF2 are comparable to similar devices with SiO2 and Al2O3. In particular, we achieve a small hysteresis below 0.01 V for equivalent oxide thickness (EOT) of about 1 nm at the electric fields up to 15 MV/cm and sweep times in the kilosecond range. Thus, our results demonstrate that crystalline CaF2 is a promising insulator for highly-stable GFETs. △ Less

Submitted 20 September, 2023; originally announced September 2023.

Button Shear Testing for Adhesion Measurements of 2D Materials

Authors: Josef Schätz, Navin Nayi, Jonas Weber, Christoph Metzke, Sebastian Lukas, Agata Piacentini, Eros Reato, Jürgen Walter, Tim Schaffus, Fabian Streb, Annika Grundmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Stephan Pindl, Max C. Lemme

Abstract: Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, but… ▽ More Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene and hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide (SiO${_2}$) and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on SiO${_2}$ and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying adhesion of 2D materials. △ Less

Submitted 13 March, 2024; v1 submitted 11 September, 2023; originally announced September 2023.

Comments: 51 pages

Journal ref: Nature Communications, 15: 2430, 2024

Graphene thermal infrared emitters integrated into silicon photonic waveguides

Authors: Nour Negm, Sarah Zayouna, Shayan Parhizkar, Pen-Sheng Lin, Po-Han Huang, Stephan Suckow, Stephan Schroeder, Eleonora De Luca, Floria Ottonello Briano, Arne Quellmalz, Georg S. Duesberg, Frank Niklaus, Kristinn B. Gylfason, Max C. Lemme

Abstract: Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters based on semiconductor materials in terms of PIC compatibility, manufacturing costs, and bandwidth. Ideal thermal emitters would radiate directly into the desi… ▽ More Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters based on semiconductor materials in terms of PIC compatibility, manufacturing costs, and bandwidth. Ideal thermal emitters would radiate directly into the desired modes of the PIC waveguides via near-field coupling and would be stable at very high temperatures. Graphene is a semi-metallic two-dimensional material with comparable emissivity to thin metallic thermal emitters. It allows maximum coupling into waveguides by placing it directly into their evanescent fields. Here, we demonstrate graphene mid-IR emitters integrated with photonic waveguides that couple directly into the fundamental mode of silicon waveguides designed for a wavelength of 4,2 μみゅーm relevant for CO${_2}$ sensing. High broadband emission intensity is observed at the waveguide-integrated graphene emitter. The emission at the output grating couplers confirms successful coupling into the waveguide mode. Thermal simulations predict emitter temperatures up to 1000°C, where the blackbody radiation covers the mid-IR region. A coupling efficiency ηいーた, defined as the light emitted into the waveguide divided by the total emission, of up to 68% is estimated, superior to data published for other waveguide-integrated emitters. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Comments: 24 pages

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

Authors: Daniel S. Schneider, Leonardo Lucchesi, Eros Reato, Zhenyu Wang, Agata Piacentini, Jens Bolten, Damiano Marian, Enrique G. Marin, Aleksandra Radenovic, Zhenxing Wang, Gianluca Fiori, Andras Kis, Giuseppe Iannaccone, Daniel Neumaier, Max C. Lemme

Abstract: Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metal… ▽ More Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$Ωおめが$$μみゅー$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits. △ Less

Submitted 5 April, 2024; v1 submitted 3 April, 2023; originally announced April 2023.

Comments: 39 pages

Journal ref: npj 2D Materials and Applications, 8, 35, 2024

Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing

Authors: Sha Li, Zhenxing Wang, Bianca Robertz, Daniel Neumaier, Oihana Txoperena, Arantxa Maestre, Amaia Zurutuza, Chris Bower, Ashley Rushton, Yinglin Liu, Chris Harris, Alexander Bessonov, Surama Malik, Mark Allen, Ivonne Medina-Salazar, Tapani Ryhänen, Max C. Lemme

Abstract: A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at… ▽ More A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistical analysis of electric data shows a high yield (96%) and low variation of the 200 mm scale fabrication. The GFET-QD devices deliver responsivities of 10${^5}$ - 10${^6}$ V/W in a wavelength range from 400 to 1800 nm, at up to 100 frames per second. Spectral sensitivity compares well to that obtained using similar GFET-QD photodetectors. The device concept enables gate-tunable suppression or enhancement of the photovoltage, which may be exploited for electric shutter operation by toggling between the signal capture and shutter states. The devices show good stability at a wide operation range and external quantum efficiency of 20% in the short-wavelength infrared range. Furthermore, an integration solution with complementary metal-oxide-semiconductor technology is presented to realize image-sensor-array chips and a proof-of-concept image system. This work demonstrates the potential for the volume manufacture of infrared photodetectors for a wide range of imaging applications. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Comments: 29 pages

Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes

Authors: Lukas Völkel, Dennis Braun, Melkamu Belete, Satender Kataria, Thorsten Wahlbrink, Ke Ran, Kevin Kistermann, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme

Abstract: The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly speci… ▽ More The two-dimensional (2D) insulating material hexagonal boron nitride (h BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, we investigate the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current-voltage measurements. We propose the formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism. We corroborate our electrical data with TEM analyses to establish temperature-dependent current-voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. Our memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 10${^7}$. △ Less

Submitted 11 March, 2023; v1 submitted 11 January, 2023; originally announced January 2023.

