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Let's Resonate! How to Elicit Improvisation and Letting Go in Interactive Digital Art
Authors:
Jean-François Jégo,
Margherita Bergamo Meneghini
Abstract:
Participatory art allows for the spectator to be a participant or a viewer able to engage actively with interactive art. Real-time technologies offer new ways to create participative artworks. We hereby investigate how to engage participation through movement in interactive digital art, and what this engagement can awaken, focusing on the ways to elicit improvisation and letting go. We analyze two…
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Participatory art allows for the spectator to be a participant or a viewer able to engage actively with interactive art. Real-time technologies offer new ways to create participative artworks. We hereby investigate how to engage participation through movement in interactive digital art, and what this engagement can awaken, focusing on the ways to elicit improvisation and letting go. We analyze two Virtual Reality installations, ''InterACTE'' and ''Eve, dance is an unplaceable place,'' involving body movement, dance, creativity and the presence of an observing audience. We evaluate the premises, the setup, and the feedback of the spectators in the two installations. We propose a model following three different perspectives of resonance: 1. Inter Resonance between Spectator and Artwork, which involves curiosity, imitation, playfulness and improvisation. 2. Inner Resonance of Spectator him/herself, where embodiment and creativity contribute to the sense of being present and letting go. 3. Collective Resonance between Spectator/Artwork and Audience, which is stimulated by curiosity, and triggers motor contagion, engagement and gathering. The two analyzed examples seek to awaken open-minded communicative possibilities through the use of interactive digital artworks. Moreover, the need to recognize and develop the idea of resonance becomes increasingly important in this time of urgency to communicate, understand and support collectivity.
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Submitted 22 June, 2023;
originally announced June 2023.
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Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
Authors:
D. Favero,
C. De Santi,
K. Mukherjee,
M. Borga,
K. Geens,
U. Chatterjee,
B. Bakeroot,
S. Decoutere,
F. Rampazzo,
G. Meneghesso,
E. Zanoni,
M. Meneghini
Abstract:
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk doping (6E18 Si/cc, 6E17 Si/c…
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For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk doping (6E18 Si/cc, 6E17 Si/cc and 2.5E18 Mg/cc, p-type), different structures (planar, trench-like) and different geometries (area, perimeter and shape). We demonstrate that (i) capacitors on p-GaN have better breakdown performance; (ii) the presence of a trench structure significantly reduces breakdown capabilities; (iii) breakdown voltage is dependent on area, with a decreasing robustness for increasing dimensions; (iv) breakdown voltage is independent of shape (rectangular, circular). TCAD simulations, in agreement with the measurements, illustrate the electric field distribution near breakdown and clarify the results obtained experimentally.
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Submitted 20 October, 2022; v1 submitted 19 October, 2022;
originally announced October 2022.
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Study and characterization of GaN MOS capacitors: planar versus trench topographies
Authors:
K. Mukherjee,
C. De Santi,
S. You,
K. Geens,
M. Borga,
S. Decoutere,
B. Bakeroot,
P. Diehle,
F. Altmann,
G. Meneghesso,
E. Zanoni,
M. Meneghini
Abstract:
Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of t…
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Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer; (ii) the addition of the trench etch, while improving reproducibility, results in a decrease of breakdown performance compared to the planar structures. (iii) for the trench structures, the voltage for a 10 years lifetime is still above 20 V, indicating a good robustness. (iv) To review the trapping performance across the metal-dielectric-GaN stack, forward-reverse capacitance-voltage measurements with and without stress and photo-assistance are performed. Overall, as-grown planar capacitors devoid of prior etching steps show lowest trapping, while trench capacitors have higher interface trapping, and bulk trapping comparable to the blanket etched capacitors. (v) The nanostructure of the GaN/dielectric interface was characterized by high resolution scanning transmission electron microscopy (HR-STEM). An increased roughness of 2-3 monolayers at the GaN surface was observed after blanket etching, which was correlated to the higher density of interface traps. The results presented in this paper give fundamental insight on how the etch and trench processing affects the trapping and robustness of trench-gate GaN-MOSFETs, and provide guidance for the optimization of device performance.
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Submitted 21 July, 2022; v1 submitted 20 July, 2022;
originally announced July 2022.
