Showing 1–6 of 6 results for author: Macaluso, R T

Solar energy conversion properties and defect physics of ZnSiP$_2$

Authors: Aaron D. Martinez, Emily L. Warren, Prashun Gorai, Kasper A. Borup, Darius Kuciauskas, Patricia C. Dippo, Brenden R. Ortiz, Robin T. Macaluso, Sau D. Nguyen, Ann L. Greenaway, Shannon W. Boettcher, Andrew G. Norman, Vladan Stevanović, Eric S. Toberer, Adele C. Tamboli

Abstract: Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with… ▽ More Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP$_2$ photovoltaic device. We show that ZnSiP$_2$ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP$_2$ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP$_2$ and related materials as photovoltaic absorber materials. △ Less

Submitted 29 December, 2015; v1 submitted 17 June, 2015; originally announced June 2015.

Comments: As accepted by EES on December 11th, 2015

Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite

Authors: S. Guo, D. P. Young, R. T. Macaluso, D. A. Browne, N. L. Henderson, J. Y. Chan, L. L. Henry, J. F. DiTusa

Abstract: The Hall effect and resistivity of the carrier doped magnetic semiconductor Fe$_{1-x}$Co$_x$S$_2$ were measured for $0\le x \le 0.16$, temperatures between 0.05 and 300 K, and fields of up to 9 T. Our Hall data indicate electron charge carriers with a density of only 10 to 30% of the Co density of our crystals. Despite the previous identification of magnetic Griffiths phase formation in the magn… ▽ More The Hall effect and resistivity of the carrier doped magnetic semiconductor Fe$_{1-x}$Co$_x$S$_2$ were measured for $0\le x \le 0.16$, temperatures between 0.05 and 300 K, and fields of up to 9 T. Our Hall data indicate electron charge carriers with a density of only 10 to 30% of the Co density of our crystals. Despite the previous identification of magnetic Griffiths phase formation in the magnetic and thermodynamic properties of this system for the same range of $x$, we measure a temperature independent resistivity below 0.5 K indicating Fermi liquid-like transport. We also observe no indication of quantum corrections to the conductivity despite the small values of the product of the Fermi wave vector and the mean-free-path, $1.5 \le k_F\ell \le 15$, over the range of $x$ investigated. This implies a large inelastic scattering rate such that the necessary condition for the observation of quantum contributions to the carrier transport, quantum coherence over times much longer than the elastic scattering time, is not met in our samples. Above 0.5 K we observe a temperature and magnetic field dependent resistivity that closely resembles a Kondo anomaly for $x$ less than that required to form a long range magnetic state, $x_c$. For $x>x_c$, the resistivity and magnetoresistance resemble that of a spin glass with a reduction of the resistivity by as much as 35% in 5 T fields. We also observe an enhancement of the residual resistivity ratio by almost a factor of 2 for samples with $x\sim x_c$ indicating temperature dependent scattering mechanisms beyond simple carrier-phonon scattering. We speculate that this enhancement is due to charge carrier scattering from magnetic fluctuations which contribute to the resistivity over a wide temperature range. △ Less

Submitted 15 December, 2009; originally announced December 2009.

Comments: 13 pages including 14 figures

Magnetic and thermodynamic properties of cobalt doped iron pyrite: Griffiths Phase in a magnetic semiconductor

Authors: S. Guo, D. P. Young, R. T. Macaluso, D. A. Browne, N. L. Henderson, J. Y. Chan, L. L. Henry, J. F. DiTusa

Abstract: Doping of the band insulator FeS$_2$ with Co on the Fe site introduces a small density of itinerant carriers and magnetic moments. The lattice constant, AC and DC magnetic susceptibility, magnetization, and specific heat have been measured over the $0\le x\le 0.085$ range of Co concentration. The variation of the AC susceptibility with hydrostatic pressure has also been measured in a small numbe… ▽ More Doping of the band insulator FeS$_2$ with Co on the Fe site introduces a small density of itinerant carriers and magnetic moments. The lattice constant, AC and DC magnetic susceptibility, magnetization, and specific heat have been measured over the $0\le x\le 0.085$ range of Co concentration. The variation of the AC susceptibility with hydrostatic pressure has also been measured in a small number of our samples. All of these quantities show systematic variation with $x$ including a paramagnetic to disordered ferromagnetic transition at $x=0.007\pm 0.002$. A detailed analysis of the changes with temperature and magnetic field reveal small power law dependencies at low temperatures for samples near the critical concentration for magnetism, and just above the Curie temperature at higher $x$. In addition, the magnetic susceptibility and specific heat are non-analytic around H=0 displaying an extraordinarily sharp field dependence in this same temperature range. We interpret this behavior as due to the formation of Griffiths phases that result from the quenched disorder inherent in a doped semiconductor. △ Less

Submitted 15 December, 2009; originally announced December 2009.