Comments: 39 pages

Journal ref: Advanced Functional Materials, 202300428, 2023

Combined Structural and Plasmonic Enhancement of Nanometer-Thin Film Photocatalysis for Solar-Driven Wastewater Treatment

Authors: Desislava Daskalova, Gonzalo Aguila Flores, Ulrich Plachetka, Michael Möller, Julia Wolters, Thomas Wintgens, Max C. Lemme

Abstract: Titanium dioxide (TiO$_2$) thin films are commonly used as photocatalytic materials. Here, we enhance the photocatalytic activity of devices based on TiO$_2$ by combining nanostructured glass substrates with metallic plasmonic nanostructures. We achieve a three-fold increase of the catalyst's surface area through nanoscale three-dimensional patterning of periodic conical grids, which creates a bro… ▽ More Titanium dioxide (TiO$_2$) thin films are commonly used as photocatalytic materials. Here, we enhance the photocatalytic activity of devices based on TiO$_2$ by combining nanostructured glass substrates with metallic plasmonic nanostructures. We achieve a three-fold increase of the catalyst's surface area through nanoscale three-dimensional patterning of periodic conical grids, which creates a broadband optical absorber. The addition of aluminum and gold activates the structures plasmonically and improves the optical absorption in the TiO$_2$ films to above 70% in the visible and NIR spectral range. We demonstrate the resulting enhancement of the photocatalytic activity with organic dye degradation tests under different light sources. Furthermore, the pharmaceutical drug Carbamazepine, a common water pollutant, is reduced in aqueous solution by up to 48% in 360 minutes. Our approach is scalable and potentially enables future solar-driven wastewater treatment. △ Less

Submitted 24 June, 2023; v1 submitted 7 December, 2022; originally announced December 2022.

Comments: 36 pages

Journal ref: ACS Applied Nano Materials, 6, 15204-15212, 2023

Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

Authors: Himadri Pandey, Jorge Daniel Aguirre Morales, Satender Kataria, Sebastien Fregonese, Vikram Passi, Mario Iannazzo, Thomas Zimmer, Eduard Alarcon, Max C. Lemme

Abstract: We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graph… ▽ More We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, which leads to reduced minimum output conductance values. This results in improved intrinsic voltage gain of the devices when compared to monolayer graphene FETs. We employ a physics based compact model originally developed for Bernal stacked bilayer graphene FETs (BSBGFETs) to explore the observed phenomenon. The improvement in current saturation may be attributed to increased charge carrier density in the channel and thus reduced saturation velocity due to carrier-carrier scattering. △ Less

Submitted 4 December, 2022; originally announced December 2022.

Journal ref: Annalen der Physik, 529 (11), 1700106, 2017

Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line

Authors: A. D. Smith, S. Vaziri, S. Rodriguez, M. Östling, M. C. Lemme

Abstract: A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present experimental results of graphene field effect transistors (GFETs) which were fabricated using this wafer scalable method. The carrier mobilities in these transistors rea… ▽ More A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present experimental results of graphene field effect transistors (GFETs) which were fabricated using this wafer scalable method. The carrier mobilities in these transistors reach up to several hundred cm$^2$V$^{-1}$s$^{-1}$. Further, these devices exhibit current saturation regions similar to graphene devices fabricated using mechanical exfoliation. The overall performance of the GFETs can not yet compete with record values reported for devices based on mechanically exfoliated material. Nevertheless, this large scale approach is an important step towards reliability and variability studies as well as optimization of device aspects such as electrical contacts and dielectric interfaces with statistically relevant numbers of devices. It is also an important milestone towards introducing graphene into wafer scale process lines. △ Less

Submitted 22 November, 2022; originally announced November 2022.

Journal ref: Solid-State Electronics, 108, 61-66, 2015

Contact Resistance Study of Various Metal Electrodes with CVD Graphene

Authors: Amit Gahoi, Stefan Wagner, Andreas Bablich, Satender Kataria, Vikram Passi, Max C. Lemme

Abstract: In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and plat… ▽ More In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Ωおーむμみゅーm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of -40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450°C for 1 hour in argon-95% / hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices. △ Less

Submitted 22 November, 2022; originally announced November 2022.

