-
Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator
Authors:
W. X. Zhou,
H. J. Wu,
J. Zhou,
S. W. Zeng,
C. J. Li,
M. S. Li,
R. Guo,
J. X. Xiao,
Z. Huang,
W. M. Lv,
K. Han,
P. Yang,
C. G. Li,
Z. S. Lim,
H. Wang,
Y. Zhang,
S. J. Chua,
K. Y. Zeng,
T. Venkatesan,
J. S. Chen,
Y. P. Feng,
S. J. Pennycook,
A. Ariando
Abstract:
Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$T…
▽ More
Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.
△ Less
Submitted 11 July, 2020;
originally announced July 2020.
-
Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures
Authors:
Zuhuang Chen,
Zhanghui Chen,
Z. Q. Liu,
M. E. Holtz,
C. J. Li,
X. Renshaw Wang,
W. M. Lv,
M. Motapothula,
L. S. Fan,
J. A. Turcaud,
L. R. Dedon,
C. Frederick,
R. J. Xu,
R. Gao,
A. T. NDiaye,
E. Arenholz,
J. A. Mundy,
T. Venkatesan,
D. A. Muller,
L. -W. Wang,
J. Liu,
L. W. Martin
Abstract:
Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific X-ray absorption spectroscopy an…
▽ More
Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO3/SrTiO3 (001) heterostructures. Using a combination of element-specific X-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO3. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron over-accumulation. In turn, by controlling the doping of the LaMnO3, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO3 films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.
△ Less
Submitted 6 September, 2017;
originally announced September 2017.
-
Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate
Authors:
S. W. Zeng,
Z. Huang,
W. M. Lv,
N. N. Bao,
K. Gopinadhan,
L. K. Jian,
T. S. Herng,
Z. Q. Liu,
Y. L. Zhao,
C. J. Li,
H. J. Harsan Ma,
P. Yang,
J. Ding,
T. Venkatesan,
Ariando
Abstract:
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by ele…
▽ More
We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.
△ Less
Submitted 7 July, 2015;
originally announced July 2015.