Comments: 22 pages including 27 figures

Spin Glass Order Induced by Dynamic Frustration

Authors: E. A. Goremychkin, R. Osborn, B. D. Rainford, R. T. Macaluso, D. T. Adroja, M. Koza

Abstract: Spin glasses are systems whose magnetic moments freeze at low temperature into random orientations without long-range order. It is generally accepted that both frustration and disorder are essential ingredients in all spin glasses, so it was surprising that PrAu2Si2, a stoichiometric compound with a well-ordered crystal structure, was reported to exhibit spin glass freezing. In this article, we… ▽ More Spin glasses are systems whose magnetic moments freeze at low temperature into random orientations without long-range order. It is generally accepted that both frustration and disorder are essential ingredients in all spin glasses, so it was surprising that PrAu2Si2, a stoichiometric compound with a well-ordered crystal structure, was reported to exhibit spin glass freezing. In this article, we report on inelastic neutron scattering measurements of the crystal field excitations, which show that PrAu2Si2 has a singlet ground state and that the exchange coupling is very close to the critical value to induce magnetic order. We propose that spin glass freezing results from dynamic fluctuations of the crystal field levels that destabilize the induced moments and frustrate the development of long-range magnetic correlations. This novel mechanism for producing a frustrated ground state could provide a method of testing the concept of `avoided criticality' in glassy systems. △ Less

Submitted 24 June, 2008; originally announced June 2008.

Comments: 5 pages, 5 figures

Discovery of Griffiths phase in itinerant magnetic semiconductor Fe_{1-x}Co_xS_2

Authors: S. Guo, D. P. Young, R. T. Macaluso, D. A. Browne, N. L. Henderson, J. Y. Chan, L. L. Henry, J. F. DiTusa

Abstract: Critical points that can be suppressed to zero temperature are interesting because quantum fluctuations have been shown to dramatically alter electron gas properties. Here, the metal formed by Co doping the paramagnetic insulator FeS$_2$, Fe$_{1-x}$Co$_x$S$_2$, is demonstrated to order ferromagnetically at $x>x_c=0.01\pm0.005$ where we observe unusual transport, magnetic, and thermodynamic prope… ▽ More Critical points that can be suppressed to zero temperature are interesting because quantum fluctuations have been shown to dramatically alter electron gas properties. Here, the metal formed by Co doping the paramagnetic insulator FeS$_2$, Fe$_{1-x}$Co$_x$S$_2$, is demonstrated to order ferromagnetically at $x>x_c=0.01\pm0.005$ where we observe unusual transport, magnetic, and thermodynamic properties. We show that this magnetic semiconductor undergoes a percolative magnetic transition with distinct similarities to the Griffiths phase, including singular behavior at $x_c$ and zero temperature. △ Less

Submitted 30 October, 2007; originally announced October 2007.

Comments: 10 pages, 4 figures

The Effect of Disorder on a Quantum Phase Transition

Authors: J. F. DiTusa, S. Guo, D. P. Young, R. T. Macaluso, D. A. Browne, N. L. Henderson, J. Y. Chan

Abstract: The conductivity and magnetization of Fe1-xCoxS2 were measured to investigate quantum critical behavior in disordered itinerant magnets. Small x (<0.001) is required to convert insulating iron pyrite into a metal, followed by a paramagnetic-to-ferromagnetic metal transition at x = 0.032+/-0.004. Singular contributions are discovered that are distinct from those at either metal-insulator or magne… ▽ More The conductivity and magnetization of Fe1-xCoxS2 were measured to investigate quantum critical behavior in disordered itinerant magnets. Small x (<0.001) is required to convert insulating iron pyrite into a metal, followed by a paramagnetic-to-ferromagnetic metal transition at x = 0.032+/-0.004. Singular contributions are discovered that are distinct from those at either metal-insulator or magnetic transitions. Our data reveal that disorder and low carrier density associated with proximity to a metal-insulator transition fundamentally modifies the critical behavior of the magnetic transition. △ Less

Submitted 20 June, 2003; originally announced June 2003.

Comments: 14 pages 4 figures