Journal ref: Solid-State Electronics, Volume 125, November, Pages 234-239, 2016

Phase mask pinholes as spatial filters for laser interference lithography

Authors: Giovanna Capraro, Maxim Lipkin, Michael Möller, Jens Bolten, Max C. Lemme

Abstract: Laser resonators have outputs with Gaussian spatial beam profiles. In laser interference lithography (LIL), using such Gaussian shaped beams leads to an inhomogeneous exposure of the substrate. As a result, dimensions of lithography defined features vary significantly across the substrate. In most LIL setups, pinholes are used as filters to remove optical noise. Following a concept proposed by Har… ▽ More Laser resonators have outputs with Gaussian spatial beam profiles. In laser interference lithography (LIL), using such Gaussian shaped beams leads to an inhomogeneous exposure of the substrate. As a result, dimensions of lithography defined features vary significantly across the substrate. In most LIL setups, pinholes are used as filters to remove optical noise. Following a concept proposed by Hariharan et. al. a phase mask can be added to these pinholes. In theory, this modification results in a more uniform beam profile, and, if applied as spatial filters in LIL, in improved exposure and hence feature size uniformity. Here, we report on the first successful fabrication of such elements and demonstrate their use in an LIL setup to reduce feature dimension variations from 47.2% to 27.5% using standard and modified pinholes, respectively. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Journal ref: Advanced Photonics Research, 4, 2300225, 2023

Integrated Graphene Patch Antenna for Communications at THz Frequencies

Authors: E. P. de Santana, A. K. Wigger, Z. Wang, K. Wang, M. Lemme, S. Abadal, P. H. Bolivar

Abstract: Graphene is an attractive material for communications in the THz range due to its ability to support surface plasmon polaritons. This enables a graphene antenna to be smaller in size than its metallic counterpart. In addition, the possibility to control the graphene conductivity during operation by an applied bias leads to the tunability of the resonant frequency of graphene antennas. Graphene-bas… ▽ More Graphene is an attractive material for communications in the THz range due to its ability to support surface plasmon polaritons. This enables a graphene antenna to be smaller in size than its metallic counterpart. In addition, the possibility to control the graphene conductivity during operation by an applied bias leads to the tunability of the resonant frequency of graphene antennas. Graphene-based antennas integrated into transceivers working at THz frequencies may lead to faster and more efficient devices. In this work, we design and simulate a graphene patch antenna that can be integrated into transceivers by through-substrate vias. The tuning of the resonant frequency is also studied by simulations. △ Less

Submitted 11 October, 2022; originally announced October 2022.

Comments: Published in: 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

Journal ref: 2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

Assessment of wafer-level transfer techniques of graphene with respect to semiconductor industry requirements

Authors: Sebastian Wittmann, Stephan Pindl, Simon Sawallich, Michael Nagel, Alexander Michalski, Himadri Pandey, Ardeshir Esteki, Satender Kataria, Max C. Lemme

Abstract: Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate to another desired substrate. This key step for device integration must be applicable at the wafer level and meet the stringent requirements of semiconductor fabrication lines. In this work, wet and semidry transfer (i.… ▽ More Graphene is a promising candidate for future electronic applications. Manufacturing graphene-based electronic devices typically requires graphene transfer from its growth substrate to another desired substrate. This key step for device integration must be applicable at the wafer level and meet the stringent requirements of semiconductor fabrication lines. In this work, wet and semidry transfer (i.e. wafer bonding) are evaluated regarding wafer scalability, handling, potential for automation, yield, contamination and electrical performance. A wafer scale tool was developed to transfer graphene from 150 mm copper foils to 200 mm silicon wafers with-out adhesive intermediate polymers. The transferred graphene coverage ranged from 97.9% to 99.2% for wet transfer and from 17.2% to 90.8% for semidry transfer, with average cop-per contaminations of 4.7x10$^{13}$ (wet) and 8.2x10$^{12}$ atoms/cm$^2$ (semidry). The corresponding electrical sheet resistance extracted from terahertz time-domain spectroscopy varied from 450 to 550 $Ωおめが/sq$ for wet transfer and from 1000 to 1650 $Ωおめが/sq$ for semidry transfer. Although wet transfer is superior in terms of yield, carbon contamination level and electrical quality, wafer bonding yields lower copper contamination levels and provides scalability due to existing in-dustrial tools and processes. Our conclusions can be generalized to all two-dimensional (2D) materials. △ Less

Submitted 29 September, 2022; originally announced September 2022.

Journal ref: Advanced Materials Technologies, 2201587, 2023

Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer

Authors: Barbara Canto, Martin Otto, Michael J. Powell, Vitaliy Babenko, Aileen O Mahony, Harm Knoops, Ravi S. Sundaram, Stephan Hofmann, Max C. Lemme, Daniel Neumaier

Abstract: The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphe… ▽ More The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films. △ Less

Submitted 24 August, 2022; originally announced August 2022.