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Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes
Authors:
A. Nardo,
C. De Santi,
C. Koller,
C. Ostermaier,
I. Daumiller,
G. Meneghesso,
E. Zanoni,
M. Meneghini
Abstract:
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the trapping and de-trapping processes induced by a large vertical bias and identified different mechanisms, responsible for the storage of negative and positive charge in…
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This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the trapping and de-trapping processes induced by a large vertical bias and identified different mechanisms, responsible for the storage of negative and positive charge in the buffer. (ii) temperature-dependent analysis was carried out to evaluate the time constants associated to negative and positive charge build-up. Remarkably, the results indicate that the activation energy for negative charge trapping is ~0.3 eV, which is much lower than the ionization energy of carbon acceptors (0.8-0.9 eV). This result is explained by considering that trapping and de-trapping are not dominated by thermal processes (thermal emission from acceptors), but by transport mechanisms, that limit the transfer of charge to trap states. (iii) in the recovery experiments, after low stress bias negative charge trapping dominates. After high stress bias, also the effect of positive charge generation is detected, and the related activation energy is evaluated. The results presented within this paper clearly indicate that the trapping and de-trapping kinetics of normally-off GaN HEMTs are the results of the interplay of transport-limited conduction processes, that result in a low thermal activation (Ea~0.3 eV), compared to that of CN acceptors.
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Submitted 20 December, 2021; v1 submitted 17 December, 2021;
originally announced December 2021.
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Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons
Authors:
Z. Gao,
F. Rampazzo,
M. Meneghini,
C. De Santi,
F. Chiocchetta,
D. Marcon,
G. Meneghesso,
E. Zanoni
Abstract:
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the…
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The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed.
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Submitted 21 July, 2021; v1 submitted 18 July, 2021;
originally announced July 2021.
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Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
Authors:
Z. Gao,
M. Meneghini,
F. Rampazzo,
M. Rzin,
C. De Santi,
G. Meneghesso,
E. Zanoni
Abstract:
The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then drain step stress tests at different gate voltages are compared, afterwards, the constant stress at different bias points are discussed. Results show tha…
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The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and pulsed I-V characterization at room temperature are discussed, then drain step stress tests at different gate voltages are compared, afterwards, the constant stress at different bias points are discussed. Results show that the high C HEMTs showed reduced DIBL, smaller leakage current, as well as decreased electric field, leading to an improved robustness during on-state stress testing, with respect to the reference ones. Failure modes during constant voltage stress consists in a decrease of drain current and transconductance, accelerated by temperature and electric field.
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Submitted 21 July, 2021; v1 submitted 18 July, 2021;
originally announced July 2021.
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Short Term Reliability and Robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
Authors:
Zhan Gao,
Matteo Meneghini,
Kathia Harrouche,
Riad Kabouche,
Francesca Chiocchetta,
Daniele Marcon,
Etienne Okada,
Fabiana Rampazzo,
Carlo De Santi,
Farid Medjdoub,
Gaudenzio Meneghesso,
Enrico Zanoni
Abstract:
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied…
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Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may act as preferential paths for electron trapping. Degradation does not depend on dissipated power and is preliminary attributed to hot-electron trapping, enhanced by electric fields.
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Submitted 30 July, 2021; v1 submitted 18 July, 2021;
originally announced July 2021.
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OFF-state trapping phenomena in GaN HEMTs: interplay between gate trapping, acceptor ionization and positive charge redistribution
Authors:
E. Canato,
M. Meneghini,
C. De Santi,
F. Masin,
A. Stockman,
P. Moens,
E. Zanoni,
G. Meneghesso
Abstract:
We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH measurements shown an initial positive VTH variation and an increase in RON then, for drain voltages >100 V, VTH is stable and the RON shows a partial recovery. (ii)…
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We present an extensive analysis of the trapping processes induced by drain bias stress in AlGaN/GaN high-electron-mobility transistors (HEMTs) with p-GaN gate. We demonstrate that: (i) with increasing drain stress, pulsed I-V and VTH measurements shown an initial positive VTH variation and an increase in RON then, for drain voltages >100 V, VTH is stable and the RON shows a partial recovery. (ii) At moderate voltages, VTH instability is related to trapping at the gate stack, due to residual negative charge left behind by the holes that leave the p-GaN layer through the Schottky gate contact and/or to trapping at the barrier. At higher voltages, we demonstrate the interplay of two trapping processes by C-V and pulsed drain current analysis: (iii) a fast storage of positive charge, accumulated near the buffer/SRL interface, not strongly thermally activated, dominating at higher voltages; (iv) a slower negative charge storage, thermally activated with activation energies for trapping and de-trapping equal to ~0.6 eV and ~0.4-0.8 eV, respectively.
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Submitted 14 July, 2021; v1 submitted 13 July, 2021;
originally announced July 2021.
