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The Physical Meaning of Time-Delayed Collection Field Transients from Disordered Devices
Authors:
Markus Hußner,
Carsten Deibel,
Roderick Charles Ian MacKenzie
Abstract:
Charge carrier mobility and recombination determine the performance of many opto-electronic devices such as solar cells, sensors and light-emitting diodes. Understanding how these parameters change as a function of material choice, charge carrier density and device geometry is essential for developing the next generation of devices. The Time-Delayed-Collection-Field technique (TDCF) is becoming a…
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Charge carrier mobility and recombination determine the performance of many opto-electronic devices such as solar cells, sensors and light-emitting diodes. Understanding how these parameters change as a function of material choice, charge carrier density and device geometry is essential for developing the next generation of devices. The Time-Delayed-Collection-Field technique (TDCF) is becoming a widely used method to measure both recombination and carrier transport with values derived from this method being widely reported for many material systems. However, most novel materials are highly disordered with a high density of trap states and standard TDCF-theory neglects the influence of these states. In this work we examine how reliable TDCF can be as a measurement technique when the device contains significant energetic disorder. We identify regimes where the results can be relied upon and where the results should be taken with more caution. Finally, we provide simple and easy to use experimental tests to help the experimentalist decide if the physical processes are dominated by trap states.
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Submitted 13 October, 2023;
originally announced October 2023.
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Machine learning for ultra high throughput screening of organic solar cells: Solving the needle in the hay stack problem
Authors:
Markus Hußner,
Pacalaj A. Richard,
Olaf G. Müller-Dieckert,
Chao Liu,
Zhisheng Zhou,
Nahdia Majeed,
Steve Greedy,
Ivan Ramirez,
Ning Li,
Seyed Mehrdad Hosseini,
Christian Uhrich,
Christoph J. Brabec,
James R. Durrant,
Carsten Deibel,
Roderick C. I. MacKenzie
Abstract:
Over the last two decades the organic solar cell community has synthesised tens of thousands of novel polymers and small molecules in the search for an optimum light harvesting material. These materials were often crudely evaluated simply by measuring the current voltage curves in the light to obtain power conversion efficiencies (PCEs). Materials with low PCEs were quickly disregarded in the sear…
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Over the last two decades the organic solar cell community has synthesised tens of thousands of novel polymers and small molecules in the search for an optimum light harvesting material. These materials were often crudely evaluated simply by measuring the current voltage curves in the light to obtain power conversion efficiencies (PCEs). Materials with low PCEs were quickly disregarded in the search for higher efficiencies. More complex measurements such as frequency/time domain characterisation that could explain why the material performed as it did were often not performed as they were too time consuming/complex. This limited feedback forced the field to advance using a more or less random walk of material development and has significantly slowed progress. Herein, we present a simple technique based on machine learning that can quickly and accurately extract recombination time constants and charge carrier mobilities as a function of light intensity simply from light/dark JV curves alone. This technique reduces the time to fully analyse a working cell from weeks to seconds and opens up the possibility of not only fully characterising new devices as they are fabricated, but also data mining historical data sets for promising materials the community has over looked.
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Submitted 7 September, 2023;
originally announced September 2023.
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Preconditioning for a Phase-Field Model with Application to Morphology Evolution in Organic Semiconductors
Authors:
Kai Bergermann,
Carsten Deibel,
Roland Herzog,
Roderick C. I. MacKenzie,
Jan-Frederik Pietschmann,
Martin Stoll
Abstract:
The Cahn--Hilliard equations are a versatile model for describing the evolution of complex morphologies. In this paper we present a computational pipeline for the numerical solution of a ternary phase-field model for describing the nanomorphology of donor--acceptor semiconductor blends used in organic photovoltaic devices. The model consists of two coupled fourth-order partial differential equatio…
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The Cahn--Hilliard equations are a versatile model for describing the evolution of complex morphologies. In this paper we present a computational pipeline for the numerical solution of a ternary phase-field model for describing the nanomorphology of donor--acceptor semiconductor blends used in organic photovoltaic devices. The model consists of two coupled fourth-order partial differential equations that are discretized using a finite element approach. In order to solve the resulting large-scale linear systems efficiently, we propose a preconditioning strategy that is based on efficient approximations of the Schur-complement of a saddle point system. We show that this approach performs robustly with respect to variations in the discretization parameters. Finally, we outline that the computed morphologies can be used for the computation of charge generation, recombination, and transport in organic solar cells.
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Submitted 16 September, 2022; v1 submitted 7 April, 2022;
originally announced April 2022.
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Traps and transport resistance: the next frontier for stable state-of-the-art non-fullerene acceptor solar cells
Authors:
Christopher Wöpke,
Clemens Göhler,
Maria Saladina,
Xiaoyan Du,
Li Nian,
Christopher Greve,
Chenhui Zhu,
Kaila M. Yallum,
Yvonne J. Hofstetter,
David Becker-Koch,
Ning Li,
Thomas Heumüller,
Ilya Milekhin,
Dietrich R. T. Zahn,
Christoph J. Brabec,
Natalie Banerji,
Yana Vaynzof,
Eva M. Herzig,
Roderick C. I. MacKenzie,
Carsten Deibel
Abstract:
Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduct…
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Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits open-circuit voltage and lowers charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.
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Submitted 22 March, 2022;
originally announced March 2022.
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Analytical Description of Mixed Ohmic and Space-Charge-Limited Conduction in Single-Carrier Devices
Authors:
Jason A. Röhr,
Roderick C. I. MacKenzie
Abstract:
While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with this method. By combining the theories describing ohmic and space-charge-limited conduction, we derive a general analytical approach to extract the charge-carrier…
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While space-charge-limited current measurements are often used to characterize charge-transport in relatively intrinsic, low-mobility semiconductors, it is currently difficult to characterize lightly or heavily doped semiconductors with this method. By combining the theories describing ohmic and space-charge-limited conduction, we derive a general analytical approach to extract the charge-carrier density, the conduction-band edge and the drift components of the current density-voltage curves of a single-carrier device when the semiconductor is either undoped, lightly doped or heavily doped. The presented model covers the entire voltage range, i.e., both the low-voltage regime and the Mott-Gurney regime. We demonstrate that there is an upper limit to how doped a device must be before the current density-voltage curves are significantly affected, and we show that the background charge-carrier density must be considered to accurately model the drift component in the low-voltage regime, regardless of whether the device is doped or not. We expect that the final analytical expressions presented herein to be directly useful to experimentalists studying charge transport in novel materials and devices.
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Submitted 9 October, 2020; v1 submitted 28 April, 2020;
originally announced April 2020.