Journal ref: Adv. Mater. Technol.2021, 6, 2100489

AFM-based Hamaker Constant Determination with Blind Tip Reconstruction

Authors: Benny Ku, Ferdinandus van de Wetering, Jens Bolten, Bart Stel, Mark A. van de Kerkhof, Max C. Lemme

Abstract: Particle contamination of extreme ultraviolet (EUV) photomasks is one of the numerous challenges in nanoscale semiconductor fabrication, since it can lead to systematic device failures when disturbed patterns are projected repeatedly onto wafers during EUV exposure. Understanding adhesion of particle contamination is key in devising a strategy for cleaning of photomasks. In this work, particle con… ▽ More Particle contamination of extreme ultraviolet (EUV) photomasks is one of the numerous challenges in nanoscale semiconductor fabrication, since it can lead to systematic device failures when disturbed patterns are projected repeatedly onto wafers during EUV exposure. Understanding adhesion of particle contamination is key in devising a strategy for cleaning of photomasks. In this work, particle contamination is treated as a particle-plane problem in which surface roughness and the interacting materials have major influences. For this purpose, we perform vacuum atomic force microscopy (AFM) contact measurements to quantify the van der Waals (vdW) forces between tip and sample. We introduce this as a vacuum AFM-based methodology that combines numerical Hamaker theory and Blind Tip Reconstruction (BTR). We have determined the Hamaker constants of $15x10^{-20} J$ and $13x10^{-20} J$ for the material systems of a silicon (Si) tip with both aluminum oxide ($Al_{2}O_{3}$) and native silicon dioxide ($SiO_{2}$) on Si substrates, respectively. Our methodology allows an alternative, quick and low-cost approach to characterize the Hamaker constant within the right order of magnitude for any material combination. △ Less

Submitted 14 August, 2022; originally announced August 2022.

Journal ref: Advanced Materials Technologies, 2200411, 2022

Graphene coating of Nafion$^{(R)}$ membranes for enhanced fuel cell performance

Authors: Jasper Ruhkopf, Ulrich Plachetka, Michael Moeller, Oliver Pasdag, Ivan Radev, Volker Peinecke, Marco Hepp, Christian Wiktor, Martin R. Lohe, Xinliang Feng, Benjamin Butz, Max C. Lemme

Abstract: Electrochemically exfoliated graphene (e-G) thin films on Nafion$^{(R)}$ membranes exhibit a selective barrier effect against undesirable fuel crossover. The approach combines the high proton conductivity of state-of-the-art Nafion$^{(R)}$ and the ability of e-G layers to effectively block the transport of methanol and hydrogen. Nafion$^{(R)}$ membranes are coated with aqueous dispersions of e-G o… ▽ More Electrochemically exfoliated graphene (e-G) thin films on Nafion$^{(R)}$ membranes exhibit a selective barrier effect against undesirable fuel crossover. The approach combines the high proton conductivity of state-of-the-art Nafion$^{(R)}$ and the ability of e-G layers to effectively block the transport of methanol and hydrogen. Nafion$^{(R)}$ membranes are coated with aqueous dispersions of e-G on the anode side, making use of a facile and scalable spray process. Scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS) confirm the formation of a dense percolated graphene flake network which acts as diffusion barrier. The maximum power density in direct methanol fuel cell (DMFC) operation with e-G coated Nafion$^{(R)}$ N115 is 3.9 times higher than the Nafion$^{(R)}$ N115 reference (39 vs. 10 mW cm$^{-2}$ @ 0.3 V) at 5M methanol feed concentration. This suggests the application of e-G coated Nafion$^{(R)}$ membranes for portable DMFCs, where the use of highly concentrated methanol is desirable. △ Less

Submitted 9 April, 2022; originally announced April 2022.

Journal ref: ACS Applied Engineering Materials, 1, 3, 947-954, 2023

Role of substrate surface morphology on the performance of graphene inks for flexible electronics

Authors: Jasper Ruhkopf, Simon Sawallich, Michael Nagel, Martin Otto, Ulrich Plachetka, Tom Kremers, Uwe Schnakenberg, Satender Kataria, Max C. Lemme

Abstract: Two-dimensional (2D) materials, such as graphene, are seen as potential candidates for fabricating electronic devices and circuits on flexible substrates. Inks or dispersions of 2D materials can be deposited on flexible substrates by large-scale coating techniques, such as inkjet printing and spray coating. One of the main issues in coating processes is nonuniform deposition of inks, which may lea… ▽ More Two-dimensional (2D) materials, such as graphene, are seen as potential candidates for fabricating electronic devices and circuits on flexible substrates. Inks or dispersions of 2D materials can be deposited on flexible substrates by large-scale coating techniques, such as inkjet printing and spray coating. One of the main issues in coating processes is nonuniform deposition of inks, which may lead to large variations of properties across the substrates. Here, we investigate the role of surface morphology on the performance of graphene ink deposited on different paper substrates with specific top coatings. Substrates with good wetting properties result in reproducible thin films and electrical properties with low sheet resistance. The correct choice of surface morphology enables high-performance films without postdeposition annealing or treatment. Scanning terahertz time-domain spectroscopy (THz-TDS) is introduced to evaluate both the uniformity and the local conductivity of graphene inks on paper. A paper-based strain gauge is demonstrated and a variable resistor acts as an on-off switch for operating an LED. Customized surfaces can thus help in unleashing the full potential of ink-based 2D materials. △ Less

Submitted 9 April, 2022; originally announced April 2022.