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Vertical GaN Devices: Process and Reliability
Authors:
Shuzhen You,
Karen Geens,
Matteo Borga,
Hu Liang,
Herwig Hahn,
Dirk Fahle,
Michael Heuken,
Kalparupa Mukherjee,
Carlo De Santi,
Matteo Meneghini,
Enrico Zanoni,
Martin Berg,
Peter Ramvall,
Ashutosh Kumar,
Mikael T. Björk,
B. Jonas Ohlsson,
Stefaan Decoutere
Abstract:
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path bas…
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This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density.
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Submitted 7 July, 2021; v1 submitted 6 July, 2021;
originally announced July 2021.
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Exploration of Gate Trench Module for Vertical GaN devices
Authors:
M. Ruzzarin,
K. Geens,
M. Borga,
H. Liang,
S. You,
B. Bakeroot,
S. Decoutere,
C. De Santi,
A. Neviani,
M. Meneghini,
G. Meneghesso,
E. Zanoni
Abstract:
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of the p-GaN layer. The analysis was carried out by comparing the main DC parameters of devices that differ in surface cleaning process of the gate trench, gate d…
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The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of the p-GaN layer. The analysis was carried out by comparing the main DC parameters of devices that differ in surface cleaning process of the gate trench, gate dielectric thickness, and body layer doping. . On the basis of experimental results, we report that: (i) a good cleaning process of the etched GaN surface of the gate trench is a key factor to enhance the device performance, (ii) a gate dielectric >35-nm SiO2 results in a narrow distribution for DC characteristics, (iii) lowering the p-doping in the body layer improves the ON-resistance (RON). Gate capacitance measurements are performed to further confirm the results. Hypotheses on dielectric trapping/detrapping mechanisms under positive and negative gate bias are reported.
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Submitted 6 April, 2021; v1 submitted 2 April, 2021;
originally announced April 2021.
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The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires
Authors:
M. Musolino,
F. Sacconi,
A. Tahraoui,
F. Panetta,
C. De Santi,
M. Meneghini,
E. Zanoni,
L. Geelhaar
Abstract:
In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relative intensity of the two peaks evolves in a peculiar way with injected current. Spatially and spectrally resolved EL maps confirmed the presence of two main transitions in the spectra, and suggested that they are emitted b…
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In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relative intensity of the two peaks evolves in a peculiar way with injected current. Spatially and spectrally resolved EL maps confirmed the presence of two main transitions in the spectra, and suggested that they are emitted by the majority of single nano-LEDs. In order to elucidate the physical origin of this effect, we performed theoretical calculations of the strain, electric field, and charge density distributions both for planar LEDs and NW-LEDs. On this basis, we simulated also the EL spectra of these devices, which exhibit a double peak structure for N-polar heterostructures, both in the NW and the planar case. In contrast, this feature is not observed when Ga-polar planar LEDs are simulated. We found that the physical origin of the double peak structure is a stronger quantum-confined Stark effect occurring in the first and last quantum well of the N-polar heterostructures. The peculiar evolution of the relative peak intensities with injected current, seen only in the case of the NW-LED, is attributed to the three-dimensional strain variation resulting from elastic relaxation at the free sidewalls of the NWs. Therefore, this study provides important insights on the working principle of N-polar LEDs based on both planar and NW heterostructures.
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Submitted 23 March, 2017;
originally announced April 2017.
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A physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires
Authors:
M. Musolino,
D. van Treeck,
A. Tahraoui,
L. Scarparo,
C. De Santi,
M. Meneghini,
E. Zanoni,
L. Geelhaar,
H. Riechert
Abstract:
We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the prese…
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We investigated the origin of the high reverse leakage current in light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. To this end, capacitance deep level transient spectroscopy (DLTS) and temperature-dependent current-voltage (I-V) measurements were performed on a fully processed NW-LED. The DLTS measurements reveal the presence of two distinct electron traps with high concentrations in the depletion region of the p-i-n junction. These band gap states are located at energies of $570\pm20$ and $840\pm30$ meV below the conduction band minimum. The physical origin of these deep level states is discussed. The temperature-dependent I-V characteristics, acquired between 83 and 403 K, show that different conduction mechanisms cause the observed leakage current. On the basis of all these results, we developed a quantitative physical model for charge transport in the reverse bias regime. By taking into account the mutual interaction of variable range hopping and electron emission from Coulombic trap states, with the latter being described by phonon-assisted tunnelling and the Poole-Frenkel effect, we can model the experimental I-V curves in the entire range of temperatures with a consistent set of parameters. Our model should be applicable to planar GaN-based LEDs as well. Furthermore, possible approaches to decrease the leakage current in NW-LEDs are proposed.
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Submitted 11 November, 2015;
originally announced November 2015.