Journal ref: ACS Applied Electronic Materials, 1(9), 1909-1916, 2019

How to Report and Benchmark Emerging Field-Effect Transistors

Authors: Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter

Abstract: Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc… ▽ More Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully. △ Less

Submitted 4 August, 2022; v1 submitted 30 March, 2022; originally announced March 2022.

Comments: 15 pages, 3 figures

Journal ref: Nature Electronics 5 (2022) 416-423

Zero Bias Power Detector Circuits based on MoS$_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates

Authors: Eros Reato, Paula Palacios, Burkay Uzlu, Mohamed Saeed, Annika Grundmann, Zhenyu Wang, Daniel S. Schneider, Zhenxing Wang, Michael Heuken, Holger Kalisch, Andrei Vescan, Alexandra Radenovic, Andras Kis, Daniel Neumaier, Renato Negra, Max C. Lemme

Abstract: We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μみゅー$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing dif… ▽ More We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μみゅー$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS$_2$, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dBでしべる outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes. △ Less

Submitted 9 April, 2022; v1 submitted 9 February, 2022; originally announced February 2022.

Comments: 28 pages

Journal ref: Advanced Materials, 202108469, 2022

Stacking polymorphism in PtSe$_2$ drastically affects its electromechanical properties

Authors: Roman Kempt, Sebastian Lukas, Oliver Hartwig, Maximilian Prechtl, Agnieszka Kuc, Thomas Brumme, Sha Li, Daniel Neumaier, Max C. Lemme, Georg Duesberg, Thomas Heine

Abstract: PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these… ▽ More PtSe$_2$ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. We show that stacking phases other than the AA-stacking in the 1T phase become thermodynamically available at elevated temperatures. We show that these can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize these stacking phases. Lastly, we estimate their gauge factors, which vary strongly and significantly impact the performance of a nanoelectromechanical device. △ Less

Submitted 4 January, 2022; v1 submitted 15 December, 2021; originally announced December 2021.

Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Authors: Shayan Parhizkar, Maximilian Prechtl, Anna Lena Giesecke, Stephan Suckow, Sophia Wahl, Sebastian Lukas, Oliver Hartwig, Nour Negm, Arne Quellmalz, Kristinn B. Gylfason, Daniel Schall, Matthias Wuttig, Georg S. Duesberg, Max C. Lemme

Abstract: Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $μみゅー$m. Multilayered platinum diselenide (PtSe$_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe$_2$ based PDs directly by conformal growth on Si waveguides. The PD… ▽ More Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $μみゅー$m. Multilayered platinum diselenide (PtSe$_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe$_2$ based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 $μみゅー$s. Fourier transform infrared spectroscopy (FTIR) in the wavelength range from 1.25 $μみゅー$m to 28 $μみゅー$m indicates the suitability of PtSe$_2$ for PDs far into the infrared wavelength range. Our PtSe$_2$ PDs integrated by direct growth outperform PtSe$_2$ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility, make PtSe$_2$ an attractive 2D material for optoelectronics and PICs. △ Less

Submitted 21 March, 2022; v1 submitted 17 October, 2021; originally announced October 2021.

Comments: 23 pages, 4 figures

Journal ref: ACS Photonics, 9, 859-867, 2022

2D Materials for Future Heterogeneous Electronics

Authors: Max C. Lemme, Deji Akinwande, Cedric Huyghebaert, Christoph Stampfer

Abstract: Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled products? We try… ▽ More Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled products? We try to answer this by summarizing the main challenges and opportunities that have thus far prevented 2DM applications. △ Less

Submitted 21 March, 2022; v1 submitted 15 October, 2021; originally announced October 2021.

Comments: 14 pages, 1 figure

Journal ref: Nature Communications, 13, 1392, 2022

Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes

Authors: Andreas Hemmetter, Xinxin Yang, Zhenxing Wang, Martin Otto, Burkay Uzlu, Marcel Andree, Ullrich Pfeiffer, Andrei Vorobiev, Jan Stake, Max C. Lemme, Daniel Neumaier

Abstract: Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a… ▽ More Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a scalable process by photolithography using graphene grown by chemical vapor deposition. A one-dimensional junction area reduces the junction capacitance and enables operation in the D-band (110 - 170 GHz). The rectenna on polyimide shows a maximum voltage responsivity of 80 V/W at 167 GHz in free space measurements and minimum noise equivalent power of 80 pW/$\sqrt{\text{Hz}}$. △ Less

Submitted 22 June, 2021; originally announced June 2021.

Comments: 20 pages, 4 figures, 1 table

Journal ref: ACS Applied Electronic Materials 3, 9, 3747-3753, 2021

Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning

Authors: Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov, Zhenxing Wang, Martin Otto, Lado Filipovic, Michael Waltl, Daniel Neumaier, Max C. Lemme, Tibor Grasser

Abstract: Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped char… ▽ More Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped charges are particularly relevant in field effect transistors (FETs) and can lead to a large hysteresis, which endangers stable circuit operation. Based on the notion that charge trapping is highly sensitive to the energetic alignment of the channel Fermi-level with the defect band in the insulator, we propose to optimize device stability by deliberately tuning the channel Fermi-level. Our approach aims to minimize the amount of electrically active border traps without modifying the total number of traps in the insulator. We demonstrate the applicability of this idea by using two differently doped graphene layers in otherwise identical FETs with Al$_2$O$_3$ as a gate oxide mounted on a flexible substrate. Our results clearly show that by increasing the distance of the Fermi-level to the defect band, the hysteresis is significantly reduced. Furthermore, since long-term reliability is also very sensitive to trapped charges, a corresponding improvement in reliability is both expected theoretically and demonstrated experimentally. Our study paves the way for the construction of more stable and reliable 2D FETs in which the channel material is carefully chosen and tuned to maximize the energetic distance between charge carriers in the channel and the defect bands in the insulator employed. △ Less

Submitted 26 April, 2021; v1 submitted 16 April, 2021; originally announced April 2021.

Comments: 28 pages, 6 figures

Material-Dependencies of the THz Emission from Plasmonic Graphene-Based Photoconductive Antenna Structures

Authors: Christoph Suessmeier, Sergi Abadal, Daniel Stock, Stephan Schaeffer, Eduard Alarcón, Seyed Ehsan Hosseininejad, Anna Katharina Wigger, Stefan Wagner, Albert Cabellos-Aparicio, Max C. Lemme, Peter Haring Bolívar

Abstract: Graphene supports surface plasmon polaritons with comparatively slow propagation velocities in the THz region, which becomes increasingly interesting for future communication technologies. This ability can be used to realize compact antennas, which are up to two orders of magnitude smaller than their metallic counterparts. For a proper functionality of these antennas some minimum material requirem… ▽ More Graphene supports surface plasmon polaritons with comparatively slow propagation velocities in the THz region, which becomes increasingly interesting for future communication technologies. This ability can be used to realize compact antennas, which are up to two orders of magnitude smaller than their metallic counterparts. For a proper functionality of these antennas some minimum material requirements have to be fulfilled, which are presently difficult to achieve, since the fabrication and transfer technologies for graphene are still evolving. In this work we analyze available graphene materials experimentally and extract intrinsic characteristics at THz frequencies, in order to predict the dependency of the THz signal emission threshold as a function of the graphene relaxation time tau_r and the chemical potential mu_c. △ Less

Submitted 12 April, 2021; originally announced April 2021.

Comments: 2 pages, 1 table

Journal ref: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Correlating Nanocrystalline Structure with Electronic Properties in 2D Platinum Diselenide

Authors: Sebastian Lukas, Oliver Hartwig, Maximilian Prechtl, Giovanna Capraro, Jens Bolten, Alexander Meledin, Joachim Mayer, Daniel Neumaier, Satender Kataria, Georg S. Duesberg, Max C. Lemme

Abstract: Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermal… ▽ More Platinum diselenide (PtSe${_2}$) is a two-dimensional (2D) material with outstanding electronic and piezoresistive properties. The material can be grown at low temperatures in a scalable manner which makes it extremely appealing for many potential electronics, photonics, and sensing applications. Here, we investigate the nanocrystalline structure of different PtSe${_2}$ thin films grown by thermally assisted conversion (TAC) and correlate them with their electronic and piezoresistive properties. We use scanning transmission electron microscopy for structural analysis, X-ray photoelectron spectroscopy (XPS) for chemical analysis, and Raman spectroscopy for phase identification. Electronic devices are fabricated using transferred PtSe${_2}$ films for electrical characterization and piezoresistive gauge factor measurements. The variations of crystallite size and their orientations are found to have a strong correlation with the electronic and piezoresistive properties of the films, especially the sheet resistivity and the effective charge carrier mobility. Our findings may pave the way for tuning and optimizing the properties of TAC-grown PtSe${_2}$ towards numerous applications. △ Less

Submitted 8 April, 2021; originally announced April 2021.

Journal ref: Advanced Functional Material, 2102929, 2021

Chemical vapor deposited graphene: From synthesis to applications

Authors: Satender Kataria, Stefan Wagner, Jasper Ruhkopf, Aamit Gahoi, Himadri Pandey, Rainer Bornemann, Sam Vaziri, Anderson D. Smith, Mikael Östling, Max C. Lemme

Abstract: Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD… ▽ More Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process. △ Less

Submitted 27 March, 2021; originally announced March 2021.

Journal ref: physica status solidi (a), 211 (11), 2439-2449, 2014

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics

Authors: Zhenxing Wang, Andreas Hemmetter, Burkay Uzlu, Mohamed Saeed, Ahmed Hamed, Satender Kataria, Renato Negra, Daniel Neumaier, Max C. Lemme

Abstract: Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insulator-graphene (MIG) diodes over conventional metal-insulator-metal diodes are discussed with respect to relevant figures-of-merit. The MIG concept is… ▽ More Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insulator-graphene (MIG) diodes over conventional metal-insulator-metal diodes are discussed with respect to relevant figures-of-merit. The MIG concept is extended to 1D diodes. Several experimentally implemented radio frequency circuit applications with MIG diodes as active elements are presented. Furthermore, graphene-silicon Schottky diodes as well as MIG diodes are reviewed in terms of their potential for photodetection. Here, graphene-based diodes have the potential to outperform conventional photodetectors in several key figures-of-merit, such as overall responsivity or dark current levels. Obviously, advantages in some areas may come at the cost of disadvantages in others, so that 2D/3D diodes need to be tailored in application-specific ways. △ Less

Submitted 27 March, 2021; originally announced March 2021.

Journal ref: Advanced Electronic Materials, 2001210, 2021

Graphene-based Wireless Agile Interconnects for Massive Heterogeneous Multi-chip Processors

Authors: Sergi Abadal, Robert Guirado, Hamidreza Taghvaee, Akshay Jain, Elana Pereira de Santana, Peter Haring Bolívar, Mohamed Saeed, Renato Negra, Zhenxing Wang, Kun-Ta Wang, Max C. Lemme, Joshua Klein, Marina Zapater, Alexandre Levisse, David Atienza, Davide Rossi, Francesco Conti, Martino Dazzi, Geethan Karunaratne, Irem Boybat, Abu Sebastian

Abstract: The main design principles in computer architecture have recently shifted from a monolithic scaling-driven approach to the development of heterogeneous architectures that tightly co-integrate multiple specialized processor and memory chiplets. In such data-hungry multi-chip architectures, current Networks-in-Package (NiPs) may not be enough to cater to their heterogeneous and fast-changing communi… ▽ More The main design principles in computer architecture have recently shifted from a monolithic scaling-driven approach to the development of heterogeneous architectures that tightly co-integrate multiple specialized processor and memory chiplets. In such data-hungry multi-chip architectures, current Networks-in-Package (NiPs) may not be enough to cater to their heterogeneous and fast-changing communication demands. This position paper makes the case for wireless in-package nanonetworking as the enabler of efficient and versatile wired-wireless interconnect fabrics for massive heterogeneous processors. To that end, the use of graphene-based antennas and transceivers with unique frequency-beam reconfigurability in the terahertz band is proposed. The feasibility of such a nanonetworking vision and the main research challenges towards its realization are analyzed from the technological, communications, and computer architecture perspectives. △ Less

Submitted 21 September, 2023; v1 submitted 8 November, 2020; originally announced November 2020.

Comments: 8 pages, 4 figures, 1 table

Journal ref: IEEE Wireless Communications Magazine, vol. 30, no. 4, pp. 162-169, 2023

Dependable contact related parameter extraction in graphene-metal junctions

Authors: Amit Gahoi, Satender Kataria, Francesco Driussi, Stefano Venica, Himadri Pandey, David Esseni, Luca Selmi, Max C. Lemme

Abstract: The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R$_{C}$) are still open issues in graphene technology. Here, we demonstrate the importance of following clear protocols when extracting R$_{C}$ using the transfer length method (TLM). We use the example of back-gated graphene TLM structures with nickel contacts, a complementary metal oxide semico… ▽ More The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R$_{C}$) are still open issues in graphene technology. Here, we demonstrate the importance of following clear protocols when extracting R$_{C}$ using the transfer length method (TLM). We use the example of back-gated graphene TLM structures with nickel contacts, a complementary metal oxide semiconductor compatible metal. The accurate extraction of R$_{C}$ is significantly affected by generally observable Dirac voltage shifts with increasing channel lengths in ambient conditions. R$_{C}$ is generally a function of the carrier density in graphene. Hence, the position of the Fermi level and the gate voltage impact the extraction of R$_{C}$. Measurements in high vacuum, on the other hand, result in dependable extraction of R$_{C}$ as a function of gate voltage owing to minimal spread in Dirac voltages. We further assess the accurate measurement and extraction of important parameters like contact-end resistance, transfer length, sheet resistance of graphene under the metal contact and specific contact resistivity as a function of the back-gate voltage. The presented methodology has also been applied to devices with gold and copper contacts, with similar conclusions. △ Less

Submitted 7 August, 2020; originally announced August 2020.

Comments: 23 pages

Journal ref: Advanced Electronic Materials 6 (10), 2000386, 2020

Nanoelectromechanical Sensors based on Suspended 2D Materials

Authors: Max C. Lemme, Stefan Wagner, Kangho Lee, Xuge Fan, Gerard J. Verbiest, Sebastian Wittmann, Sebastian Lukas, Robin J. Dolleman, Frank Niklaus, Herre S. J. van der Zant, Georg S. Duesberg, Peter G. Steeneken

Abstract: The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different… ▽ More The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing. △ Less

Submitted 23 July, 2020; originally announced July 2020.

Comments: Review paper

Journal ref: Research, vol. 2020, Article ID 8748602

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

Authors: D. De Fazio, B. Uzlu, I. Torre, C. Monasterio, S. Gupta, T. Khodkov, Y. Bi, Z. Wang, M. Otto, M. C. Lemme, S. Goossens, D. Neumaier, F. H. L. Koppens

Abstract: Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout… ▽ More Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout requires dark currents of hundreds of $μみゅー$A up to mA, leading to high power consumption needed for the device operation. Here we propose a novel approach for highly responsive graphene-based photodetectors with orders of magnitude lower dark current levels. A shift of the graphene chemical potential caused by light absorption in a layer of colloidal quantum dots, induces a variation of the current flowing across a metal-insulator-graphene diode structure. Owing to the low density of states of graphene near the neutrality point, the light-induced shift in chemical potential can be relatively large, dramatically changing the amount of current flowing across the insulating barrier, and giving rise to a novel type of gain mechanism. This readout requires dark currents of hundreds of nA up to few $μみゅー$A, orders of magnitude lower than other graphene-based photodetectors, while keeping responsivities of $\sim$70A/W in the infrared, almost two orders of magnitude higher compared to established germanium on silicon and indium gallium arsenide infrared photodetectors. This makes the device appealing for applications where high responsivity and low power consumption are required. △ Less

Submitted 21 May, 2020; originally announced May 2020.

Comments: 14 pages, 7 figures

Journal ref: ACS Nano 14 11897 (2020)

Suspended graphene membranes with attached silicon proof masses as piezoresistive NEMS accelerometers

Authors: Xuge Fan, Fredrik Forsberg, Anderson D. Smith, Stephan Schröder, Stefan Wagner, Mikael Östling, Max C. Lemme, Frank Niklaus

Abstract: Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitati… ▽ More Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitations regarding mechanical robustness, manufacturing yield and the maximum measurement current that can be applied across the ribbons. Here, we report on suspended graphene membranes that are fully-clamped at their circumference and that have attached silicon proof masses. We demonstrate their utility as piezoresistive NEMS accelerometers and they are found to be more robust, have longer life span and higher manufacturing yield, can withstand higher measurement currents and are able to suspend larger silicon proof masses, as compared to the previously graphene ribbon devices. These findings are an important step towards bringing ultra-miniaturized piezoresistive graphene NEMS closer towards deployment in emerging applications such as in wearable electronics, biomedical implants and internet of things (IoT) devices. △ Less

Submitted 16 March, 2020; originally announced March 2020.

Comments: 40 pages, 5 figures. arXiv admin note: text overlap with arXiv:2003.07115

Journal ref: Nano Lett.19 10 (2019) 6788-6799

Manufacture and Characterization of Graphene Membranes with Suspended Silicon Proof Masses for MEMS and NEMS Applications

Authors: Xuge Fan, Anderson D. Smith, Fredrik Forsberg, Stefan Wagner, Stephan Schröder, Sayedeh Shirin Afyouni Akbari, Andreas C. Fischer, Luis Guillermo Villanueva, Mikael Östling, Max C. Lemme, Frank Niklaus

Abstract: Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological… ▽ More Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 micro meter to 110 micro meter and suspended proof masses consisting of solid silicon cubes that are from 5 micro meter multiply 5 micro meter multiply 16.4 micro meter to 100 micro meter multiply 100 micro meter multiply 16.4 micro meter in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were greater than 90%, with more than 70% of the graphene membranes having more than 90% graphene area without visible defects. The graphene membranes with suspended proof masses were extremely robust and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to ~7000 nN. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances. △ Less

Submitted 16 March, 2020; originally announced March 2020.

Comments: 39 pages, 15 figures

Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers

Authors: Xuge Fan, Fredrik Forsberg, Anderson D. Smith, Stephan Schröder, Stefan Wagner, Henrik Rödjegård, Andreas C. Fischer, Mikael Östling, Max C. Lemme, Frank Niklaus

Abstract: Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next generation mobile, wearable, and implantable devices. However, these NEMS devices require transducers that are ultra-small, sensitive and can be fabricated at low cost. Here, we show that suspended double-layer graphene ribbons with attached silicon proof masses can be used as combined spring-mass… ▽ More Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next generation mobile, wearable, and implantable devices. However, these NEMS devices require transducers that are ultra-small, sensitive and can be fabricated at low cost. Here, we show that suspended double-layer graphene ribbons with attached silicon proof masses can be used as combined spring-mass and piezoresistive transducers. The transducers, which are realized using processes that are compatible with large-scale semiconductor manufacturing technologies, can yield NEMS accelerometers that occupy at least two orders of magnitude smaller die area than conventional state-of-the-art silicon accelerometers. △ Less

Submitted 16 March, 2020; originally announced March 2020.

Comments: 42 pages, 4 figures

Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes

Authors: Sarah Riazimehr, Melkamu Belete, Satender Kataria, Olof Engström, Max Christian Lemme

Abstract: Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage data of G/Si Schottky diodes connected in parallel wi… ▽ More Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also demonstrate the accurate extraction of the built-in potential ($Φふぁい$$_{bi}$) and the Schottky barrier height from the measurement data independent of the Richardson constant. △ Less

Submitted 25 February, 2020; originally announced February 2020.